Готові списки джерел за темами / Ga2O3 epitaxial growth and optoelectronic devices

Добірка наукової літератури з теми "Ga2O3 epitaxial growth and optoelectronic devices"

Автор: Grafiati
Опубліковано: 6 вересня 2023

Оформте джерело за APA, MLA, Chicago, Harvard та іншими стилями

Оберіть тип джерела:

Зміст

Ознайомтеся зі списками актуальних статей, книг, дисертацій, тез та інших наукових джерел на тему "Ga2O3 epitaxial growth and optoelectronic devices".

Біля кожної праці в переліку літератури доступна кнопка «Додати до бібліографії». Скористайтеся нею – і ми автоматично оформимо бібліографічне посилання на обрану працю в потрібному вам стилі цитування: APA, MLA, «Гарвард», «Чикаго», «Ванкувер» тощо.

Також ви можете завантажити повний текст наукової публікації у форматі «.pdf» та прочитати онлайн анотацію до роботи, якщо відповідні параметри наявні в метаданих.

Статті в журналах з теми "Ga2O3 epitaxial growth and optoelectronic devices"

1

Nelson, Erik C., Neville L. Dias, Kevin P. Bassett, Simon N. Dunham, Varun Verma, Masao Miyake, Pierre Wiltzius, et al. "Epitaxial growth of three-dimensionally architectured optoelectronic devices." Nature Materials 10, no. 9 (July 24, 2011): 676–81. http://dx.doi.org/10.1038/nmat3071.

Повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
2

An, Yuxin, Liyan Dai, Ying Wu, Biao Wu, Yanfei Zhao, Tong Liu, Hui Hao та ін. "Epitaxial growth of β-Ga2O3 thin films on Ga2O3 and Al2O3 substrates by using pulsed laser deposition". Journal of Advanced Dielectrics 09, № 04 (серпень 2019): 1950032. http://dx.doi.org/10.1142/s2010135x19500322.

Повний текст джерела
Анотація:
In this work, we have successfully grown high quality epitaxial [Formula: see text]-Ga2O3 thin films on [Formula: see text]-Ga2O3 (100) and Al2O3(0001) substrates using pulsed laser deposition (PLD). By optimizing temperature and oxygen pressure, the best conditions were found to be 650–700∘C and 0.5[Formula: see text]Pa. To further improve the quality of hetero-epitaxial [Formula: see text]-Ga2O3, the sapphire substrates were pretreated for atomic terraced surface by chemical cleaning and high temperature annealing. From the optical transmittance measurements, the films grown at 600–750∘C exhibit a clear absorption edge at deep ultraviolet region around 250–275[Formula: see text]nm wavelength. High resolution transmission electron microscope (HRTEM) images and X-ray diffraction (XRD) patterns demonstrate that [Formula: see text]-Ga2O3(-201)//Al2O3(0001) epitaxial texture dominated the epitaxial oxide films on sapphire substrate, which opens up the possibilities of high power electric devices.
Стилі APA, Harvard, Vancouver, ISO та ін.
3

Lu, Chao, Lei Gao, Fanqi Meng, Qinghua Zhang, Lihong Yang, Zeng Liu, Mingtong Zhu та ін. "Epitaxial growth of a β-Ga2O3 (−201)-oriented thin film on a threefold symmetrical SrTiO3 (111) substrate for heterogeneous integration". Journal of Applied Physics 133, № 4 (28 січня 2023): 045306. http://dx.doi.org/10.1063/5.0112175.

Повний текст джерела
Анотація:
Epitaxial growth of a wide bandgap semiconductor β-Ga2O3 thin film with high crystal quality plays a decisive role in constructing optical and electronic devices. However, except for the native substrate, the scarcity of appropriate non-native substrates or the poor crystallization of the deposit in thin film growth severely limits the fabrication and applicability of the final heterostructures and devices. Here, by taking the consistent symmetry and closely matched atomic spacing between β-Ga2O3 (−201) and the cubic perovskite (111)-oriented plane of SrTiO3, we realize the epitaxial growth of single crystal β-Ga2O3 (−201) thin films on the SrTiO3 (111) substrate by the pulsed laser deposition method, as confirmed by wide-range reciprocal-space mapping and high-resolution scanning transmission electron microscopy. The fabricated β-Ga2O3 (−201) photodetector device on the SrTiO3 (111) substrate exhibits excellent ultraviolet optical detection performance with large on/off switching ratios and a fast response speed. Moreover, the β-Ga2O3/SrTiO3 (111) heterojunction shows type-II heterostructure characteristics for energy band alignment, which displays superior ability for electron–hole pairs separation with large conduction and small valance band offsets of 1.68 and 0.09 eV, respectively. The results offer us a new way to obtain high-quality β-Ga2O3 (−201) thin film heterostructures on cubic SrTiO3 (111) substrates and fabricate β-Ga2O3-based optical and electronic devices.
Стилі APA, Harvard, Vancouver, ISO та ін.
4

Gogova, Daniela, Misagh Ghezellou, Dat Q. Tran, Steffen Richter, Alexis Papamichail, Jawad ul Hassan, Axel R. Persson та ін. "Epitaxial growth of β-Ga2O3 by hot-wall MOCVD". AIP Advances 12, № 5 (1 травня 2022): 055022. http://dx.doi.org/10.1063/5.0087571.

Повний текст джерела
Анотація:
The hot-wall metalorganic chemical vapor deposition (MOCVD) concept, previously shown to enable superior material quality and high performance devices based on wide bandgap semiconductors, such as Ga(Al)N and SiC, has been applied to the epitaxial growth of β-Ga2O3. Epitaxial β-Ga2O3 layers at high growth rates (above 1 μm/h), at low reagent flows, and at reduced growth temperatures (740 °C) are demonstrated. A high crystalline quality epitaxial material on a c-plane sapphire substrate is attained as corroborated by a combination of x-ray diffraction, high-resolution scanning transmission electron microscopy, and spectroscopic ellipsometry measurements. The hot-wall MOCVD process is transferred to homoepitaxy, and single-crystalline homoepitaxial β-Ga2O3 layers are demonstrated with a [Formula: see text]01 rocking curve width of 118 arc sec, which is comparable to those of the edge-defined film-fed grown ([Formula: see text]01) β-Ga2O3 substrates, indicative of similar dislocation densities for epilayers and substrates. Hence, hot-wall MOCVD is proposed as a prospective growth method to be further explored for the fabrication of β-Ga2O3.
Стилі APA, Harvard, Vancouver, ISO та ін.
5

Guzilova, L. I., A. S. Grashchenko та V. I. Nikolaev. "THE STUDY OF MECHANICAL DEFORMATION RESISTANCE OF α-Ga2O3 EPITAXIAL LAYERS USING THE NANOINDENTATION TECHNIQUE". Frontier materials & technologies, № 4 (2021): 7–16. http://dx.doi.org/10.18323/2782-4039-2021-4-7-16.

Повний текст джерела
Анотація:
Gallium oxide (Ga2O3) is a wide-band semiconducting material with an energy gap width Eg=4.8–5.0 eV, high conductivity (λ~10.9–27.0 W/(m·K)), and radiation and chemical resistance. Its energy gap width and conductivity allow in the future using the material in the structures of power equipment and optoelectronic devices to increase their energy performance, i.e. to decrease heating and increase productive capacity. Radiation resistance, high breakdown field, and optical asymmetry of Ga2O3 make it attractive for application when designing UV-photoelectric receivers and space systems. The electrical and optical properties of Ga2O3 are amply studied, but there are no systematic data on its physical and mechanical properties (hardness, Young’s modulus, and crack resistance). The paper investigated the deformation in α-Ga2O3 epitaxial layers during nanoindentation. For indentation, the authors used NanoTest (Micro Materials Ltd.) hardness meter. The surface (0001) of α-Ga2O3 crystalline layers produced in the process of chloride gas epitaxy on sapphire (Al2O3) substrates with basic (0001) orientation was investigated. For the first time, the authors experimentally obtained the values of α-Ga2O3 hardness and Young’s modulus using the Oliver-Farr method. The dependences of the indentation load on the penetration depth demonstrated the deviation from linearity, including stress relaxation coming from the pop-in phenomenon. The average values of nanohardness H and Young’s modulus E were 17 and 281 GPa, respectively. The obtained H and E values demonstrate higher characteristics compared to the formerly studied β-Ga2O3 epitaxial layers. This discrepancy can be explained by the more close-packed arrangement of the α-Ga2O3 structure (the corundum type) than one of monoclinic β-Ga2O3. The study shows that α-Ga2O3 leaves the majority of semiconducting materials behind in its mechanical properties conceding only to gallium nitride (GaN) and sapphire (Al2O3)
Стилі APA, Harvard, Vancouver, ISO та ін.
6

Vescan, L., T. Stoica, M. Goryll, and K. Grimm. "Selective epitaxial growth of strained SiGe/Si for optoelectronic devices." Materials Science and Engineering: B 51, no. 1-3 (February 1998): 166–69. http://dx.doi.org/10.1016/s0921-5107(97)00253-5.

Повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
7

Zhao, Mei, Manman Liu, Youqing Dong, Chao Zou, Keqin Yang, Yun Yang, Lijie Zhang, and Shaoming Huang. "Epitaxial growth of two-dimensional SnSe2/MoS2 misfit heterostructures." Journal of Materials Chemistry C 4, no. 43 (2016): 10215–22. http://dx.doi.org/10.1039/c6tc03406c.

Повний текст джерела
Анотація:
van der Waals (vdWs) heterostructures, obtained by vertically stacking two-dimensional layered materials upon each other, appear particularly promising for future atomically thin electronic and optoelectronic devices and attract a great deal of attention due to their diverse functionalities.
Стилі APA, Harvard, Vancouver, ISO та ін.
8

Tak, Bhera Ram, Ming-Min Yang, Marin Alexe та Rajendra Singh. "Deep-Level Traps Responsible for Persistent Photocurrent in Pulsed-Laser-Deposited β-Ga2O3 Thin Films". Crystals 11, № 9 (30 серпня 2021): 1046. http://dx.doi.org/10.3390/cryst11091046.

Повний текст джерела
Анотація:
Gallium oxide (β-Ga2O3) is emerging as a promising wide-bandgap semiconductor for optoelectronic and high-power electronic devices. In this study, deep-level defects were investigated in pulsed-laser-deposited epitaxial films of β-Ga2O3. A deep ultraviolet photodetector (DUV) fabricated on β-Ga2O3 film showed a slow decay time of 1.58 s after switching off 250 nm wavelength illumination. Generally, β-Ga2O3 possesses various intentional and unintentional trap levels. Herein, these traps were investigated using the fractional emptying thermally stimulated current (TSC) method in the temperature range of 85 to 473 K. Broad peaks in the net TSC curve were observed and further resolved to identify the characteristic peak temperature of individual traps using the fractional emptying method. Several deep-level traps having activation energies in the range of 0.16 to 1.03 eV were identified. Among them, the trap with activation energy of 1.03 eV was found to be the most dominant trap level and it was possibly responsible for the persistent photocurrent in PLD-grown β-Ga2O3 thin films. The findings of this current work could pave the way for fabrication of high-performance DUV photodetectors.
Стилі APA, Harvard, Vancouver, ISO та ін.
9

Hasan, Md Nazmul, Edward Swinnich, and Jung-Hun Seo. "Recent Progress in Gallium Oxide and Diamond Based High Power and High-Frequency Electronics." International Journal of High Speed Electronics and Systems 28, no. 01n02 (March 2019): 1940004. http://dx.doi.org/10.1142/s0129156419400044.

Повний текст джерела
Анотація:
In recent years, the emergence of the ultrawide‐bandgap (UWBG) semiconductor materials that have an extremely large bandgap, exceeding 5eV including AlGaN/AlN, diamond, β-Ga2O3, and cubic BN, provides a new opportunity in myriad applications in electronic, optoelectronic and photonics with superior performance matrix than conventional WBG materials. In this review paper, we will focus on high power and high frequency devices based on two most promising UWBG semiconductors, β-Ga2O3 and diamond among various UWBG semiconductor devices. These two UWBG semiconductors have gained substantial attention in recent years due to breakthroughs in their growth technique as well as various device engineering efforts. Therefore, we will review recent advances in high power and high frequency devices based on β-Ga2O3 and diamond in terms of device performance metrics such as breakdown voltage, power gain, cut off frequency and maximum operating frequency.
Стилі APA, Harvard, Vancouver, ISO та ін.
10

Skipper, Alec M., Priyanka Petluru, Daniel J. Ironside, Ashlee M. García, Aaron J. Muhowski, Daniel Wasserman, and Seth R. Bank. "All-epitaxial, laterally structured plasmonic materials." Applied Physics Letters 120, no. 16 (April 18, 2022): 161103. http://dx.doi.org/10.1063/5.0094677.

Повний текст джерела
Анотація:
Optoelectronic devices in the mid-infrared have attracted significant interest due to numerous potential applications in communications and sensing. Molecular beam epitaxial (MBE) growth of highly doped InAs has emerged as a promising “designer metal” platform for the plasmonic enhancement of mid-infrared devices. However, while typical plasmonic materials can be patterned to engineer strong localized resonances, the lack of lateral control in conventional MBE growth makes it challenging to create similar structures compatible with monolithically grown plasmonic InAs. To this end, we report the growth of highly doped InAs plasmonic ridges for the localized resonant enhancement of mid-IR emitters and absorbers. Furthermore, we demonstrate a method for regaining a planar surface above plasmonic corrugations, creating a pathway to epitaxially integrate these structures into active devices that leverage conventional growth and fabrication techniques.
Стилі APA, Harvard, Vancouver, ISO та ін.
Більше джерел

Дисертації з теми "Ga2O3 epitaxial growth and optoelectronic devices"

1

Fisher, Martin John. "Epitaxial growth and characterisation of heterojunction and homojunction LEDs with InAs active regions." Thesis, Lancaster University, 1998. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.268062.

Повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
2

Wagner, Brent K. "Molecular beam epitaxial growth of CdTe and HgCdTe for new infrared and optoelectronic devices." Diss., Georgia Institute of Technology, 1991. http://hdl.handle.net/1853/13701.

Повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
3

Abid, Mohamed. "Design and epitaxial growth of vertical cavity surface-emitting lasers (VCSEL) emitting at ultraviolet wavelength." Diss., Georgia Institute of Technology, 2013. http://hdl.handle.net/1853/47682.

Повний текст джерела
Анотація:
One of the key advances in photonic technology in recent decades was the development of a new type of diode lasers emitting in the visible and infrared region. These vertical cavity surface-emitting lasers (VCSELs) emerged from a laboratory curiosity in 1977 [13] to an object of industrial mass production [14] and are currently used in many applications. The applications include communication, printing, and absorption spectroscopy [15]. Their rise in credibility has largely been motivated by the rapid evolution of their performance, the more sweeping recognition of their compatibility with low-cost wafer-scale fabrication, and their possible formation into specific arrays with no change in the fabrication procedure. Various applications such as advanced chemical sensors and high-density optical storage require coherent and small-size ultraviolet-emitting devices (below 400nm). Therefore, to extend the VCSEL emission to the ultraviolet (UV) region, intensive efforts have been made in the VCSEL technology. However, the achievement of such UV VCSEL is very challenging because of the various limitations and issues. The issues noticeably include the carrier injection, optical confinement, and highly reflective distributed Bragg reflectors (DBR) structures with a broad bandwidth operating in the UV region [16]. In this context, motivated by the reported large refractive index induced by boron incorporation [7], we propose to introduce the boron-based material systems (BAlGaN) as an innovative solution to address some of the encountered difficulties. The objective of the proposed research is to investigate and optimize new wide-bandgap BAlGaN material systems and illustrate their incorporation into the building blocks of vertical cavity surface-emitting laser structures for operation in the UV spectral range (<400nm). Toward this goal, we have focused our research activities in three main directions. The first direction is devoted to the simulation of DBRs reflectivity by taking into consideration the experimental refractive indexes. Once the materials needed in the different components of the VCSEL are well defined, the second direction lies in the achievement of growth conditions optimization and characterization of the new wide-bandgap BAlGaN material systems. The study has led to the structural and morphological quality improvement of (B,Al,Ga)N materials. Unique optical properties of the BGaN and BAlN materials were also demonstrated. Upon demonstrating the materials' promising optical characteristics, the final direction consists of the epitaxial growth and characterization of the highly reflective DBRs and active region of the UV VCSEL structure.
Стилі APA, Harvard, Vancouver, ISO та ін.
4

Choi, Suk. "Growth and characterization of III-nitride materials for high efficiency optoelectronic devices by metalorganic chemical vapor deposition." Diss., Georgia Institute of Technology, 2012. http://hdl.handle.net/1853/45823.

Повний текст джерела
Анотація:
Efficiency droop is a critical issue for the Group III-nitride based light-emitting diodes (LEDs) to be competitive in the general lighting application. Carrier spill-over have been suggested as an origin of the efficiency droop, and an InAlN electron-blocking layer (EBL) is suggested as a replacement of the conventional AlGaN EBL for improved performance of LED. Optimum growth condition of InAlN layer was developed, and high quality InAlN layer was grown by using metalorganic chemical vapor deposition (MOCVD). A LED structure employing an InAlN EBL was grown and its efficiency droop performance was compared with a LED with an AlGaN EBL. Characterization results suggested that the InAlN EBL delivers more effective electron blocking over AlGaN EBL. Hole-injection performance of the InAlN EBL was examined by growing and testing a series of LEDs with different InAlN EBL thickness. Analysis results by using extended quantum efficiency model shows that further improvement in the performance of LED requires better hole-injection performance of the InAlN EBL. Advanced EBL structures such as strain-engineered InAlN EBL and compositionally-graded InAlN EBLs for the delivery of higher hole-injection efficiency were also grown and tested.
Стилі APA, Harvard, Vancouver, ISO та ін.
5

Muazzam, Usman Ul. "Investigation of Growth, Structural and Optical properties of different phases of Ga2O3." Thesis, 2023. https://etd.iisc.ac.in/handle/2005/6127.

Повний текст джерела
Анотація:
Among the semiconducting sesquioxides, Ga2O3 has attracted considerable research attention in recent years due to its excellent properties, including direct ultra wide band gap, optical transparency, high excitonic binding energy. These properties makes it a potential candidate for deep UV optoelectronics and power electronics applications. The Ga2O3 exhibits polymorphism which includes at least α-, β-, γ- and ϵ-/κ- phases. Among these phases most of the research has been carried out on thermodynamically stable β-polyphase, whose highly asymmetric crystal structure imparts highly non-isotropic optical and electronic properties. Aside from the fact that β-(AlxGa1–x)2O3 alloy is limited to an Aluminium mole fraction of 71 % thereby impeding the bandgap tuning, its non-polar crystal symmetry pose some challenges or would add additional steps to the device development process. These factor make it imperative to investigate other meta-stable polymorphs. There is a critical need for cost-effective and high-throughput methods for the deposition of semiconducting thin films in a wide range of industrial applications. In this research work optical and structural properties of metastable phases of Ga2O3 have been investigated which were deposited using cost-effective, easy to use and high-throughput techniques. In particular, an approach involving microwave-irradiation was employed to deposit polycrystalline thin films at sub 200 oC temperatures, and mist-CVD method was developed to achieve epitaxial thin films of high crystallinity at atmospheric pressure. The work begins by understanding the structural properties and optical reponse of the cubic spinel γ-Ga2O3. The polycrystalline film was deposited on the sapphire substrate at various microwave powers, following which the sample deposited at 300 W microwave power was annealed and a comparative study vis-` a-vis the optical and structural properties was done on annealed and as-deposited sample. A planar geometry MSM photodetector was fabricated with decent response. Finally, the carrier transport mechanism was investigated by analyzing temperature dependent I-V curves with Thermionic emission models at low electric field and hopping conduction mechanism at high electric field regime. The outcomes of the investigation renders microwave as the method of choice for deposition of conformal, high quality polycrystalline optical films. These results persuaded us to deposit Ga2O3 poly-film on GaN/AlGaN-HEMT stack for the realization of dual-band/broadband photodetector. In the final section of this part, nanocrystalline (In0.26Ga0.74)2O3 film was realized, and its defect span was studied using Urbach’s rule. This film demonstrated the high responsivity of ∼ 17 WA . In general, microwave irradiation is suitable for the fabrication of highly conformal polycrystalline thin film; however, deposition of epitaxial thin films present a great challenge. Low-defect epitaxial films are imperative for manufacturing highly efficient photodetectors, sensors, transistors and diodes. In addition, they make it possible to observe specific optical excitations, such as free excitons. A polycrystalline film could assist in converting free excitons into trapped excitons, thus hindering our ability to observe the existence of free excitons in the film. Nevertheless, one could detect these free excitons in poly films at cryogenic temperatures. To address these issues, this stage of the research involves building a hot-walled mist-CVD reactor and deciphering its underlying growth mechanism. The highly epitaxial α-Ga2O3 film was stabilized at a relatively lower temperature of 350 oC. The crystallinity of the films were studied using series of rocking curve scans and pole figure measurements. Through the application of Elliott-Toyozawa theory, optical charcterization of the film with emphasis on excitonic properties was conducted. Eventually, an MSM photodetector was fabricated on the film deposited at 450 oC and its optical response was studied. This is the first time excitonic fingerprint has been observed in spectral responsivity measurements. While hot-walled mist-CVD reactors are quite capable of depositing α-Ga2O3 films, they suffer from specific growth-related issues. The film deposition rates are slow in conjunction with high thickness variability over the substrate. Furthermore, a large tube diameter promotes homogeneous nucleation, facilitating germination of high-density denuded regions. Considering these factors when depositing films conducive to high-quality devices is essential. As a method of alleviating the problems mentioned above, a fine channel mist-CVD (FCM) reactor was developed. This reactor was employed to deposit κ-Ga2O3 film with high crystallinity of ∼ 104 arcsec FWHM of on-axis Rocking Curve (RC); the dilemma about its crystal structure was resolved with the help of diffraction simulation coupled with a pole figure scan of the uncommon pole germane to orthorhombic symmetry. Ultimately, an MSM device was fabricated on the κ- phase and its spectral response was studied within the framework of the parabolic WKB model to extract depletion width, unintentional doping level, and built-in electric field. Later, the work evaluated spectra of various optical functions such as refractive index, dielectric function, and high-frequency dielectric constant. This study was concluded by an in-depth investigation of Urbach’s tail using Codi’s rule. Hitherto the ongoing research focussed on the deposition of high-quality pure phase κ-Ga2O3. These objectives were achieved at low precursor flow rates leading to slow deposition rates. Low film thickness obstructs fully utilizing the optical potential of the material. To deal with these hurdles, a thin buffer layer of (111) oriented cubic MgO was employed in addition to a high precursor flow rate for realizing a thicker film of κ-Ga2O3 on the sapphire substrate. The asdeposited film possesses a high absorbance in conjunction with high film thickness, owing to a significant deposition rate. The fabricated photodetector on this film demonstrates ultra-high responsivity of ∼ 920 WA with rapid transients. Finally, the thermal stability of the films was assessed using temperature-dependent XRD measurements and an RSM scan. The film was found to be thermally stable until at least 950 oC.
Стилі APA, Harvard, Vancouver, ISO та ін.
6

Ko, Tsung-Shine, and 柯宗憲. "Epitaxial growth of nonpolar GaN based optoelectronic devices." Thesis, 2009. http://ndltd.ncl.edu.tw/handle/43011320137457312133.

Повний текст джерела
Анотація:
博士
國立交通大學
光電工程系所
97
In this dissertation, the epitaxial growth of nonpolar a-plane GaN based optoelectronic materials grown using metal organic chemical vapor deposition (MOCVD) have been investigated. Main works include optimum growth, InGaN multiple quantum wells (MQWs) design, reduction of defects and the fabrication of a-plane GaN based optoelectronic devices and analysis of device characteristics. For optimum growth of a-plane GaN, we confirmed variation of thickness of AlN nucleation layer and V/III ratio of a-plane GaN growth influence crystal quality of a-plane GaN thin film. We also tried to figure out the mechanism of a-plane GaN by using Wulff plot and selective area growth to analyze the growth behavior of a-plane GaN grown on r-plane sapphire, which could be useful to explain the reasons account for stripes and pits exist on a-plane GaN surface and give us a guidance to predict growth of a-plane GaN. In this dissertation, we used trench epitaxial lateral over growth (TELOG) and InGaN/GaN supperlattices (SLs) to improve crystal quality of a-plane GaN. The threading dislocation (TD) density can be reduced largely from 1×1010 cm−2 to 3×107 cm−2 for the N-face GaN wing. As for SLs part, The TD density in the sample with SLs was reduced from 3×1010 cm-2 down to ~9×109 cm-2. For active layer structural design, a-plane InGaN/GaN MQWs of different width ranging from 3 nm to 12 nm have been grown. The peak emission intensity of the photoluminescence (PL) reveals a decreasing trend as the well width increases from 3 nm to 12 nm. Low temperature (9 K) time-resolved PL (TRPL) study shows that the sample with 3 nm-thick wells has the best optical property with a fastest exciton decay time of 0.57 ns. More effective capturing of excitons due to larger localization energy Eloc and shorter radiative lifetime of localized excitons are observed in thinner well width samples were observed in the temperature dependent PL and TRPL. In development of nonpolar light-emitting diodes (LEDs), we successfully fabricated a-plane LEDs structure by using TELOG GaN substrate. Due to there are two areas with different defect density in this kind sample, the emission wavelength will be changed when we increased injection current. The power was 0.2 mW at 140 mA injection current. On the other hand, we also fabricated nonpolar LEDs by using InGaN/GaN SLs layer. Electroluminescence intensity of the sample with InGaN/GaN SLs was enhanced by a factor of 3.42 times to that of the conventional sample without InGaN/GaN SLs. In this dissertation, we have achieved the studies on the growth of a-plane GaN and the fabrication of devices. Whole achievements include optimum growth, MQWs structural design, crystal improvement of material and fabrication of a-plane LEDs. We hope this series of experiments to provide a useful information and support for development of nonpolar optoelectronic devices in future.
Стилі APA, Harvard, Vancouver, ISO та ін.
7

Kang, Jung-Hyun. "Epitaxial growth and characterisation of GaAs nanowires on Si for optoelectronic device applications." Phd thesis, 2012. http://hdl.handle.net/1885/149685.

Повний текст джерела
Анотація:
This thesis examines the Au-assisted growth of GaAs nanowires by MOCVD, and how this growth process can be tailored to produce well-aligned nanowires on Si suitable for applications in electronics and optoelectronics. i) Improving the morphology of GaAs nanowires on Si: Straight, vertically aligned GaAs nanowires were grown on Si (111) substrates coated with thin GaAs buffer layers. V/III precursor ratio and growth temperature are crucial factors influencing the morphology and quality of buffer layers. A double layer structure, consisting of a thin initial layer grown at low V/III ratio and low temperature, followed by a layer grown at high V/III ratio and high temperature, was crucial for achieving straight, vertically aligned GaAs nanowires on Si (111) substrates. An in-situ annealing step at high temperature after buffer layer growth improved the surface and structural properties of the buffer layer, which further improved the morphology of GaAs nanowire growth. ii) Improving the crystal structure of GaAs nanowires on Si: Defect-free GaAs nanowires were grown on Si by using either a two-temperature growth mode consisting of a short initial nucleation step under higher temperature followed by subsequent growth under lower temperature or a rapid growth rate mode with high source flow rate. These two growth modes not only eliminated planar crystallographic defects but also significantly reduced tapering. Core-shell GaAs-AlGaAs nanowires grown by two-temperature growth mode showed improved optical properties with strong photoluminescence and long carrier life times. iii) Optimizing the growth conditions for perfect GaAs nanowires on Si: By systematically manipulating the arsine (group-V) and triethylgallium (group-III) precursor flow rates, it was found that TMGa flow rate has the most significant effect on nanowire quality. Defect-free GaAs nanowires with minimal tapering and long exciton lifetimes were obtained at the highest TMGa flow rates. It was observed that Ga adatom concentration significantly affacts the growth of GaAs nanowires. iv) Band-gap engineering for GaAs nanowires on Si: Based on the defect-free GaAs nanowires grown by the two-temperature growth mode, highly strained core-shell nanowires of excellent optical quality were grown with GaAs cores and GaP shells. Photoluminescence from these nanowires was observed at energies dramatically blue-shifted from the unstrained GaAs free exciton emission energy. Using Raman scattering, it was possible to separately measure the degree of compressive and shear strain of the GaAs core and the Raman response of the GaP shell was related to tensile strain. This work presents significant advances in the growth of exceptionally high quality GaAs nanowires on Si, and reveals intriguing behaviour in the growth of nanoscale materials. These findings will greatly assist the development of future GaAs nanowire-based electronic and optoelectronic devices, and are expected to be more broadly relevant to the rational synthesis of other III-V nanowire materials on Si substrate and ultimate integration of III-V semiconductor optoelectronics and Si based microelectronics. -- provided by Candidate.
Стилі APA, Harvard, Vancouver, ISO та ін.
8

Hsiao-ChiuHsu and 徐曉秋. "Investigation of Nonpolar GaN-based Epitaxial Growth and Optoelectronic Devices by Metalorganic Vapor Phase Epitaxy Technique." Thesis, 2011. http://ndltd.ncl.edu.tw/handle/81241071464383077155.

Повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
9

Lever, Penelope. "Interdiffusion and metalorganic vapour phase epitaxial growth of self-assembled InGaAs quantum dot structures and devices." Phd thesis, 2004. http://hdl.handle.net/1885/148510.

Повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.

Частини книг з теми "Ga2O3 epitaxial growth and optoelectronic devices"

1

Figge, S., C. Kruse, T. Paskova, and D. Hommel. "Epitaxial technologies for short wavelength optoelectronic devices." In Crystal Growth - From Fundamentals to Technology, 295–317. Elsevier, 2004. http://dx.doi.org/10.1016/b978-044451386-1/50014-3.

Повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.

Тези доповідей конференцій з теми "Ga2O3 epitaxial growth and optoelectronic devices"

1

Alfaraj, Nasir A., Kuang-Hui Li, Chun Hong Kang, Laurentiu V. Braic, Tien Khee Ng, and Boon S. Ooi. "Epitaxial growth of [beta]-Ga2O3/[epsilon]-Ga2O3 polymorphic heterostructures on c-plane sapphire for deep-ultraviolet optoelectronics." In Oxide-based Materials and Devices XI, edited by Ferechteh H. Teherani, David C. Look, and David J. Rogers. SPIE, 2020. http://dx.doi.org/10.1117/12.2544427.

Повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
2

Yamauchi, Satoshi. "Plasma-assisted epitaxial growth of nitrogen-doped and high-quality ZnO thin films." In Integrated Optoelectronic Devices 2008, edited by Ferechteh H. Teherani and Cole W. Litton. SPIE, 2008. http://dx.doi.org/10.1117/12.774945.

Повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
3

de Lyon, Terence J., B. Baumgratz, G. R. Chapman, E. Gordon, Andrew T. Hunter, Michael D. Jack, John E. Jensen та ін. "Epitaxial growth of HgCdTe 1.55-μm avalanche photodiodes by molecular beam epitaxy". У Optoelectronics '99 - Integrated Optoelectronic Devices, редактори Gail J. Brown та Manijeh Razeghi. SPIE, 1999. http://dx.doi.org/10.1117/12.344562.

Повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
4

Dzegilenko, Fedor N. "Energetics and dynamics of GaAs epitaxial growth via quantum wave packet studies." In Optoelectronics '99 - Integrated Optoelectronic Devices, edited by Peter Blood, Akira Ishibashi, and Marek Osinski. SPIE, 1999. http://dx.doi.org/10.1117/12.356904.

Повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
5

Ng, Hou T., Pho Nguyen, Yi P. Chen, Aaron Mao, Jie Han, and Meyya Meyyappan. "Epitaxial single-crystalline inorganic nanowires and nanowalls: growth morphogenesis and applications in nano-optoelectronics." In Integrated Optoelectronic Devices 2004, edited by Marek Osinski, Hiroshi Amano, and Fritz Henneberger. SPIE, 2004. http://dx.doi.org/10.1117/12.530012.

Повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
6

Sood, Ashok K., Yash R. Puri, Frederick W. Clarke, Jie Deng, James C. M. Hwang, Steven K. Brierley, M. Asif Khan, et al. "Epitaxial growth and characterization of AlGaN/GaN HEMT devices on SiC substrates for RF applications." In Integrated Optoelectronic Devices 2007, edited by Hadis Morkoc and Cole W. Litton. SPIE, 2007. http://dx.doi.org/10.1117/12.704201.

Повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
7

Zou, J., M. Paladugu, Y. N. Guo, X. Zhang, G. J. Auchterlonie, H. J. Joyce, Q. Gao, H. H. Tan, C. Jagadish, and Y. Kim. "Growth behavior of epitaxial semiconductor axial nanowire heterostructures." In 2008 Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD). IEEE, 2008. http://dx.doi.org/10.1109/commad.2008.4802094.

Повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
8

Sood, Ashok K., Rajwinder Singh, Yash R. Puri, Frederick W. Clarke, Oleg Laboutin, Paul M. Deluca, Roger E. Wesler, Jie Deng, and James C. M. Hwang. "Growth and characterization of AlGaN/GaN epitaxial layers by MOCVD on SiC substrates for RF device applications." In Integrated Optoelectronic Devices 2006, edited by Cole W. Litton, James G. Grote, Hadis Morkoc, and Anupam Madhukar. SPIE, 2006. http://dx.doi.org/10.1117/12.651122.

Повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
9

Gao, Q., L. Fu, F. Wang, Y. Guo, Z. Y. Li, K. Peng, Li Li, et al. "Selective area epitaxial growth of InP nanowire array for solar cell applications." In 2014 Conference on Optoelectronic and Microelectronic Materials & Devices (COMMAD). IEEE, 2014. http://dx.doi.org/10.1109/commad.2014.7038704.

Повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
10

Zhiyuan Gao, Yue Hao, Jinfeng Zhang, Peixian Li, and Jincheng Zhang. "Influence of lateral growth on the optical properties of GaN epitaxial layers." In 2008 International Conference on Numerical Simulation of Optoelectronic Devices. IEEE, 2008. http://dx.doi.org/10.1109/nusod.2008.4668232.

Повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
Також вас можуть зацікавити розширені добірки на тему "Ga2O3 epitaxial growth and optoelectronic devices" для конкретних типів джерел:
Статті в журналах
Ми пропонуємо знижки на всі преміум-плани для авторів, чиї праці увійшли до тематичних добірок літератури. Зв'яжіться з нами, щоб отримати унікальний промокод!

До бібліографії