Дисертації з теми "Gallium nitrate"
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Stern, Lawrence S. "Studies on the effects of gallium nitrate on rat bone /." The Ohio State University, 1993. http://rave.ohiolink.edu/etdc/view?acc_num=osu1487842372894675.
Повний текст джерелаCrawford, Jessica F. "Using room-temperature liquid metals as a new reaction environment." Thesis, Queensland University of Technology, 2022. https://eprints.qut.edu.au/232783/1/Jessica_Crawford_Thesis.pdf.
Повний текст джерелаLi, Ting. "Gallium nitride and aluminum gallium nitride-based ultraviolet photodetectors /." Digital version accessible at:, 2000. http://wwwlib.umi.com/cr/utexas/main.
Повний текст джерелаMuensit, Supasarote. "Piezoelectric coefficients of gallium arsenide, gallium nitride and aluminium nitride." Phd thesis, Australia : Macquarie University, 1999. http://hdl.handle.net/1959.14/36187.
Повний текст джерелаThesis (PhD)--Macquarie University, School of Mathematics, Physics, Computing and Electronics, 1999.
Includes bibliographical references.
Introduction -- A Michelson interferometer for measurement of piezoelectric coefficients -- The piezoelectric coefficient of gallium arsenide -- Extensional piezoelectric coefficients of gallium nitrides and aluminium nitride -- Shear piezoelectric coefficients of gallium nitride and aluminium nitride -- Electrostriction in gallium nitride, aluminium nitride and gallium arsenide -- Summary and prognosis.
The present work represents the first use of the interferometric technique for determining the magnitude and sign of the piezoelectric coefficients of III-V compound semiconductors, in particular gallium arsenide (GaAs), gallium nitride (GaN), and aluminium nitride (AIN). The interferometer arrangement used in the present work was a Michelson interferometer, with the capability of achieving a resolution of 10⁻¹³ m. -- The samples used were of two types. The first were commercial wafers, with single crystal orientation. Both GaAs and GaN were obtained in this form. The second type of sample was polycrystalline thin films, grown in the semiconductor research laboratories at Macquarie University. GaN and AIN samples of this type were obtained. -- The d₁₄ coefficient of GaAs was measured by first measuring the d₃₃ value of a [111] oriented sample. This was then transformed to give the d₁₄ coefficient of the usual [001] oriented crystal. The value obtained for d₁₄ was (-2.7 ± 0.1) pmV⁻¹. This compares well with the most recent reported measurements of -2.69 pmV⁻¹. The significance of the measurement is that this represents the first time this coefficient has been measured using the inverse piezoelectric effect. -- For AIN and GaN samples, the present work also represents the first time their piezoelectric coefficients have been measured by interferometry. For GaN, this work presents the first reported measurements of the piezoelectric coefficients, and some of these results have recently been published by the (Muensit and Guy, 1998). The d₃₃ and d₃₁ coefficients for GaN were found to be (3.4 ± 0.1) pmV⁻¹ and (-1.7 ± 0.1) pmV⁻¹ respectively. Since these values were measured on a single crystal wafer and have been corrected for substrate clamping, the values should be a good measure of the true piezoelectric coefficients for bulk GaN. -- For AIN, the d₃₃ and d₃₁ coefficients were found to be (5.1 ± 0.2) pmV⁻¹, and (-2.6 ± 0.1) pmV⁻¹ respectively. Since these figures are measured on a polycrystalline sample it is quite probable that the values for bulk AIN would be somewhat higher.
The piezoelectric measurements indicate that the positive c axis in the nitride films points away from the substrate. The piezoelectric measurements provide a simple means for identifying the positive c axis direction. -- The interferometric technique has also been used to measure the shear piezoelectric coefficient d₁₅ for AIN and GaN. This work represents the first application of this technique to measure this particular coefficient. The d₁₅ coefficients for AIN and GaN were found to be (-3.6 ± 0.1) pmV⁻¹ and (-3.1 ± 0.1) pmV⁻¹ respectively. The value for AIN agrees reasonably well with the only reported value available in the literature of -4.08 pmV⁻¹. The value of this coefficient for GaN has not been measured. -- Some initial investigations into the phenomenon of electrostriction in the compound semiconductors were also performed. It appears that these materials have both a piezoelectric response and a significant electrostrictive response. For the polycrystalline GaN and AIN, the values of the M₃₃ coefficients are of the order of 10⁻¹⁸ m²V⁻². The commercial single crystal GaN and GaAs wafers display an asymmetric response which cannot be explained.
Mode of access: World Wide Web.
Various pagings ill
Cheng, Chung-choi, and 鄭仲材. "Positron beam studies of fluorine implanted gallium nitride and aluminium gallium nitride." Thesis, The University of Hong Kong (Pokfulam, Hong Kong), 2009. http://hub.hku.hk/bib/B43278577.
Повний текст джерелаCheng, Chung-choi. "Positron beam studies of fluorine implanted gallium nitride and aluminium gallium nitride." Click to view the E-thesis via HKUTO, 2009. http://sunzi.lib.hku.hk/hkuto/record/B43278577.
Повний текст джерелаPopa, Laura C. "Gallium nitride MEMS resonators." Thesis, Massachusetts Institute of Technology, 2015. http://hdl.handle.net/1721.1/99296.
Повний текст джерелаCataloged from PDF version of thesis.
Includes bibliographical references (pages 187-206).
As a wide band-gap semiconductor, with large breakdown fields and saturation velocities, Gallium Nitride (GaN) has been increasingly used in high-power, high-frequency electronics and monolithic microwave integrated circuits (MMICs). At the same time, GaN also has excellent electromechanical properties, such as high acoustic velocities and low elastic losses. Together with a strong piezoelectric coupling, these qualities make GaN ideal for RF MEMS resonators. Hence, GaN technology offers a platform for the seamless integration of low-loss, piezoelectric RF MEMS resonators with high power, high frequency electronics. Monolithic integration of MEMS resonators with ICs would lead to reduced parasitics and matching constraints, enabling high-purity clocks and frequency-selective filters for signal processing and high-frequency wireless communications. This thesis highlights the physics and resonator design considerations that must be taken into account in a monolithically integrated solution. We then show devices that achieve the highest frequency-quality factor product in GaN resonators to date (1.56 x 1013). We also highlight several unique transduction mechanisms enabled by this technology, such as the ability to use the 2D electron gas (2DEG) channel of High Electron Mobility Transistors (HEMTs) as an electrode for transduction. This enables a unique out-of-line switching capability which allowed us to demonstrate the first DC switchable solid-state piezoelectric resonator. Finally, we discuss the benefits of using active HEMT sensing of the mechanical signal when scaling to GHz frequencies, which enabled the highest frequency lithographically defined resonance reported to date in GaN (3.5 GHz). These demonstrated features sh
by Laura C. Popa.
Ph. D.
Allums, Kimberly K. "Proton radiation and thermal stabilty [sic] of gallium nitride and gallium nitride devices." [Gainesville, Fla.] : University of Florida, 2006. http://purl.fcla.edu/fcla/etd/UFE0013123.
Повний текст джерелаHolmes, Kenneth L. "Two-dimensional modeling of aluminum gallium nitride/gallium nitride high electron mobility transistor." Thesis, Monterey, Calif. : Springfield, Va. : Naval Postgraduate School ; Available from National Technical Information Service, 2002. http://library.nps.navy.mil/uhtbin/hyperion-image/02Jun%5FHolmes.pdf.
Повний текст джерелаMareš, Petr. "Depozice Ga a GaN nanostruktur na křemíkový a grafenový substrát." Master's thesis, Vysoké učení technické v Brně. Fakulta strojního inženýrství, 2014. http://www.nusl.cz/ntk/nusl-231443.
Повний текст джерелаAnderson, David Richard. "Phonon-limited electron transport in gallium nitride and gallium nitride-based heterostructures, 1760-1851." Thesis, University of York, 2002. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.270104.
Повний текст джерелаWang, Siping S. M. Massachusetts Institute of Technology. "Gallium Nitride phononic crystal resonator." Thesis, Massachusetts Institute of Technology, 2015. http://hdl.handle.net/1721.1/99831.
Повний текст джерелаCataloged from PDF version of thesis.
Includes bibliographical references (pages 41-42).
We present a Gallium Nitride (GaN) Lamb Wave resonator using a Phononic Crystal (PnC) to selectively confine elastic vibrations with wide-band spurious mode suppression. A unique feature of the design demonstrated here is a folded PnC structure to relax energy confinement in the non-resonant dimension and to enable routing access of piezoelectric transducers inside the resonant cavity. This provides a clean spectrum over a wide frequency range and improves series resistance relative to transmission line or tethered resonators by allowing a low-impedance path for drive and sense electrodes. GaN resonators are demonstrated with wide-band suppression of spurious modes, f -Q product up to 3.06 x 1012, and resonator coupling coefficient k2.eff up to 0.23%. (filter BW up to 0.46%). Furthermore, these PnC GaN resonators exhibit record-breaking power handling, with IIP3 of +27.2dBm demonstrated at 993MHz.
by Siping Wang.
S.M.
Zhang, Anping. "Gallium nitride-based electronic devices." [Gainesville, Fla.] : University of Florida, 2001. http://etd.fcla.edu/etd/uf/2001/anp1299/Title.PDF.
Повний текст джерелаTitle from first page of PDF file. Document formatted into pages; contains vii, 145 p.; also contains graphics. Vita. Includes bibliographical references (p. 137-144).
Jackson, Helen C. "Effect of variation of silicon nitride passivation layer on electron irradiated aluminum gallium nitride/gallium nitride HEMT structures." Thesis, Air Force Institute of Technology, 2014. http://pqdtopen.proquest.com/#viewpdf?dispub=3629786.
Повний текст джерелаSilicon nitride passivation on AlGaN\GaN heterojunction devices can improve performance by reducing electron traps at the surface. This research studies the effect of displacement damage caused by 1 MeV electron irradiation as a function of the variation of passivation layer thickness and heterostructure layer variation on AlGaN/GaN HEMTs. The effects of passivation layer thickness are investigated at thicknesses of 0, 20, 50 and 120 nanometers on AlGaN\GaN test structures with either an AlN nucleation layer or a GaN cap structures which are then measured before and immediately after 1.0 MeV electron irradiation at fluences of 1016 cm-2. Hall system measurements are used to observe changes in mobility, carrier concentration and conductivity as a function of Si3N4 thickness. Models are developed that relate the device structure and passivation layer under 1 MeV radiation to the observed changes to the measured photoluminescence and deep level transient spectroscopy. A software model is developed to determine the production rate of defects from primary 1 MeV electrons that can be used for other energies and materials. The presence of either a 50 or 120 nm Si 3N4 passivation layer preserves the channel current for both and appears to be optimal for radiation hardness.
Fan, Arcara Victor. "Jonctions tunnel dans les hétérostructures des matériaux nitrures pour applications optoélectroniques." Thesis, Université Côte d'Azur, 2020. http://www.theses.fr/2020COAZ4010.
Повний текст джерелаTunnel junctions provide an alternative solution to issues that limit the efficiency of ultraviolet light emitting diodes, such as the high resistivity of p-doped AlGaN layers and the resulting poor hole injection. The objective fo this thesis is the optimization of GaN and AlGaN based tunnel junction LED structures and their structural and optoelectronic characterization. The growth of a JT LED entirely by MOCVD is industrially appealing, but the p-doped (Al)GaN layers developed by this technique suffer from the repassivation of the Mg acceptors by the hydrogen present in the growth chamber. We have tried and succeeded to minimize this problem by modifying the growth conditions of the tunnel junction. Positive results have been achieved on blue LEDs, in particular with GaN tunnel junctions including an InGaN interlayer that increases its tunnel transparency. However, this all MOCVD process seems difficult to optimize and its extension to AlGaN materials difficult. Thanks to a hybrid MOCVD+MBE growth approach, p-doped GaN and AlGaN layers can be obtained with active Mg acceptors while taking advantage of high quality active regions provided by MOCVD. With a GaN-based hybrid JT, we have been able to obtain, with both Si and Ge, higher levels of n++ doping than those of the MOCVD JTs, thus significantly reducing the operating voltage of the devices. The strong Ge doping of the GaN layers allowed us to obtain electron densities of the order of 5x1020cm-3 with state-of-the-art mobilities and resistivities, without introducing a strong constraint in the network. In the second part of this work, we have developed AlGaN-based JTs doped with Ge on UV LEDs by gradually changing their Al concentration up to a value of 70%. In the UV range, the JTs become of paramount importance by increasing the injection efficiency without compromising light extraction. High levels of Ge doping have been obtained leading to thin junctions as shown by electronic holography. Even if the voltage drops introduced by the use of JTs remain significant (a few volts), the injection of out-of-equilibrium holes allows for a significant increase of the injection efficiency in the LED leading to a strong increase of the quantum efficiency of these devices
Deatcher, Christopher J. "Growth and characterisation of gallium nitride and indium gallium nitride by MOVPE for photonic applications." Thesis, University of Strathclyde, 2004. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.400334.
Повний текст джерелаHoy, Daniel R. "Gallium Nitride and Aluminum Gallium Nitride Heterojunctions for Electronic Spin Injection and Magnetic Gadolinium Doping." The Ohio State University, 2012. http://rave.ohiolink.edu/etdc/view?acc_num=osu1331855661.
Повний текст джерелаMußer, Markus [Verfasser], and Oliver [Akademischer Betreuer] Ambacher. "Micro-System: Gallium Nitride RF-Broad-Band High-Power Amplifier = Mikrosystem: Gallium Nitride HF Breitband Hochleistungsverstärker." Freiburg : Universität, 2015. http://d-nb.info/1123482640/34.
Повний текст джерелаHess, Stefan. "Time-resolved spectroscopy of gallium nitride." Thesis, University of Oxford, 1999. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.301575.
Повний текст джерелаMartiÌnez, Charles E. "Phonon interactions in gallium nitride nanostructures." Thesis, University of Nottingham, 2005. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.430567.
Повний текст джерелаPiedra, Daniel Ph D. Massachusetts Institute of Technology. "Development of gallium nitride power transistors." Thesis, Massachusetts Institute of Technology, 2010. http://hdl.handle.net/1721.1/66454.
Повний текст джерела"November 2010." Cataloged from PDF version of thesis.
Includes bibliographical references (p. 78-79).
GaN-based high-voltage transistors have outstanding properties for the development of ultra-high efficiency and compact power electronics. This thesis describes a new process technology for the fabrication of GaN power devices optimized for their use in efficient power distribution systems in computer micro-processors. An existing process flow was used to fabricate the baseline single-finger transistors and additional process steps were developed and optimized to fabricate multi-finger devices with total gate widths up to 12mm. These transistors offer the current and on-resistance levels required by future GaN-based power converters. Transistors with various gate widths were fabricated and characterized by DC and capacitancevoltage measurements to study how the main transistor metrics scale with gate width.
by Daniel Piedra.
M.Eng.
Yoon, Joonah. "Electronic properties of gallium nitride nanowires." Thesis, Massachusetts Institute of Technology, 2008. http://hdl.handle.net/1721.1/45438.
Повний текст джерелаIncludes bibliographical references (leaves 123-131).
This thesis presents a systematic study of the electrical transport in GaN nanowires. Particularly, the effect of the surrounding dielectric on the conductivity of GaN nanowires is experimentally shown for the first time. Our GaN nanowires are grown by catalytic vapor growth methods, specifically hydride vapor phase epitaxy (HVPE) and chemical vapor deposition (CVD). TEM and XRD studies indicate that both of our HVPE and CVD grown GaN nanowires have the wurtzite single crystal structure. The crystal orientations along the wire axis are (1000) and (1010) for our HVPE and CVD grown nanowires, respectively. The mean diameters are 200 nm and 46 nm for the HVPE and the CVD grown nanowires, respectively. CVD GaN nanowires with three different surrounding configurations are prepared to study the effect of the surrounding dielectric. The GaN nanowires are either laid directly on a SiO2/Si substrate, or freely suspended between metal contacts, or embedded in SiO2. The conductivity is measured as a function of temperature, nanowire diameter, and the surrounding dielectric. The donor ionization energies are extracted from the temperature dependence of the conductivity. In all cases, two sets of the activation energies are obtained. One set of these activation energies shows an inverse dependence on nanowire radius and the other set is found to be independent of the radius. The inverse radius dependence of the activation energy is explained by the polarization charges, which are induced by the donor ions, at the interface between the nanowires and their surroundings. This so-called dielectric confinement is found to have a substantial effect, more than the quantum confinement effect, for GaN nanowires with diameter larger than 10 nm or so. The radius-independent activation energy is found to be due to the impurity band conduction near the surface. We also successfully fabricated nanowire field-effect transistors (FETs) using both HVPE and CVD grown GaN nanowires. For the thinnest CVD grown nanowires, complete control of the carrier density was achieved. The field-effect mobility of the CVD grown GaN nanowires is estimated to be - 18 cm2/V.s, which is more than an order of magnitude smaller than that of the bulk GaN.
(cont.) A redshift of the near-bandedge emission in the room-temperature photoluminescence measurements of the CVD grown GaN indicates a high impurity concentration. The metallic approximation using a capacitor model shows the carrier density to be - 4 x 1019cm-3. Reduction of the background impurities is expected to decrease the scattering from the ionized impurities and to improve the carrier mobility and switching behavior of the nanowire FETs.
by Joonah Yoon.
Ph.D.
Zhu, Tongtong. "Nanoscale electrical characterization of gallium nitride." Thesis, University of Cambridge, 2011. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.609346.
Повний текст джерелаOwsley, Jack Lee III. "CHARACTERIZATION OF DOPED GALLIUM NITRIDE SUBSTRATES." Wright State University / OhioLINK, 2012. http://rave.ohiolink.edu/etdc/view?acc_num=wright1357763392.
Повний текст джерелаShankar, Ramya. "Charge transport in gallium nitride nanowires." [Gainesville, Fla.] : University of Florida, 2009. http://purl.fcla.edu/fcla/etd/UFE0025011.
Повний текст джерелаMaffeis, Thierry Gabriel Georges. "Formation of metal-gallium nitride contacts." Thesis, Sheffield Hallam University, 2001. http://shura.shu.ac.uk/19998/.
Повний текст джерелаStevens, Lorin E. "Thermo-Piezo-Electro-Mechanical Simulation of AlGaN (Aluminum Gallium Nitride) / GaN (Gallium Nitride) High Electron Mobility Transistor." DigitalCommons@USU, 2013. http://digitalcommons.usu.edu/etd/1506.
Повний текст джерелаShih, Andy. "Resonant tunneling in gallium nitride and aluminum nitride nanowire heterostructures." Thesis, McGill University, 2013. http://digitool.Library.McGill.CA:80/R/?func=dbin-jump-full&object_id=117124.
Повний текст джерелаLes nanofils semi-conducteurs hétérostructurés composés de nitrure de gallium et d'aluminium III-V ont émergé comme des candidats prometteurs pour de nombreuses applications de dispositifs photoniques, allant de la lumière visible à l'infrarouge proche, moyen et lointain. Dans ce projet, les propriétés électriques et l'effet tunnel résonnant de nanofils semi-conducteurs hétérostructurés de nitrure de gallium et d'aluminium ont été étudiés. La résistance différentielle négative a été observée dans les mesures de courant-tension à la température ambiante et à 77 K pour les dispositifs à un seul nanofil ainsi que des dispositifs de grande surface avec plusieurs nanofils, ce qui confirme la présence d'effet tunnel résonnant à travers les barrières de nitrure d'aluminium. Les effets des différents profils de dopage de silicium ont également été discutés. Ce travail représente une étape préliminaire dans le développement des appareils intersousbandes de nanofils de nitrure de gallium tels que les lasers à cascade quantique et photodétecteurs infrarouge.
Ho, Kwok-Lun. "Metalorganic chemical vapor deposition of aluminum nitride and gallium nitride." Thesis, Massachusetts Institute of Technology, 1991. http://hdl.handle.net/1721.1/13142.
Повний текст джерелаCai, Xingmin. "Growth, doping and nanostructures of gallium nitride." Click to view the E-thesis via HKUTO, 2005. http://sunzi.lib.hku.hk/hkuto/record/B35806394.
Повний текст джерелаCai, Xingmin, and 蔡興民. "Growth, doping and nanostructures of gallium nitride." Thesis, The University of Hong Kong (Pokfulam, Hong Kong), 2005. http://hub.hku.hk/bib/B35806394.
Повний текст джерелаWinser, Andrew James. "Photoluminescence studies of arsenic-doped gallium nitride." Thesis, University of Nottingham, 2004. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.405387.
Повний текст джерелаFlannery, Lorraine Barbara. "Electrical and optoelectronic properties of gallium nitride." Thesis, University of Nottingham, 2002. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.268478.
Повний текст джерелаCALDAS, PAULA GALVAO. "NANOSCALE MECHANICAL DEFORMATION MECHANISMS OF GALLIUM NITRIDE." PONTIFÍCIA UNIVERSIDADE CATÓLICA DO RIO DE JANEIRO, 2015. http://www.maxwell.vrac.puc-rio.br/Busca_etds.php?strSecao=resultado&nrSeq=25364@1.
Повний текст джерелаCONSELHO NACIONAL DE DESENVOLVIMENTO CIENTÍFICO E TECNOLÓGICO
FUNDAÇÃO DE APOIO À PESQUISA DO ESTADO DO RIO DE JANEIRO
Neste trabalho foi estudada a deformação mecânica em filmes de GaN por nanoindentação. Um nanoindentador foi usado para induzir a nucleação de defeitos mecânicos na superfície das amostras de forma controlada. A morfologia das indentações e a microestrutura dos defeitos foram estudados com o uso da microscopia de força atômica e microscopia eletrônica de transmissão . Os resultados mostraram que nos estágios iniciais de deformação, o processo de nanoindentação promove o escorregamento em escala atômica de planos cristalinos que pode ser revertido se a carga é removida. Se a carga for aumentada ainda mais, a partir de uma tensão crítica, ocorre um grande evento pop-in com o escorregamento dos planos 1101, 1122 e 0001 produzindo então deformação plástica irreversível. A influência dos dopantes na deformação mecânica foi estudada e os resultados mostraram que é mais difícil produzir deformação mecânica em filmes de GaN dopado com Si e dopado com Mg do que no filme não dopado. A autorrecuperação que ocorre após a retirada da ponta foi estudada utilizando cristais de ZnO com diferentes orientações. O mecanismo de ativação térmica dos loops de discordância foi estudado através da observação da influência da temperatura no processo de autorrecuperação parcial dos cristais. Medidas de catodoluminescência foram usadas para identificar as distribuições de tensão associadas à deformação plástica permanente mostrando que esta induz regiões de tensão trativa ao longo das direções a 1120 nos filmes de GaN dopado e não dopado.
In this work, the mechanical deformation of GaN films was studied by nanoindentation. A nanoindenter was used to induce the nucleation of mechanical defects on the samples surfaces in a controlled manner. The morphology of the indentations and the microstructure of the defects were studied using atomic force microscopy and transmission electron microscopy. The results showed that in the early stages of deformation, the nanoindentation process promotes slip at the atomic scale of the pyramidal planes of the crystal that can be reversed if the load is removed. If load is further increased, locking of these atomic plains occur leading to a hardened crystal region. It acts as an extension of the tip of the indenter redistributing the applied stress. At a critical stress, a major pop-in event occurs with the slip of the 1101, 1122 and 0001 plains leading then to irreversible plastic deformation. The influence of doping on the mechanical deformation has been studied and the results showed that it is more difficult to produce mechanical deformation in GaN films doped with Si and Mg doped than in undoped films. The self-recovery that occurs after removal of the tip was investigated using ZnO crystals with different orientations. The mechanism of thermal activation of dislocation loops was studied by observing the influence of temperature on the self-recovery process of the crystals. Cathodoluminescence measures were used to identify the resulting stress distributions associated with permanent plastic deformation showing that this induces tensile regions along the a 1120 directions in doped and undoped GaN films.
Hari, Nikita. "Gallium nitride power electronics using machine learning." Thesis, University of Cambridge, 2019. https://www.repository.cam.ac.uk/handle/1810/288610.
Повний текст джерелаYeh, Theresa (Theresa I. ). "Efficient wireless charging with gallium nitride FETs." Thesis, Massachusetts Institute of Technology, 2014. http://hdl.handle.net/1721.1/91881.
Повний текст джерелаCataloged from PDF version of thesis.
Includes bibliographical references (pages 74-77).
Though wireless charging is more convenient than traditional wired charging methods, it is currently less efficient. This not only wastes power but can also result in a longer charging time. Improving the efficiency of wireless charging systems is equivalent to reducing the sources of loss in the system. In this work, we focus on losses originating from the transistor. Resonant inductive wireless charging systems were designed and implemented for efficiency comparisons. We show in our experiments that replacing the traditional Silicon MOSFET with a Gallium Nitride FET can increase the overall system efficiency by 5%.
by Theresa Yeh.
M. Eng.
Giam, Louise R. "Gallium Nitride (GaN) quantum dot layer formation." Thesis, Massachusetts Institute of Technology, 2006. http://hdl.handle.net/1721.1/35070.
Повний текст джерелаSumner, Joy. "Scanning probe microscopy studies on Gallium nitride." Thesis, University of Cambridge, 2008. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.612451.
Повний текст джерелаBoudjelida, Boumedienne. "Metal-aluminium gallium nitride Schottky contacts formation." Thesis, Sheffield Hallam University, 2006. http://shura.shu.ac.uk/19373/.
Повний текст джерелаKrishnamoorthy, Sriram. "Gallium Nitride Based Heterostructure Interband Tunnel Junctions." The Ohio State University, 2014. http://rave.ohiolink.edu/etdc/view?acc_num=osu1409019988.
Повний текст джерелаHarris, Brandon Eric. "Few cycle pulse laser induced damage studies of gallium oxide and gallium nitride." The Ohio State University, 2019. http://rave.ohiolink.edu/etdc/view?acc_num=osu1556891689968541.
Повний текст джерелаGotthold, David William. "Molecular beam epitaxy of gallium indium nitride arsenide for optoelectronic devices /." Digital version accessible at:, 2000. http://wwwlib.umi.com/cr/utexas/main.
Повний текст джерелаBaghani, Erfan. "Electrical properties of dislocations within the nitride based semiconductors gallium nitride and indium nitride." Thesis, University of British Columbia, 2012. http://hdl.handle.net/2429/43581.
Повний текст джерелаBaird, Lee G. "Near field imaging of gallium nitride nanowires for characterization of minority carrier diffusion." Thesis, Monterey, California : Naval Postgraduate School, 2009. http://edocs.nps.edu/npspubs/scholarly/theses/2009/Dec/09Dec%5FBaird.pdf.
Повний текст джерелаThesis Advisor(s): Haegel, Nancy M. Second Reader: Luscombe, James. "December 2009." Description based on title screen as viewed on January 27, 2010. Author(s) subject terms: Transport imaging, minority carrier, GaN nanowires, diffusion length, near-field scanning optical microscopy, NSOM. Includes bibliographical references (p. 63-64). Also available in print.
Ju, Wentao. "Experimental Investigation of the Epitaxial Lateral Overgrowth of Gallium Nitride and Simulation of Gallium Nitride Metalorganic Chemical Vapor Deposition Process." Ohio : Ohio University, 2003. http://www.ohiolink.edu/etd/view.cgi?ohiou1050589636.
Повний текст джерелаUnal, Ozer. "Interface studies in silicon nitride/silicon carbide and gallium indium arsenide/gallium arsenide systems." Case Western Reserve University School of Graduate Studies / OhioLINK, 1991. http://rave.ohiolink.edu/etdc/view?acc_num=case1059501714.
Повний текст джерелаMotayed, Abhishek. "Gallium nitride nanowire based electronic and optical devices." College Park, Md. : University of Maryland, 2007. http://hdl.handle.net/1903/7254.
Повний текст джерелаThesis research directed by: Electrical Engineering. Title from t.p. of PDF. Includes bibliographical references. Published by UMI Dissertation Services, Ann Arbor, Mich. Also available in paper.
Farrant, Luke. "Gallium nitride processing for high power microwave devices." Thesis, Cardiff University, 2005. http://orca.cf.ac.uk/56118/.
Повний текст джерелаSchuller, Timothy Adam. "Gallium nitride sensor devices fabrication techniques and characterisation." Thesis, University of Bristol, 2011. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.549688.
Повний текст джерелаSanz, Dorleta Cortaberria. "Fabrication and characterisation of novel gallium nitride lasers." Thesis, University of Bristol, 2006. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.445891.
Повний текст джерела