Статті в журналах з теми "Esaki Tunneling"
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Wang, Peng-Fei, Thomas Nirschl, Doris Schmitt-Landsiedel, and Walter Hansch. "Simulation of the Esaki-tunneling FET." Solid-State Electronics 47, no. 7 (July 2003): 1187–92. http://dx.doi.org/10.1016/s0038-1101(03)00045-5.
Повний текст джерелаLee, Jun-Ho, Inchul Choi, Nae Bong Jeong, Minjeong Kim, Jaeho Yu, Sung Ho Jhang, and Hyun-Jong Chung. "Simulation of Figures of Merit for Barristor Based on Graphene/Insulator Junction." Nanomaterials 12, no. 17 (August 31, 2022): 3029. http://dx.doi.org/10.3390/nano12173029.
Повний текст джерелаPerraud, S., C. David, and Z. Z. Wang. "Nanomeasure of Esaki Negative Resistance on p-Type GaAs(110) Surfaces." Solid State Phenomena 121-123 (March 2007): 835–38. http://dx.doi.org/10.4028/www.scientific.net/ssp.121-123.835.
Повний текст джерелаHansch, W., C. Fink, J. Schulze, and I. Eisele. "A vertical MOS-gated Esaki tunneling transistor in silicon." Thin Solid Films 369, no. 1-2 (July 2000): 387–89. http://dx.doi.org/10.1016/s0040-6090(00)00896-8.
Повний текст джерелаBandara, K. M. S. V., and D. D. Coon. "Derivation and correction of the Tsu–Esaki tunneling current formula." Journal of Applied Physics 66, no. 2 (July 15, 1989): 693–96. http://dx.doi.org/10.1063/1.343539.
Повний текст джерелаTuomisto, Noora, Sebastiaan van Dijken, and Martti Puska. "Tsu-Esaki modeling of tunneling currents in ferroelectric tunnel junctions." Journal of Applied Physics 122, no. 23 (December 21, 2017): 234301. http://dx.doi.org/10.1063/1.5001823.
Повний текст джерелаBandara, K. M. S. V., and D. D. Coon. "Analytic techniques and corrections to the Tsu-Esaki tunneling current." Superlattices and Microstructures 4, no. 6 (January 1988): 697–700. http://dx.doi.org/10.1016/0749-6036(88)90197-8.
Повний текст джерелаWillatzen, Morten, and Zhong Lin Wang. "Contact Electrification by Quantum-Mechanical Tunneling." Research 2019 (August 4, 2019): 1–11. http://dx.doi.org/10.34133/2019/6528689.
Повний текст джерелаR. Celino, Daniel, Adelcio M de Souza, Caio Luiz Machado Pereira Plazas, Regiane Ragi, and Murilo A Romero. "Physics Based RTD Model Accounting for Space Charge and Phonon Scattering Effects." Journal of Integrated Circuits and Systems 17, no. 1 (April 30, 2022): 1–8. http://dx.doi.org/10.29292/jics.v17i1.545.
Повний текст джерелаBizindavyi, Jasper, Anne S. Verhulst, Quentin Smets, Devin Verreck, Bart Soree, and Guido Groeseneken. "Band-Tails Tunneling Resolving the Theory-Experiment Discrepancy in Esaki Diodes." IEEE Journal of the Electron Devices Society 6 (2018): 633–41. http://dx.doi.org/10.1109/jeds.2018.2834825.
Повний текст джерелаSchulman, J. N. "Extension of Tsu-Esaki model for effective mass effects in resonant tunneling." Applied Physics Letters 72, no. 22 (June 1998): 2829–31. http://dx.doi.org/10.1063/1.121471.
Повний текст джерелаPark, Jong Han, and Woo Young Choi. "Esaki-Tunneling-Assisted Tunnel Field-Effect Transistors for Sub-0.7-V Operation." Journal of Nanoscience and Nanotechnology 16, no. 10 (October 1, 2016): 10237–40. http://dx.doi.org/10.1166/jnn.2016.13134.
Повний текст джерелаSchenk, A., and S. Sant. "Tunneling between density-of-state tails: Theory and effect on Esaki diodes." Journal of Applied Physics 128, no. 1 (July 7, 2020): 014502. http://dx.doi.org/10.1063/5.0008709.
Повний текст джерелаPersson, Olof, James L. Webb, Kimberly A. Dick, Claes Thelander, Anders Mikkelsen, and Rainer Timm. "Scanning Tunneling Spectroscopy on InAs–GaSb Esaki Diode Nanowire Devices during Operation." Nano Letters 15, no. 6 (May 5, 2015): 3684–91. http://dx.doi.org/10.1021/acs.nanolett.5b00898.
Повний текст джерелаKASPER, E. "STRAINED SILICON GERMANIUM HETEROSTRUCTURES FOR DEVICE APPLICATIONS." International Journal of Modern Physics B 16, no. 28n29 (November 20, 2002): 4189–94. http://dx.doi.org/10.1142/s0217979202015054.
Повний текст джерелаEinwanger, A., M. Ciorga, U. Wurstbauer, D. Schuh, W. Wegscheider, and D. Weiss. "Tunneling anisotropic spin polarization in lateral (Ga,Mn)As/GaAs spin Esaki diode devices." Applied Physics Letters 95, no. 15 (October 12, 2009): 152101. http://dx.doi.org/10.1063/1.3247187.
Повний текст джерелаCiorga, M., A. Einwanger, J. Sadowski, W. Wegscheider, and D. Weiss. "Tunneling anisotropic magnetoresistance effect in a p+-(Ga,Mn)As/n+-GaAs Esaki diode." physica status solidi (a) 204, no. 1 (January 2007): 186–90. http://dx.doi.org/10.1002/pssa.200673002.
Повний текст джерелаEl Kazzi, S., A. Alireza, C. C. M. Bordallo, Q. Smets, L. Desplanque, X. Wallart, O. Richard, et al. "Influence of Doping and Tunneling Interface Stoichiometry on n+In0.5Ga0.5As/p+GaAs0.5Sb0.5 Esaki Diode Behavior." ECS Transactions 72, no. 3 (May 19, 2016): 73–80. http://dx.doi.org/10.1149/07203.0073ecst.
Повний текст джерелаPrabhudesai, Gaurang, Manoharan Muruganathan, Le The Anh, Hiroshi Mizuta, Masahiro Hori, Yukinori Ono, Michiharu Tabe, and Daniel Moraru. "Single-charge band-to-band tunneling via multiple-dopant clusters in nanoscale Si Esaki diodes." Applied Physics Letters 114, no. 24 (June 17, 2019): 243502. http://dx.doi.org/10.1063/1.5100342.
Повний текст джерелаOehme, Michael, Marko Sarlija, Daniel Hahnel, Mathias Kaschel, Jens Werner, E. Kasper, and J. Schulze. "Very High Room-Temperature Peak-to-Valley Current Ratio in Si Esaki Tunneling Diodes (March 2010)." IEEE Transactions on Electron Devices 57, no. 11 (November 2010): 2857–63. http://dx.doi.org/10.1109/ted.2010.2068395.
Повний текст джерелаAnvarifard, Mohammad K., and Ali A. Orouji. "Enhancement of a Nanoscale Novel Esaki Tunneling Diode Source TFET (ETDS-TFET) for Low-Voltage Operations." Silicon 11, no. 6 (December 6, 2018): 2547–56. http://dx.doi.org/10.1007/s12633-018-0043-6.
Повний текст джерелаGiraud, R., M. Gryglas, L. Thevenard, A. Lemaître, and G. Faini. "Voltage-controlled tunneling anisotropic magnetoresistance of a ferromagnetic p++-(Ga,Mn)As∕n+-GaAs Zener-Esaki diode." Applied Physics Letters 87, no. 24 (December 12, 2005): 242505. http://dx.doi.org/10.1063/1.2137903.
Повний текст джерелаDIETL, TOMASZ. "DILUTED FERROMAGNETIC SEMICONDUCTORS — ORIGIN OF MAGNETIC ORDERING AND SPIN-TRANSPORT PROPERTIES." International Journal of Modern Physics B 22, no. 01n02 (January 20, 2008): 104–5. http://dx.doi.org/10.1142/s0217979208046116.
Повний текст джерелаShiogai, J., M. Ciorga, M. Utz, D. Schuh, M. Kohda, D. Bougeard, T. Nojima, D. Weiss, and J. Nitta. "In-plane tunneling anisotropic magnetoresistance in (Ga,Mn)As/GaAs Esaki diodes in the regime of the excess current." Applied Physics Letters 106, no. 26 (June 29, 2015): 262402. http://dx.doi.org/10.1063/1.4923309.
Повний текст джерелаYatsun, К. S. "Modification of active region of resonant tunnel diode." Radiotekhnika, no. 205 (July 2, 2021): 108–12. http://dx.doi.org/10.30837/rt.2021.2.205.11.
Повний текст джерелаEl Kazzi, S., A. Alian, B. Hsu, A. S. Verhulst, A. Walke, P. Favia, B. Douhard, et al. "Careful stoichiometry monitoring and doping control during the tunneling interface growth of an n + InAs(Si)/p + GaSb(Si) Esaki diode." Journal of Crystal Growth 484 (February 2018): 86–91. http://dx.doi.org/10.1016/j.jcrysgro.2017.12.035.
Повний текст джерелаHou, Wei-Chih, Pao-Chuan Shih, Hao-Hsiung Lin, Barry Bing-Ruey Wu, and Jiun-Yun Li. "High Band-to-Band Tunneling Current in InAs/GaSb Heterojunction Esaki Diodes by the Enhancement of Electric Fields Close to the Mesa Sidewalls." IEEE Transactions on Electron Devices 68, no. 8 (August 2021): 3748–54. http://dx.doi.org/10.1109/ted.2021.3086086.
Повний текст джерелаCiorga, M., A. Einwanger, U. Wurstbauer, D. Schuh, W. Wegscheider, and D. Weiss. "In-plane anisotropy of tunneling magnetoresistance and spin polarization in lateral spin injection devices with (Ga,Mn)As/GaAs spin-Esaki diode contacts." Physica E: Low-dimensional Systems and Nanostructures 42, no. 10 (September 2010): 2673–75. http://dx.doi.org/10.1016/j.physe.2010.04.004.
Повний текст джерелаZhang, Anni, Guofu Niu, Yiao Li, and Andries Scholten. "Compact Modeling of Forward Operation Band-to-Band andTrap-Assisted Tunneling Currents in SiGe HBTs." ECS Meeting Abstracts MA2022-02, no. 32 (October 9, 2022): 1201. http://dx.doi.org/10.1149/ma2022-02321201mtgabs.
Повний текст джерелаReuscher, G., G. Landwehr, M. Keim, H. J. Lugauer, F. Fischer, and A. Waag. "p+-BeTe/n+-ZnSe ESAKI tunnelling heterojunctions for II-VI optoelectronic devices." Electronics Letters 36, no. 3 (2000): 247. http://dx.doi.org/10.1049/el:20000230.
Повний текст джерелаReuscher, G., G. Landwehr, M. Keim, H. J. Lugauer, F. Fischer, and A. Waag. "Blue light emitting diode based on p+-BeTe/n+-ZnSe ESAKI tunnelling heterojunction." Electronics Letters 36, no. 12 (2000): 1056. http://dx.doi.org/10.1049/el:20000738.
Повний текст джерелаGilman, J. M. A., and A. G. O'Neill. "Modelling of resonant interband tunnelling structures as back-back inter-dimensional esaki diodes." Superlattices and Microstructures 14, no. 2-3 (September 1993): 129–36. http://dx.doi.org/10.1006/spmi.1993.1113.
Повний текст джерелаHwang, Wan Sik, Pei Zhao, Sung Geun Kim, Rusen Yan, Gerhard Klimeck, Alan Seabaugh, Susan K. Fullerton-Shirey, Huili Grace Xing, and Debdeep Jena. "Room-Temperature Graphene-Nanoribbon Tunneling Field-Effect Transistors." npj 2D Materials and Applications 3, no. 1 (November 7, 2019). http://dx.doi.org/10.1038/s41699-019-0127-1.
Повний текст джерелаMadarang, May Angelu, Rafael Jumar Chu, Yeonhwa Kim, Quang Nhat Dang Lung, Eunkyo Ju, Won Jun Choi, and Daehwan Jung. "Thermal degradation comparison of delta-doped GaAs tunnel junctions using Si and Te n-type dopants." AIP Advances 13, no. 4 (April 1, 2023). http://dx.doi.org/10.1063/5.0142751.
Повний текст джерелаLiu, Chia‐You, Kai‐Ying Tien, Po‐Yuan Chiu, Yu‐Jui Wu, Yen Chuang, Hsiang‐Shun Kao, and Jiun‐Yun Li. "Room Temperature Negative Differential Resistance and High Tunneling Current Density in GeSn Esaki Diodes." Advanced Materials, August 27, 2022, 2203888. http://dx.doi.org/10.1002/adma.202203888.
Повний текст джерела"Influence of Doping and Tunneling Interface Stoichiometry on n+In0.5Ga0.5As/p+GaAs0.5Sb0.5 Esaki Diode Behavior." ECS Meeting Abstracts, 2016. http://dx.doi.org/10.1149/ma2016-01/22/1158.
Повний текст джерелаArakawa, T., J. Shiogai, M. Maeda, M. Ciorga, M. Utz, D. Schuh, Y. Niimi, et al. "Tunneling mechanism in a (Ga,Mn)As/GaAs-based spin Esaki diode investigated by bias-dependent shot noise measurements." Physical Review B 102, no. 4 (July 23, 2020). http://dx.doi.org/10.1103/physrevb.102.045308.
Повний текст джерелаLi, Shukun, Menglai Lei, Rui Lang, Guo Yu, Huanqing Chen, Peijun Wen, Muhammad Saddique Akbar Khan, et al. "Demonstrating the electron blocking effect of AlGaN/GaN superlattice cladding layers in GaN-based laser diodes." Semiconductor Science and Technology, May 15, 2023. http://dx.doi.org/10.1088/1361-6641/acd573.
Повний текст джерелаNagase, Masanori, Tokio Takahashi, and Mitsuaki Shimizu. "Enhancement of nonvolatile memory characteristics caused by GaN/AlN resonant tunnelling diodes." Semiconductor Science and Technology, February 10, 2023. http://dx.doi.org/10.1088/1361-6641/acbaf8.
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