Готові списки джерел за темами / Er luminescence

Добірка наукової літератури з теми "Er luminescence"

Автор: Grafiati

Опубліковано: 14 березня 2023

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Статті в журналах з теми "Er luminescence"

Gao, Dangli, Jie Gao, Feng Gao, Qingqing Kuang, Yong Pan, Yafei Chen, and Zhengwei Pan. "Quintuple-mode dynamic anti-counterfeiting using multi-mode persistent phosphors." Journal of Materials Chemistry C 9, no. 46 (2021): 16634–44. http://dx.doi.org/10.1039/d1tc04568g.

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Multi-level, dynamic optical anti-counterfeiting has been achieved using multi-mode phosphors as luminescent inks. The ZGGO:Cr,Yb,Er phosphors exhibit quintuple luminescence modes, while the ZLGO:Mn phosphors possess quadruple luminescence modes.

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Ishikawa, Yukari, Junichi Niitsuma, Shigeru Tanaka, Dai Nezaki, Mitsuhiro Okamoto, Masashi Yamashita, Takashi Sekiguchi, and Noriyoshi Shibata. "Luminescent Characteristics of Undoped and Er-Doped ZnO Thin Films." Key Engineering Materials 301 (January 2006): 189–92. http://dx.doi.org/10.4028/www.scientific.net/kem.301.189.

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In order to clarify the fundamental luminescent mechanism of undoped and Er-doped ZnO thin films synthesized by sputtering method, cathodoluminescence (CL) from the samples formed on several kinds of substrate were measured. There was no explicit peak identified with luminescence from ZnO crystal defects in undoped sample, on the contrary, three sharp luminescent peaks were observed in the case of Er-doped ZnO film due to the internal transition of the additive Er ions in the CL spectrum. The mechanism was investigated in comparison with photoluminescence (PL).

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Moskvitina, E. A., V. A. Vorobiev, and B. M. Bolotin. "Study of Luminescent Properties of CaNb2O6:Yb, Er, Tm." Herald of the Bauman Moscow State Technical University. Series Natural Sciences, no. 3 (90) (June 2020): 78–87. http://dx.doi.org/10.18698/1812-3368-2020-3-78-87.

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We used solid phase synthesis at 1200 °C to create a luminophore based on CaNb2O6 and activated by ytterbium, erbium, and thulium ions. We present X-ray phase analysis results for the CaNb2O6:Yb, Er, Tm compound. The X-ray diffraction patterns obtained do not contain reflexes belonging to the intermediate phases. We investigated spectral properties of a calcium niobate-based luminophore upon excitation by a 940 nm laser. There are bands in the visible and IR regions to be found in the luminescence spectra. The up-conversion (anti-Stokes emission) luminescence spectrum comprises three bands peaking at 560, 676 and 807 nm. In the IR range, there are three peaks to be detected in the luminescence spectrum at 1010, 1540 and 1812 nm. We established the luminescence variation patterns for compounds based on CaNb2O6:Yb, Er, Tm. We determined the optimum Tm3+ concentration in the system that makes it possible to achieve the highest luminescence efficiency in the 1640--2000 nm range peaking at 1812 nm. We considered an energy transfer mechanism involving Yb3+ and Er3+ as luminescence stabilisers in a thulium ion. Employing erbium as an additional sensitiser allowed the luminescence intensity in the 1812 nm band to be increased by 1.5 time

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Wang, Zhuo, Guotao Sun, Jiabo Chen, Yao Xie, Hong Jiang, and Lining Sun. "Upconversion Luminescent Humidity Sensors Based on Lanthanide-Doped MOFs." Chemosensors 10, no. 2 (February 7, 2022): 66. http://dx.doi.org/10.3390/chemosensors10020066.

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Lanthanide-doped metal-organic frameworks (Y/Yb/Er-MOF) were synthesized by a low-cost solvothermal method. The obtained Y/Yb/Er-MOF shows the cooperative upconversion luminescence of Yb3+ and upconversion luminescence of Er3+ (Yb3+-sensitized) irradiated by a continuous wave 980 nm laser. In order to explore the potential application of Y/Yb/Er-MOF in relative humidity (RH) sensors, the RH responsiveness of Y/Yb/Er-MOF was investigated by measuring the intensity changes of upconversion luminescence. The Y/Yb/Er-MOF possesses two luminescence centers, in which Yb3+ forms emission at 500 nm through the cooperative luminescence effect, and Er3+ achieves 660 nm emission through excited state absorption and successive energy transfer from Yb3+. Hence, the ratio meter luminescence sensor for RH is constructed based on Y/Yb/Er-MOF. The results show that the response of Y/Yb/Er-MOF to RH presents a linear relationship in the range of 11–95%. The cycle stability of Y/Yb/Er-MOF responses to RH was investigated with the intensity changes of upconversion luminescence, and the recovery ratio was more than 93% each time. Therefore, the Y/Yb/Er-MOF is a humidity-sensitive material with great potential for applications such as humidity sensors.

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Pan, Er, Gongxun Bai, Yutao Peng, Liang Chen, and Shiqing Xu. "Promoting luminescence of Yb/Er codoped ferroelectric composite by polarization engineering for optoelectronic applications." Nanophotonics 8, no. 12 (September 17, 2019): 2215–23. http://dx.doi.org/10.1515/nanoph-2019-0230.

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AbstractFerroelectric oxide nanocrystals, in combination with the robust coupling of an electric field with crystal structure symmetry, makes such systems agreeable to field-induced crystal structural transformation. The luminescent properties of rare earth ions are sensitive to the symmetry of the surrounding crystal field. The luminescence tuning of rare earth ions is an important assignment in the research of luminescent materials. However, the current conditional feasibility and reversibility in the exploration of luminescence modification remain major challenges. In this article, the luminescence modulation of rare earth ions has been developed in Yb3+/Er3+ codoped ferroelectrics glass ceramics containing Bi4Ti3O12 nanocrystals through an electric field. The inclusion of nanocrystals in the glass matrix greatly enhances the electrical resistance. Both upconversion and near-infrared emissions of rare earth ions are effectively enhanced more than twice via polarization engineering. The electric field regulates the photonic properties of rare earth ions with excellent reversibility and nonvolatility in ferroelectrics. The effective modification by electric field provides a new scheme for optical storage and optoelectronic devices.

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Mar’ina, Ul’ana A., Viktor A. Vorob’ev, and Alexandr P. Mar’in. "CaSnO 3: Yb 3+, Er 3+, Ho 3+ system synthesis and study of its luminescence under IR excitation." Modern Electronic Materials 4, no. 2 (June 1, 2018): 71–75. http://dx.doi.org/10.3897/j.moem.4.2.38545.

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Solid state synthesis of Perovskite-like calcium stannate structure activated with three rare-Earth metal ions Yb3+,Er3+,Но3+ has been studied. The formation of the CaSnO3 : Yb3+,Er3+,Но3+ luminescent structure requires the following synthesis conditions: anneal temperature 1250 °C and duration at least 18 h. The luminescent properties of the specimens have been studied under 960 nm semiconductor diode laser excitation. The luminescence spectra contain bands in the visible and IR spectral regions. Yb3+ ions have been shown to act predominantly as sensibilizers capable of transferring part of absorbed energy to Er3+ and Но3+ ions thus intensifying their respective luminescence peaks. Er3+ ions also transfer part of absorbed energy to Но3+ ions leading to an increase in the intensity of the 1194 and 1950 nm IR luminescence bands. A schematic of possible energy transitions in the CaSnO3 : Yb3+,Er3+,Но3+ system under 960 nm laser excitation has been suggested. The energy transfer mechanism between Yb3+,Er3+ and Но3+ions has been described in detail. The luminescence intensity of the luminophore has been studied at 994, 1194, 1550 and 1950 nm as a function of Но3+ion concentration. The peak intensity of the 1194 and 1950 nm bands is the highest at a Но3+ion concentration of 0.007 at.fr. It has been suggested to use the CaSnO3 : Yb3+,Er3+,Но3+ luminescent structure for radiation sources capable of converting 960 nm IR radiation to ~2000 nm IR radiation.

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Ofuchi, H., D. Kawamura, J. Tsuchiya, N. Matsubara, M. Tabuchi, Y. Fujiwara, and Y. Takeda. "Local structure study of dilute Er in III–V semiconductors by fluorescence EXAFS." Journal of Synchrotron Radiation 5, no. 3 (May 1, 1998): 1061–63. http://dx.doi.org/10.1107/s0909049597018566.

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For understanding the luminescence of Er atoms in III–V semiconductors, OMVPE-grown InP doped with Er has been investigated by fluorescence EXAFS (extended X-ray absorption fine structure) in order to study the local structure around Er atoms. The local structures around the Er atoms doped in InP, with doping as dilute as 3 × 1012 Er atoms in a 1.5 mm × 1.0 mm spot, were successfully measured by fluorescence EXAFS. The EXAFS analysis revealed that the Er atoms doped in InP above 853 K (which showed low luminescence) formed the rock-salt-structure ErP, while the Er atoms doped in InP below 823 K (which showed high luminescence) substituted on the In site of InP. The dependence of the local structure on growth temperature was observed for the samples doped with 3 × 1012 atoms and 1.2 × 1013 atoms of Er.

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Ronzhin, N., E. Posokhina, O. Mogilnaya, A. Puzyr, J. Gitelson, and V. Bondar. "CYTOCHROME P450 SYSTEM MAY BE INVOLVED IN THE LIGHT EMISSION OF HIGHER FUNGI." Russian Journal of Biological Physics and Chemisrty 7, no. 2 (November 15, 2022): 320–24. http://dx.doi.org/10.29039/rusjbpc.2022.0522.

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The paper presents data that testify in favor of the participation of the cytochrome P450 system in the light emission of higher fungi. Extracts from mycelia of different species of luminous basidiomycetes containing fungal luminescent systems that provide luminescence in vitro were obtained. Applied conditions for the isolation of luminescent systems (sonication, centrifugation at 40000g) indicate the presence of membrane structures in the extracts, in particular, microsomes formed as a result of ultrasonic disintegration of the endoplasmic reticulum (ER). Differential spectral analysis of the extracts revealed the presence of two absorption peaks at 410 nm and 450 nm, which indicates the presence of cytochromes b5 and P450. The luminescence of the extracts is stimulated by reduced pyridine nucleotides, however, the addition of NADPH causes a higher level of luminescence compared with NADH. The addition of hydrogen peroxide significantly (from several times to 1-2 orders of magnitude) increases the luminescence intensity of extracts activated by NAD(P)H. The addition of fluconazole significantly inhibits the light emission of extracts. The data obtained indicates that the cytochrome P450 system associated with ER membranes may participate in the mechanism of light emission of higher fungi with the involvement in the process of electron transport enzyme systems: NADPH-dependent reductase of cytochrome P450 - cytochrome P450 and NADH-dependent reductase of cytochrome b5 - cytochrome b5 - cytochrome P450. In this case, cytochrome P450 may hydroxylate hispidin (precursor of the luminescent reaction substrate) to form luciferin and catalyze its oxidation in the presence of ROS with light emission.

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Luo, Jianxin, Chunyan Zhang, Changhong Li, Hanxiang Hu, and Bonian Hu. "Multiplicate sensitization of novel near-infrared luminescent linear copolymers based on Er, Nd and Yb-complexes." RSC Adv. 4, no. 101 (2014): 57393–401. http://dx.doi.org/10.1039/c4ra08093a.

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A series of novel near-infrared (NIR) luminescent linear copolymers (PCzLnQL₂) covalently linked with Ln-complexes were synthesized and characterized. The copolymers show broadband sensitized and highly efficient NIR luminescence.

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Carl, Frederike, Leonie Birk, Bettina Grauel, Monica Pons, Christian Würth, Ute Resch-Genger, and Markus Haase. "LiYF4:Yb/LiYF4 and LiYF4:Yb,Er/LiYF4 core/shell nanocrystals with luminescence decay times similar to YLF laser crystals and the upconversion quantum yield of the Yb,Er doped nanocrystals." Nano Research 14, no. 3 (October 16, 2020): 797–806. http://dx.doi.org/10.1007/s12274-020-3116-y.

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AbstractWe developed a procedure to prepare luminescent LiYF4:Yb/LiYF4 and LiYF4:Yb,Er/LiYF4 core/shell nanocrystals with a size of approximately 40 nm revealing luminescence decay times of the dopant ions that approach those of high-quality laser crystals of LiYF4:Yb (Yb:YLF) and LiYF4:Yb,Er (Yb,Er:YLF) with identical doping concentrations. As the luminescence decay times of Yb3+ and Er3+ are known to be very sensitive to the presence of quenchers, the long decay times of the core/shell nanocrystals indicate a very low number of defects in the core particles and at the core/shell interfaces. This improvement in the performance was achieved by introducing two important modifications in the commonly used oleic acid based synthesis. First, the shell was prepared via a newly developed method characterized by a very low nucleation rate for particles of pure LiYF4 shell material. Second, anhydrous acetates were used as precursors and additional drying steps were applied to reduce the incorporation of OH− in the crystal lattice, known to quench the emission of Yb3+ ions. Excitation power density (P)-dependent absolute measurements of the upconversion luminescence quantum yield (ΦUC) of LiYF4:Yb,Er/LiYF4 core/shell particles reveal a maximum value of 1.25% at P of 180 Wcm−2. Although lower than the values reported for NaYF4:18%Yb,2%Er core/shell nanocrystals with comparable sizes, these ΦUC values are the highest reported so far for LiYF4:18%Yb,2%Er/LiYF4 nanocrystals without additional dopants. Further improvements may nevertheless be possible by optimizing the dopant concentrations in the LiYF4 nanocrystals.

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Більше джерел

Дисертації з теми "Er luminescence"

Chen, Thomas D. (Thomas Duhwa). "Energy transfer and luminescence enhancement in Er-doped silicon." Thesis, Massachusetts Institute of Technology, 1999. http://hdl.handle.net/1721.1/9536.

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Thesis (Ph.D.)--Massachusetts Institute of Technology, Dept. of Materials Science and Engineering, 1999.
Also issued in pages.
Includes bibliographical references (leaves 143-152).
Er-doped silicon (Si:Er) is a promising light emitting material for silicon microphotonics. A study of Si:Er excitation/de-excitation mechanisms and luminescence enchancement is presented in this thesis. A model based on impurity Auger and nonradiative nmltiphonon transitions (NRl\·IPT) is shown to describe the temperature quenching of the photoluminescence (PL) intensity from 4K to 300K This model asserts that the nonradiative Auger process is mainly responsible for the temperature quenching below lOOK, and NRMPT backtransfer process is mainly responsible for the temperature quenching above lOOK. Junction photocufrei1t · spectmscopy (JPCS) measurements confirmed the existence of a backtransfer mechanism that grows with temperature in accordance to the model. In order to circumvent the onset of nonradiative transitions at higher temperatures, spontaneous emission enhancement in nrnltilayer Si/Si02 microcavities was explored as a means to increase the PL intensity. Because multilayer microcavity structures cannot be constructed using single crystal silicon, Er-doped polysilicon (poly-Si:Er) was developed as a light emitting material for these microcavities. The poly-Si:Er material exhibited a luminescence very similar to that of Er in single crystal silicon. By crystallizing poly-Si:Er from amorphous material and performing a post-anneal hydrogenation, a reasonably high PL intensity, which was limited by the excitation power, was attained. Microacavities with poly-Si:Er were fabricated and measured for the first time. Cavity quality factors of -60-300 were measured, and an Er enhancement of -20x was observed. A -lOx enhancement of a small background emission from the polysilicon was also observed. The observed enhancement factors match well with computed enhancement factors derived from electric field intensity distribution within the microcavity structure. Exploratory work in optical gain from Si:Er waveguides and vertically coupled ring resonntors was conducted. A fiber coupling technique for low temperature waveguide transmission experiments was developed for the gain experiments. The transmission spectrum of a 3-cm long waveguide was measured at temperatures down to 125K. Because the temperature could not be lowered without debonding the fiber, a net gain could not be observed in this particular waveguide. The application of stimulated emission in Si:Er devices is analyzed and discussed.
by Thomas Duhwa Chen.
Ph.D.

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ROGARD, STEPHANIE. "Contribution a l'etude de verres fluores dopes a l'erbium : dosage de er#3#+ dans des fibres optiques actives en zblan, mise en evidence de contraintes dans des pzg : er#3#+ evapores." Le Mans, 1997. http://www.theses.fr/1997LEMA1010.

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Les proprietes de luminescence de l'erbium dans des verres fluores sont exploitees d'une part pour effectuer des dosages de cet ion dans des fibres optiques actives en zblan, et d'autre part pour sonder l'etat de contrainte de films en pzg : er#3#+ obtenus par evaporation. Dans les deux cas, les analyses sont realisees sous microscope au moyen d'un spectrometre raman, la source excitatrice etant un laser a argon ionise. Les dosages de er#3#+ dans le zblan sont deduits d'une etude comparee de l'intensite d'une des bandes de luminescence de l'erbium (evoluant lineairement avec la puissance incidente) et l'intensite du signal raman de la matrice. Sur la gamme de concentration que nous avons exploree (inferieure a 5000 ppm en masse de erf#3), nous avons observe un comportement lineaire des rapports d'intensites en fonction de la concentration. La courbe d'etalonnage que nous avons etablie permet de determiner de facon non destructive la concentration d'erbium dans un echantillon inconnu en zblan avec une erreur relative inferieure a 12%. Ce travail a permis aussi de mettre en evidence des comportements non lineaires de l'intensite de certaines bandes de luminescence de l'erbium en fonction des puissances excitatrices. Nous en proposons une interpretation. L'etude de la luminescence de er#3#+ dans des films en pzg : er#3#+ obtenus par pvd (utilises pour realiser des guides d'onde plans) a revele des variations importantes (jusqu'a 30%) de l'intensite au cours du temps. Le phenomene est reproductible et irreversible. Nous l'avons etudie en fonction des conditions de preparation des echantillons, de la longueur d'onde, et de la puissance de la radiation excitatrice. Cet effet a ete interprete comme le temoignage de la relaxation de contraintes residuelles etablies au cours du depot. Une etude sous pression hydrostatique jusqu'a 218 kbars a permis de montrer que le signal de luminescence etait effectivement sensible a l'etat de contrainte avec en plus des modifications du profil des bandes. L'origine de ces effets est discutee.

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Chen, Kevin M. (Kevin Ming) 1974. "Electrical breakdown and luminescence from erbium oxide and Er-doped silicon thin films." Thesis, Massachusetts Institute of Technology, 1998. http://hdl.handle.net/1721.1/9816.

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Hussain, Syed Sajjad. "Elaboration, caractérisation structurale et luminescence de dépots AIN dopés Er obenus par PVD magnétron RF." Thesis, Nancy 1, 2010. http://www.theses.fr/2010NAN10060/document.

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Le travail présenté ici est une contribution à l’étude des propriétés de photoluminescence (PL) d’ions de terre rare (Erbium) insérés dans des matrices grand gap (AlN) de différentes morphologies et déposées sous forme de films minces. Une méthode de dépôt PVD magnétron rf a été utilisée pour obtenir des dépôts minces de nitrure d’aluminium dont les morphologies cristallines couvrent une gamme allant de la morphologie colonnaire classique jusqu’à l’état nano cristallisé et amorphe. On montre comment, plus la puissance magnétron est élevée plus les cristallites colonnaires d’AlN sont de grande dimension et comment l’application d’une polarisation négative sur les substrats de silicium permet l’obtention de dépôts nano cristallisés. Différents taux de dopage, de 0.1 à 6 at. %, sont obtenus avec une cible composite Al+Er.La PL à 1.54 [micro]m de l’atome d’Er a été étudiée en fonction des valeurs des paramètres « procédé » et donc en fonction des morphologies de AlN. Il a été montré que le maximum d'émission de PL a lieu pour un dopage de 1 at. %. L’étude montre que l'intensité de PL augmente avec la puissance magnétron et diminue avec l’intensité de polarisation des substrats. Ces deux résultats montrent que l'intensité PL est fortement corrélée à la morphologie des films. Plus les cristallites sont importantes, plus l'émission de PL est efficace. Cette corrélation entre la PL et la morphologie des matrices a permis de mettre en évidence le rôle des champs cristallins des défauts non radiatifs dans les cristallites. Le rôle des défauts a été confirmé par des mesures de luminescence résolue en temps, des mesures sur dépôts recuits et des mesures de PL à basse température. L’effet de diminution de la PL avec la température est très faible ce qui rend le matériau très prometteur pour des applications en optoélectronique et en photonique
The work presented here is a contribution to the study of the photoluminescence (PL) properties of a rare earth ions (Erbium) inserted inside wide gap matrices (AlN) of different morphologies and deposited as thin films. A physical vapour deposition magnetron rf technique has been used to obtain thin layers of aluminium nitride whose crystalline morphologies are ranging from the classical columnar morphology to the nanocrystalline state or amorphous. One shows how, the higher the magnetron power, the larger are the columnar crystallites and how the use of a negative polarization on the silicon substrates allows obtaining nano crystallized layers. Different doping rates (from 0.1 to 6 at. %) have been achieved using a Al+Er composite target.The PL of the Er atom at 1.54 [micro]m has been studied versus the process parameters and so as a function of the different AlN morphologies. It was shown that the maximum of PL emission is achieved for a rate of 1 atomic %. PL intensity was shown to increase with the magnetron power and decrease with the polarization intensity of the substrates. These two results demonstrate that PL intensity is strongly correlated to the matrix morphology. The larger the crystallites, the most efficient are the PL emission allows evidencing the role of the non radiative defects crystalline fields in the crystallites. The role of the defects was confirmed by time resolved photoluminescence measurements and by PL measurements performed on annealed samples or at low temperature. The decrease of PL with temperature is very weak, making this way the material very promising for optoelectronic and photonic applications

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LHOMER, CHRISTOPHE. "Proprietes electriques et optiques de terres rares (yb, er) dans les semiconducteurs iii-v. Mecanisme d'excitation de la luminescence." Rennes, INSA, 1991. http://www.theses.fr/1991ISAR0006.

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Dans le but de realiser des emetteurs infrarouge, les proprietes optiques des semiconducteurs iii-v dopes yb et er ont ete largement etudiees et sont assez bien connues. Malgre toutes ces etudes le probleme des mecanismes d'excitation de cette luminescence n'a pas ete resolu. L'etude des proprietes electriques de certains semiconducteurs iii-v dopes terre rare, nous a permis de montrer l'existence de pieges dans ces materiaux. Ces pieges crees par la terre rare ne sont pas lies a un changement d'etat de charge de l'impurete mais forment des pieges isoelectroniques. L'influence de ces pieges sur le declin de la luminescence du bord de bande met en evidence une capture efficace des porteurs photocrees. Nous proposons un modele rendant compte de ce piegeage et de la formation d'excitons lies a l'impurete terre rare. Des simulations numeriques dans le cas de yb et de er dans inp de type n nous permettent d'extraire des parametres relatifs a la formation d'excitons sur ces pieges. Ces excitons pieges peuvent, par transfert non radiatif, exciter les electrons de la couche 4f de la terre rare (tr) et cette tr emet une luminescence caracteristique des transitions internes (1 m pour yb#3#+ et 1,54 m pour er#3#+). On etablit a travers ce modele la correlation entre l'activite electrique et les proprietes optiques des terres rares dans ces semiconducteurs iii-v. Des manipulations de photoluminescence sous pression hydrostatique mettent en evidence ce transfert de l'exciton vers la terre rare et s'interpretent naturellement dans le cadre de ce modele

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Nascimento, Cristiane. "Propriétés structurales et optiques de verres et couches minces borates des systèmes TR : Y2O3-Al2O3-B2O3 ET TR:Y2O3-CaO-B2O3 (TR=Nd, Er)." Université Joseph Fourier (Grenoble), 2007. http://www.theses.fr/2007GRE10101.

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Dans notre travail, nous avons étudié la structure et les propriétés de luminescence des borates amorphes dopés aux terres rares (TR), contenant de l'yttrium, pour lesquels TR = Nd3+, Er3+. À cette fin, nous avons fabriqué des verres et des couches minces amorphes des systèmes Y2O3 - Al2O3, B2O3 (Y ALB) et Y2O3 - CaO - B2O3 (YCAB), que nous avons étudiés par analyse thermique (DTA, DSC, TG), diffraction de rayons X, spectroscopie vibrationnel1e (Raman et réflectance dans l'infrarouge), photoluminescence et spectroscopie de « m-lines ». Les échantillons massifs ont été synthétisés par les méthodes conventionelles de fusion/mise en forme, et les couches minces via plusieurs étapes de « spin coating » de solutions sol-gel. Les verres Y ALB présentent une température de transition vitreuse (Tg) plus élevée que les verres YCAB, respectivement 707717°C et 613-649°e. Les xerogels Y ALB obtenus à partir des solutions sol-gel présentent également un Tg, entre 713 et 716 °e. Les verres et couches minces dopés à l'erbium présentent une large bande d'émission autour de 54-66 nm pour la transition 4113/2 -> 4115/2 (1530-1535 nm). Une durée de vie maximale de 425 [MU]S a été obtenue pour les verres les moins dopés (0,1 mol%). Les verres dopés au néodyme présentent également une largeur de bande importante (36-40 nm) comparativement aux valeurs typiques pour les verres phosphates (21-25 nm). La spectroscopie m-lines a montré que les couches minces vitreuses dopées à l'erbium se comportent comme des guides d'onde planaires monomodes lorsqu'elles sont déposées sur des substrats de silice, et nous avons obtenus pour celles-ci des indices de réfraction de l'ordre de 1,59-1,65
Ln this work, we studied the structural and luminescent properties of rare earth (RE) doped amorphous borate materials containing yttrium, where RE = Nd'+, Er'+. For this purpose, bulk glasses and amorphous thin films ofthe systems Y,O, - Al,O, - B,O, (Y ALB) and Y,O, - CaO - B,O, (YCAB) were produced and their properties were investigated by thermal analysis (OTA, OSC, TG), x-ray diffraction, vibration al spectroscopy measurements (Raman and infrared reflectance), photoluminescence and m-lines spectroscopy. The bulk samples were synthesized by the conventional melting/molding method and the multilayer thin films were obtained by spin-coating sol-gel solutions. The Y ALB g1asses exhibited a higher glass transition temperature (Tg) than the YCAB glasses, 707 - 717°C and 613 - 649°C, respectively. The YALB xerogels obtained from the sol-gel solutions also presented a Tg, between 713-716°e. The glasses and thin films presented a complex borate structure, composed by a variety of superstructural units, such as metaborate rings and chains, pyroborate and orthoborate units. We found that the erbium doped glas ses and thin films presented a broad band emission of about 54 - 66 nm for the 411312 , > 4115/2 transition (1530 - 1535 nm). A maximum radiative lifetime of 425 Jls was obtained for the less doped glass samples (0,1 mol%). The neodymium doped glasses also presented a large bandwidth (38 nm), larger than values found for phosphate glasses (21-25 nm). The m-lines spectroscopy showed that the erbium glassy thin films behave as planar monomode waveguides when deposited on silica substrates, and the obtained refraction indices were about 1,59 - 1,65

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Ma, Lidong. "Investigation of multicolored and white light emission from IR-excited nano-particles:." Thesis, Boston College, 2021. http://hdl.handle.net/2345/bc-ir:109229.

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Thesis advisor: Baldassare Di Bartolo
Thesis advisor: Pradip Bakshi
The search for multicolored light produced by some IR laser-excited luminescent nano-powders has revealed, for laser power exceeding a threshold value, the emission of white light (WL) with black-body characteristics. I am directing my research to the study of the physical parameters that may influence the threshold power of the laser and the efficiency of the WL emission. A typical compound that I will investigate will consist of nano-powders of SrZrO3 doped with Yb. The parameters of relevance may include Yb concentration, pressure, temperature, size of nano-crystals, exciting power and wavelength of the laser, dynamical parameters such as decay and build-up patterns. The aim of my research will be both theoretical and experimental: theoretical for I will try to uncover the mechanism of the WL production and experimental for the possible application as efficient light sources of systems similar to the ones that I will investigate (oxide nano-powders doped with lanthanide or transition metal ions). The “new” light sources in the market (fluorescence lights sources, and LED lamps) beat the Edison bulbs in efficiency, but they do not produce the black-body emission of the Edison bulbs that is most pleasing to the eye. The search for efficient black-body type of sources is still on and we want to be a part of it
Thesis (PhD) — Boston College, 2021
Submitted to: Boston College. Graduate School of Arts and Sciences
Discipline: Physics

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Milori, Debora Marcondes Bastos Pereira. "Caracterização do LiNbO3:Er+3 como meio ativo para lasers de estado sólido através dos espectros de absorção/emissão polarizada e medida dos tempos de vida de luminescência." Universidade de São Paulo, 1989. http://www.teses.usp.br/teses/disponiveis/54/54131/tde-19052009-104534/.

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Este trabalho consiste na caracterização ótica de monocristais de LiNbO3: Er+3, visando a possibilidade deste sistema ser meio ativo para laser. Os resultados obtidos para absorção e emissão foram satisfatórios, sendo bastante compatíveis com os do modelo teórico adotado. O tempo de vida de luminescência das transições 4S3/2 - 4I15/2 e 4F9/2 - 4I15/2 foi medido, à temperatura ambiente e de nitrogênio líquido, mostrando que elas são possíveis candidatas a transições laser. Também foi feito um estudo sobre o comportamento das concentrações das impurezas indesejáveis OH- e Fe2+, através de tratamento térmico. O controle dessas concentrações foi feito através das técnicas de RPE e absorção ótica e os resultados mostraram que é perfeitamente possível eliminar tais impurezas de uma forma totalmente controlada.
This work consists in the optical characterization of LiNbO3:Er3+ single crystals, aiming to verify the possibility of this system being an active media for laser. The absorption and emission results were satisfactory, being compatible enough with the theoretical model adopted. The luminescence lifetime of the 4S3/2 - 4I15/2 e 4F9/2 - 4I15/2 transitions was measured at the ambient and liquid nitrogen temperature, showing that they are possible candidates for laser transitions. The behavior of the undesirable OH- and Fe2+ impurities was also studied through thermal treatment. The control of these concentrations was done using the EPR and optical absorption techniques and the results showed it is possible to eliminate such impurities in a totally controlled way.

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Klier, Dennis Tobias [Verfasser], and Michael Uwe [Akademischer Betreuer] Kumke. "Upconversion luminescence in Er-codoped NaYF4 nanoparticles : fundamental photophysics and optimization for life science applications / Dennis Tobias Klier ; Betreuer: Michael Uwe Kumke." Potsdam : Universität Potsdam, 2016. http://d-nb.info/1218401028/34.

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Morais, Evandro Augusto de [UNESP]. "Fotoluminescência e transporte elétrico em 'SNO IND. 2' dopado com os íons terras-raras 'ER POT. 3'/' e 'EU POT. 3'/'." Universidade Estadual Paulista (UNESP), 2008. http://hdl.handle.net/11449/100909.

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Made available in DSpace on 2014-06-11T19:31:04Z (GMT). No. of bitstreams: 0 Previous issue date: 2008-02-28Bitstream added on 2014-06-13T19:40:49Z : No. of bitstreams: 1 morais_ea_dr_bauru.pdf: 1277460 bytes, checksum: 74230ee0501ddb2bea981d37cf21ce82 (MD5)
Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)
Através do processo sol-gel, foi sintetizado o material semicondutor dióxido de estanho ('SNO IND. 2') dopado com as terras-raras 'ER' e 'EU', sendo obtidas amostras na forma de xerogéis (pós) e filmes finos, neste último caso pela técnica de emersão. A introdução das terras-raras provoca desordens estruturais no material e impede o crescimento dos cristalitos, cujo tamanho varia entre 5-20NM, devido a segregação dos terras-raras na superfície das partículas, o que está relacionado a sua baixa solubilidade em 'SNO IND. 2'. A análise das propriedades ópticas mostra emissão eficiente dos íons terras-raras 'ER POT. 3'/' e 'EU POT. 3'/' quando introduzidos nesta matriz. A emissão é confirmada tanto por excitação direta destes íons, como por processos de transferência de energia, tanto correspondente ao bandgap da matriz como a transição 'INTPOT. 2 F IND. 7/2 de íon 'YB POT. 3'/' em amostras codopadas com 'ER POT. 3'/' e 'YB POT. 3'/'. A análise por fotoluminescência permite distinguir terras-raras em sítios substitucionais a 'SN POT. 4'/' ou em centros na superfície das partículas. A investigação das propriedades elétricas mostra um aumento de resistividade de até seis ordens de magnitude em relação a filmes não dopados. Isto está relacionado com o carácter aceitador de íons 'ER POT. 3'/' e 'EU POT. 3'/' em 'SNO IND. 2', que é naturalmente tipo-N, oque acarreta alta compensação de carga e também barreiras de potencial intergranulares que diminuem a mobilidade eletrônica. Foi investidada também a captura de elétrons fotoexcitados por centros de 'ER' e 'EU' termicamente ativados. À medida que se aumenta a temperatura e a concentração de 'ER' e 'EU', maior é a taxa de captura. Do modelo proposto, foram obtidos parâmetros importantes, como de captura devido aos defeitos dominantes.
The semiconductor material tin dioxide ('SNO IND. 2') has been produced by the sol-gel process, doped with the rare-earth 'ER' and 'EU'. Samples are obtained in the from of xerogels (powder) and thin films, in this latter case by the dip-coating technique. The incorporation of rare-earth ions promotes structural disorder in the material, which avoids the crystallite growth due to segregation of rare-earth ions to the surface, which is related to the low solubility in the 'SNO IND. 2' matrix. The crystallite size is in the range 5-20NM. Analysis of optical properties shows efficient emission of rare-earth ions 'ER POT. 3'/' and 'EU POT. 3'/', whem introduced in this matrix. This emission is confirmed either by direct excitation of ions, as well as by energy transfer processes, corresponding to the matrix bandgap or to the transition 'INTPOT. 2 F IND. 7/2 of íon 'YB POT. 3'/' ion in samples codoped with 'ER POT. 3'/' and 'YB POT. 3'/'. Photoluminescence spectra allow distinguishing rare-earth ions in substitutional sites of 'SN' and particles surface located centers. Investigation of electrical properties show a resitivity increase up to 6 orders of magnitude compared to undoped films. This behavior is related with the acceptor like character of 'ER POT. 3'/' and 'EU POT. 3'/' in 'SNO IND. 2', which is naturally a N-type material, leading to a high charge compensation degree and also to intergrain potential barriers that decrease the electronic mobility. It has also been investigated the capture of photogenerated electrons by ER' and 'ER' thermally activated centers. When the temperature is raised or the ER' or 'EU' concentratin is increased the capture ratebecomes faster. From a proposed model, some very relevent parameters are obtained, scu as the capture barrier due to the dominating defect.

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Частини книг з теми "Er luminescence"

Liu, Min, Sheng Wu Wang, Jian Zhang, Li Qiong An, and Li Dong Chen. "Preparation and Upconversion Luminescence of YAG: Er³⁺ Powders." In High-Performance Ceramics III, 517–20. Stafa: Trans Tech Publications Ltd., 2007. http://dx.doi.org/10.4028/0-87849-959-8.517.

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Takahei, K., P. Whitney, H. Nakagome, and K. Uwai. "Photo- and Electro-Luminescence of Rare Earth (Er, Yb)-Doped GaAs and InP Grown by Metalorganic Chemical Vapor Deposition." In Springer Proceedings in Physics, 382–85. Berlin, Heidelberg: Springer Berlin Heidelberg, 1989. http://dx.doi.org/10.1007/978-3-642-93430-8_78.

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Ishikawa, Yukari, Junichi Niitsuma, Shigeru Tanaka, Dai Nezaki, Mitsuhiro Okamoto, Masashi Yamashita, Takashi Sekiguchi, and Noriyoshi Shibata. "Luminescent Characteristics of Undoped and Er-Doped ZnO Thin Films." In Electroceramics in Japan VIII, 189–92. Stafa: Trans Tech Publications Ltd., 2006. http://dx.doi.org/10.4028/0-87849-982-2.189.

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Oh, Jae Suk, Sang Il Seok, and Ha Kyun Jung. "Luminescent Properties in NIR Region of LaPO₄:Er/LaPO₄ Core/Shell Nanoparticles." In Solid State Phenomena, 471–74. Stafa: Trans Tech Publications Ltd., 2007. http://dx.doi.org/10.4028/3-908451-31-0.471.

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Cheng, Chang Hua, You Na Wu, and Zhao Xian Xiong. "Preparation of Upconversion Luminescent NaYF₄ Co-Doped with Yb³⁺/Er³⁺ via Hydrothermal Synthesis." In High-Performance Ceramics V, 394–97. Stafa: Trans Tech Publications Ltd., 2008. http://dx.doi.org/10.4028/0-87849-473-1.394.

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Тези доповідей конференцій з теми "Er luminescence"

Wang, Junzhuan, Zhuoqiong Shi, Yi Shi, Zhensheng Tao, Lin Pu, Lijia Pan, Rong Zhang, Youdou Zheng, and Fang Lu. "Broad excitation of Er luminescence in Er-doped HfO2 films." In 2008 9th International Conference on Solid-State and Integrated-Circuit Technology (ICSICT). IEEE, 2008. http://dx.doi.org/10.1109/icsict.2008.4734726.

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Park, Nae-Man, Tae-Youb Kim, Sang Hyeob Kim, Gun Yong Sung, Baek-Hyun Kim, Seong-Ju Park, Kwan Sik Cho, Jung H. Shin, Jung-Kun Lee, and Michael Nastasi. "Luminescence of Er-doped amorphous silicon quantum dots." In Integrated Optoelectronic Devices 2004, edited by Diana L. Huffaker and Pallab Bhattacharya. SPIE, 2004. http://dx.doi.org/10.1117/12.528148.

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Fujiwara, Y., T. Ito, H. Ofuchi, J. Tsuchiya, A. Tanigawa, M. Tabuchi, and Y. Takeda. "Extremely sharp Er-related luminescence in Er-doped GaP grown by OMVPE with TBP." In Compound Semiconductors 1997. Proceedings of the IEEE Twenty-Fourth International Symposium on Compound Semiconductors. IEEE, 1997. http://dx.doi.org/10.1109/iscs.1998.711615.

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Sobolev, Nikolai A., Oleg V. Aleksandrov, Mikhail S. Bresler, Oleg B. Gusev, Pavel E. Khakuashev, Yurii A. Kudryavtsev, Miroslav I. Makoviichuk, et al. "Influence of impurities on luminescence of Er-doped silicon structures." In Photonics West '97, edited by E. F. Schubert. SPIE, 1997. http://dx.doi.org/10.1117/12.271042.

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Wang, X. J., H. Isshiki, T. Kimura, and Z. Zhou. "Enhanced Er³⁺ luminescence of Er silicate through Y and Yb co-doping." In 2009 6th IEEE International Conference on Group IV Photonics (GFP). IEEE, 2009. http://dx.doi.org/10.1109/group4.2009.5338287.

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Laia, A. S., A. C. Brandão-Silva, M. A. Gomes, Z. S. Macedo, M. E. G. Valério, J. J. Rodrigues, and M. A. R. C. Alencar. "Er-doped Y2O3 nanocrystals for optical thermometry within biological windows." In Latin America Optics and Photonics Conference. Washington, D.C.: Optica Publishing Group, 2022. http://dx.doi.org/10.1364/laop.2022.w1c.6.

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Анотація:

Optical thermometry within biological windows based on Er3+-doped Y2O3 nanocrystals emission is proposed. Luminescence intensity ratio between the emission bands at 1013 nm and 845 nm was exploited and sensing with high sensitivity achieved.

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Romanishkin, I. D., V. Yu Proydakova, S. V. Kuznetsov, and D. V. Pominova. "Yb-Er-doped nanoparticles synthesis temperature effect on upconversion luminescence lifetime." In 2020 International Conference Laser Optics (ICLO). IEEE, 2020. http://dx.doi.org/10.1109/iclo48556.2020.9285676.

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Andreev, B. A., Z. F. Krasil'nik, D. I. Kryzhkov, V. P. Kuznetsov, E. N. Morozova, V. B. Shmagin, M. V. Stepikohova, and A. N. Yablonskii. "Er-related luminescence in Si:Er epilayers grown with sublimation molecular-beam epitaxy." In XI Feofilov Symposium on Spectropscopy of Crystals Activated by Rare-Earth and Transition Metal Ions, edited by Alexander A. Kaplyanskii, Boris Z. Malkin, and Sergey I. Nikitin. SPIE, 2002. http://dx.doi.org/10.1117/12.475319.

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Toudert, J., S. Nunez-Sanchez, M. Jimenez de Castro, R. Sema, J. Cortes, C. N. Afonso, Y. Luo, C. Borca, and P. Hoffmann. "Efficient luminescence response from nanoscale controlled Er-Yb distribution in Al2O3 waveguides." In 2007 European Conference on Lasers and Electro-Optics and the International Quantum Electronics Conference. IEEE, 2007. http://dx.doi.org/10.1109/cleoe-iqec.2007.4386173.

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Takahei, Kenichiro, and Akihito Taguchi. "Efficient Er Luminescence Centers Formed in GaAs by MOCVD with Oxygen Codoping." In 1993 International Conference on Solid State Devices and Materials. The Japan Society of Applied Physics, 1993. http://dx.doi.org/10.7567/ssdm.1993.d-2-6.

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