Дисертації з теми "GaAs Schottky diodes"
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Chegroune, Kamel. "Realisation et caracterisation de diodes schottky submillimetriques metal-gaas." Toulouse 3, 1986. http://www.theses.fr/1986TOU30166.
Daboo, Cyrus. "Surface plasmon enhanced quantum efficiency of GaAs-Au Schottky diodes." Thesis, University of Cambridge, 1991. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.386416.
Elguennouni, Driss. "Réalisation d'un ensemble automatisé de mesures d'admittance : application à l'étude des diodes Schottky Al/GaAs et YSi1,7/Si." Grenoble 1, 1989. http://www.theses.fr/1989GRE10092.
Carton, Patrick. "Caractérisation de GaAs massif et contraste EBIC des dislocations." Lille 1, 1990. http://www.theses.fr/1990LIL10052.
Bouillaud, Hugo. "Fabrication et optimisation des caractéristiques thermiques de diodes Schottky de la filière GaAs et reportées sur SiHR pour des applications de multiplication de fréquences." Electronic Thesis or Diss., Université de Lille (2022-....), 2023. http://www.theses.fr/2023ULILN043.
The exponential needs associated with applications exploiting the THz domain require to expand the range of available sources and optimize their fabrication processes. In this thesis, we focused on schottky diodes for its use as frequency multipliers. Our experimental research involved optimizing the characteristics of GaAs schottky diodes through the development and implementation of an innovative fabrication process. First, we fabricated GaAs schottky diodes on GaAs substrate with several aspect ratios in order to make a reference in terms of device. Then we fabricated a flip-chip device for a 150 GHz frequency multiplication application in a waveguide block. Finally, in order to enhance the power handling of the diodes, we optimized their thermal dissipation by transferring their epitaxial structure onto a substrate with higher thermal conductivity : SiHR (high resistivity silicon). The complete technological processes for these fabrications are detailed, and the last part of the study is dedicated to their characterization. On one hand, we assessed any variations in the characteristics of GaAs diodes on GaAs induced by the different aspect ratios. On the other hand, we compared the two technologies on SiHR and GaAs substrates. This work demonstrates the potential of this type of transferred technology, where a significant reduction of thermal resistance is observed and is associated with a notable improvement of the series resistance
Haris, Norshakila. "Three-dimensional multilayer integration and characterisation of CPW MMIC components for future wireless communications." Thesis, University of Manchester, 2017. https://www.research.manchester.ac.uk/portal/en/theses/threedimensional-multilayer-integration-and-characterisation-of-cpw-mmic-components-for-future-wireless-communications(89ddea33-4de2-43ba-b8dc-dbc032b868e7).html.
Vildeuil, Jean-Charles. "Caractérisation et modélisation basse fréquence de transistors PHEMT AlGaAs/InGaAS/GaAs : bruits du canal, de la grille et corrélation." Montpellier 2, 2000. http://www.theses.fr/2000MON20151.
Jung, Cécile. "Conception et fabrication de circuits intégrés basés sur les nano-diodes Schottky GaAs fonctionnant aux fréquences THz et sub-THz pour les récepteurs hétérodynes spatiaux dédiés à l'astrophysique." Paris 11, 2009. http://www.theses.fr/2009PA112240.
The objective of this thesis is to design and integrate circuits mixers at 330GHz and 183GHz for heterodyne detection in astrophysics. These circuits are based on Schottky diodes, allowing operation at room temperature. The main point of the thesis is to develop a protocol for fabrication of submicron Schottky diodes and to integrate them in circuits mixers. These circuits are integrated in a test block and characterized in terms of RF performances. This thesis work may be used for circuits at higher frequencies, for both mixers and multipliers. A fabrication process entirely based on electron beam lithography has been developed, allowing the realization of Schottky diodes with submicronic anodes and improvement of their electrical characteristics. Many studies for specific optimization of the ohmic and schottky contacts have yielded to series resistances below 10Ω and to best ideality factors between 1,08 and 1,15. Two types of circuits have been made. One for operation at 330GHz composed of a pair of anti-parallel anodes on a 10μm membrane. The other, for a frequency of 183GHz, consists of a MMIC circuit including a pair of anti-parallel anodes on a 50μm membrane. One of the components to 330GHz has been integrated into a mixer bloc, its RF performances have been characterized. The preliminary result was encouraging with a noise temperature of 1800K for a conversion loss of 8dB
Debrie, Francis. "Élaboration d'une technologie auto-alignée par gravure plasma de métaux réfractaires pour transistors à effet de champ à hétérojonction (AlGaAs/GaAs)." Toulouse, INPT, 1986. http://www.theses.fr/1986INPT046H.
Gottwald, Frank-Hermann. "Rauschen von mm-Wellenmischern mit GaAs-Schottky-Dioden." [S.l. : s.n.], 1998. http://deposit.ddb.de/cgi-bin/dokserv?idn=955903629.
Chegroune, Kamel. "Réalisation et caractérisation de diodes Schotty submillimétriques métal-GaAs." Grenoble 2 : ANRT, 1986. http://catalogue.bnf.fr/ark:/12148/cb375966485.
Lindner, Thomas. "Organisch modifizierte Ag/GaAs-Schottky-Kontakte." [S.l. : s.n.], 2000. http://www.bsz-bw.de/cgi-bin/xvms.cgi?SWB10047762.
Sambell, Alistair John. "Modification of Schottky barriers on GaAs and other III-V semiconductors using a-Si:H interfacial layers." Thesis, University of York, 1991. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.280533.
Tang, Wing-man. "MISiC Schottky-diode hydrogen sensors with different gate insulators." Click to view the E-thesis via HKUTO, 2008. http://sunzi.lib.hku.hk/hkuto/record/B40987772.
Tang, Wing-man, and 鄧詠雯. "MISiC Schottky-diode hydrogen sensors with different gate insulators." Thesis, The University of Hong Kong (Pokfulam, Hong Kong), 2008. http://hub.hku.hk/bib/B40987772.
Chen, Gang, and 陈刚. "MIS Schottky-diode hydrogen sensors with different gate insulators or substrates." Thesis, The University of Hong Kong (Pokfulam, Hong Kong), 2012. http://hub.hku.hk/bib/B49799575.
published_or_final_version
Electrical and Electronic Engineering
Doctoral
Doctor of Philosophy
Mehdi, Hussein. "Etude de la passivation du GaAs(100) par nitruration par plasma N2 sous ultra-vide." Thesis, Université Clermont Auvergne (2017-2020), 2018. http://www.theses.fr/2018CLFAC063/document.
The surface passivation of III-V semiconductors is a suitable process to eliminate the side effects which disrupt the smooth operation of the optoelectronic devices. The aim of this thesis is to investigate passivation of the GaAs surface by nitridation using N2 plasma generated by two different sources: the GDS (Glow discharge source) and ECR (Electron Cyclotron Resonance). Our first study based on AR-XPS measurements, DFT simulations and a refined kinetic model permits identification of the three main steps of the nitriding process exhibiting several physical phenomena. Our second study of the GaAs passivation effects by growing a GaN thin layer on the surface makes it possible to optimize the experimental parameters of the nitriding process in order to tend towards optimal passivation. Firstly, the elaborated GaN layer structure is obtained by LEED patterns after their crystallization by an annealing at 620°C as well as the surface morphology obtained by SEM images. Then, chemical passivation of the nitrided GaAs layers is studied by AR-XPS measurements and the photoluminescence improvement of the GaAs substrate after nitridation is highlighted by µPL measurements. Finally, the nitridation process benefits electrical parameters of the Schottky diodes based on GaAs, optimizing them
Tang, Wing-man, and 鄧詠雯. "Development of high-quality gate insulators to improve the performanceof MISiC Schottky-diode hydrogen sensors." Thesis, The University of Hong Kong (Pokfulam, Hong Kong), 2004. http://hub.hku.hk/bib/B29736754.
Pasquali, Valerio. "Fabrication and measurement of strain-free GaAs/AlAs quantum dot devices." Thesis, Paris 6, 2017. http://www.theses.fr/2017PA066631.
In this thesis the formation of quantum dots (QD) via in-situ droplet nanohole etching, the fabrication and characterization of devices based on these nanostructures is described. The thesis consists of seven chapters. In the first chapter an introduction is given to present the topic to the reader. In the second chapter the experimental methods are presented. In the third chapter, the fabrication method is described and the experimental results obtained in this project are discussed. It will be shown the use of in-situ droplet etching to locally modify the thickness of a modulation doped quantum well, to create QDs embedded in a quantum well(QW) where a two dimensional electorn gas (2DEG) is confined by modulation doping and the embedding of these nanostructures in a n-i-Schottky diode. The effect of these strain-free dots, and the related nanoscale thickness fluctuations of the quantum well, on the 2DEG mobility are discussed in the fourth and in particular in the fifth chapter. In the sixth chapter, the fabrication of a lateral p-n junction based on the QW sample with embedded QD is presented. Following describing the fabrication stages and analysing the influence of each stage on the device, the optical properties of the junction will be discussed. In particular, it will be shown the electroluminescence of a single dot located at lateral the p-n junction. Finally, in the last chapter the conclusion of this work and the future projects are presented
Pasquali, Valerio. "Fabrication and measurement of strain-free GaAs/AlAs quantum dot devices." Electronic Thesis or Diss., Paris 6, 2017. http://www.theses.fr/2017PA066631.
In this thesis the formation of quantum dots (QD) via in-situ droplet nanohole etching, the fabrication and characterization of devices based on these nanostructures is described. The thesis consists of seven chapters. In the first chapter an introduction is given to present the topic to the reader. In the second chapter the experimental methods are presented. In the third chapter, the fabrication method is described and the experimental results obtained in this project are discussed. It will be shown the use of in-situ droplet etching to locally modify the thickness of a modulation doped quantum well, to create QDs embedded in a quantum well(QW) where a two dimensional electorn gas (2DEG) is confined by modulation doping and the embedding of these nanostructures in a n-i-Schottky diode. The effect of these strain-free dots, and the related nanoscale thickness fluctuations of the quantum well, on the 2DEG mobility are discussed in the fourth and in particular in the fifth chapter. In the sixth chapter, the fabrication of a lateral p-n junction based on the QW sample with embedded QD is presented. Following describing the fabrication stages and analysing the influence of each stage on the device, the optical properties of the junction will be discussed. In particular, it will be shown the electroluminescence of a single dot located at lateral the p-n junction. Finally, in the last chapter the conclusion of this work and the future projects are presented
Wang, Hui. "Conception et modélisation de circuits monolithiques à diode Schottky sur substrat GaAs aux longueurs d'onde millimétriques et submillimétriques pour des récepteurs hétérodynes multi-pixels embarqués sur satellites et dédiés à l'aéronomie ou la planétologie." Phd thesis, Observatoire de Paris, 2009. http://tel.archives-ouvertes.fr/tel-00608222.
Laurent, Sabine. "Orientation optique et relaxation du spin du trion dans les boîtes quantiques d'InAs/GaAs." Phd thesis, Université Pierre et Marie Curie - Paris VI, 2004. http://tel.archives-ouvertes.fr/tel-00007028.
Ullah, Md Barkat. "Growth of Zn-polar BeMgZnO/ZnO heterostructure with two dimensional electron gas (2DEG) and fabrication of silver Schottky diode on BeMgZnO/ZnO heterostructure." VCU Scholars Compass, 2017. http://scholarscompass.vcu.edu/etd/4992.
Polischuk, Vladimir. "Etude et réalisation de structure à base de silicium poreux en vue de la détection de gaz." Ecully, Ecole centrale de Lyon, 1999. http://www.theses.fr/1999ECDL0016.
Perng-Cherng, Wang, and 王鵬程. "Gamma-ray irradiation effects on Metal/GaAs Schottky diodes." Thesis, 1998. http://ndltd.ncl.edu.tw/handle/83444803238440843589.
中正理工學院
電機工程研究所
86
ABSTRACT Irradiation is known to damage semiconductor material by causing atomic displacement and/or ionization. The main effect of atomic displacement and ionization on semiconductor devices is the creation of recombination centers and, hence, the reduction of the minority-carrier lifetime. The type, size, and degree of damage or defect created depend on the energy, atomic mass, charge, fluence and dose of the incident species, and the temperature of the material during irradiation. In particular, The defect may be led to a complete device failure. Which may be operated in satellites or nuclear power plants, and will cause a safety related issue. The superior high-temperature and high-frequency properties of Gallium Arsenide than silicon make it ideal for space communication component or power plant component fabrications. Among them, metal/GaAs Schottky diode(SD) is the essential structure . In this study we investigate the variations of the electrical properties of Gamma rays irradiated Au,Al,Ag/GaAs SD. Interesting correlation between the irradiation and the electrical properties, have been observed.
Sithole, Enoch Mpho. "Electrical characterisation of Schottky barrier diodes fabricated on GaAs by electron beam metallisation." Diss., 2002. http://hdl.handle.net/2263/29753.
Dissertation (MSc (Physics))--University of Pretoria, 2006.
Physics
unrestricted
Tung, Chieng-Chi, and 董建圻. "Preparation and Ethanol Sensing Characteristics of Self-Assembled Monolayers Modified Au/GaAs Schottky Diodes." Thesis, 2008. http://ndltd.ncl.edu.tw/handle/75106537552180634472.
國立成功大學
化學工程學系碩博士班
96
In this work, a series of novel sensors based on the self-assembled organo-functionalized Au/GaAs Schottky diodes were fabricated for ethanol detection. Firstly, the contact angle, reflection absorption infrared spectroscope, and cyclic voltammetry techniques were used for the characterization of self-assembled monolayers (SAMs). The current-vcoltage (I-V) rectifying properties of SAMs functionalized devices were investigated. Moreover, the ethanol sensing performances of these devices were studied under various ethanol concentrations, temperatures and applied voltages. The dependences of ethanol sensing performances on the Au thickness, carbon numbers and terminal functional groups (e.g., –COOH、 –OH and –CH3) of SAMs were investigated. From experimental results, it revealed that, in the Au thickness ranging of 20-200 nm, the surface roughness of Au layer increased with decreasing the Au thickness, resulting in less adsorption amounts of SAMs on Au surface. For the carboxyl-terminated SAMs/Au, the hydrophilicity, order and stability were increased with increasing carbon numbers. Besides, the SAMs tended to produce more active sites. From the result of I-V rectifying properties, the current of SAMs modified Au/GaAs device increased with decreasing the Au thickness. From the results of ethanol detection, it indicated that as the carbon number increased from 3 to 6, the sensitivity of the studied devices were increased. Whereas, when the carbon number was above 6, the current was reduced owing to the decrease of induced electrostatic potential. In addition, as the aliphatics replaced by aromatics the device showed an enhancement in the ethanol sensitivity. It also found that the terminated functional group of SAMs played an important role on the sensing performance of device. The ethanol sensitivity decreased in the order as –COOH > –OH > –CH3. Under the ethanol concentrations of 1.95-4.55% EtOH/N2 and temperature of 298-308K, the sensitivity of device was increased with either increasing the ethanol concentration or decreasing the sensing temperature. In conclusion, among various preparation conditions, the Au/GaAs Schottky diodes modified by the carboxyl-terminated alkylthiol SAMs with a carbon number of 6 and with a Au thickness of 50 nm showed the best ethanol sensing performance.
Bing-JiaLin and 林秉頡. "Study on Nitrogen Oxides Sensors Based on Self-Assembled Alkanedithiol modified Au/GaAs Schottky Diodes." Thesis, 2010. http://ndltd.ncl.edu.tw/handle/40755028973888100846.
國立成功大學
化學工程學系碩博士班
98
In this work, novel nitrogen oxides gases sensors based on Au/GaAs Schottky diodes modified with alkanedithiol monolayers were fabricated and studied. At first, Au/GaAs Schottky diodes were fabricated, and then the Au electrode was modified with alkanedithiol monolayer by immersing the diode in an alkanedithiol/ethanol solution. Experimentally, effects of immersion time, concentration, and structure of alkanedithiol on the adsorption amount, stability, and hydrophobicity of monolayers were investigated by using cyclic voltammetry and contact angel analysis. Moreover, the sensing characteristics of the studied devices on nitrogen oxides were investigated under various gas concentrations and temperatures. From the result of immersion, the adsorption amounts of alkanedithiol were not only increased with increasing immersing time but also increased with increasing the concentration and carbon number (N) of alkanedithiol. When the alkanedithiol concentration was increased from 10 μm to 0.7 mM, the adsorption amount reached to a monomolecular saturation. As the immersion time approached to 36 hr, the adsorption reached to the equilibrium. Besides, the stability of structure and adsorption amounts of monolayer were increased with increasing carbon number of alkaneditiol in the N range of 3-10. From results of NO and NO2 sensing performances, the effect of structure of alkanedithiol played great important role on the sensitivity and electric property of the studied device. As the N value increased, the sensitivity of device was consistently increased, since the adsorption amount of monolayer was increased and the molecule architecture tended to self-ordered. As comparing sensing performances among devices modified with different terminal groups, i.e., –SH, -COOH, -OH, and -CH3, it was found that the device modified with alkanedithiol (terminal group: -SH) showed the highest sensitivity. This was inferred that -SH group could form thiolntirite or thiolnitrate by reacting with nitrogen oxide and nitrogen dioxide, respectively. Hence, high selectivity could be obtained, which would not be easily affected by the ambience. Furthermore, the sensitivity of the studied device was increased with increasing the concentration of nitrogen oxides in the range of 1-100ppm. However, the sensitivity was decreased as the operating temperature was increased. In conclusion, the Au/GaAs Schottky diodes modified with alkanedithiol monolayer had been successfully fabricated and could be served as nitrogen oxides sensors. Among various studied devices, 1,10-decanedithiol modified Au/GaAs device showed the best sensing characteristics on NO and NO2. The sensitivities of this device for sensing NO and NO2 were 35.3(100 ppm NO/N2) and 49.5(100 ppm NO2/N2), respectively, at 298 K.
LI, NIAN-YI, and 李念宜. "GaSb/GaAs heteroepitaxial growth by metal organic chemical vapor deposition and the study of schottky diodes." Thesis, 1990. http://ndltd.ncl.edu.tw/handle/47650524725474541941.
國立成功大學
電機工程研究所
78
GaSb-bascd化合物由於具有長波長光響應的特懷, 波長在1.24μm(AtGaSb) 至4.3μm (InCaAsSb)及8 至12μm(InAsSb/InSb量子井應力結構) 範圍內具有極低的傳輸損失 , 其電子與電洞移動率亦高於Inp 系列, 故極適合應用於光電元件的研究。本文係採 用有機金屬汽相沈積法成長銻化鎵(GaSb)同質, 祑質磊晶怪於銻化鎵及砷化鎵基板上 并建立最佳成長條件以做為InAs/GaSb高速元件、InGaSb/GaSb、GaAsSb/GaSb等超 晶格應力結構發展之基礎。 本實驗室自行建立的新MOCVD系統專以研究銻為主的Ⅲ-V 半導體材料, 并對量子井及 超晶格元件之制造上亦有初步的考量與設計, 以期成長高品質, 低背影濃度之磊晶層 。 首先對銻化鎵、砷化鎵基板之清潔步驟及銻化鎵磊晶膜的制程做了詳細的說明, 而后 探討在改變成長參數狀況下, 銻化鎵表面形成及光與電特性之變化。在所有成長條件 下, 銻化鎵晶膜為正型特性, 其在長速率隨〔TEG 〕莫耳分率線性的增加而與〔TMSb 〕菲耳分率無關, 對成長溫度更是密切地相關。〔TMSb〕/〔TEG〕比例在6∼8之間, 可得到鏡似無缺隱的表面, 但過大的莫耳分率將會嚴重地影響到晶膜之品質。 在金屬/銻化鎵蕭基二極體方面, 吾人由不同金屬測量其電流—電壓特性發現不同方 向的銻化鎵基板, 基位障(barrier height)被不同的表面能態(surface states)所箝 住。由於(111)銻化鎵比(100)銻化鎵基板擁有較多的dangling bonds, 而此懸浮的鍵 結容易造成載子的陷阱, 進而箝住金屬與銻化鎵間的能障, 使得吾人難以得到高位障 的蕭基二極體。在熱穩定特性探討中, 吾人發現把/銻化鎵接觸在高溫時(450℃) 易 形成Ga Pd 復合物而將蕭基二極體能障降低形成歐姆接觸, 故利用有限反應(limit r eaction)的觀念研制雙層金/鈀/銻化鎵蕭基二極體, 發現在450 ℃30分鐘退火下, 依然擁有良好的蕭基特性。
Your, Chih-Kaun, and 游智寬. "Deep Level Transient Spectroscopy of Schottky Diode on GaAsP." Thesis, 1995. http://ndltd.ncl.edu.tw/handle/58339227180210308477.
國立交通大學
電子物理學系
83
GaAs1-XPX III-V compound alloys is still the primary material for light-emitting diodes(LEDS) fabrication. The existence of deep level impurities reduces their luminescence efficiency. Therefore, it's important to improve the quality of the alloys for device and display applications. In this research ,deep level transient spectroscopy (DLTS) was used to determine the deep level traps. In all the studied,there are two electron traps found ,labeled E1&E2. E1 is a bulk defect and has an activation energy Ea=0.12±0.03eV. According to the depth profile, E1 possibly resulted from Te and native defect. E2 is a surface defect and can be found only near the interface between the metal and the semiconductor.This surface defect can be reduced and change structure by high temperature annealing. Samples grown at different temperatures have also been measured and carrier recombination rate was found inversely proportional to the LED output power.
Gottwald, Frank-Hermann [Verfasser]. "Rauschen von mm-Wellenmischern mit GaAs-Schottky-Dioden / von Frank-Hermann Gottwald." 1998. http://d-nb.info/955903629/34.
Cheng, Chin-Chuan, and 鄭錦泉. "Investigation of GaAs-AlGaAs Based Schottky Diode- and Transistor-Type Hydrogen Sensors." Thesis, 2005. http://ndltd.ncl.edu.tw/handle/32476678792611833350.
國立成功大學
微電子工程研究所碩博士班
93
The sensitive hydrogen detection of a field effect transistor, based on the gas-induced work function change at a specific gas-sensitive layer, was first presented in 1975. Today, the development of sensors is focused on new devices and materials with provide improved sensitivity, selectivity and stability. In this dissertation, some hydrogen-sensing GaAs-AlGaAs -based devices including Schottky diode and high electron mobility transistor (HEMT) are fabricated and studied. These studied devices are operated and measured under different hydrogen concentrations and different temperature. First, in order to study the influence of Fermi-level pinning effect on hydrogen sensing properties, the Pt/AlGaAs MOS and MS Schottky diodes hydrogen sensors are fabricated and systemically studied. From experimental results, it is known that the MOS-type hydrogen sensor exhibits higher hydrogen detecting sensitivity and shorter hydrogen response time than those of MS-type hydrogen sensor. Second, a novel hydrogen sensor based on a Pt/oxide/AlGaAs/InGaAs/GaAs HEMT is fabricated and demonstrated. In order to understand the hydrogen adsorption mechanism in the HEMT device, different measurement conditions are used. From experimental results, it is known that less hydrogen atoms can form dipolar at the interface between the Pt metal and oxide layer with increasing operation temperature. The comparison of different catalytic metals (Pd and Pt) in hydrogen sensing response is presented. From the experimental result, the HEMT hydrogen sensor based on the Pd/oxide/AlGaAs/InGaAs/GaAs exhibits higher response, especially under the hydrogen concentration is smaller than 100 ppm H2/air ambient. Finally, a HEMT hydrogen sensor based on a Pd/oxide/inGaP/AlGaAs/InGaAs/GaAs is fabricated and investigated. Due to larger energy bandgap of InGaP layer, the hydrogen-sensing characteristics are more stable when the operation temperature is larger than 1000C. The experimental results provide the promise for high-performance solid-state hydrogen sensor, optoelectronic integrated circuit (OEIC) and micro electro-mechanical system (MEMS) applications.
Lo, Shih-Pin, and 羅時斌. "Optimized ESD Protection Schottky Diode for GaAs pHEMT RF SPST Switch Application." Thesis, 2007. http://ndltd.ncl.edu.tw/handle/67207290589127645701.
國立中央大學
電機工程研究所
95
This thesis is about that proceeding with the research for the ESD protection ability to the Schottky diode layout parameter of GaAs. According to the result of ESD test, we can find that the gate periphery of the diode and HBM voltage can be direct proportion. While the gate width is 37.5 μm, gate length is 1.5 μm , the Gate Finger Number is 8, the voltage of the ESD test can be up to more than 1250 voltage for the HBM voltage. We also do the simulation and prove to the heat effect of the diode. To make optimized Schottky Diode of the GaAs be applied in the micro-wave switch of GaAs pHEMT. According to the result, the insertion loss is under 1.1dB, isolation is over 33 dB, power handling capability(P1dB)(OFF state) is above of 1W(30dBm), the area is 0.3-mm2. Through the ESD-HBM test at the same time, the ESD bearing ability reaches above 1000V.
Saini, Kamaljeet Singh. "A novel GaAs-quartz based approach towards larger band-width Schottky diode frequency multipliers /." 2003. http://wwwlib.umi.com/dissertations/fullcit/3062131.
Pan, Hsi-Jen, and 潘繫仁. "Investigation of GaAs- and InP-Based Heterojunction Bipolar Transistors and Schottky Diode Hydrogen Sensors." Thesis, 2001. http://ndltd.ncl.edu.tw/handle/20517581385455318918.
國立成功大學
電機工程學系
89
Heterojunction bipolar transistors (HBT’s) based on III-V compound semiconductor material systems have many prospects in digital and microwave applications due to the excellent high-speed performances combined with high current driving capability. In this dissertation, we present the HBT’s based on the GaAs- and InP-based material systems grown by low pressure-metal organic chemical vapor deposition (LP-MOCVD). We focus on the improved designs of conventional device structures, including the applications of InP/InGaAlAs material system used for the single HBT’s as well as the -doping related structure and the step graded layers used for the B-C junctions in the respective InGaP/GaAs and InP/InGaAs double HBT’s. The effects of different emitter, base and collector together with the emitter-base (E-B) and base-collector (B-C) junction structures on relevant DC characteristics are investigated on the basis of the theoretical calculations. On the other hand, the III-V compound semiconductor materials incorporated with palladium have been realized for the sensors with high sensitivity to hydrogen. In this dissertation, we also propose the hydrogen response, sensing mechanisms, and interface adsorption properties of the GaAs- and InP-based Schottky diode hydrogen sensors. The hydrogen adsorption behaviors are modeled by a theoretical simulation. The quaternary In0.53GaxAlyAs alloy lattice-matched to InP has an outstanding material property of variable band lineup and a wide tunable bandgap ranging depending on the alloy composition. For the aluminum composition of 0.22, the nearly continuous conduction band can be achieved between the InP emitter and the InGaAlAs base. This band lineup can effectively eliminate the undesired effects arising from the large potential spike at the E-B heterojunction such as the large offset voltage. Furthermore, to avoid poor quality related to high aluminum content, the InGaAlAs alloy with a bandgap of 0.93eV corresponding to the aluminum composition of 0.13 is chosen. The DC characteristics in contrast to the InP/InGaAs HBT’s including the higher breakdown voltage, lower output conductance, and better temperature stability are obtained particularly for the high-temperature operation. The superlattices structures incorporated into the InGaP/GaAs double HBT’s are the significant attempts to obtain the functional device characteristics and investigate the carrier transport mechanisms. The uniform and modulated widths of barriers are respectively utilized in the specific superlattice structures. The distinct electron transport of resonant tunneling through the miniband in superlattice structures can therefore be significantly dominated by the electric field behaviors across the barriers. Due to the insertion of the delta-doping related structure at the B-C heterojunction, the excellent transistor characteristics such as the low saturation voltage, low offset voltage, high breakdown voltage are obtained at low current regimes. Furthermore, at higher current regimes, the barrier width designs result in the double- and quaternary-negative difference resistance (NDR) phenomena in agreement with the theoretical prediction at 300K. By taking advantage of the effective mass filtering, the good hole confinement can be achieved by utilizing the tunneling barrier instead of the wide-gap emitter in the HBT’s. Furthermore, both the composite collector structures with the InGaAsP step-graded layers and an delta-doped InGaAs spacer can improve the current blocking effect. Due to less carrier multiplication, the step-graded junction DHBT has better breakdown characteristics and severe self-heating effect as compared to the employment of delta-doped InGaAs spacer. The high-frequency characteristics of the HBT’s with the techniques of self-aligned and no-self-aligned base contact are comparatively studied. The simulation and analysis of the delay times are performed based on the parasitic resistance and capacitance to find the influence on microwave characteristics. For the GaAs- and InP-based Pd metal-oxide-semiconductor (MOS) Schottky diodes, two main effects, i.e., the removal of Fermi-level pinning effect caused by the amphoteric native defects or the donor level in the oxide and the reduction of Pd metal work function dominate the hydrogen sensing mechanism. The reaction kinetics incorporating the water formation upon hydrogen adsorption is investigated to estimate the initial heat of adsorption. The interface coverage dependent heat of adsorption plays an important role in hydrogen response under steady-state conditions. From the experimental results and the theoretical prediction, both devices have a very high detection sensitivity and a wide sensing range under atmospheric conditions.
Liao, hsuan-I., and 廖軒逸. "Analyzing the Circuit Modal of InAs Quantum Dots in GaAs Schottky Diode Using Method of Bode Plot." Thesis, 2015. http://ndltd.ncl.edu.tw/handle/20490564873423766508.
國立交通大學
電子物理系所
103
We used three parameters, RS, RQD, and CS, to describe the characteristics of GaAs Schottky diode with 3.3 ML InAs quantum dots (QDs) at room temperature. And then, the QDs sample is applied on a low-pass filter, and the properties of sample can be probed using the method of Bode plot. We found that the frequency and gain of out-put signals for low-pass filter can be modulated by the three parameters: RS, RQD, and CS. The high-frequency gain is controlled by RS, and the low-frequency gain is controlled by RQD, and the pole and zero positions are controlled by CS. Besides, These parameters can be accurately determined using the analysis of Bode Plot under various applied bias. Furthermore, the properties of QDs under illumination can be also probed using the illuminated Bode Plot. According to the admittance-spectrum under illumination, the activation energy of QDs is reduced by light. Therefore, we found that the out-put gain and frequency are related to the activation energy of QDs.
Wang, Jia-Feng, and 王家峰. "The transient-measurement-analysis of the capacitor properities under illumination on GaAs Schottky diode with InAs quantum dots." Thesis, 2015. http://ndltd.ncl.edu.tw/handle/87875679246945172395.
國立交通大學
電子物理系所
103
In this study, the transient measurements of the GaAs Schottky diode with InAs quantum dots (QDs), or with GaAsN quantum well (QW), are investigated. The measured capacitance of GaAs Schottky diode can be modulated by the embedded QDs (QW) under illumination, this modulation for capacitance is attributed to the large potential drop (about 2V) caused by the charged QDs (QW). So we can show a significant capacitive property of QDs (QW) charged by photocurrent, and show that the generation of photocurrent is related to the EL2 defect and Ga vacancy in GaAs Schottky layer. According to the results above, the equivalent RC circuit modal of sample can be established, and the formula of several measurements (C-V, I-V, C-t, and I-t) are derived. The measured capacitance and current are determined by the relation between the charging time constant of QDs and the sweeping rate of applied bias. Besides, by analyzing the experiments of the QDs sample with strain-relaxation- induced misfit-defect, we also demonstrate that the defect around the QDs can improve the capacitive property. At last, we show that the GaAs Schottky diode is applied on the oscillator and on the signal-amplifier, and an optical-controlled IC circuit with Schottky diode is also demonstrated in this study.