Добірка наукової літератури з теми "G switch"
Оформте джерело за APA, MLA, Chicago, Harvard та іншими стилями
Ознайомтеся зі списками актуальних статей, книг, дисертацій, тез та інших наукових джерел на тему "G switch".
Біля кожної праці в переліку літератури доступна кнопка «Додати до бібліографії». Скористайтеся нею – і ми автоматично оформимо бібліографічне посилання на обрану працю в потрібному вам стилі цитування: APA, MLA, «Гарвард», «Чикаго», «Ванкувер» тощо.
Також ви можете завантажити повний текст наукової публікації у форматі «.pdf» та прочитати онлайн анотацію до роботи, якщо відповідні параметри наявні в метаданих.
Статті в журналах з теми "G switch"
Gohil, S. "POS0626 MONEY MATTERS: ASSESSING THE VALUE OF THE ADALIMUMAB BIOSIMILAR SWITCH FOR RHEUMATOLOGY PATIENTS." Annals of the Rheumatic Diseases 80, Suppl 1 (May 19, 2021): 551.2–551. http://dx.doi.org/10.1136/annrheumdis-2021-eular.2566.
Повний текст джерелаMott, Helen R., and Darerca Owen. "Allostery and dynamics in small G proteins." Biochemical Society Transactions 46, no. 5 (October 9, 2018): 1333–43. http://dx.doi.org/10.1042/bst20170569.
Повний текст джерелаGohil, S. "AB1343-HPR A QUALITATIVE REVIEW ASSESSING THEMATIC OUTCOMES FROM THE PHARMACY-LED ADALIMUMAB BIOSIMILAR SWITCH PLAN ACROSS 3 SPECIALITIES; RHEUMATOLOGY, GASTROENTEROLOGY AND DERMATOLOGY AT UNIVERSITY HOSPITALS OF COVENTRY AND WARWICKSHIRE (UHCW)." Annals of the Rheumatic Diseases 79, Suppl 1 (June 2020): 1959.1–1960. http://dx.doi.org/10.1136/annrheumdis-2020-eular.3880.
Повний текст джерелаSarma, Yadavalli V. S. "A G/o/G system with slow switch." Stochastic Analysis and Applications 7, no. 1 (January 1989): 117–24. http://dx.doi.org/10.1080/07362998908809171.
Повний текст джерелаChen, Wenguo, Rui Wang, Huiying Wang, and Zhen Yang. "Design, Simulation, and Fabrication of a New Three-Axis Inertial Switch with a Triangular Movable Electrode Structure." Micromachines 14, no. 1 (December 30, 2022): 94. http://dx.doi.org/10.3390/mi14010094.
Повний текст джерелаFerrarelli, L. K. "A disease-causing G protein switch." Science 352, no. 6283 (April 14, 2016): 304–6. http://dx.doi.org/10.1126/science.352.6283.304-r.
Повний текст джерелаGhusinga, Khem Raj, Timothy C. Elston, and Alan M. Jones. "Towards resolution of a paradox in plant G-protein signaling." Plant Physiology 188, no. 2 (November 16, 2021): 807–15. http://dx.doi.org/10.1093/plphys/kiab534.
Повний текст джерелаNishimura, Shoichi, and Yong Jiang. "An M/G/l Vacation Model with Two Service Modes." Probability in the Engineering and Informational Sciences 9, no. 3 (July 1995): 355–74. http://dx.doi.org/10.1017/s0269964800003922.
Повний текст джерелаWong, Wei. "A regulatory switch in obesity." Science 370, no. 6521 (December 3, 2020): 1177.7–1178. http://dx.doi.org/10.1126/science.370.6521.1177-g.
Повний текст джерелаDeng, Jufeng, Dian Song, and Shijie Su. "Highly Sensitive Inertial Micro-Switch for Achieving Adjustable Multi-Threshold Acceleration." Actuators 12, no. 2 (January 26, 2023): 53. http://dx.doi.org/10.3390/act12020053.
Повний текст джерелаДисертації з теми "G switch"
Cristillo, Anthony D. "Characterization of G¦o/G¦1 switch genes in cultured T lymphocytes." Thesis, National Library of Canada = Bibliothèque nationale du Canada, 1998. http://www.collectionscanada.ca/obj/s4/f2/dsk2/ftp02/NQ27819.pdf.
Повний текст джерелаTashiro, Junko. "Palindromic but not G-rich sequences are targets of class switch recombination." Kyoto University, 2001. http://hdl.handle.net/2433/150571.
Повний текст джерелаHeximer, Scott Patrick. "Studies on two putative G¦0/G¦1 switch genes in human T-lymphocytes, RGS2/G0S8 and G0S24." Thesis, National Library of Canada = Bibliothèque nationale du Canada, 1997. http://www.collectionscanada.ca/obj/s4/f2/dsk3/ftp04/nq20563.pdf.
Повний текст джерелаGreco, Maria Laura. "Conformational switch of oncogene promotorial sequences towards non-canonical DNA secondary structures." Doctoral thesis, Università degli studi di Padova, 2015. http://hdl.handle.net/11577/3424026.
Повний текст джерелаMolti studi dimostrano che l’assunzione di strutture “non canoniche” da parte della molecola di DNA sia coinvolto in molti importanti processi biologici che regolano la proliferazione cellulare e l’espressione proteica. In particolare, è stata dimostrata l’implicazione di una di queste particolari strutture secondarie, chiamata G-quadruplex (G4), nel blocco della progressione del cancro. La struttura G4 è propria di sequenze di DNA ricche in guanine consecutive che assemblandosi tramite legami di Hoostein, formano piani di tetradi di guanine impilati tra loro. Questa particolare conformazione si forma prevalentemente lungo i tratti terminali dei cromosomi, i telomeri, ma anche lungo siti promotoriali di diversi oncogeni coinvolti in molti tipi di cancro. La formazione del G4 porta ad una sorta di ingombro sulla molecola di DNA che inibisce l’elongazione del telomero e i processi di trascrizione. Questo porta ad uno “spegnimento” di questi meccanismi che sono direttamente coinvolti nello sviluppo del cancro. Molti fattori possono influenzare gli equilibri delle conformazioni G4, per esempio, le condizioni saline, la temperatura, il pH, il legame con specifiche proteine, così come la presenza di cosoluti. Inoltre, la struttura globale del G4 é rigorosamente dipendente dalla sequenza oligonucleotidica. Pertanto, diverse strutture G4 possono essere identificate a livello cellulare. In questo progetto, è stato condotto uno studio conformazionale di regioni promotoriali degli oncogeni EGFR e BRAF, dal momento che, su questi oncogeni è stata riscontrata la presenza di regioni “G-rich” (ricche in guanine) potenzialmente in grado di assumere una struttura G4. In particolare, sono state analizzate le sequenze a partire dalle posizioni -272, -37 di EGFR e -176 di BRAF dal “transcription start site” (sito di inizio della trascrizione). Finora, non sono presenti dati in letteratura riguardanti la caratterizzazione strutturale di queste sequenze in soluzione. Con questo studio, è stata dimostrata la capacità delle suddette sequenze di assumere una conformazione G4 nelle idonee condizioni sperimentali e soprattutto in un ambiente che mimi quello fisiologico (150mM KCl e pH 7.5). Poiché gli oncogeni sono sequenze a doppio filamento, anche la conformazione i-motif assunta dal filamento complementare ricco in citosine (“C-rich”) può essere coinvolta nella regolazione del processo di trascrizione genica. Tuttavia, sinora non è stata riscontrata alcuna rilevanza fisiologica della conformazione i-motif. In questo lavoro, è stata caratterizzata anche la conformazione assunta dal filamento “C-rich”, in particolare se essa possa esistere in condizioni fisiologiche e se fosse in grado di destabilizzare la doppia elica insieme al G4. I dati ottenuti dimostrano che in condizioni fisiologiche la forma prevalente è il doppio filamento. Tuttavia, è stato dimostrato come alcuni ligandi siano in grado di spostare l’equilibrio del DNA dalla sua forma di doppia elica-B, verso le conformazioni non canoniche. È stato infatti condotto uno studio su due librerie di composti con lo scopo di evidenziare un composto selettivo ed efficace. Ci siamo focalizzati su derivati antrachinonici e di naftalendiimidi noti come efficaci ligandi per il G4. Questi composti sono stati prima testati su diversi templati G4, noti per essere dei modelli validati per lo studio di binding sul G4. Quindi la loro efficienza sul G4 è stata poi comparata a quella sul doppio filamento. I derivati più selettivi verso il G4 sono stati poi testati su G4 oncogenici. Sebbene una continuazione dello studio fosse necessaria per identificare un composto “lead”, con questo lavoro è stato dimostrato come l’uso di una sostituzione asimmetrica sull’anello aromatico possa implementare la selettività tra più G4. Infine, per identificare la formazione del G4 in vivo, è stata messa a punto una nuova tecnica che consiste in un protocollo di footprinting in vivo. Questo lavoro, svolto nell’Università del Mississippi, Oxford, MS (USA) sotto la supervisione della dr.ssa Tracy A. Brooks, dovrebbe fornire nuovi sviluppi per la formazione del G4 nelle cellule in accordo con le loro condizioni fisiologiche
Sutherland, Caleb, Yunxi Cui, Hanbin Mao, and Laurence H. Hurley. "A Mechanosensor Mechanism Controls the G-Quadruplex/i-Motif Molecular Switch in the MYC Promoter NHE III 1." AMER CHEMICAL SOC, 2016. http://hdl.handle.net/10150/621939.
Повний текст джерелаMirihana, Arachchilage Gayan S. "REGULATORY ROLES OF G-QUADRUPLEX IN microRNA PROCESSING AND mRNA TRANSLATION." Kent State University / OhioLINK, 2016. http://rave.ohiolink.edu/etdc/view?acc_num=kent1469576783.
Повний текст джерелаYamaoki, Yudai. "The development of intelligent ribozyme and RNA aptamer whose activities switch on in response to K⁺via quadruplex formation." Kyoto University, 2016. http://hdl.handle.net/2433/204592.
Повний текст джерелаAouimeur, Walid. "Systèmes de mesure intégré sub-millimétrique en bande G (140-220 GHz) en technologie BiCMOS 55 nm." Thesis, Université Grenoble Alpes (ComUE), 2018. http://www.theses.fr/2018GREAT046.
Повний текст джерелаMicroelectronic applications such as wireless communications, radar or space detections require higher data rate resolutions, implying the use of millimeter wave and submillimeter frequencies. Thanks to the silicon technologies improvement, some microelectronic circuits are emerging working in the frequency range of 140-220 GHz (G-band) but they suffer from a lack of complete characterization tools involving costly investment. For example, there is currently no commercial vectorial network analyser (VNA) that can measure S parameters in the 4-ports G-band. The classical characterization of millimeter wave circuits in n ports (with n> 2) consists in using a vectorial analyzer of 2-ports networks and matching the other unused ports to 50Ω. By circular permutation, one thus manages to extract the S matrix from a device with n ports (with n> 2). This set up induces very long and difficult measurements and it requires on the one hand some very expensive measuring equipment at millimeter frequencies and on the other hand to implement accurate and dedicated calibration and de-embedding methods.Therefore, the work developed into this PhD study aimed to integrate in the die the measurement systems that would measure small signals "S-parameters" of the device under test (DUT). Being closer to the DST makes it possible to reduce the insertion losses, to reduce the amplitude of the error vectors and thus the residual errors after calibration. Moreover, it is possible to better control the power of the signal sent and to consider calibration methods using integrated loads, which reduces the time and cost processing. The technology used is the SiGe BiCMOS 55 nm technology developed by STMicroelectronics, a technology dedicated to RF and millimeter wave’s circuits.The system developed is a 1-port system. The solution developed consists on connecting the wafer with some probes and driving it with an external signal that spans the 35-55 GHz band. Once into the die, this signal is then quadrupled in frequency and amplified to reach good power level in G band at the DUT inputs. Some S-parameters (S11 and S22) are extracted from the DUT thanks to some very directive couplers designed respectively at the input and at the output of the DUT. The outputs of the couplers are then converted to low frequencies (IF =0.5-2.4 GHz) through passive frequency mixers.In a first part of the thesis manuscript, the way to work is argued, supported by a study of the state of the art concerning the measurement systems. Then, design and characterization of each blocks of the system are detailed: the frequency quadrupler in G band (composed of a W band frequency doubler, followed with a G band frequency doubler), the fully integrated transfer switch in G-band allowing driving the millimeter waves signal to the DUT input or to the DUT output, the directive couplers based on the slow wave lines, the frequency mixers used to bring back the results in base band frequency, etc… All the different blocks detailed, the measurement systems can be introduced. A first system, a one-port measurement system, has been designed as a proof of concept. Once the approach validated, a second system, two-ports measurement system, has been developed presenting an heterodyne architecture and a transfer switch in G band driving the input signal toward the DUT input or output
FAVORETO, R. C. "Uma Proposta de Solução para Levantamento do Inventário dos Elementos de Rede em Redes Ópticas de Transporte." Universidade Federal do Espírito Santo, 2014. http://repositorio.ufes.br/handle/10/9648.
Повний текст джерелаAs demandas por serviços de telecomunicações multimídia, garantia de QoS (Quality of Service) e mecanismos de gerenciamento e controle direcionam a evolução da rede de núcleo para adoção da tecnologia OTN (Optical Transport Network) como solução de rede de transporte. Para conduzir a evolução da tecnologia OTN a ITU-T (International Telecommunication Union Telecommunications Standardization Sector) estabelece uma série de recomendações, dentre elas, as específicas para o plano de gerenciamento de redes. Essas, por sua vez, apresentam deficiências no que se referem ao levantamento do inventário dos objetos gerenciados definidos pelas normas da ITU-T. A ITU-T define a representação dos elementos de rede em caráter funcional, mais especificamente como módulos de Funções Atômicas. Contudo, a falta de clareza na implementação das Funções Atômicas e a carência de integração com as representações físicas dos elementos de rede implica na omissão, por parte dos diversos fabricantes, da implementação dos mecanismos recomendados em norma. Esta dissertação tem como objetivo geral apresentar uma proposta de solução para o levantamento do inventário dos elementos de rede em redes OTN abrangendo de forma integrada as representações funcional e física do elemento de rede, além de possibilitar aos diversos fabricantes a aderência às normas da ITU-T bem como oferecer ao operador de rede a configuração dos componentes de uma forma mais intuitiva.
Sutherland, Caleb Daniel. "Characterization and Molecular Targeting of a Mechanosensor Mechanism Controlled By the G-Quadruplex/I-Motif Molecular Switch in the MYC Promoter NHE III₁." Diss., The University of Arizona, 2015. http://hdl.handle.net/10150/566983.
Повний текст джерелаКниги з теми "G switch"
H & G (Switched on Schoolhouse). Alpha Omega Publications (AZ), 2003.
Знайти повний текст джерелаЧастини книг з теми "G switch"
Zhang, Si-Cai, Kazem Nouri, Ehsan Amin, Mohamed S. Taha, Hossein Nakhaeizadeh, Saeideh Nakhaei-Rad, Radovan Dvorsky, and Mohammad Reza Ahmadian. "Classical Rho Proteins: Biochemistry of Molecular Switch Function and Regulation." In Ras Superfamily Small G Proteins: Biology and Mechanisms 1, 327–40. Vienna: Springer Vienna, 2014. http://dx.doi.org/10.1007/978-3-7091-1806-1_14.
Повний текст джерелаRoach, Pat R., and Ben P. M. Helvensteijn. "A 3He-Gap Heat Switch for Use Below 2 K in Zero G." In Advances in Cryogenic Engineering, 923–30. Boston, MA: Springer US, 1992. http://dx.doi.org/10.1007/978-1-4615-3368-9_20.
Повний текст джерелаCornelissen, Gunther, and Norbert Peyerimhoff. "Examples of Homologically Wide Actions." In Twisted Isospectrality, Homological Wideness, and Isometry, 73–83. Cham: Springer International Publishing, 2023. http://dx.doi.org/10.1007/978-3-031-27704-7_9.
Повний текст джерелаVidhyasekaran, P. "G-Proteins as Molecular Switches in Signal Transduction." In PAMP Signals in Plant Innate Immunity, 163–205. Dordrecht: Springer Netherlands, 2013. http://dx.doi.org/10.1007/978-94-007-7426-1_3.
Повний текст джерела"THE WONDERFUL WORLD OF G PROTEINS AND G PROTEIN–COUPLED RECEPTORS." In The Molecular Switch, 170–200. Princeton University Press, 2020. http://dx.doi.org/10.2307/j.ctvx5w8pf.8.
Повний текст джерела"5. THE WONDERFUL WORLD OF G PROTEINS AND G PROTEIN–COUPLED RECEPTORS." In The Molecular Switch, 170–200. Princeton University Press, 2020. http://dx.doi.org/10.1515/9780691200255-006.
Повний текст джерелаSung, Ying-Ju, and Richard T. Ambron. "Protein kinase G is a molecular switch for pain." In The Neurobiology, Physiology, and Psychology of Pain, 67–77. Elsevier, 2022. http://dx.doi.org/10.1016/b978-0-12-820589-1.00007-5.
Повний текст джерелаXie, Xiang-Qun, and Ananda Chowdhury. "Advances in Methods to Characterize Ligand-Induced Ionic Lock and Rotamer Toggle Molecular Switch in G Protein-Coupled Receptors." In G Protein Coupled Receptors - Structure, 153–74. Elsevier, 2013. http://dx.doi.org/10.1016/b978-0-12-391861-1.00007-1.
Повний текст джерелаJohnson, Christian W., and Carla Mattos. "The Allosteric Switch and Conformational States in Ras GTPase Affected by Small Molecules." In Inhibitors of the Ras Superfamily G-proteins, Part A, 41–67. Elsevier, 2013. http://dx.doi.org/10.1016/b978-0-12-416749-0.00003-8.
Повний текст джерелаWu, Xiaohan, Ruijing Ge, Deji Akinwande, and Jack C. Lee. "Memristors Based on 2D Monolayer Materials." In Memristor - An Emerging Device for Post-Moore’s Computing and Applications. IntechOpen, 2021. http://dx.doi.org/10.5772/intechopen.98331.
Повний текст джерелаТези доповідей конференцій з теми "G switch"
Ramini, Abdallah, Mohammad I. Younis, and Quang T. Su. "Low-G Electrostatically Actuated Resonant Switch." In ASME 2012 International Design Engineering Technical Conferences and Computers and Information in Engineering Conference. American Society of Mechanical Engineers, 2012. http://dx.doi.org/10.1115/detc2012-70328.
Повний текст джерелаMedina, Lior, Rivka Gilat, and Slava Krylov. "Sub g Threshold Acceleration Sensor Incorporating Latched Bistable Beam." In ASME 2018 International Design Engineering Technical Conferences and Computers and Information in Engineering Conference. American Society of Mechanical Engineers, 2018. http://dx.doi.org/10.1115/detc2018-85181.
Повний текст джерелаRaghunathan, Nithin, Waterloo Tsutsui, Weinong Chen, and Dimitrios Peroulis. "A single crystal silicon low-g switch tolerant to impact accelerations up to 24,000 g." In TRANSDUCERS 2015 - 2015 18th International Solid-State Sensors, Actuators and Microsystems Conference. IEEE, 2015. http://dx.doi.org/10.1109/transducers.2015.7181130.
Повний текст джерелаRamanathan, Murugappan, and Rudra Pratap. "Energy Based Design And Validation of Latch MEMS g-Switch." In 2018 4th IEEE International Conference on Emerging Electronics (ICEE). IEEE, 2018. http://dx.doi.org/10.1109/icee44586.2018.8937948.
Повний текст джерелаXiong, Z., B. Tang, F. Zhang, M. Yuan, J. Xie, and C. Wang. "A Low-G MEMS Acceleration Switch Based on Direct Contact Method." In 2018 IEEE Sensors. IEEE, 2018. http://dx.doi.org/10.1109/icsens.2018.8630307.
Повний текст джерелаXiong, Zhuang, Fengtian Zhang, Yingdong Pu, Bin Tang, Jie Yang, and Chao Wang. "A silicon based low-g MEMS inertial switch for linear acceleration sensing application." In 2015 International Conference on Manipulation, Manufacturing and Measurement on the Nanoscale (3M-NANO). IEEE, 2015. http://dx.doi.org/10.1109/3m-nano.2015.7425457.
Повний текст джерелаZhu, Ying-Min, Chun-Yue Huang, Jian-Yuan Jia, and Kang-Qi Fan. "Simulation on Dynamic Characteristics of Micro Magnetic Acceleration Switch Based on Finite Element Method." In 2007 First International Conference on Integration and Commercialization of Micro and Nanosystems. ASMEDC, 2007. http://dx.doi.org/10.1115/mnc2007-21204.
Повний текст джерелаKrakover, Naftaly, Ronen Maimon, Tamar Tepper-Faran, Noam Yitzhak, and Slava Krylov. "Reliability of an 1000 G Range Vertically Integrated Silicon on Insulator (SOI) Impact Switch." In 2020 IEEE International Symposium on Inertial Sensors and Systems (INERTIAL). IEEE, 2020. http://dx.doi.org/10.1109/inertial48129.2020.9090023.
Повний текст джерелаAouimeur, Walid, Marc Margalef-Rovira, Estelle Lauga-Larroze, Daniel Gloria, Christophe Gaquiere, Issa Alaji, and Jean-Daniel Arnould. "A Fully-Integrated High-Isolation Transfer Switch for G-band in-situ Reflectometer applications." In 2020 IEEE MTT-S International Conference on Microwaves for Intelligent Mobility (ICMIM). IEEE, 2020. http://dx.doi.org/10.1109/icmim48759.2020.9299098.
Повний текст джерелаLin, Luxing, Qiancheng Zhao, Zhenchuan Yang, Dacheng Zhang, and Guizhen Yan. "Design and simulation of a 2-axis low g acceleration switch with multi-folded beams." In 2014 IEEE 12th International Conference on Solid -State and Integrated Circuit Technology (ICSICT). IEEE, 2014. http://dx.doi.org/10.1109/icsict.2014.7021682.
Повний текст джерелаЗвіти організацій з теми "G switch"
Baker, Michael Sean, and Kenneth Roy Pohl. High-G testing of MEMS mechanical non-volatile memory and silicon re-entry switch. Office of Scientific and Technical Information (OSTI), October 2005. http://dx.doi.org/10.2172/875630.
Повний текст джерелаChen, Weinong W. Exploration of MEMS G-Switches at 100-10,000 G-Levels with Redundancy. Fort Belvoir, VA: Defense Technical Information Center, April 2014. http://dx.doi.org/10.21236/ada602474.
Повний текст джерелаLahav, Ori, Albert Heber, and David Broday. Elimination of emissions of ammonia and hydrogen sulfide from confined animal and feeding operations (CAFO) using an adsorption/liquid-redox process with biological regeneration. United States Department of Agriculture, March 2008. http://dx.doi.org/10.32747/2008.7695589.bard.
Повний текст джерелаGrumet, Rebecca, Rafael Perl-Treves, and Jack Staub. Ethylene Mediated Regulation of Cucumis Reproduction - from Sex Expression to Fruit Set. United States Department of Agriculture, February 2010. http://dx.doi.org/10.32747/2010.7696533.bard.
Повний текст джерелаDickman, Martin B., and Oded Yarden. Genetic and chemical intervention in ROS signaling pathways affecting development and pathogenicity of Sclerotinia sclerotiorum. United States Department of Agriculture, July 2015. http://dx.doi.org/10.32747/2015.7699866.bard.
Повний текст джерела