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Статті в журналах з теми "Filières puissance et mémoires":
Bertheleu, Hélène. "Mémoires des migrations et politisation des émotions au musée." Diversité 195, no. 1 (2019): 46–53. http://dx.doi.org/10.3406/diver.2019.4785.
Samson, Dominique, Claire de Saint Martin, and Gilles Monceau. "Perception étudiante de la commande d’écriture de mémoires et rapport à l’écriture." Articles 19, no. 2 (January 15, 2018): 73–94. http://dx.doi.org/10.7202/1042850ar.
Aquatias, Sylvain. "Se différencier ou se conformer : enjeux de la recherche en sociologie sur les cultures juvéniles, enjeux des cultures juvéniles…" Nouvelles perspectives en sciences sociales 8, no. 1 (February 7, 2013): 83–117. http://dx.doi.org/10.7202/1013919ar.
Chottin, Marion. "La cécité dans les Mémoires d’aveugle de Derrida." Canadian Journal of Disability Studies 8, no. 6 (December 19, 2019): 151–68. http://dx.doi.org/10.15353/cjds.v8i6.584.
Mabrouk, Hassna. "Mise en récit d’une conquête de l’Ailleurs, du XVIe siècle : mémoire et représentations du personnage historique Mostafa Al-Azemmouri ou Estevanico." HYBRIDA, no. 5(12/2022) (December 27, 2022): 111. http://dx.doi.org/10.7203/hybrida.5(12/2022).24045.
BAUMONT, R., and C. HUYGHE. "Editorial." INRA Productions Animales 30, no. 5 (June 29, 2018): 425–26. http://dx.doi.org/10.20870/productions-animales.2017.30.5.2272.
Rosoux, Valérie. "Mémoire(s) européenne(s) ? Forces et limites de l’intervention politique dans la mise en scène de l’histoire." Articles 22, no. 2 (April 1, 2004): 17–34. http://dx.doi.org/10.7202/007872ar.
"SMR & GEN IV, vers de nouveaux horizons." Revue Générale Nucléaire, no. 1 (January 2021): 38–43. http://dx.doi.org/10.1051/rgn/20211038.
BAUMONT, R. "Editorial." INRA Productions Animales 28, no. 5 (January 14, 2020). http://dx.doi.org/10.20870/productions-animales.2015.28.5.3039.
Дисертації з теми "Filières puissance et mémoires":
Bure, Taylor Rose. "Inelastic background analysis from lab-based HAXPES spectra for critical interfaces in nano-electronics." Electronic Thesis or Diss., Université Clermont Auvergne (2021-...), 2023. http://www.theses.fr/2023UCFA0125.
This work uses lab-scale hard X-ray photoelectron spectroscopy (HAXPES) in the perspective of inelastic background analysis (IBA) for applications in the metrology field in order to provide thickness measurements of technologically relevant materials in memory and power devices. We seek to meet the need for a method adapted for inline processes and routine analysis. The samples presented in this work were fabricated by pre-industrial processes and are representative of real device technology with concerns like complex interdiffusion properties and deeply buried active layers and interfaces. In this work, we evaluate the HAXPES-IBA technique executed with QUASES software by studying the free parameters, the operator contributions, and uncertainty in the depth distribution. We present a self-contained analysis by accessing high energy photoelectron spectra of elements from each sample layer recorded with a novel lab-scale HAXPES instrument (PHI Quantes) fitted with a Cr Kα photon source (hv = 5414.72 eV). First, highly controlled reference samples of known thicknesses (Al2O3 and HfO2 thin films) were studied to confirm the accuracy of the IBA method through validation against highly quantitative reference techniques. HAXPES-IBA thickness determinations of bilayer samples with a thick overlayer up to 25 nm and a buried layer of approximately 2.5 nm were found to be in excellent agreement with results from X-ray reflectivity (XRR) with fitting uncertainty of the IBA solution in the sub-nanometer range. The need to select the appropriate HAXPES excitation energy depending on total film thickness was demonstrated thanks to complimentary HAXPES measurements recorded with Ga Kα radiation (hv = 9251.74 eV). Finally, we apply the method to realistic technological samples. In the first study, we present thickness results from a sample class of Al2O3 films deposited over GaN by atomic layer deposition (ALD), representative of a recessed gate MOS channel High Electron Mobility Transistor (HEMT). Quantitative secondary ion mass spectrometry (SIMS) measurements compliment the IBA technique by confirming need for reference spectrum. In the second study, the HAXPES-IBA method is combined with ion sputtering to confirm the Ti/TiN overlayer thickness in a Ti/HfO2-based structure used for oxide resistive random access memory (OxRRAM) technology. We provide a critical summary of advances to reach for an accurate and reliable HAXPES-IBA method fully-integrated into inline process control
Gassoumi, Malek. "Etude des défauts électriquement actifs dans les composants hyperfréquences de puissance dans les filières SiC et GaN." Lyon, INSA, 2006. http://theses.insa-lyon.fr/publication/2006ISAL0029/these.pdf.
The increasing demanded of components allowing operating in strong power in high frequency and in high temperatures drove to the development of electronics system on semiconductors base to wide band gap such as the gallium nitride (GaN) and silicon carbide (SiC). However the performances are limited by the quality of the material (impurities, crystallographic defects). In this thesis, we are interested in the study of two devices: MESFETs 4H-SiC, HEMTs AlGaN/GaN/Si for hyperfrequency and power applications. The study of the output characteristics revals anomalies. For MESFETsH-SiC, hysteresis effect on drain/source conductance spectacular Kink effect and shift of voltage has been observed. The DLTS and CDLTS measurements demonstrate that these effects are principally due to the presence of deep centers in the structures. For HEMT AlGaN/GaN/Si, hysteresis effect, series resistance is observed. The CDLTS measurements with impulses on the drain demonstrate the presence of punctual traps by extended defects
Bourcier, Eric. "Analyse de fonctionnement en amplification de puissance en bande Ka des transistors HEMT des filières AsGa et InP." Lille 1, 1998. https://pepite-depot.univ-lille.fr/LIBRE/Th_Num/1998/50376-1998-9.pdf.
Trassaert, Stéphane. "Réalisation technologique de transistors à effet de champ dans les filières InP et GaN pour amplification de puissance hyperfréquence." Lille 1, 2000. https://pepite-depot.univ-lille.fr/RESTREINT/Th_Num/2000/50376-2000-45.pdf.
La seconde partie porte sur la realisation de mesfets dans la filiere gan pour des applications en puissance et a haute temperature. Les differentes briques technologiques permettant de realiser le composant ont ete d'abord etudiees. Le contact ohmique retenu tient thermiquement jusqu'a 600\c. Une gravure du gan par plasma a aussi ete mise au point. Enfin, le contact schottky a ete aborde. Les composants realises ont ete caracterises. Nous avons obtenu, selon la distance source drain, jusqu'a 140 v et 350 v pour respectivement une tenue en tension vds en configuration transistor a canal ouvert et une tension de claquage en configuration diode inverse. La mesure a haute temperature a montre le fonctionnement du composant jusqu'a 450\c sans degradation. La mesure en regime impulsionnel a mis en evidence l'existence de pieges localises en surface qui peuvent etre excites par la lumiere et/ou la temperature et/ou le point de polarisation. Une densite de puissance de 2,2 w/mm a ete obtenue a 3 ghz pour une longueur de grille de 300 nm, ce qui constitue un resultat au niveau de l'etat de l'art
Demenitroux, Wilfried. "Caractérisation avancée et nouvelles méthodologies de modélisation des technologies GaN pour la conception d’amplificateurs de puissance large bande et haut rendement aux fréquences RF et microondes." Limoges, 2011. https://aurore.unilim.fr/theses/nxfile/default/bd67ae36-c41e-48b1-a795-cee1579821d7/blobholder:0/2011LIMO4040.pdf.
Highly efficient, high linearity and wideband are the keyword of the new power amplifier in telecom nowadays. Thus, more and more power amplifiers are developed using packaged transistor, adding a difficulty to extract reliable CAD models for designing these amplifiers. The topic of this thesis is to propose a new methodology for modeling packaged transistor, fast, accurate automatic and dedicated to the design of wideband and highly efficient power amplifiers. A new behavioral model of packaged transistor is proposed, using an innovative method of extraction. In order to validate the new design flow approach, the study results in a GaN wideband and highly efficient power amplifier presenting a mean PAE of 65%, a mean output power of 41 dBm and a mean power gain of de 13 dB over 36% of relative bandwidth around 2. 2 GHz
Elkhou, Majda. "Modélisation hydrodynamique bidimensionnelle de transistors à effet de champ : analyse physique des limitations et des performances hyperfréquences des filières pHEMT sur GaAs et HEMT sur GaN pour l'amplification de puissance." Lille 1, 2004. https://pepite-depot.univ-lille.fr/RESTREINT/Th_Num/2004/50376-2004-49.pdf.
Zaknoune, Mohammed. "Étude de la technologie et des potentialités pour l'amplificaton de puissance hyperfréquence des transistors à effet de champ des filières phosphure AlGaInP/GaInAset métamorphique AlInAs/GaInAs sur substrat GaAs." Lille 1, 1999. https://pepite-depot.univ-lille.fr/LIBRE/Th_Num/1999/50376-1999-95.pdf.
Lhortolary, Julien. "Modèle prédictif de transistor HEMT pour la simulation précise de l'intermodulation à très bas niveau de puissance et aux hautes fréquences : évaluation des performances en linéarité de différentes filières technologiques pHEMT AsGa." Limoges, 2007. https://aurore.unilim.fr/theses/nxfile/default/92041af0-26f1-4756-82ed-f1eaa3b70dad/blobholder:0/2007LIMO4007.pdf.
Today, confident design of highly linear high-frequency MMICs is of primary concern in modern telecommunication systems. Unfortunately, at high frequencies and low output power, accurate prediction of intermodulation distortions fails with most of the available HEMT models due to nonlinearity extractions based on CW S-parameter measurements at DC bias points or low RF frequency measurements. In this manuscript, we propose a suitable HEMT model, extracted from pulsed I/V and pulsed S-parameter measurements over a wide frequency range, which allows accurate intermodulation distortions prediction at both high frequencies range and for low output power. Careful IM3 generation analysis has been undertaken. Complex interaction phenomenon involving each transistor’s intrinsic non-linear elements have been demonstrated and the role of the capacitance Cgd have been shown to be of primary concern. Finally, a comparison study of 6 different pHEMT GaAs foundry process based on 10GHz 2-tons load pull measurements is presented. This study have point out 2 foundry process (PPH15 and PP15-20) suitable for highly linear high frequency MMIC design
Mbaye, Amadou. "Linéarisation des amplificateurs de puissance large-bande pour des applications de communications tactiques et de diffusion audio ou vidéo numérique." Thesis, Paris Est, 2015. http://www.theses.fr/2015PEST1021/document.
Power amplifier is one of the most critical element within radiocommunications systems. The PA is their main source of nonlinearities and it has a great contribution on the emitter's power consumption. Running the PA with highest power efficiency is thus as crucial as having it linear for a good communication quality. However these two specifications of the PA are antagonistic and PA manifacturers need to find a compromise between linearity and power efficiency. Digital Predistortion (DPD) and Crest factor Reduction techniques are intended to improve power efficiency while preserving linearity or inversely. Linearization of wideband RF power amplifiers using Digital Predistortion is the focus of this thesis. Three DPD issues are investigated in these works. The first issue deals with multiband linearization where signals with various waveforms located at different frequency bands are amplified. The second objective of this thesis is to study a concurrent DPD/CFR systems based on an automatic estimation of the necessary CFR gain. The last part of this dissertation deals with PA linearization under antenna load variations. Indeed, the impedance of antenna may vary because of electromagnetic objects that are present in its vicinity. Those impedance variations may instigate signal reflections toward the PA, that modify some of its main specifications (linearity, delivered power and efficiency). Our goal in this field is to preserve DPD linearization performances under antenna load mismatch
Nguyen, Clément. "Caractérisation électrique et modélisation de la dynamique de commutation résistive dans des mémoires OxRAM à base de HfO2." Thesis, Université Grenoble Alpes (ComUE), 2018. http://www.theses.fr/2018GREAT035/document.
Oxyde-based resistive memories OxRAM are a technology of emergent non-volatile memory, as phase-change memories (PCRAM) or magnetoresistive memories (MRAM). In the beginning OxRAM were very studied in order to compete with Flash memories, whose mechanism relies on the storage of electrical charges in a flotting gate. However, with the arising of 3D-NAND technology, it seems very difficult for OxRAM to reach the same storage capacities as Flash memories. But their impressive operating speed, far higher than NAND’s, and their cost far lower than DRAM’s, allow them to operate at the border of these two technologies, in a category called « Storage Class Memory ». Furthermore, the integration of OxRAM in the Back-End-Of-Line, just above CMOS circuits, makes this technology very attractive. On the other hand, OxRAM are known to have a very strong variability, which represents the main obstacle to their expansion.In this thesis, the dynamics of the resistive switching of hafnium oxyde based OxRAM has been investigated, with a desire to focus on very short times, as they are one of the main assets of this technology. To do so, our work first focuses on an experimental aspect, with electrical characterization. We were able to watch, with a dynamical monitoring, the resistive switching of the memories, at the scale of the dozen of nanoseconds, for writing and erasing operations, thanks to an entirely dedicated set-up. Then, the impacts that the time reduction, and the lowering of the voltage and current, can have on the reliability of OxRAM, were analysed, with variability measurements. The second part of this work concerns modelisation, with the elaboration of a physics-based, semi-analytical model, in order to understand the switching mechanisms. After the comparison of the results obtained by our model with the experimental ones, our model has been applied to statistical measurements. Electrical tests on OxRAM arrays have been performed, and fitted by the model. Finally, the low frequency noise (RTN) in OxRAM has been studied, as it stands as one of the main factors of degradation of OxRAM reliability. Ideas to improve the robustness of OxRAM against RTN are suggested
Книги з теми "Filières puissance et mémoires":
Message à l'Assemblée législative de la province de Manitoba en conformité d'un ordre en conseil: Transmettant copies des ordres en conseil, mémoires et correpondances concernant l'extension des limites de la province, ses relations financières avec la puissance et le transfert des terres publiques et de celles réservées pour les écoles à la province. Winnipeg: G. Bourdeau, 1986.
Частини книг з теми "Filières puissance et mémoires":
"Le mécanisme de puissance de l’esprit humain référé à sa concrète origine." In Essais et mémoires de Gustave Guillaume. Essai de mécanique intuitionnelle II. Espace et temps en pensée commune et dans les structures de langue, 39–46. Presses de l'Université Laval, 2018. http://dx.doi.org/10.2307/j.ctv1g2481w.6.