Готові списки джерел за темами / GaAs Schottky diodes

Добірка наукової літератури з теми "GaAs Schottky diodes"

Автор: Grafiati
Опубліковано: 15 червня 2024

Оформте джерело за APA, MLA, Chicago, Harvard та іншими стилями

Оберіть тип джерела:

Ознайомтеся зі списками актуальних статей, книг, дисертацій, тез та інших наукових джерел на тему "GaAs Schottky diodes".

Біля кожної праці в переліку літератури доступна кнопка «Додати до бібліографії». Скористайтеся нею – і ми автоматично оформимо бібліографічне посилання на обрану працю в потрібному вам стилі цитування: APA, MLA, «Гарвард», «Чикаго», «Ванкувер» тощо.

Також ви можете завантажити повний текст наукової публікації у форматі «.pdf» та прочитати онлайн анотацію до роботи, якщо відповідні параметри наявні в метаданих.

Зміст

  1. Статті в журналах
  2. Дисертації
  3. Книги
  4. Частини книг
  5. Тези доповідей конференцій

Статті в журналах з теми "GaAs Schottky diodes":

1

Liu, Hai Rui, and Jun Sheng Yu. "Characterization of Metal-Semiconductor Schottky Diodes and Application on THz Detection." Advanced Materials Research 683 (April 2013): 729–32. http://dx.doi.org/10.4028/www.scientific.net/amr.683.729.

Повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
Анотація:
This paper presents a kind of air-bridged GaAs Schottky diodes which offer ultra low parasitic capacitance and series resistance in millimeter and THz wavelength. The Schottky barrier diodes have several advantages when used as millimeter wave and terahertz video, or power detectors. These include their fast time response, room temperature operation, simple structure and low cost. This paper describes the characterization of the metal-semiconductor Schottky diodes including principle, diode structure, non-linear voltage-current characteristic and signal-rectifying performance. For application, a quasi-optical THz detector was made by using the proposed Schottky diodes. It utilized a hyper hemispherical silicon lens to coupleand THz radiation to the diodes by integrating on a broadband planar bow-tie antenna. The measurement results of the Schottky diode based detector show a good room temperature performance.
2

Ozdemir, Ahmet Faruk, Adnan Calik, Guven Cankaya, Osman Sahin, and Nazim Ucar. "Effect of Indentation on I-V Characteristics of Au/n-GaAs Schottky Barrier Diodes." Zeitschrift für Naturforschung A 63, no. 3-4 (April 1, 2008): 199–202. http://dx.doi.org/10.1515/zna-2008-3-414.

Повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
Анотація:
Au/n-GaAs Schottky barrier diodes (SBDs) have been fabricated. The effect of indentation on Schottky diode parameters such as Schottky barrier height (φb) and ideality factor (n) was studied by current-voltage (I-V) measurements. The method used for indentation was the Vickers microhardness test at room temperature. The experimental results showed that the I-V characteristics move to lower currents due to an increase of φb with increasing indentation weight, while contacts showed a nonideal diode behaviour.
3

Weikle, Robert M., S. Nadri, C. M. Moore, N. D. Sauber, L. Xie, M. E. Cyberey, N. Scott Barker, A. W. Lichtenberger, and M. Zebarjadi. "Thermal Characterization of Quasi-Vertical GaAs Schottky Diodes Integrated on Silicon Using Thermoreflectance and Electrical Transient Measurements." Additional Conferences (Device Packaging, HiTEC, HiTEN, and CICMT) 2019, DPC (January 1, 2019): 001293–310. http://dx.doi.org/10.4071/2380-4491-2019-dpc-presentation_tha3_009.

Повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
Анотація:
Thermal management and design have been understood, for many years, as critical factors in the implementation of submillimeter-wave Schottky-diode-based circuits and instruments. Removal of heat is particularly important for frequency multipliers, as these circuits generally exhibit low-to-modest conversion efficiencies, and are usually driven with high-power sources to achieve usable output power in the submillimeter-wave region of the spectrum. Elevated diode junction temperature due to inadequate heat sinking is known to degrade performance, accelerate aging effects (for example, due to electromigration, ohmic contact deterioration, or thermally-induced stress), and can ultimately lead to device failure. The relatively-low thermal conductivity of GaAs (the predominant material technology for submillimeter-wave diodes), coupled with restrictions on diode anode size and geometry needed to minimize parasitics and achieve the device impedances required for high-frequency operation, present significant challenges and trade-offs between electrical and thermal designs of these devices. Recognition that heating is a major factor limiting efficiency and output power has prompted a number of approaches to mitigate excessive temperature rise in the junction of planar Schottky diodes, including the use of AlN or diamond as low-loss substrates that act as heat spreaders. A new diode topology, based on a quasi-vertical geometry that is realized through heterogeneous integration of GaAs with high-resistivity silicon, was recently developed at the University of Virginia for submillimeter-wave applications. Unlike planar diodes, the device structure of the quasi-vertical diode consists of a metal contact that underlies the diode's anode and epitaxial mesa, thus providing a large-area ohmic cathode contact that also serves as an integrated heat sink. Measurement of high-efficiency multipliers based on this technology suggest the quasi-vertical architecture provides an effective approach for heat removal and thermal management in Schottky diodes. This paper presents the first results reporting thermal performances of terahertz quasi-vertical GaAs Schottky diodes integrated on silicon. The devices are characterized using a thermoreflectance measurement technique, a method based on the change in refractive index, and therefore surface reflectivity, with changes in temperature. Heating and cooling temperature profiles and 2-D temperature maps are obtained for 3.5 micron and 5.5 micron diameter diodes. From these measurements, the device thermal resistances, junction temperatures, and thermal time-constants are extracted. Equivalent thermal circuit and finite element models are developed to study the device geometry, and extract material thermal parameters. The devices are also characterized using an electrical transient method, and the temperature and cooling transients found from this technique are found to be comparable to those obtained from thermoreflectance measurements. The quasi-vertical diodes studied in this work are shown to demonstrate a faster transient thermal response compared to flip-chip bonded terahertz diodes reported in the literature.
4

Klyuev, Alexey V., Arkady V. Yakimov, and Irene S. Zhukova. "1/f Noise in Ti–Au/n-Type GaAs Schottky Barrier Diodes." Fluctuation and Noise Letters 14, no. 03 (June 29, 2015): 1550029. http://dx.doi.org/10.1142/s0219477515500297.

Повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
Анотація:
We have studied the forward current–voltage (I–V) characteristics of Ti–Au /n-type GaAs Schottky barrier diodes. However, we found some anomalies in I–V characteristics. Hence, we have considered a model that incorporates thermionic emission, thermionic-field emission and leakage components. Leakage component is linear and visible at rather small currents. The anomalies observed in the diode parameters were effectively construed in terms of the contribution of these multiple charge transport mechanisms across the interface of the diodes. It is shown that thermionic-field emission and leakage are the sources of low-frequency (1/f) noise in such type of diodes. Various Schottky diode parameters were also extracted from the I–V characteristics and current dependence of spectrum of 1/f voltage noise.
5

Powell, J. R., Colin Viegas, Hoshiar Singh Sanghera, P. G. Huggard, and Byron Alderman. "Comparing Novel MMIC and Hybrid Circuit High Efficiency GaAs Schottky Diode mm-Wave Frequency Doublers." Electronics 9, no. 10 (October 19, 2020): 1718. http://dx.doi.org/10.3390/electronics9101718.

Повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
Анотація:
A novel Schottky diode frequency doubler in E-band, using biased series-connected diodes in the output waveguide, is reported. The doubler was implemented using a GaAs Schottky Monolithic Microwave Integrated Circuit (MMIC) process with integrated capacitors and beam leads. A comparison is made with a hybrid doubler using a more conventional single-ended configuration with two discrete diodes in a planar transmission line circuit. Both devices exhibit excellent performance over the 67–78 GHz design bandwidth, with the novel MMIC design producing 25 to 55 mW at 12 to 22% power conversion efficiency. Good agreement of measurements with simulations was also found.
6

Liu, Yang, Bo Zhang, Yinian Feng, Xiaolin Lv, Dongfeng Ji, Zhongqian Niu, Yilin Yang, Xiangyang Zhao, and Yong Fan. "Development of 340-GHz Transceiver Front End Based on GaAs Monolithic Integration Technology for THz Active Imaging Array." Applied Sciences 10, no. 21 (November 9, 2020): 7924. http://dx.doi.org/10.3390/app10217924.

Повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
Анотація:
Frequency multipliers and mixers based on Schottky barrier diodes (SBDs) are widely used in terahertz (THz) imaging applications. However, they still face obstacles, such as poor performance consistency caused by discrete flip-chip diodes, as well as low efficiency and large receiving noise temperature. It is very hard to meet the requirement of multiple channels in THz imaging array. In order to solve this problem, 12-μm-thick gallium arsenide (GaAs) monolithic integrated technology was adopted. In the process, the diode chip shared the same GaAs substrate with the transmission line, and the diode’s pads were seamlessly connected to the transmission line without using silver glue. A three-dimensional (3D) electromagnetic (EM) model of the diode chip was established in Ansys High Frequency Structure Simulator (HFSS) to accurately characterize the parasitic parameters. Based on the model, by quantitatively analyzing the influence of the surface channel width and the diode anode junction area on the best efficiency, the final parameters and dimensions of the diode were further optimized and determined. Finally, three 0.34 THz triplers and subharmonic mixers (SHMs) were manufactured, assembled, and measured for demonstration, all of which comprised a waveguide housing, a GaAs circuit integrated with diodes, and other external connectors. Experimental results show that all the triplers and SHMs had great performance consistency. Typically, when the input power was 100 mW, the output power of the THz tripler was greater than 1 mW in the frequency range of 324 GHz to 352 GHz, and a peak efficiency of 6.8% was achieved at 338 GHz. The THz SHM exhibited quite a low double sideband (DSB) noise temperature of 900~1500 K and a DSB conversion loss of 6.9~9 dB over the frequency range of 325~352 GHz. It is indicated that the GaAs monolithic integrated process, diodes modeling, and circuits simulation method in this paper provide an effective way to design THz frequency multiplier and mixer circuits.
7

KAHVECI, OSMAN, ABDULLAH AKKAYA, ENISE AYYILDIZ, and ABDÜLMECIT TÜRÜT. "COMPARISON OF THE Ti/n-GaAs SCHOTTKY CONTACTS’ PARAMETERS FABRICATED USING DC MAGNETRON SPUTTERING AND THERMAL EVAPORATION." Surface Review and Letters 24, no. 04 (August 10, 2016): 1750047. http://dx.doi.org/10.1142/s0218625x17500470.

Повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
Анотація:
We have fabricated the Ti/[Formula: see text]-type GaAs Schottky diodes (SDs) by the DC magnetron deposition and thermal evaporation, cut from the same GaAs substrates, and we have made a comparative study of the current–voltage ([Formula: see text]–[Formula: see text]) measurements of both SDs in the measurement temperature range of 160–300[Formula: see text]K with steps of 10[Formula: see text]K. The barrier height (BH) values of about 0.82 and 0.76[Formula: see text]eV at 300[Formula: see text]K have been obtained for the sputtered and evaporated SDs, respectively. It has been seen that the apparent BH value for the diodes has decreased with decreasing temperature obeying the single-Gaussian distribution (GD) for the evaporated diode and the double-GD for the sputtered diode over the whole measurement temperature range. The increment in BH and observed discrepancies in the sputtered diode have been attributed to the reduction in the native oxide layer present on the substrate surface by the high energy of the sputtered atoms and to sputtering-induced defects present in the near-surface region. We conclude that the thermal evaporation technique yields better quality Schottky contacts for use in electronic devices compared to the DC magnetron deposition technique.
8

YILDIRIM, N., H. DOGAN, H. KORKUT, and A. TURUT. "DEPENDENCE OF CHARACTERISTIC DIODE PARAMETERS IN Ni/n-GaAs CONTACTS ON THERMAL ANNEALING AND SAMPLE TEMPERATURE." International Journal of Modern Physics B 23, no. 27 (October 30, 2009): 5237–49. http://dx.doi.org/10.1142/s0217979209053564.

Повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
Анотація:
We have prepared the sputtered Ni /n- GaAs Schottky diodes which consist of as-deposited, and diodes annealed at 200 and 400°C for 2 min. The effect of thermal annealing on the temperature-dependent current–voltage (I–V) characteristics of the diodes has been experimentally investigated. Their I–V characteristics have been measured in the temperature range of 60–320 K with steps of 20 K. It has been seen that the barrier height (BH) slightly increased from 0.84 (as-deposited sample) to 0.88 eV at 300 K when the contact has been annealed at 400°C. The SBH increased whereas the ideality factor decreased with increasing annealing temperature for each sample temperature. The I–V measurements showed a dependence of ideality factor n and BH on the measuring temperature that cannot be explained by the classical thermionic emission theory. The experimental data are consistent with the presence of an inhomogeneity of the SBHs. Therefore, the temperature dependent I–V characteristics of the diodes have been discussed in terms of the multi-Gaussian distribution model. The experimental data good have agree with the fitting curves over whole measurement temperature range indicating that the SBH inhomogeneity of our as-deposited and annealed Ni /n- GaAs SBDs can be well-described by a double-Gaussian distribution. The slope of the nT versus T plot for the samples has approached to unity with increasing annealing temperature and becomes parallel to that of the ideal Schottky contact behavior for the 400°C annealed diode. Thus, it has been concluded that the thermal annealing process translates the metal-semiconductor contacts into thermally stable Schottky contacts.
9

Gromov, Dmitry, and Vadim Elesin. "Long-term radiation effects in GaAs microwave devices exposed to pulsed ionizing radiation." ITM Web of Conferences 30 (2019): 10005. http://dx.doi.org/10.1051/itmconf/20193010005.

Повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
Анотація:
The investigation results of the GaAs microwave devices characteristics under pulse irradiation are presented. The study covers the field effect transistor with Schottky barrier, pseudomorphic high-electron mobility transistors and resonant tunnelling diodes implemented in GaAs technology processes. It has been demonstrated that GaAs MESFET, pHEMT and RTDs may show the long-term parameter recovery undo pulsed ionizing exposure.
10

CROWE, THOMAS W., ROBERT J. MATTAUCH, ROBERT M. WEIKLE, and UDAYAN V. BHAPKAR. "TERAHERTZ GaAs DEVICES AND CIRCUITS FOR HETERODYNE RECEIVER APPLICATIONS." International Journal of High Speed Electronics and Systems 06, no. 01 (March 1995): 125–61. http://dx.doi.org/10.1142/s0129156495000043.

Повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
Анотація:
GaAs Schottky barrier diodes are used in heterodyne receiver applications to frequencies as high as 4,000 GHz. The primary application that has driven this technology has been radio astronomy. However, other applications are now also very important, particularly studies of the constituents of the Earth’s atmosphere. This paper presents a summary of this increasingly important technology. The requirements that the diodes must meet and the benefits of GaAs Schottky devices are discussed. The optimization of the diodes for frequency mixing and multiplication throughout the frequency range of interest is overviewed. The analysis of terahertz frequency electronic transport in the diodes is then briefly considered with an emphasis on numerical modeling techniques. The typical circuit designs and the efficient coupling of energy are considered, and the state-of-the-art systems are reviewed. Finally, ongoing and future research topics are discussed. It is concluded that although this technology is quite well developed, much remains to be done, particularly in the areas of combining accurate circuit and device simulations for optimization and design purposes and the development of lower cost systems.
Більше джерел
Також вас можуть зацікавити розширені добірки на тему "GaAs Schottky diodes" для конкретних типів джерел:
Статті в журналах Дисертації

Дисертації з теми "GaAs Schottky diodes":

1

Chegroune, Kamel. "Realisation et caracterisation de diodes schottky submillimetriques metal-gaas." Toulouse 3, 1986. http://www.theses.fr/1986TOU30166.

Повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
Анотація:
Le premier chapitre effectue la synthese des connaissances theoriques sur le fonctionnement des diodes en statique et en dynamique (ondes submillimetriques). Les mecanismes physiques regissant le comportement des diodes en haute frequence sont discutes. L'objet du deuxieme chapitre est la presentation des methodes mises en oeuvre pour realiser les composants (nettoyages, depot electrolytiques par courant pulse, microlithographie par faisceaux d'electrons). Le but est de diminuer la geometrie des diodes 0
2

Daboo, Cyrus. "Surface plasmon enhanced quantum efficiency of GaAs-Au Schottky diodes." Thesis, University of Cambridge, 1991. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.386416.

Повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
3

Elguennouni, Driss. "Réalisation d'un ensemble automatisé de mesures d'admittance : application à l'étude des diodes Schottky Al/GaAs et YSi1,7/Si." Grenoble 1, 1989. http://www.theses.fr/1989GRE10092.

Повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
Анотація:
La comprehension de la structure metal-semiconducteur fait l'objet de nombreuses etudes, depuis longtemps, tant sur le plan theorique qu'experimental. Le memoire presence l'etude de la diode schottky m/sc par mesure d'admittance principalement sous polarisation directe pour determiner et comparer les distributions d'etats d'interface obtenues pour quelque systeme typique. En particulier, les mesures d'admittances sont etendues ici pour la premiere fois jusqu'a 0,1 hz. Le travail est divise en trois parties: la premiere partie donne les principes et decrit les caracteristiques d'un ensemble automatise construit au cours de cette these permettant la mesure et l'admittance jusqu'a 0,1 hz (rc10##4); la deuxieme partie est une analyse theorique. D'une part, de l'effet des etats d'interface, sur la capacite et la conductance de la diode en fonction de la polarisation, la frequence et la temperature. D'autre part, des phenomenes de transport sous polarisation directe, en tenant compte des porteurs et majoritaires dans la zone quasineutre; la troisieme partie est la synthese des resultats experimentaux, mettant en evidence la variation des caracteristiques des etats d'interface en fonction du mode de preparation de la surface du semiconducteur avant le depot du metal, et expliquant le comportement inductif de la structure sous polarisation directe
4

Carton, Patrick. "Caractérisation de GaAs massif et contraste EBIC des dislocations." Lille 1, 1990. http://www.theses.fr/1990LIL10052.

Повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
Анотація:
Nous nous sommes intéressés au cours de cette étude aux propriétés de recombinaison des porteurs minoritaires sur les dislocations. L'étude du contraste EBIC de dislocations perpendiculaires à la surface, de caractère et de dislocations de croissance a été effectuée sur des échantillons massifs d'arséniure de gallium de type n (n6. 1016 cm3). Nous avons utilisé pour cela, des diodes de Schottky perpendiculaires au faisceau d'électrons. Le contraste EBIC a été mesuré à forte tension d'accélération en fonction du courant de faisceau des électrons incidents à 300 k et pour une valeur du courant de faisceau a 77 k. Les paramètres physiques du matériau tels la longueur de diffusion l des porteurs minoritaires et le niveau de dopage influencant la valeur du contraste de la dislocation, une caractérisation préalable de l'échantillon dans des zones proches des dislocations a été nécessaire. L'étude de l a 300 k et a 77 k a permis de montrer que celle-ci est contrôlée par les niveaux légers à basse température et par les niveaux profonds à température ambiante. Une variation de la largeur de la zone de charge d'espace a pu être détectée à basse température et est sans doute due à l'ionisation d'un centre profond qui pourrait être el2. Les résultats expérimentaux de contraste EBIC des dislocations sont du même ordre de grandeur que ceux calculés à partir d'un modèle physique faisant l'hypothèse d'une recombinaison intrinsèque. Les valeurs expérimentales sont environ deux fois plus faibles que les valeurs calculées; ceci nous conduit à introduire un rayon de recombinaison effectif inférieur au rayon d'écran de read utilise dans les calculs. Nous avons également pu mettre en évidence que les niveaux associés aux dislocations sont plus éloignés du niveau de fermi que les niveaux associés aux dislocations
5

Bouillaud, Hugo. "Fabrication et optimisation des caractéristiques thermiques de diodes Schottky de la filière GaAs et reportées sur SiHR pour des applications de multiplication de fréquences." Electronic Thesis or Diss., Université de Lille (2022-....), 2023. http://www.theses.fr/2023ULILN043.

Повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
Анотація:
Les besoins exponentiels liés aux applications exploitant le domaine THz nécessitent d'accroitre l'éventail des sources disponibles et d'optimiser leur fabrication. Dans ce travail de thèse, nous nous sommes intéressés aux diodes schottky en vue de la réalisation de multiplicateurs de fréquences. Notre travail de recherche expérimental a consisté en l'optimisation des caractéristiques de diodes schottky de filière GaAs, par le développement et la mise en œuvre d'un procédé de fabrication innovant. Dans un premier temps, nous avons réalisé des diodes schottky GaAs sur substrat GaAs de différentes tailles, pour élaborer des composants de référence. Nous avons ensuite fabriqué un composant de type flip-chip pour une application de multiplication à 150 GHz en boitier guide d'ondes. Enfin, dans le but d'améliorer les performances en puissance des diodes, nous avons optimisé leur dissipation thermique en transférant leur structure épitaxiale sur un substrat bénéficiant d'une meilleure conductivité thermique : le SiHR (silicium haute résistivité). Le procédé technologique complet de ces fabrications est détaillé, puis la dernière partie de l'étude est consacrée à leurs caractérisations. D'une part, nous avons évalué les éventuelles variations sur les caractéristiques des diodes GaAs sur GaAs, induites par les différentes tailles. D'autre part nous avons comparé les deux technologies sur les substrats SiHR et GaAs. Ce travail montre l'apport que peut présenter ce type de technologie reportée, où une diminution significative de la résistance thermique des composants est observée, et est associée à un gain notable sur la résistance série
The exponential needs associated with applications exploiting the THz domain require to expand the range of available sources and optimize their fabrication processes. In this thesis, we focused on schottky diodes for its use as frequency multipliers. Our experimental research involved optimizing the characteristics of GaAs schottky diodes through the development and implementation of an innovative fabrication process. First, we fabricated GaAs schottky diodes on GaAs substrate with several aspect ratios in order to make a reference in terms of device. Then we fabricated a flip-chip device for a 150 GHz frequency multiplication application in a waveguide block. Finally, in order to enhance the power handling of the diodes, we optimized their thermal dissipation by transferring their epitaxial structure onto a substrate with higher thermal conductivity : SiHR (high resistivity silicon). The complete technological processes for these fabrications are detailed, and the last part of the study is dedicated to their characterization. On one hand, we assessed any variations in the characteristics of GaAs diodes on GaAs induced by the different aspect ratios. On the other hand, we compared the two technologies on SiHR and GaAs substrates. This work demonstrates the potential of this type of transferred technology, where a significant reduction of thermal resistance is observed and is associated with a notable improvement of the series resistance
6

Haris, Norshakila. "Three-dimensional multilayer integration and characterisation of CPW MMIC components for future wireless communications." Thesis, University of Manchester, 2017. https://www.research.manchester.ac.uk/portal/en/theses/threedimensional-multilayer-integration-and-characterisation-of-cpw-mmic-components-for-future-wireless-communications(89ddea33-4de2-43ba-b8dc-dbc032b868e7).html.

Повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
Анотація:
The development of monolithic microwave integrated circuits (MMICs) has enabled the expansion of multiple circuit elements on a single piece of semiconductor, enclosed in a package with connecting leads. Attributable to the widespread use of wireless circuits and sub-systems, MMICs meet stringent demands for smaller chip area, low loss and low cost. These require highly integrated MMICs with compact features. This thesis provides valuable insight into the design of compact multifunctional MMICs using three-dimensional (3-D) multilayer technology. The proposed technology offers compact, hence low-cost solutions, where all active and passive components are fabricated vertically on the same substrate and no expensive via hole or backside processing is required. The substrate used in this work contains pre-fabricated 0.5 µm pseudomorphic High Electron Mobility Transistor (pHEMT) GaAs active devices. The performances of the uncommitted and committed pHEMTs are compared in terms of their DC, small-signal and large-signal RF measurements and modelling results. Committed pHEMT refers to the pHEMT that is connected to multilayer circuit, whereas uncommitted pHEMT is not. The effect of integrating committed pHEMTs with multilayer passive components is studied and the suitability of the multilayer fabrication processing is assessed. Using this technology, two pHEMT Schottky diodes with 120 µm and 200 µm gate widths are designed, fabricated and extensively characterised by I-V, C-V and S-parameter measurements. The information gained from the measurements is then used to extract all unknown equivalent circuit model parameters using high-frequency on-wafer microwave probing. The measured results showed good agreement with the modelled ones over the frequency range up to 40 GHz. Preliminary demonstrations of the use of these pHEMT Schottky diodes in microwave limiter and detector circuit applications are also discussed, showing promising results. Finally, the implementation of 3-D multilayer technology is shown for the first time in single-pole single-throw (SPST) and single-pole double-throw (SPDT) switches design by utilising the pre-fabricated pHEMTs. The design and analysis of the switches are demonstrated first through simulation using TriQuint's Own Model - Level 3 (TOM3). Three optimised SPST and SPDT pHEMT switching circuits which can address applications ranging from L to X bands are successfully fabricated and tested. The performance of the pHEMT switches is comparable to those of the current state-of-the-art, while simultaneously offering compact circuits with the advantages of integration with other MMIC components. All works reported in this thesis should facilitate foundry design engineers towards further development of 3-D multilayer technology.
7

Vildeuil, Jean-Charles. "Caractérisation et modélisation basse fréquence de transistors PHEMT AlGaAs/InGaAS/GaAs : bruits du canal, de la grille et corrélation." Montpellier 2, 2000. http://www.theses.fr/2000MON20151.

Повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
Анотація:
La realisation d'un oscillateur a haute purete spectrale passe obligatoirement par une phase de conception assistee par ordinateur afin de determiner la topologie optimale du circuit oscillateur en terme de bruit de phase. Le bruit de phase de l'oscillateur etant etroitement lie au bruit basse frequence du transistor utilise, ici des phemts (pseudomorphic high electron mobility transistors), il faut etudier le comportement en bruit de fond du composant. L'objet de ce travail est donc sur le plan pratique l'elaboration de schemas equivalents rendant compte du fonctionnement statique ou dynamique du transistor et prenant en compte les differentes sources de bruit basse frequence presentes dans le composant. Ces modeles seront ensuite utilises pour la simulation precise des oscillateurs concus. Apres une breve description des caracteristiques des oscillateurs, nous presentons dans ce memoire le principe de fonctionnement des transistors hemt et les phenomenes mis en jeu pour aboutir aux equations de conduction. A partir de ces equations, une methodologie de caracterisation a permis d'extraire l'ensemble des parametres electriques rendant compte de maniere satisfaisante du fonctionnement du composant. Les mesures experimentales relatives aux bruits de fond du drain et de l'electrode de commande ont egalement ete analysees dans le detail. Enfin, la fonction de coherence entre le bruit associe a la grille et celui associe au drain est etudiee. La simulation presentee permet de valider les schemas equivalents et les modeles proposes.
8

Jung, Cécile. "Conception et fabrication de circuits intégrés basés sur les nano-diodes Schottky GaAs fonctionnant aux fréquences THz et sub-THz pour les récepteurs hétérodynes spatiaux dédiés à l'astrophysique." Paris 11, 2009. http://www.theses.fr/2009PA112240.

Повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
Анотація:
L'objectif de ce travail de thèse est de concevoir et réaliser des circuits mélangeurs à 330GHz et à 183GHz pour la détection hétérodyne en astrophysique. Ces circuits sont basés sur les diodes Schottky, permettant ainsi un fonctionnement à température ambiante. Le thème principal de la thèse consiste à élaborer un protocole de fabrication de diodes Schottky submicroniques et à les intégrer dans des circuits mélangeurs. Ces circuits seront assemblés dans un bloc de test et caractérisés en termes de performances RF. Ce travail de thèse pourra être utilisé pour des circuits à plus hautes fréquences, aussi bien pour les mélangeurs que pour les multiplicateurs. Un processus de fabrication entièrement basé sur la lithographie électronique a été développé, permettant la réalisation de diodes Schottky ayant des anodes submicroniques et le perfectionnement de leurs caractéristiques électriques. De nombreuses études spécifiques d'optimisation de contact ohmique et de contact Schottky ont permis d'obtenir des résistances en séries inférieures à 10Ω et des meilleurs facteurs d'idéalité entre 1,08 et 1,15. Deux types de circuits ont été réalisés. L'un pour un fonctionnement à 330GHz composé d'une paire d'anodes anti-parallèles sur une membrane de 10μm. L'autre, pour une fréquence de fonctionnement à 183GHz, consiste en un circuit MMIC comprenant une paire d'anodes anti-parallèles sur une membrane de 50μm. Un des composants à 330GHz a été intégré dans un bloc mélangeur et ses performances RF ont été caractérisées. Le résultat préliminaire a été encourageant avec une température de bruit de 1800K pour une perte en conversion de 8dB
The objective of this thesis is to design and integrate circuits mixers at 330GHz and 183GHz for heterodyne detection in astrophysics. These circuits are based on Schottky diodes, allowing operation at room temperature. The main point of the thesis is to develop a protocol for fabrication of submicron Schottky diodes and to integrate them in circuits mixers. These circuits are integrated in a test block and characterized in terms of RF performances. This thesis work may be used for circuits at higher frequencies, for both mixers and multipliers. A fabrication process entirely based on electron beam lithography has been developed, allowing the realization of Schottky diodes with submicronic anodes and improvement of their electrical characteristics. Many studies for specific optimization of the ohmic and schottky contacts have yielded to series resistances below 10Ω and to best ideality factors between 1,08 and 1,15. Two types of circuits have been made. One for operation at 330GHz composed of a pair of anti-parallel anodes on a 10μm membrane. The other, for a frequency of 183GHz, consists of a MMIC circuit including a pair of anti-parallel anodes on a 50μm membrane. One of the components to 330GHz has been integrated into a mixer bloc, its RF performances have been characterized. The preliminary result was encouraging with a noise temperature of 1800K for a conversion loss of 8dB
9

Debrie, Francis. "Élaboration d'une technologie auto-alignée par gravure plasma de métaux réfractaires pour transistors à effet de champ à hétérojonction (AlGaAs/GaAs)." Toulouse, INPT, 1986. http://www.theses.fr/1986INPT046H.

Повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
Анотація:
L'auto-alignement est etudie depuis peu sur le tecfet (transistor a effet de champ a heterojonction algaas/gaas) par certains laboratoires etrangers. Le procede retenu dans les travaux de l'auteur fait appel a la gravure plasma de metaux refractaires et a un auto-alignement des metallisations de contacts ohmiques sur la grille. La gravure permet la realisation de grilles submicroniques en "t", par photolithographie optique, de matiere reproductible grace a un systeme de detection specialement etudie. Une technologie auto-alignee en 4 etapes a ete mise au point: isolement par mesa, grille en tiwsi, contacts ohmiques evapores en augeni/au, metallisation finale en tiptau. Les resultats obtenus sur mesfet sont comparables a ceux obtenus par d'autres laboratoires: gm=140ms/mm et idss=210ma/mm. Les premieres caracterisations en hyperfrequences permettent d'entrevoir des resultats prometteurs a terme: mag=6,9 et 4,7db; msg512,2 et 11,1db; facteur de stabilite k=1,85 et 2,32 avec une frequence maximale de 22ghz. Sur tegfet la technologie est plus delicate et les premiers resultats sont moins probants. La caracterisation sur plaquette 2 pouces donne typiquement: gm=80ms/mm, idss-64ma/mm et des tensions de claquage inferieures a -10v pour des courants inverses de -1ua. Ces resultats peuvent etre ameliores par la diminution des resistances de contact et de la longueur de grille. Des solutions sont envisagees et sont decrites
10

Gottwald, Frank-Hermann. "Rauschen von mm-Wellenmischern mit GaAs-Schottky-Dioden." [S.l. : s.n.], 1998. http://deposit.ddb.de/cgi-bin/dokserv?idn=955903629.

Повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
Більше джерел

Книги з теми "GaAs Schottky diodes":

1

Yu, Chen Liang, and United States. National Aeronautics and Space Administration., eds. SiC-based gas sensors. [Washington, D.C: National Aeronautics and Space Administration, 1997.

Знайти повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
2

Yu, Chen Liang, and United States. National Aeronautics and Space Administration., eds. Electronic and interfacial properties of Pd/6H-SiC Schottky diode gas sensors. [Washington, DC]: National Aeronautics and Space Administration, 1996.

Знайти повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
3

United States. National Aeronautics and Space Administration., ed. Final technical report on the development of a solid-state hydrogen sensor for rocket engine leakage detection. [Washington, DC: National Aeronautics and Space Administration, 1994.

Знайти повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.

Частини книг з теми "GaAs Schottky diodes":

1

Fischler, W., G. Zandler, and R. A. Höpfel. "Coherent THz Plasmons in GaAs Schottky Diodes." In Springer Series in Chemical Physics, 389–90. Berlin, Heidelberg: Springer Berlin Heidelberg, 1996. http://dx.doi.org/10.1007/978-3-642-80314-7_170.

Повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
2

Hackbarth, TH, H. Muessig, G. Jonsson, and H. Brugger. "MBE-Regrowth for Monolithic Integration of GaAs-Based Field-Effect Transistors and Schottky Diodes." In Low Dimensional Structures Prepared by Epitaxial Growth or Regrowth on Patterned Substrates, 345–55. Dordrecht: Springer Netherlands, 1995. http://dx.doi.org/10.1007/978-94-011-0341-1_32.

Повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
3

Dayal, S., S. Mahajan, D. S. Rawal, and B. K Sehgal. "Development of GaAs Hyperabrupt Schottky Varactor Diode using Ion-Implanted Active Layer on SI GaAs." In Physics of Semiconductor Devices, 137–39. Cham: Springer International Publishing, 2014. http://dx.doi.org/10.1007/978-3-319-03002-9_35.

Повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
4

Dyadyuk, Val, John W. Archer, and Leigh Stokes. "W-Band GaAs Schottky Diode MMIC Mixers for Multi-Gigabit Wireless Communications." In Advances in Broadband Communication and Networks, 73–101. New York: River Publishers, 2022. http://dx.doi.org/10.1201/9781003337089-4.

Повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
5

Chou, Yen I., Huey Ing Chen, and Chien Kang Hsiung. "Electroless Plated Pd/GaAs Schottky Diode and its Application to Hydrogen Detection." In Solid State Phenomena, 81–84. Stafa: Trans Tech Publications Ltd., 2007. http://dx.doi.org/10.4028/3-908451-31-0.81.

Повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
6

"On the electrical characteristics of high energy carbon irradiated Au/n-GaAs Schottky Barrier Diodes." In Compound Semiconductors 2001, 107–12. CRC Press, 2002. http://dx.doi.org/10.1201/9781482268980-21.

Повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
7

Hasegawa, Hideki, Ken-ichi Koyanagi, and Seiya Kasai. "Barrier Height Control and Current Transport in GaAs and InP Schottky Diodes Having An Ultrathin Silicon Interface Control Layer." In Control of Semiconductor Interfaces, 187–92. Elsevier, 1994. http://dx.doi.org/10.1016/b978-0-444-81889-8.50036-5.

Повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
8

Kavanag, Karen L., A. Alec Talin, Brent A. Morgan, R. Stanley Williams, and Ken Ring. "Comparison of the spatial variation in the barrier height of Si and GaAs Schottky diodes as measured by ballistic electron emission microscopy." In Control of Semiconductor Interfaces, 261–66. Elsevier, 1994. http://dx.doi.org/10.1016/b978-0-444-81889-8.50048-1.

Повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.

Тези доповідей конференцій з теми "GaAs Schottky diodes":

1

Maki, P. A., and D. J. Ehrlich. "In Situ Excimer Laser Irradiation of GaAs Surfaces During Schottky Barrier Formation*." In Microphysics of Surfaces, Beams, and Adsorbates. Washington, D.C.: Optica Publishing Group, 1987. http://dx.doi.org/10.1364/msba.1987.ma3.

Повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
Анотація:
Schottky barrier heights of all metals deposited on GaAs are largely controlled by the inherent Fermi level pinning at the surface which appears with even submonolayer coverages of metals or oxygen. The measured electrical characteristics of Schottky diodes will also depend upon the homogeneity of the surface at the time of metallization. Variations in the relative surface areas of oxides and clean surface will result in variations in apparent barrier height and diode ideality.
2

Pham, Q. P. "High reliability sputtered Schottky diodes on GaAs." In 15th International Conference on Infrared and Millimeter Waves. SPIE, 1990. http://dx.doi.org/10.1117/12.2301469.

Повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
3

Christianson, K. A. "Aging Effects in GaAs Schottky Barrier Diodes." In 27th International Reliability Physics Symposium. IEEE, 1989. http://dx.doi.org/10.1109/irps.1989.363363.

Повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
4

Ersland, Peter, and Shivarajiv Somisetty. "ESD Protection Capabilities of GaAs Schottky Diodes." In 2007 ROCS Workshop. IEEE, 2007. http://dx.doi.org/10.1109/rocs.2007.4391068.

Повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
5

Fischler, W., R. A. Höpfel, and G. Zandler. "Coherent THz plasmons in GaAs Schottky diodes." In International Conference on Ultrafast Phenomena. Washington, D.C.: Optica Publishing Group, 1996. http://dx.doi.org/10.1364/up.1996.wc.2.

Повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
Анотація:
The research on coherent collective excitations in solids has been pioneered by the observation of coherent phonons [1]. Femtosecond studies of plasma excitations in solids were reported by us on one of the previous meetings in this series [2]. Recently, excitation and detection of coherent plasma oscillations in solids became a new and exciting topic [3].
6

Wu, Yao, Xin Yan, Bang Li, Yanbin Luo, Qichao Lu, Xia Zhang, and Xiaomin Ren. "GaAs-Nanowire-Array/Graphene Schottky Diodes for Photodetection." In Asia Communications and Photonics Conference. Washington, D.C.: OSA, 2017. http://dx.doi.org/10.1364/acpc.2017.su4k.1.

Повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
7

Crowe, T. W. "GaAs Schottky diodes for mixing applications beyond 1THz." In 16th International Conference on Infrared and Millimeter Waves. SPIE, 1991. http://dx.doi.org/10.1117/12.2297948.

Повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
8

Laperashvili, Tina, Orest Kvitsiani, Ilia Imerlishvili, and David Laperashvili. "Terahertz pulse detection by the GaAs Schottky diodes." In SPIE Photonics Europe, edited by Benjamin J. Eggleton, Alexander L. Gaeta, and Neil G. R. Broderick. SPIE, 2010. http://dx.doi.org/10.1117/12.854048.

Повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
9

Tang, A. Y., V. Drakinskiy, P. Sobis, J. Vukusic, and J. Stake. "Modeling of GaAs Schottky diodes for terahertz application." In 2009 34th International Conference on Infrared, Millimeter, and Terahertz Waves (IORMMW-THz 2009). IEEE, 2009. http://dx.doi.org/10.1109/icimw.2009.5325563.

Повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
10

Oksanich, A. P., S. E. Pritchin, M. G. Kogdas, A. G. Kholod, and M. G. Dernova. "Pd/Porous GaAs in the Manufacture of Schottky Diodes." In 2019 IEEE International Conference on Modern Electrical and Energy Systems (MEES). IEEE, 2019. http://dx.doi.org/10.1109/mees.2019.8896603.

Повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.

До бібліографії