Статті в журналах з теми "Flash Memory Device"
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Abdullah, Dhuha, and Reyath Mahmood. "Design Flash Memory Programmer Device." AL-Rafidain Journal of Computer Sciences and Mathematics 3, no. 1 (July 1, 2006): 55–83. http://dx.doi.org/10.33899/csmj.2006.164045.
Повний текст джерелаAlahmadi, Abdulhadi, and Tae Sun Chung. "RSLSP: An Effective Recovery Scheme for Flash Memory Leveraging Shadow Paging." Electronics 11, no. 24 (December 10, 2022): 4126. http://dx.doi.org/10.3390/electronics11244126.
Повний текст джерелаHan, Hoonhee, Seokmin Jang, Duho Kim, Taeheun Kim, Hyeoncheol Cho, Heedam Shin, and Changhwan Choi. "Memory Characteristics of Thin Film Transistor with Catalytic Metal Layer Induced Crystallized Indium-Gallium-Zinc-Oxide (IGZO) Channel." Electronics 11, no. 1 (December 24, 2021): 53. http://dx.doi.org/10.3390/electronics11010053.
Повний текст джерелаKostadinov, Hristo, and Nikolai Manev. "Integer Codes Correcting Asymmetric Errors in Nand Flash Memory." Mathematics 9, no. 11 (June 1, 2021): 1269. http://dx.doi.org/10.3390/math9111269.
Повний текст джерелаTsoukalas, Dimitris, and Emanuele Verrelli. "Inorganic Nanoparticles for either Charge Storage or Memristance Modulation." Advances in Science and Technology 77 (September 2012): 196–204. http://dx.doi.org/10.4028/www.scientific.net/ast.77.196.
Повний текст джерелаXu, Guangxia, Lingling Ren, and Yanbing Liu. "Flash-Aware Page Replacement Algorithm." Mathematical Problems in Engineering 2014 (2014): 1–11. http://dx.doi.org/10.1155/2014/136246.
Повний текст джерелаPoudel, Prawar, Biswajit Ray, and Aleksandar Milenkovic. "Microcontroller Fingerprinting Using Partially Erased NOR Flash Memory Cells." ACM Transactions on Embedded Computing Systems 20, no. 3 (April 2021): 1–23. http://dx.doi.org/10.1145/3448271.
Повний текст джерелаHuang, Bai Yi. "A New Write Caching Algorithm for Solid State Disks." Advanced Materials Research 341-342 (September 2011): 700–704. http://dx.doi.org/10.4028/www.scientific.net/amr.341-342.700.
Повний текст джерелаWang, Lei, CiHui Yang, Jing Wen, and Shan Gai. "Emerging Nonvolatile Memories to Go Beyond Scaling Limits of Conventional CMOS Nanodevices." Journal of Nanomaterials 2014 (2014): 1–10. http://dx.doi.org/10.1155/2014/927696.
Повний текст джерелаJung, Sang-Goo, and Jong-Ho Lee. "Flash Memory Device with `I' Shape Floating Gate for Sub-70 nm NAND Flash Memory." Japanese Journal of Applied Physics 45, No. 45 (November 10, 2006): L1200—L1202. http://dx.doi.org/10.1143/jjap.45.l1200.
Повний текст джерелаJackson, Riley, Jonathan Gresl, and Ramon Lawrence. "Efficient External Sorting for Memory-Constrained Embedded Devices with Flash Memory." ACM Transactions on Embedded Computing Systems 20, no. 4 (June 2021): 1–21. http://dx.doi.org/10.1145/3446976.
Повний текст джерелаHolt, Joshua S., Karsten Beckmann, Zahiruddin Alamgir, Jean Yang-Scharlotta, and Nathaniel C. Cady. "Effect of Displacement Damage on Tantalum Oxide Resistive Memory." MRS Advances 2, no. 52 (2017): 3011–17. http://dx.doi.org/10.1557/adv.2017.422.
Повний текст джерелаSassani (Sarrafpour), Bahman A., Mohammed Alkorbi, Noreen Jamil, M. Asif Naeem, and Farhaan Mirza. "Evaluating Encryption Algorithms for Sensitive Data Using Different Storage Devices." Scientific Programming 2020 (May 31, 2020): 1–9. http://dx.doi.org/10.1155/2020/6132312.
Повний текст джерелаDâna, Aykutlu, Imran Akca, Atilla Aydinli, Rasit Turan, and Terje G. Finstad. "A Figure of Merit for Optimization of Nanocrystal Flash Memory Design." Journal of Nanoscience and Nanotechnology 8, no. 2 (February 1, 2008): 510–17. http://dx.doi.org/10.1166/jnn.2008.a156.
Повний текст джерелаVonBergen, Wade, and Madhu Basude. "A High Temp standalone 4MByte Flash memory with SPI Interface for 210C applications." Additional Conferences (Device Packaging, HiTEC, HiTEN, and CICMT) 2012, HITEC (January 1, 2012): 000066–71. http://dx.doi.org/10.4071/hitec-2012-tp11.
Повний текст джерелаAlahmadi, Abdulhadi, and Tae Sun Chung. "Crash Recovery Techniques for Flash Storage Devices Leveraging Flash Translation Layer: A Review." Electronics 12, no. 6 (March 16, 2023): 1422. http://dx.doi.org/10.3390/electronics12061422.
Повний текст джерелаBarrett, Michael. "Gone in a Flash." New Electronics 52, no. 8 (April 23, 2019): 30–31. http://dx.doi.org/10.12968/s0047-9624(22)61007-1.
Повний текст джерелаYang, Yanhua, Jing-Cheng Xia, Youxuan Zheng, Yingzhong Shen, and Gaozhang Gou. "Synthesis and non-volatile electrical memory characteristics of triphenylamine-based polyimides with flexibility segments." New Journal of Chemistry 42, no. 23 (2018): 19008–19. http://dx.doi.org/10.1039/c8nj04103b.
Повний текст джерелаNaqi, Muhammad, Nayoung Kwon, Sung Jung, Pavan Pujar, Hae Cho, Yong Cho, Hyung Cho, Byungkwon Lim, and Sunkook Kim. "High-Performance Non-Volatile InGaZnO Based Flash Memory Device Embedded with a Monolayer Au Nanoparticles." Nanomaterials 11, no. 5 (April 24, 2021): 1101. http://dx.doi.org/10.3390/nano11051101.
Повний текст джерелаZhevnyak, O. G., V. M. Borzdov, A. V. Borzdov, and A. N. Petlitsky. "Monte Carlo Simulation of Flash Memory Elements’ Electrophysical Parameters." Devices and Methods of Measurements 13, no. 4 (December 22, 2022): 276–80. http://dx.doi.org/10.21122/2220-9506-2022-13-4-276-280.
Повний текст джерелаTsoukalas, D. "From silicon to organic nanoparticle memory devices." Philosophical Transactions of the Royal Society A: Mathematical, Physical and Engineering Sciences 367, no. 1905 (October 28, 2009): 4169–79. http://dx.doi.org/10.1098/rsta.2008.0280.
Повний текст джерелаLi, Chao, Bo Lei, Wendy Fan, Daihua Zhang, M. Meyyappan, and Chongwu Zhou. "Molecular Memory Based on Nanowire–Molecular Wire Heterostructures." Journal of Nanoscience and Nanotechnology 7, no. 1 (January 1, 2007): 138–50. http://dx.doi.org/10.1166/jnn.2007.18011.
Повний текст джерелаTang, X., X. Baie, J. P. Colinge, A. Crahay, B. Katschmarsyj, V. Scheuren, D. Spôte, N. Reckinger, F. Van de Wiele, and V. Bayot. "Self-aligned silicon-on-insulator nano flash memory device." Solid-State Electronics 44, no. 12 (December 2000): 2259–64. http://dx.doi.org/10.1016/s0038-1101(00)00221-5.
Повний текст джерелаVladimirov, S., and D. Berestovoy. "IoT Device Identification Protocol based on Degraded Flash Memory." Telecom IT 8, no. 2 (June 2020): 20–31. http://dx.doi.org/10.31854/2307-1303-2020-8-2-20-31.
Повний текст джерелаMarent, A., T. Nowozin, M. Geller, and D. Bimberg. "The QD-Flash: a quantum dot-based memory device." Semiconductor Science and Technology 26, no. 1 (December 9, 2010): 014026. http://dx.doi.org/10.1088/0268-1242/26/1/014026.
Повний текст джерелаWu, Chien-Hung, Song-Nian Kuo, Kow-Ming Chang, Yi-Ming Chen, Yu-Xin Zhang, Ni Xu, Wu-Yang Liu, and Albert Chin. "Investigation of Microwave Annealing on Resistive Random Access Memory Device with Atmospheric Pressure Plasma Enhanced Chemical Vapor Deposition Deposited IGZO Layer." Journal of Nanoscience and Nanotechnology 20, no. 7 (July 1, 2020): 4244–47. http://dx.doi.org/10.1166/jnn.2020.17561.
Повний текст джерелаHong, Yunshu, Yiyu Pan, and Zhongfu Xu. "Based on the comparison with other kinds of storage devices to predict the future development of STT-MRAM." Highlights in Science, Engineering and Technology 46 (April 25, 2023): 197–204. http://dx.doi.org/10.54097/hset.v46i.7704.
Повний текст джерелаSharma, Anju, Preeth Sivakumar, Andrew Feigel, In Tae Bae, Lawrence P. Lehman, Joseph Gregor, James Cash, and Joseph Kolly. "Effects of x-ray exposure on NOR and NAND flash memories during high-resolution 2D and 3D x-ray inspection." International Symposium on Microelectronics 2016, no. 1 (October 1, 2016): 000660–65. http://dx.doi.org/10.4071/isom-2016-thp53.
Повний текст джерелаYang, Seung Dong, Ho Jin Yun, Kwang Seok Jeong, Yu Mi Kim, Sang Youl Lee, Jae Sub Oh, Hi Deok Lee, and Ga Won Lee. "The analysis of 3-Level Charge Pumping in SOHOS Flash Memory." Advanced Materials Research 658 (January 2013): 658–61. http://dx.doi.org/10.4028/www.scientific.net/amr.658.658.
Повний текст джерелаMativenga, Ronnie, Prince Hamandawana, Tae-Sun Chung, and Jongik Kim. "FTRM: A Cache-Based Fault Tolerant Recovery Mechanism for Multi-Channel Flash Devices." Electronics 9, no. 10 (September 27, 2020): 1581. http://dx.doi.org/10.3390/electronics9101581.
Повний текст джерелаXin, Ying, Xiaofeng Zhao, Xiankai Jiang, Qun Yang, Jiahe Huang, Shuhong Wang, Rongrong Zheng, Cheng Wang, and Yanjun Hou. "Bistable electrical switching and nonvolatile memory effects by doping different amounts of GO in poly(9,9-dioctylfluorene-2,7-diyl)." RSC Advances 8, no. 13 (2018): 6878–86. http://dx.doi.org/10.1039/c8ra00029h.
Повний текст джерелаLiu, Shi Min, Xuan Yu Qian, Cheng Zhou, and Xiao Juan Guan. "The Design of an Embedded File System Based on the Flash." Advanced Materials Research 791-793 (September 2013): 1872–75. http://dx.doi.org/10.4028/www.scientific.net/amr.791-793.1872.
Повний текст джерелаHudgens, S., and B. Johnson. "Overview of Phase-Change Chalcogenide Nonvolatile Memory Technology." MRS Bulletin 29, no. 11 (November 2004): 829–32. http://dx.doi.org/10.1557/mrs2004.236.
Повний текст джерелаHe, Yu Ru, Pei Bang Dai, Ji Wen Xu, Yue Qun Lu, and Hua Wang. "Synthesis and Resistive Switching Characteristics of Ethyl Methacrylate /N, N'-4, 4'-Diphenylmethane-Bismaleimide Copolymer." Advanced Materials Research 788 (September 2013): 159–63. http://dx.doi.org/10.4028/www.scientific.net/amr.788.159.
Повний текст джерелаCHONG, CHEE CHING, KAI HONG ZHOU, PING BAI, ER PING LI, and GANESH S. SAMUDRA. "SELF-CONSISTENT SIMULATION OF QUANTUM DOT FLASH MEMORY DEVICE WITH SiO2 AND HfO2 DIELECTRICS." International Journal of Nanoscience 04, no. 02 (April 2005): 171–78. http://dx.doi.org/10.1142/s0219581x05003036.
Повний текст джерелаLin, Wei, Yan Yuan Zhang, and Zhan Huai Li. "A Real-Time Flash Memory Storage System in Embedded Environment." Advanced Materials Research 341-342 (September 2011): 807–10. http://dx.doi.org/10.4028/www.scientific.net/amr.341-342.807.
Повний текст джерелаShim, Won Bo, Seongjae Cho, Jung Hoon Lee, Dong Hua Li, Doo-Hyun Kim, Gil Sung Lee, Yoon Kim, et al. "Stacked Gated Twin-Bit (SGTB) SONOS Memory Device for High-Density Flash Memory." IEEE Transactions on Nanotechnology 11, no. 2 (March 2012): 307–13. http://dx.doi.org/10.1109/tnano.2011.2172217.
Повний текст джерелаPark, Jonghyeok, Soyee Choi, Gihwan Oh, Soojun Im, Moon-Wook Oh, and Sang-Won Lee. "FlashAlloc: Dedicating Flash Blocks by Objects." Proceedings of the VLDB Endowment 16, no. 11 (July 2023): 3266–78. http://dx.doi.org/10.14778/3611479.3611524.
Повний текст джерелаLin, Chan-Ching, Kuei-Shu Chang-Liao, Tzung-Bin Huang, Cheng-Jung Yu, and Hsueh-Chao Ko. "A new erase method for scaled NAND flash memory device." Microelectronics Reliability 72 (May 2017): 34–38. http://dx.doi.org/10.1016/j.microrel.2017.03.031.
Повний текст джерелаHwang, Eun Suk, Jun Shik Kim, Seok Min Jeon, Seung Jun Lee, Younjin Jang, Deok-Yong Cho, and Cheol Seong Hwang. "In2Ga2ZnO7oxide semiconductor based charge trap device for NAND flash memory." Nanotechnology 29, no. 15 (February 23, 2018): 155203. http://dx.doi.org/10.1088/1361-6528/aaadf7.
Повний текст джерелаKim, Bo-Kyeong, Gun-Woo Kim, and Dong-Ho Lee. "A Novel B-Tree Index with Cascade Memory Nodes for Improving Sequential Write Performance on Flash Storage Devices." Applied Sciences 10, no. 3 (January 21, 2020): 747. http://dx.doi.org/10.3390/app10030747.
Повний текст джерелаJeong, Jun-Kyo, Jae-Young Sung, Woon-San Ko, Ki-Ryung Nam, Hi-Deok Lee, and Ga-Won Lee. "Physical and Electrical Analysis of Poly-Si Channel Effect on SONOS Flash Memory." Micromachines 12, no. 11 (November 15, 2021): 1401. http://dx.doi.org/10.3390/mi12111401.
Повний текст джерелаGordon, Holden, Jack Edmonds, Soroor Ghandali, Wei Yan, Nima Karimian, and Fatemeh Tehranipoor. "Flash-Based Security Primitives: Evolution, Challenges and Future Directions." Cryptography 5, no. 1 (February 4, 2021): 7. http://dx.doi.org/10.3390/cryptography5010007.
Повний текст джерелаWu, Enxiu, Yuan Xie, Shijie Wang, Daihua Zhang, Xiaodong Hu, and Jing Liu. "Multi-level flash memory device based on stacked anisotropic ReS2–boron nitride–graphene heterostructures." Nanoscale 12, no. 36 (2020): 18800–18806. http://dx.doi.org/10.1039/d0nr03965a.
Повний текст джерелаChae, Suk-Joo, Ronnie Mativenga, Joon-Young Paik, Muhammad Attique, and Tae-Sun Chung. "DSFTL: An Efficient FTL for Flash Memory Based Storage Systems." Electronics 9, no. 1 (January 12, 2020): 145. http://dx.doi.org/10.3390/electronics9010145.
Повний текст джерелаNguyen, The-Nghia, Sunghyun Park, and Donghwa Shin. "Extraction of Device Fingerprints Using Built-in Erase-Suspend Operation of Flash Memory Devices." IEEE Access 8 (2020): 98637–46. http://dx.doi.org/10.1109/access.2020.2995891.
Повний текст джерелаLiu, W. J., L. Chen, P. Zhou, Q. Q. Sun, H. L. Lu, S. J. Ding, and David W. Zhang. "Chemical-Vapor-Deposited Graphene as Charge Storage Layer in Flash Memory Device." Journal of Nanomaterials 2016 (2016): 1–6. http://dx.doi.org/10.1155/2016/6751497.
Повний текст джерелаJiang, Dandan, Lei Jin, and Zongliang Huo. "A Quantitative Approach to Characterize Total Ionizing Dose Effect of Periphery Device for 65 nm Flash Memory." Nanoscience and Nanotechnology Letters 10, no. 3 (March 1, 2018): 378–82. http://dx.doi.org/10.1166/nnl.2018.2604.
Повний текст джерелаJeon, Sanghun. "Thermal Stability and Memory Characteristics of HfON Trapping Layer for Flash Memory Device Applications." Electrochemical and Solid-State Letters 12, no. 11 (2009): H412. http://dx.doi.org/10.1149/1.3212683.
Повний текст джерелаZhang, Kai, Xinyi Zhu, Yafen Yang, and Hao Zhu. "Polarization of Bi2Se3 thin film toward non-volatile memory applications." AIP Advances 12, no. 8 (August 1, 2022): 085104. http://dx.doi.org/10.1063/5.0093212.
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