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Автор: Grafiati

Опубліковано: 15 червня 2024

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1

Liu, Hai Rui, and Jun Sheng Yu. "Characterization of Metal-Semiconductor Schottky Diodes and Application on THz Detection." Advanced Materials Research 683 (April 2013): 729–32. http://dx.doi.org/10.4028/www.scientific.net/amr.683.729.

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This paper presents a kind of air-bridged GaAs Schottky diodes which offer ultra low parasitic capacitance and series resistance in millimeter and THz wavelength. The Schottky barrier diodes have several advantages when used as millimeter wave and terahertz video, or power detectors. These include their fast time response, room temperature operation, simple structure and low cost. This paper describes the characterization of the metal-semiconductor Schottky diodes including principle, diode structure, non-linear voltage-current characteristic and signal-rectifying performance. For application, a quasi-optical THz detector was made by using the proposed Schottky diodes. It utilized a hyper hemispherical silicon lens to coupleand THz radiation to the diodes by integrating on a broadband planar bow-tie antenna. The measurement results of the Schottky diode based detector show a good room temperature performance.

2

Ozdemir, Ahmet Faruk, Adnan Calik, Guven Cankaya, Osman Sahin, and Nazim Ucar. "Effect of Indentation on I-V Characteristics of Au/n-GaAs Schottky Barrier Diodes." Zeitschrift für Naturforschung A 63, no. 3-4 (April 1, 2008): 199–202. http://dx.doi.org/10.1515/zna-2008-3-414.

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Au/n-GaAs Schottky barrier diodes (SBDs) have been fabricated. The effect of indentation on Schottky diode parameters such as Schottky barrier height (φb) and ideality factor (n) was studied by current-voltage (I-V) measurements. The method used for indentation was the Vickers microhardness test at room temperature. The experimental results showed that the I-V characteristics move to lower currents due to an increase of φb with increasing indentation weight, while contacts showed a nonideal diode behaviour.

3

Weikle, Robert M., S. Nadri, C. M. Moore, N. D. Sauber, L. Xie, M. E. Cyberey, N. Scott Barker, A. W. Lichtenberger, and M. Zebarjadi. "Thermal Characterization of Quasi-Vertical GaAs Schottky Diodes Integrated on Silicon Using Thermoreflectance and Electrical Transient Measurements." Additional Conferences (Device Packaging, HiTEC, HiTEN, and CICMT) 2019, DPC (January 1, 2019): 001293–310. http://dx.doi.org/10.4071/2380-4491-2019-dpc-presentation_tha3_009.

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Thermal management and design have been understood, for many years, as critical factors in the implementation of submillimeter-wave Schottky-diode-based circuits and instruments. Removal of heat is particularly important for frequency multipliers, as these circuits generally exhibit low-to-modest conversion efficiencies, and are usually driven with high-power sources to achieve usable output power in the submillimeter-wave region of the spectrum. Elevated diode junction temperature due to inadequate heat sinking is known to degrade performance, accelerate aging effects (for example, due to electromigration, ohmic contact deterioration, or thermally-induced stress), and can ultimately lead to device failure. The relatively-low thermal conductivity of GaAs (the predominant material technology for submillimeter-wave diodes), coupled with restrictions on diode anode size and geometry needed to minimize parasitics and achieve the device impedances required for high-frequency operation, present significant challenges and trade-offs between electrical and thermal designs of these devices. Recognition that heating is a major factor limiting efficiency and output power has prompted a number of approaches to mitigate excessive temperature rise in the junction of planar Schottky diodes, including the use of AlN or diamond as low-loss substrates that act as heat spreaders. A new diode topology, based on a quasi-vertical geometry that is realized through heterogeneous integration of GaAs with high-resistivity silicon, was recently developed at the University of Virginia for submillimeter-wave applications. Unlike planar diodes, the device structure of the quasi-vertical diode consists of a metal contact that underlies the diode's anode and epitaxial mesa, thus providing a large-area ohmic cathode contact that also serves as an integrated heat sink. Measurement of high-efficiency multipliers based on this technology suggest the quasi-vertical architecture provides an effective approach for heat removal and thermal management in Schottky diodes. This paper presents the first results reporting thermal performances of terahertz quasi-vertical GaAs Schottky diodes integrated on silicon. The devices are characterized using a thermoreflectance measurement technique, a method based on the change in refractive index, and therefore surface reflectivity, with changes in temperature. Heating and cooling temperature profiles and 2-D temperature maps are obtained for 3.5 micron and 5.5 micron diameter diodes. From these measurements, the device thermal resistances, junction temperatures, and thermal time-constants are extracted. Equivalent thermal circuit and finite element models are developed to study the device geometry, and extract material thermal parameters. The devices are also characterized using an electrical transient method, and the temperature and cooling transients found from this technique are found to be comparable to those obtained from thermoreflectance measurements. The quasi-vertical diodes studied in this work are shown to demonstrate a faster transient thermal response compared to flip-chip bonded terahertz diodes reported in the literature.

4

Klyuev, Alexey V., Arkady V. Yakimov, and Irene S. Zhukova. "1/f Noise in Ti–Au/n-Type GaAs Schottky Barrier Diodes." Fluctuation and Noise Letters 14, no. 03 (June 29, 2015): 1550029. http://dx.doi.org/10.1142/s0219477515500297.

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We have studied the forward current–voltage (I–V) characteristics of Ti–Au /n-type GaAs Schottky barrier diodes. However, we found some anomalies in I–V characteristics. Hence, we have considered a model that incorporates thermionic emission, thermionic-field emission and leakage components. Leakage component is linear and visible at rather small currents. The anomalies observed in the diode parameters were effectively construed in terms of the contribution of these multiple charge transport mechanisms across the interface of the diodes. It is shown that thermionic-field emission and leakage are the sources of low-frequency (1/f) noise in such type of diodes. Various Schottky diode parameters were also extracted from the I–V characteristics and current dependence of spectrum of 1/f voltage noise.

5

Powell, J. R., Colin Viegas, Hoshiar Singh Sanghera, P. G. Huggard, and Byron Alderman. "Comparing Novel MMIC and Hybrid Circuit High Efficiency GaAs Schottky Diode mm-Wave Frequency Doublers." Electronics 9, no. 10 (October 19, 2020): 1718. http://dx.doi.org/10.3390/electronics9101718.

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A novel Schottky diode frequency doubler in E-band, using biased series-connected diodes in the output waveguide, is reported. The doubler was implemented using a GaAs Schottky Monolithic Microwave Integrated Circuit (MMIC) process with integrated capacitors and beam leads. A comparison is made with a hybrid doubler using a more conventional single-ended configuration with two discrete diodes in a planar transmission line circuit. Both devices exhibit excellent performance over the 67–78 GHz design bandwidth, with the novel MMIC design producing 25 to 55 mW at 12 to 22% power conversion efficiency. Good agreement of measurements with simulations was also found.

6

Liu, Yang, Bo Zhang, Yinian Feng, Xiaolin Lv, Dongfeng Ji, Zhongqian Niu, Yilin Yang, Xiangyang Zhao, and Yong Fan. "Development of 340-GHz Transceiver Front End Based on GaAs Monolithic Integration Technology for THz Active Imaging Array." Applied Sciences 10, no. 21 (November 9, 2020): 7924. http://dx.doi.org/10.3390/app10217924.

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Frequency multipliers and mixers based on Schottky barrier diodes (SBDs) are widely used in terahertz (THz) imaging applications. However, they still face obstacles, such as poor performance consistency caused by discrete flip-chip diodes, as well as low efficiency and large receiving noise temperature. It is very hard to meet the requirement of multiple channels in THz imaging array. In order to solve this problem, 12-μm-thick gallium arsenide (GaAs) monolithic integrated technology was adopted. In the process, the diode chip shared the same GaAs substrate with the transmission line, and the diode’s pads were seamlessly connected to the transmission line without using silver glue. A three-dimensional (3D) electromagnetic (EM) model of the diode chip was established in Ansys High Frequency Structure Simulator (HFSS) to accurately characterize the parasitic parameters. Based on the model, by quantitatively analyzing the influence of the surface channel width and the diode anode junction area on the best efficiency, the final parameters and dimensions of the diode were further optimized and determined. Finally, three 0.34 THz triplers and subharmonic mixers (SHMs) were manufactured, assembled, and measured for demonstration, all of which comprised a waveguide housing, a GaAs circuit integrated with diodes, and other external connectors. Experimental results show that all the triplers and SHMs had great performance consistency. Typically, when the input power was 100 mW, the output power of the THz tripler was greater than 1 mW in the frequency range of 324 GHz to 352 GHz, and a peak efficiency of 6.8% was achieved at 338 GHz. The THz SHM exhibited quite a low double sideband (DSB) noise temperature of 900~1500 K and a DSB conversion loss of 6.9~9 dB over the frequency range of 325~352 GHz. It is indicated that the GaAs monolithic integrated process, diodes modeling, and circuits simulation method in this paper provide an effective way to design THz frequency multiplier and mixer circuits.

7

KAHVECI, OSMAN, ABDULLAH AKKAYA, ENISE AYYILDIZ, and ABDÜLMECIT TÜRÜT. "COMPARISON OF THE Ti/n-GaAs SCHOTTKY CONTACTS’ PARAMETERS FABRICATED USING DC MAGNETRON SPUTTERING AND THERMAL EVAPORATION." Surface Review and Letters 24, no. 04 (August 10, 2016): 1750047. http://dx.doi.org/10.1142/s0218625x17500470.

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We have fabricated the Ti/[Formula: see text]-type GaAs Schottky diodes (SDs) by the DC magnetron deposition and thermal evaporation, cut from the same GaAs substrates, and we have made a comparative study of the current–voltage ([Formula: see text]–[Formula: see text]) measurements of both SDs in the measurement temperature range of 160–300[Formula: see text]K with steps of 10[Formula: see text]K. The barrier height (BH) values of about 0.82 and 0.76[Formula: see text]eV at 300[Formula: see text]K have been obtained for the sputtered and evaporated SDs, respectively. It has been seen that the apparent BH value for the diodes has decreased with decreasing temperature obeying the single-Gaussian distribution (GD) for the evaporated diode and the double-GD for the sputtered diode over the whole measurement temperature range. The increment in BH and observed discrepancies in the sputtered diode have been attributed to the reduction in the native oxide layer present on the substrate surface by the high energy of the sputtered atoms and to sputtering-induced defects present in the near-surface region. We conclude that the thermal evaporation technique yields better quality Schottky contacts for use in electronic devices compared to the DC magnetron deposition technique.

8

YILDIRIM, N., H. DOGAN, H. KORKUT, and A. TURUT. "DEPENDENCE OF CHARACTERISTIC DIODE PARAMETERS IN Ni/n-GaAs CONTACTS ON THERMAL ANNEALING AND SAMPLE TEMPERATURE." International Journal of Modern Physics B 23, no. 27 (October 30, 2009): 5237–49. http://dx.doi.org/10.1142/s0217979209053564.

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We have prepared the sputtered Ni /n- GaAs Schottky diodes which consist of as-deposited, and diodes annealed at 200 and 400°C for 2 min. The effect of thermal annealing on the temperature-dependent current–voltage (I–V) characteristics of the diodes has been experimentally investigated. Their I–V characteristics have been measured in the temperature range of 60–320 K with steps of 20 K. It has been seen that the barrier height (BH) slightly increased from 0.84 (as-deposited sample) to 0.88 eV at 300 K when the contact has been annealed at 400°C. The SBH increased whereas the ideality factor decreased with increasing annealing temperature for each sample temperature. The I–V measurements showed a dependence of ideality factor n and BH on the measuring temperature that cannot be explained by the classical thermionic emission theory. The experimental data are consistent with the presence of an inhomogeneity of the SBHs. Therefore, the temperature dependent I–V characteristics of the diodes have been discussed in terms of the multi-Gaussian distribution model. The experimental data good have agree with the fitting curves over whole measurement temperature range indicating that the SBH inhomogeneity of our as-deposited and annealed Ni /n- GaAs SBDs can be well-described by a double-Gaussian distribution. The slope of the nT versus T plot for the samples has approached to unity with increasing annealing temperature and becomes parallel to that of the ideal Schottky contact behavior for the 400°C annealed diode. Thus, it has been concluded that the thermal annealing process translates the metal-semiconductor contacts into thermally stable Schottky contacts.

9

Gromov, Dmitry, and Vadim Elesin. "Long-term radiation effects in GaAs microwave devices exposed to pulsed ionizing radiation." ITM Web of Conferences 30 (2019): 10005. http://dx.doi.org/10.1051/itmconf/20193010005.

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The investigation results of the GaAs microwave devices characteristics under pulse irradiation are presented. The study covers the field effect transistor with Schottky barrier, pseudomorphic high-electron mobility transistors and resonant tunnelling diodes implemented in GaAs technology processes. It has been demonstrated that GaAs MESFET, pHEMT and RTDs may show the long-term parameter recovery undo pulsed ionizing exposure.

10

CROWE, THOMAS W., ROBERT J. MATTAUCH, ROBERT M. WEIKLE, and UDAYAN V. BHAPKAR. "TERAHERTZ GaAs DEVICES AND CIRCUITS FOR HETERODYNE RECEIVER APPLICATIONS." International Journal of High Speed Electronics and Systems 06, no. 01 (March 1995): 125–61. http://dx.doi.org/10.1142/s0129156495000043.

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GaAs Schottky barrier diodes are used in heterodyne receiver applications to frequencies as high as 4,000 GHz. The primary application that has driven this technology has been radio astronomy. However, other applications are now also very important, particularly studies of the constituents of the Earth’s atmosphere. This paper presents a summary of this increasingly important technology. The requirements that the diodes must meet and the benefits of GaAs Schottky devices are discussed. The optimization of the diodes for frequency mixing and multiplication throughout the frequency range of interest is overviewed. The analysis of terahertz frequency electronic transport in the diodes is then briefly considered with an emphasis on numerical modeling techniques. The typical circuit designs and the efficient coupling of energy are considered, and the state-of-the-art systems are reviewed. Finally, ongoing and future research topics are discussed. It is concluded that although this technology is quite well developed, much remains to be done, particularly in the areas of combining accurate circuit and device simulations for optimization and design purposes and the development of lower cost systems.

11

Vittone, E., P. Olivero, F. Nava, C. Manfredotti, A. Lo Giudice, F. Fizzotti, and G. Egeni. "Lateral IBIC analysis of GaAs Schottky diodes." Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 231, no. 1-4 (April 2005): 513–17. http://dx.doi.org/10.1016/j.nimb.2005.01.109.

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12

Shi, Z. Q., and W. A. Anderson. "Cryogenic processing of metal/GaAs schottky diodes." Solid-State Electronics 35, no. 10 (October 1992): 1427–32. http://dx.doi.org/10.1016/0038-1101(92)90078-q.

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13

Konishi, Y., S. T. Allen, M. Reddy, M. J. W. Rodwell, R. P. Smith, and J. Liu. "AlAs/GaAs Schottky-collector resonant-tunnel-diodes." Solid-State Electronics 36, no. 12 (December 1993): 1673–76. http://dx.doi.org/10.1016/0038-1101(93)90212-9.

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14

Pham, Q. P., W. M. Kelly, P. Maaskant, and J. O'Brien. "High reliability sputtered Schottky diodes on GaAs." International Journal of Infrared and Millimeter Waves 12, no. 1 (January 1991): 23–31. http://dx.doi.org/10.1007/bf01041880.

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15

Park, Il-Yong, and Yearn-Ik Choi. "Analytic Breakdown Modeling for GaAs Schottky Diodes." Physica Scripta T79, no. 1 (1999): 314. http://dx.doi.org/10.1238/physica.topical.079a00314.

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16

Crowe, T. W., R. J. Mattauch, H. P. Roser, W. L. Bishop, W. C. B. Peatman, and X. Liu. "GaAs Schottky diodes for THz mixing applications." Proceedings of the IEEE 80, no. 11 (1992): 1827–41. http://dx.doi.org/10.1109/5.175258.

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17

Palmour, John W. "Energy Efficiency: The Commercial Pull for SiC Devices." Materials Science Forum 527-529 (October 2006): 1129–34. http://dx.doi.org/10.4028/www.scientific.net/msf.527-529.1129.

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As SiC devices begin to become commercially available, it is becoming clear that electrical efficiency improvement is one of the key drivers for their adoption. For RF applications, SiC MESFETs have the ability to be easily linearized via digital pre-distortion to offer a 47% improvement in efficiency. In broadband WiMax applications, SiC MESFETs offer more than double the efficiency versus using GaAs MESFETs. SiC Schottky diodes are allowing up to a 25% reduction in losses in power supplies for computers and servers when used in the power factor correction circuit. For motor control, SiC Schottkys allow up to a 33% reduction in losses, as demonstrated for a 3 HP motor drive. Even higher efficiencies can be obtained when the Schottkys are combined with a SiC switch. A 400 W boost converter has been demonstrated using a SiC MOSFET and Schottky diode, operating at >200° C, with an extremely high efficiency of 98%. These improvements in electrical efficiency can have a significant impact in reducing overall electricity consumption worldwide, impacting virtually every aspect of electrical usage, ranging from information technology to motor control, with potential savings of $35 billion/yr.

18

Tan, Shih-Wei, and Shih-Wen Lai. "A Current Transport Mechanism on the Surface of Pd-SiO2Mixture for Metal-Semiconductor-Metal GaAs Diodes." Advances in Materials Science and Engineering 2013 (2013): 1–4. http://dx.doi.org/10.1155/2013/531573.

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This paper presents a current transport mechanism of Pd metal-semiconductor-metal (MSM) GaAs diodes with a Schottky contact material formed by intentionally mixing SiO2into a Pd metal. The Schottky emission process, where the thermionic emission both over the metal-semiconductor barrier and over the insulator-semiconductor barrier is considered on the carrier transport of a mixed contact of Pd and SiO2(MMO) MSM diodes, is analyzed. The image-force lowering is accounted for. In addition, with the applied voltage increased, the carrier recombination is thus considered. The simulation data are presented to explain the experimental results clearly.

19

Ведь, М. В., М. В. Дорохин, B. П. Лесников, Д. А. Павлов, Ю. В. Усов, А. В. Кудрин, П. Б. Дёмина, А. В. Здоровейщев та Ю. А. Данилов. "Диодные структуры на основе магнитных гетеропереходов (In, Fe)Sb/GaAs". Письма в журнал технической физики 45, № 13 (2019): 33. http://dx.doi.org/10.21883/pjtf.2019.13.47955.17812.

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The current-voltage characteristics of light-emitting diodes based on InGaAs/GaAs heterostructures with an injector made of a diluted magnetic semiconductor (In,Fe)Sb are investigated. The current-voltage characteristics of the (In,Fe)Sb/n-GaAs and (In,Fe)Sb/p-GaAs structures are analyzed. The band diagrams of heterojunctions are described. It is shown that the studied structures are similar to structures with a Schottky barrier by the current transfer mechanism.

20

Wang, Xiaolei, Xupeng Sun, Shuainan Cui, Qianqian Yang, Tianrui Zhai, Jinliang Zhao, Jinxiang Deng, and Antonio Ruotolo. "Physical Investigations on Bias-Free, Photo-Induced Hall Sensors Based on Pt/GaAs and Pt/Si Schottky Junctions." Sensors 21, no. 9 (April 25, 2021): 3009. http://dx.doi.org/10.3390/s21093009.

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Hall-effect in semiconductors has wide applications for magnetic field sensing. Yet, a standard Hall sensor retains two problems: its linearity is affected by the non-uniformity of the current distribution; the sensitivity is bias-dependent, with linearity decreasing with increasing bias current. In order to improve the performance, we here propose a novel structure which realizes bias-free, photo-induced Hall sensors. The system consists of a semi-transparent metal Pt and a semiconductor Si or GaAs to form a Schottky contact. We systematically compared the photo-induced Schottky behaviors and Hall effects without net current flowing, depending on various magnetic fields, light intensities and wavelengths of Pt/GaAs and Pt/Si junctions. The electrical characteristics of the Schottky photo-diodes were fitted to obtain the barrier height as a function of light intensity. We show that the open-circuit Hall voltage of Pt/GaAs junction is orders of magnitude lower than that of Pt/Si, and the barrier height of GaAs is smaller. It should be attributed to the surface states in GaAs which block the carrier drifting. This work not only realizes the physical investigations of photo-induced Hall effects in Pt/GaAs and Pt/Si Schottky junctions, but also opens a new pathway for bias-free magnetic sensing with high linearity and sensitivity comparing to commercial Hall-sensors.

21

Lakhdari, Issam, Nouredine Sengouga, Madani Labed, Toufik Tibermacine, Riaz Mari, and Mohamed Henini. "Schottky contact diameter effect on the electrical properties and interface states of Ti/Au/p-AlGaAs/GaAs/Au/Ni/Au Be-doped p-type MBE Schottky diodes." Semiconductor Science and Technology 37, no. 5 (April 13, 2022): 055022. http://dx.doi.org/10.1088/1361-6641/ac612a.

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Abstract Schottky diodes based on Be-doped p-type AlGaAs were grown by molecular beam epitaxy and their current–voltage (I–V) and capacitance–voltage (C–V) characteristics measured. The Schottky and Ohmic contacts are Ti/Au and Au/Ni/Au, respectively. The effect of the Schottky contact diameter on I–V and C–V characteristics was studied. To elucidate this effect, the Schottky diode figures of merits and interface states are extracted from I–V and C–V characteristics, respectively. It was found that interface states density increases with increasing Schottky contact diameter then saturates beyond 400 µm. The frequency dependence of the C–V characteristics was also related to these interface states. The results of this present study can help choosing the right Schottky contact dimensions.

22

Fischler, W., P. Buchberger, R. A. Höpfel, and G. Zandler. "Ultrafast reflectivity changes in photoexcited GaAs Schottky diodes." Applied Physics Letters 68, no. 20 (May 13, 1996): 2778–80. http://dx.doi.org/10.1063/1.116604.

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23

Ashkinazi, G., B. Meyler, M. Nathan, L. Zolotarevski, and O. Zolotarevski. "Breakdown voltage of high-voltage GaAs Schottky diodes." Solid-State Electronics 36, no. 12 (December 1993): 1793–94. http://dx.doi.org/10.1016/0038-1101(93)90229-j.

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24

Adams, J. G., A. Jelenski, D. H. Navon, and Ting-Wei Tang. "Numerical analysis of GaAs epitaxial-layer Schottky diodes." IEEE Transactions on Electron Devices 34, no. 9 (September 1987): 1963–70. http://dx.doi.org/10.1109/t-ed.1987.23182.

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25

Crowe, T. W., and R. J. Mattauch. "Conversion Loss in GaAs Schottky-Barrier Mixer Diodes." IEEE Transactions on Microwave Theory and Techniques 34, no. 7 (July 1986): 753–60. http://dx.doi.org/10.1109/tmtt.1986.1133437.

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26

Sharda, H., K. Prasad, L. Faraone, and A. G. Nassibian. "Annealing studies on Pd/n-GaAs Schottky diodes." Semiconductor Science and Technology 6, no. 8 (August 1, 1991): 765–70. http://dx.doi.org/10.1088/0268-1242/6/8/009.

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27

Paccagnella, A., A. Callegari, E. Latta, and M. Gasser. "Schottky diodes on hydrogen plasma treatedn‐GaAs surfaces." Applied Physics Letters 55, no. 3 (July 17, 1989): 259–61. http://dx.doi.org/10.1063/1.101922.

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28

Yasuoka, Yoshizumi, Hiromitsu Takao, and Narumi Inoue. "Fabrication of sub-0.5-micron GaAs Schottky diodes." Microelectronic Engineering 11, no. 1-4 (April 1990): 101–4. http://dx.doi.org/10.1016/0167-9317(90)90081-4.

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29

Gao, Xian, Ji Long Tang, Dan Fang, Fang Chen, Shuang Peng Wang, Hai Feng Zhao, Xuan Fang, et al. "The Electrical Characteristics of GaAs-MgO Interfaces of GaAs MIS Schottky Diodes." Advanced Materials Research 1118 (July 2015): 270–75. http://dx.doi.org/10.4028/www.scientific.net/amr.1118.270.

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Many researches pay attention to the metal-semiconductor interface barrier, due to its effect on device. Deliberate growing an interface layer to affect and improve the quality of device, especially metal-insulator-semiconductor (MIS) structures, arouses wide attention. In this paper, Be-doped GaAs was grown on substrate wafer by molecular beam epitaxy (MBE) on purpose before depositing insulator layer, and then MgO film as the dielectric interface layer of Au/GaAs were deposited using atomic layer deposition (ALD) method. The interface electrical characteristics of the metal-insulator-semiconductor (MIS) structures were investigated in detail. The barrier height and ideal factor of GaAs diode parameters were calculated by means of current-voltage (I-V) characteristics. Experimental result showed that along with the increasing of the doping content, the Schottky barrier height increasing, but the ideal factor decrease at first and then increase.

30

Martinez Gil, Javier, Diego Moro-Melgar, Artur Negrus, Ion Oprea, and Oleg Cojocari. "Efficiency Assessment of Traditional GaAs and Low-Power InGaAs Schottky Diodes in Full-Band Mixers at 0.3 THz." Electronics 12, no. 21 (November 3, 2023): 4518. http://dx.doi.org/10.3390/electronics12214518.

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In this paper, we present and compare two different full-band WR3.4 Sub-Harmonic Mixers (SHMs), featuring traditional GaAs and the novel low-barrier InGaAs discrete diodes. In this study, an Active Multiplier Chain (AMC) is used as a Local Oscillator source, which provides peak powers beyond 20 mW. The GaAs mixer presents Single-Sideband (SSB) Conversion Loss (CL) of 10 dB and Double-Sideband (DSB) Noise Temperature (NT) of 3000 K across the entire RF and IF bands when an LO power of 6–10 mW is applied. The low-barrier mixer featuring the new and improved batch of InGaAs diodes performs SSB Conversion Loss of 15 dB and DSB Noise Temperature of 9000 K, using LO powers of 0.5 mW. In this work, a comparison of the CL and NT of both mixers is carried out, highlighting the excellent performances of GaAs diodes and the minimum LO power requirements needed by InGaAs counterparts, as well as future perspectives in InGaAs mixer performances. The mixers and diodes were fully designed, fabricated, and tested at ACST GmbH.

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Klyuev, Alexey V., and Arkady V. Yakimov. "Investigation of 1/f Noise and Superimposed RTS Noise in Ti–Au/n-Type GaAs Schottky Barrier Diodes." Fluctuation and Noise Letters 14, no. 04 (November 9, 2015): 1550041. http://dx.doi.org/10.1142/s0219477515500418.

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Low frequency noise characteristics of Schottky diodes are investigated. Two noise components were found in experimental noise records: random telegraph signal (RTS), caused by burst noise, and 1/f Gaussian noise. The noise is sampled and recorded on a PC. Then, in addition to the spectrum, the probability density function (pdf) of the total noise is analyzed. In the case of the mixture of the burst noise and Gaussian (1/f) noise, the pdf has two maxima separated by a local minimum. Extraction of burst noise component from Gaussian noise background was performed using the pdf, standard signal detection theory, and advanced signal-processing techniques. It is concluded that the RTS noise and 1/f noise have different physical origins in Schottky diodes. The raw noise is split into two components. One appeared to be burst noise with a Lorentzian-like spectral shape. The other component is 1/f noise. Having extracted 1/f noise, we have studied the dependence of noise spectral values on the current across the diode.

32

Prikhodko, A., I. Belikov, D. Mikhailov, A. Shurakov, and G. Goltsman. "Towards multipixel THz Schottky diode detector with a single RF output line." Journal of Physics: Conference Series 2086, no. 1 (December 1, 2021): 012063. http://dx.doi.org/10.1088/1742-6596/2086/1/012063.

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Abstract We propose the design of a dual-pixel array of Schottky diodes. Each diode is fixed between the bow-tie antenna arms on top of a SI-GaAs membrane acting as a waveguide backshort for efficient coupling of the antenna to the feedline of high-directivity horn. The detector utilizes a single RF output line: microwave reflectometer is used for the readout. The pixels are equipped with dual-mode resonator filters to eliminate the cross-talk. We evaluate the design proposed via numerical simulation and performance tests of the array subunits: NEP of 300 pW/Hz0.5 and dynamic range of 24 dB are demonstrated at 137.5 GHz.

33

Uchida, Yoko, Tatsuo Yokotsuka, Hisao Nakashima, and Shinichiro Takatani. "Electrical properties of thermally stable LaB6/GaAs Schottky diodes." Applied Physics Letters 50, no. 11 (March 16, 1987): 670–72. http://dx.doi.org/10.1063/1.98061.

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34

Arakaki, Hisashi, Kazutoshi Ohashi, and Tomoko Sudou. "Sputter-induced defects in Zn-doped GaAs Schottky diodes." Semiconductor Science and Technology 19, no. 1 (October 30, 2003): 127–32. http://dx.doi.org/10.1088/0268-1242/19/1/021.

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35

Zaidi, S. H., and A. K. Jonscher. "Spectroscopy of delayed electronic transitions in GaAs Schottky diodes." Semiconductor Science and Technology 2, no. 9 (September 1, 1987): 587–96. http://dx.doi.org/10.1088/0268-1242/2/9/005.

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36

Lalinský, T., D. Gregušová, Ž. Mozolová, J. Breza, and P. Vogrinčič. "High‐temperature stable Ir‐Al/n‐GaAs Schottky diodes." Applied Physics Letters 64, no. 14 (April 4, 1994): 1818–20. http://dx.doi.org/10.1063/1.111988.

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37

Lechuga, L. M., A. Calle, D. Golmayo, and F. Briones. "The ammonia sensitivity of Pt/GaAs Schottky barrier diodes." Journal of Applied Physics 70, no. 6 (September 15, 1991): 3348–54. http://dx.doi.org/10.1063/1.349270.

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38

Shepherd, P. R., and M. J. Cryan. "Schottky diodes for analogue phase shifters in GaAs MMICs." IEEE Transactions on Microwave Theory and Techniques 44, no. 11 (1996): 2112–16. http://dx.doi.org/10.1109/22.543970.

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39

Svensson, Stefan P. "Al–Ga–GaAs multimetal Schottky diodes prepared by MBE." Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 3, no. 2 (March 1985): 760. http://dx.doi.org/10.1116/1.583137.

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40

St. Jean, C. A., W. L. Bishop, B. K. Sarpong, S. M. Marazita, and T. W. Crowe. "Novel fabrication of Ti-Pt-Au/GaAs Schottky diodes." IEEE Transactions on Electron Devices 47, no. 7 (July 2000): 1465–68. http://dx.doi.org/10.1109/16.848293.

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41

Röser, H. P., H. W. Hübers, T. W. Crowe, and W. C. B. Peatman. "Nanostructure GaAS Schottky diodes for far-infrared heterodyne receivers." Infrared Physics & Technology 35, no. 2-3 (March 1994): 451–62. http://dx.doi.org/10.1016/1350-4495(94)90102-3.

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42

Vearey-Roberts, A. R., and D. A. Evans. "Modification of GaAs Schottky diodes by thin organic interlayers." Applied Physics Letters 86, no. 7 (2005): 072105. http://dx.doi.org/10.1063/1.1864255.

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43

Von Roos, O., and Ke-Li Wang. "Conversion Losses in GaAs Schottky-Barrier Diodes (Short Paper)." IEEE Transactions on Microwave Theory and Techniques 34, no. 1 (January 1986): 183–88. http://dx.doi.org/10.1109/tmtt.1986.1133301.

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44

Eftekhari, G. "Electrical characteristics of selenium-treated GaAs MIS Schottky diodes." Semiconductor Science and Technology 8, no. 3 (March 1, 1993): 409–11. http://dx.doi.org/10.1088/0268-1242/8/3/018.

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45

Lin, Chia-Chien, and Meng-Chyi Wu. "Electrical and structural properties of Re/GaAs Schottky diodes." Journal of Applied Physics 85, no. 7 (April 1999): 3893–96. http://dx.doi.org/10.1063/1.369777.

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46

Zheng, Renzhou, Jingbin Lu, Xiaoyi Li, Yu Wang, Yumin Liu, Xu Xu, Ziyi Chen, and Xue Zhang. "Optimization design of GaAs-based betavoltaic batteries with p–n junction and Schottky barrier structures." Journal of Physics D: Applied Physics 55, no. 19 (February 16, 2022): 194003. http://dx.doi.org/10.1088/1361-6463/ac526a.

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Abstract This paper presents the calculation model and the optimization design of the GaAs-based betavoltaic batteries with p–n junction and Schottky barrier structures. First of all, by using the Monte Carlo code, the transport process and energy deposition distribution of the 63 Ni source beta particles in the GaAs material are simulated. The relationships between the output parameters of batteries and the physical parameters of energy converter such as p–n junction depth, Schottky metal thickness, depletion region width and doping concentrations are discussed through the numerical calculation. For the GaAs p–n junction battery, the maximum output power density of 0.135 μ W cm − 2 can be achieved when the junction depth is x j = 0.05 μ m , the doping concentrations are N a = 10 18 cm − 3 and N d = 2 × 10 15 cm − 3 . Meanwhile, the short-circuit current density, open-circuit voltage, filling factor and energy conversion efficiency are 0.254 μ A cm − 2 , 0.638 V, 83.3% and 2.63%, respectively. Among the selected metals of Au, Pd, Ni and Pt for the GaAs Schottky barrier diodes, the Pt-GaAs battery has the best output performance due to its large work function. The maximum output power density of 0.169 μ W cm − 2 can be achieved when a 20 nm thick Schottky metal Pt is selected and the doping concentration is N d = 10 15 cm − 3 . The associated output parameters of the battery are 0.234 μ A cm − 2 , 0.835 V, 86.5% and 3.29%, respectively.

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YILDIRIM, NEZIR, ABDULMECIT TURUT, and HULYA DOGAN. "CURRENT–VOLTAGE CHARACTERISTICS OF THERMALLY ANNEALED Ni/n-GaAs SCHOTTKY CONTACTS." Surface Review and Letters 25, no. 04 (May 11, 2018): 1850082. http://dx.doi.org/10.1142/s0218625x18500828.

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The Schottky barrier type Ni/[Formula: see text]-GaAs contacts fabricated by us were thermally annealed at 600[Formula: see text]C and 700[Formula: see text]C for 1[Formula: see text]min. The apparent barrier height [Formula: see text] and ideality factor of the diodes were calculated from the forward bias current–voltage characteristic in 60–320[Formula: see text]K range. The [Formula: see text] values for the nonannealed and 600[Formula: see text]C and 700[Formula: see text]C annealed diodes were obtained as 0.80, 0.81 and 0.67[Formula: see text]eV at 300[Formula: see text]K, respectively. Thus, it has been concluded that the reduced barrier due to the thermal annealing at 700[Formula: see text]C promises some device applications. The current preferentially flows through the lowest barrier height (BH) with the temperature due to the BH inhomogeneities. Therefore, it was seen that the [Formula: see text] versus [Formula: see text] plots for the nonannealed and annealed diodes showed the linear behavior according to Gaussian distributions.

48

Ismail, A., J. M. Palau, E. Vieujot, and L. Lassabatere. "Electron beam effect on GaAs real surfaces and on Ag-GaAs Schottky diodes." Surface Science Letters 157, no. 2-3 (July 1985): A386. http://dx.doi.org/10.1016/0167-2584(85)91097-7.

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49

Ismail, A., J. M. Palau, E. Vieujot, and L. Lassabatere. "Electron beam effect on GaAs real surfaces and on AgGaAs schottky diodes." Surface Science 157, no. 2-3 (July 1985): 319–26. http://dx.doi.org/10.1016/0039-6028(85)90675-2.

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50

Schmutzler, H. J., W. Platen, D. Kohl, and K. Wolter. "Process Dependent Interface States of Ag/(110)GaAs Schottky Diodes." Materials Science Forum 38-41 (January 1991): 1409–14. http://dx.doi.org/10.4028/www.scientific.net/msf.38-41.1409.

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