Статті в журналах з теми "ESD physics"
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Jauhariyah, M. N. R., B. K. Prahani, K. Syahidi, U. A. Deta, N. A. Lestari, and E. Hariyono. "ESD for physics: how to infuse education for sustainable development (ESD) to the physics curricula?" Journal of Physics: Conference Series 1747, no. 1 (February 1, 2021): 012032. http://dx.doi.org/10.1088/1742-6596/1747/1/012032.
Повний текст джерелаKrabbenborg, Benno, Reinier Beltman, Philip Wolbert, and Ton Mouthaan. "Physics of electro-thermal effects in ESD protection devices." Journal of Electrostatics 28, no. 3 (September 1992): 285–99. http://dx.doi.org/10.1016/0304-3886(92)90077-7.
Повний текст джерелаAlvarez, D., M. J. Abou-Khalil, C. Russ, K. Chatty, R. Gauthier, D. Kontos, J. Li, C. Seguin, and R. Halbach. "Analysis of ESD failure mechanism in 65nm bulk CMOS ESD NMOSFETs with ESD implant." Microelectronics Reliability 46, no. 9-11 (September 2006): 1597–602. http://dx.doi.org/10.1016/j.microrel.2006.07.041.
Повний текст джерелаPaul, Milova, Christian Russ, B. Sampath Kumar, Harald Gossner, and Mayank Shrivastava. "Physics of Current Filamentation in ggNMOS Devices Under ESD Condition Revisited." IEEE Transactions on Electron Devices 65, no. 7 (July 2018): 2981–89. http://dx.doi.org/10.1109/ted.2018.2835831.
Повний текст джерелаSinha, Dheeraj Kumar, and Amitabh Chatterjee. "SPICE level implementation of physics of filamentation in ESD protection devices." Microelectronics Reliability 79 (December 2017): 239–47. http://dx.doi.org/10.1016/j.microrel.2017.05.022.
Повний текст джерелаXu, Ke, Xing Chen, and Zhenzhen Chen. "A Physics-based Transient Simulation and Modeling Method for Wide-frequency Electrical Overstress Including ESD." Applied Computational Electromagnetics Society 36, no. 5 (June 14, 2021): 505–12. http://dx.doi.org/10.47037/2020.aces.j.360503.
Повний текст джерелаLiu, Xiao Yu, Jiang Shao, Xing Hao Wang, and Feng Ming Lu. "Research Progress on Electrostatic Discharge Failure Models in Semiconductor Materials." Advanced Materials Research 548 (July 2012): 527–31. http://dx.doi.org/10.4028/www.scientific.net/amr.548.527.
Повний текст джерелаRushby, Nick. "Editorial: Recent references." Education and Self Development 17, no. 1 (March 31, 2022): 6–7. http://dx.doi.org/10.26907/esd.17.1.01.
Повний текст джерелаRushby, Nick. "Editorial: Recent references." Education and Self Development 17, no. 1 (March 31, 2022): 8–9. http://dx.doi.org/10.26907/esd.17.1.01r.
Повний текст джерелаStadler, Wolfgang, Tilo Brodbeck, Reinhold Gärtner, and Harald Gossner. "Do ESD fails in systems correlate with IC ESD robustness?" Microelectronics Reliability 49, no. 9-11 (September 2009): 1079–85. http://dx.doi.org/10.1016/j.microrel.2009.07.029.
Повний текст джерелаYang, Sen, and David J. Pommerenke. "Effect of Different Load Impedances on ESD Generators and ESD Generator SPICE Models." IEEE Transactions on Electromagnetic Compatibility 60, no. 6 (December 2018): 1726–33. http://dx.doi.org/10.1109/temc.2017.2785739.
Повний текст джерелаGołek, F. "ESD thresholds for KCl." physica status solidi (b) 239, no. 2 (October 2003): 336–39. http://dx.doi.org/10.1002/pssb.200301841.
Повний текст джерелаBerikkhanova, Aiman, Zhanar Ibraimova, and Magripa Ibrayeva. "Collaborative Learning Environment in the Professional Training of Future Teachers." Education and Self Development 17, no. 2 (June 30, 2022): 144–56. http://dx.doi.org/10.26907/esd.17.2.13.
Повний текст джерелаVashchenko, V. A., and P. Hopper. "Bipolar SCR ESD devices." Microelectronics Reliability 45, no. 3-4 (March 2005): 457–71. http://dx.doi.org/10.1016/j.microrel.2004.12.013.
Повний текст джерелаVerhaege, Koen. "Component level ESD testing." Microelectronics Reliability 38, no. 1 (February 1998): 115–28. http://dx.doi.org/10.1016/s0026-2714(97)00068-1.
Повний текст джерелаColvin, J. "ESD failure analysis methodology." Microelectronics Reliability 38, no. 11 (November 1998): 1705–14. http://dx.doi.org/10.1016/s0026-2714(98)00173-5.
Повний текст джерелаOhsawa, A., and N. Ichikawa. "ESD detection by transient earth voltage." Journal of Physics: Conference Series 418 (March 22, 2013): 012054. http://dx.doi.org/10.1088/1742-6596/418/1/012054.
Повний текст джерелаSmallwood, Jeremy. "ESD in industry - present and future." Journal of Physics: Conference Series 646 (October 26, 2015): 012018. http://dx.doi.org/10.1088/1742-6596/646/1/012018.
Повний текст джерелаGajewski, A. "Multichannel measurement of ESD." Journal of Electrostatics 67, no. 2-3 (May 2009): 271–74. http://dx.doi.org/10.1016/j.elstat.2009.02.006.
Повний текст джерелаRhoades, William T. "System ESD immunity design." Journal of Electrostatics 24, no. 2 (February 1990): 131–48. http://dx.doi.org/10.1016/0304-3886(90)90004-f.
Повний текст джерелаKitagawa, Mitsuhiko, Ken-ichi Matsushita, and Akio Nakagawa. "High-Voltage Emitter Short Diode (ESD)." Japanese Journal of Applied Physics 35, Part 1, No. 12A (December 15, 1996): 5998–6002. http://dx.doi.org/10.1143/jjap.35.5998.
Повний текст джерелаKer, Ming-Dou, Tung-Yang Chen, and Chung-Yu Wu. "Substrate-triggered ESD clamp devices for use in power-rail ESD clamp circuits." Solid-State Electronics 46, no. 5 (May 2002): 721–34. http://dx.doi.org/10.1016/s0038-1101(01)00317-3.
Повний текст джерелаWU, E., and XIAO-AN ZHANG. "DYNAMICS OF PAIRWISE ENTANGLEMENT IN THE THREE-QUBIT HEISENBERG XX SPIN CHAIN." International Journal of Quantum Information 07, no. 08 (December 2009): 1447–58. http://dx.doi.org/10.1142/s0219749909005985.
Повний текст джерелаVassilev, Vesselin, and Wolfgang Stadler. "Editorial ESD reliability special section." Microelectronics Reliability 49, no. 12 (December 2009): 1405–6. http://dx.doi.org/10.1016/j.microrel.2009.10.013.
Повний текст джерелаGieser, Horst A. "On-chip electrostatic discharge ESD." Microelectronics Reliability 43, no. 7 (July 2003): 985–86. http://dx.doi.org/10.1016/s0026-2714(03)00122-7.
Повний текст джерелаSUWANNATA, NATTAWOOT, and APIRAT SIRITARATIWAT. "ELECTROSTATIC DISCHARGE EFFECTS ON GMR RECORDING HEADS USING A WAVELET TRANSFORM APPROACH." International Journal of Modern Physics B 23, no. 17 (July 10, 2009): 3567–72. http://dx.doi.org/10.1142/s0217979209062980.
Повний текст джерелаGorlov, M. I., V. A. Emel?yanov, I. I. Rubtsevich, and D. Yu Smirnov. "Parts screening for ESD susceptibility." Russian Microelectronics 34, no. 1 (January 2005): 22–29. http://dx.doi.org/10.1007/s11180-005-0003-x.
Повний текст джерелаLiang, Z., H. Zhang, S. Wang, L. Zhang, C. Zhu, H. Jin, and C. Guo. "Comparative research of electrospark deposited Tungsten alloy coating in two kinds of gas." Digest Journal of Nanomaterials and Biostructures 16, no. 3 (July 2021): 793–800. http://dx.doi.org/10.15251/djnb.2021.163.793.
Повний текст джерелаSaragih, L., Riandi, and R. Solihat. "The implementation of ESD into Biology learning to equip students with ESD competencies of systemic thinking and problem-solving." Journal of Physics: Conference Series 1806, no. 1 (March 1, 2021): 012158. http://dx.doi.org/10.1088/1742-6596/1806/1/012158.
Повний текст джерелаZhou, Jianchi, Kaustav Ghosh, Shaojie Xiang, Xin Yan, Ahmad Hosseinbeig, Jongsung Lee, and David Pommerenke. "Characterization of ESD Risk for Wearable Devices." IEEE Transactions on Electromagnetic Compatibility 60, no. 5 (October 2018): 1313–21. http://dx.doi.org/10.1109/temc.2017.2780056.
Повний текст джерелаJiang, yibo, Hui Bi, Zhihao Xu, Wei Zhao, Yuanyuan Zhang, and Xiaolei Wang. "Polysilicon devices as a highly compatible ESD protection with modulable voltage and low capacitance." International Journal of Modern Physics B 35, no. 04 (February 2, 2021): 2150052. http://dx.doi.org/10.1142/s0217979221500521.
Повний текст джерелаChen, Shih-Hung, and Ming-Dou Ker. "Active ESD protection circuit design against charged-device-model ESD event in CMOS integrated circuits." Microelectronics Reliability 47, no. 9-11 (September 2007): 1502–5. http://dx.doi.org/10.1016/j.microrel.2007.07.095.
Повний текст джерелаKer, Ming-Dou, Bing-Jye Kuo, and Yuan-Wen Hsiao. "Optimization of broadband RF performance and ESD robustness by -model distributed ESD protection scheme." Journal of Electrostatics 64, no. 2 (February 2006): 80–87. http://dx.doi.org/10.1016/j.elstat.2005.03.086.
Повний текст джерелаLin, Changgui, Erik Kjellström, Renate Anna Irma Wilcke, and Deliang Chen. "Present and future European heat wave magnitudes: climatologies, trends, and their associated uncertainties in GCM-RCM model chains." Earth System Dynamics 13, no. 3 (August 25, 2022): 1197–214. http://dx.doi.org/10.5194/esd-13-1197-2022.
Повний текст джерелаJiang, Yibo, Hui Bi, and Hui Li. "Low trigger voltage bulk FinFET silicon controlled rectifier in nanotechnology." Modern Physics Letters B 32, no. 34n36 (December 30, 2018): 1840072. http://dx.doi.org/10.1142/s0217984918400729.
Повний текст джерелаHyvonen, Sami, Sopan Joshi, and Elyse Rosenbaum. "Comprehensive ESD protection for RF inputs." Microelectronics Reliability 45, no. 2 (February 2005): 245–54. http://dx.doi.org/10.1016/j.microrel.2004.05.012.
Повний текст джерелаWolf, Heinrich, Horst Gieser, Detlef Bonfert, and Markus Hauser. "ESD Susceptibility of Submicron Air Gaps." Microelectronics Reliability 46, no. 9-11 (September 2006): 1587–90. http://dx.doi.org/10.1016/j.microrel.2006.07.039.
Повний текст джерелаNotermans, Guido, Olivier Quittard, Anco Heringa, Željko Mrčarica, Fabrice Blanc, Hans van Zwol, Theo Smedes, Thomas Keller, and Peter de Jong. "ESD robust high-voltage active clamps." Microelectronics Reliability 49, no. 12 (December 2009): 1433–39. http://dx.doi.org/10.1016/j.microrel.2009.06.055.
Повний текст джерелаVassilev, Vesselin. "Advances in ESD protection for ICs." Microelectronics Reliability 53, no. 2 (February 2013): 183. http://dx.doi.org/10.1016/j.microrel.2013.01.002.
Повний текст джерелаJacob, P., and U. Thiemann. "New ESD challenges in RFID manufacturing." Microelectronics Reliability 76-77 (September 2017): 395–99. http://dx.doi.org/10.1016/j.microrel.2017.06.048.
Повний текст джерелаJiang, Lingli, Hang Fan, Ming Qiao, Bo Zhang, and Zhaoji Li. "ESD characterization of a 190V LIGBT SOI ESD power clamp structure for plasma display panel applications." Microelectronics Reliability 53, no. 5 (May 2013): 687–93. http://dx.doi.org/10.1016/j.microrel.2013.02.002.
Повний текст джерелаLiu, Wei, Xiao-ming Ren, Rui-zhen Xie, Lan Liu, Ke-xin Yu, Xiang-fei Ji, Wei Ren, and En-yi Chu. "Fabrication and performance of a nickel-chromium (NiCr) igniter integrated with TVS diode for ESD protection." AIP Advances 13, no. 3 (March 1, 2023): 035207. http://dx.doi.org/10.1063/5.0137883.
Повний текст джерелаJUTONG, NUTTACHAI, APIRAT SIRITARATIWAT, DUANGPORN SOMPONGSE, and PORNCHAI RAKPONGSIRI. "ELECTROSTATIC DISCHARGE EFFECT ON TMR RECORDING HEAD: A FLEX ON SUSPENSION CAPACITANCE APPROACH." International Journal of Modern Physics B 23, no. 17 (July 10, 2009): 3586–90. http://dx.doi.org/10.1142/s0217979209063018.
Повний текст джерелаZhu, Zhihua, Zhaonian Yang, Xiaomei Fan, Yingtao Zhang, Juin Jei Liou, and Wenbing Fan. "Optimization of Tunnel Field-Effect Transistor-Based ESD Protection Network." Crystals 11, no. 2 (January 28, 2021): 128. http://dx.doi.org/10.3390/cryst11020128.
Повний текст джерелаNikolenko, S. V., S. N. Khimukhin, and P. S. Gordienko. "Alumo Matrix Composite Materials for Electro Spark Deposition on Carbon Steel." Solid State Phenomena 316 (April 2021): 745–51. http://dx.doi.org/10.4028/www.scientific.net/ssp.316.745.
Повний текст джерелаKuznetsov, Vadim. "HBM, MM, and CBM ESD Ratings Correlation Hypothesis." IEEE Transactions on Electromagnetic Compatibility 60, no. 1 (February 2018): 107–14. http://dx.doi.org/10.1109/temc.2017.2700492.
Повний текст джерелаGao, Y., O. B. Malyshev, R. Valizadeh, J. Wang, A. Hannah, Y. C. Hu, J. Zhang, Q. Y. Sun, Q. Y. Si, and S. Wang. "Effect of the film thickness on electron stimulated desorption yield from Ti-Zr-V coating." Journal of Instrumentation 17, no. 08 (August 1, 2022): P08025. http://dx.doi.org/10.1088/1748-0221/17/08/p08025.
Повний текст джерелаSadiek, Gehad, Wiam Al-Dress, Salwa Shaglel, and Hala Elhag. "Asymptotic Entanglement Sudden Death in Two Atoms with Dipole–Dipole and Ising Interactions Coupled to a Radiation Field at Non-Zero Detuning." Entropy 23, no. 5 (May 18, 2021): 629. http://dx.doi.org/10.3390/e23050629.
Повний текст джерелаKer, Ming-Dou, and Tang-Kui Tseng. "Active Electrostatic Discharge (ESD) Device for On-Chip ESD Protection in Sub-Quarter-Micron Complementary Metal-Oxide Semiconductor (CMOS) Process." Japanese Journal of Applied Physics 43, no. 1A/B (December 19, 2003): L33—L35. http://dx.doi.org/10.1143/jjap.43.l33.
Повний текст джерелаVoldman, Steven H. "A review of latchup and electrostatic discharge (ESD) in BiCMOS RF silicon germanium technologies: Part I—ESD." Microelectronics Reliability 45, no. 2 (February 2005): 323–40. http://dx.doi.org/10.1016/j.microrel.2004.10.017.
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