Дисертації з теми "FIELD EMISSION OF ELECTRONS"
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Kuwahara, M., T. Morino, T. Nakanishi, S. Okumi, M. Yamamoto, M. Miyamoto, N. Yamamoto, et al. "Spin-Polarized Electrons Extracted from GaAs Tips using Field Emission." American Institite of Physics, 2007. http://hdl.handle.net/2237/11993.
Повний текст джерелаSosa, Edward Delarosa. "The Electron Emission Characteristics of Aluminum, Molybdenum and Carbon Nanotubes Studied by Field Emission and Photoemission." Thesis, University of North Texas, 2002. https://digital.library.unt.edu/ark:/67531/metadc3311/.
Повний текст джерелаPoa, Chun Hwa Patrick. "Electron field emission from carbons and their emission mechanism." Thesis, University of Surrey, 2002. http://epubs.surrey.ac.uk/842670/.
Повний текст джерелаCollins, Clare Melissa. "Ordered nanomaterials for electron field emission." Thesis, University of Cambridge, 2017. https://www.repository.cam.ac.uk/handle/1810/270357.
Повний текст джерелаKuhnen, Raphael [Verfasser], and Bernd von [Akademischer Betreuer] Issendorf. "Electron wave packet interference and directed emission of electrons in a two color laser field = Elektronenwellenpacketinterferenz und gerichtete Emission von Elektronen in einem zweifarben Laserfeld." Freiburg : Universität, 2012. http://d-nb.info/1123467781/34.
Повний текст джерелаLaou, Philips. "Field emission devices on silicon." Thesis, National Library of Canada = Bibliothèque nationale du Canada, 1998. http://www.collectionscanada.ca/obj/s4/f2/dsk1/tape11/PQDD_0001/NQ44486.pdf.
Повний текст джерелаTsang, Wei Mong. "Electron field emission properties from nanoengineered structures." Thesis, University of Surrey, 2006. http://epubs.surrey.ac.uk/844374/.
Повний текст джерелаTang, Yew Fei. "Electron field emission from laser crystallised amorphous silicon." Thesis, University of Surrey, 2003. http://epubs.surrey.ac.uk/843179/.
Повний текст джерелаSmith, Richard Charles. "Electron field emission properties of tip based emitters." Thesis, University of Surrey, 2005. http://epubs.surrey.ac.uk/843091/.
Повний текст джерелаForrest, Roy Duncan. "Electron field emission from amorphous semiconductor thin films." Thesis, University of Surrey, 2000. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.484237.
Повний текст джерелаPtitsin, V. E. "New Thermal Field Electron Emission Energy Conversion Method." Thesis, Sumy State University, 2012. http://essuir.sumdu.edu.ua/handle/123456789/35247.
Повний текст джерелаParmee, Richard. "X-ray generation by field emission." Thesis, University of Cambridge, 2018. https://www.repository.cam.ac.uk/handle/1810/284924.
Повний текст джерелаTirolli, Marcelo Nogueira. "Modelamento computacional de ponteiras de emissão de campo." [s.n.], 2007. http://repositorio.unicamp.br/jspui/handle/REPOSIP/259568.
Повний текст джерелаDissertação (mestrado) - Universidade Estadual de Campinas, Faculdade de Engenharia Eletrica e de Computação
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Resumo: Este trabalho tem como objetivo o estudo do comportamento elétrico de uma ponteira de emissão de campo, modelada na forma de um hemisfério sobre um poste, através de recursos computacionais (simulações). Escolhemos o software comercial Ansys, que utiliza o método dos elementos finitos nas análises dos fenômenos físicos para obtenção do campo elétrico na superfície da ponteira. Em seguida, foi desenvolvido também um programa computacional que realiza o cálculo da corrente de emissão baseado na teoria de emissão de campo de Fowler-Nordheim (F-N). Para calcular a corrente, o programa faz uso dos resultados das simulações do campo elétrico obtidos no software Ansys. Apresentamos também os resultados da influência que as dimensões como o raio de curvatura do hemisfério, a altura da ponteira e a distância entre anodo e catodo exercem sobre o comportamento do campo elétrico, da corrente de emissão e de outras grandezas físicas que envolvem emissão de campo
Abstract: This work aims to study the electrical behavior of a field emission tip, shaped in the form hemisphere on a post, through computational resources (simulations). We chose the Ansys commercial software that uses the finite element methods in the analyses of the physical phenomena to obtain the electric field in the surface of the tip. After that, a computational program was also developed to perform the calculation of emission current based on Fowler-Nordheim (F-N) field emission theory. To calculate the current, the program uses the results of the electric field simulations gotten in Ansys software. We also show the results of influences that dimensions such as the hemisphere curvature radius, the height of the tip and the distance between anode and cathode exert on the behavior of the electric field, emission current and other physical quantities that involve field emission
Mestrado
Eletrônica, Microeletrônica e Optoeletrônica
Mestre em Engenharia Elétrica
Sanchez, Jaime A. "ELECTRON FIELD-EMISSION FROM CARBON NANOTUBES FOR NANOMACHINING APPLICATIONS." UKnowledge, 2008. http://uknowledge.uky.edu/gradschool_diss/590.
Повний текст джерелаWang, Tong. "Enhanced Field Emission Studies on Nioboim Surfaces Relevant to High Field Superconducting Radio-Frequency Devices." Diss., Virginia Tech, 2002. http://hdl.handle.net/10919/29284.
Повний текст джерелаPh. D.
Archer, Anthony D. "Spectroscopic studies of field-induced electron emission from isolated microstructures." Thesis, Aston University, 1992. http://publications.aston.ac.uk/8241/.
Повний текст джерелаAndrew), Patterson Alex A. (Alex. "Theory and modeling of field electron emission from low-dimensional electron systems." Thesis, Massachusetts Institute of Technology, 2018. http://hdl.handle.net/1721.1/115640.
Повний текст джерелаThis electronic version was submitted by the student author. The certified thesis is available in the Institute Archives and Special Collections.
Cataloged from student-submitted PDF version of thesis.
Includes bibliographical references (pages 253-271).
While experimentalists have succeeded in fabricating nanoscale field electron emitters in a variety of geometries and materials for use as electron sources in vacuum nanoelectronic devices, theory and modeling of field electron emission have not kept pace. Treatments of field emission which address individual deviations of real emitter properties from conventional Fowler-Nordheim (FN) theory, such as emission from semiconductors, highly-curved surfaces, or low-dimensional systems, have been developed, but none have sought to treat these properties coherently within a single framework. As a result, the work in this thesis develops a multidimensional, semiclassical framework for field emission, from which models for field emitters of any dimensionality, geometry, and material can be derived. The effects of quantum confinement and emitter tip geometry on the properties of emission were investigated by utilizing the framework to derive models for: i) a highly-curved, nanoscale, metal emitter tip; ii) a bulk silicon emitter with a surface quantum well formed due to electric field penetration and a mechanism that limits the maximum conduction band emitted current density (ECD) to the bulk flux density supply; and iii) a cylindrical silicon nanowire emitter. Results from a highly-curved, nanoscale, metal emitter tip reveal that despite signicant electron supply reductions as a result of quantum confinement, the emitted current density (ECD) increases as the emitter radius decreases due to the effects of electric field enhancement. Additionally, emitters with radii smaller than 5 nm exhibit a narrow total energy distribution and highly non-linear FN plots. Consistent with experimental observations, the saturation of the conduction band ECD in silicon emitters leads to the appearance of three distinct regions in FN plots, which signify conduction-band-dominated, valence-band-dominated, and transitional regimes of emission. Confinement of electrons to a nanowire emitter geometry further reduces the electron supply available for emission and, consequently, the conduction band saturation ECD. Overall, findings show that the dimensionality, geometry, and material of field emitters all play a critical role in field emission processes at the nanoscale. Accordingly, the semiclassical framework for field emission is intended to form a solid foundation upon which more complete models of emission can be developed.
by Alex Andrew Patterson.
Ph. D.
Day, Christopher M. "Field enhanced thermionic emission from oxide coated carbon nanotubes." Virtual Press, 2006. http://liblink.bsu.edu/uhtbin/catkey/1348860.
Повний текст джерелаDepartment of Physics and Astronomy
Sanborn, Graham Patrick. "A thin film triode type carbon nanotube field electron emission cathode." Diss., Georgia Institute of Technology, 2013. http://hdl.handle.net/1853/50302.
Повний текст джерелаAndrew), Patterson Alex A. (Alex. "An analytical framework for field electron emission, incorporating quantum- confinement effects." Thesis, Massachusetts Institute of Technology, 2013. http://hdl.handle.net/1721.1/84863.
Повний текст джерелаCataloged from PDF version of thesis.
Includes bibliographical references (pages 141-151).
As field electron emitters shrink to nanoscale dimensions, the effects of quantum confinement of the electron supply and electric field enhancement at the emitter tip play a significant role in determining the emitted current density (ECD). Consequently, the Fowler-Nordheim (FN) equation, which primarily applies to field emission from the planar surface of a bulk metal may not be valid for nanoscale emitters. While much effort has focused on studying emitter tip electrostatics, not much attention has been paid to the consequences of a quantum-confined electron supply. This work builds an analytical framework from which ECD equations for quantum-confined emitters of various geometries and materials can be generated and the effects of quantum confinement of the electron supply on the ECD can be studied. ECD equations were derived for metal emitters from the elementary model and for silicon emitters via a more physically-complete version of the elementary model. In the absence of field enhancement at the emitter tip, decreasing an emitter's dimensions is found to decrease the total ECD. When the effects of field enhancement are incorporated, the ECD increases with decreasing transverse emitter dimensions until a critical dimension dpeak, below which the reduced electron supply becomes the limiting factor for emission and the ECD decreases. Based on the forms of the ECD equations, alternate analytical methods to Fowler-Nordheim plots are introduced for parameter extraction from experimental field emission data. Analysis shows that the FN equation and standard analysis procedures over-predict the ECD from quantum-confined emitters. As a result, the ECD equations and methods introduced in this thesis are intended to replace the Fowler-Nordheim equation and related analysis procedures when treating field emission from suitably small field electron emitters.
by Alex A. Patterson.
S.M.
Xu, Ningsheng. "Field induced hot electron emission from composite metal-insulator-metal microstructures." Thesis, Aston University, 1986. http://publications.aston.ac.uk/8048/.
Повний текст джерелаLittle, Scott A. "Experimental and numerical studies of a new thermionic emitter structure based on oxide coated carbon nanotubes operating at large emission currents." Virtual Press, 2007. http://liblink.bsu.edu/uhtbin/catkey/1380104.
Повний текст джерелаDepartment of Physics and Astronomy
Carr, Christopher G. "Space charge-limited emission studies using Coulomb's Law." Thesis, Monterey, Calif. : Springfield, Va. : Naval Postgraduate School ; Available from National Technical Information Service, 2004. http://library.nps.navy.mil/uhtbin/hyperion/04Jun%5FCarr.pdf.
Повний текст джерелаWalton, Jonathan Seabrooke. "Analysis of surface treated chemical vapour deposited diamond for field electron emission." Thesis, Heriot-Watt University, 2000. http://hdl.handle.net/10399/520.
Повний текст джерелаKudjoe, John. "Design and development of field emission electron columns with variable beam energy." Thesis, University of York, 1994. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.259834.
Повний текст джерелаChe, Yulu. "Ambipolar Ballistic Electron Emission Microscopy Studies of Gate-field Modified Schottky Barriers." The Ohio State University, 2010. http://rave.ohiolink.edu/etdc/view?acc_num=osu1282070943.
Повний текст джерелаPasquetto, Mariana Pinheiro. "Estudo do fenomeno de emissão de eletrons por campo eletrico em nanotubos de carbono." [s.n.], 2008. http://repositorio.unicamp.br/jspui/handle/REPOSIP/259945.
Повний текст джерелаDissertação (mestrado) - Universidade Estadual de Campinas, Faculdade de Engenharia Eletrica e de Computação
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Resumo: Materiais emissores de elétrons são extremamente importantes no ramo da micro e nano eletrônica, como por exemplo, em displays, microscópios eletrônicos, sensores de pressão. Para essas aplicações, podem ser usados catodos frios, ou seja, materiais que não necessitam ser aquecidos para emitirem elétrons. Através da aplicação de um campo elétrico local, aumenta-se a probabilidade dos elétrons tunelarem do sólido para o vácuo. Este é o fenômeno de emissão de campo. Essa dissertação apresenta os resultados da emissão de elétrons por efeito de campo elétrico (emissão de campo) de amostras de nanotubos de carbono, dopados e não-dopados com boro e nitrogênio. As amostras estudadas foram fornecidas pelo Laboratório de NanoEngenharia I do DSIF, FEEC. É feita, também, uma descrição da teoria de emissão de campo e de algumas aplicações desse fenômeno. Verificou-se que os materiais testados são bons emissores de elétrons.
Abstract: Electron emitter materials are extremely important in the field of micro and nano electronics, for example, in displays, electronic microscopes, pressure sensors. For such applications, cold cathodes can be used, that is, materials that do not need to be heated to emit electrons. Through the application of a local electric field, it is increased the probability of the electrons to tunnel from the solid. This is the phenomenon of field emission. This dissertation presents the results of the electron emission in the presence of an electric field (field emission) of samples of carbon nanotubes, undoped and doped with boron and nitrogen. The samples were provided by the Laboratório de NanoEngenharia I from DSIF, FEEC. It is also made a description of the field emission theory and of some applications of this phenomenon. It was found that the materials tested are good electron emitters.
Mestrado
Eletrônica, Microeletrônica e Optoeletrônica
Mestre em Engenharia Elétrica
Neuerman, Robert A. "Simulation and design methods for free-electron laser systems." Thesis, Monterey, California : Naval Postgraduate School, 2009. http://edocs.nps.edu/npspubs/scholarly/theses/2009/Dec/09Dec%5FNeuerman.pdf.
Повний текст джерелаThesis Advisor(s): Colson, William B. ; Blau, Joseph. "December 2009." Description based on title screen as viewed on January 28, 2010. Author(s) subject terms: Free-electron lasers, FEL simulations, undulators, FEL oscillators, FEL amplifiers, diamond field-emitter arrays, field emission cathodes, cathode test cell. Includes bibliographical references (p. 45). Also available in print.
Seelaboyina, Raghunandan. "Robust and High Current Cold Electron Source Based on Carbon Nanotube Field Emitters and Electron Multiplier Microchannel Plate." FIU Digital Commons, 2007. http://digitalcommons.fiu.edu/etd/217.
Повний текст джерелаKnoop, Ludvig de. "Development of quantitative in situ transmission electron microscopy for nanoindentation and cold-field emission." Toulouse 3, 2014. http://thesesups.ups-tlse.fr/3041/.
Повний текст джерелаThis thesis has focused on the development of quantitative in situ transmission electron microscopy (TEM) techniques. We have used a special nano-probe sample holder, which allows local electrical biasing and micro-mechanical testing. The finite element method (FEM) was used to compare models with the experimental results. In addition to conventional imaging techniques, electron holography has been used to measure electric fields and strains. The first part addresses cold-field emission from a carbon cone nanotip (CCnT). This novel type of carbon structure may present an alternative to W-based cold-field emission sources, which are used in the most advanced electron guns today. When a sufficiently strong electric field is applied to the CCnT, electrons can tunnel through the energy barrier with the vacuum, which corresponds to the phenomenon of cold-field emission. Using electron holography and FEM, a quantified value of the local electric field at the onset of field emission was found (2. 5 V/nm). Combining this with one of the Fowler-Nordheim equations, the exit work function of the CCnT was determined to be 4. 8±0. 3 eV. The number of charges on the CCnT before and after the onset of field emission was also measured. The second part focuses on the plastic deformation of Al thin films to test dislocation-interface interactions. A dislocation close to an interface with a stiffer material should be repelled by it. Here, we find to the contrary that dislocations moving towards the oxidized interface are absorbed, even at room temperature. The stress was derived from a combination of load-cell measurements and FEM calculations. Finally, preliminary experiments to combine in situ indentation and dark-field electron holography are reported
Chen, Li. "Fabrication of electron sources for a miniature scanning electron microscope." Thesis, University of York, 1999. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.313904.
Повний текст джерелаSingh, Gopal [Verfasser]. "Development and characterization of a LaB6 based high brightness field emission electron source / Gopal Singh." Hamburg : Staats- und Universitätsbibliothek Hamburg Carl von Ossietzky, 2020. http://nbn-resolving.de/urn:nbn:de:gbv:18-ediss-88773.
Повний текст джерелаChristy, Larry A. "Field Emission Properties of Carbon Nanotube Fibers and Sheets for a High Current Electron Source." University of Cincinnati / OhioLINK, 2014. http://rave.ohiolink.edu/etdc/view?acc_num=ucin1406819279.
Повний текст джерелаLagotzky, Stefan, Roman Barday, Andreas Jankowiak, Thorsten Kamps, Carola Klimm, Jens Knobloch, Günter Müller, Boris Senkovsky, and Frank Siewert. "Prevention of electron field emission from molybdenum substrates for photocathodes by the native oxide layer." Cambridge University Press, 2015. https://tud.qucosa.de/id/qucosa%3A39022.
Повний текст джерелаWest, Ryan Matthew. "Work function fluctuation analysis of polyaniline films." Diss., Georgia Institute of Technology, 2013. http://hdl.handle.net/1853/47586.
Повний текст джерелаNeupane, Suman. "Synthesis and Electron Emission Properties of Aligned Carbon Nanotube Arrays." FIU Digital Commons, 2014. http://digitalcommons.fiu.edu/etd/1168.
Повний текст джерелаLiška, Ivo. "Coulomb Interactions in Electron Beams in the Vicinity of a Schottky and Cold Field Emission Sources." Doctoral thesis, Vysoké učení technické v Brně. Fakulta strojního inženýrství, 2010. http://www.nusl.cz/ntk/nusl-233896.
Повний текст джерелаHii, King-Fu. "A PRECISION INSTRUMENT FOR RESEARCH INTO NANOLITHOGRAPHIC TECHNIQUES USING FIELD-EMITTED ELECTRON BEAMS." UKnowledge, 2008. http://uknowledge.uky.edu/gradschool_diss/675.
Повний текст джерелаTakamura, S., S. Mizoshita, and N. Ohno. "Suppression of secondary electron emission from the material surfaces with grazing incident magnetic field in the plasma." American Institute of Physics, 1996. http://hdl.handle.net/2237/6993.
Повний текст джерела"Field emission properties of a silicon tip array." 2001. http://library.cuhk.edu.hk/record=b5890592.
Повний текст джерелаThesis (M.Phil.)--Chinese University of Hong Kong, 2001.
Includes bibliographical references (leaves 134-140).
Abstracts in English and Chinese.
Abstract --- p.I
Acknowledgement --- p.III
Contents --- p.IV
List of Figure captions --- p.VIII
List of Table captions --- p.XIII
Chapter Chapter 1 --- Introduction --- p.1
Chapter Chapter 2 --- Theory and Applications
Chapter 2.1 --- Principle of field emission
Chapter 2.1.1 --- The Fowler-Nordheim Theory --- p.3
Chapter 2.1.2 --- Field emission from metals --- p.6
Chapter 2.1.3 --- Field emission from semiconductors --- p.8
Chapter 2.1.3.1 --- Advantages and limitations of silicon --- p.9
Chapter 2.1.4 --- Application of the Fowler-Nordheim theory --- p.10
Chapter 2.1.5 --- Factors influencing field emission efficiency --- p.11
Chapter 2.2 --- Applications --- p.11
Chapter 2.2.1 --- Operation of a Field Emission Displays --- p.11
Chapter 2.2.2 --- Basic structure of a Field Emission Displays --- p.13
Chapter 2.2.3 --- Parameters relevant to applications --- p.15
Chapter 2.3 --- The fabrication processes --- p.17
Chapter 2.3.1 --- The anisotropic wet etching method --- p.18
Chapter 2.3.2 --- The isotropic wet etching method --- p.19
Chapter 2.3.3 --- Field emission from coating materials --- p.20
Chapter 2.3.3.1 --- Coating enhancement --- p.20
Chapter 2.3.3.2 --- Diamond and diamond-like films --- p.21
Chapter 2.3.3.3 --- Metallic coatings --- p.22
Chapter 2.3.3.4 --- Porous silicon coatings --- p.22
Chapter 2.3.3.5 --- Silicon carbide coatings --- p.22
Chapter 2.3.4 --- Fabrication of field emitters with gate --- p.23
Chapter Chapter 3 --- Sample Preparation and Characterization Methods
Chapter 3.1 --- Sample preparation --- p.25
Chapter 3.2 --- The fabrication process
Chapter 3.2.1 --- Isotropic etching of silicon
Chapter 3.2.1.1 --- The anodization process --- p.25
Chapter 3.2.1.2 --- Porous silicon formation --- p.26
Chapter 3.2.2 --- Anistropic etching of silicon --- p.27
Chapter 3.2.3 --- The sputtering system --- p.28
Chapter 3.2.4 --- The MEVVA Ion Source Implanter --- p.30
Chapter 3.3 --- Characterization Methods
Chapter 3.3.1 --- Atomic Force Microscopy (AFM) --- p.32
Chapter 3.3.2 --- Scanning Electron Microscopy (SEM) --- p.34
Chapter 3.3.3 --- Field emission measurement
Chapter 3.3.3.1 --- Vacuum requirements --- p.35
Chapter 3.3.3.2 --- Testing system
Chapter 3.3.3.3 --- Fluctuation of field emission --- p.38
Chapter Chapter 4 --- Fabrication of Silicon Tips and their field emission charateristics
Chapter 4.1 --- The anodization etching process
Chapter 4.1.1 --- Introduction --- p.40
Chapter 4.1.2 --- Experimental details --- p.42
Chapter 4.1.3 --- Results and Discussions
Chapter 4.1.3.1 --- N type (100) sample --- p.45
Chapter 4.1.3.2 --- Ntype(lll) sample --- p.60
Chapter 4.1.3.3 --- Fluctuations of the emission current --- p.64
Chapter 4.1.3.4 --- The effect of Concentration of HF solution on First Step Anodization --- p.68
Chapter 4.1.3.5 --- The effect of the Concentration of HF solution on Second Step Anodization --- p.70
Chapter 4.1.3.6 --- Gated silicon field emitter --- p.70
Chapter 4.1.4 --- Conclusions --- p.73
Chapter 4.2 --- Anisotropic texturing process
Chapter 4.2.1 --- Introduction --- p.74
Chapter 4.2.2 --- Experimental details --- p.76
Chapter 4.2.3 --- Results and Discussions --- p.78
Chapter 4.2.4 --- Conclusion --- p.92
Chapter 4.3 --- Formation of Porous Silicon Layer on silicon
Chapter 4.3.1 --- Introduction --- p.93
Chapter 4.3.2 --- Experimental details --- p.94
Chapter 4.3.3 --- Results and Discussions --- p.95
Chapter 4.3.4 --- Conclusion --- p.100
Chapter 4.4 --- Chapter Summary --- p.101
Chapter Chapter 5 --- Improvement in the field emission characteristics of the silicon tips upon coating with low work function materials
Chapter 5.1 --- Amorphous carbon coating
Chapter 5.1.1 --- Introduction --- p.102
Chapter 5.1.2 --- Experimental details --- p.103
Chapter 5.1.3 --- Results and Discussions --- p.104
Chapter 5.1.4 --- Conclusion --- p.118
Chapter 5.2 --- Silicon carbide coated Silicon emitter by MEWA
Chapter 5.2.1 --- Introduction --- p.119
Chapter 5.2.2 --- Experimental details --- p.120
Chapter 5.2.3 --- Results and Discussions --- p.121
Chapter 5.2.4 --- Conclusion --- p.125
Chapter 5.3 --- Chapter Summary --- p.126
Chapter Chapter 6 --- Conclusions --- p.127
Reference --- p.134
List of publications --- p.140
Hilbert, Shawn A. "Pulse propagation of sound, light, and electrons." 2009. http://proquest.umi.com/pqdweb?did=1694329141&sid=3&Fmt=2&clientId=14215&RQT=309&VName=PQD.
Повний текст джерелаTitle from title screen (site viewed June 26, 2009). PDF text: xiii, 178 p. : ill. ; 10 Mb. UMI publication number: AAT 3350448 . Includes bibliographical references. Also available in microfilm and microfiche formats.
"A study of field emission properties of ion beam synthesized and modified SiC layers on Si." 2002. http://library.cuhk.edu.hk/record=b5891293.
Повний текст джерелаThesis (M.Phil.)--Chinese University of Hong Kong, 2002.
Includes bibliographical references (leaves 86-93).
Abstracts in English and Chinese.
Abstract --- p.i
Acknowledgement --- p.iv
Contents --- p.v
List of Figure Captions --- p.vi
List of Table Captions --- p.vii
Chapter Chapter 1 --- Introduction
Chapter 1.1 --- Introduction --- p.1
Chapter 1.2 --- Theory of Electron Field Emission --- p.1
Chapter 1.2.1 --- Fowler Nordheim Planar Field Emission Model for Metal --- p.2
Chapter 1.3 --- Goal of this Project --- p.9
Chapter Chapter 2 --- Sample Preparation and Characterization Methods
Chapter 2.1 --- Sample Preparation --- p.12
Chapter 2.1.1 --- MEVVA Implantation System --- p.13
Chapter 2.1.2 --- Implantation Conditions --- p.16
Chapter 2.1.3 --- Simulation by SRIM --- p.17
Chapter 2.2 --- Characterization Methods --- p.20
Chapter 2.2.1 --- AFM and CAFM --- p.20
Chapter 2.2.2 --- RBS --- p.22
Chapter 2.2.3 --- XPS --- p.24
Chapter 2.2.4 --- XRD --- p.27
Chapter 2.2.5 --- TEM --- p.28
Chapter 2.2.6 --- FE Measurement --- p.29
Chapter Chapter 3 --- FE Properties of IBS SiC layers
Chapter 3.1 --- Introduction --- p.31
Chapter 3.2 --- Field Enhancement Mechanisms for the IBS SiC Layers --- p.32
Chapter 3.3 --- Embedded Conducting Grains (ECG) Model of Local Field Enhancement --- p.45
Chapter 3.4 --- The Role of Conducting Grains in Field Enhancement --- p.48
Chapter Chapter 4 --- FE Properties of W modified IBS SiC layer
Chapter 4.1 --- Introduction --- p.58
Chapter 4.2 --- Experimental --- p.59
Chapter 4.3 --- Phase and Structural Evolution of W Modified IBS SiC Layers --- p.60
Chapter 4.3.1 --- XRD Results --- p.60
Chapter 4.3.2 --- XPS Results --- p.64
Chapter 4.3.3 --- TEM Results --- p.69
Chapter 4.3.4 --- AFM Results --- p.74
Chapter 4.4 --- Field Emission Properties --- p.76
Chapter Chapter 5 --- Conclusion --- p.84
Reference --- p.86
List of Publications --- p.94
Appendix --- p.96
SHARMA, ANAND. "FIELD EMISSION OF ELECTRONS FROM HEMISPHERICAL CONDUCTING CARBON NANOTUBE TIP INCLUDING THE EFFECT OF IMAGE FORCE." Thesis, 2016. http://dspace.dtu.ac.in:8080/jspui/handle/repository/14632.
Повний текст джерелаChen, Yi Wen Wang Ben. "Nanotube and nanofiber buckypaper cold cathode illumination experimental investigation /." 2006. http://etd.lib.fsu.edu/theses/available/etd-07102006-161808.
Повний текст джерелаAdvisor: Ben Wang, Florida State University, College of Engineering, Dept. of Industrial Engineering. Title and description from dissertation home page (viewed Sept. 22, 2006). Document formatted into pages; contains xii, 93 pages. Includes bibliographical references.
Liao, Po-Hsinag, and 廖柏翔. "Development of Field Emission Electron Gun for Desktop Electron Microscope." Thesis, 2018. http://ndltd.ncl.edu.tw/handle/3d5ybg.
Повний текст джерела國立清華大學
工程與系統科學系
106
With the development of technology, electron microscope has become an important observational tool in different major such as physics, chemistry, biology, and materials engineering. The source of electron microscope, it usually divide into two types, thermionic type and field emission type. Field emission type electron source usually have smaller tip radius than thermal type, so it can produce smaller electron source. Then, electron beam pass by condenser lens, a small spot size source is formed. Therefore, the brightness of the electron gun is much brighter than thermal type source. In addition, field emission source spectral energy distribution is close to monochromatic, and has smaller energy spread. So field emission source has better coherence that lead it obtain higher resolution. Although field-emission type electron gun have above advantages, but it need to maintain in high vacuum condition. Because the tip of the field emission electron gun can easily react with impurities in the air, and lead the needle tip blunt. When the needle tip is blunt, it will cause the field emission gun poor efficiency. So the field emission type electron gun needs lots of high vacuum equipment to maintain it stay in high vacuum condition and high efficiency. The purpose of this research is using cheaper and more convenient ways to produce a field emission electron gun tip. And then set it up on our lab’s group made Desktop Electron Microscope to improve the resolution. In this paper, we successfully fabricated a field electron gun tip using electrolytic machining. The radius of curvature of the electron gun tip is about 100 nm or less, and its reproduction rate is also high. Finally, we also tried to deposit ZrO on the tip to make thermionic (Schottky) type field electron gun. After that, we also design some components installed on our Desktop Electron Microscope to finish field emission microscope.
Liu, Cheng-Ting, and 劉正霆. "Synthesis of carbon nanocoils for electron field emission application." Thesis, 2017. http://ndltd.ncl.edu.tw/handle/41837239808384967366.
Повний текст джерела大同大學
電機工程學系(所)
105
In this thesis we use the thermal chemical vapor deposition system to grow the carbon nanocoils and apply them to field emission devices. Firstly, we use the photolithograpic process to define the arrays of hole patterns. Secondly, we use the plasma etching system to remove the Mo layer and wet etching to remove the SiO2 layer and form the holes on Si substrate. Finally, we grow the carbon nanocoils outo the arrays of Mo/SiO2/Si substrate. We compare the field emission characteristics between the diode and triode structures. The results show that the gate of the triode structure is beneficial to pull the electrons. We also try to add phosphors on the anode to observe the lighting phenomenon. The results also show that the lighting phenomenon of the carbon nanocoils is superior to that of the carbon nanotubes in the triode structure.
RACHANA. "FIELD EMISSION OF ELECTRONS BY TAKING INTO ACCOUNT THE DISTRIBUTION OF CHARGE ALONG THE LENGTH OF METALLIC CARBON NANOTUBES (CNTS)." Thesis, 2021. http://dspace.dtu.ac.in:8080/jspui/handle/repository/19026.
Повний текст джерелаLiu, Feng Xiang, and 劉鳳翔. "Processes and Research of Carbon Nanotube Field Emission Electron Source." Thesis, 2002. http://ndltd.ncl.edu.tw/handle/18022103617842045982.
Повний текст джерела中華大學
電機工程學系碩士班
90
In this thesis, we research field emission characteristic of Carbon Nanotubes, and fabricate the CNTs cathode. Carbon nanotubes (CNTs) cold cathodes were fabricated to replace the hot cathodes of cathode ray tubes (CRTs), because conventional hot cathode must be heated about 680℃. But now we don’t heat the cathode by using Carbon Nanotubes in this work. We just used a DC bias,then the emitter current was emitted to vacuum. It was compared Arc CNTs’ and CVD CNTs’ field emission characteristic, and used a printer to print the cathode once or twice. Then we use a tape to enhance field emission current. In this research, Arc CNTs’ field emission characteristic is better than CVD CNTs’, the result makes us to know that structure is very important. We also packaged the cathode to measured the I-V curve in a 17-inch CRT using the traditional method, and find a good result. Finally, we use nanosize Silver particle, because find a problem by SEM. And we believe the method can be better than previous method.
Natarajan, Srividya. "A Study of Field Emission Based Microfabricated Devices." Diss., 2008. http://hdl.handle.net/10161/675.
Повний текст джерелаThe primary goals of this study were to demonstrate and fully characterize a microscale ionization source (i.e. micro-ion source) and to determine the validity of impact ionization theory for microscale devices and pressures up to 100 mTorr. The field emission properties of carbon nanotubes (CNTs) along with Micro-Electro-Mechanical Systems (MEMS) design processes were used to achieve these goals. Microwave Plasma-enhanced CVD was used to grow vertically aligned Multi-Walled Carbon Nanotubes (MWNTs) on the microscale devices. A 4-dimensional parametric study focusing on CNT growth parameters confirmed that Fe catalyst thickness had a strong effect on MWNT diameter. The MWNT growth rate was seen to be a strong function of the methane-to-ammonia gas ratio during MWNT growth. A high methane-to-ammonia gas ratio was selected for MWNT growth on the MEMS devices in order to minimize growth time and ensure that the thermal budget of those devices was met.
A CNT-enabled microtriode device was fabricated and characterized. A new aspect of this device was the inclusion of a 10 micron-thick silicon dioxide electrical isolation layer. This thick oxide layer enabled anode current saturation and performance improvements such as an increase in dc amplification factor from 27 to 600. The same 3-panel device was also used as an ionization source. Ion currents were measured in the 3-panel micro-ion source for helium, argon, nitrogen and xenon in the 0.1 to 100 mTorr pressure range. A linear increase in ion current was observed for an increase in pressure. However, simulations indicated that the 3-panel design could be modified to improve performance as well as better understand device behavior. Thus, simulations and literature reports on electron impact ionization sources were used to design a new 4-panel micro-ion source. The 4-panel micro-ion source showed an approximate 10-fold performance improvement compared to the 3-panel ion source device. The improvement was attributed to the increased electron current and improved ion collection efficiency of the 4-panel device. Further, the same device was also operated in a 3-panel mode and showed superior performance compared to the original 3-panel device, mainly because of increased ion collection efficiency.
The effect of voltages applied to the different electrodes in the 4-panel micro-ion source on ion source performance was studied to better understand device behavior. The validity of the ion current equation (which was developed for macroscale ion sources operating at low pressures) in the 4-panel micro-ion source was studied. Experimental ion currents were measured for helium, argon and xenon in the 3 to 100 mTorr pressure range. For comparison, theoretical ion currents were calculated using the ion current equation for the 4-panel micro-ion source utilizing values calculated from SIMION simulations and measured electron currents. The measured ion current values in the 3 to 20 mTorr pressure range followed the calculated ion currents quite closely. A significant deviation was observed in the 20-100 mTorr pressure range. The experimental ion current values were used to develop a corrected empirical model for the 4-panel micro-ion source in this high pressure range (i.e., 3 to 100 mTorr). The role of secondary electrons and electron path lengths at higher pressures is discussed.
Dissertation
Chen, Chia-Huan, and 陳嘉桓. "Analysis of Field Electron Emission Characteristics of Chemically Modified Carbon Nanotubes." Thesis, 2009. http://ndltd.ncl.edu.tw/handle/06697097125512745040.
Повний текст джерела國立臺灣科技大學
光電工程研究所
97
Carbon nanotubes (CNTs) were synthesized on carbon cloth by thermal chemical vapor deposition (TCVD). To enhance the field emission current, catalyst metal at the tip of CNTs was removed by chemical modifications with nitric acid (HNO3). The field emission characteristics of CNTs with various HNO3 immersion time were investigated. As a result, when the HNO3 immersion time was 15 min, the threshold electric field (Eth) has the lowest value of 1.9 V/um. When the immersion time was extended, the Eth increased due to defects at the surface of CNTs. Although the Eth was decreased with the optimal condition of HNO3 treatment, the long-term stability of as treated CNTs was poor. To improve the stability, ZnO nanostructures were synthesized on the surface of the open-end CNTs. Consequently, the long-term stability of the CNTs was improved and an even lower Eth, i.e. 1.5 V/um, was obtained.