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Статті в журналах з теми "Fiabilité RF"
Ritzler, Barry. "Personality Factors in Genocide: The Rorschachs of Nazi War Criminals." Rorschachiana 22, no. 1 (January 1997): 67–91. http://dx.doi.org/10.1027/1192-5604.22.1.67.
Повний текст джерелаДисертації з теми "Fiabilité RF"
Maris, Ferreira Pietro. "Méthodologie de conception AMS/RF pour la fiabilité : conception d'un frontal RF fiabilisé." Phd thesis, Télécom ParisTech, 2011. http://pastel.archives-ouvertes.fr/pastel-00628802.
Повний текст джерелаGares, Mohamed. "Etude de la fiabilité des transistors RF LDMOS de puissance en mode pulsé pour des applications hyperfréquences." Rouen, 2008. http://www.theses.fr/2008ROUES003.
Повний текст джерелаSince their early implementation, the length of pulses and the cyclic report/ratio did not cease increasing in order to increase the radar performances. These strong requirements of operation increased the quantity of pressure applied to the transistors, which constitue the modules of power in the radars and have a direct impact over their life times. A thorough knowledge of this impact is necesary for a better estimation of the reliability of modules and transistors, which make it up. It is for all these reasons that a study was committed to work out new investigation methods of the power RF components under RF pulses conditions for a radar application. A transistor RF LDMOS was retained for our first tests in accelerated ageing under various conditions (DC, RF, temperature and TOS). Electric characterizations (I-V, C-V and [S] parameters) were carried out. Thus, a complete examination of these critical electric parameters is exposed and analysed. All electric parameter drift after an accelerated ageing are studied and discussed. According to the analysis of these results, one notes that the lower the temperature is, the more important the drifts int the significant electric parameters. In order to understand the physical degradation phenomena inside the structure, we performed a 2-D physical simulation (Silvaco-Atlas). Finally, the degradation mechanism proposed for RF LDMOS is the interface states creation by the hot carriers (traps)
Duong, Quynh Huong. "Conception, caractérisation et modélisation : contribution à la fiabilité de micro-commutateurs RF MEMS." Lille 1, 2007. http://www.theses.fr/2007LIL10166.
Повний текст джерелаMardivirin, David. "Etude des mécanismes mis en jeu dans la fiabilité des micro-commutateurs MEMS-RF." Limoges, 2010. https://aurore.unilim.fr/theses/nxfile/default/e321f18e-23a9-4448-99a0-73476cf2cc9d/blobholder:0/2010LIMO4054.pdf.
Повний текст джерелаThe work presented in this manuscript focus on the characterization and analysis of failure mechanisms that appear in a new family of microwave components and RF MEMS (RadioFrequency Micro-Electro-Mechanical Systems). If these components have quickly attracted a lot of hopes to solve a large number of locks on new communication architectures, it appeared that the reliability of these components has greatly slowed their industrial development. Moreover, these micro-switches result from a multi-physics coupling which added a high complexity and difficulty of understanding how they work and thus their reliability. Currently, numerous and intense efforts are made by the scientific community (university and industry), as this issue was left open many questions and unresolved problems. This thesis aims to contribute on this area, both on experimental, theoretical and technological plans
Hai, Joycelyn. "fiabilité rf en technologie soi cmos : modélisation et application à un amplificateur de puissance." Electronic Thesis or Diss., Université Grenoble Alpes, 2024. http://www.theses.fr/2024GRALT033.
Повний текст джерелаThe development of SOI CMOS technology has greatly contributed to the rapid evolution of RF/mmW communication systems which play a critical role in the deployment of 5G networks. To meet the performance targets of 5G specifications, complex modulation schemes use high peak-to-average-power (PAPR) levels that are generated by the power amplifier (PA). The high-power levels, in turn, impact the device reliability due to the voltage handling limits of modern CMOS technology. At early design stages, accurate aging models can be leveraged to assess the trade-off between performance and reliability in consideration of the targeted RF mission profile. The two dominant CMOS reliability mechanisms found in RF PA mission profiles are hot-carrier injection (HCI) and off-state time-dependent dielectric breakdown (off-TDDB). The first part of this thesis aims to consolidate the HCI aging model using well-established RF/mmW aging methodology by performing model-to-hardware correlation (MHC) at accelerated DC and 28GHz RF stress conditions for different PA cell topologies. The MHC, validated for fresh and degraded PA device, is then used to perform a simulation-based sensitivity analysis to evaluate the impact of different model card parameters on the accuracy of RF HCI modeling. The results showed that both fresh and degradation model precision affects the RF degradation estimation, which highlights the significance of a degradation model described by physical effects of the device. The second part of this thesis focuses on the validity of RF modeling approach for off-state reliability (HCI degradation and TDDB). An integrated test structure generating off-state RF stress waveforms at DC, 500MHz and 1GHz to evaluate the frequency dependence in off-state reliability modeling has been designed. Time-power law parametric degradation has been observed in DC and RF (500MHz and 1GHz) off-state HCI stress measurements, suggesting the validity of quasi-static modeling approach for off-state HCI degradation. On the other hand, off-state RF TDDB characterization demonstrate increasing time-to-breakdown with increasing frequency, in particularly a gain factor of x2 at 1GHz compared to DC TDDB. This study was then extended to on and off-state RF HCI stress sequences revealing negligible interaction between the two degradation mechanisms, resulting in an additive degradation modeling approach. The last part of this thesis provides proof of concept to demonstrate aging compensation of a 28GHz RF PA. This is done by implementing the design of a negative feedback loop for on-chip adaptive body bias control in FDSOI technology which partially compensates the threshold voltage drift induced by RF HCI stress
Torres, Matabosch Nuria. "Design for reliability applied to RF-MEMS devices and circuits issued from different TRL environments." Toulouse 3, 2013. http://thesesups.ups-tlse.fr/1943/.
Повний текст джерелаThis thesis is intended to deal with reliability of RF-MEMS devices (switches, in particular) from a designer point of view using different fabrication process approaches. This means that the focus will be on how to eliminate or alleviate at the design stage the effects of the most relevant failure mechanisms in each case rather than studying the underlying physics of failure. The detection of the different failure mechanisms are investigated using the RF performance of the device and the developed equivalent circuits. This novel approach allows the end-user to infer the evolution of the device performance versus time going one step further in the Design for Reliability in RF-MEMS. The division of the fabrication process has been done using the Technology Readiness Level of the process. It assesses the maturity of the technology prior to incorporating it into a system or subsystem. An analysis of the different R&D approaches will be presented by highlighting the differences between the different levels in the TRL classification. This thesis pretend to show how reliability can be improved regarding the approach of the fabrication process starting from a very flexible one (LAAS-CNRS as example of low-TRL) passing through a component approach (CEA-Leti as example of medium-TRL) and finishing with a standard co-integrated CMOS-MEMS process (IHP example of high TRL)
Torres-Matabosch, Nuria. "Design pour la fiabilité applique aux composants et circuits RF-MEMS dans différents environnements TRL." Phd thesis, Université Paul Sabatier - Toulouse III, 2013. http://tel.archives-ouvertes.fr/tel-00797045.
Повний текст джерелаTsamados, Dimitrios. "Conception et caractérisation de microsystèmes électromécaniques : étude et fiabilité des capacités accordables des MEMS RF." Grenoble INPG, 2005. http://www.theses.fr/2005INPG0016.
Повний текст джерелаIn the last years radio-frequency micro-electromechanical systems (RF MEMS) have become very promising components for the improvement of the performances of highfrequency circuits. The possibility of integrating them with standard CMOS devices is a decisive advantage. On the other hand, the reliability of these RF MEMS components still constitutes a major drawback that frequently inhibits their industrialisation. In this thesis, a study of the operation of capacitive RF MEMS is carried out. We present the CMOS-compatible technology adopted for the fabrication and the reliability problems related to it. Specific characterisation tools for the reliability study are also presented. We propose an analytical modelling of the electromechanical behaviour of capacitif RF MEMS which is then compared to finite element 3D analysis. The electrical tests of the tuneable capacitors have revealed various reliability problems, like time-dependent electromechanical characteristics as well as their strong dependence on temperature. The role of the test environment and the resulting difficulties in the interpretation of the experimental data are also demonstrated
Lemoine, Emilien. "Quality and Reliability of RF-MEMS Switches for Space Applications." Thesis, Limoges, 2014. http://www.theses.fr/2014LIMO0062/document.
Повний текст джерелаThe thesis deals with reliability of tiny electro-mechanical components called MEMS. MEMS stands for Micro-Electro-Mechanical Systems. These components, designed for switching applications, are suitable candidates for telecommunications due to their low power consumption, Radio-Frequencies (RF) performances, compactness and lightness. A MEMS is fabricated using processes of integrated circuit manufacturing that makes its cost relatively low. Few of these components are commercially available and more are expected to be in the market as soon as reliability issues will be solved. Reliability issues studied in the thesis regard mechanical creep and acceleration factors. The mechanical creep occurs in our suspended structures whilst enduring a constant force, it results in deformation of structures and shift of parameters. Two innovative test benches are developed to assess mechanical creep in RF-MEMS switches. The acceleration factors are keys to conduct accelerated testings and predict lifetime of RF-MEMS switches. Parameters such as bias voltage, input-to-output voltage, temperature are varied to assess lifetime of switches and extract these acceleration factors
Fillit, Chrystelle. "Développement d’un banc de thermographie infrarouge pour l’analyse in-situ de la fiabilité des microsystèmes." Thesis, Saint-Etienne, EMSE, 2011. http://www.theses.fr/2011EMSE0600/document.
Повний текст джерелаOver the last few years, considerable effort has gone into the study of the failure mechanisms and reliability of MicroElectroMechanical Systems (MEMS). MEMS performance and reliability are affected by many parameters, such as the complex physical interactions between thermo-mechanical deformation, current flow, high power actuation and contact heating. In particular, temperature is a key issue for the design of a low loss and reliable MEMS. In order to improve device reliability it is essential to understand the thermal behaviours of RF-MEMS under standard or harsh current conditions. In this work, we present a new approach to investigate the failure mechanism of MEMS. An original set-up has been developed to localise and measure the heat loss of MEMS during actuation. Thermal characterization has been performed using infrared thermography to investigate the thermal sensitivity of MEMS. A brand new infrared bench was developed for temperature distribution measurement. An infrared camera, operating in the 1,5 - 5 µm bandwidth, was coupled to a new specific optic to reach an enhanced spatial resolution better than 2 µm/pixel. This work presents several results obtained on different advanced RF-MEMS including RF-MEMS switches where failure mechanism had been diagnosed
Книги з теми "Fiabilité RF"
Gares, Mohamed. La fiabilité des composants RF de puissance: Étude de la fiabilité des transistors RF LDMOS de puissance en mode pulsé pour des applications hyperfréquences. Omniscriptum, 2012.
Знайти повний текст джерелаТези доповідей конференцій з теми "Fiabilité RF"
Gares, Mohamed, Hichame Maanane, M. Belaid, Mohamed Masmoudi, Jerome Marcon, Karine Mourgues, Pierre Bertram, and Philippe Eudeline. "Impact de la Temperature sur la Fiabilite des Composants rf Ldmos de Puissance." In 2006 Canadian Conference on Electrical and Computer Engineering. IEEE, 2006. http://dx.doi.org/10.1109/ccece.2006.277631.
Повний текст джерела