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Автор: Grafiati

Опубліковано: 7 вересня 2023

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1

Yang, Jin-Peng, Hai-Tao Chen, and Gong-Bin Tang. "Modeling of thickness-dependent energy level alignment at organic and inorganic semiconductor interfaces." Journal of Applied Physics 131, no. 24 (June 28, 2022): 245501. http://dx.doi.org/10.1063/5.0096697.

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We identify a universality in the Fermi level change of Van der Waals interacting semiconductor interfaces. We show that the disappearing of quasi-Fermi level pinning at a certain thickness of semiconductor films for both intrinsic (undoped) and extrinsic (doped) semiconductors over a wide range of bulk systems including inorganic, organic, and even organic–inorganic hybridized semiconductors. The Fermi level ( EF) position located in the energy bandgap was dominated by not only the substrate work function (Φsub) but also the thickness of semiconductor films, in which the final EF shall be located at the position reflecting the thermal equilibrium of semiconductors themselves. Such universalities originate from the charge transfer between the substrate and semiconductor films after solving one-dimensional Poisson's equation. Our calculation resolves some of the conflicting results from experimental results determined by using ultraviolet photoelectron spectroscopy (UPS) and unifies the general rule on extracting EF positions in energy bandgaps from (i) inorganic semiconductors to organic semiconductors and (ii) intrinsic (undoped) to extrinsic (doped) semiconductors. Our findings shall provide a simple analytical scaling for obtaining the “quantitative energy diagram” in the real devices, thus paving the way for a fundamental understanding of interface physics and designing functional devices.

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2

Zeitler, U., and A. G. M. Jansen. "Extrinsic magnetoresistance in semiconductors." Physica B: Condensed Matter 204, no. 1-4 (January 1995): 90–94. http://dx.doi.org/10.1016/0921-4526(94)00247-s.

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3

Gösele, Ulrich M., and Teh Y. Tan. "Point Defects and Diffusion in Semiconductors." MRS Bulletin 16, no. 11 (November 1991): 42–46. http://dx.doi.org/10.1557/s0883769400055512.

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Анотація:

Semiconductor devices generally contain n- and p-doped regions. Doping is accomplished by incorporating certain impurity atoms that are substitutionally dissolved on lattice sites of the semiconductor crystal. In defect terminology, dopant atoms constitute extrinsic point defects. In this sense, the whole semiconductor industry is based on controlled introduction of specific point defects. This article addresses intrinsic point defects, ones that come from the native crystal. These defects govern the diffusion processes of dopants in semiconductors. Diffusion is the most basic process associated with the introduction of dopants into semiconductors. Since silicon and gallium arsenide are the most widely used semiconductors for microelectronic and optoelectronic device applications, this article will concentrate on these two materials and comment only briefly on other semiconductors.A main technological driving force for dealing with intrinsic point defects stems from the necessity to simulate dopant diffusion processes accurately. Intrinsic point defects also play a role in critical integrated circuit fabrication processes such as ion-implantation or surface oxidation. In these processes, as well as during crystal growth, intrinsic point defects may agglomerate and negatively impact the performance of electronic or photovoltaic devices. If properly controlled, point defects and their agglomerates may also be used to accomplish positive goals such as enhancing device performance or processing yield.

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4

Liboff, Richard L. "Quasiclassical mobility for extrinsic semiconductors." Journal of Physics and Chemistry of Solids 46, no. 11 (January 1985): 1327–30. http://dx.doi.org/10.1016/0022-3697(85)90134-9.

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5

Mazzeo, M. P., and L. Restuccia. "Thermodynamics of n-type extrinsic semiconductors." Energy 36, no. 7 (July 2011): 4577–84. http://dx.doi.org/10.1016/j.energy.2011.02.055.

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6

Katzengruber, B., M. Krupa, and P. Szmolyan. "Bifurcation of traveling waves in extrinsic semiconductors." Physica D: Nonlinear Phenomena 144, no. 1-2 (September 2000): 1–19. http://dx.doi.org/10.1016/s0167-2789(00)00030-0.

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7

Ridgway, M. C., C. J. Glover, G. de M. Azevedo, S. M. Kluth, K. M. Yu, and G. J. Foran. "Structure in amorphous semiconductors: Extrinsic and intrinsic." Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 238, no. 1-4 (August 2005): 294–301. http://dx.doi.org/10.1016/j.nimb.2005.06.066.

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8

Bordovskiĭ, G. A., R. A. Castro, and E. I. Terukov. "Extrinsic conduction in Ge28.5Pb15S56.5 and Ge27Pb17Se56 glassy semiconductors." Technical Physics Letters 32, no. 11 (November 2006): 913–15. http://dx.doi.org/10.1134/s1063785006110010.

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9

Kartheuser, E., J. Schmit, and R. Evrard. "Theory of extrinsic oscillatory photoconductivity in polar semiconductors." Journal of Applied Physics 63, no. 3 (February 1988): 784–88. http://dx.doi.org/10.1063/1.340070.

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10

Wu, Chhi-Chong, and Jensan Tsai. "Hall effect and magnetoresistance in extrinsic piezoelectric semiconductors." Journal of Low Temperature Physics 73, no. 1-2 (October 1988): 53–78. http://dx.doi.org/10.1007/bf00681743.

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11

Miao, Jialei, Xiaowei Zhang, Ye Tian, and Yuda Zhao. "Recent Progress in Contact Engineering of Field-Effect Transistor Based on Two-Dimensional Materials." Nanomaterials 12, no. 21 (October 31, 2022): 3845. http://dx.doi.org/10.3390/nano12213845.

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Анотація:

Two-dimensional (2D) semiconductors have been considered as promising candidates to fabricate ultimately scaled field-effect transistors (FETs), due to the atomically thin thickness and high carrier mobility. However, the performance of FETs based on 2D semiconductors has been limited by extrinsic factors, including high contact resistance, strong interfacial scattering, and unintentional doping. Among these challenges, contact resistance is a dominant issue, and important progress has been made in recent years. In this review, the Schottky–Mott model is introduced to show the ideal Schottky barrier, and we further discuss the contribution of the Fermi-level pinning effect to the high contact resistance in 2D semiconductor devices. In 2D FETs, Fermi-level pinning is attributed to the high-energy metal deposition process, which would damage the lattice of atomically thin 2D semiconductors and induce the pinning of the metal Fermi level. Then, two contact structures and the strategies to fabricate low-contact-resistance short-channel 2D FETs are introduced. Finally, our review provides practical guidelines for the realization of high-performance 2D-semiconductors-based FETs with low contact resistance and discusses the outlook of this field.

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12

Christen, Thomas. "Nonequilibrium Phase Transition and Current Filaments in Extrinsic Semiconductors." Zeitschrift für Naturforschung A 49, no. 9 (September 1, 1994): 851–55. http://dx.doi.org/10.1515/zna-1994-0906.

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Abstract A phenomenological model for charge transport in extrinsic semiconductors is presented. For shallow impurities, large saturated impact-ionization coefficient and sufficiently low lattice temperature, the current-field characteristic is S-shaped (SNDC) due to the interplay between impact ionization and scattering of carriers from acoustic phonons, ionized and neutral impurities. The present model provides and explanation of the experimentally observed disappearance of SNDC above a critical lattice temperature. In the region of negative differential conductivity where a current-controlled uniform state is unstable, current filaments are calculated numerically.

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13

Petukhov, B. V. "Threshold stresses for motion of dislocations in extrinsic semiconductors." Semiconductors 41, no. 6 (June 2007): 625–30. http://dx.doi.org/10.1134/s1063782607060024.

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14

Christen, Thomas. "The Velocity of Current Filaments in Weak Magnetic Fields." Zeitschrift für Naturforschung A 49, no. 9 (September 1, 1994): 847–50. http://dx.doi.org/10.1515/zna-1994-0905.

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Abstract In the presence of a perpendicular weak magnetic field, current filaments in semiconductors can obtain a transverse drift. In the framework of a collective-coordinate ansatz, an expression for the velocity of the filament is derived for a simple type of extrinsic semiconductors. It turns out that the motion is caused by the coupling of the non-uniform Hall angle to the translational Goldstone mode of the current filament.

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15

Cantalapiedra, Inma R., Luis L. Bonilla, Michael J. Bergmann, and Stephen W. Teitsworth. "Solitary-wave dynamics in extrinsic semiconductors under dc voltage bias." Physical Review B 48, no. 16 (October 15, 1993): 12278–81. http://dx.doi.org/10.1103/physrevb.48.12278.

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16

Kounavis, P. "Extrinsic photoresponse enhancement under additional intrinsic photoexcitation in organic semiconductors." Journal of Applied Physics 119, no. 24 (June 28, 2016): 245502. http://dx.doi.org/10.1063/1.4954795.

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17

Kornyushin, Yuri. "Introduction to low frequency local plasmons in bulk extrinsic semiconductors." Facta universitatis - series: Physics, Chemistry and Technology 2, no. 5 (2003): 253–58. http://dx.doi.org/10.2298/fupct0305253k.

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Анотація:

It is shown that restoring force acts on the electronic cloud of the outer electrons of a neutral or charged impurity atom when it is shifted relative to the inner charged core (or expanded). Because of this the dipole oscillations arise which influence considerably the dispersion law of the plasma oscillations in bulk extrinsic semiconductors. Assuming that only one transition of electron from the ground state to the first excited state is essential, the dispersion law is calculated. It is shown that the calculated dispersion law consists of two separate branches, one of them originates from the regular plasma oscillations of the free electrons of a conductivity band, and the other one stems from the local oscillations of the outer electrons bounded to the impurity atoms.

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18

Parisi, J., ,. J. Peinke, U. Rau, and W. Clauß. "Report: Nonequilibrium Phase Transitions of Impact Ionization Breakdown in Extrinsic Semiconductors." Zeitschrift für Naturforschung A 45, no. 8 (August 1, 1990): 1048–50. http://dx.doi.org/10.1515/zna-1990-0819.

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AbstractIn the study of semiconductor electronic breakdown we observe the self-generated formation of spatio-temporal dissipative structures, when a bias voltage is applied at liquid-helium temperature. The underlying nonlinear physics of impurity impact ionization reveals critical phase transition behavior by varying the temperature at constant voltage

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19

Sidorov, A. I. "Photoinduced lens dynamics near the optical confinement threshold in extrinsic semiconductors." Technical Physics Letters 29, no. 4 (April 2003): 300–301. http://dx.doi.org/10.1134/1.1573297.

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20

Bonilla, Luis L., and Stephen W. Teitsworth. "Theory of periodic and solitary space charge waves in extrinsic semiconductors." Physica D: Nonlinear Phenomena 50, no. 3 (July 1991): 545–59. http://dx.doi.org/10.1016/0167-2789(91)90014-z.

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21

Chisten, Thomas. "Complex Ginzburg-Landau equation for nonlinear travelling waves in extrinsic semiconductors." Zeitschrift f�r Physik B Condensed Matter 97, no. 3 (September 1995): 473–79. http://dx.doi.org/10.1007/bf01317231.

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22

Bonilla, Luis L., and Francisco J. Higuera. "The Onset and End of the Gunn Effect in Extrinsic Semiconductors." SIAM Journal on Applied Mathematics 55, no. 6 (December 1995): 1625–49. http://dx.doi.org/10.1137/s0036139991199456.

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23

Bonilla, L. L., I. R. Cantalapiedra, M. J. Bergmann, and S. W. Teitsworth. "Onset of current oscillations in extrinsic semiconductors under DC voltage bias." Semiconductor Science and Technology 9, no. 5S (May 1, 1994): 599–602. http://dx.doi.org/10.1088/0268-1242/9/5s/054.

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24

Gozzo, F., C. Coluzza, G. Margaritondo, and F. Flores. "Intrinsic and extrinsic charge neutrality levels in semiconductors: an Empirical approach." Solid State Communications 81, no. 7 (February 1992): 553–56. http://dx.doi.org/10.1016/0038-1098(92)90410-b.

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25

Ermolaev, A. M. "High-frequency conductivity of metals in degenerate semiconductors with extrinsic electron states." Soviet Physics Journal 30, no. 4 (April 1987): 274–77. http://dx.doi.org/10.1007/bf00914826.

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26

Wichert, Th. "Intrinsic and extrinsic defects in semiconductors studied by perturbed ?? angular correlation spectroscopy." Applied Physics A: Materials Science & Processing 61, no. 2 (July 1, 1995): 207–12. http://dx.doi.org/10.1007/s003390050192.

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27

Wichert, Th. "Intrinsic and extrinsic defects in semiconductors studied by perturbed ?? angular correlation spectroscopy." Applied Physics A Materials Science and Processing 61, no. 2 (August 1995): 207–12. http://dx.doi.org/10.1007/bf01538391.

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28

GRÜNEIS, FERDINAND. "1/f NOISE DUE TO ATOMIC DIFFUSION OF IMPURITY CENTERS IN SEMICONDUCTORS." Fluctuation and Noise Letters 01, no. 04 (December 2001): L197—L220. http://dx.doi.org/10.1142/s0219477501000433.

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Atomic diffusion of impurity centers is investigated as a possible origin of 1/f noise in semiconductors. Following the trace of an individual impurity center, the noise produced at a certain site is calculated; due to diffusion of centers this is an intermittent process. Besides generation-recombination (= g-r) noise, an excess noise is obtained which is attributed to diffusion of impurity centers. This excess noise exhibits 1/f noise and g-r burst noise. 1/f noise is attributed to the return time of a center to the origin; g-r burst noise is the noise produced by centers residing at a certain site. For a n-type strongly extrinsic semiconductor, the Hooge coefficient α of the present model is derived and impact of compensating acceptors or additional doping by shallow centers is investigated. Increasing the concentration of additional shallow centers α is decreased; an increase of concentration of compensating acceptors results in an increase of α. The temperature dependence of the Hooge coefficient α(T) is calculated and is compared with empirical findings.

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29

TSUKIOKA, MASAYUKI, YASUO TANOKURA, MASAZI SHIMAZU, SHINICHIRO KUROIWA, and SADAO TSUTSUMI. "ELECTRICAL CONDUCTING AND THERMOELECTRIC PROPERTIES OF Ba4Na2Nb10O30−Ba3NaLaNb10O30 SYSTEM." Modern Physics Letters B 04, no. 10 (May 20, 1990): 681–88. http://dx.doi.org/10.1142/s0217984990000854.

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Ceramic samples of BNN-BNLN ( Ba 4 Na 2 Nb 10 O 30− Ba 3 NaLaNb 10 O 30) system were prepared in flowing N 2 gas at about 1410°C, which has been confirmed to have continuous solid solutions over the whole range of BNN-BNLN system by X-ray diffraction measurement. Electrical resistivity and Seebeck coefficient measurements were carried out at temperatures from 77 K to 773 K and from 60 K to 200 K, respectively for the samples of different composition belonging to the BNN-BNLN system. These experiments revealed that all these materials were extrinsic semiconductors and change from p-type semiconductors to n-type during the process of rising temperature.

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30

Petukhov, B. V. "Effect of Dynamic Aging of Dislocations on the Deformation Behavior of Extrinsic Semiconductors." Solid State Phenomena 95-96 (September 2003): 459–64. http://dx.doi.org/10.4028/www.scientific.net/ssp.95-96.459.

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31

Konin, A. "The role of nonequilibrium charge in generation of the thermopower in extrinsic semiconductors." Semiconductors 45, no. 5 (May 2011): 593–98. http://dx.doi.org/10.1134/s1063782611050174.

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32

Petukhov, B. V. "Effect of dynamic aging of dislocations on the deformation behavior of extrinsic semiconductors." Semiconductors 36, no. 2 (February 2002): 121–25. http://dx.doi.org/10.1134/1.1453422.

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33

Bharuth-Ram, K., C. Ronning, and T. B. Doyle. "Magnetic nanocluster formation of Fe ions embedded in SiO2and Al2O3substrates." MRS Advances 3, no. 42-43 (2018): 2603–8. http://dx.doi.org/10.1557/adv.2018.419.

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ABSTRACTResearch focus in recent years on magnetic behaviour of transition metal (TM) ions embedded in semiconductors has shifted from intrinsic effects to extrinsic effects such as the formation of nanoclusters of the TM ions and the influence of the host matrix on their magnetic behaviour. Our studies, using conversion electron Mössbauer Spectroscopy and magnetization measurements, on SiO2and Al2O3substrates implanted with 4 at. % Fe, show ferromagnetic behaviour of α-Fe clusters in amorphous SiO2, but α-Fe2O3clusters displaying superparamagnetic relaxation in crystalline Al2O3.

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34

Lettieri, S. "Calculations of band-filling optical nonlinearities in extrinsic semiconductors beyond the low injection limit." Journal of Applied Physics 95, no. 10 (May 15, 2004): 5419–28. http://dx.doi.org/10.1063/1.1697634.

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35

Bonilla, Luis L. "Theory of solitary waves and spontaneous current instabilities in dc voltage biased extrinsic semiconductors." Physica D: Nonlinear Phenomena 55, no. 1-2 (February 1992): 182–96. http://dx.doi.org/10.1016/0167-2789(92)90196-t.

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36

Pastrňák, J. "Double source optical absorption and spectral photoconductivity measurements in the extrinsic region of semiconductors." Czechoslovak Journal of Physics 37, no. 8 (August 1987): 942–53. http://dx.doi.org/10.1007/bf01596993.

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37

Konin, A. "The influence of energy band bending on the photo-induced electromotive force in extrinsic semiconductors." Journal of Physics: Condensed Matter 20, no. 5 (January 18, 2008): 055225. http://dx.doi.org/10.1088/0953-8984/20/5/055225.

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38

Bonilla, Luis L., and JoséM Vega. "On the stability of wavefronts and solitary space charge waves in extrinsic semiconductors under current bias." Physics Letters A 156, no. 3-4 (June 1991): 179–82. http://dx.doi.org/10.1016/0375-9601(91)90933-y.

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39

Grüneis, Ferdinand. "An Intermittent Generation–Recombination Process as a Possible Origin of 1/f Fluctuations in Semiconductor Materials." Fluctuation and Noise Letters 16, no. 04 (November 21, 2017): 1750034. http://dx.doi.org/10.1142/s0219477517500341.

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Inspired by the phenomenon of fluorescence intermittency in quantum dots and other materials, we introduce small off-states (intermissions) which interrupt the generation and recombination (= [Formula: see text]–[Formula: see text]) process in a semiconductor material. If the remaining on-states are power-law distributed, we find an almost pure 1/[Formula: see text] spectrum. Besides well-known [Formula: see text]–[Formula: see text] noise, we obtain two 1/[Formula: see text] noise components which can be attributed to the intermittent generation and recombination process. These components can be given the form of Hooge's relation with a Hooge coefficient [Formula: see text] describing the contribution of the generation and recombination process, respectively. Herein, the coefficients [Formula: see text] and [Formula: see text] describe impact of intermissions which in general are different for the generation and recombination process. The impact of [Formula: see text]–[Formula: see text] noise on 1/[Formula: see text] noise is comprised in the coefficient [Formula: see text] for the generation and [Formula: see text] for the recombination process. These coefficients are specified for an intrinsic and a slightly extrinsic semiconductor as well as for a semiconductor with traps; for the latter, the temperature dependence of 1/[Formula: see text] noise is also investigated. 1/[Formula: see text] noise is shown to be inversely related to the number of neutral and ionized [Formula: see text]-atoms rather than to the number of conduction electrons as defined in Hooge's relation. As a possible origin of 1/[Formula: see text] noise in semiconductors, electron–phonon scattering is suggested.

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40

Hiraiwa, Atsushi, Satoshi Okubo, Masahiko Ogura, Yu Fu, and Hiroshi Kawarada. "Capacitance–voltage characterization of metal–insulator–semiconductor capacitors formed on wide-bandgap semiconductors with deep dopants such as diamond." Journal of Applied Physics 132, no. 12 (September 28, 2022): 125702. http://dx.doi.org/10.1063/5.0104016.

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As diamond possesses only deep dopants, certain conventional physics and characterization methods are not applicable to diamond devices, owing to the explicit or implicit assumption of shallow dopants. To resolve this limitation, the capacitance –voltage ( C–V) characteristics of metal–insulator–semiconductor (MIS) capacitors formed on a semiconductor substrate with deep and compensating dopants were successfully formulated. Based on these equations, methods for accurately estimating the MIS capacitor properties were developed and validated through their application in the analysis of an actual MIS capacitor formed on a boron-doped hydrogen-terminated diamond substrate. The high-frequency C–V characteristic of the capacitor exhibited a prominent dip specific to deep dopants. However, the dip depth was considerably shallower than theoretically expected. This C–V characteristic was accurately reproduced theoretically, assuming the presence of a surficial diamond layer that contains acceptors with an activation energy of 0.23 eV, which is less than the value 0.37 eV for boron, and has a thickness of the extrinsic Debye length (40 nm in this study) or larger. The insulator charge of the MIS capacitor was estimated as −4.6 × 1012 cm−2 in units of electronic charge, which is sufficiently large to induce two-dimensional hole gas. The interface-state density was 1.4 × 1012 cm−2 eV−1 for interface-state energies of 0.3–0.5 eV above the valence band maximum. Hence, the proposed methodology and the possible presence of the reduced activation energy layer will guide the development of diamond-based devices.

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41

Niefind, Falk, Andrew Winchester, and Sujitra Pookpanratana. "(Invited) Imaging and Measuring Electronic Materials." ECS Meeting Abstracts MA2022-02, no. 34 (October 9, 2022): 1253. http://dx.doi.org/10.1149/ma2022-02341253mtgabs.

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Photoemission (PES) has been an essential metrology in the field of materials physics for over 30 years. The electronic band structure of a solid is a fundamental property which defines how a material will be used and integrated into device form. Topographic features and defects can impact electronic structure, therefore influence extrinsic properties when integrated in device form. Developing metrology that is sensitive to electronic properties at these length scales is desired. Here, we apply lab-based photoemission electron microscopy (PEEM) to gain insight in key structure – function relationships. Controlling doping during growth of semiconductors is critical as it has impact on device engineering – whether to form components in logical circuits or regions for Ohmic contact formation. For some semiconductor nanowires (NW), the doping density is varied along the long axis of the NW and knowing where the transition and its strength between doping regimes is important for device engineers. Here, we have imaged GaN NW grown with n-doped and n++-doped regions of approximately 6 μm in length and 200 nm in diameter that have been dispersed on a silicon substrate. Using a deep ultraviolet photon source, we observe an inflected change in the contrast along the long axis of the NWs (about 2 μm from one end) which we attribute to the n-n++ interface. This inflection is about 100 nm wide, and provides insight into the space-charge region formed at this electronic interface. We will also present on expanding our lab-based PEEM capability with integration to a tunable laser-based deep UV system (80 MHz, 140 fs). This added capability will provide additional imaging sensitivity to polar semiconductors such as III-nitrides. We will present some initial results with this system currently being commissioned on device-grade GaN and β-Ga2O3.

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42

Bonilla, Luis L. "Small-signal analysis of spontaneous current instabilities in extrinsic semiconductors with trapping: Application to ultrapurep-type germanium." Physical Review B 45, no. 20 (May 15, 1992): 11642–54. http://dx.doi.org/10.1103/physrevb.45.11642.

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43

Pastrnak, J., F. Karel, and O. Petricek. "Optical absorption coefficient of semiconductors in the extrinsic region obtained by photoconductivity measurements: application to SI GaAs." Semiconductor Science and Technology 5, no. 8 (August 1, 1990): 867–70. http://dx.doi.org/10.1088/0268-1242/5/8/011.

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44

Tuckute, Simona, Sarunas Varnagiris, Marius Urbonavicius, Emilija Demikyte, Kristina Bockute, and Martynas Lelis. "Structure and Photocatalytic Activity of Copper and Carbon-Doped Metallic Zn Phase-Rich ZnO Oxide Films." Catalysts 12, no. 1 (January 6, 2022): 60. http://dx.doi.org/10.3390/catal12010060.

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ZnO is one of the most important industrial metal oxide semiconductors. However, in order to fully realise its potential, the electronic structure of ZnO has to be modified to better fit the needs of specific fields. Recent studies demonstrated that reactive magnetron sputtering under Zn-rich conditions promotes the formation of intrinsic ZnO defects and allows the deposition of metallic Zn phase-rich ZnO films. In photocatalytic efficiency tests these films were superior to traditional ZnO oxide, therefore, the purposeful formation of intrinsic ZnO defects, namely Zn interstitials and oxygen vacancies, can be considered as advantageous self-doping. Considering that such self-doped ZnO remains a semiconductor, the natural question is if it is possible to further improve its properties by adding extrinsic dopants. Accordingly, in the current study, the metallic Zn phase-rich ZnO oxide film formation process (reactive magnetron sputtering) was supplemented by simultaneous sputtering of copper or carbon. Effects of the selected dopants on the structure of self-doped ZnO were investigated by X-ray diffractometer, scanning electron microscope, X-ray photoelectron spectroscope and photoluminescence techniques. Meanwhile, its effect on photocatalytic activity was estimated by visible light activated bleaching of Methylene Blue. It was observed that both dopants modify the microstructure of the films, but only carbon has a positive effect on photocatalytic efficiency.

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45

Bonilla, Luis L., Francisco J. Higuera, and Stephanos Venakides. "The Gunn Effect: Instability of the Steady State and Stability of the Solitary Wave in Long Extrinsic Semiconductors." SIAM Journal on Applied Mathematics 54, no. 6 (December 1994): 1521–41. http://dx.doi.org/10.1137/s0036139992236554.

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46

Aya Baquero, H. "Didactic model of the diode with Finite Element Method." Journal of Physics: Conference Series 2307, no. 1 (September 1, 2022): 012031. http://dx.doi.org/10.1088/1742-6596/2307/1/012031.

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Abstract The union of two extrinsic semiconductors, one of them doped with donor impurities and the other with acceptor impurities, constitutes what is called the diode. In this paper we present a didactic model of diode, from which its electrical characteristics can be extracted, such as the structure of energy bands, the characteristic curve of current voltage, etc. To achieve this purpose the Finite Element Method (FEM) was used. In essence, the MEF is a method that allows numerically approximate the solution of partial differential equations. It is well known that, except in very particular cases, obtain analytical solutions of such equations is impossible, and the only possibility is to find approximate solutions. This model is implemented in the search for new strategies and methods of teaching concepts related to electronic devices, such as diodes, transistors, light-emitting diodes, quantum devices, etc.

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47

Tran, Tuan T., Jennifer Wong-Leung, Lachlan A. Smillie, Anders Hallén, Maria G. Grimaldi, and Jim S. Williams. "High hole mobility and non-localized states in amorphous germanium." APL Materials 11, no. 4 (April 1, 2023): 041115. http://dx.doi.org/10.1063/5.0146424.

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Covalent amorphous semiconductors, such as amorphous silicon (a-Si) and germanium (a-Ge), are commonly believed to have localized electronic states at the top of the valence band and the bottom of the conduction band. Electrical conductivity is thought to occur through the hopping mechanism via these localized states. The carrier mobility of these materials is usually very low, in the order of ∼10−3–10−2 cm2/Vs at room temperature. In this study, we show that pure high-density amorphous Ge has exceptionally high carrier mobility, in the order of ∼100 cm2/Vs, and a high hole concentration of ∼1018 cm−3. The temperature-dependent conductivity of the material is also very-well defined with two distinctive regions, extrinsic and intrinsic conductivity, as in crystalline Ge. These results provide direct evidence for a largely preserved band structure and non-localized states within the valence band in high-density amorphous Ge, as previously suggested by Tauc et al. from optical characterization alone.

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48

Zhou, Chongwu. "(Invited) Nanoelectronics Based on Assembled High-Density and High-Semiconducting-Purity Carbon Nanotube Films." ECS Meeting Abstracts MA2022-01, no. 9 (July 7, 2022): 751. http://dx.doi.org/10.1149/ma2022-019751mtgabs.

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Carbon nanotubes hold great promise for high-performance electronics but also face significant challenges in terms of assembly and integration. On one hand, aligned carbon nanotubes are proposed as an alternative to III-V semiconductor technologies in radio frequency (RF) applications because of their high linearity as amplifiers and compatibility with CMOS electronics. We will first report high-performance RF transistors with operation frequencies beyond 100 GHz. These devices are built upon high-density (~50 nanotubes / micron) and high semiconducting purity (> 99.99%) aligned single-wall carbon nanotube films assembled at wafer scale. With gate length ~110 nm and T-shaped gate to reduce the gate charging resistance, the devices showed an extrinsic cutoff frequency and maximum oscillation frequency of over 100 GHz. The performance surpasses the 90 GHz cutoff frequency of radio-frequency CMOS transistors with gate length of 100 nm and is close to the performance of GaAs technology. [1] On the other hand, Carbon nanotubes are ideal candidates for beyond-silicon nanoelectronics because of their high mobility and low-cost processing; however, n-type transistors based on assembled aligned nanotubes has not been reported yet. Fabrication of n-type behavior field effect transistors (FETs) based on assembled aligned CNT arrays is needed for advanced CNT electronics. We will report a scalable process to make n-type transistors based on assembled aligned CNT arrays. Air-stable and high-performance n-type CNT FETs are achieved with high yield by combining atomic layer deposition dielectric and Ti contacts with gold overcoating, which are stable in air and widely used for III-V semiconductors. We also systematically studied the contribution of metal contacts and atomic layer deposition passivation in determining the transistor polarity. [2] Based on these experimental results, we report the successful demonstration of complementary metal-oxide-semiconductor inverters with good performance, which paves the way to realizing the promising future of carbon nanotube nanoelectronics. [1] “Wafer-scalable, aligned carbon nanotube transistors operating at frequencies of over 100 GHz”, C. Rutherglen, A. A. Kane, P. F. Marsh, T. A. Cain, B. I. Hassan, M. R. AlShareef, C. Zhou and K. Galatsis, Nature Electronics, volume 2, pages 530–539, 2019. [2] “Air-Stable n-Type Transistors based on Assembled Aligned Carbon Nanotube Arrays and Their Application in CMOS Electronics”, Z. Li, K. R. Jinkins, D. Cui, M. Chen, Z. Zhao, M. S. Arnold and C. Zhou, Nano Res. (2021). https://doi.org/10.1007/s12274-021-3567-9.

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49

Kathavate, V. S., K. Eswar Prasad, Mangalampalli S. R. N. Kiran, and Yong Zhu. "Mechanical characterization of piezoelectric materials: A perspective on deformation behavior across different microstructural length scales." Journal of Applied Physics 132, no. 12 (September 28, 2022): 121103. http://dx.doi.org/10.1063/5.0099161.

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Piezoelectric materials (PEMs) find a wide spectrum of applications that include, but are not limited to, sensors, actuators, semiconductors, memory devices, and energy harvesting systems due to their outstanding electromechanical and polarization characteristics. Notably, these PEMs can be employed across several length scales (both intrinsic and extrinsic) ranging from mesoscale (bulk ceramics) to nanoscale (thin films) during their applications. Over the years, progress in probing individual electrical and mechanical properties of PEM has been notable. However, proportional review articles providing the mechanical characterization of PEM are relatively few. The present article aims to give a tutorial on the mechanical testing of PEMs, ranging from the conventional bulk deformation experiments to the most recent small-scale testing techniques from a materials science perspective. The advent of nanotechnology has led materials scientists to develop in situ testing techniques to probe the real-time electromechanical behavior of PEMs. Therefore, this article presents a systematic outlook on ex situ and in situ deformation experiments in mechanical and electromechanical environments, related mechanical behavior, and ferroelectric/elastic distortion during deformation. The first part provides significant insights into the multifunctionality of PEM and various contributing microstructural length scales, followed by a motivation to characterize the mechanical properties from the application's point of view. In the midst, the mechanical behavior of PEM and related mechanical characterization techniques (from mesoscale to nanoscale) are highlighted. The last part summarizes current challenges, future perspectives, and important observations.

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50

Perera, A. G. U., R. E. Sherriff, M. H. Francombe, and R. P. Devaty. "Far infrared photoelectric thresholds of extrinsic semiconductor photocathodes." Applied Physics Letters 60, no. 25 (June 22, 1992): 3168–70. http://dx.doi.org/10.1063/1.106731.

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