Статті в журналах з теми "Field-effect doping"
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Noll, Stefan, Martin Rambach, Michael Grieb, Dick Scholten, Anton J. Bauer, and Lothar Frey. "Effect of Shallow n-Doping on Field Effect Mobility in p-Doped Channels of 4H-SiC MOS Field Effect Transistors." Materials Science Forum 778-780 (February 2014): 702–5. http://dx.doi.org/10.4028/www.scientific.net/msf.778-780.702.
Повний текст джерелаHuseynova, Gunel, and Vladislav Kostianovskii. "Doped organic field-effect transistors." Material Science & Engineering International Journal 2, no. 6 (December 5, 2018): 212–15. http://dx.doi.org/10.15406/mseij.2018.02.00059.
Повний текст джерелаRyu, Min-Yeul, Ho-Kyun Jang, Kook Jin Lee, Mingxing Piao, Seung-Pil Ko, Minju Shin, Junghwan Huh, and Gyu-Tae Kim. "Triethanolamine doped multilayer MoS2 field effect transistors." Physical Chemistry Chemical Physics 19, no. 20 (2017): 13133–39. http://dx.doi.org/10.1039/c7cp00589j.
Повний текст джерелаKUBOZONO, Yoshihiro, Yumiko KAJI, Keiko OGAWA, Yasuyuki SUGAWARA, Ritsuko EGUCHI, Koki AKAIKE, Takashi KAMBE, and Akihiko FUJIWARA. "Field-effect Carrier Doping to Organic Molecular Crystals." Hyomen Kagaku 32, no. 1 (2011): 27–32. http://dx.doi.org/10.1380/jsssj.32.27.
Повний текст джерелаGoswami, Yogesh, Pranav Asthana, Shibir Basak, and Bahniman Ghosh. "Junctionless Tunnel Field Effect Transistor with Nonuniform Doping." International Journal of Nanoscience 14, no. 03 (May 19, 2015): 1450025. http://dx.doi.org/10.1142/s0219581x14500252.
Повний текст джерелаRiederer, Felix, Thomas Grap, Sergej Fischer, Marcel R. Mueller, Daichi Yamaoka, Bin Sun, Charu Gupta, Klaus T. Kallis, and Joachim Knoch. "Alternatives for Doping in Nanoscale Field-Effect Transistors." physica status solidi (a) 215, no. 7 (January 30, 2018): 1700969. http://dx.doi.org/10.1002/pssa.201700969.
Повний текст джерелаGünther, Alrun A., Michael Sawatzki, Petr Formánek, Daniel Kasemann, and Karl Leo. "Contact Doping for Vertical Organic Field‐Effect Transistors." Advanced Functional Materials 26, no. 5 (December 14, 2015): 768–75. http://dx.doi.org/10.1002/adfm.201504377.
Повний текст джерелаLi, Jingqi, Xiaofeng Chen, Gheorghe Iordache, Nini Wei, and Husam N. Alshareef. "Characteristics of Vertical Carbon Nanotube Field-Effect Transistors on p-GaAs." Nanoscience and Nanotechnology Letters 11, no. 9 (September 1, 2019): 1239–46. http://dx.doi.org/10.1166/nnl.2019.2998.
Повний текст джерелаLuo, Xuyi, Kraig Andrews, Tianjiao Wang, Arthur Bowman, Zhixian Zhou, and Ya-Qiong Xu. "Reversible photo-induced doping in WSe2 field effect transistors." Nanoscale 11, no. 15 (2019): 7358–63. http://dx.doi.org/10.1039/c8nr09929d.
Повний текст джерелаWen, Xiao Wei, Chu De Feng, Li Dong Chen, and Shi Ming Huang. "Effect of Different Doping on the Structure and Field-Stability of PMNT Ceramics." Key Engineering Materials 336-338 (April 2007): 36–38. http://dx.doi.org/10.4028/www.scientific.net/kem.336-338.36.
Повний текст джерелаSong, Yi, and Xiuling Li. "Scaling junctionless multigate field-effect transistors by step-doping." Applied Physics Letters 105, no. 22 (December 2014): 223506. http://dx.doi.org/10.1063/1.4902864.
Повний текст джерелаKumar, M. Jagadesh, and Sindhu Janardhanan. "Doping-Less Tunnel Field Effect Transistor: Design and Investigation." IEEE Transactions on Electron Devices 60, no. 10 (October 2013): 3285–90. http://dx.doi.org/10.1109/ted.2013.2276888.
Повний текст джерелаSo, Woo-young, J. Magnus Wikberg, David V. Lang, Oleg Mitrofanov, Christian L. Kloc, Theo Siegrist, Arthur M. Sergent, and Arthur P. Ramirez. "Mobility-independent doping in crystalline rubrene field-effect transistors." Solid State Communications 142, no. 9 (June 2007): 483–86. http://dx.doi.org/10.1016/j.ssc.2007.03.040.
Повний текст джерелаPatil, M. B., S. N. Mohammad, and H. Morkoç. "Modeling of field-effect transistors with laterally graded doping." Solid-State Electronics 32, no. 9 (September 1989): 791–95. http://dx.doi.org/10.1016/0038-1101(89)90013-0.
Повний текст джерелаKim, Youngrok, Katharina Broch, Woocheol Lee, Heebeom Ahn, Jonghoon Lee, Daekyoung Yoo, Junwoo Kim, et al. "Highly Stable Contact Doping in Organic Field Effect Transistors by Dopant‐Blockade Method." Advanced Functional Materials 30, no. 28 (May 25, 2020): 2000058. http://dx.doi.org/10.1002/adfm.202000058.
Повний текст джерелаMikami, Kyota, Keita Tachiki, Koji Ito, and Tsunenobu Kimoto. "Body doping dependence of field-effect mobility in both n- and p-channel 4H-SiC metal-oxide-semiconductor field-effect transistors with nitrided gate oxides." Applied Physics Express 15, no. 3 (February 16, 2022): 036503. http://dx.doi.org/10.35848/1882-0786/ac516b.
Повний текст джерелаImamura, Gaku, and Koichiro Saiki. "Effect of UV light-induced nitrogen doping on the field effect transistor characteristics of graphene." RSC Advances 5, no. 86 (2015): 70522–26. http://dx.doi.org/10.1039/c5ra12002k.
Повний текст джерелаIqbal, Muhammad Waqas, Muhammad Zahir Iqbal, Muhammad Farooq Khan, Muhammad Arslan Shehzad, Yongho Seo, and Jonghwa Eom. "Deep-ultraviolet-light-driven reversible doping of WS2 field-effect transistors." Nanoscale 7, no. 2 (2015): 747–57. http://dx.doi.org/10.1039/c4nr05129g.
Повний текст джерелаSUGAHARA, MASANORI, and NIKOLAI N. BOGOLUBOV. "FIELD-THEORETIC FOUNDATION OF NO-FIELD QUANTUM HALL EFFECT." Modern Physics Letters B 16, no. 18 (August 10, 2002): 645–59. http://dx.doi.org/10.1142/s0217984902004196.
Повний текст джерелаWu, Enxiu, Yuan Xie, Jing Zhang, Hao Zhang, Xiaodong Hu, Jing Liu, Chongwu Zhou, and Daihua Zhang. "Dynamically controllable polarity modulation of MoTe2 field-effect transistors through ultraviolet light and electrostatic activation." Science Advances 5, no. 5 (May 2019): eaav3430. http://dx.doi.org/10.1126/sciadv.aav3430.
Повний текст джерелаHuang, Bao Xin, Jun Hua Wang, Zhen Hua Wang, Ke Zheng Chen, Yi Hua Liu, and Liang Mo Mei. "The Enhanced Magnetoresistance Effect of La0.67Sr0.33MnO3 with Pentavalent Ions Addition." Materials Science Forum 675-677 (February 2011): 1105–8. http://dx.doi.org/10.4028/www.scientific.net/msf.675-677.1105.
Повний текст джерелаHürner, Andreas, Heinz Mitlehner, Tobias Erlbacher, Anton J. Bauer, and Lothar Frey. "Conduction Loss Reduction for Bipolar Injection Field-Effect-Transistors (BIFET)." Materials Science Forum 858 (May 2016): 917–20. http://dx.doi.org/10.4028/www.scientific.net/msf.858.917.
Повний текст джерелаSEN, P., N. SISODIA, R. K. CHOUBEY, S. KAR, and K. S. BARTWAL. "EFFECT OF MgO DOPING ON COERCIVE FIELD IN LiNbO3 CRYSTALS." Journal of Nonlinear Optical Physics & Materials 17, no. 02 (June 2008): 175–83. http://dx.doi.org/10.1142/s0218863508004068.
Повний текст джерелаSchön, J. H., M. Dorget, F. C. Beuran, X. Z. Zu, E. Arushanov, C. Deville Cavellin, and M. Laguës. "Superconductivity in CaCuO2 as a result of field-effect doping." Nature 414, no. 6862 (November 22, 2001): 434–36. http://dx.doi.org/10.1038/35106539.
Повний текст джерелаWessely, F., T. Krauss, and U. Schwalke. "CMOS without doping: Multi-gate silicon-nanowire field-effect-transistors." Solid-State Electronics 70 (April 2012): 33–38. http://dx.doi.org/10.1016/j.sse.2011.11.011.
Повний текст джерелаWang, Lu, Jiaxin Zheng, Jing Zhou, Rui Qin, Hong Li, Wai-Ning Mei, Shigeru Nagase, and Jing Lu. "Tuning graphene nanoribbon field effect transistors via controlling doping level." Theoretical Chemistry Accounts 130, no. 2-3 (August 30, 2011): 483–89. http://dx.doi.org/10.1007/s00214-011-1026-5.
Повний текст джерелаWu, San Lein, and Shoou Jinn Chang. "Si field-effect transistor with doping dipole in buffer layer." Applied Physics Letters 75, no. 18 (November 1999): 2848–50. http://dx.doi.org/10.1063/1.125170.
Повний текст джерелаMaddalena, F., E. J. Meijer, K. Asadi, D. M. de Leeuw, and P. W. M. Blom. "Doping kinetics of organic semiconductors investigated by field-effect transistors." Applied Physics Letters 97, no. 4 (July 26, 2010): 043302. http://dx.doi.org/10.1063/1.3466903.
Повний текст джерелаHepp, A., H. Heil, R. Schmechel, and H. von Seggern. "Electrochemical Interface Doping in Organic Light Emitting Field Effect Transistors." Advanced Engineering Materials 7, no. 10 (October 2005): 957–60. http://dx.doi.org/10.1002/adem.200500118.
Повний текст джерелаLee, Byoung Hoon, Guillermo C. Bazan, and Alan J. Heeger. "Doping-Induced Carrier Density Modulation in Polymer Field-Effect Transistors." Advanced Materials 28, no. 1 (November 20, 2015): 57–62. http://dx.doi.org/10.1002/adma.201504307.
Повний текст джерелаApostolova, I. N., A. T. Apostolov, and J. M. Wesselinowa. "Magnetization, Band Gap and Specific Heat of Pure and Ion Doped MnFe2O4 Nanoparticles." Magnetochemistry 9, no. 3 (March 4, 2023): 76. http://dx.doi.org/10.3390/magnetochemistry9030076.
Повний текст джерелаQin, Xulei, Qidong Shi, Feng Shi, Ye Li, and De Song. "Effect of Gradient Doping on Charge Collection Efficiency of EBCMOS Devices." Advances in Multimedia 2022 (August 29, 2022): 1–8. http://dx.doi.org/10.1155/2022/5157252.
Повний текст джерелаTopuria, Teya, Edward M. James, Nigel D. Browning, and Zhiyong Ma. "Direct Atomic Scale Characterization of Interfaces and Doping Layers in Field-Effect Transistors." Microscopy and Microanalysis 6, S2 (August 2000): 140–41. http://dx.doi.org/10.1017/s1431927600033195.
Повний текст джерелаLiu, Maomao, Sichen Wei, Simran Shahi, Hemendra Nath Jaiswal, Paolo Paletti, Sara Fathipour, Maja Remškar, et al. "Enhanced carrier transport by transition metal doping in WS2 field effect transistors." Nanoscale 12, no. 33 (2020): 17253–64. http://dx.doi.org/10.1039/d0nr01573c.
Повний текст джерелаBellone, S., G. Cocorullo, G. Fallica, and S. Musumeci. "Current gain enhancement effect by gate doping in bipolar-mode field-effect transistor." IEEE Transactions on Electron Devices 37, no. 1 (1990): 303–5. http://dx.doi.org/10.1109/16.43832.
Повний текст джерелаGuo, B., L. Fang, B. Zhang, and J. R. Gong. "Doping effect on shift of threshold voltage of graphene-based field-effect transistors." Electronics Letters 47, no. 11 (2011): 663. http://dx.doi.org/10.1049/el.2011.0770.
Повний текст джерелаWoo, Sung Oh, and Winfried Teizer. "Electron Irradiation of Graphene Field Effect Transistor Devices." MRS Proceedings 1549 (2013): 35–40. http://dx.doi.org/10.1557/opl.2013.946.
Повний текст джерелаXing, Boran, Ying Yu, Jiadong Yao, Xinyue Niu, Xiaoyuan Yan, Yali Liu, Xiaoxiang Wu, et al. "Surface charge transfer doping and effective passivation of black phosphorus field effect transistors." Journal of Materials Chemistry C 8, no. 19 (2020): 6595–604. http://dx.doi.org/10.1039/d0tc00740d.
Повний текст джерелаWang, Shunfeng, Weijie Zhao, Francesco Giustiniano, and Goki Eda. "Effect of oxygen and ozone on p-type doping of ultra-thin WSe2 and MoSe2 field effect transistors." Physical Chemistry Chemical Physics 18, no. 6 (2016): 4304–9. http://dx.doi.org/10.1039/c5cp07194a.
Повний текст джерелаZHANG, L., G. LIU, X. LENG, X. B. XU, S. Y. DING, Y. L. JIAO, and L. XIAO. "MAGNETIZATION OF Ag-Y1.8Ba2.4Cu3.4O7-x." International Journal of Modern Physics B 19, no. 01n03 (January 30, 2005): 311–13. http://dx.doi.org/10.1142/s0217979205028475.
Повний текст джерелаLashkov, Ilia, Kevin Krechan, Katrin Ortstein, Felix Talnack, Shu-Jen Wang, Stefan C. B. Mannsfeld, Hans Kleemann, and Karl Leo. "Modulation Doping for Threshold Voltage Control in Organic Field-Effect Transistors." ACS Applied Materials & Interfaces 13, no. 7 (February 11, 2021): 8664–71. http://dx.doi.org/10.1021/acsami.0c22224.
Повний текст джерелаA. Hasan, Zaid. "Study the Effect of Magnetic Field on Polymer Doping TiO2 Nanoparticles." NeuroQuantology 17, no. 12 (December 30, 2019): 39–43. http://dx.doi.org/10.14704/nq.2019.17.12.nq19114.
Повний текст джерелаLim, Dongsuk, E. S. Kannan, Inyeal Lee, Servin Rathi, Lijun Li, Yoontae Lee, Muhammad Atif Khan, Moonshik Kang, Jinwoo Park, and Gil-Ho Kim. "High performance MoS2-based field-effect transistor enabled by hydrazine doping." Nanotechnology 27, no. 22 (April 21, 2016): 225201. http://dx.doi.org/10.1088/0957-4484/27/22/225201.
Повний текст джерелаZou, J., A. Gopinath, T. Akinwande, and M. S. Shur. "Heterostructure field effect transistor with doping dipole in charge control layer." Electronics Letters 26, no. 14 (1990): 964. http://dx.doi.org/10.1049/el:19900627.
Повний текст джерелаSundararajan, Abhishek, Mathias J. Boland, D. Patrick Hunley, and Douglas R. Strachan. "Doping and hysteretic switching of polymer-encapsulated graphene field effect devices." Applied Physics Letters 103, no. 25 (December 16, 2013): 253505. http://dx.doi.org/10.1063/1.4851956.
Повний текст джерелаBezegh, Klara, Andras Bezegh, Jiri Janata, Urs Oesch, Aiping Xu, and Wilhelm Simon. "Multisensing ion-selective field effect transistors prepared by ionophore doping technique." Analytical Chemistry 59, no. 24 (December 15, 1987): 2846–48. http://dx.doi.org/10.1021/ac00151a005.
Повний текст джерелаSchaur, Stefan, Philipp Stadler, Beatriz Meana-Esteban, Helmut Neugebauer, and N. Serdar Sariciftci. "Electrochemical doping for lowering contact barriers in organic field effect transistors." Organic Electronics 13, no. 8 (August 2012): 1296–301. http://dx.doi.org/10.1016/j.orgel.2012.03.020.
Повний текст джерелаGhodrati, Maryam, Ali Mir, and Ali Naderi. "Proposal of a doping-less tunneling carbon nanotube field-effect transistor." Materials Science and Engineering: B 265 (March 2021): 115016. http://dx.doi.org/10.1016/j.mseb.2020.115016.
Повний текст джерелаDu, Yuchen, Lingming Yang, Hong Zhou, and Peide D. Ye. "Performance Enhancement of Black Phosphorus Field-Effect Transistors by Chemical Doping." IEEE Electron Device Letters 37, no. 4 (April 2016): 429–32. http://dx.doi.org/10.1109/led.2016.2535905.
Повний текст джерелаWen-Shiung Lour, Jung-Hui Tsai, Lih-Wen Laih, and Wen-Chau Liu. "Influence of channel doping-profile on camel-gate field effect transistors." IEEE Transactions on Electron Devices 43, no. 6 (June 1996): 871–76. http://dx.doi.org/10.1109/16.502117.
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