Добірка наукової літератури з теми "Field-effect doping"
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Статті в журналах з теми "Field-effect doping"
Noll, Stefan, Martin Rambach, Michael Grieb, Dick Scholten, Anton J. Bauer, and Lothar Frey. "Effect of Shallow n-Doping on Field Effect Mobility in p-Doped Channels of 4H-SiC MOS Field Effect Transistors." Materials Science Forum 778-780 (February 2014): 702–5. http://dx.doi.org/10.4028/www.scientific.net/msf.778-780.702.
Повний текст джерелаHuseynova, Gunel, and Vladislav Kostianovskii. "Doped organic field-effect transistors." Material Science & Engineering International Journal 2, no. 6 (December 5, 2018): 212–15. http://dx.doi.org/10.15406/mseij.2018.02.00059.
Повний текст джерелаRyu, Min-Yeul, Ho-Kyun Jang, Kook Jin Lee, Mingxing Piao, Seung-Pil Ko, Minju Shin, Junghwan Huh, and Gyu-Tae Kim. "Triethanolamine doped multilayer MoS2 field effect transistors." Physical Chemistry Chemical Physics 19, no. 20 (2017): 13133–39. http://dx.doi.org/10.1039/c7cp00589j.
Повний текст джерелаKUBOZONO, Yoshihiro, Yumiko KAJI, Keiko OGAWA, Yasuyuki SUGAWARA, Ritsuko EGUCHI, Koki AKAIKE, Takashi KAMBE, and Akihiko FUJIWARA. "Field-effect Carrier Doping to Organic Molecular Crystals." Hyomen Kagaku 32, no. 1 (2011): 27–32. http://dx.doi.org/10.1380/jsssj.32.27.
Повний текст джерелаGoswami, Yogesh, Pranav Asthana, Shibir Basak, and Bahniman Ghosh. "Junctionless Tunnel Field Effect Transistor with Nonuniform Doping." International Journal of Nanoscience 14, no. 03 (May 19, 2015): 1450025. http://dx.doi.org/10.1142/s0219581x14500252.
Повний текст джерелаRiederer, Felix, Thomas Grap, Sergej Fischer, Marcel R. Mueller, Daichi Yamaoka, Bin Sun, Charu Gupta, Klaus T. Kallis, and Joachim Knoch. "Alternatives for Doping in Nanoscale Field-Effect Transistors." physica status solidi (a) 215, no. 7 (January 30, 2018): 1700969. http://dx.doi.org/10.1002/pssa.201700969.
Повний текст джерелаGünther, Alrun A., Michael Sawatzki, Petr Formánek, Daniel Kasemann, and Karl Leo. "Contact Doping for Vertical Organic Field‐Effect Transistors." Advanced Functional Materials 26, no. 5 (December 14, 2015): 768–75. http://dx.doi.org/10.1002/adfm.201504377.
Повний текст джерелаLi, Jingqi, Xiaofeng Chen, Gheorghe Iordache, Nini Wei, and Husam N. Alshareef. "Characteristics of Vertical Carbon Nanotube Field-Effect Transistors on p-GaAs." Nanoscience and Nanotechnology Letters 11, no. 9 (September 1, 2019): 1239–46. http://dx.doi.org/10.1166/nnl.2019.2998.
Повний текст джерелаLuo, Xuyi, Kraig Andrews, Tianjiao Wang, Arthur Bowman, Zhixian Zhou, and Ya-Qiong Xu. "Reversible photo-induced doping in WSe2 field effect transistors." Nanoscale 11, no. 15 (2019): 7358–63. http://dx.doi.org/10.1039/c8nr09929d.
Повний текст джерелаWen, Xiao Wei, Chu De Feng, Li Dong Chen, and Shi Ming Huang. "Effect of Different Doping on the Structure and Field-Stability of PMNT Ceramics." Key Engineering Materials 336-338 (April 2007): 36–38. http://dx.doi.org/10.4028/www.scientific.net/kem.336-338.36.
Повний текст джерелаДисертації з теми "Field-effect doping"
Nukala, Prathyusha. "Development of Silicon Nanowire Field Effect Transistors." Thesis, University of North Texas, 2011. https://digital.library.unt.edu/ark:/67531/metadc103364/.
Повний текст джерелаLiu, Shiyi. "Understanding Doped Organic Field-Effect Transistors." Kent State University / OhioLINK, 2019. http://rave.ohiolink.edu/etdc/view?acc_num=kent1574127009556301.
Повний текст джерелаRandell, Heather Eve. "Applications of stress from boron doping and other challenges in silicon technology." [Gainesville, Fla.] : University of Florida, 2005. http://purl.fcla.edu/fcla/etd/UFE0010292.
Повний текст джерелаPeriwal, Priyanka. "VLS growth and characterization of axial Si-SiGe heterostructured nanowire for tunnel field effect transistors." Thesis, Grenoble, 2014. http://www.theses.fr/2014GRENT045.
Повний текст джерелаAfter more than 30 years of successful scaling of MOSFET for increasing the performance and packing density, several limitations to further performance enhancements are now arising, power dissipation is one of the most important one. As scaling continues, there is a need to develop alternative devices with subthreshold slope below 60 mV/decade. In particular, tunnel field effect transistors, where the carriers are injected by quantum band to band tunneling mechanism can be promising candidate for low-power design. But, such devices require the implementation of peculiar architectures like axial heterostructured nanowires with abrupt interface. Using Au catalyzed vapor-liquid-solid synthesis of nanowires, reservoir effect restrains the formation of sharp junctions. In this context, this thesis addresses the growth of axial Si and Si1-xGex heterostructured nanowire with controlled interfacial abruptness and controlled doping using Au catalyzed VLS growth by RP-CVD. Firstly, we identify the growth conditions to realize sharp Si/Si1-xGex and Si1-xGex/Si interfacial abruptness. The two heterointerfaces are always asymmetric irrespective of the Ge concentration or nanowire diameter or growth conditions. Secondly, we study the problematics involved by the addition of dopant atoms and focus on the different approaches to realize taper free NWs. We discuss the influence of growth parameters (gas fluxes (Si or Ge), dopant ratio and pressure) on NW morphology and carrier concentration. With our growth process, we could successfully grow p-I, n-I, p-n, p-i-n type junctions in NWs. Thirdly, we present scanning probe microscopy to be a potential tool to delineate doped and hetero junctions in these as-grown nanowires. Finally, we will integrate the p-i-n junction in the NW in omega gate configuration
Sundararajan, Abhishek. "A STUDY ON ATOMICALLY THIN ULTRA SHORT CONDUCTING CHANNELS, BREAKDOWN, AND ENVIRONMENTAL EFFECTS." UKnowledge, 2015. http://uknowledge.uky.edu/physastron_etds/27.
Повний текст джерелаKrishnan, Bharat. "DEVELOPMENT OF SIMULATION FRAMEWORK FOR THE ANALYSIS OF NON-IDEAL EFFECTS IN DOPING PROFILE MEASUREMENT USING CAPACITANCE ? VOLTAGE TECHNIQUE." MSSTATE, 2005. http://sun.library.msstate.edu/ETD-db/theses/available/etd-04082005-092339/.
Повний текст джерелаShin, Nara [Verfasser], Karl [Gutachter] Leo, Stefan [Gutachter] Mannsfeld, and Sebastian [Gutachter] Reineke. "Enhancement of n-channel Organic Field-Effect Transistor Performance through Surface Doping and Modification of the Gate Oxide by Aminosilanes / Nara Shin ; Gutachter: Karl Leo, Stefan Mannsfeld, Sebastian Reineke." Dresden : Technische Universität Dresden, 2019. http://d-nb.info/1230578196/34.
Повний текст джерелаYoo, Kyung-Dong. "Two-dimensional dopant profiling for shallow junctions by TEM and AFM." Thesis, University of Oxford, 2000. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.342122.
Повний текст джерелаWinkler, Felix [Verfasser], Johann W. [Gutachter] Bartha, and Christian [Gutachter] Wenger. "Through Silicon Via Field-Effect Transistor with Hafnia-based Ferroelectrics and the Doping of Silicon by Gallium Implantation Utilizing a Focused Ion Beam System / Felix Winkler ; Gutachter: Johann W. Bartha, Christian Wenger." Dresden : Technische Universität Dresden, 2020. http://d-nb.info/122731227X/34.
Повний текст джерелаWehrfritz, Peter. "Herstellung und Charakterisierung von Feldeffekttransistoren mit epitaktischem Graphen." Doctoral thesis, Universitätsbibliothek Chemnitz, 2015. http://nbn-resolving.de/urn:nbn:de:bsz:ch1-qucosa-172853.
Повний текст джерелаКниги з теми "Field-effect doping"
Fred, Schubert E., ed. Delta-doping of semiconductors. Cambridge: Cambridge University Press, 1996.
Знайти повний текст джерелаSchubert, E. F. Delta-doping of Semiconductors. Cambridge University Press, 2005.
Знайти повний текст джерелаPanigrahi, Muktikanta, and Arpan Kumar Nayak. Polyaniline based Composite for Gas Sensors. IOR PRESS, 2021. http://dx.doi.org/10.34256/ioriip212.
Повний текст джерелаЧастини книг з теми "Field-effect doping"
Raushan, Mohd Adil, Mohd Mustaqeem, Shameem Ahmad, and Mohd Jawaid Siddiqui. "Impact of Pocket in a Doping-Less Tunnel Field Effect Transistor." In Proceedings of 6th International Conference on Recent Trends in Computing, 189–96. Singapore: Springer Singapore, 2021. http://dx.doi.org/10.1007/978-981-33-4501-0_18.
Повний текст джерелаDutta, Ritam, and Nitai Paitya. "Effect of Pocket Intrinsic Doping on Double and Triple Gate Tunnel Field Effect Transistors." In Lecture Notes in Electrical Engineering, 249–58. Singapore: Springer Singapore, 2019. http://dx.doi.org/10.1007/978-981-15-0829-5_25.
Повний текст джерелаWen, Xiao Wei, Chu De Feng, Li Dong Chen, and Shi Ming Huang. "Effect of Different Doping on the Structure and Field-Stability of PMNT Ceramics." In Key Engineering Materials, 36–38. Stafa: Trans Tech Publications Ltd., 2007. http://dx.doi.org/10.4028/0-87849-410-3.36.
Повний текст джерелаTochihara, Shinjiro, Masami Mashino, Hiroshi Yasuoka, Hiromasa Mazaki, Minoru Osada, and Masato Kakihana. "Effect of Ca Doping on the Lower Critical Field of YBa2Cu3O7-d Single Crystals." In Advances in Superconductivity XI, 267–70. Tokyo: Springer Japan, 1999. http://dx.doi.org/10.1007/978-4-431-66874-9_58.
Повний текст джерела"Junctionless Devices Without Any Chemical Doping." In Junctionless Field-Effect Transistors, 281–325. Wiley, 2019. http://dx.doi.org/10.1002/9781119523543.ch7.
Повний текст джерелаA. Islam, Rashed. "Doping Effect on Piezoelectric, Magnetic and Magnetoelectric Properties of Perovskite—Ferromagnetic Magnetoelectric Composites." In Piezoelectric Actuators - Principles, Design, Experiments and Applications [Working Title]. IntechOpen, 2021. http://dx.doi.org/10.5772/intechopen.95604.
Повний текст джерелаKresin, Vladimir Z., Sergei G. Ovchinnikov, and Stuart A. Wolf. "Materials I: High-Tc Copper Oxides." In Superconducting State, 228–80. Oxford University Press, 2021. http://dx.doi.org/10.1093/oso/9780198845331.003.0005.
Повний текст джерелаTiwari, Sandip. "Light interactions with semiconductors." In Semiconductor Physics, 454–92. Oxford University Press, 2020. http://dx.doi.org/10.1093/oso/9780198759867.003.0012.
Повний текст джерелаSharma, Sakshi, A. K. Shrivastav, Anjali Oudhia, and Mohan L. Verma. "The Advancement in Research and Technology with New Kinds of Hollow Structures." In Advanced Materials and Nano Systems: Theory and Experiment (Part-1), 213–33. BENTHAM SCIENCE PUBLISHERS, 2022. http://dx.doi.org/10.2174/9789815050745122010014.
Повний текст джерелаShams, Shamsiya, and B. Bindhu. "Two-dimensional Functionalized Hexagonal Boron Nitride (2D h-BN) Nanomaterials for Energy Storage Applications." In Current and Future Developments in Nanomaterials and Carbon Nanotubes, 119–40. BENTHAM SCIENCE PUBLISHERS, 2022. http://dx.doi.org/10.2174/9789815050714122030010.
Повний текст джерелаТези доповідей конференцій з теми "Field-effect doping"
Radha Krishnan, Raj Kishen, Shiyi Liu, Drona Dahal, Pushpa R. Paudel, and Bjorn Lussem. "Organic field effect transistors with bulk low doping." In Organic and Hybrid Field-Effect Transistors XX, edited by Oana D. Jurchescu and Iain McCulloch. SPIE, 2021. http://dx.doi.org/10.1117/12.2594721.
Повний текст джерелаMoule, Adam J., Tucker L. Murrey, Ian E. Jacobs, Zaira I. Bedolla-Valdez, Jan Saska, Goktug A. Gonel, Alice Fergerson, et al. "Understanding the driving force for solution molecular doping." In Organic and Hybrid Field-Effect Transistors XX, edited by Oana D. Jurchescu and Iain McCulloch. SPIE, 2021. http://dx.doi.org/10.1117/12.2595855.
Повний текст джерелаNielsen, Christian. "Charge transport and doping in structurally modified polythiophenes (Conference Presentation)." In Organic and Hybrid Field-Effect Transistors XVIII, edited by Oana D. Jurchescu and Iain McCulloch. SPIE, 2019. http://dx.doi.org/10.1117/12.2528329.
Повний текст джерелаSingh, Prabhat, Dip Prakash Samajdar, and Dharmendra Singh Yadav. "Doping and Dopingless Tunnel Field Effect Transistor." In 2021 6th International Conference for Convergence in Technology (I2CT). IEEE, 2021. http://dx.doi.org/10.1109/i2ct51068.2021.9418076.
Повний текст джерелаVijayvargiya, Vikas, and Santosh Vishvakarma. "Effect of doping profile on tunneling field effect transistor performance." In 2013 Spanish Conference on Electron Devices (CDE). IEEE, 2013. http://dx.doi.org/10.1109/cde.2013.6481376.
Повний текст джерелаLin, Yu-Ming, Damon B. Farmer, George S. Tulevski, Sheng Xu, Roy G. Gordon, and Phaedon Avouris. "Chemical Doping of Graphene Nanoribbon Field-Effect Devices." In 2008 66th Annual Device Research Conference (DRC). IEEE, 2008. http://dx.doi.org/10.1109/drc.2008.4800721.
Повний текст джерелаLiu, Dexing, Weihong Huang, Qinqi Ren, and Min Zhang. "A Photoinduced Electrostatic Doping Effect in Carbon Nanotube Field-Effect Transistors." In 2021 IEEE 21st International Conference on Nanotechnology (NANO). IEEE, 2021. http://dx.doi.org/10.1109/nano51122.2021.9514302.
Повний текст джерелаManavizadeh, N., F. Raissi, and E. Asl Soleimani. "The effect of the doping concentration on nanoscale field effect diode performance." In 2011 12th International Conference on Ultimate Integration on Silicon (ULIS). IEEE, 2011. http://dx.doi.org/10.1109/ulis.2011.5757992.
Повний текст джерелаLim, B. S., M. K. Md Arshad, Noraini Othman, M. F. M. Fathil, M. F. Fatin, and U. Hashim. "The impact of channel doping in junctionless field effect transistor." In 2014 IEEE 11th International Conference on Semiconductor Electronics (ICSE). IEEE, 2014. http://dx.doi.org/10.1109/smelec.2014.6920808.
Повний текст джерелаYadav, Dharmendra Singh, Dheeraj Sharma, Rahul Agrawal, Gaurav Prajapati, Sukeshni Tirkey, Bhagwan Ram Raad, and Varun Bajaj. "Temperature based performance analysis of doping-less tunnel field effect transistor." In 2017 International Conference on Information, Communication, Instrumentation and Control (ICICIC). IEEE, 2017. http://dx.doi.org/10.1109/icomicon.2017.8279131.
Повний текст джерела