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Статті в журналах з теми "Ga2O3 epitaxial growth and optoelectronic devices"
Nelson, Erik C., Neville L. Dias, Kevin P. Bassett, Simon N. Dunham, Varun Verma, Masao Miyake, Pierre Wiltzius, et al. "Epitaxial growth of three-dimensionally architectured optoelectronic devices." Nature Materials 10, no. 9 (July 24, 2011): 676–81. http://dx.doi.org/10.1038/nmat3071.
Повний текст джерелаAn, Yuxin, Liyan Dai, Ying Wu, Biao Wu, Yanfei Zhao, Tong Liu, Hui Hao та ін. "Epitaxial growth of β-Ga2O3 thin films on Ga2O3 and Al2O3 substrates by using pulsed laser deposition". Journal of Advanced Dielectrics 09, № 04 (серпень 2019): 1950032. http://dx.doi.org/10.1142/s2010135x19500322.
Повний текст джерелаLu, Chao, Lei Gao, Fanqi Meng, Qinghua Zhang, Lihong Yang, Zeng Liu, Mingtong Zhu та ін. "Epitaxial growth of a β-Ga2O3 (−201)-oriented thin film on a threefold symmetrical SrTiO3 (111) substrate for heterogeneous integration". Journal of Applied Physics 133, № 4 (28 січня 2023): 045306. http://dx.doi.org/10.1063/5.0112175.
Повний текст джерелаGogova, Daniela, Misagh Ghezellou, Dat Q. Tran, Steffen Richter, Alexis Papamichail, Jawad ul Hassan, Axel R. Persson та ін. "Epitaxial growth of β-Ga2O3 by hot-wall MOCVD". AIP Advances 12, № 5 (1 травня 2022): 055022. http://dx.doi.org/10.1063/5.0087571.
Повний текст джерелаGuzilova, L. I., A. S. Grashchenko та V. I. Nikolaev. "THE STUDY OF MECHANICAL DEFORMATION RESISTANCE OF α-Ga2O3 EPITAXIAL LAYERS USING THE NANOINDENTATION TECHNIQUE". Frontier materials & technologies, № 4 (2021): 7–16. http://dx.doi.org/10.18323/2782-4039-2021-4-7-16.
Повний текст джерелаVescan, L., T. Stoica, M. Goryll, and K. Grimm. "Selective epitaxial growth of strained SiGe/Si for optoelectronic devices." Materials Science and Engineering: B 51, no. 1-3 (February 1998): 166–69. http://dx.doi.org/10.1016/s0921-5107(97)00253-5.
Повний текст джерелаZhao, Mei, Manman Liu, Youqing Dong, Chao Zou, Keqin Yang, Yun Yang, Lijie Zhang, and Shaoming Huang. "Epitaxial growth of two-dimensional SnSe2/MoS2 misfit heterostructures." Journal of Materials Chemistry C 4, no. 43 (2016): 10215–22. http://dx.doi.org/10.1039/c6tc03406c.
Повний текст джерелаTak, Bhera Ram, Ming-Min Yang, Marin Alexe та Rajendra Singh. "Deep-Level Traps Responsible for Persistent Photocurrent in Pulsed-Laser-Deposited β-Ga2O3 Thin Films". Crystals 11, № 9 (30 серпня 2021): 1046. http://dx.doi.org/10.3390/cryst11091046.
Повний текст джерелаHasan, Md Nazmul, Edward Swinnich, and Jung-Hun Seo. "Recent Progress in Gallium Oxide and Diamond Based High Power and High-Frequency Electronics." International Journal of High Speed Electronics and Systems 28, no. 01n02 (March 2019): 1940004. http://dx.doi.org/10.1142/s0129156419400044.
Повний текст джерелаSkipper, Alec M., Priyanka Petluru, Daniel J. Ironside, Ashlee M. García, Aaron J. Muhowski, Daniel Wasserman, and Seth R. Bank. "All-epitaxial, laterally structured plasmonic materials." Applied Physics Letters 120, no. 16 (April 18, 2022): 161103. http://dx.doi.org/10.1063/5.0094677.
Повний текст джерелаДисертації з теми "Ga2O3 epitaxial growth and optoelectronic devices"
Fisher, Martin John. "Epitaxial growth and characterisation of heterojunction and homojunction LEDs with InAs active regions." Thesis, Lancaster University, 1998. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.268062.
Повний текст джерелаWagner, Brent K. "Molecular beam epitaxial growth of CdTe and HgCdTe for new infrared and optoelectronic devices." Diss., Georgia Institute of Technology, 1991. http://hdl.handle.net/1853/13701.
Повний текст джерелаAbid, Mohamed. "Design and epitaxial growth of vertical cavity surface-emitting lasers (VCSEL) emitting at ultraviolet wavelength." Diss., Georgia Institute of Technology, 2013. http://hdl.handle.net/1853/47682.
Повний текст джерелаChoi, Suk. "Growth and characterization of III-nitride materials for high efficiency optoelectronic devices by metalorganic chemical vapor deposition." Diss., Georgia Institute of Technology, 2012. http://hdl.handle.net/1853/45823.
Повний текст джерелаMuazzam, Usman Ul. "Investigation of Growth, Structural and Optical properties of different phases of Ga2O3." Thesis, 2023. https://etd.iisc.ac.in/handle/2005/6127.
Повний текст джерелаKo, Tsung-Shine, and 柯宗憲. "Epitaxial growth of nonpolar GaN based optoelectronic devices." Thesis, 2009. http://ndltd.ncl.edu.tw/handle/43011320137457312133.
Повний текст джерела國立交通大學
光電工程系所
97
In this dissertation, the epitaxial growth of nonpolar a-plane GaN based optoelectronic materials grown using metal organic chemical vapor deposition (MOCVD) have been investigated. Main works include optimum growth, InGaN multiple quantum wells (MQWs) design, reduction of defects and the fabrication of a-plane GaN based optoelectronic devices and analysis of device characteristics. For optimum growth of a-plane GaN, we confirmed variation of thickness of AlN nucleation layer and V/III ratio of a-plane GaN growth influence crystal quality of a-plane GaN thin film. We also tried to figure out the mechanism of a-plane GaN by using Wulff plot and selective area growth to analyze the growth behavior of a-plane GaN grown on r-plane sapphire, which could be useful to explain the reasons account for stripes and pits exist on a-plane GaN surface and give us a guidance to predict growth of a-plane GaN. In this dissertation, we used trench epitaxial lateral over growth (TELOG) and InGaN/GaN supperlattices (SLs) to improve crystal quality of a-plane GaN. The threading dislocation (TD) density can be reduced largely from 1×1010 cm−2 to 3×107 cm−2 for the N-face GaN wing. As for SLs part, The TD density in the sample with SLs was reduced from 3×1010 cm-2 down to ~9×109 cm-2. For active layer structural design, a-plane InGaN/GaN MQWs of different width ranging from 3 nm to 12 nm have been grown. The peak emission intensity of the photoluminescence (PL) reveals a decreasing trend as the well width increases from 3 nm to 12 nm. Low temperature (9 K) time-resolved PL (TRPL) study shows that the sample with 3 nm-thick wells has the best optical property with a fastest exciton decay time of 0.57 ns. More effective capturing of excitons due to larger localization energy Eloc and shorter radiative lifetime of localized excitons are observed in thinner well width samples were observed in the temperature dependent PL and TRPL. In development of nonpolar light-emitting diodes (LEDs), we successfully fabricated a-plane LEDs structure by using TELOG GaN substrate. Due to there are two areas with different defect density in this kind sample, the emission wavelength will be changed when we increased injection current. The power was 0.2 mW at 140 mA injection current. On the other hand, we also fabricated nonpolar LEDs by using InGaN/GaN SLs layer. Electroluminescence intensity of the sample with InGaN/GaN SLs was enhanced by a factor of 3.42 times to that of the conventional sample without InGaN/GaN SLs. In this dissertation, we have achieved the studies on the growth of a-plane GaN and the fabrication of devices. Whole achievements include optimum growth, MQWs structural design, crystal improvement of material and fabrication of a-plane LEDs. We hope this series of experiments to provide a useful information and support for development of nonpolar optoelectronic devices in future.
Kang, Jung-Hyun. "Epitaxial growth and characterisation of GaAs nanowires on Si for optoelectronic device applications." Phd thesis, 2012. http://hdl.handle.net/1885/149685.
Повний текст джерелаHsiao-ChiuHsu and 徐曉秋. "Investigation of Nonpolar GaN-based Epitaxial Growth and Optoelectronic Devices by Metalorganic Vapor Phase Epitaxy Technique." Thesis, 2011. http://ndltd.ncl.edu.tw/handle/81241071464383077155.
Повний текст джерелаLever, Penelope. "Interdiffusion and metalorganic vapour phase epitaxial growth of self-assembled InGaAs quantum dot structures and devices." Phd thesis, 2004. http://hdl.handle.net/1885/148510.
Повний текст джерелаЧастини книг з теми "Ga2O3 epitaxial growth and optoelectronic devices"
Figge, S., C. Kruse, T. Paskova, and D. Hommel. "Epitaxial technologies for short wavelength optoelectronic devices." In Crystal Growth - From Fundamentals to Technology, 295–317. Elsevier, 2004. http://dx.doi.org/10.1016/b978-044451386-1/50014-3.
Повний текст джерелаТези доповідей конференцій з теми "Ga2O3 epitaxial growth and optoelectronic devices"
Alfaraj, Nasir A., Kuang-Hui Li, Chun Hong Kang, Laurentiu V. Braic, Tien Khee Ng, and Boon S. Ooi. "Epitaxial growth of [beta]-Ga2O3/[epsilon]-Ga2O3 polymorphic heterostructures on c-plane sapphire for deep-ultraviolet optoelectronics." In Oxide-based Materials and Devices XI, edited by Ferechteh H. Teherani, David C. Look, and David J. Rogers. SPIE, 2020. http://dx.doi.org/10.1117/12.2544427.
Повний текст джерелаYamauchi, Satoshi. "Plasma-assisted epitaxial growth of nitrogen-doped and high-quality ZnO thin films." In Integrated Optoelectronic Devices 2008, edited by Ferechteh H. Teherani and Cole W. Litton. SPIE, 2008. http://dx.doi.org/10.1117/12.774945.
Повний текст джерелаde Lyon, Terence J., B. Baumgratz, G. R. Chapman, E. Gordon, Andrew T. Hunter, Michael D. Jack, John E. Jensen та ін. "Epitaxial growth of HgCdTe 1.55-μm avalanche photodiodes by molecular beam epitaxy". У Optoelectronics '99 - Integrated Optoelectronic Devices, редактори Gail J. Brown та Manijeh Razeghi. SPIE, 1999. http://dx.doi.org/10.1117/12.344562.
Повний текст джерелаDzegilenko, Fedor N. "Energetics and dynamics of GaAs epitaxial growth via quantum wave packet studies." In Optoelectronics '99 - Integrated Optoelectronic Devices, edited by Peter Blood, Akira Ishibashi, and Marek Osinski. SPIE, 1999. http://dx.doi.org/10.1117/12.356904.
Повний текст джерелаNg, Hou T., Pho Nguyen, Yi P. Chen, Aaron Mao, Jie Han, and Meyya Meyyappan. "Epitaxial single-crystalline inorganic nanowires and nanowalls: growth morphogenesis and applications in nano-optoelectronics." In Integrated Optoelectronic Devices 2004, edited by Marek Osinski, Hiroshi Amano, and Fritz Henneberger. SPIE, 2004. http://dx.doi.org/10.1117/12.530012.
Повний текст джерелаSood, Ashok K., Yash R. Puri, Frederick W. Clarke, Jie Deng, James C. M. Hwang, Steven K. Brierley, M. Asif Khan, et al. "Epitaxial growth and characterization of AlGaN/GaN HEMT devices on SiC substrates for RF applications." In Integrated Optoelectronic Devices 2007, edited by Hadis Morkoc and Cole W. Litton. SPIE, 2007. http://dx.doi.org/10.1117/12.704201.
Повний текст джерелаZou, J., M. Paladugu, Y. N. Guo, X. Zhang, G. J. Auchterlonie, H. J. Joyce, Q. Gao, H. H. Tan, C. Jagadish, and Y. Kim. "Growth behavior of epitaxial semiconductor axial nanowire heterostructures." In 2008 Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD). IEEE, 2008. http://dx.doi.org/10.1109/commad.2008.4802094.
Повний текст джерелаSood, Ashok K., Rajwinder Singh, Yash R. Puri, Frederick W. Clarke, Oleg Laboutin, Paul M. Deluca, Roger E. Wesler, Jie Deng, and James C. M. Hwang. "Growth and characterization of AlGaN/GaN epitaxial layers by MOCVD on SiC substrates for RF device applications." In Integrated Optoelectronic Devices 2006, edited by Cole W. Litton, James G. Grote, Hadis Morkoc, and Anupam Madhukar. SPIE, 2006. http://dx.doi.org/10.1117/12.651122.
Повний текст джерелаGao, Q., L. Fu, F. Wang, Y. Guo, Z. Y. Li, K. Peng, Li Li, et al. "Selective area epitaxial growth of InP nanowire array for solar cell applications." In 2014 Conference on Optoelectronic and Microelectronic Materials & Devices (COMMAD). IEEE, 2014. http://dx.doi.org/10.1109/commad.2014.7038704.
Повний текст джерелаZhiyuan Gao, Yue Hao, Jinfeng Zhang, Peixian Li, and Jincheng Zhang. "Influence of lateral growth on the optical properties of GaN epitaxial layers." In 2008 International Conference on Numerical Simulation of Optoelectronic Devices. IEEE, 2008. http://dx.doi.org/10.1109/nusod.2008.4668232.
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