Добірка наукової літератури з теми "FeSiB"

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Статті в журналах з теми "FeSiB"

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Czyż, Olaf, Jan Kusiński, Agnieszka Radziszewska, Zhongquan Liao, Ehrenfried Zschech, Małgorzata Kąc, and Roman Ostrowski. "Study of Structure and Properties of Fe-Based Amorphous Ribbons after Pulsed Laser Interference Heating." Journal of Materials Engineering and Performance 29, no. 10 (September 15, 2020): 6277–85. http://dx.doi.org/10.1007/s11665-020-05109-w.

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AbstractThe paper is devoted to the study of microstructural and magnetic properties of the Fe-based amorphous ribbons after interference pulsed laser heating. The ternary amorphous alloy FeSiB, as well as the multi-component alloys FeCuSiB and FeCuNbSiB, was subjected to laser pulses to induce crystallization in many microislands simultaneously. Structure and properties changes occurred in laser-heated dots. Detailed TEM analysis from a single dot shows the presence of FeSi(α) nanocrystals in the amorphous matrix. The FeSiB alloy is characterized after conventional crystallization by a dendritic structure; however, the alloys with copper as well copper and niobium additions are characterized by the formation of equiaxed crystals in the amorphous matrix. Amorphous alloys before and after the laser heating are soft magnetic; however, conventional crystallization leads to a deterioration of the soft magnetic properties of the material.
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Mao, Xin-Hui, Yong Zhou, Ji-An Chen, Jin-Qiang Yu, and Bing-Chu Cai. "Giant magnetoimpedance and stress-impedance effects in multilayered FeSiB/Cu/FeSiB films with a meander structure." Journal of Materials Research 18, no. 4 (April 2003): 868–71. http://dx.doi.org/10.1557/jmr.2003.0119.

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Giant magnetoimpedance (GMI) and giant stress-impedence (GSI) effects were realized in multilayered FeSiB/Cu/FeSiB films with a meander structure by magnetron sputtering on thin glass substrates. The GMI and GSI effects were studied in the frequency range of 1–40 MHz for the multilayered FeSiB/Cu/FeSiB films. Experimental results show that a large negative GMI ratio of –23% is obtained at Ha=12 kA/m for a frequency of 20 MHz. The GSI ratio is –20% for a frequency of 1 MHz with the deflection of 150μm of the multilayered FeSiBsCu/FeSiB films. The GSI effect is attractive for stress or pressure sensor applications.
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Zhou, Yong, Jinqiang Yu, Xiaolin Zhao, and Bingchu Cai. "Giant magnetoimpedance in layered FeSiB/Cu/FeSiB films." Journal of Applied Physics 89, no. 3 (2001): 1816. http://dx.doi.org/10.1063/1.1338514.

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Zhou, Yong, Wen Ding, Xin-Hui Mao, Ji-An Chen, Ya-Min Zhang, and Xiao-Yu Gao. "Stress-impedance effects in multilayered FeSiB/Cu/FeSiB films." Thin Solid Films 489, no. 1-2 (October 2005): 177–80. http://dx.doi.org/10.1016/j.tsf.2005.04.077.

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Chiriac, H., F. Barariu, and Gh Pop. "On the magnetic properties of amorphous FeSiB and FeSiBC wires." Journal of Magnetism and Magnetic Materials 133, no. 1-3 (May 1994): 325–28. http://dx.doi.org/10.1016/0304-8853(94)90558-4.

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Yong, Zhou, Yang Chun-Sheng, Yu Jin-Qiang, Zhao Xiao-Lin, and Mao Hai-Ping. "Giant Magneto-Impedance Effect in Sandwiched FeSiB/Cu/FeSiB Films." Chinese Physics Letters 17, no. 11 (November 1, 2000): 835–37. http://dx.doi.org/10.1088/0256-307x/17/11/020.

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Yong Zhou, Jinqiang Yu, Xiaolin Zhao, and Bingchu Cai. "Giant magneto-impedance effect in the sandwiched FeSiB/Cu/FeSiB films." IEEE Transactions on Magnetics 36, no. 5 (2000): 2960–62. http://dx.doi.org/10.1109/20.908641.

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Zhang, Xiang-Yun, Liang-Liang He, Jin-Ying Du, and Zi-Zhou Yuan. "Removal of Pb(II) from Water by FeSiB Amorphous Materials." Metals 12, no. 10 (October 17, 2022): 1740. http://dx.doi.org/10.3390/met12101740.

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Amorphous materials have shown great potential in removing azo dyes in wastewaters. In this study, the performance of FeSiB amorphous materials, including FeSiB amorphous ribbons (FeSiBAR), and FeSiB amorphous powders prepared by argon gas atomization (FeSiBAP) and ball-milling (FeSiBBP), in removing toxic Pb(II) from aqueous solution was compared with the widely used zero valent iron (ZVI) powders (FeCP). The results showed that the removal efficiency of all the amorphous materials in removing Pb(II) from aqueous solution are much better than FeCP. Pb(II) was removed from aqueous solution by amorphous materials through the combined effect of absorption, (co)precipitation and reduction. Furthermore, FeSiBAP and FeSiBBP have relatively higher removal efficiencies than FeSiBAR due to a high specific surface area. Although the FeSiBBP has the highest removal efficiency up to the first 20 min, the removal process then nearly stopped due to aggregation.
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Zhou, Yong, Xin-Hui Mao, Ji-An Chen, Wen Ding, Xiao-Yu Gao, and Zhi-Min Zhou. "Stress-impedance effects in layered FeSiB/Cu/FeSiB films with a meander line structure." Journal of Magnetism and Magnetic Materials 292 (April 2005): 255–59. http://dx.doi.org/10.1016/j.jmmm.2004.11.139.

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Labrador, Alberto, Cristina Gómez-Polo, José Ignacio Pérez-Landazábal, Vitalii Zablotskii, Iñigo Ederra, Ramón Gonzalo, Giovanni Badini-Confalonieri, and Manuel Vázquez. "Magnetotunable left-handed FeSiB ferromagnetic microwires." Optics Letters 35, no. 13 (June 21, 2010): 2161. http://dx.doi.org/10.1364/ol.35.002161.

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Дисертації з теми "FeSiB"

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Henninger, Georg [Verfasser]. "Die strukturellen und physikalischen Eigenschaften weichmagnetischer dünner Einzel- und Multilagenschichten des FeSiB-CuNb-Legierungssystems / Georg Henninger." Aachen : Shaker, 2003. http://d-nb.info/1172610908/34.

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Mattingley, Andrew David. "Sputter growth and characterisation of amorphous FeSiBC films." Thesis, University of Sheffield, 1997. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.268267.

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Hamrit, Oussama. "Etude des pertes magnétiques dans les matériaux magnétiques destinés aux applications de transport en haute fréquence et sous champ bidirectionnel." Thesis, Université Paris-Saclay (ComUE), 2015. http://www.theses.fr/2015SACLN003/document.

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Les pertes fer dans une machine électrique sont d'importance capitale, une estimation approximative de ces pertes peu mener à des solutions non viable sur le plan thermique, c'est dans ce contexte qu'il est indispensable d'avoir les caractéristiques les plus précises des matériaux magnétiques utilisés, de plus avec l'engouement récent pour les machines électriques haute vitesse (donc haute fréquence), il est important de caractériser les matériaux à haute fréquence. Dans les travaux de cette thèse, un système de mesure haute fréquence (1 T - 10 kHz) en champ unidirectionnel a été mis en place et des modèles de pertes magnétiques hautes fréquences ont été étudiés et discutés. Les champs magnétiques circulant dans une machine électrique sont de type alternatifs dans une direction donnée ou des champs elliptiques et tournants. C'est dans ce contexte qu'une caractérisation et un modèle en champ tournant ont été proposés. Enfin, dans le cas où le stator d'une machine électrique est découpé d'un seul tenant, la direction de découpe par rapport àla direction de laminage change d'un pas dentaire à un autre, pour cela une étude sur l'anisotropie des matériaux FeSi non orientés a été menée
Iron losses in electrical machine applications are of paramount importance, an approximate estimation of these losses can easily lead to a thermally unsustainable solution, in this context, it is essential to get exactly the magnetic characteristics of the magnetic materials used, moreover, with the recent interest for high speed electrical machines (high frequency), It is important to characterize magnetic materials at high frequency. In this work, a high frequency characterizing system (1 T - 10 kHz) under unidirectional field has been proposed and magnetic losses models has been studied and discussed. Magnetic fields in electrical machines could be alternative in one direction, elliptical or circular. In this context, a characterization under rotating field and a magnetic loss model has been proposed. Finally, when stator steel sheets are cut all in one piece, the cutting direction with regard to the rolling direction will change from one tooth pitch to another, for that a study of the FeSi non oriented anisotropy has been performed
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McKinty, Colin N. "Characterisation of beta-FeSi2 fabricated by ion beam assisted deposition." Thesis, University of Surrey, 2001. http://epubs.surrey.ac.uk/842704/.

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beta-FeSi2 has been shown to have a minimum direct band gap of 0.87 eV, which leads to the opportunity of Si based opto-electronics. One of the many applications that beta-FeSi2 has been linked with is solar cells. Its proposed suitability for solar cell applications originates from a large absorption coefficient above the fundamental edge (105 cm-1), predicted solar cell efficiencies as high as 23% and photoelectric properties with a quantum efficiency of 32%. Ion beam assisted deposition represent a technique that is suitable for producing low cost material over large areas, thus making it suitable for solar cell fabrication. The work reported here represents an in-depth optical characterisation of the effects of fabrication and post-fabrication processing on ion beam assisted deposited FeSi layers on Si substrates. Two different sets of substrates have been investigated; the first were deposited with layers of Fe and Si in the ratios between (40%:60%) and (29%:71%), and the second were deposited in stoichiometric ratios (1:2). A range of post-fabrication processes have been investigated, these have included studying the effects of annealing time (10 minutes to 18 hours) and temperature (100°C to 900°C) on the band gap and defects underneath the fundamental absorption edge. A study of the effect of annealing regime on the measurement temperature dependency of the band gap was also completed. The results have shown that annealing temperature has a stronger effect on the band gap rather than annealing time, while both affect the absorption underneath the fundamental edge. Optical evidence for the formation of beta-FeSi2 was found for annealing temperatures as low as 425°C. Increasing the annealing temperature/time also results in structural changes in the material, which are dependent on the as-deposited composition of the FeSi layer. beta-FeSi2/Si(n-type) solar cell devices have been fabricating, showing rectifying I-V characteristics, and a photo-voltage spectral response that indicated two distinct regions; 0.72 eV to 1.1 eV and 1.1 eV and above.
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Davies, Mark James. "The cytopathology of familial encephalopathy with neuroserpin inclusion bodies (FENIB)." Thesis, University of Cambridge, 2007. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.598334.

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Neuroserpin is a 55 kDa glycoprotein that is secreted from axons of the central and peripheral nervous system. Point mutations within the neuroserpin gene underlie the novel inclusion body dementia Familial Encephalopathy with the Neuroserpin Inclusion Bodies (FENIB).  These point mutations destabilise the molecule resulting in the formation of intracellular polymers by sequential insertion of the reactive centre loop of one molecule into β-sheet A of another. Here I postulate that endoplasmic reticulum (ER) inclusions of mutant serpins contribute to the molecular pathogenesis by directing a novel ER stress response. To assess this hypothesis I generated conditional PC-12 Tet-on cell lines expressing wild type neuroserpin, the Ser52Arg and Gly392Glu mutants that underlie FENIB and a novel-misfolding mutant (DeltaNS) predicted to stimulate the unfolded protein response (UPR). The mutants that cause FENIB accumulate within the ER as polymers that I can demonstrate by Western blot analysis and fluorescence confocal microscopy with novel monoclonal antibodies that detect the polymeric conformer of neuroserpin. Despite accumulating, the mutant neuroserpin does not elicit a UPR. However I demonstrate that the ER accumulation of mutant neuroserpin elicits an ER stress response resulting in activation of NF-κB, and this activation is calcium dependent.  Taken together, I have used the disease-related neuroserpin inclusions to define and characterise a novel ER derived signalling cascade involved in sensing protein accumulation within the ER.
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HUET, SARAH D. P. "Estudo de interações hiperfinas em nanopartículas de Fesub(3)Osub(4) e Fesub(3)Osub(4) dopadas com gadolínio pela espectroscopia de correlação angular perturbada." reponame:Repositório Institucional do IPEN, 2014. http://repositorio.ipen.br:8080/xmlui/handle/123456789/10616.

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Made available in DSpace on 2014-10-09T12:42:28Z (GMT). No. of bitstreams: 0
Made available in DSpace on 2014-10-09T14:01:49Z (GMT). No. of bitstreams: 0
Dissertação (Mestrado)
IPEN/D
Instituto de Pesquisas Energeticas e Nucleares - IPEN-CNEN/SP
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Gallo, Ivan Braga. "Estudo espectroscópico de filmes de SiFe." Universidade de São Paulo, 2010. http://www.teses.usp.br/teses/disponiveis/76/76132/tde-14072010-150129/.

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Na busca por novos materiais opto-eletrônicos, vários têm sido os compostos estudados. Dentre os mais interessantes destacam-se aqueles que apresentam compatibilidade com a atual indústria (micro-) eletrônica e/ou de tele-comunicações. Dentro deste contexto ocupam posição privilegiada compostos à base de silício e sob a forma de filmes finos de modo a possibilitar sua integração e aplicação em larga escala. Motivado por estes aspectos, o presente trabalho diz respeito à investigação de filmes finos do sistema Si+Fe com emissão na região do infravermelho. Assim sendo, filmes de silício amorfo hidrogenado (a-Si:H) e não-hidrogenado (a-Si), dopados com diferentes concentrações de Fe, foram depositados pela técnica de sputtering de rádio frequência. Após o processo de deposição, os filmes foram submetidos a tratamentos térmicos (em atmosfera de argônio) a 300, 450, 600, 750, e 900 oC por 15min (cumulativo), e a 800 oC por 2h (não-cumulativo). As amostras assim obtidas foram sistematicamente investigadas por intermédio de diferentes técnicas espectroscópicas: composicional (EDS - Energy Dispersive X-Ray Spectroscopy), de transmissão óptica na região do visível-infravermelho próximo (VIS-NIR), de espalhamento Raman, e de fotoluminescência (PL). As medidas de EDS revelaram que, em função das condições de preparo das amostras, a concentração de Fe no a-SiFe:H foi ~ 10 vezes menor que a presente nas amostras de a-SiFe. Os espectros de transmissão óptica indicaram variações no bandgap óptico associadas à concentração de Fe e à realização dos tratamentos térmicos. A partir das medidas de espalhamento Raman foi possível verificar que todos os filmes conforme depositados (AD- as deposited) e tratados até 600 oC por 15min possuem estrutura amorfa. Tratamentos térmicos a temperaturas maiores induzem a cristalização do silício e o aparecimento da fase β-FeSi2 que é opticamente ativa na região do infravermelho. Por fim, medidas de fotoluminescência mostraram que apenas as amostras tratadas a 800 oC por 2h (a-SiFe:H dopada com 0.08 at.% de Fe e a-SiFe dopada com 0.79 at.% de Fe) apresentam emissão na região do infravermelho (~ 1500 nm). Dentre as prováveis causas para a atividade óptica destas amostras devemos considerar o efeito combinado da concentração de Fe (e de cristalitos de β-FeSi2) e das suas características ópticas-estruturais.
Many compounds have been studied, in order to find new optoelectronic materials. Within the most interesting are those which show compatibility with the actual (micro)-electronic and/or telecommunications industry. In this context, silicon based compounds under thin films form have advantages to allow its integration and application on large scale. Motivated by these aspects, the present work reports the investigation of Si+Fe thin film system with emission in the infrared region. At this way, hydrogenated (a-Si:H) and hydrogen-free (a-Si) amorphous silicon films, doped with different iron concentrations, were deposited by the radio frequency sputtering technique. After the deposition process, the films were submitted to thermal annealing treatments (in an argon atmosphere) at 300, 450, 600, 750 and 900oC for 15min (cumulative), and at 800oC for 2h (not cumulative). The obtained samples were systematically investigated through different spectroscopic techniques: compositional (EDS Energy Dispersive X-Ray Spectroscopy), optical transmission in the visible-near infrared region (VIS NIR), Raman scattering and photoluminescence. The EDS measurements showed that, depending on the deposition conditions of the samples, the iron concentration in a-SiFe:H was ~ 10 times smaller than the present in the samples of a-SiFe. The optical transmission spectra indicated variations in the optical bandgap associated to Fe concentration and thermal annealing treatments. From Raman scattering measurements it was possible to verify that all films as deposited (AD) and annealed till 600oC for 15min have an amorphous structure. Thermal treatments at higher temperatures induce the silicon crystallization and the appearance of β-FeSi2 phase which is optically active in the infrared region. Finally, photoluminescence measurements showed that only the samples annealed at 800 ºC for 2h (a-SiFe:H doped with 0.08 at.% of Fe and a-SiFe doped with 0.79 at.% of Fe) have emission in the infrared region (~ 1500 nm). Among the probable reasons for the optic activity of these samples we have to take into account the combined effect of Fe concentration (and of β-FeSi2 crystallites) and its optic-structural characteristics.
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Ali, Mannan. "Growth and study of magnetostrictive FeSiBC thin films for device applications." Thesis, University of Sheffield, 1999. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.310759.

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Younsi, Abdelaziz. "Elaboration et étude de l'épitaxie de beta-FeSi2 sur Si(111)." Aix-Marseille 2, 1993. http://www.theses.fr/1993AIX22053.

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Cette etude comporte la croissance et les caracteristiques structurales et physico-chimiques des interfaces fe/si(111) dans l'optique de realiser l'epitaxie du disiliciure semiconducteur beta-fesi#2 sur substrat de silicium(111). Dans un premier volet, nous avons etudie la croissance du fer sur le silicium(111) a temperature ambiante et nous avons montre pour les faibles depots, qu'elle suit un mode de croissance de type couche par couche. L'interface est alors abrupte, un film de siliciure mince (inferieur a 4 a fe) dont la composition chimique est proche de celle de fesi#2 se forme alors au-dessus du substrat de silicium. Le recuit de ce systeme a revele suivant la temperature la formation de 2 phases distinctes: fesi et fesi#2. L'epitaxie de la phase beta-fesi#2 sur le si(111) apparait apres le recuit a 500-550c. Le depot du fer sur un substrat de si(111) porte a 500-540c conduit egalement a l'epitaxie de beta-fesi#2-si(111). Le decapage ionique associe a l'analyse auger a revele une homogeneite dans la composition chimique du film de fesi#2 sur toute son epaisseur. Les avantages et les limites des methodes de croissance sont discutes dans ce memoire
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Teichert, Steffen. "Elektrischer Transport und allgemeine Charakterisierung der halbleitenden Silicide Beta-FeSi2 und MnSi1,73." Doctoral thesis, Universitätsbibliothek Chemnitz, 1996. http://nbn-resolving.de/urn:nbn:de:bsz:ch1-199600235.

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Die elektrische Leitfähigkeit und der Hall-Effekt der halbleitenden Silicide Beta-FeSi2 und MnSi1,73 werden im Temperaturbereich zwischen 4,2 und 300 K untersucht. In ergänzenden Untersuchungen werden strukturelle und optische Eigenschaften dieser Materialien bestimmt. Die Ergebnisse der Messungen an MnSi1,73 - Schichten werden im Rahmen der Boltzmann-Gleichung in Relaxationszeitnäherung interpretiert. Die Temperatur- abhängigkeit der elektrischen Leitfähigkeit und der Hall-Beweglichkeit der Mangansilicid-Schichten kann unter Einbeziehung der Ladungsträgerstreuung an Korngrenzen und akustischen Phononen erklärt werden. In einer kritischen Diskussion werden die Grenzen des verwendeten Transportmodells aufgezeigt. Den Schwerpunkt der Untersuchungen an Beta-FeSi2 bildet die Analyse des Hall-Koeffizienten in Abhängigkeit von der Temperatur und dem Magnetfeld. Mit einem neuen dynamischen Meßverfahren werden umfassende Ergebnisse für den Hall-Koeffizienten in dünnen Schichten und Einkristallen erhalten, die eine herkömmliche Interpretation des Hall-Effekts in Beta-FeSi2 in Frage stellen. Unter Einbeziehung eines wesentlichen Einflusses des anomalen Hall-Effekts in die Interpretation, können die Eigenschaften des Hall-Effekts in Beta-FeSi2 verstanden werden.
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Книги з теми "FeSiB"

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İşverenin haklı nedenle fesih hakkı. Şişli, İstanbul: XII Levha, 2012.

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2

Kaplan, Emine Tuncay. İşverenin fesih hakkı: Sınırları, hüküm, ve sonuçları. Ankara: [s.n.], 1987.

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3

Ertabak, Ünal. I. İş güvencesinin kapsamı: Hukuk defteri sayı 3 ; II. Geçerli/geçersiz fesih sebepleri ve fesih usulü : hukuk defteri sayı 4 ; III. Geçersiz fesih itirazı ve sonuçları : hukuk defteri say' 5. Kadıköy, İstanbul: Legal, 2011.

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4

Anonim şirkette zorunlu organ eksikliğine dayanan fesih davası. Cağaloğlu, İstanbul: Beta, 2012.

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5

Karahacıoğlu, Ali Haydar. Kanunlarımızda müddetler: Zamanaşımı, hak düşürücü süreler, fesih, itiraz, ihbar vs. Ankara: A.H. Karahacıoğlu, 1992.

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6

Kabakci, Mahmut. Geçerli Fesih Nedeni Olarak Yetersiz İş Görme. Beta Yayinevi, 2013.

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7

Laroche. Sujets corriges mathematiques entrée ecoles ingegnieurs ts geipi fesic esie. Ellipses Marketing, 2002.

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8

Ltd, ICON Group, and Group International Inc ICON. FESIL ASA: International Competitive Benchmarks and Financial Gap Analysis (Financial Performance Series). 2nd ed. Icon Group International, 2001.

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Ltd, ICON Group, and ICON Group International Inc. FESIL ASA: Labor Productivity Benchmarks and International Gap Analysis (Labor Productivity Series). 2nd ed. Icon Group International, 2000.

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10

Haas. Sujets corriges physique concours entrée ecoles ingegnieurs fesic eni geipi efrei esiee terminale s. Ellipses Marketing, 2001.

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Частини книг з теми "FeSiB"

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Kaneko, T., and T. Kanomata. "5.4.30 FeSi." In Magnetic Properties of d-Elements, Alloys and Compounds Under Pressure, 459–60. Berlin, Heidelberg: Springer Berlin Heidelberg, 2014. http://dx.doi.org/10.1007/978-3-642-41834-1_256.

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Cho, H. J., E. K. Cho, Y. S. Song, S. K. Kwon, K. Y. Sohn, and Won Wook Park. "Magnetic Properties of Amorphous FeSiB and Nanocrystalline Fe73Si16B7Nb3Cu1 Soft Magnetic Sheets." In Progress in Powder Metallurgy, 1345–48. Stafa: Trans Tech Publications Ltd., 2007. http://dx.doi.org/10.4028/0-87849-419-7.1345.

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3

Shirane, G. "Magnetism of MnSi and FeSi." In Springer Proceedings in Physics, 157–61. Berlin, Heidelberg: Springer Berlin Heidelberg, 1987. http://dx.doi.org/10.1007/978-3-642-73107-5_31.

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4

Kerr, Dermot, Sonya Coleman, and Bryan Scotney. "FESID: Finite Element Scale Invariant Detector." In Image Analysis and Processing – ICIAP 2009, 72–81. Berlin, Heidelberg: Springer Berlin Heidelberg, 2009. http://dx.doi.org/10.1007/978-3-642-04146-4_10.

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5

Rodríguez, L. J., F. Ruette, E. V. Ludeña, G. R. Castro, and A. J. Hernández. "Theoretical Study of the Electronic Structure of FeSi." In Lectures on Surface Science, 140–43. Berlin, Heidelberg: Springer Berlin Heidelberg, 1987. http://dx.doi.org/10.1007/978-3-642-71723-9_25.

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6

Müller, E., K. Schackenberg, H. Ernst, E. de Groote, and W. A. Kaysser. "FeSi2 for Sensor Applications - Control of Functional Properties by Composition." In Functional Materials, 409–14. Weinheim, FRG: Wiley-VCH Verlag GmbH & Co. KGaA, 2006. http://dx.doi.org/10.1002/3527607420.ch68.

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7

Zhu, Zheng-qu, Yan-nan Dong, Jia-qi Liu, Jing Pang, Pu Wang, and Jia-quan Zhang. "Study on the Optimization of Fe Content of FeSiBC Amorphous Powders." In The Minerals, Metals & Materials Series, 64–74. Cham: Springer Nature Switzerland, 2023. http://dx.doi.org/10.1007/978-3-031-22524-6_8.

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8

Švantner, J., V. Frič, D. Matisová, and A. Sólyom. "Texture and Structure of Anisotropic FeSi Materials after Hot Rolling." In X-Ray and Neutron Structure Analysis in Materials Science, 143–45. Boston, MA: Springer US, 1989. http://dx.doi.org/10.1007/978-1-4613-0767-9_21.

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9

Søndergaard, Martin, Simon Johnsen, Peijie Sun, Ye Sun, Simone Cenedese, Carlo Gatti, Frank Steglich, and Bo Brummerstedt Iversen. "Strongly Correlated Intermetallics: $$\mathbf FeSb _\mathbf{2}$$ F eSb 2." In Thermoelectric Nanomaterials, 71–93. Berlin, Heidelberg: Springer Berlin Heidelberg, 2013. http://dx.doi.org/10.1007/978-3-642-37537-8_4.

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10

Morgenthal, I., R. Scholl, B. Wielage, S. Steinhäuser, G. Reisel, and T. Schnick. "Composite Powders Based on Metal Silicides FeSi2 and MoSi2 for Thermal Spraying." In Intermetallics and Superalloys, 181–87. Weinheim, FRG: Wiley-VCH Verlag GmbH & Co. KGaA, 2006. http://dx.doi.org/10.1002/3527607285.ch31.

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Тези доповідей конференцій з теми "FeSiB"

1

Zhou, Yong, Chunsheng Yang, Jinqiang Yu, Xiaolin Zhao, and Haiping Mao. "Giant magneto-impedance in sandwiched FeSiB/Cu/FeSiB films." In 4th International Conference on Thin Film Physics and Applications, edited by Junhao Chu, Pulin Liu, and Yong Chang. SPIE, 2000. http://dx.doi.org/10.1117/12.408309.

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2

Atalay, S., P. T. Squire, and M. R. J. Gibbs. "Pulse Annealing Of FeSiB Amorphous Wires." In 1993 Digests of International Magnetics Conference. IEEE, 1993. http://dx.doi.org/10.1109/intmag.1993.642072.

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3

Neagu, M., M. Dobromir, G. Popa, H. Chiriac, Gh Singurel, and C. Hison. "Surface magnetic characterisation of FeSiB amorphous ribbons." In INTERMAG Asia 2005: Digest of the IEEE International Magnetics Conference. IEEE, 2005. http://dx.doi.org/10.1109/intmag.2005.1463575.

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4

Kusinski, Jan, Małgorzata Kac, Olaf Czyz, Agnieszka Radziszewska, Tomasz Stobiecki, Roman Ostrowski, and Marek Strzelec. "Pulsed interference laser heating of amorphous FeSiB ribbons." In Thirteenth Symposium on Laser Technology, edited by Ryszard S. Romaniuk and Jan K. Jabczynski. SPIE, 2018. http://dx.doi.org/10.1117/12.2521182.

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5

Fang, Zhenglong, Keisuke Nagato, Naohiko Sugita, and Masayuki Nakao. "Grinding Performance and Delamination Analysis of FeSiB Metallic Glass Laminate." In JSME 2020 Conference on Leading Edge Manufacturing/Materials and Processing. American Society of Mechanical Engineers, 2020. http://dx.doi.org/10.1115/lemp2020-8520.

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Анотація:
Abstract FeSiB metallic glass laminate is a state-of-the-art structure for improving the magnetic performance of magnetic core. Extreme strength and hardness due to the amorphous matrix challenge its grinding process with severe tool wear and pronounced delamination. An amount of heat generated during grinding process brings a considerable problem in material crystallization, resulting in an increased magnetic deterioration. In this work, grinding data is presented for grind wheel wear, cutting force and surface quality when routing 8 mm thick FeSiB metallic glass laminate using electroplated CBN grinding points. Grinding experiments were carried out with grinding speeds of 0.5 and 1.5 m/s to investigate the formation of delamination. Energy dispersive x-ray spectroscopy (EDS) and electron back scattered diffraction pattern (EBSD) analyses were conducted to inspect the delamination between the metallic foil layers and detailed microstructure of machined surface, respectively. The relation between the cutting force and delamination was discussed associated with the identification of crystallization condition of machined surface. As a result, plastic deformation between the layers is the primary reason for the inter-laminate circuit short. Load-displacement curve from nano indenter indicated the strain hardening level near machined surface increased with cutting speed.
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6

Jiang, Da-guo, and Zhao-hui Liu. "Preparation and Piezomagnetic Effect of FeSiB Amorphous Powders /IIR Composite Film." In 2010 Third International Symposium on Intelligent Information Technology and Security Informatics (IITSI). IEEE, 2010. http://dx.doi.org/10.1109/iitsi.2010.152.

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7

FRANCO, V., C. F. CONDE, and A. CONDE. "MAGNETIC PROPERTIES AND STRUCTURAL EVOLUTION OF FeSiB-XNb (X=Pd, Pt) ALLOYS." In Proceedings of the Fifth International Workshop on Non-Crystalline Solids. WORLD SCIENTIFIC, 1998. http://dx.doi.org/10.1142/9789814447225_0041.

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8

Lu, Caijiang, Ping Li, Yumei Wen, and Aichao Yang. "Magnetoelectric effect in composite of ferromagnetic constant-elasticity alloy, piezoelectric ceramic and FeSiB ribbon." In 2011 IEEE Sensors. IEEE, 2011. http://dx.doi.org/10.1109/icsens.2011.6127236.

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9

BORREGO, J. M., C. F. CONDE, A. CONDE, and V. A. PEÑA RODRíGUEZ. "NANOCRYSTALLIZATION KINETICS STUDY OF A FeSiB-Cu(Nb,V) ALLOY BY USING DIFFERENT EXPERIMENTAL TECHNIQUES." In Proceedings of the Fifth International Workshop on Non-Crystalline Solids. WORLD SCIENTIFIC, 1998. http://dx.doi.org/10.1142/9789814447225_0042.

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10

Yu, Jinqiang, Aibin Yu, Yong Zhou, Bingchu Cai, and Xiaolin Zhao. "Effect of easy axis orientation and bias field on MI effect in FeSiB amorphous film." In 4th International Conference on Thin Film Physics and Applications, edited by Junhao Chu, Pulin Liu, and Yong Chang. SPIE, 2000. http://dx.doi.org/10.1117/12.408311.

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