Готові списки джерел за темами / Fan Out Wafer Level Packaging (FOWLP)

Зміст

Статті в журналах
Дисертації
Книги
Частини книг
Тези доповідей конференцій

Добірка наукової літератури з теми "Fan Out Wafer Level Packaging (FOWLP)"

Автор: Grafiati

Опубліковано: 15 березня 2025

Оформте джерело за APA, MLA, Chicago, Harvard та іншими стилями

Оберіть тип джерела:

Ознайомтеся зі списками актуальних статей, книг, дисертацій, тез та інших наукових джерел на тему "Fan Out Wafer Level Packaging (FOWLP)".

Біля кожної праці в переліку літератури доступна кнопка «Додати до бібліографії». Скористайтеся нею – і ми автоматично оформимо бібліографічне посилання на обрану працю в потрібному вам стилі цитування: APA, MLA, «Гарвард», «Чикаго», «Ванкувер» тощо.

Також ви можете завантажити повний текст наукової публікації у форматі «.pdf» та прочитати онлайн анотацію до роботи, якщо відповідні параметри наявні в метаданих.

Статті в журналах з теми "Fan Out Wafer Level Packaging (FOWLP)"

Palesko, Chet, and Amy Lujan. "Cost Comparison of Fan-out Wafer-Level Packaging to Fan-out Panel-Based Packaging." International Symposium on Microelectronics 2016, no. 1 (October 1, 2016): 000180–84. http://dx.doi.org/10.4071/isom-2016-wa32.

Повний текст джерела

Анотація:

Abstract Fan-out wafer-level packaging (FOWLP) offers many significant benefits over other packaging technologies. It is one of the smallest packaging options, but unlike fan-in wafer-level packaging, the IO count of FOWLP is not limited to the area of the die. Given these advantages, FOWLP continues to grow in popularity. While the cost of FOWLP is usually reasonable, there are still opportunities for future cost reduction. Many FOWLP suppliers are exploring panel-based manufacturing instead of the current wafer-based approach. Since many more packages can fit on a large panel than on a wafer, the cost per package can be reduced. The surface area of a 370mm × 470mm panel is 1,739 sq.cm. compared to 706 sq.cm. for a 300mm wafer. This means more than twice as many packages can be manufactured on a single panel. However, this does not mean that the cost per package will be cut in half. Many of the costly manufacturing activities do not depend on the surface area of the panel or wafer and they will not be affected by a larger panel. This paper analyzes the current cost of FOWLP activities and highlights which activities will benefit from a move to panels. An analysis of each manufacturing activity is presented comparing the cost impact of panel versus wafer. The total potential cost savings is also presented.

Стилі APA, Harvard, Vancouver, ISO та ін.

Li, Ming, Qingqian Li, John Lau, Nelson Fan, Eric Kuah, Wu Kai, Ken Cheung, et al. "Characterizations of Fan-out Wafer-Level Packaging." International Symposium on Microelectronics 2017, no. 1 (October 1, 2017): 000557–62. http://dx.doi.org/10.4071/isom-2017-tha31_057.

Повний текст джерела

Анотація:

Abstract The calling for smaller form factor, higher I/O density, higher performance and lower cost has made fan-out wafer level packaging (FOWLP) technology the trend. Good control of die position accuracy and molded wafer warpage are some of the keys to achieve high-yield production for FOWLP. In this study, 10mm×10mm test chips were fabricated and attached (chip-first and die face-up) onto 12 inch glass wafer carriers using die-attach-film (DAF). These reconfigured wafers were compression-molded with selected epoxy molding compounds (EMC). Cu bumps (contact-pads) were revealed by grinding, and redistribution layers (RDLs) were fabricated by lithography and electroplating process. The fan-out wafers were evaluated and characterized after each process step with main focus on the die-misplacement/die shift, re-configured wafer warpage, compression molding defects and RDL fabrication defects. The root causes of these defects were investigated and analyzed, while the possible solutions to overcome the defects were proposed and discussed.

Стилі APA, Harvard, Vancouver, ISO та ін.

Becker, Karl-Friedrich, Tanja Braun, S. Raatz, M. Minkus, V. Bader, J. Bauer, R. Aschenbrenner, et al. "On the Way from Fan-out Wafer to Fan-out Panel Level Packaging." International Symposium on Microelectronics 2016, S2 (October 1, 2016): S1—S23. http://dx.doi.org/10.4071/isom-2016-slide-4.

Повний текст джерела

Анотація:

Fan-out Wafer Level Packaging (FOWLP) is one of the latest packaging trends in microelectronics. The technology has a high potential in significant package miniaturization concerning package volume but also in thickness. Main advantages of FOWLP are the substrate-less package, lower thermal resistance, higher performance due to shorter interconnects together with direct IC connection by thin film metallization instead of wire bonds or flip chip bumps and lower parasitic effects. Especially the inductance of the FOWLP is much lower compared to FC-BGA packages. In addition the redistribution layer can also provide embedded passives (R, L, C) as well as antenna structures using a multi-layer structure. It can be used for multi-chip packages for System in Package (SiP) and heterogeneous integration. Manufacturing is currently done on wafer level up to 12″/300 mm and 330 mm respectively. For higher productivity and therewith lower costs larger form factors are forecasted for the near future. Instead of following the wafer level approach to 450 mm, panel level packaging will be the next big step. Sizes for the panel could range up to 18″×24″ or even larger influenced by different technologies coming from e.g. printed circuit board, solar or LCD manufacturing. However, an easy upscaling of technology when moving from wafer to panel level is not possible. Materials, equipment and processes have to be further developed or at least adapted. An overview of state of technology for panel level packaging will be presented and discussed in detailed.

Стилі APA, Harvard, Vancouver, ISO та ін.

Shelton, Doug. "Advanced Manufacturing Technology for Fan-Out Wafer Level Packaging." International Symposium on Microelectronics 2015, no. 1 (October 1, 2015): 000251–55. http://dx.doi.org/10.4071/isom-2015-wa34.

Повний текст джерела

Анотація:

Advanced process technology is required to develop and enable mass production of Fan-Out Wafer-Level Packaging (FOWLP) solutions for high-density 3D and 2.5D packaging. Canon has identified key challenges that must be solved for successful implementation of high-density integration technologies and has developed key technology for Canon Litho Systems to support the most challenging processes. In this paper, Canon will present process optimization results for high-resolution patterning of wafers across large topography as well as solutions that enable litho systems to compensate for FOWLP grid error due to die placement errors.

Стилі APA, Harvard, Vancouver, ISO та ін.

GOTO, Yoshio, Kosuke URUSHIHARA, Bunsuke TAKESHITA, and Ken-Ichiro MORI. "A study of Sub-micron Fan-out Wafer Level Packaging solutions." International Symposium on Microelectronics 2018, no. 1 (October 1, 2018): 000488–93. http://dx.doi.org/10.4071/2380-4505-2018.1.000488.

Повний текст джерела

Анотація:

Abstract In Fan-out Wafer Level Packaging (FOWLP) processes, redistribution layer (RDL) line width reduction is a key challenge to expand the FOWLP market to multi-chip interconnections, including interconnections between SoC and DRAM, split-die connection of FPGA, and interconnections between image sensors and SoC. Next generation FOWLP requires 1.0 μm RDL and future FOWLP is targeting 0.8 μm RDL. To meet these requirements, Canon has developed new projection optics with a high NA and wide-field that is best suited for sub-micron FOWLP. These projection optics are a new option for FPA-5520iV steppers, offering NA 0.24 imaging and a 52 × 34 mm exposure field. FPA-5520iV steppers with NA 0.24 provide excellent 0.8 μm resolution performance throughout all imaging fields thanks to Canon's wave-front aberration based projection optics manufacturing methods and on-axis optical tilt focus sensor.

Стилі APA, Harvard, Vancouver, ISO та ін.

Palesko, Chet, and Amy Lujan. "Cost Comparison of Fan-out Wafer-Level Packaging to Embedded Die Packaging." International Symposium on Microelectronics 2017, no. 1 (October 1, 2017): 000721–26. http://dx.doi.org/10.4071/isom-2017-thp32_050.

Повний текст джерела

Анотація:

Abstract Fan-out wafer-level packaging (FOWLP) and embedded die packaging offer similar advantages over traditional packaging technologies. For example, both packages can be quite thin since the die is placed early in the manufacturing process and the package is fabricated around the die. This is in contrast to traditional packaging technologies, in which the package is fabricated first, and then the die is placed on top of the package. This results in a thicker package compared to fabricating the package around the die. Due to the ongoing miniaturization market requirements, thinner packages are becoming increasingly important. Both FOWLP and embedded die packaging also provide the capability of placing multiple die and passives in a single package. This capability can have both size and performance benefits since the interconnect distance between the embedded components is shorter. In this paper, the cost and cost drivers of FOWLP and embedded die packaging technologies will be compared. Activity based modeling will be used to characterize the cost of each activity in the two manufacturing flows.

Стилі APA, Harvard, Vancouver, ISO та ін.

Ray, Urmi. "Chip Package Interaction Considerations in Fan-out Wafer Level Packaging." International Symposium on Microelectronics 2016, S2 (October 1, 2016): S1—S13. http://dx.doi.org/10.4071/isom-2016-slide-7.

Повний текст джерела

Анотація:

With the advent of thinner die/packages, new materials and more complex packages Chip Package Interaction has become a larger concern for the industry. Wafer Level Packages and variants such as Fan Out Wafer Level Packages (FOWLP) have an additional risk which we refer to as Chip Board Interaction. This talk will discuss some of the basics of the CPI and CBI risks to FOWLP which include both mechanical and electrical risks to products. These mechanisms span the Design, Process and Package domains and as such requires a collaborative efforts to manage the risks and trade-offs.

Стилі APA, Harvard, Vancouver, ISO та ін.

Braun, Tanja, Karl-Friedrich Becker, Ole Hoelck, Steve Voges, Ruben Kahle, Marc Dreissigacker, and Martin Schneider-Ramelow. "Fan-Out Wafer and Panel Level Packaging as Packaging Platform for Heterogeneous Integration." Micromachines 10, no. 5 (May 23, 2019): 342. http://dx.doi.org/10.3390/mi10050342.

Повний текст джерела

Анотація:

Fan-out wafer level packaging (FOWLP) is one of the latest packaging trends in microelectronics. Besides technology developments towards heterogeneous integration, including multiple die packaging, passive component integration in packages and redistribution layers or package-on-package approaches, larger substrate formats are also targeted. Manufacturing is currently done on a wafer level of up to 12”/300 mm and 330 mm respectively. For a higher productivity and, consequently, lower costs, larger form factors are introduced. Instead of following the wafer level roadmaps to 450 mm, panel level packaging (PLP) might be the next big step. Both technology approaches offer a lot of opportunities as high miniaturization and are well suited for heterogeneous integration. Hence, FOWLP and PLP are well suited for the packaging of a highly miniaturized energy harvester system consisting of a piezo-based harvester, a power management unit and a supercapacitor for energy storage. In this study, the FOWLP and PLP approaches have been chosen for an application-specific integrated circuit (ASIC) package development with integrated SMD (surface mount device) capacitors. The process developments and the successful overall proof of concept for the packaging approach have been done on a 200 mm wafer size. In a second step, the technology was scaled up to a 457 × 305 mm2 panel size using the same materials, equipment and process flow, demonstrating the low cost and large area capabilities of the approach.

Стилі APA, Harvard, Vancouver, ISO та ін.

Bluck, Terry, Chris Smith, and Paul Werbaneth. "Productivity Comparison of Wafer Transport Architectures in PVD Tools Used for Fan-Out Packaging RDL Barrier/Seed Formation." International Symposium on Microelectronics 2018, no. 1 (October 1, 2018): 000748–53. http://dx.doi.org/10.4071/2380-4505-2018.1.000748.

Повний текст джерела

Анотація:

Abstract Physical Vapor Deposition (PVD) systems are widely used in the semiconductor fabrication industry, both for front-end applications in the wafer fab and for back-end applications at device packaging houses. In fan-out wafer level packaging (FOWLP), and in fan-out panel level packaging (FOPLP), sputter deposited Ti and Cu are the base on which electroplated copper Redistribution Layers (RDLs) are built. For these RDL barrier/seed layers, PVD cluster tools, wafer transport architectures that have been widely used since the mid-1980s, are the current Process of Record (POR) in advanced packaging; however, these tools typically operate in a regime where wafer transport is robot-limited to approximately 50 wafers per hour, which limits overall throughput and greatly influences Cost of Ownership (COO) for the sputter deposition step(s), because the central handling robot occupied with a transfer from the Ti PVD module to the Cu PVD module, for example, has no opportunity to be doing anything other than that specific transfer. Other wafer transport architectures are more efficient from a wafer handling perspective. In linear transport carrier-based PVD tools, wafers or panels passing through the system benefit from a mechanical transfer time budget that is considerably less than for a cluster tool. Transport time overhead per wafer on linear transport systems is quite low, and scheduler software optimization becomes less onerous too, as a result of the simpler wafer transport architecture. We analyzed the relative throughput of cluster and linear transport PVD tools for a typical FOWLP barrier/seed layer (1000Å Ti / 2000Å Cu) sputter deposition process, and present details here of how the time spent moving wafers to various processing chambers affects overall system productivity. In the case of the cluster tool architecture, with its central wafer handling robot, wafer throughputs are approximately 50 wafers per hour, while on the linear transport system wafer throughputs as high as 240 wafers per hour are possible. The significant difference in system throughputs greatly affects the relative Cost of Ownership (COO) per wafer processed, with the linear transport system returning COO results that are less than half those of the typical cluster PVD tool.

Стилі APA, Harvard, Vancouver, ISO та ін.

Chen, Scott, Simon Wang, Coltrane Lee, Adren Hsieh, John Hunt, and William Chen. "Chip Last Fan Out as an Alternative to Chip First." International Symposium on Microelectronics 2015, no. 1 (October 1, 2015): 000245–50. http://dx.doi.org/10.4071/isom-2015-wa33.

Повний текст джерела

Анотація:

Smart phones & other portable devices have dominated Semiconductor growth, and drive IC packages smaller, lighter & thinner, and they continue to integrate more functions in that smaller volume. Besides SOC solutions driven by design houses or system companies, we have seen more packages of Quad Flat Non-lead (QFN), wafer level CSP (WLCSP), and system in package (SIP) being widely used in these smart phones & mobile devices.. Fan out WLCSP (FOWLP) has great potential to be the next new package for the smart phone mobility application. Two factors have driven fan out WLCSP (FOWLP) package technology in the last few years. The first is the advancing technology nodes which allow the shrinkage of die, allowing more die per wafer. However this comes at the cost of reduced package area for I/Os such as solder ball interconnects. The second and potentially more important factor relates to the demand of the market for more functions. Not all silicon functionality benefits from these advanced nodes, and merely adds to the cost of the die. This has driven the designers to partitioning of desired functionality into multiple die, which in turn requires effective interconnection of these separate die. The packaging technology that has evolved to solve these two situations has been Fan Out Wafer Level Packaging (FOWLP). Up to date FOWLP used chip first processing, in which the bare die was molded into a wafer shaped carrier with die pads exposed. Typically sputtering is used to provide interconnects to the die pad followed by patterned electroplating of redistribution lines (RDL) to “Fan Out” the next level interconnect pads to regions that can extend on to the molded material beyond the die perimeter. These processes require the use of relatively expensive semiconductor front end classes of equipment and are tailored to handle the reconstituted molded plastic wafers. We will describe a new alternative to chip first FOWLP, an alternative which meets the needs of a large percentage of the applications requiring a packaging technology such as FOWLP. This new package has been in production in ASE for over a year, and uses a “Chip Last” approach to the problem of increasing useable interconnect pad area. Die which have been bumped with Copper(Cu) Pillars are mass reflowed onto a low cost coreless substrate, followed by over molding which also serves as the die underfill. The Cu pillars allow direct connection to die pads at 50 μm pitch or below, negating the requirement for RDL formation on the die. The use of embedded traces allows for fine lines and spaces down to 15μm or less, and bonding directly on to the bare Copper. The Cu Pillars are bonded to one side of the Copper trace, and the solderballs or LGA pads are directly on the opposite side of the Copper. This makes the substrate to be effectively only as thick as the Copper used in the traces, and allows the final package to be as thin as 400μm. Since this uses existing high volume packaging infrastructures, more complex assemblies including multiple die, inclusion of passive components, and 3D structures can be easily implemented. We have designated this package structure “Fan Out Chip Last Package (FOCLP)” For higher end applications we will show the ability to use a high density substrate process for use in more demanding chip last fan out packages

Стилі APA, Harvard, Vancouver, ISO та ін.

Більше джерел

Дисертації з теми "Fan Out Wafer Level Packaging (FOWLP)"

Kakou, Luc Arnaud N'Doua. "Mesures et modélisations multi-physiques des dispositifs GaN pour la co-intégration SiP en technologie FOWLP." Electronic Thesis or Diss., Limoges, 2024. http://www.theses.fr/2024LIMO0123.

Повний текст джерела

Анотація:

Cette thèse, en lien avec le projet SMART3 du plan nano 2022, a pour but d’évaluer et de développer de nouvelles technologies de packaging 2D et 3D pour répondre à l’intégration hétérogène de différentes technologies de semi-conducteurs (GaN, AsGa, Si, …) afin de concevoir des systèmes entièrement intégrés appelés « System in Package ». La technologie utilisée est du type FO-WLP (Fan Out Wafer Level Packaging). Les défis d’intégration avec cette technologie nécessitent le plus souvent une approche multiphysique et un co-design circuits boitier pour permettre d’allier performances et fiabilité. Mon travail s’est focalisé sur les aspects thermiques et thermomécaniques de certains véhicules de test du projet et sur la comparaison avec des mesures thermiques et thermomécaniques. Les aspects multi-échelles ont également été abordés puisque nous avons par exemple effectué l’analyse thermique d’un dispositif en partant du transistor, en passant par le SiP et le SiP monté sur un PCB. D’un point de de vue thermomécanique, nous nous sommes intéressés au calcul de la déformation « warpage » dans les SiP. Nous avons comparé avec succès mesures et simulations sur le véhicule de test RIC 4X4
The aim of this thesis, which is linked to the SMART3 project of the nano 2022 plan, is to evaluate and develop new 2D and 3D packaging technologies to address the heterogeneous integration of different semiconductor technologies (GaN, GaAs, Si, ...) in order to design fully integrated systems known as ‘System in Package’. The technology used is FO-WLP (Fan Out Wafer Level Packaging). The challenges with this technology require a multiphysics approach and, very often, the co-design of the circuits with the package to combine performance and reliability. My work focused on the thermal and thermomechanical aspects of some test vehicles of the project and on their comparison with thermal and thermomechanical measurements. Multi-scale aspects were also addressed, as we carried out the thermal analysis of a device starting from the transistor, passing through the SiP and the SiP mounted on a PCB. From a thermomechanical point of view, we were interested in the calculation of warpage deformation in SiP. We have successfully compared measurement and simulation on the RIC 4x4 test vehicle

Стилі APA, Harvard, Vancouver, ISO та ін.

Lin, Hsueh Ju, and 林雪如. "A Methodology for Alleviating Die Shift of Fan-Out Wafer-Level Packaging (FOWLP)." Thesis, 2015. http://ndltd.ncl.edu.tw/handle/72905735841760367651.

Повний текст джерела

Анотація:

碩士
國立清華大學
資訊工程學系
103
Fan-out Wafer Level Packaging (FOWLP), which performs the packaging of dies while still being part of the wafer, has attracted a lot of attention for advanced electronic products in recent years. However, in FOWLP, there is a mechanical problem, the die shift problem which can cause a die to be shifted away from its original position on the carrier for FOWLP. The die shift problem can lead to the misalignment of contacts and therefore cause failure of dies. It has been shown by several researches that the majority of dies are shifted away from the center. Taking into account this shifting trend, in this paper, we propose an alleviation methodology integrating two novel approaches to alleviate the die shift problem. The experiments show that the die shift of 12- and 18-inch FOWLP can be alleviated and the yield will be highly improved.

Стилі APA, Harvard, Vancouver, ISO та ін.

Huang, Shih-Feng, and 黃世豐. "The Market Analysis and Future Development of Fan-Out Wafer Level Packaging (FOWLP) in Advanced Packaging Technology." Thesis, 2017. http://ndltd.ncl.edu.tw/handle/rf7484.

Повний текст джерела

Анотація:

碩士
輔仁大學
科技管理學程碩士在職專班
105
Semiconductor Industry has been developed in Taiwan for more than 40 years. It’s one of the major industries which makes Taiwan the second-largest semiconductor supplier in the world. Moreover, Taiwan IC packaging industry takes more than 50% market share all over the world. In 2016, TSMC launched the integrated Fan-Out process that break through the bottleneck in Moore’s Law and make the foundries moving into IC packaging field. The advantages of new fan-out technology are made by non-substrate process with smaller package. For smartphone applications, fan-out process is a better technology to replace flip-chip package. Thus, fan-out technology will impact the overall development of semiconductor industry. In this study, the development of fan-out wafer level package will be investigated. The research papers and marketing reports are collected to analyze to dig out the future market opportunity. The experts of IC packaging factory and sub-suppliers were also interviewed to illustrate the current marketing environment and future opportunities of fan-out process in the IC packaging industry in Taiwan.

Стилі APA, Harvard, Vancouver, ISO та ін.

HSU, HUI-LING, and 許惠玲. "The Study of Wafer Sort Control in Fan Out Wafer Level Package (FOWLP)." Thesis, 2016. http://ndltd.ncl.edu.tw/handle/19779089796225125965.

Повний текст джерела

Анотація:

碩士
國立高雄大學
電機工程學系--先進電子構裝技術產業研發碩士專班
104
This thesis aims the study of wafer sort control in fan out wafer level package (FOWLP). In this study a design of wafer prober and wafer probing operation to reduce the risk of wafer broken and wafer damage which caused by conditional wafer warpage in wafer sorting process. By using the design of experiment method and validate wafer handling acceptable working criteria of wafer prober, it is proved to improve mapping of wafer probing profile. The error modes due to wafer warpage in fan-out wafer level packaging can be resolved by the developed process flow and enhanced mechanism of wafer probing developed in this thesis. In addition, a method of regression analysis on wafer warpage is applied to improve the yield of wafer probing and processing die quantity.

Стилі APA, Harvard, Vancouver, ISO та ін.

Cheng-YingYang and 楊承穎. "Warpage and Die-shift Analyses for Fan-out Wafer Level Packaging." Thesis, 2018. http://ndltd.ncl.edu.tw/handle/a5rxn6.

Повний текст джерела

Анотація:

碩士
國立成功大學
機械工程學系
106
Wafer reconstitution is a vital process for serving as a buffer to decouple the processing developments between IC fabrication and electronics packaging. By this approach, the IC packaging is then independent from the chip processing. However, such a process brings numerous mechanical loadings during molding and curing phases. Without carefully planning, failures such as die-shifting and excessive wafer warpages are frequently reported and it induces problems for subsequent processing. In this work, it is desired to examine the key factor of die-shift and wafer warpage by performing finite element analyses, as well as essential parameters study. Preliminarily, the die-shift and warpage problems are deduced as interaction of fluid load, thermal expansion, shrinkage of molding compound and viscoelastic effect. To have a deeper insight, complete finite element analyses of the entire Recon procedure, from molding and thermal-related processes to inspection-related gravity effect, have been constructed to examine the involved phenomenon comprehensively. Compared with experiment, simulation of FE model has a consistent tendency with actual situation and is close to the observed defects. It is found that thermal-mechanical factors such as thermal expansion and residue stress have more influence on die-shift than mold flow effect. In addition, FE result shows that issue of unsymmetrical warpage is related to layout of dies and overall stiffness of reconstituted wafers. Furthermore, by parameters study based on FE models, key parameters with high sensitivity could be identified to optimize the Recon process. The proposed improving solutions are expected to reduce 20 to 30 percentage of initial die-shift and warpage for a better yield rate.

Стилі APA, Harvard, Vancouver, ISO та ін.

Jhong, Jia-Heng, and 鍾佳衡. "Die Shift Assessment During Compression Molding in Fan-out Wafer-Level Packaging Process." Thesis, 2018. http://ndltd.ncl.edu.tw/handle/67phv7.

Повний текст джерела

Анотація:

碩士
國立清華大學
動力機械工程學系
106
Due to the urgent need for miniaturization, multi-function, high performance and portability of electronic products, and the bottlenecks of lithography process technology, the advanced packaging technology is booming. The fan-out wafer level assembly has become one of the fastest growing semiconductor assembly technologies, which has the advantages of low cost, small size, high I/O count, excellent electrothermal performance and excellent multi-functional integration capability. However, there are still many problems to be solved, such as die shift, which will lead to poor alignment of the subsequent process, hence impacting the yield and subsequent process execution. The causes of die shift can be broadly divided into two categories: fluid flow effect and thermal-mechanical effect. The fluid flow effect is derived from the compression molding process at high temperature. The liquid molding compound flows to the periphery of the wafer and the dies are subjected to the drag force of the mold flow to cause the die shift. The thermal-mechanical effect is due to the thermal expansion and contraction of the packaging components during the processes, the curing shrinkage of the molding compound and the warpage due to the mismatch of the coefficient of thermal expansion between the packaging components, which causes the die shift. The main goal of this paper is to explore the die shift caused by fluid flow and thermo-mechanical effects, and to seek possible improvement. For the die shift generated by the fluid flow effect, the paper firstly conducted a Differential Scanning Calorimetry (DSC) experiment to find out the time- and temperature-dependent degree of cure of the molding compound, and constructed the cure kinetic characteristics with the mathematical model. The temperature- and cure-dependent viscosity is determined by combining the time- and temperature-dependent viscosity and the developed cure kinetics model. The mold flow analysis is conducted using Moldex3D® to calculate the flow drag force acting on the dies. Based on the calculated drag force, this paper then uses the finite element software ABAQUS® to calculate the die shift caused by the fluid flow effect. For the die shift caused by the thermal-mechanical effect, this thesis conducts dynamic mechanical analysis (DMA) and thermal-mechanical analysis (TMA) experiments to measure the temperature-dependent Young’s Modulus and coefficient of thermal expansion of the molding compound. The finite element software ANSYS® is used to calculate the die shift caused by the thermal-mechanical effect after the multi-stage process. Through the paper, the die shift caused by fluid and thermal-mechanical effects is analyzed. At the end of this paper, the analysis of each parameter is carried out. The results show that reducing the compression speed, the number of dies, the die pitch and thickness, or increasing the thickness and initial diameter of the molding compound, or using a carrier plate with a CTE similar to the molding compound at room temperature, or using a molding compound with high volume shrinkage, etc., can reduce the die shift. The results of this paper will provide a reference design direction for reducing the die shift of the fan-out wafer level packaging in compression molding process.

Стилі APA, Harvard, Vancouver, ISO та ін.

Chang, Tien-Ning, and 張天寧. "Reliability Assessment and Parametric Analysis of Fan-out Wafer-Level Packaging with Glass Substrate." Thesis, 2017. http://ndltd.ncl.edu.tw/handle/8xt4g9.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

Wu, Zong-Da, and 吳宗達. "Process-induced Warpage Analysis of Fan-out Wafer Level Packaging with Consideration of Effects of Viscoelastic Behavior Molding Compound." Thesis, 2018. http://ndltd.ncl.edu.tw/handle/9996kh.

Повний текст джерела

Анотація:

碩士
逢甲大學
航太與系統工程學系
106
To date, fan-out wafer level packaging (FOWLP) has been presently one of the rapidest-growing and even fastest-spreading advanced packaging technologies because of its many advantageous features, such as high IO density, low cost, carrier-less, thin profile, and compatibility with 2.5D/3D integration and system in packaging (SiP) for heterogeneous system integration, resulting in many potential applications, such as mobile devices, wireless communication, internet of things (IOT), healthcare, and automobile electronics. However, this technology still faces many critical challenges that need to be resolved before practical applications, including process yield. One of the root causes of low process yield is the process-induced warpage during the fabrication process, which tends to cause registration, alignment, line size control and handling problems in the subsequent fan-out fabrication operation, like redistribution layer (RDL). The thesis attempts to assess the evolution of the process-induced warpage of a chip-first FOWLP during fan-out processes and subsequent warpage-suppression processes, namely leveling and annealing. To achieve the goal, a process-dependent simulation methodology is proposed, which integrates three-dimensional (3D) finite element analysis (FEA) using ANSYS and element death and birth technique. The simulation takes into account the effects of gravity, geometry nonlinearity and viscoelastic constitutive behaviors of the liquid molding compound (LMC) material applied in the FOWLP. The viscoelastic constitutive model is constructed using a dynamic mechanical analysis (DMA) system in a frequency domain and a regression analysis in terms of Prony series coefficients, retardation time and time-temperature shift factors. The simulation results are compared against the on-line warpage measurement data. Finally, the influences of some key material and process parameters on the process-induced warpage are also discussed, including the coefficient of thermal expansion (CTE) of the molding compound, and the amount of volume shrinkage of the epoxy molding compound (EMC).

Стилі APA, Harvard, Vancouver, ISO та ін.

Peng, Sheng-Kai, and 彭昇楷. "A 28-GHz Low Noise Amplifier (LNA) Using Integrated Fan-Out (InFO) Wafer-Level Packaging Technology for 5th Generation Wireless System." Thesis, 2018. http://ndltd.ncl.edu.tw/handle/s3abva.

Повний текст джерела

Анотація:

碩士
國立交通大學
電信工程研究所
107
In this thesis, we proposed a radio frequency low-noise amplifier (LNA) implemented in Integrated Fan-Out (InFO) wafer-level packaging (WLP) technology. The high quality factor passive components and active devices (TSMC 28nm CMOS) in the LNA are fabricated using redistribution layer (RDL). In view of the demand for high-speed transmission of 5G mobile communication, we designed this single-stage amplifier at 28 GHz which is targeted to be 5G mobile communication spectrum. The input and output of the LNA are designed with L-shaped matching networks. The circuit design method and the integrated fan-out wafer-level packaging process will be introduced separately. In the circuit design, we used the Advanced Design System (ADS) software for simulation. The input and output matching networks of LNA are tuned to the optimal noise matching points to achieve the best performance. Because the redistribution layer is consisted of single layer of metal, we chose meander-line inductors and interdigital capacitors for our input and output matching networks. The results are measured using NDL high-frequency measurement system. Several parameters including lowest noise level, optimum Gamma (Γopt) and Gain of TSMC 28 nm MOSFET are measured. The measurement results are further established into a S-parameter file for co-simulation with passive component layout which can simultaneously take into account of high-frequency transmission line and parasitic effects. For the technology, we used the new InFO process developed by NDL. In this case, the passive components occupying large area in integrated circuit can be realized in the RDL. It effectively reduces the size of the chip and improves the number of pins and thickness of traditional ball-grid array (BGA) packaging. In this thesis, we will introduce the principle of design and fabrication process in detail.

Стилі APA, Harvard, Vancouver, ISO та ін.

Ke, Yu-Ting, and 柯宇庭. "Design of a 5.2-GHz Low-Noise Amplifier (LNA) Using Integrated Fan-Out (InFO) Wafer-Level Packaging Technology for Wi-Fi System." Thesis, 2019. http://ndltd.ncl.edu.tw/handle/j5kx5j.

Повний текст джерела

Анотація:

碩士
國立交通大學
電信工程研究所
107
In this thesis, we proposed a 5.2-GHz low-noise amplifier (LNA) implemented in Integrated Fan-Out (InFO) wafer-level packaging (WLP) technology. We fabricated gate inductor on the redistribution layer (RDL), and then connected with a low noise amplifier (LNA) chip to realize an integrated RF front-end circuit. In the circuit design, we used the Advanced Design System ADS-2017 software for simulation. The first design step of LNA is tuning bias voltage to get minimum noise of circuit. Secondly, select the size of transistor according to the power limitation. Finally, add matching networks to fit the input and output ports impedance matching requirement. The chip is manufactured by Taiwan Semiconductor Manufacturing Company (TSMC) 180nm CMOS process through Taiwan Semiconductor Research Institute (TSRI). When it comes to passive component, because there is only single layer of RDL, we use CPW meander-line inductor to design the gate inductor. We measured the chip and then used the measurement data to establish a S-parameter file for co-simulation with passive component (gate inductor) layout which can simultaneously take into account of high-frequency transmission line effects and parasitic effects. For the technology, we use new InFO process developed by TSRI. In this case, the passive components occupying large area in integrated circuit can be realized on the RDL. It effectively reduces the size of chip and improves the number of pins and thickness of traditional ball-grid array (BGA) packaging. We also expected it can improve quality factor of passive component and reduce loss at the same time. In this thesis, we will introduce the principle of design and fabrication process in detail and show the measurement data in the end.

Стилі APA, Harvard, Vancouver, ISO та ін.

Книги з теми "Fan Out Wafer Level Packaging (FOWLP)"

Lau, John H. Fan-Out Wafer-Level Packaging. Singapore: Springer Singapore, 2018. http://dx.doi.org/10.1007/978-981-10-8884-1.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

Lau, John H. Fan-Out Wafer-Level Packaging. Springer, 2018.

Знайти повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

Lau, John H. Fan-Out Wafer-Level Packaging. Springer, 2018.

Знайти повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

Fan-Out Wafer-Level Packaging. Springer, 2018.

Знайти повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

Kroehnert, Steffen, and Beth Keser. Advances in Embedded and Fan-Out Wafer Level Packaging Technologies. Wiley & Sons, Incorporated, John, 2019.

Знайти повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

Kroehnert, Steffen, and Beth Keser. Advances in Embedded and Fan-Out Wafer Level Packaging Technologies. Wiley & Sons, Incorporated, John, 2019.

Знайти повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

Keser, Beth, and Steffen Kröhnert. Advances in Embedded and Fan-Out Wafer Level Packaging Technologies. Wiley & Sons, Limited, John, 2019.

Знайти повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

Keser, Beth, and Steffen Kröhnert. Advances in Embedded and Fan-Out Wafer Level Packaging Technologies. Wiley & Sons, Incorporated, John, 2019.

Знайти повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

Keser, Beth, and Steffen Kroehnert, eds. Advances in Embedded and Fan‐Out Wafer‐Level Packaging Technologies. Wiley, 2019. http://dx.doi.org/10.1002/9781119313991.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

Keser, Beth, and Steffen Kröhnert, eds. Embedded and Fan‐Out Wafer and Panel Level Packaging Technologies for Advanced Application Spaces. Wiley, 2021. http://dx.doi.org/10.1002/9781119793908.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

Частини книг з теми "Fan Out Wafer Level Packaging (FOWLP)"

Lau, John H. "FOWLP: PoP." In Fan-Out Wafer-Level Packaging, 207–16. Singapore: Springer Singapore, 2018. http://dx.doi.org/10.1007/978-981-10-8884-1_8.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

Lau, John H. "Flip Chip Technology Versus FOWLP." In Fan-Out Wafer-Level Packaging, 21–68. Singapore: Springer Singapore, 2018. http://dx.doi.org/10.1007/978-981-10-8884-1_2.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

Lau, John H. "3D IC Heterogeneous Integration by FOWLP." In Fan-Out Wafer-Level Packaging, 269–303. Singapore: Springer Singapore, 2018. http://dx.doi.org/10.1007/978-981-10-8884-1_11.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

Lau, John H. "FOWLP: Chip-Last or RDL-First." In Fan-Out Wafer-Level Packaging, 195–206. Singapore: Springer Singapore, 2018. http://dx.doi.org/10.1007/978-981-10-8884-1_7.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

Lau, John H. "Fan-in Wafer-Level Packaging Versus FOWLP." In Fan-Out Wafer-Level Packaging, 69–113. Singapore: Springer Singapore, 2018. http://dx.doi.org/10.1007/978-981-10-8884-1_3.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

Lau, John H. "FOWLP: Chip-First and Die Face-Down." In Fan-Out Wafer-Level Packaging, 127–43. Singapore: Springer Singapore, 2018. http://dx.doi.org/10.1007/978-981-10-8884-1_5.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

Lau, John H. "FOWLP: Chip-First and Die Face-Up." In Fan-Out Wafer-Level Packaging, 145–94. Singapore: Springer Singapore, 2018. http://dx.doi.org/10.1007/978-981-10-8884-1_6.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

Lau, John H. "Fan-Out Panel-Level Packaging (FOPLP)." In Fan-Out Wafer-Level Packaging, 217–30. Singapore: Springer Singapore, 2018. http://dx.doi.org/10.1007/978-981-10-8884-1_9.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

Lau, John H. "Embedded Chip Packaging." In Fan-Out Wafer-Level Packaging, 115–25. Singapore: Springer Singapore, 2018. http://dx.doi.org/10.1007/978-981-10-8884-1_4.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

Lau, John H. "Fan-Out Wafer/Panel-Level Packaging." In Semiconductor Advanced Packaging, 147–237. Singapore: Springer Singapore, 2021. http://dx.doi.org/10.1007/978-981-16-1376-0_4.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

Тези доповідей конференцій з теми "Fan Out Wafer Level Packaging (FOWLP)"

Chang, Yu-Jen, Cheng-Hsin Liu, Yi-Sheng Lin, Chen-Chao Wang, Nicky Liu, Bessy Chiu, and Allen Gu. "A Correlative Microscopic Workflow Powered by Artificial Intelligence to Accelerate Failure Analysis of Next-Generation Semiconductor Packages." In ISTFA 2024, 312–16. ASM International, 2024. http://dx.doi.org/10.31399/asm.cp.istfa2024p0312.

Повний текст джерела

Анотація:

Abstract Over the past decade, the semiconductor industry has increasingly focused on packaging innovations to improve device performance, power efficiency, and reduce manufacturing cost. The recent heterogeneous integration offers an attractive solution in advanced IC packaging because it enables the integration of diverse functional components, such as logic, memory, power modulator, sensor on a single package platform. However, the adoption of the emerging structures, materials and components in advanced packages has challenged the existing fault isolation and analysis techniques. One of the major challenges is the limited accessibility to defects because fault regions are often located deep within devices. Without high-accuracy positional information of a defect, physical cross-sectioning and FIB polishing may alter or destroy the evidence of root causes. A non-destructive microscopic approach is preferred to map defective sites and surrounding structures. However, this method is limited by spatial resolution, especially for analyzing novel submicron interconnects such as fine pitch microbumps, redistribution layers (RDLs), and hybrid bonds. In this paper, we report an AI powered correlative microscopic workflow, where non-destructive X-ray imaging, FIB polishing and high-resolution SEM analyzing techniques are combined to solve the accessibility problem. Because 3D X-ray imaging may take a larger fraction of the time span over the entire workflow, a deep-learning based reconstruction method was applied to accelerate data acquisition. Several next-generation packages, fan-out wafer-level package (FOWLP) and hybrid bonds with sub 10 µm pitch, were used as the test vehicles to demonstrate the workflow performance and efficiency.

Стилі APA, Harvard, Vancouver, ISO та ін.

Braun, T., M. Topper, K. F. Becker, M. Wilke, M. Huhn, U. Maass, I. Ndip, R. Aschenbrenner, and K. D. Lang. "Opportunities of Fan-out Wafer Level Packaging (FOWLP) for RF applications." In 2016 IEEE 16th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF). IEEE, 2016. http://dx.doi.org/10.1109/sirf.2016.7445461.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

Lim, Jacinta Aman, Yun-Mook Park, Edil De Vera, Byung-Cheol Kim, and Brett Dunlap. "600mm Fan-Out Panel Level Packaging (FOPLP) As A Scale Up Alternative to 300mm Fan-Out Wafer Level Packaging (FOWLP) with 6-Sided Die Protection." In 2021 IEEE 71st Electronic Components and Technology Conference (ECTC). IEEE, 2021. http://dx.doi.org/10.1109/ectc32696.2021.00174.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

Zhang, Xiaowu, Boon Long Lau, Yong Han, Haoran Chen, Ming Chinq Jong, Sharon Pei Siang Lim, Simon Siak Boon Lim, Xiaobai Wang, Yosephine Andriani, and Songlin Liu. "Addressing Warpage Issue and Reliability Challenge of Fan-out Wafer-Level Packaging (FOWLP)." In 2021 IEEE 71st Electronic Components and Technology Conference (ECTC). IEEE, 2021. http://dx.doi.org/10.1109/ectc32696.2021.00313.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

Le, Thi Huyen, Abhijeet Kanitkar, Marco Rossi, Ivan Ndip, Tanja Braun, Friedrich Mueller, Klaus Dieter Lang, et al. "Dual-Band 5G Antenna Array in Fan-Out Wafer-Level Packaging (FOWLP) Technology." In 2020 23rd International Microwave and Radar Conference (MIKON). IEEE, 2020. http://dx.doi.org/10.23919/mikon48703.2020.9253926.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

Chen, Zhaohui, Xiaowu Zhang, Sharon Pei Siang Lim, Simon Siak Boon Lim, Boon Long Lau, Yong Han, Ming Chinq Jong, Songlin Liu, Xiaobai Wang, and Yosephine Andriani. "Package Level Warpage Simulation of Fan-out Wafer Level Package (FOWLP) Considering Viscoelastic Material Properties." In 2018 IEEE 20th Electronics Packaging Technology Conference (EPTC). IEEE, 2018. http://dx.doi.org/10.1109/eptc.2018.8654264.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

Salahouelhadj, A., M. Gonzalez, A. Podpod, and E. Beyne. "Investigating moisture diffusion in Mold Compounds (MCs) for Fan-Out-Wafer-Level-Packaging (FOWLP)." In 2022 IEEE 72nd Electronic Components and Technology Conference (ECTC). IEEE, 2022. http://dx.doi.org/10.1109/ectc51906.2022.00268.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

Liu, Shuai-Lin, Nicholas Kao, Vito Lin, Ken Zhang, and Yu-Po Wang. "Study of Reliable Chip Last Process for Fan Out Wafer Level Package." In ASME 2023 International Technical Conference and Exhibition on Packaging and Integration of Electronic and Photonic Microsystems. American Society of Mechanical Engineers, 2023. http://dx.doi.org/10.1115/ipack2023-111450.

Повний текст джерела

Анотація:

Abstract Package on Package (PoP) is one of packing technology to implement in mobile application. PoP is a stacking technology to integrate two or more separated packages. Specifically for application processor or baseband die of smartphone and tablets, the design to stack AP/BB chip and memory package is adopted generally in iOS or Android phones. One of PoP structure, substrate base of high bandwidth PoP (HBW-PoP), is a mature packaging type and has accessed to market in recent years. Seeking to the alternative PoP technologies, the demand is to reduce package dimension to cram more chip functions and expand battery capacity by size as larger as possible. Fan out wafer level package (FOWLP) efficiently enable higher I/O counts for high performance edge computing by re-distribution organic layers (RDL). In addition, the more advanced silicon node, the higher cost design houses bear in packaging development. Therefore, this study is that we propose a fan out package on package (FO-PoP) with chip last process, which features have higher process yield, shorter cycle time benefits than chip first platform. Organic RDL can miniaturize package height by replacing substrate base PoP. The total height can reach less than 0.5mm and meet up the market trend in wearable and smartphone applications. Known-good-die (KGD) feature of chip last process extremely control RDL process yield to reduce AP dies loss and further improve overall packaging yield. Then, the in-parallel process between bottom RDL and die micro-bumping process can shorten cycle time for production efficiency. In this paper, test vehicle verification includes warpage in the criteria and reliability validation passed by packaging level reliability and board level reliability.

Стилі APA, Harvard, Vancouver, ISO та ін.

Chen, Zhaohui, Xiaowu Zhang, Sharon Pei Siang Lim, Simon Siak Boon Lim, Boon Long Lau, Yong Han, Ming Chinq Jong, Songlin Liu, Xiaobai Wang, and Yosephine Andriani. "Solder Joint Reliability Simulation of Fan-out Wafer Level Package (FOWLP) Considering Viscoelastic Material Properties." In 2018 IEEE 20th Electronics Packaging Technology Conference (EPTC). IEEE, 2018. http://dx.doi.org/10.1109/eptc.2018.8654355.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

Boon, Soh Siew, K. J. Chui, S. W. David Ho, S. A. Sek, Mingbin Yu, Prayudi Lianto, Yu Gu, Guan Huei See, and Marvin L. Bernt. "Evaluation on multiple layer PBO-based Cu RDL process for Fan-Out Wafer Level Packaging (FOWLP)." In 2016 IEEE 18th Electronics Packaging Technology Conference (EPTC). IEEE, 2016. http://dx.doi.org/10.1109/eptc.2016.7861563.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

Ми пропонуємо знижки на всі преміум-плани для авторів, чиї праці увійшли до тематичних добірок літератури. Зв'яжіться з нами, щоб отримати унікальний промокод!