Готові списки джерел за темами / Fluctuation electron microscopy

Добірка наукової літератури з теми "Fluctuation electron microscopy"

Автор: Grafiati

Опубліковано: 10 грудня 2022

Оновлено: 28 січня 2023

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Статті в журналах з теми "Fluctuation electron microscopy"

Kennedy, Ellis, Neal Reynolds, Luis Rangel DaCosta, Frances Hellman, Colin Ophus, and M. C. Scott. "Tilted fluctuation electron microscopy." Applied Physics Letters 117, no. 9 (August 31, 2020): 091903. http://dx.doi.org/10.1063/5.0015532.

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Zjajo, Armin, Itai Matzkevich, Hongchu Du, Rafal Dunin-Borkowski, Aram Rezikyan, and Michael Treacy. "Reducing Decoherence in Fluctuation Electron Microscopy." Microscopy and Microanalysis 27, S1 (July 30, 2021): 1776–77. http://dx.doi.org/10.1017/s1431927621006498.

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Voyles, P. M., and D. A. Muller. "Fluctuation Microscopy in the STEM." Microscopy and Microanalysis 7, S2 (August 2001): 226–27. http://dx.doi.org/10.1017/s1431927600027203.

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Анотація:

Fluctuation microscopy is an electron microscopy technique sensitive to medium-range order (MRO) in disordered materials. It has been applied to study amorphous germanium and silicon, leading to the conclusion that these materials exhibit more MRO than the conventional continuous random network model for their structure.As originally proposed by Treacy and Gibson, fluctuation microscopy utilizes mesoscopicresolution (1.5 nm) hollow-cone dark field (HCDF) imaging in a TEM. The normalized variance of such images,is a measure of the magnitude of fluctuations in the diffracted intensity from mesoscopic volumes of the sample and is sensitive to MRO via the three- and four-body atom distribution functions. Studying V as a function of the diffraction vector magnitude k gives information about the degree of MRO and the internal structure of ordered regions. V as a function of the inverse resolution Q gives information about the characteristic MRO length scale.

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Rezikyan, A., Z. Jibben, B. Rock, G. Zhao, and M. Treacy. "Simulation of Decoherence in Fluctuation Electron Microscopy." Microscopy and Microanalysis 19, S2 (August 2013): 1592–93. http://dx.doi.org/10.1017/s1431927613009951.

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Rezikyan, A., Z. Jibben, B. Rock, G. Zhao, and M. M. J. Treacy. "Simulation of Decoherence in Fluctuation Electron Microscopy." Microscopy and Microanalysis 20, S3 (August 2014): 150–51. http://dx.doi.org/10.1017/s1431927614002475.

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Li, J., and I. Anderson. "Rocking-Beam Variable Coherence Electron Microscopy: An Alternative Approach to Fluctuation Electron Microscopy." Microscopy and Microanalysis 12, S02 (July 31, 2006): 672–73. http://dx.doi.org/10.1017/s1431927606067316.

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Moriguchi, Sakumi, Hiroki Kurata, Seiji Isoda, and Takashi Kobayashi. "High Resolution Electron Microscopy in Organic Chemistry: 1-MEV Electron Microscope in Kyoto." Proceedings, annual meeting, Electron Microscopy Society of America 48, no. 1 (August 12, 1990): 140–41. http://dx.doi.org/10.1017/s0424820100179452.

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Since the epock-making results of 1.5 Å point-to-point resolution obtained with the 500 kV HREM in Kyoto in 1978, we are convinced of the validty of the high voltage electron microscope for the high resolution. However, in order to attain the higher resolution of about 1.3 Å, which is required to resolve a carbon-carbon distance in an aromatic hydrocarbon, there remain so many problems to be solved. In 1990 a new 1 MeV microscope with twin-tank (JE0L-ARM1000) in top-entry type has been installed in Kyoto university aiming to achieve such high resolution.The stability of high voltage is especially important for high resolution because the energy spread of the incident electron beam attenuates the phase transfer function and reduces the image contrast in higher spatial frequencies region. In order to suppress the high voltage fluctuation lower than 1 p. p. m. at 1 MeV and to monitor it, the twin-tank system is adopted, which has produced also satisfactory results in the previous high voltage electron microscopes in Kyoto. Fig. 1 shows the stability of the high tension measured at the top of the accerelating column of the new 1 MeV microscope. The fluctuation is evidently suppressed to less than 1 × 10-6 for five minutes long. The ripple monitored on a sincroscope is also less than 1 p.p.m. The chromatic abberation constant Cc is 3.6mm.

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Rezikyan, Aram, Zechariah J. Jibben, Bryan A. Rock, Gongpu Zhao, Franz A. M. Koeck, Robert F. Nemanich, and Michael M. J. Treacy. "Speckle Suppression by Decoherence in Fluctuation Electron Microscopy." Microscopy and Microanalysis 21, no. 6 (September 18, 2015): 1455–74. http://dx.doi.org/10.1017/s1431927615015135.

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AbstractWe compare experimental fluctuation electron microscopy (FEM) speckle data with electron diffraction simulations for thin amorphous carbon and silicon samples. We find that the experimental speckle intensity variance is generally more than an order of magnitude lower than kinematical scattering theory predicts for spatially coherent illumination.We hypothesize that decoherence, which randomizes the phase relationship between scattered waves, is responsible for the anomaly. Specifically,displacement decoherencecan contribute strongly to speckle suppression, particularly at higher beam energies. Displacement decoherence arises when the local structure is rearranged significantly by interactions with the beam during the exposure. Such motions cause diffraction speckle to twinkle, some of it at observable time scales.We also find that the continuous random network model of amorphous silicon can explain the experimental variance data if displacement decoherence and multiple scattering is included in the modeling. This may resolve the longstanding discrepancy between X-ray and electron diffraction studies of radial distribution functions, and conclusions reached from previous FEM studies.Decoherence likely affects all quantitative electron imaging and diffraction studies. It likely contributes to the so-called Stobbs factor, where high-resolution atomic-column image intensities are anomalously lower than predicted by a similar factor to that observed here.

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Li, Jing, X. Gu, and T. C. Hufnagel. "Using Fluctuation Microscopy to Characterize Structural Order in Metallic Glasses." Microscopy and Microanalysis 9, no. 6 (November 21, 2003): 509–15. http://dx.doi.org/10.1017/s1431927603030459.

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We have used fluctuation microscopy to reveal the presence of structural order on length scales of 1–2 nm in metallic glasses. We compare results of fluctuation microscopy measurements with high resolution transmission electron microscopy and electron diffraction observations on a series of metallic glass samples with differing degrees of structural order. The agreement between the fluctuation microscopy results and those of the other techniques is good. In particular, we show that the technique used to make thin specimens for electron microscopy affects the structure of the metallic glass, with ion thinning inducing more structural order than electropolishing. We also show that relatively minor changes in the composition of the alloy can have a significant effect on the medium-range order; this increased order is correlated with changes in mechanical behavior.

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Stratton, W. G., and P. M. Voyles. "Comparison of fluctuation electron microscopy theories and experimental methods." Journal of Physics: Condensed Matter 19, no. 45 (October 24, 2007): 455203. http://dx.doi.org/10.1088/0953-8984/19/45/455203.

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Більше джерел

Дисертації з теми "Fluctuation electron microscopy"

Maclean, Ewan Douglas William. "Valence losses at interfaces in aluminium alloys." Thesis, Connect to e-thesis, 2002. http://theses.gla.ac.uk/917/.

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Thesis (Ph.D.) -- University of Glasgow, 2002.
Ph.D. thesis submitted to the Department of Physics and Astronomy and the Department of Chemistry, University of Glasgow, 2002. Includes bibliographical references. Print version also available.

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Škvarenina, Ľubomír. "Charakterizácia tenkovrstvových solárnych článkov a analýza mikroštruktúrnych defektov." Doctoral thesis, Vysoké učení technické v Brně. Fakulta elektrotechniky a komunikačních technologií, 2021. http://www.nusl.cz/ntk/nusl-447549.

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Thin-film solar cells based on an absorber layer of chalcogenide compounds (CIGS, CdTe) are today among the most promising photovoltaic technologies due to their long-term ability to gain a foothold in mass commercial production as an alternative to conventional Si solar cells. Despite this success, the physical origin of the defects present in the thin films are still insufficiently elucidated, especially in the compounds of the chalcopyrite family Cu(In_{1x},Ga_{x})(S_{y},Se_{1y})_{2}. The research focuses on the identification and analysis of microstructural defects responsible for the electrical instability of chalcopyrite-based thin-film solar cells with a typical heterostructure arrangement ZnO:Al/i-ZnO/CdS/Cu(In,Ga)Se_{2}/Mo. The non-uniform polycrystalline nature of semiconductor materials in this complex multilayer structure requires a comprehensive analysis of electro-optical, structural and compositional properties associated with the actual morphology at the macroscopic, microscopic or even nanoscopic level. The observed predominant ohmic or non-ohmic current conduction in the dark transport characteristics was also reflected in the slope deviations of the excessive noise fluctuations, which were in the spectral domain exclusively in the form of flicker noise with dependency S_{i} ~ f^{1}. Spatially resolved electroluminescence based on stimulated photon emission by charge carriers injecting into the depletion region, not only showed a significantly inhomogeneous distribution of intensity in planar heterojunction under forward bias, but also revealed light emitting local spots in reverse bias due to a trap-assisted radiative recombination through the high density of defect states. Microscopic examination of the defect-related light emitting spots revealed rather extensive defective complexes with many interruptions through the layers, especially at the heterojunction CdS/Cu(In,Ga)Se_{2} interface. Besides, the high leakage current via these defective complexes subsequently led to a considerable local overheating, which caused a clearly observable structural and morphological changes, such as deviations in absorber layer stoichiometry due to Cu–In–Ga–Se segregation, Cu-rich and Ga-rich grains formation with an occurrence of Se-poor or Cu_{x}Se_{y} secondary phases regions, material redeposition accompanied by evaporation of ZnO:Al/i-ZnO/CdS layers together with the formation of Se structures on the surface around the defects. Within the research, analytical modelling of transport characteristics was implemented with parameters extraction of individual transport mechanisms to understand the non-ohmic shunt behaviour due to leakage current. In addition to the proper current path along the main heterojunction, the proposed model contains parasitic current pathways as a consequence of recombination-dominated charge transport or current conduction facilitated by multi-step tunnelling via high density of mid-gap defect states in the depletion region, ohmic leakage current caused by pinholes or low-resistance paths along grain boundaries in Cu(In,Ga)Se_{2}, or space-charge limited current due to metals diffusion from the ZnO:Al layer and grid Ag contacts through disruptions in i-ZnO/CdS layers.

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Mutta, Geeta Rani. "Propriétés structurales, optiques et électroniques des couches d’InN et hétérostructures riches en indium pour applications optoélectroniques." Caen, 2012. http://www.theses.fr/2012CAEN2013.

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Les semi-conducteurs nitrures (AlN, GaN, InN) focalisent une activité de recherche intense en raison de nombreuses applications comme les diodes électroluminescentes, les composants de puissance ou hyperfréquence. Dans cette recherche, nous avons abordé le travail sous deux angles: a) la conduction électrique dans les couches d'InN produites par croissance épitaxiale aux jets moléculaires assistée par plasma (PAMBE) et une recherche sur l'origine de la forte émission bleue dans les puits de quantiques d'InGaN/GaN. L'accumulation d'électron en surface dans les couches d'InN constitue une limitation importante pour la fabrication de composants. Au cours de ce travail, nous avons exploré l'utilisation des mesures de bruit de basse fréquence sur les couches d'InN et pu accéder à leur conductivité électrique en volume. L'étude des puits quantiques d'InGaN/GaN, obtenue par croissance épitaxiale aux jets moléculaires (MBE) ou épitaxie en phase vapeurs aux organométalliques (MOVPE) , a été effectuée par analyses de la microstructure par microscopie électronique en transmission (MET, HRTEM et STEM) en corrélation avec les propriétés optiques d'un grand nombre d'échantillons provenant de conditions de croissance différentes. Ce travail nous a permis d'acquérir une vision plus critique du rôle des conditions de fabrication et des paramètres comme la morphologie, les fluctuations de composition et la présence des défauts en V sur les explications actuellement avancées pour la forte efficacité d'émission dans les puits quantiques d' InGaN/GaN
The nitride semiconductors (AlN, GaN, InN) are subject to a large research effort due to their numerous applications, such as light emitting diodes, high power and high frequency components. Following the trend, the aim of this dissertation has been twofold: first, we have probed the bulk electrical conduction in InN layers, second, we investigated the origin of the high emission efficiency in InGaN/GaN Quantum Wells (QWs). The surface electron accumulation in InN layers is still an important limitation to device applications. W have explored this point using low frequency noise measurements on Plasma Assisted Molecular Beam Epitaxy (PAMBE) InN layers and we demonstrated that the bulk electrical conductivity of InN can be accessed. The investigation of quantum wells produced by molecular beam epitaxy (MBE) or matalorganic vapour phase epitaxy (MOVPE), has been carried out through microstructural analyses by transmission electron microscopy techniques(TEM, HRTEM, STEM) in correlation with optica properties on a large number of samples grown in different growth conditions. This experimental work has allowed us to obtain a critical view on the role of the growth conditions and such parameters as the well morphology, composition fluctuations, as well as the V shaped defects on the current explanations of high emission efficiency in InGaN/GaN QWs

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Liuolia, Vytautas. "Localization effects in ternary nitride semiconductors." Doctoral thesis, KTH, Optik, 2012. http://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-104290.

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InGaN based blue and near-ultraviolet light emitting diodes and laser diodes have been successfully commercialized for many applications such as general lighting, display backlighting and high density optical storage devices. Despite having a comparably high defect density, these devices are known for their efficient operation, which is attributed to localization in potential fluctuations preventing carriers from reaching the centers of nonradiative recombination. Nitride research is currently headed towards improving deep ultraviolet AlGaN and green InGaN emitters with higher Al and In molar fractions. The efficiency of these devices trails behind the blue counterparts as the carrier localization does not seem to aid in supressing nonradiative losses. In addition, the operation of ternary nitride heterostructure based devices is further complicated by the presence of large built-in electric fields. Although the problem can be ameliorated by growing structures in nonpolar or semipolar directions, the step from research to production still awaits. In this thesis, carrier dynamics and localization effects have been studied in three different nitride ternary compounds: AlGaN epitaxial layers and quantum wells with high Al content, nonpolar m-plane InGaN/GaN quantum wells and lattice matched AlInN/GaN heterostructures. The experimental methods of this work mainly consist of spectroscopy techniques such as time-resolved photoluminescence and differential transmission pump-probe measurements as well as spatial photoluminescence mapping by means of scanning near-field microscopy. The comparison of luminescence and differential transmission measurements has allowed estimating the localization depth in AlGaN quantum wells. Additionally, it has been demonstrated that the polarization degree of luminescence from m-InGaN quantum wells decreases as carriers diffuse to localization centers.What is more, dual-scale localization potential has been evidenced by near-field measurements in both AlGaN and m-InGaN. Larger scale potential fluctuation have been observed directly and the depth of nanoscopic localization has been estimated theoretically from the recorded linewidth of the near-field spectra. Lastly, efficient carrier transport has been observed through AlInN layer despite large alloy inhomogeneities evidenced by broad luminescence spectra and the huge Stokes shift. Inhomogeneous luminescence from the underlying GaN layer has been linked to the fluctuations of the built-in electric field at the AlInN/GaN interface.

QC 20121101

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Asano, Yasuhiro, Yuki Sawa, Yukio Tanaka, and Alexander A. Golubov. "Odd-frequency pairs and Josephson current through a strong ferromagnet." American Physical Society, 2007. http://hdl.handle.net/2237/11285.

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"Fluctuation Electron Microscopy of Amorphous and Polycrystalline Materials." Doctoral diss., 2015. http://hdl.handle.net/2286/R.I.29642.

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abstract: Fluctuation Electron Microscopy (FEM) has become an effective materials' structure characterization technique, capable of probing medium-range order (MRO) that may be present in amorphous materials. Although its sensitivity to MRO has been exercised in numerous studies, FEM is not yet a quantitative technique. The holdup has been the discrepancy between the computed kinematical variance and the experimental variance, which previously was attributed to source incoherence. Although high-brightness, high coherence, electron guns are now routinely available in modern electron microscopes, they have not eliminated this discrepancy between theory and experiment. The main objective of this thesis was to explore, and to reveal, the reasons behind this conundrum. The study was started with an analysis of the speckle statistics of tilted dark-field TEM images obtained from an amorphous carbon sample, which confirmed that the structural ordering is sensitively detected by FEM. This analysis also revealed the inconsistency between predictions of the source incoherence model and the experimentally observed variance. FEM of amorphous carbon, amorphous silicon and ultra nanocrystalline diamond samples was carried out in an attempt to explore the conundrum. Electron probe and sample parameters were varied to observe the scattering intensity variance behavior. Results were compared to models of probe incoherence, diffuse scattering, atom displacement damage, energy loss events and multiple scattering. Models of displacement decoherence matched the experimental results best. Decoherence was also explored by an interferometric diffraction method using bilayer amorphous samples, and results are consistent with strong displacement decoherence in addition to temporal decoherence arising from the electron source energy spread and energy loss events in thick samples. It is clear that decoherence plays an important role in the long-standing discrepancy between experimental FEM and its theoretical predictions.
Dissertation/Thesis
Doctoral Dissertation Physics 2015

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Nittala, Lakshminarayana. "Fluctuation electron microscopy investigations of medium range order in a-Si and a-Si:H thin films /." 2006. http://gateway.proquest.com/openurl?url_ver=Z39.88-2004&rft_val_fmt=info:ofi/fmt:kev:mtx:dissertation&res_dat=xri:pqdiss&rft_dat=xri:pqdiss:3223681.

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Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 2006.
Source: Dissertation Abstracts International, Volume: 67-07, Section: B, page: 4046. Adviser: John R. Abelson. Includes bibliographical references. Available on microfilm from Pro Quest Information and Learning.

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Haberl, Bianca. "Structural Characterization of Amorphous Silicon." Phd thesis, 2010. http://hdl.handle.net/1885/8937.

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The structure of amorphous silicon (a-Si) has attracted wide interest over the recent decades. This substantial interest is twofold. Firstly, a-Si has many, highly significant, technological applications. Secondly, physically it is a fundamentally interesting material which has been regarded as a model system of a covalently bonded continuous random network (CRN). Such a CRN is a random network in which each atom has full four-fold coordination as the only specific structural feature. More recently, improvement of techniques has allowed greater insight into the structural properties of a-Si. Intriguing deviations, not only from the ideal CRN, but especially between different forms of a-Si have been observed. However, to date it remains unclear to what extent the formation method of a-Si influences its structural order. Another critically important parameter in the nature of a-Si is its thermal history. For example, a-Si formed by ion-implantation undergoes structural relaxation – or short-range ordering – upon thermal annealing to a new state that is close to an ideal CRN. It remains unclear however, if other forms of a-Si undergo structural relaxation to the same degree. Thus, despite its widespread use and decades of research, the exact nature of a-Si is still not fully understood and this thesis addresses this topic. Different forms of a-Si was prepared by deposition techniques, rapid quenching from the melt and solid-state amorphization. These different forms were investigated in their as-prepared state as well as in their thermally annealed. A combination of techniques was used, namely nanoindentation, electron-energy-loss spectroscopy, Raman microspectroscopy, electron diffraction and fluctuation electron microscopy. All forms of a-Si were first probed for their uniformity. Films prepared by plasma-enhanced chemical vapour deposition and by rapid quenching from the melt were found to contain voids and nanocrystals which prevented the study of their structural properties. More uniform films prepared by magnetron-sputtering, ion-implantation and the so-called pressure-induced (PI) a-Si however, were studied in depth for their structural properties. Each as-prepared form of a-Si was found to have a unique network with very different structural properties. The magnetron-sputtered a-Si was observed to have significant microstructure. The pure ion-implanted a-Si however, is free of such microstructure although some inhomogeneities are clearly present within the network. Interestingly, PI a-Si possesses very little order on the entire length-scale. Only uniform, pure forms of a-Si without any microstructure undergo structural relaxation upon annealing. In the case of the other forms of a-Si, the presence of voids and nanopores seems to prevent the formation of a more ideal CRN. Intriguingly, for the pure cases however, the structural relaxation results in essentially the same properties for both networks over the entire length-scale. These findings were used to build a framework for the understanding of the structure of a-Si. Such a framework is a first step towards more realistic structural models since without detailed experimental data no assertive validation of any model is possible. Therefore, this framework is expected to advance the understanding of the structure of a-Si as well as other covalently bonded amorphous semiconductors.

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Hu, Cheng. "Transformation of carbonaceous skeleton during the activation and thermal annealing of nanoporous carbons." Thesis, 2015. http://hdl.handle.net/2440/99031.

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Nanoporous carbons (NPCs) are carbonaceous solids that contain rich nanometresized pores. NPCs play significant roles in many applications that help address today’s energy and environmental issues. There is increasing evidence that whilst the pore structure of NPCs plays a central role in many of these applications, the carbonaceous skeleton structure also plays a critical role. The later has, however, attracted far less attention. This work is particularly concerned with understanding the change in the carbonaceous skeleton of non-graphitizing NPCs during processing. Two processes were considered: activation and thermal annealing. In order to minimise uncertainty in the analysis concerned with elucidating the change in the skeleton, a method for producing NPC particles of spatially homogeneous character was first developed. Using a novel assessment methodology, it was shown that such particles can be produced via use of either a cyclic application of oxygen chemisorption at 250ºC followed by its removal at 800ºC in Ar, or through CO₂ activation at 1% per hour conversion rate. This work is also of significant industrial importance, as it provides an improved basis for optimising the activation process for a desired carbon performance. In the second body of this work, a multi-method approach was adopted to elucidate the change in the carbonaceous skeleton of a NPC along its activation pathway. Helium pycnometry picked up skeleton densification during activation, and X-ray diffraction based radial distribution function analysis, electron energy loss spectroscopy spectrum imaging, and fluctuation electron microscopy collectively suggest that the skeleton densifies via an in-plane growth of sp² carbon out to the medium range without commensurate increase in order normal to the plane. TEM images of the carbon before and after activation suggest this ‘graphenization’ may come through removal of the more reactive carbon, breaking constraining crosslinks and creating space that allows the remaining carbon material to migrate in an annealing-like process. In the final part of the work, multi-wavelength Raman spectroscopy was employed to study the change in the solid skeleton of a NPC along a thermal annealing pathway. Deconvolutions of spectra using G, D, D’, A and TPA bands – many of which relate to the defective nature of the carbon skeleton – were validated against their known energy dispersion. The D band to G band intensity ratio, Iᴅ/Iɢ, was separated into two parts – that related to graphitic cluster size and that relates to inplane defects, which allows a calculation of defect density. This work revealed that annealing below 1600°C essentially involves a reduction of in-plane defects with a minor growth in the extent of cluster size. Annealing beyond this temperature sees the extent of the clusters take off as the in-plane defect density approaches zero. The work reported in this thesis has provided both new understanding for a particular set of NPC materials and processes as well as new methodologies and approaches. Although the focus was on a small number of carbons and processes, the methodologies developed here are quite general and, therefore, lay the foundations for their application more widely.
Thesis (Ph.D.) -- University of Adelaide, School of Chemical Engineering, 2015

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Частини книг з теми "Fluctuation electron microscopy"

Voyles, Paul M., Stephanie Bogle, and John R. Abelson. "Fluctuation Microscopy in the STEM." In Scanning Transmission Electron Microscopy, 725–56. New York, NY: Springer New York, 2010. http://dx.doi.org/10.1007/978-1-4419-7200-2_18.

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Barth, S., F. N. Gygax, B. Hitti, E. Lippelt, H. R. Ott, A. Schenck, and Z. Fisk. "Microscopic Study of Magnetism in Heavy-Electron U2Zn17 by μ+SR." In Theoretical and Experimental Aspects of Valence Fluctuations and Heavy Fermions, 361–64. Boston, MA: Springer US, 1987. http://dx.doi.org/10.1007/978-1-4613-0947-5_44.

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"Indium fluctuations analysis inside loGaN quantum wells by scanning transmission." In Electron Microscopy and Analysis 2003, 145–48. CRC Press, 2004. http://dx.doi.org/10.1201/9781482269130-34.

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Qian, Xin, Changfu Li, Junfeng Sun, and Dan Wu. "Microstructure of TB6 Titanium Alloy Fabricated by Laser Deposition Manufacturing." In Advances in Transdisciplinary Engineering. IOS Press, 2022. http://dx.doi.org/10.3233/atde221148.

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Titanium alloy is a kind of difficult-to-machine material, which needs to seek an efficient processing method. In this paper, the deposition samples of TB6 titanium alloy were prepared by laser deposition manufacturing. The internal microstructure of the as-deposited was analyzed by Optical Microscope(OM) and Scanning Electron Microscope(SEM). The formation mechanism of interlaminar bands and the variation law of microhardness were studied. The microstructure of TB6 titanium alloy prepared by laser deposition is composed of most equiaxed and a small part of original β grains elongated along the deposition direction and approximately ellipsoidal. The original β grains are mainly composed of primary α phase(αp), grain boundary α phase(αGB) and matrix β phase. The temperature fluctuation between the deposition layers in the laser deposition process leads to the change of αp phase size, which forms the layer band distribution with different contrasts.

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Potin, V., E. Hahn, A. Rosenauer, D. Gerthsen, J. Off, and F. Scholz. "Determination of indium composition fluctuations in InGaN/GaN quantum wells by quantitative high-resolution electron microscopy." In Microscopy of Semiconducting Materials 2001, 25–28. CRC Press, 2018. http://dx.doi.org/10.1201/9781351074629-5.

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Kresin, Vladimir Z., Sergei G. Ovchinnikov, and Stuart A. Wolf. "Properties: Spectroscopy." In Superconducting State, 126–200. Oxford University Press, 2021. http://dx.doi.org/10.1093/oso/9780198845331.003.0003.

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This chapter focuses on the spectroscopy of the superconducting state. Various manifestations of macroscopic quantisation are described, including flux quantisation, the Josephson effect, vortices, and the Little–Parks effect. The Ginzburg–Landau theory and its microscopic derivation are presented. An interesting new direction, the search for the lossless ground current state, undergoes an intensive development. If the electronic density of states contains several peaks, it manifests as a multigap structure. Impurity scattering and, especially, the pair-breaking effect can drastically affect the spectrum and lead to gapless superconductivity. Pairing can be induced by the proximity effect (S–N contact). The isotope effect is the signature of the pairing mechanism, but it can be affected by Coulomb terms, magnetic impurities, and polaron formation. The study of fluctuations forms a large area of research. Fluctuations affect the behaviour of heat capacity and nuclear magnetic resonance relaxation, lead to peculiar paraconductivity, and so on.

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Тези доповідей конференцій з теми "Fluctuation electron microscopy"

Gong, Yunye, and Peter C. Doerschuk. "Determining fluctuation in bio-nanomachines from electron microscopy images." In 2015 IEEE International Conference on Image Processing (ICIP). IEEE, 2015. http://dx.doi.org/10.1109/icip.2015.7350800.

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Orekhov, Andrey. "Unravelling nanoscale structure of amorphous ZrCu thin metallic glass films using advanced 4D STEM and fluctuation electron microscopy." In European Microscopy Congress 2020. Royal Microscopical Society, 2021. http://dx.doi.org/10.22443/rms.emc2020.1163.

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Ruppeiner, George. "Entropy fluctuations reveal microscopic interactions." In 5th International Electronic Conference on Entropy and Its Applications. Basel, Switzerland: MDPI, 2019. http://dx.doi.org/10.3390/ecea-5-06709.

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Ramonas, Mindaugas. "Microscopic modeling of fluctuations in polar semiconductors with high density electron gas." In 2017 International Conference on Noise and Fluctuations (ICNF). IEEE, 2017. http://dx.doi.org/10.1109/icnf.2017.7985939.

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Nakanishi, Takahiro, Ken Suzuki, and Hideo Miura. "Variation of the Strength of Grains and Grain Boundaries Caused by the Fluctuation of Their Crystallinity." In ASME 2016 International Mechanical Engineering Congress and Exposition. American Society of Mechanical Engineers, 2016. http://dx.doi.org/10.1115/imece2016-67557.

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The variation of the strength of a grain and a grain boundary was measured by a micro tensile test system fabricated in an electron microscope. A micro-scale beam structure was fabricated from a single-crystalline silicon wafer and a fine nano-scale sample cut from a thin film using a focused ion beam was attached to the center of the beam by deposition of tungsten in the microscope. The other end was attached to a micro probe similarly. Finally, the micro probe was activated to pull the sample and the deformation of the sample was observed by a scanning electron microscope. The fracture strength of a bicrystal sample was measured by detecting the deflection of the beam at the breakage of the sample. The crystallinity of both a grain and a grain boundary was quantitatively evaluated by using electron back-scatter diffraction analysis from the viewpoint of the change of the order of atom arrangement in them. It was found that the strength of a grain and a grain boundary varied clearly depending on their crystallinity. In addition, there was a critical value of the crystallinity at which the fracture mode of a polycrystalline material changed from intergranular fracture to transgranular fracture.

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Stellari, Franco, Ernest Y. Wu, Takashi Ando, Martin M. Frank, and Peilin Song. "Photon Emission Microscopy of HfO2 ReRAM Cells." In ISTFA 2021. ASM International, 2021. http://dx.doi.org/10.31399/asm.cp.istfa2021p0115.

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Abstract In this paper, we discuss the use of spontaneous photon emission microscopy (PEM) for observing filaments formed in HfO2 resistive random access memory (ReRAM) cells. The setup employs a CCD and an InGaAs camera, revealing photon emissions in both forward (set) and reverse (reset) bias conditions. Photon emission intensity is modeled using an electric-field equation and inter-filament distance and density are determined assuming a uniform spatial distribution. The paper also discusses the use of high frame rate and prolonged photon emission measurements to assess lifetime and reliability and explains how single filament fluctuations and multiple filaments in a single cell were observed for the first time.

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Koslowski, B. "1/f noise in scanning tunneling microscopy." In The sixth Van der Zielsymposium on quantum 1/f noise and other low frequency fluctuations in electronic devices. AIP, 1996. http://dx.doi.org/10.1063/1.50879.

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Koslowski, B., C. Baur, R. Möller, and K. Dransfeld. "Atomic scale variation of tunneling current noise on GaAs(110) measured by scanning tunneling microscopy." In Quantum 1/f noise and other low frequency fluctuations in electronic devices. AIP, 1992. http://dx.doi.org/10.1063/1.44364.

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Smejkal, Petr, Blanka Vlckova, Ioana Pavel, Martin Moskovits, Magdalena Sladkova, Karolina Siskova, and Miroslav Slouf. "Nanocomposites With Strong Optical Resonances: Silver Nanoparticles-Organic Molecules Systems." In ASME 2008 2nd Multifunctional Nanocomposites and Nanomaterials International Conference. ASMEDC, 2008. http://dx.doi.org/10.1115/mn2008-47029.

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The ability of selected molecular species to link Ag nanoparticles into dimers and/or small aggregates has been tested. Dimercaptocarborane and ethidium bromide have been shown to link Ag nanoparticles via their bonding to Ag nanoparticle surface probably by the two strongly argentophilic groups in para-positions. Alternatively, dimers and small aggregates were assembled through an electrostatic interaction between negatively charged citrate-modified and positively charged polylysine-modified Ag nanoparticles, and a subsequent incorporation of 5, 10, 15, 20-tetrakis(4-sulphonato-phenyl)porphine (TSPP) into such preprepared nanoobjects has been probed by SERRS (surface-enhanced resonance Raman scattering). Formation of dimers and small aggregates has been established by TEM (transmission electron microscopy) and SEM (scanning electron microscopy). SE(R)RS spectral measurements from specific locations of samples containing molecularly-linked dimers and aggregates have shown temporal fluctuations (blinking) of the SE(R)RS signal, which indicates, that the signal likely originates from molecules located in the strong, nanoscale localized optical fields dubbed hot spots. In addition to that, characteristic bands of graphitic carbon were observed in the spectra and their intensities (together with the spectral background intensities) strongly varied with time and from one spectrum to another. One of the possible explanations of these observations is a photochemical and/or thermal decomposition of the molecules located in hot spots combined with diffusion of unperturbed molecules into hot spots.

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Zhachuk, Ruslan, Dmitry Rogilo, Aleksey Petrov, Dmitry Sheglov, Aleksandr Latyshev, Fabio Ronci, and Stefano Colonna. "ATOMIC STRUCTURE OF A SINGLE STEP AND DYNAMICS OF Sn ADATOMS ON THE Si(111)- v3 ? v3-Sn SURFACE." In Mathematical modeling in materials science of electronic component. LCC MAKS Press, 2021. http://dx.doi.org/10.29003/m2486.mmmsec-2021/108-111.

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The atomic structure of single steps on the Si(111)- 3 3 ? -Sn surface and the dynamics of Sn adatoms in the vicinity of these steps were studied. The work was performed using scanning tunneling microscopy (STM) and ab initio calculations based on the density functional theory. The atomic structure model of the single steps consisting of Sn atomic chains along the steps was developed. This structure leads to the formation of potential double-wells near the steps acting as traps for Sn atoms and explains the fluctuating tunneling current recorded in these areas.

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Звіти організацій з теми "Fluctuation electron microscopy"

Treacy, Michael M. J. Structural Studies of Amorphous Materials by Fluctuation Electron Microscopy. Office of Scientific and Technical Information (OSTI), June 2018. http://dx.doi.org/10.2172/1440910.

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Voyles, P. M., and J. R. Abelson. Medium-Range Order in Amorphous Silicon Measured by Fluctuation Electron Microscopy: Final Report, 23 June 1999--23 August 2002. Office of Scientific and Technical Information (OSTI), October 2003. http://dx.doi.org/10.2172/15004839.

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