Статті в журналах з теми "Ga2O3 epitaxial growth and optoelectronic devices"
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Nelson, Erik C., Neville L. Dias, Kevin P. Bassett, Simon N. Dunham, Varun Verma, Masao Miyake, Pierre Wiltzius, et al. "Epitaxial growth of three-dimensionally architectured optoelectronic devices." Nature Materials 10, no. 9 (July 24, 2011): 676–81. http://dx.doi.org/10.1038/nmat3071.
Повний текст джерелаAn, Yuxin, Liyan Dai, Ying Wu, Biao Wu, Yanfei Zhao, Tong Liu, Hui Hao та ін. "Epitaxial growth of β-Ga2O3 thin films on Ga2O3 and Al2O3 substrates by using pulsed laser deposition". Journal of Advanced Dielectrics 09, № 04 (серпень 2019): 1950032. http://dx.doi.org/10.1142/s2010135x19500322.
Повний текст джерелаLu, Chao, Lei Gao, Fanqi Meng, Qinghua Zhang, Lihong Yang, Zeng Liu, Mingtong Zhu та ін. "Epitaxial growth of a β-Ga2O3 (−201)-oriented thin film on a threefold symmetrical SrTiO3 (111) substrate for heterogeneous integration". Journal of Applied Physics 133, № 4 (28 січня 2023): 045306. http://dx.doi.org/10.1063/5.0112175.
Повний текст джерелаGogova, Daniela, Misagh Ghezellou, Dat Q. Tran, Steffen Richter, Alexis Papamichail, Jawad ul Hassan, Axel R. Persson та ін. "Epitaxial growth of β-Ga2O3 by hot-wall MOCVD". AIP Advances 12, № 5 (1 травня 2022): 055022. http://dx.doi.org/10.1063/5.0087571.
Повний текст джерелаGuzilova, L. I., A. S. Grashchenko та V. I. Nikolaev. "THE STUDY OF MECHANICAL DEFORMATION RESISTANCE OF α-Ga2O3 EPITAXIAL LAYERS USING THE NANOINDENTATION TECHNIQUE". Frontier materials & technologies, № 4 (2021): 7–16. http://dx.doi.org/10.18323/2782-4039-2021-4-7-16.
Повний текст джерелаVescan, L., T. Stoica, M. Goryll, and K. Grimm. "Selective epitaxial growth of strained SiGe/Si for optoelectronic devices." Materials Science and Engineering: B 51, no. 1-3 (February 1998): 166–69. http://dx.doi.org/10.1016/s0921-5107(97)00253-5.
Повний текст джерелаZhao, Mei, Manman Liu, Youqing Dong, Chao Zou, Keqin Yang, Yun Yang, Lijie Zhang, and Shaoming Huang. "Epitaxial growth of two-dimensional SnSe2/MoS2 misfit heterostructures." Journal of Materials Chemistry C 4, no. 43 (2016): 10215–22. http://dx.doi.org/10.1039/c6tc03406c.
Повний текст джерелаTak, Bhera Ram, Ming-Min Yang, Marin Alexe та Rajendra Singh. "Deep-Level Traps Responsible for Persistent Photocurrent in Pulsed-Laser-Deposited β-Ga2O3 Thin Films". Crystals 11, № 9 (30 серпня 2021): 1046. http://dx.doi.org/10.3390/cryst11091046.
Повний текст джерелаHasan, Md Nazmul, Edward Swinnich, and Jung-Hun Seo. "Recent Progress in Gallium Oxide and Diamond Based High Power and High-Frequency Electronics." International Journal of High Speed Electronics and Systems 28, no. 01n02 (March 2019): 1940004. http://dx.doi.org/10.1142/s0129156419400044.
Повний текст джерелаSkipper, Alec M., Priyanka Petluru, Daniel J. Ironside, Ashlee M. García, Aaron J. Muhowski, Daniel Wasserman, and Seth R. Bank. "All-epitaxial, laterally structured plasmonic materials." Applied Physics Letters 120, no. 16 (April 18, 2022): 161103. http://dx.doi.org/10.1063/5.0094677.
Повний текст джерелаWang, Chao, David Barba, Haiguang Zhao, Xin Tong, Zhiming Wang, and Federico Rosei. "Epitaxial growth and defect repair of heterostructured CuInSexS2−x/CdSeS/CdS quantum dots." Nanoscale 11, no. 41 (2019): 19529–35. http://dx.doi.org/10.1039/c9nr06110j.
Повний текст джерелаKim, Kyoung-Ho, Minh-Tan Ha, Heesoo Lee, Minho Kim, Okhyun Nam, Yun-Ji Shin, Seong-Min Jeong, and Si-Young Bae. "Microstructural Gradational Properties of Sn-Doped Gallium Oxide Heteroepitaxial Layers Grown Using Mist Chemical Vapor Deposition." Materials 15, no. 3 (January 29, 2022): 1050. http://dx.doi.org/10.3390/ma15031050.
Повний текст джерелаTang, Wenbo, Yongjian Ma, Xiaodong Zhang, Xin Zhou, Li Zhang, Xuan Zhang, Tiwei Chen та ін. "High-quality (001) β-Ga2O3 homoepitaxial growth by metalorganic chemical vapor deposition enabled by in situ indium surfactant". Applied Physics Letters 120, № 21 (23 травня 2022): 212103. http://dx.doi.org/10.1063/5.0092754.
Повний текст джерелаYadav, Asha, Bo Fu, Stephanie Nicole Bonvicini, Linh Quy Ly, Zhitai Jia та Yujun Shi. "β-Ga2O3 Nanostructures: Chemical Vapor Deposition Growth Using Thermally Dewetted Au Nanoparticles as Catalyst and Characterization". Nanomaterials 12, № 15 (28 липня 2022): 2589. http://dx.doi.org/10.3390/nano12152589.
Повний текст джерелаWang, Xiaojie, Wenxiang Mu, Jiahui Xie, Jinteng Zhang, Yang Li, Zhitai Jia та Xutang Tao. "Rapid epitaxy of 2-inch and high-quality α-Ga2O3 films by mist-CVD method". Journal of Semiconductors 44, № 6 (1 червня 2023): 062803. http://dx.doi.org/10.1088/1674-4926/44/6/062803.
Повний текст джерелаChuai, Ya-Hui, Hong-Zhi Shen, Ya-Dan Li, Bing Hu, Yu Zhang, Chuan-Tao Zheng, and Yi-Ding Wang. "Epitaxial growth of highly infrared-transparent and conductive CuScO2 thin film by polymer-assisted-deposition method." RSC Advances 5, no. 61 (2015): 49301–7. http://dx.doi.org/10.1039/c5ra07743e.
Повний текст джерелаSun, Yuan Yuan, Xi He Zhang, Qiu Rui Jia, Zheng Li, and Shi Bo Liu. "Research on the Preparation Technology of GaN Ultraviolet Photoelectric Detector." Advanced Materials Research 717 (July 2013): 205–9. http://dx.doi.org/10.4028/www.scientific.net/amr.717.205.
Повний текст джерелаCheng, Lu, Yanlin Wu, Wenbin Zhong, Duanyang Chen, Hongji Qi та Wei Zheng. "Photophysics of β-Ga2O3: Phonon polaritons, exciton polaritons, free-carrier absorption, and band-edge absorption". Journal of Applied Physics 132, № 18 (14 листопада 2022): 185704. http://dx.doi.org/10.1063/5.0118843.
Повний текст джерелаBui, Quang Chieu, Ludovic Largeau, Martina Morassi, Nikoletta Jegenyes, Olivia Mauguin, Laurent Travers, Xavier Lafosse, et al. "GaN/Ga2O3 Core/Shell Nanowires Growth: Towards High Response Gas Sensors." Applied Sciences 9, no. 17 (August 28, 2019): 3528. http://dx.doi.org/10.3390/app9173528.
Повний текст джерелаMurakami, Masanori, Yasuo Koide, Miki Moriyama, and Susumu Tsukimoto. "Development of Electrode Materials for Semiconductor Devices." Materials Science Forum 475-479 (January 2005): 1705–14. http://dx.doi.org/10.4028/www.scientific.net/msf.475-479.1705.
Повний текст джерелаCirlin, G. E., R. R. Reznik, I. V. Shtrom, A. I. Khrebtov, Yu B. Samsonenko, S. A. Kukushkin, T. Kasama, and N. Akopian. "Hybrid GaAs/AlGaAs nanowire --- quantum dot system for single photon sources." Физика и техника полупроводников 52, no. 4 (2018): 469. http://dx.doi.org/10.21883/ftp.2018.04.45818.07.
Повний текст джерелаBatstone, J. L. "Structural and electronic properties of defects in semiconductors." Proceedings, annual meeting, Electron Microscopy Society of America 53 (August 13, 1995): 4–5. http://dx.doi.org/10.1017/s0424820100136398.
Повний текст джерелаFu, Wai Yuen, and Hoi Wai Choi. "Progress and prospects of III-nitride optoelectronic devices adopting lift-off processes." Journal of Applied Physics 132, no. 6 (August 14, 2022): 060903. http://dx.doi.org/10.1063/5.0089750.
Повний текст джерелаKang, T. W., S. H. Park, and T. W. Kim. "Improvement of the crystallinity of GaN epitaxial layers grown on porous Si (100) layers by using a two-step method." Journal of Materials Research 15, no. 12 (December 2000): 2602–5. http://dx.doi.org/10.1557/jmr.2000.0373.
Повний текст джерелаSpencer, Joseph A., Marko J. Tadjer, Alan G. Jacobs, Michael A. Mastro, John L. Lyons, Jaime A. Freitas, James C. Gallagher та ін. "Activation of implanted Si, Ge, and Sn donors in high-resistivity halide vapor phase epitaxial β-Ga2O3:N with high mobility". Applied Physics Letters 121, № 19 (7 листопада 2022): 192102. http://dx.doi.org/10.1063/5.0120494.
Повний текст джерелаChang, P. C., C. L. Yu, Y. W. Jahn, S. J. Chang, and K. H. Lee. "Effect of Growth Temperature on the Indium Incorporation in InGaN Epitaxial Films." Advanced Materials Research 287-290 (July 2011): 1456–59. http://dx.doi.org/10.4028/www.scientific.net/amr.287-290.1456.
Повний текст джерелаPark, Minseong, Byungjoon Bae, Taegeon Kim, Hyun S. Kum, and Kyusang Lee. "2D materials-assisted heterogeneous integration of semiconductor membranes toward functional devices." Journal of Applied Physics 132, no. 19 (November 21, 2022): 190902. http://dx.doi.org/10.1063/5.0122768.
Повний текст джерелаFu, Houqiang. "(Invited) III-Oxide/III-Nitride Heterostructures for Power Electronics and Optoelectronics Applications." ECS Meeting Abstracts MA2022-02, no. 34 (October 9, 2022): 1243. http://dx.doi.org/10.1149/ma2022-02341243mtgabs.
Повний текст джерелаLeung, Benjamin, Jie Song, Yu Zhang, Miao-Chan Tsai, Ge Yuan, and Jung Han. "Using the Evolutionary Selection Principle in Selective Area Growth to Achieve Single-Crystalline GaN on SiO2." International Journal of High Speed Electronics and Systems 23, no. 01n02 (March 2014): 1450003. http://dx.doi.org/10.1142/s0129156414500037.
Повний текст джерелаVescan, L. "Facet investigation in selective epitaxial growth of Si and SiGe on (001) Si for optoelectronic devices." Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 16, no. 3 (May 1998): 1549. http://dx.doi.org/10.1116/1.589937.
Повний текст джерелаKryzhanovskaya, Natalia V., Fedor I. Zubov, Eduard I. Moiseev, Anna S. Dragunova, Konstantin A. Ivanov, Mikhail V. Maximov, Nikolay A. Kaluzhnyy, et al. "On-chip light detection using integrated microdisk laser and photodetector bonded onto Si board." Laser Physics Letters 19, no. 1 (November 29, 2021): 016201. http://dx.doi.org/10.1088/1612-202x/ac3a0f.
Повний текст джерелаWang, Yifan, Xuanze Li, Pei Liu, Jing Xia, and Xiangmin Meng. "Epitaxial growth of CsPbBr3/PbS single-crystal film heterostructures for photodetection." Journal of Semiconductors 42, no. 11 (November 1, 2021): 112001. http://dx.doi.org/10.1088/1674-4926/42/11/112001.
Повний текст джерелаWang, Liu, Wenrui Zhang, Ningtao Liu, Tan Zhang, Zilong Wang, Simiao Wu, Zhaolin Zhan, and Jichun Ye. "Epitaxial Growth and Stoichiometry Control of Ultrawide Bandgap ZnGa2O4 Films by Pulsed Laser Deposition." Coatings 11, no. 7 (June 30, 2021): 782. http://dx.doi.org/10.3390/coatings11070782.
Повний текст джерелаTriplett, Mark, M. Saif Islam, and Dong Yu. "Scanning Photocurrent Microscopy of as-Grown Silicon Nanowire Metallurgical Junctions." MRS Proceedings 1551 (2013): 29–33. http://dx.doi.org/10.1557/opl.2013.991.
Повний текст джерелаYao, Zhonghui, Cheng Jiang, Xu Wang, Hongmei Chen, Hongpei Wang, Liang Qin, and Ziyang Zhang. "Recent Developments of Quantum Dot Materials for High Speed and Ultrafast Lasers." Nanomaterials 12, no. 7 (March 24, 2022): 1058. http://dx.doi.org/10.3390/nano12071058.
Повний текст джерелаBhattacharyya, Arkka, Carl Peterson, Takeki Itoh, Saurav Roy, Jacqueline Cooke, Steve Rebollo, Praneeth Ranga, Berardi Sensale-Rodriguez та Sriram Krishnamoorthy. "Enhancing the electron mobility in Si-doped (010) β-Ga2O3 films with low-temperature buffer layers". APL Materials 11, № 2 (1 лютого 2023): 021110. http://dx.doi.org/10.1063/5.0137666.
Повний текст джерелаIkenoue, Takumi, Satoshi Yoneya, Masao Miyake, and Tetsuji Hirato. "Epitaxial Growth and Bandgap Control of Ni1-xMgxO Thin Film Grown by Mist Chemical Vapor Deposition Method." MRS Advances 5, no. 31-32 (2020): 1705–12. http://dx.doi.org/10.1557/adv.2020.219.
Повний текст джерелаMachtay, N. D., and R. V. Kukta. "Energetics of Epitaxial Island Arrangements on Substrate Mesas." Journal of Applied Mechanics 73, no. 2 (May 14, 2005): 212–19. http://dx.doi.org/10.1115/1.2073327.
Повний текст джерелаVashishtha, Pargam, Pukhraj Prajapat, Lalit Goswami, Aditya Yadav, Akhilesh Pandey, and Govind Gupta. "Stress-Relaxed AlN-Buffer-Oriented GaN-Nano-Obelisks-Based High-Performance UV Photodetector." Electronic Materials 3, no. 4 (December 9, 2022): 357–67. http://dx.doi.org/10.3390/electronicmat3040029.
Повний текст джерелаAssali, S., S. Koelling, Z. Abboud, J. Nicolas, A. Attiaoui, and O. Moutanabbir. "500-period epitaxial Ge/Si0.18Ge0.82 multi-quantum wells on silicon." Journal of Applied Physics 132, no. 17 (November 7, 2022): 175304. http://dx.doi.org/10.1063/5.0119624.
Повний текст джерелаBrown, J. M., S. J. Pearton, R. Caruso, M. Stavola, K. T. Short, D. L. Malm, S. M. Vernon, and W. S. Hobson. "Transmission electron microscopy of epitaxial gallium arsenide grown on a variety of silicon substrates by metallorganic chemical vapor deposition." Proceedings, annual meeting, Electron Microscopy Society of America 45 (August 1987): 342–43. http://dx.doi.org/10.1017/s0424820100126500.
Повний текст джерелаYang, Duyoung, Byungsoo Kim, Tae Hoon Eom, Yongjo Park, and Ho Won Jang. "Epitaxial Growth of Alpha Gallium Oxide Thin Films on Sapphire Substrates for Electronic and Optoelectronic Devices: Progress and Perspective." Electronic Materials Letters 18, no. 2 (January 6, 2022): 113–28. http://dx.doi.org/10.1007/s13391-021-00333-5.
Повний текст джерелаXue, Xiaohuan, Jianjun Song, and Rongxi Xuan. "Finite Element Stress Model of Direct Band Gap Ge Implementation Method Compatible with Si Process." Advances in Condensed Matter Physics 2019 (September 16, 2019): 1–9. http://dx.doi.org/10.1155/2019/2096854.
Повний текст джерелаShea, B., Q. Sun-Paduano, D. F. Bliss, M. C. Callahan, and C. Sung. "Characterization of Gan/Sapphire Interface and the Buffer Layer by TEM/AFM." Microscopy and Microanalysis 7, S2 (August 2001): 330–31. http://dx.doi.org/10.1017/s1431927600027720.
Повний текст джерелаNakayama, Yasuo. "(Invited, Digital Presentation) Epitaxial Organic Molecular Interfaces As Well-Ordered Model Systems for Molecular Semiconductor p-n Junctions for Optoelectronic Applications." ECS Meeting Abstracts MA2022-01, no. 13 (July 7, 2022): 907. http://dx.doi.org/10.1149/ma2022-0113907mtgabs.
Повний текст джерелаXu, F. J., and B. Shen. "Progress in high crystalline quality AlN grown on sapphire for high-efficiency deep ultraviolet light-emitting diodes." Japanese Journal of Applied Physics 61, no. 4 (March 23, 2022): 040502. http://dx.doi.org/10.35848/1347-4065/ac3774.
Повний текст джерелаYao, Yu, Dandan Sang, Susu Duan, Qinglin Wang, and Cailong Liu. "Review on the Properties of Boron-Doped Diamond and One-Dimensional-Metal-Oxide Based P-N Heterojunction." Molecules 26, no. 1 (December 25, 2020): 71. http://dx.doi.org/10.3390/molecules26010071.
Повний текст джерелаJohnson, M. A. L., Zhonghai Yu, J. D. Brown, F. A. Koeck, N. A. El-Masry, H. S. Kong, J. A. Edmond, J. W. Cook, and J. F. Schetzina. "A Critical Comparison Between MOVPE and MBE Growth of III-V Nitride Semiconductor Materials for Opto-Electronic Device Applications." MRS Internet Journal of Nitride Semiconductor Research 4, S1 (1999): 594–99. http://dx.doi.org/10.1557/s1092578300003100.
Повний текст джерелаDietz, Nikolaus, and Klaus J. Bachmann. "Real-Time Monitoring of Epitaxial Processes by Parallel-Polarized Reflectance Spectroscopy." MRS Bulletin 20, no. 5 (May 1995): 49–55. http://dx.doi.org/10.1557/s0883769400044894.
Повний текст джерелаErmolaev, Georgy A., Marwa A. El-Sayed, Dmitry I. Yakubovsky, Kirill V. Voronin, Roman I. Romanov, Mikhail K. Tatmyshevskiy, Natalia V. Doroshina, et al. "Optical Constants and Structural Properties of Epitaxial MoS2 Monolayers." Nanomaterials 11, no. 6 (May 27, 2021): 1411. http://dx.doi.org/10.3390/nano11061411.
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