Статті в журналах з теми "Floating Gate Memory"
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Rajput, Renu, and Rakesh Vaid. "Flash memory devices with metal floating gate/metal nanocrystals as the charge storage layer: A status review." Facta universitatis - series: Electronics and Energetics 33, no. 2 (2020): 155–67. http://dx.doi.org/10.2298/fuee2002155r.
Повний текст джерелаLi, Bei, Jianlin Liu, G. F. Liu, and J. A. Yarmoff. "Ge∕Si heteronanocrystal floating gate memory." Applied Physics Letters 91, no. 13 (September 24, 2007): 132107. http://dx.doi.org/10.1063/1.2793687.
Повний текст джерелаAl-shawi, Amjad, Maysoon Alias, Paul Sayers, and Mohammed Fadhil Mabrook. "Improved Memory Properties of Graphene Oxide-Based Organic Memory Transistors." Micromachines 10, no. 10 (September 25, 2019): 643. http://dx.doi.org/10.3390/mi10100643.
Повний текст джерелаNoor, Fatimah Arofiati, Gilang Mardian Kartiwa, and Muhammad Amin Sulthoni. "Studi Elektrostatik Elektroda Runcing dan Aplikasinya pada Perangkat Floating Gate Memory." POSITRON 11, no. 1 (October 15, 2021): 1. http://dx.doi.org/10.26418/positron.v11i1.44881.
Повний текст джерелаLingalugari, Murali, Evan Heller, Barath Parthasarathy, John Chandy, and Faquir Jain. "Quantum Dot Floating Gate Nonvolatile Random Access Memory Using Ge Quantum Dot Channel for Faster Erasing." International Journal of High Speed Electronics and Systems 27, no. 01n02 (March 2018): 1840006. http://dx.doi.org/10.1142/s0129156418400062.
Повний текст джерелаZhang, Pengfei, Dong Li, Mingyuan Chen, Qijun Zong, Jun Shen, Dongyun Wan, Jingtao Zhu, and Zengxing Zhang. "Floating-gate controlled programmable non-volatile black phosphorus PNP junction memory." Nanoscale 10, no. 7 (2018): 3148–52. http://dx.doi.org/10.1039/c7nr08515j.
Повний текст джерелаLee, Boong-Joo. "Operating characteristics of Floating Gate Organic Memory." Journal of the Korea Academia-Industrial cooperation Society 15, no. 8 (August 31, 2014): 5213–18. http://dx.doi.org/10.5762/kais.2014.15.8.5213.
Повний текст джерелаPark, Byoungjun, Kyoungah Cho, Sungsu Kim, and Sangsig Kim. "Transparent nano-floating gate memory on glass." Nanotechnology 21, no. 33 (July 26, 2010): 335201. http://dx.doi.org/10.1088/0957-4484/21/33/335201.
Повний текст джерелаCellere, G., P. Pellati, A. Chimenton, J. Wyss, A. Modelli, L. Larcher, and A. Paccagnella. "Radiation effects on floating-gate memory cells." IEEE Transactions on Nuclear Science 48, no. 6 (2001): 2222–28. http://dx.doi.org/10.1109/23.983199.
Повний текст джерелаLee, Jang-Sik. "Review paper: Nano-floating gate memory devices." Electronic Materials Letters 7, no. 3 (September 2011): 175–83. http://dx.doi.org/10.1007/s13391-011-0901-5.
Повний текст джерелаJang, Sukjae, Euyheon Hwang, Jung Heon Lee, Ho Seok Park, and Jeong Ho Cho. "Graphene-Graphene Oxide Floating Gate Transistor Memory." Small 11, no. 3 (August 28, 2014): 311–18. http://dx.doi.org/10.1002/smll.201401017.
Повний текст джерелаNagashio, Kosuke. "(Invited, Digital Presentation) 50 Ns Ultrafast Memory Operation in 2D Heterostructured Non-Volatile Memory Device." ECS Meeting Abstracts MA2022-01, no. 10 (July 7, 2022): 785. http://dx.doi.org/10.1149/ma2022-0110785mtgabs.
Повний текст джерелаChen, Yi-Yueh, Feng-Ming Lee, Yu-Yu Lin, Chih-Hsiung Lee, Wei-Chen Chen, Che-Kai Shu, Su-Jien Lin, Shou-Yi Chang, and Chih-Yuan Lu. "New n-p Junction Floating Gate to Enhance the Operation Performance of a Semiconductor Memory Device." Materials 15, no. 10 (May 19, 2022): 3640. http://dx.doi.org/10.3390/ma15103640.
Повний текст джерелаSasaki, Taro, Keiji Ueno, Takashi Taniguchi, Kenji Watanabe, Tomonori Nishimura, and Kosuke Nagashio. "Understanding the Memory Window Overestimation of 2D Materials Based Floating Gate Type Memory Devices by Measuring Floating Gate Voltage." Small 16, no. 47 (November 2020): 2004907. http://dx.doi.org/10.1002/smll.202004907.
Повний текст джерелаPei, Yan Li, Tatsuro Hiraki, Toshiya Kojima, Takafumi Fukushima, Mitsumasa Koyanagi, and Tetsu Tanaka. "Energy Band Engineering of Metal Nanodots for High Performance Nonvolatile Memory Application." Key Engineering Materials 470 (February 2011): 140–45. http://dx.doi.org/10.4028/www.scientific.net/kem.470.140.
Повний текст джерелаJang, Sukjae, Euyheon Hwang, and Jeong Ho Cho. "Graphene nano-floating gate transistor memory on plastic." Nanoscale 6, no. 24 (2014): 15286–92. http://dx.doi.org/10.1039/c4nr04117h.
Повний текст джерелаChen, C. D., Y. Nakamura, and J. S. Tsai. "Aluminum single-electron nonvolatile floating gate memory cell." Applied Physics Letters 71, no. 14 (October 6, 1997): 2038–40. http://dx.doi.org/10.1063/1.119780.
Повний текст джерелаSnyder, E. S., P. J. McWhorter, T. A. Dellin, and J. D. Sweetman. "Radiation response of floating gate EEPROM memory cells." IEEE Transactions on Nuclear Science 36, no. 6 (1989): 2131–39. http://dx.doi.org/10.1109/23.45415.
Повний текст джерелаHasaneen, El-Sayed, E. Heller, R. Bansal, W. Huang, and F. Jain. "Modeling of nonvolatile floating gate quantum dot memory." Solid-State Electronics 48, no. 10-11 (October 2004): 2055–59. http://dx.doi.org/10.1016/j.sse.2004.05.073.
Повний текст джерелаMartins, Rodrigo, P. Barquinha, L. Pereira, N. Correia, G. Gonçalves, I. Ferreira, and E. Fortunato. "Selective floating gate non-volatile paper memory transistor." physica status solidi (RRL) - Rapid Research Letters 3, no. 9 (October 9, 2009): 308–10. http://dx.doi.org/10.1002/pssr.200903268.
Повний текст джерелаWang, Shuopei, Congli He, Jian Tang, Xiaobo Lu, Cheng Shen, Hua Yu, Luojun Du, et al. "New Floating Gate Memory with Excellent Retention Characteristics." Advanced Electronic Materials 5, no. 4 (January 18, 2019): 1800726. http://dx.doi.org/10.1002/aelm.201800726.
Повний текст джерелаSun, Sheng, and Shengdong Zhang. "Nanoparticle floating-gate transistor memory based on solution-processed ambipolar organic semiconductor." E3S Web of Conferences 185 (2020): 04071. http://dx.doi.org/10.1051/e3sconf/202018504071.
Повний текст джерелаDolicanin, Edin. "Gamma ray effects on flash memory cell arrays." Nuclear Technology and Radiation Protection 27, no. 3 (2012): 284–89. http://dx.doi.org/10.2298/ntrp1203284d.
Повний текст джерелаGan, Lu-Rong, Ya-Rong Wang, Lin Chen, Hao Zhu, and Qing-Qing Sun. "A Floating Gate Memory with U-Shape Recessed Channel for Neuromorphic Computing and MCU Applications." Micromachines 10, no. 9 (August 23, 2019): 558. http://dx.doi.org/10.3390/mi10090558.
Повний текст джерелаJang, Sukjae, Euyheon Hwang, Jung Heon Lee, Ho Seok Park, and Jeong Ho Cho. "Memory: Graphene-Graphene Oxide Floating Gate Transistor Memory (Small 3/2015)." Small 11, no. 3 (January 2015): 261. http://dx.doi.org/10.1002/smll.201570014.
Повний текст джерелаZHANG, YUEGANG. "CARBON NANOTUBE BASED NONVOLATILE MEMORY DEVICES." International Journal of High Speed Electronics and Systems 16, no. 04 (December 2006): 959–75. http://dx.doi.org/10.1142/s0129156406004107.
Повний текст джерелаGong, Liang, Rui Ming Li, Qi Xiong, and Shao Hua Zhou. "The Equivalent Circuit Model of Floating-Gate Single-Electron Memorizer." Applied Mechanics and Materials 416-417 (September 2013): 1721–25. http://dx.doi.org/10.4028/www.scientific.net/amm.416-417.1721.
Повний текст джерелаHu, Hongsheng, Zhongyuan Ma, Xinyue Yu, Tong Chen, Chengfeng Zhou, Wei Li, Kunji Chen, Jun Xu, and Ling Xu. "Controlling the Carrier Injection Efficiency in 3D Nanocrystalline Silicon Floating Gate Memory by Novel Design of Control Layer." Nanomaterials 13, no. 6 (March 7, 2023): 962. http://dx.doi.org/10.3390/nano13060962.
Повний текст джерелаChen, Hongye, Ye Zhou, and Su‐Ting Han. "Recent advances in metal nanoparticle‐based floating gate memory." Nano Select 2, no. 7 (January 29, 2021): 1245–65. http://dx.doi.org/10.1002/nano.202000268.
Повний текст джерелаJiyan Y. Dai and Pui-Fai Lee. "Recent Patents in Semiconductor Nanocluster Floating Gate Flash Memory." Recent Patents on Nanotechnology 1, no. 2 (June 1, 2007): 91–97. http://dx.doi.org/10.2174/187221007780859636.
Повний текст джерелаKim, H. S., B. J. Lee, and P. K. Shin. "Floating Gate Organic Memory Device with Tunneling Layer's Thickness." Journal of the Korean Vacuum Society 21, no. 6 (November 30, 2012): 354–61. http://dx.doi.org/10.5757/jkvs.2012.21.6.354.
Повний текст джерелаLi, Bei, and Jianlin Liu. "Nonvolatile Memory With Ge/Si Heteronanocrystals as Floating Gate." IEEE Transactions on Nanotechnology 10, no. 2 (March 2011): 284–90. http://dx.doi.org/10.1109/tnano.2009.2039488.
Повний текст джерелаChan, K. C., P. F. Lee, and J. Y. Dai. "Mesoscopic phenomena in Au nanocrystal floating gate memory structure." Applied Physics Letters 95, no. 11 (September 14, 2009): 113109. http://dx.doi.org/10.1063/1.3229885.
Повний текст джерелаChen, F. Y., Y. K. Fang, M. J. Sun, and Jiann‐Ruey Chen. "A nonvolatile ferroelectric memory device with a floating gate." Applied Physics Letters 69, no. 21 (November 18, 1996): 3275–76. http://dx.doi.org/10.1063/1.118034.
Повний текст джерелаBleiker, C., and H. Melchior. "A four-state EEPROM using floating-gate memory cells." IEEE Journal of Solid-State Circuits 22, no. 3 (June 1987): 460–63. http://dx.doi.org/10.1109/jssc.1987.1052751.
Повний текст джерелаYin, Cheng-Kuan, Ji-Chel Bea, Youn-Gi Hong, Takafumi Fukushima, Masanobu Miyao, Kenji Natori, and Mitsumasa Koyanagi. "New Magnetic Flash Memory with FePt Magnetic Floating Gate." Japanese Journal of Applied Physics 45, no. 4B (April 25, 2006): 3217–21. http://dx.doi.org/10.1143/jjap.45.3217.
Повний текст джерелаWang, Wei, Jiawei Shi, and Dongge Ma. "Organic Thin-Film Transistor Memory With Nanoparticle Floating Gate." IEEE Transactions on Electron Devices 56, no. 5 (May 2009): 1036–39. http://dx.doi.org/10.1109/ted.2009.2016031.
Повний текст джерелаWang, Wei, Dongge Ma, and Qiang Gao. "Organic thin-film transistor memory with Ag floating-gate." Microelectronic Engineering 91 (March 2012): 9–13. http://dx.doi.org/10.1016/j.mee.2011.11.006.
Повний текст джерелаCarley, L. R. "Trimming analog circuits using floating-gate analog MOS memory." IEEE Journal of Solid-State Circuits 24, no. 6 (1989): 1569–75. http://dx.doi.org/10.1109/4.44992.
Повний текст джерелаYamauchi, Yoshimitsu, Yoshinari Kamakura, and Toshimasa Matsuoka. "Scalable Virtual-Ground Multilevel-Cell Floating-Gate Flash Memory." IEEE Transactions on Electron Devices 60, no. 8 (August 2013): 2518–24. http://dx.doi.org/10.1109/ted.2013.2270565.
Повний текст джерелаBagatin, Marta, and Simone Gerardin. "Soft errors in floating gate memory cells: A review." Microelectronics Reliability 55, no. 1 (January 2015): 24–30. http://dx.doi.org/10.1016/j.microrel.2014.10.016.
Повний текст джерелаZhu, Yan, Dengtao Zhao, Ruigang Li, and Jianlin Liu. "Threshold voltage shift of heteronanocrystal floating gate flash memory." Journal of Applied Physics 97, no. 3 (February 2005): 034309. http://dx.doi.org/10.1063/1.1847700.
Повний текст джерелаKuruoğlu, Furkan, Murat Çalışkan, Merih Serin, and Ayşe Erol. "Well-ordered nanoparticle arrays for floating gate memory applications." Nanotechnology 31, no. 21 (March 9, 2020): 215203. http://dx.doi.org/10.1088/1361-6528/ab7043.
Повний текст джерелаCellere, G., L. Larcher, A. Paccagnella, A. Visconti, and M. Bonanomi. "Radiation induced leakage current in floating gate memory cells." IEEE Transactions on Nuclear Science 52, no. 6 (December 2005): 2144–52. http://dx.doi.org/10.1109/tns.2005.860725.
Повний текст джерелаFujita, O., and Y. Amemiya. "A floating-gate analog memory device for neural networks." IEEE Transactions on Electron Devices 40, no. 11 (1993): 2029–35. http://dx.doi.org/10.1109/16.239745.
Повний текст джерелаMakwana, J. J., and D. K. Schroder. "Nonvolatile floating-gate memory programming enhancement using well bias." IEEE Transactions on Electron Devices 53, no. 2 (February 2006): 258–62. http://dx.doi.org/10.1109/ted.2005.861723.
Повний текст джерелаLisoni, Judit G., Laurent Breuil, Pieter Blomme, Johan Meersschaut, Andreas Bergmaier, Günther Dollinger, Geert Van den bosch, and Jan Van Houdt. "Material selection for hybrid floating gate NAND memory applications." physica status solidi (a) 213, no. 2 (January 28, 2016): 237–44. http://dx.doi.org/10.1002/pssa.201532829.
Повний текст джерелаQIN, Shi-xian, Chao MA, Jun-jie XING, Bo-wen LI, and Guo-cheng ZHANG. "Transparent organic memory based on quantum dots floating gate." Chinese Journal of Liquid Crystals and Displays 38, no. 7 (2023): 919–25. http://dx.doi.org/10.37188/cjlcd.2023-0041.
Повний текст джерелаYoon, Jong-Hwan. "Memory properties of Al-based nanoparticle floating gate for nonvolatile memory applications." Journal of the Korean Physical Society 61, no. 5 (September 2012): 799–802. http://dx.doi.org/10.3938/jkps.61.799.
Повний текст джерелаJin, Risheng, Jin Wang, Keli Shi, Beibei Qiu, Lanchao Ma, Shihua Huang, and Zhengquan Li. "Multilevel storage and photoinduced-reset memory by an inorganic perovskite quantum-dot/polystyrene floating-gate organic transistor." RSC Advances 10, no. 70 (2020): 43225–32. http://dx.doi.org/10.1039/d0ra08021g.
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