Добірка наукової літератури з теми "Extrinsic Semiconductors"
Оформте джерело за APA, MLA, Chicago, Harvard та іншими стилями
Ознайомтеся зі списками актуальних статей, книг, дисертацій, тез та інших наукових джерел на тему "Extrinsic Semiconductors".
Біля кожної праці в переліку літератури доступна кнопка «Додати до бібліографії». Скористайтеся нею – і ми автоматично оформимо бібліографічне посилання на обрану працю в потрібному вам стилі цитування: APA, MLA, «Гарвард», «Чикаго», «Ванкувер» тощо.
Також ви можете завантажити повний текст наукової публікації у форматі «.pdf» та прочитати онлайн анотацію до роботи, якщо відповідні параметри наявні в метаданих.
Статті в журналах з теми "Extrinsic Semiconductors"
Yang, Jin-Peng, Hai-Tao Chen, and Gong-Bin Tang. "Modeling of thickness-dependent energy level alignment at organic and inorganic semiconductor interfaces." Journal of Applied Physics 131, no. 24 (June 28, 2022): 245501. http://dx.doi.org/10.1063/5.0096697.
Повний текст джерелаZeitler, U., and A. G. M. Jansen. "Extrinsic magnetoresistance in semiconductors." Physica B: Condensed Matter 204, no. 1-4 (January 1995): 90–94. http://dx.doi.org/10.1016/0921-4526(94)00247-s.
Повний текст джерелаGösele, Ulrich M., and Teh Y. Tan. "Point Defects and Diffusion in Semiconductors." MRS Bulletin 16, no. 11 (November 1991): 42–46. http://dx.doi.org/10.1557/s0883769400055512.
Повний текст джерелаLiboff, Richard L. "Quasiclassical mobility for extrinsic semiconductors." Journal of Physics and Chemistry of Solids 46, no. 11 (January 1985): 1327–30. http://dx.doi.org/10.1016/0022-3697(85)90134-9.
Повний текст джерелаMazzeo, M. P., and L. Restuccia. "Thermodynamics of n-type extrinsic semiconductors." Energy 36, no. 7 (July 2011): 4577–84. http://dx.doi.org/10.1016/j.energy.2011.02.055.
Повний текст джерелаKatzengruber, B., M. Krupa, and P. Szmolyan. "Bifurcation of traveling waves in extrinsic semiconductors." Physica D: Nonlinear Phenomena 144, no. 1-2 (September 2000): 1–19. http://dx.doi.org/10.1016/s0167-2789(00)00030-0.
Повний текст джерелаRidgway, M. C., C. J. Glover, G. de M. Azevedo, S. M. Kluth, K. M. Yu, and G. J. Foran. "Structure in amorphous semiconductors: Extrinsic and intrinsic." Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 238, no. 1-4 (August 2005): 294–301. http://dx.doi.org/10.1016/j.nimb.2005.06.066.
Повний текст джерелаBordovskiĭ, G. A., R. A. Castro, and E. I. Terukov. "Extrinsic conduction in Ge28.5Pb15S56.5 and Ge27Pb17Se56 glassy semiconductors." Technical Physics Letters 32, no. 11 (November 2006): 913–15. http://dx.doi.org/10.1134/s1063785006110010.
Повний текст джерелаKartheuser, E., J. Schmit, and R. Evrard. "Theory of extrinsic oscillatory photoconductivity in polar semiconductors." Journal of Applied Physics 63, no. 3 (February 1988): 784–88. http://dx.doi.org/10.1063/1.340070.
Повний текст джерелаWu, Chhi-Chong, and Jensan Tsai. "Hall effect and magnetoresistance in extrinsic piezoelectric semiconductors." Journal of Low Temperature Physics 73, no. 1-2 (October 1988): 53–78. http://dx.doi.org/10.1007/bf00681743.
Повний текст джерелаДисертації з теми "Extrinsic Semiconductors"
Spina, Carla. "Zinc oxide semiconducting nanocrystals : scaffolds for intrinsic and extrinsic defects." Thesis, McGill University, 2009. http://digitool.Library.McGill.CA:80/R/?func=dbin-jump-full&object_id=115869.
Повний текст джерелаWu, Wen. "Modeling the extrinsic resistance and capacitance of planar and non-planar MOSFETs /." View abstract or full-text, 2007. http://library.ust.hk/cgi/db/thesis.pl?ECED%202007%20WUW.
Повний текст джерелаTang, Xinghai. "Intrinsic and extrinsic parameter fluctuation limits on gigascale integration (GSI)." Diss., Georgia Institute of Technology, 1999. http://hdl.handle.net/1853/13305.
Повний текст джерелаMICHELI, PAOLA R. de. "Analise termografica e espectrofotometrica do clareamento dental extrinseco utilizando laser de diodo e sistema de LED. Estudo in vitro." reponame:Repositório Institucional do IPEN, 2004. http://repositorio.ipen.br:8080/xmlui/handle/123456789/11197.
Повний текст джерелаMade available in DSpace on 2014-10-09T14:01:26Z (GMT). No. of bitstreams: 1 10196.pdf: 3238659 bytes, checksum: f29ba4edf822c7281b6254e30d189680 (MD5)
Dissertacao (Mestrado Profissionalizante em Lasers em Odontologia)
IPEN/D-MPLO
Instituto de Pesquisas Energeticas e Nucleares, IPEN/CNEN-SP; Faculdade de Odontologia, Universidade de Sao Paulo
Delacourt, Bruno. "Étude du dopage extrinsèque dans CdHgTe pour la réalisation de photodiodes infrarouges." Thesis, Université Grenoble Alpes (ComUE), 2017. http://www.theses.fr/2017GREAY110.
Повний текст джерелаInfrared photodiodes, which are based on narrow gap semiconductors, permit collection of carriers generated by photons impact but also by thermal agitation. This agitation create a parasitic dark current deteriorating device performance. In order to minimize this dark current, the key parameter to maximize is the minority carrier lifetime. In high operating temperature (HOT) context, it open the possibility to increase the operating temperature of photonic infrared detectors. For the mid-wave infrared window, the goal is to work at 150−180 K instead of 80−120 K currently. This would allow significant progress in terms of energy consumption, power and thus autonomy and reliability of the systems. The objective of this thesis is to experimentally determine the theoretical limits of the minority carrier lifetime in HgCdTe and in a III-V semiconductor. For this, a photoluminescence decay measurement bench as well as a data extraction method making possible to discriminate the recombination mechanisms from the evolution of the signal as a function of the level of carrier injection in the sample were developed. In parallel, a set of characterizations was carried out to assist the development of technologies addressing the HOT context
Davidová, Lenka. "Diagnostika polovodičových materiálů metodou EBIC." Master's thesis, Vysoké učení technické v Brně. Fakulta elektrotechniky a komunikačních technologií, 2017. http://www.nusl.cz/ntk/nusl-319289.
Повний текст джерелаКниги з теми "Extrinsic Semiconductors"
Solymar, L., D. Walsh, and R. R. A. Syms. Semiconductors. Oxford University Press, 2018. http://dx.doi.org/10.1093/oso/9780198829942.003.0008.
Повний текст джерелаBi, J. F., and K. L. Teo. Nanoscale Ge1−xMnxTe ferromagnetic semiconductors. Edited by A. V. Narlikar and Y. Y. Fu. Oxford University Press, 2017. http://dx.doi.org/10.1093/oxfordhb/9780199533053.013.17.
Повний текст джерелаЧастини книг з теми "Extrinsic Semiconductors"
Balkan, Naci, and Ayşe Erol. "Intrinsic and Extrinsic Semiconductors." In Graduate Texts in Physics, 37–78. Cham: Springer International Publishing, 2021. http://dx.doi.org/10.1007/978-3-319-44936-4_2.
Повний текст джерелаGurylev, Vitaly. "Extrinsic Defects in Nanostructured Semiconductors." In Nanostructured Photocatalyst via Defect Engineering, 319–48. Cham: Springer International Publishing, 2021. http://dx.doi.org/10.1007/978-3-030-81911-8_10.
Повний текст джерелаBergmann, Michael J., Stephen W. Teitsworth, and Luis L. Bonilla. "Nucleation of Space-Charge Waves in an Extrinsic Semiconductor with Nonuniform Impurity Profile." In Hot Carriers in Semiconductors, 505–7. Boston, MA: Springer US, 1996. http://dx.doi.org/10.1007/978-1-4613-0401-2_115.
Повний текст джерелаTeitsworth, S. W., M. J. Bergmann, and L. L. Bonilla. "Space Charge Instabilities and Nonlinear Waves in Extrinsic Semiconductors." In Nonlinear Dynamics and Pattern Formation in Semiconductors and Devices, 46–69. Berlin, Heidelberg: Springer Berlin Heidelberg, 1995. http://dx.doi.org/10.1007/978-3-642-79506-0_3.
Повний текст джерелаMerle, J. C., F. Meseguer, and M. Cardona. "Light Scattering in CuCl — Intrinsic and Extrinsic Effects." In Proceedings of the 17th International Conference on the Physics of Semiconductors, 1193–96. New York, NY: Springer New York, 1985. http://dx.doi.org/10.1007/978-1-4615-7682-2_270.
Повний текст джерелаRoth, A. P., R. Masut, D. Morris, and C. Lacelle. "Extrinsic Photoluminescence in Unintentionally and Magnesium Doped GaInAs/GaAs Strained Quantum Wells." In Properties of Impurity States in Superlattice Semiconductors, 271–83. Boston, MA: Springer US, 1988. http://dx.doi.org/10.1007/978-1-4684-5553-3_21.
Повний текст джерелаGermanova, K., V. Donchev, Ch Hardalov, and M. Saraydarov. "Extrinsic Surface Photovoltage Spectroscopy — An Alternative Approach To Deep Level Characterisation In Semiconductors." In Photovoltaic and Photoactive Materials — Properties, Technology and Applications, 317–20. Dordrecht: Springer Netherlands, 2002. http://dx.doi.org/10.1007/978-94-010-0632-3_30.
Повний текст джерелаWeik, Martin H. "extrinsic semiconductor." In Computer Science and Communications Dictionary, 561. Boston, MA: Springer US, 2000. http://dx.doi.org/10.1007/1-4020-0613-6_6700.
Повний текст джерелаArdouin, B., T. Zimmer, H. Mnif, P. Fouillat, D. Berger, and D. Céli. "Bipolar Transistor’s Intrinsic and Extrinsic Capacitance Determination." In Simulation of Semiconductor Processes and Devices 2001, 304–7. Vienna: Springer Vienna, 2001. http://dx.doi.org/10.1007/978-3-7091-6244-6_68.
Повний текст джерелаCristiano, F., B. Colombeau, C. Bonafos, J. Aussoleil, G. Ben Assayag, and A. Claverie. "Atomistic simulations of extrinsic defects evolution and transient enhanced diffusion in silicon." In Simulation of Semiconductor Processes and Devices 2001, 30–33. Vienna: Springer Vienna, 2001. http://dx.doi.org/10.1007/978-3-7091-6244-6_6.
Повний текст джерелаТези доповідей конференцій з теми "Extrinsic Semiconductors"
van der Pol, Tom, Matthew Dyson, Kunal Datta, Stefan Meskers, and René Janssen. "Photoluminescence of thin film semiconductors affected by extrinsic effects." In Physics, Simulation, and Photonic Engineering of Photovoltaic Devices XI, edited by Alexandre Freundlich, Karin Hinzer, and Stéphane Collin. SPIE, 2022. http://dx.doi.org/10.1117/12.2604832.
Повний текст джерелаvan der Wel, P. J., J. R. de Beer, R. J. M. van Boxtel, Y. Y. Hsieh, and Y. C. Wang. "Reliability Assessment of Extrinsic Defects in Sinx Metal-Insulator-Metal Capacitors." In 2006 Reliability of Compound Semiconductors Digest. IEEE, 2006. http://dx.doi.org/10.1109/rocs.2006.323402.
Повний текст джерелаMönch, Winfried. "Adsorbate-induced Surface States and Fermi-level Pinning at Semiconductor Surfaces." In Microphysics of Surfaces, Beams, and Adsorbates. Washington, D.C.: Optica Publishing Group, 1989. http://dx.doi.org/10.1364/msba.1989.tuc1.
Повний текст джерелаWhitman, Charles S. "Estimating effective dielectric thickness for capacitors with extrinsic defects by a statistical method." In 2007 ROCS Workshop[Reliability of Compound Semiconductors Digest]. IEEE, 2007. http://dx.doi.org/10.1109/rocs.2007.4391067.
Повний текст джерелаPodoleanu, A. Gh. "Optical Faraday extrinsic current sensor using semimagnetic semiconductors and one down-lead optical fibre." In 13th International Conference on Optical Fiber Sensors. SPIE, 1999. http://dx.doi.org/10.1117/12.2302039.
Повний текст джерелаSatou, Akira, Gen Tamamushi, Kenta Sugawara, Junki Mitsushio, Victor Ryzhii, and Taiichi Otsuji. "Extraction of intrinsic and extrinsic parameters of graphene field-effect transistor from its asymmetric I–V characteristic." In 2016 Compound Semiconductor Week (CSW) [Includes 28th International Conference on Indium Phosphide & Related Materials (IPRM) & 43rd International Symposium on Compound Semiconductors (ISCS)]. IEEE, 2016. http://dx.doi.org/10.1109/iciprm.2016.7528701.
Повний текст джерелаBuscemi, F., E. Piccinini, R. Brunetti, and M. Rudan. "Intrinsic and extrinsic stability of Ovonic-switching devices." In 2015 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD). IEEE, 2015. http://dx.doi.org/10.1109/sispad.2015.7292352.
Повний текст джерелаZaletaev, Nicolas B., and Vasily F. Kocherov. "Extrinsic semiconductor low-background infrared field-effect transistor of a new type." In SPIE's 1995 International Symposium on Optical Science, Engineering, and Instrumentation, edited by Marija Strojnik and Bjorn F. Andresen. SPIE, 1995. http://dx.doi.org/10.1117/12.221389.
Повний текст джерелаPerera, A. G. U. "IR detection at wavelengths up to 200 microns in extrinsic semiconductor devices." In 16th International Conference on Infrared and Millimeter Waves. SPIE, 1991. http://dx.doi.org/10.1117/12.2297947.
Повний текст джерелаDjenadi, R., G. Micolau, J. Postel-Pellerin, R. Laffont, J. L. Ogier, F. Lalande, and J. Melkonian. "Fast extraction of extrinsic cells in a NVM array after retention under gate stress." In 2011 International Semiconductor Device Research Symposium (ISDRS). IEEE, 2011. http://dx.doi.org/10.1109/isdrs.2011.6135222.
Повний текст джерела