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Статті в журналах з теми "Epitaxie van der Waals"

Автор: Grafiati

Опубліковано: 2 листопада 2024

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1

Mulder, Liesbeth, Daan H. Wielens, Yorick A. Birkhölzer, Alexander Brinkman, and Omar Concepción. "Revisiting the van der Waals Epitaxy in the Case of (Bi0.4Sb0.6)2Te3 Thin Films on Dissimilar Substrates." Nanomaterials 12, no. 11 (May 24, 2022): 1790. http://dx.doi.org/10.3390/nano12111790.

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Ultrathin films of the ternary topological insulator (Bi0.4Sb0.6)2Te3 are fabricated by molecular beam epitaxy. Although it is generally assumed that the ternary topological insulator tellurides grow by van der Waals epitaxy, our results show that the influence of the substrate is substantial and governs the formation of defects, mosaicity, and twin domains. For this comparative study, InP (111)A, Al2O3 (001), and SrTiO3 (111) substrates were selected. While the films deposited on lattice-matched InP (111)A show van der Waals epitaxial relations, our results point to a quasi-van der Waals epitaxy for the films grown on substrates with a larger lattice mismatch.

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2

Ye, Lianxu, Di Zhang, Juanjuan Lu, Sicheng Xu, Ruixing Xu, Jiyu Fan, Rujun Tang, et al. "Epitaxial (110)-oriented La_0.7Sr_0.3MnO₃ film directly on flexible mica substrate." Journal of Physics D: Applied Physics 55, no. 22 (March 4, 2022): 224002. http://dx.doi.org/10.1088/1361-6463/ac570d.

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Abstract Manufacture and characterizations of perovskite-mica van der Waals epitaxy heterostructures are a critical step to realize the application of flexible devices. However, the fabrication and investigation of the van der Waals epitaxy architectures grown on mica substrates are mainly limited to (111)-oriented perovskite functional oxide thin films up to now and buffer layers are highly needed. In this work, we directly grew La0.7Sr0.3MnO3 (LSMO) thin films on mica substrates without using any buffer layer. By the characterizations of x-ray diffractometer and scanning transmission electron microscopy, we demonstrate the epitaxial growth of the (110)-oriented LSMO thin film on the mica substrate. The LSMO thin film grown on the mica substrate via van der Waals epitaxy adopts domain matching epitaxy instead of conventional lattice matching epitaxy. Two kinds of domain matching relationships between the LSMO thin film and mica substrate are sketched by Visualization for Electronic and STructural Analysis software and discussed. A decent ferromagnetism retains in the (110)-oriented LSMO thin film. Our work demonstrates a new pathway to fabricate (110)-oriented functional oxide thin films on flexible mica substrates directly.

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3

Chen, Hou-Guang, Yung-Hui Shih, Huei-Sen Wang, Sheng-Rui Jian, Tzu-Yi Yang, and Shu-Chien Chuang. "Van der Waals Epitaxial Growth of ZnO Films on Mica Substrates in Low-Temperature Aqueous Solution." Coatings 12, no. 5 (May 20, 2022): 706. http://dx.doi.org/10.3390/coatings12050706.

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In this article, we demonstrate the van der Waals (vdW) epitaxial growth of ZnO layers on mica substrates through a low-temperature hydrothermal process. The thermal pretreatment of mica substrates prior to the hydrothermal growth of ZnO is essential for growing ZnO crystals in epitaxy with the mica substrates. The addition of sodium citrate into the growth solution significantly promotes the growth of ZnO crystallites in a lateral direction to achieve fully coalesced, continuous ZnO epitaxial layers. As confirmed through transmission electron microscopy, the epitaxial paradigm of the ZnO layer on the mica substrate was regarded as an incommensurate van der Waals epitaxy. Furthermore, through the association of the Mist-CVD process, the high-density and uniform distribution of ZnO seeds preferentially occurred on mica substrates, leading to greatly improving the epitaxial qualities of the hydrothermally grown ZnO layers and obtaining flat surface morphologies. The electrical and optoelectrical properties of the vdW epitaxial ZnO layer grown on mica substrates were comparable with those grown on sapphire substrates through conventional solution-based epitaxy techniques.

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4

Ren, Fang, Bingyao Liu, Zhaolong Chen, Yue Yin, Jingyu Sun, Shuo Zhang, Bei Jiang, et al. "Van der Waals epitaxy of nearly single-crystalline nitride films on amorphous graphene-glass wafer." Science Advances 7, no. 31 (July 2021): eabf5011. http://dx.doi.org/10.1126/sciadv.abf5011.

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Van der Waals epitaxy provides a fertile playground for the monolithic integration of various materials for advanced electronics and optoelectronics. Here, a previously unidentified nanorod-assisted van der Waals epitaxy is developed and nearly single-crystalline GaN films are first grown on amorphous silica glass substrates using a graphene interfacial layer. The epitaxial GaN-based light-emitting diode structures, with a record internal quantum efficiency, can be readily lifted off, becoming large-size flexible devices. Without the effects of the potential field from a single-crystalline substrate, we expect this approach to be equally applicable for high-quality growth of nitrides on arbitrary substrates. Our work provides a revolutionary technology for the growth of high-quality semiconductors, thus enabling the hetero-integration of highly mismatched material systems.

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5

Wang, S. F., W. K. Fong, W. Wang, K. K. Leung, and C. Surya. "Growth of SnS van der Waals Epitaxies on Layered Substrates." MRS Proceedings 1493 (2013): 213–17. http://dx.doi.org/10.1557/opl.2013.234.

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ABSTRACTIn this paper we present systematic investigations on the growth of SnS van der Waals epitaxies (vdWEs) on different substrates, including crystalline and layered substrates, by molecular beam epitaxy (MBE). Experimental growth of SnS on conventional 3D substrates, such as GaAs, indicates strong interaction between the SnS layer and the substrate resulting in poor crystallinity in general. Substantial improvement in the film crystallinity can be obtained when the deposition is made on layered substrates, with saturated surface bonds, as observed in SnS films deposited on mica and crystalline substrates with a graphene buffer layer. Crystal size as large as one micron and rocking curve FWHM of 0.118° was observed despite the large lattice mismatches. This represents significant improvement over the reported value of ∼3°. Several symmetric growth orientations are observed for films grown on mica substrates. The results indicate that weak vdW interactions between the saturated bonds of the substrate surface and the SnS unit layer which is an important factor for achieving high quality epitaxy layered materials.

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6

Ryu, Huije, Hyunik Park, Joung-Hun Kim, Fan Ren, Jihyun Kim, Gwan-Hyoung Lee, and Stephen J. Pearton. "Two-dimensional material templates for van der Waals epitaxy, remote epitaxy, and intercalation growth." Applied Physics Reviews 9, no. 3 (September 2022): 031305. http://dx.doi.org/10.1063/5.0090373.

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Epitaxial growth, a crystallographically oriented growth induced by the chemical bonding between crystalline substrate and atomic building blocks, has been a key technique in the thin-film and heterostructure applications of semiconductors. However, the epitaxial growth technique is limited by different lattice mismatch and thermal expansion coefficients of dissimilar crystals. Two-dimensional (2D) materials with dangling bond-free van der Waals surfaces have been used as growth templates for the hetero-integration of highly mismatched materials. Moreover, the ultrathin nature of 2D materials also allows for remote epitaxial growth and confinement growth of quasi-2D materials via intercalation. Here, we review the hetero-dimensional growth on 2D substrates: van der Waals epitaxy (vdWE), quasi vdWE, and intercalation growth. We discuss the growth mechanism and fundamental challenges for vdWE on 2D substrates. We also examine emerging vdWE techniques that use epitaxial liftoff and confinement epitaxial growth in detail. Finally, we give a brief review of radiation effects in 2D materials and contrast the damage induced with their 3D counterparts.

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7

Ueno, Tetsuji, Hideki Yamamoto, Koichiro Saiki, and Atsushi Koma. "Van der Waals epitaxy of metal dihalide." Applied Surface Science 113-114 (April 1997): 33–37. http://dx.doi.org/10.1016/s0169-4332(96)00770-2.

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8

Lang, O., A. Klein, R. Schlaf, T. Löher, C. Pettenkofer, W. Jaegermann, and A. Chevy. "heterointerfaces prepared by Van der Waals epitaxy." Journal of Crystal Growth 146, no. 1-4 (January 1995): 439–43. http://dx.doi.org/10.1016/0022-0248(94)00504-4.

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9

Chang, Po-Han, Chia-Shuo Li, Fang-Yu Fu, Kuo-You Huang, Ang-Sheng Chou, and Chih-I. Wu. "Van Der Waals Epitaxy: Ultrasensitive Photoresponsive Devices Based on Graphene/BiI3 van der Waals Epitaxial Heterostructures (Adv. Funct. Mater. 23/2018)." Advanced Functional Materials 28, no. 23 (June 2018): 1870160. http://dx.doi.org/10.1002/adfm.201870160.

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10

Li, Xufan, Ming-Wei Lin, Junhao Lin, Bing Huang, Alexander A. Puretzky, Cheng Ma, Kai Wang, et al. "Two-dimensional GaSe/MoSe2misfit bilayer heterojunctions by van der Waals epitaxy." Science Advances 2, no. 4 (April 2016): e1501882. http://dx.doi.org/10.1126/sciadv.1501882.

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Two-dimensional (2D) heterostructures hold the promise for future atomically thin electronics and optoelectronics because of their diverse functionalities. Although heterostructures consisting of different 2D materials with well-matched lattices and novel physical properties have been successfully fabricated via van der Waals (vdW) epitaxy, constructing heterostructures from layered semiconductors with large lattice misfits remains challenging. We report the growth of 2D GaSe/MoSe2heterostructures with a large lattice misfit using two-step chemical vapor deposition (CVD). Both vertically stacked and lateral heterostructures are demonstrated. The vertically stacked GaSe/MoSe2heterostructures exhibit vdW epitaxy with well-aligned lattice orientation between the two layers, forming a periodic superlattice. However, the lateral heterostructures exhibit no lateral epitaxial alignment at the interface between GaSe and MoSe2crystalline domains. Instead of a direct lateral connection at the boundary region where the same lattice orientation is observed between GaSe and MoSe2monolayer domains in lateral GaSe/MoSe2heterostructures, GaSe monolayers are found to overgrow MoSe2during CVD, forming a stripe of vertically stacked vdW heterostructures at the crystal interface. Such vertically stacked vdW GaSe/MoSe2heterostructures are shown to formp-njunctions with effective transport and separation of photogenerated charge carriers between layers, resulting in a gate-tunable photovoltaic response. These GaSe/MoSe2vdW heterostructures should have applications as gate-tunable field-effect transistors, photodetectors, and solar cells.

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11

Wang, Shifeng, Yong Li, Annie Ng, Qing Hu, Qianyu Zhou, Xin Li, and Hao Liu. "2D Bi2Se3 van der Waals Epitaxy on Mica for Optoelectronics Applications." Nanomaterials 10, no. 9 (August 22, 2020): 1653. http://dx.doi.org/10.3390/nano10091653.

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Bi2Se3 possesses a two-dimensional layered rhombohedral crystal structure, where the quintuple layers (QLs) are covalently bonded within the layers but weakly held together by van der Waals forces between the adjacent QLs. It is also pointed out that Bi2Se3 is a topological insulator, making it a promising candidate for a wide range of electronic and optoelectronic applications. In this study, we investigate the growth of high-quality Bi2Se3 thin films on mica by the molecular beam epitaxy technique. The films exhibited a layered structure and highly c-axis-preferred growth orientation with an XRD rocking curve full-width at half-maximum (FWHM) of 0.088°, clearly demonstrating excellent crystallinity for the Bi2Se3 deposited on the mica substrate. The growth mechanism was studied by using an interface model associated with the coincidence site lattice unit (CSLU) developed for van der Waals epitaxies. This high (001) texture favors electron transport in the material. Hall measurements revealed a mobility of 726 cm2/(Vs) at room temperature and up to 1469 cm2/(Vs) at 12 K. The results illustrate excellent electron mobility arising from the superior crystallinity of the films with significant implications for applications in conducting electrodes in optoelectronic devices on flexible substrates.

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12

Koma, Atsushi, and Kazuki Yoshimura. "Ultrasharp interfaces grown with Van Der Waals epitaxy." Surface Science Letters 174, no. 1-3 (August 1986): A459. http://dx.doi.org/10.1016/0167-2584(86)90098-8.

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13

Koma, Atsushi, and Kazuki Yoshimura. "Ultrasharp interfaces grown with Van der Waals epitaxy." Surface Science 174, no. 1-3 (August 1986): 556–60. http://dx.doi.org/10.1016/0039-6028(86)90471-1.

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14

Guo, Lu’an, Yitao Wang, Dogan Kaya, Richard E. Palmer, Guangde Chen, and Quanmin Guo. "Orientational Epitaxy of van der Waals Molecular Heterostructures." Nano Letters 18, no. 8 (July 12, 2018): 5257–61. http://dx.doi.org/10.1021/acs.nanolett.8b02238.

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15

Nakayama, Yasuo, Ryohei Tsuruta, and Tomoyuki Koganezawa. "‘Molecular Beam Epitaxy’ on Organic Semiconductor Single Crystals: Characterization of Well-Defined Molecular Interfaces by Synchrotron Radiation X-ray Diffraction Techniques." Materials 15, no. 20 (October 13, 2022): 7119. http://dx.doi.org/10.3390/ma15207119.

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Epitaxial growth, often termed “epitaxy”, is one of the most essential techniques underpinning semiconductor electronics, because crystallinities of the materials seriously dominate operation efficiencies of the electronic devices such as power gain/consumption, response speed, heat loss, and so on. In contrast to already well-established epitaxial growth methodologies for inorganic (covalent or ionic) semiconductors, studies on inter-molecular (van der Waals) epitaxy for organic semiconductors is still in the initial stage. In the present review paper, we briefly summarize recent works on the epitaxial inter-molecular junctions built on organic semiconductor single-crystal surfaces, particularly on single crystals of pentacene and rubrene. Experimental methodologies applicable for the determination of crystal structures of such organic single-crystal-based molecular junctions are also illustrated.

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16

Vermeulen, Paul Alexander, Jamo Momand, and Bart Jan Kooi. "Low temperature epitaxy of tungsten–telluride heterostructure films." CrystEngComm 21, no. 22 (2019): 3409–14. http://dx.doi.org/10.1039/c9ce00338j.

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17

Baboli, Mohadeseh A., Michael A. Slocum, Hyun Kum, Thomas S. Wilhelm, Stephen J. Polly, Seth M. Hubbard, and Parsian K. Mohseni. "Improving pseudo-van der Waals epitaxy of self-assembled InAs nanowires on graphene via MOCVD parameter space mapping." CrystEngComm 21, no. 4 (2019): 602–15. http://dx.doi.org/10.1039/c8ce01666f.

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18

Park, Jeong-Hwan, Xu Yang, Jun-Yeob Lee, Mun-Do Park, Si-Young Bae, Markus Pristovsek, Hiroshi Amano, and Dong-Seon Lee. "The stability of graphene and boron nitride for III-nitride epitaxy and post-growth exfoliation." Chemical Science 12, no. 22 (2021): 7713–19. http://dx.doi.org/10.1039/d1sc01642c.

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A challenging approach, but one providing a key solution to material growth, remote epitaxy (RE)—a novel concept related to van der Waals epitaxy (vdWE)—requires the stability of a two-dimensional (2-D) material.

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19

Tiefenbacher, S., H. Sehnert, C. Pettenkofer, and W. Jaegermann. "Epitaxial films of WS2 by metal organic van der Waals epitaxy (MO-VDWE)." Surface Science 318, no. 1-2 (October 1994): L1161—L1164. http://dx.doi.org/10.1016/0039-6028(94)90331-x.

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20

Aretouli, Kleopatra Emmanouil, Dimitra Tsoutsou, Polychronis Tsipas, Jose Marquez-Velasco, Sigiava Aminalragia Giamini, Nicolaos Kelaidis, Vassilis Psycharis, and Athanasios Dimoulas. "Epitaxial 2D SnSe2/ 2D WSe2 van der Waals Heterostructures." ACS Applied Materials & Interfaces 8, no. 35 (August 25, 2016): 23222–29. http://dx.doi.org/10.1021/acsami.6b02933.

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21

Viswanathan, Ravi. "Strained-layer Van Der Waals epitaxy in a Langmuir-Blodgett film." Proceedings, annual meeting, Electron Microscopy Society of America 51 (August 1, 1993): 514–15. http://dx.doi.org/10.1017/s042482010014840x.

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Langmuir-Blodgett (LB) films are layered structures of amphiphilic molecules which are assembled by successive deposition on a solid substrate from a monolayer at the air water interface. Most of the potential applications of LB films (molecular electronics, cell membrane models, biosensors) are based on the premise of perfect molecular layering and orientation. The technique of atomic force microscopy (AFM), which probes only the outermost layer of the film, has opened up the study of the surfaces of these films which occupy a unique position at the intersection of surface science and complex fluids. We show here that the growth of lead stearate (PbSt) LB films on mica substrates proceeds by a new type of epitaxy which we call “strained layer van der Waals epitaxy” because it represents a compromise between the mechanisms of strained-layer epitaxy and van der Waals epitaxy.The PbSt films were prepared with the standard Langmuir-Blodgett vertical dipping method and imaged with the AFM in air at ambient temperature.

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22

Littlejohn, A. J., Y. Xiang, E. Rauch, T. M. Lu, and G. C. Wang. "van der Waals epitaxy of Ge films on mica." Journal of Applied Physics 122, no. 18 (November 14, 2017): 185305. http://dx.doi.org/10.1063/1.5000502.

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23

Koma, Atsushi. "Van der Waals epitaxy for highly lattice-mismatched systems." Journal of Crystal Growth 201-202 (May 1999): 236–41. http://dx.doi.org/10.1016/s0022-0248(98)01329-3.

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24

Walsh, Lee A., and Christopher L. Hinkle. "van der Waals epitaxy: 2D materials and topological insulators." Applied Materials Today 9 (December 2017): 504–15. http://dx.doi.org/10.1016/j.apmt.2017.09.010.

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25

Chen, Qi, Yue Yin, Fang Ren, Meng Liang, Xiaoyan Yi, and Zhiqiang Liu. "Van der Waals Epitaxy of III-Nitrides and Its Applications." Materials 13, no. 17 (August 31, 2020): 3835. http://dx.doi.org/10.3390/ma13173835.

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III-nitride semiconductors have wide bandgap and high carrier mobility, making them suitable candidates for light-emitting diodes (LEDs), laser diodes (LDs), high electron mobility transistors (HEMTs) and other optoelectronics. Compared with conventional epitaxy technique, van der Waals epitaxy (vdWE) has been proven to be a useful route to relax the requirements of lattice mismatch and thermal mismatch between the nitride epilayers and the substrates. By using vdWE, the stress in the epilayer can be sufficiently relaxed, and the epilayer can be easily exfoliated and transferred, which provides opportunities for novel device design and fabrication. In this paper, we review and discuss the important progress on the researches of nitrides vdWE. The potential applications of nitride vdWE are also prospected.

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26

Napoleonov, B., D. Petrova, P. Rafailov, V. Videva, V. Strijkova, D. Karashanova, D. Dimitrov, and V. Marinova. "Growth of 2D MoS₂ on sapphire and mica." Journal of Physics: Conference Series 2710, no. 1 (February 1, 2024): 012016. http://dx.doi.org/10.1088/1742-6596/2710/1/012016.

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Abstract In this work, we present a study on the epitaxial growth of MoS2 on both sapphire and mica substrates using the Chemical Vapor Deposition (CVD) method. The research focuses on optimizing the growth conditions in order to achieve reproducible results and explore the potential of conventional and Van der Waals epitaxy for synthesizing nanolayers and nanoclusters of transition metal dichalcogenides. By carefully selecting appropriately oriented substrates and performing targeted surface modification, we successfully achieved the desired epitaxial growth. The properties of the obtained structures are thoroughly investigated, with emphasis on their potential applications. This research contributes to the development of scalable and high-quality Transition Metal Dichalcogenide (TMD) growth technique, opening prospects for practical applications in various fields.

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27

Bennett-Jackson, Andrew L., Matthias Falmbigl, Kanit Hantanasirisakul, Zongquan Gu, Dominic Imbrenda, Aleksandr V. Plokhikh, Alexandria Will-Cole, et al. "van der Waals epitaxy of highly (111)-oriented BaTiO3 on MXene." Nanoscale 11, no. 2 (2019): 622–30. http://dx.doi.org/10.1039/c8nr07140c.

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28

Bolognesi, Margherita, Marco Brucale, Andrea Lorenzoni, Federico Prescimone, Salvatore Moschetto, Vladimir V. Korolkov, Matteo Baldoni, et al. "Epitaxial multilayers of alkanes on two-dimensional black phosphorus as passivating and electrically insulating nanostructures." Nanoscale 11, no. 37 (2019): 17252–61. http://dx.doi.org/10.1039/c9nr01155b.

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29

Yin, Yue, Fang Ren, Yunyu Wang, Zhiqiang Liu, Jinping Ao, Meng Liang, Tongbo Wei, et al. "Direct van der Waals Epitaxy of Crack-Free AlN Thin Film on Epitaxial WS2." Materials 11, no. 12 (December 4, 2018): 2464. http://dx.doi.org/10.3390/ma11122464.

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Van der Waals epitaxy (vdWE) has drawn continuous attention, as it is unlimited by lattice-mismatch between epitaxial layers and substrates. Previous reports on the vdWE of III-nitride thin film were mainly based on two-dimensional (2D) materials by plasma pretreatment or pre-doping of other hexagonal materials. However, it is still a huge challenge for single-crystalline thin film on 2D materials without any other extra treatment or interlayer. Here, we grew high-quality single-crystalline AlN thin film on sapphire substrate with an intrinsic WS2 overlayer (WS2/sapphire) by metal-organic chemical vapor deposition, which had surface roughness and defect density similar to that grown on conventional sapphire substrates. Moreover, an AlGaN-based deep ultraviolet light emitting diode structure on WS2/sapphire was demonstrated. The electroluminescence (EL) performance exhibited strong emissions with a single peak at 283 nm. The wavelength of the single peak only showed a faint peak-position shift with increasing current to 80 mA, which further indicated the high quality and low stress of the AlN thin film. This work provides a promising solution for further deep-ultraviolet (DUV) light emitting electrodes (LEDs) development on 2D materials, as well as other unconventional substrates.

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30

Felix, Jorlandio Francisco, Arlon Fernandes da Silva, Sebastião Willam da Silva, Fanyao Qu, Bin Qiu, Junfeng Ren, Walter Mendes de Azevedo, Mohamed Henini, and Chung-Che Huang. "A comprehensive study on the effects of gamma radiation on the physical properties of a two-dimensional WS2 monolayer semiconductor." Nanoscale Horizons 5, no. 2 (2020): 259–67. http://dx.doi.org/10.1039/c9nh00414a.

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This article reports the effects of gamma radiation on the structural, optical and magnetic properties of monolayer tungsten disulfide (WS₂) grown by a scalable van der Waals epitaxial (VdWE) process on a SiO₂ coated Si substrate.

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31

Susanto, Iwan, Chi-Yu Tsai, Yen-Teng Ho, Ping-Yu Tsai, and Ing-Song Yu. "Temperature Effect of van der Waals Epitaxial GaN Films on Pulse-Laser-Deposited 2D MoS2 Layer." Nanomaterials 11, no. 6 (May 26, 2021): 1406. http://dx.doi.org/10.3390/nano11061406.

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Van der Waals epitaxial GaN thin films on c-sapphire substrates with a sp2-bonded two-dimensional (2D) MoS2 buffer layer, prepared by pulse laser deposition, were investigated. Low temperature plasma-assisted molecular beam epitaxy (MBE) was successfully employed for the deposition of uniform and ~5 nm GaN thin films on layered 2D MoS2 at different substrate temperatures of 500, 600 and 700 °C, respectively. The surface morphology, surface chemical composition, crystal microstructure, and optical properties of the GaN thin films were identified experimentally by using both in situ and ex situ characterizations. During the MBE growth with a higher substrate temperature, the increased surface migration of atoms contributed to a better formation of the GaN/MoS2 heteroepitaxial structure. Therefore, the crystallinity and optical properties of GaN thin films can obviously be enhanced via the high temperature growth. Likewise, the surface morphology of GaN films can achieve a smoother and more stable chemical composition. Finally, due to the van der Waals bonding, the exfoliation of the heterostructure GaN/MoS2 can also be conducted and investigated by transmission electron microscopy. The largest granular structure with good crystallinity of the GaN thin films can be observed in the case of the high-temperature growth at 700 °C.

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32

Michałowski, Paweł Piotr, Piotr Caban, and Jacek Baranowski. "Secondary ion mass spectrometry investigation of carbon grain formation in boron nitride epitaxial layers with atomic depth resolution." Journal of Analytical Atomic Spectrometry 34, no. 5 (2019): 848–53. http://dx.doi.org/10.1039/c9ja00004f.

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33

Sun, Xin, Zonghuan Lu, Zhizhong Chen, Yiping Wang, Jian Shi, Morris Washington, and Toh-Ming Lu. "Single-Crystal Graphene-Directed van der Waals Epitaxial Resistive Switching." ACS Applied Materials & Interfaces 10, no. 7 (February 7, 2018): 6730–36. http://dx.doi.org/10.1021/acsami.7b18385.

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34

Susanto, Iwan, Hong-Shan Liu, Yen-Ten Ho, and Ing-Song Yu. "Epitaxial Growth of GaN Films on Chemical-Vapor-Deposited 2D MoS2 Layers by Plasma-Assisted Molecular Beam Epitaxy." Nanomaterials 14, no. 8 (April 22, 2024): 732. http://dx.doi.org/10.3390/nano14080732.

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The van der Waals epitaxy of wafer-scale GaN on 2D MoS2 and the integration of GaN/MoS2 heterostructures were investigated in this report. GaN films have been successfully grown on 2D MoS2 layers using three different Ga fluxes via a plasma-assisted molecular beam epitaxy (PA-MBE) system. The substrate for the growth was a few-layer 2D MoS2 deposited on sapphire using chemical vapor deposition (CVD). Three different Ga fluxes were provided by the gallium source of the K-cell at temperatures of 825, 875, and 925 °C, respectively. After the growth, RHEED, HR-XRD, and TEM were conducted to study the crystal structure of GaN films. The surface morphology was obtained using FE-SEM and AFM. Chemical composition was confirmed by XPS and EDS. Raman and PL spectra were carried out to investigate the optical properties of GaN films. According to the characterizations of GaN films, the van der Waals epitaxial growth mechanism of GaN films changed from 3D to 2D with the increase in Ga flux, provided by higher temperatures of the K-cell. GaN films grown at 750 °C for 3 h with a K-cell temperature of 925 °C demonstrated the greatest crystal quality, chemical composition, and optical properties. The heterostructure of 3D GaN on 2D MoS2 was integrated successfully using the low-temperature PA-MBE technique, which could be applied to novel electronics and optoelectronics.

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35

Ma, Shuo, Wenwu Pan, Xiao Sun, Zekai Zhang, Renjie Gu, Lorenzo Faraone, and Wen Lei. "Growth of Hg0.7Cd0.3Te on Van Der Waals Mica Substrates via Molecular Beam Epitaxy." Molecules 29, no. 16 (August 21, 2024): 3947. http://dx.doi.org/10.3390/molecules29163947.

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In this paper, we present a study on the direct growth of Hg0.7Cd0.3Te thin films on layered transparent van der Waals mica (001) substrates through weak interface interaction through molecular beam epitaxy. The preferred orientation for growing Hg0.7Cd0.3Te on mica (001) substrates is found to be the (111) orientation due to a better lattice match between the Hg0.7Cd0.3Te layer and the underlying mica substrate. The influence of growth parameters (mainly temperature and Hg flux) on the material quality of epitaxial Hg0.7Cd0.3Te thin films is studied, and the optimal growth temperature and Hg flux are found to be approximately 190 °C and 4.5 × 10−4 Torr as evidenced by higher crystalline quality and better surface morphology. Hg0.7Cd0.3Te thin films (3.5 µm thick) grown under these optimal growth conditions present a full width at half maximum of 345.6 arc sec for the X-ray diffraction rocking curve and a root-mean-square surface roughness of 6 nm. However, a significant number of microtwin defects are observed using cross-sectional transmission electron microscopy, which leads to a relatively high etch pit density (mid-107 cm−2) in the Hg0.7Cd0.3Te thin films. These findings not only facilitate the growth of HgCdTe on mica substrates for fabricating curved IR sensors but also contribute to a better understanding of growth of traditional zinc-blende semiconductors on layered substrates.

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36

Jing, Yumei, Shaoyun Huang, Kai Zhang, Jinxiong Wu, Yunfan Guo, Hailin Peng, Zhongfan Liu, and H. Q. Xu. "Weak antilocalization and electron–electron interaction in coupled multiple-channel transport in a Bi2Se3 thin film." Nanoscale 8, no. 4 (2016): 1879–85. http://dx.doi.org/10.1039/c5nr07296d.

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High crystalline quality topological insulator Bi₂Se₃ thin films are grown by van der Waals epitaxy on fluorophlogopite mica substrates and the excellent transport properties of the as-grown films are extracted from the magnetotransport measurements.

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37

Zhao, Chunsong, Humberto Batiz, Bengisu Yasar, Wenbo Ji, Mary C. Scott, Daryl C. Chrzan, and Ali Javey. "Orientated Growth of Ultrathin Tellurium by van der Waals Epitaxy." Advanced Materials Interfaces 9, no. 5 (January 7, 2022): 2101540. http://dx.doi.org/10.1002/admi.202101540.

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38

Mohanty, Dibyajyoti, Weiyu Xie, Yiping Wang, Zonghuan Lu, Jian Shi, Shengbai Zhang, Gwo-Ching Wang, Toh-Ming Lu, and Ishwara B. Bhat. "van der Waals epitaxy of CdTe thin film on graphene." Applied Physics Letters 109, no. 14 (October 3, 2016): 143109. http://dx.doi.org/10.1063/1.4964127.

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39

Dau, M. T., C. Vergnaud, M. Gay, C. J. Alvarez, A. Marty, C. Beigné, D. Jalabert, et al. "van der Waals epitaxy of Mn-doped MoSe2 on mica." APL Materials 7, no. 5 (May 2019): 051111. http://dx.doi.org/10.1063/1.5093384.

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40

Desrat, W., M. Moret, O. Briot, T.-H. Ngo, B. A. Piot, B. Jabakhanji, and B. Gil. "Superconducting Ga/GaSe layers grown by van der Waals epitaxy." Materials Research Express 5, no. 4 (April 11, 2018): 045901. http://dx.doi.org/10.1088/2053-1591/aab8c5.

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41

Saiki, Koichiro, Keiji Ueno, Toshihiro Shimada, and Atsushi Koma. "Application of Van der Waals epitaxy to highly heterogeneous systems." Journal of Crystal Growth 95, no. 1-4 (February 1989): 603–6. http://dx.doi.org/10.1016/0022-0248(89)90475-2.

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42

Schlaf, R., S. Tiefenbacher, O. Lang, C. Pettenkofer, and W. Jaegermann. "Van der Waals epitaxy of thin InSe films on MoTe2." Surface Science 303, no. 1-2 (February 1994): L343—L347. http://dx.doi.org/10.1016/0039-6028(94)90610-6.

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43

Zhu, Yue, Yong Zhou, Muhammad Iqbal Bakti Utama, María de la Mata, Yanyuan Zhao, Qing Zhang, Bo Peng, Cesar Magen, Jordi Arbiol, and Qihua Xiong. "Solution phase van der Waals epitaxy of ZnO wire arrays." Nanoscale 5, no. 16 (2013): 7242. http://dx.doi.org/10.1039/c3nr01984e.

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44

Ohuchi, F. S., T. Shimada, B. A. Parkinson, K. Ueno, and A. Koma. "Growth of MoSe2 thin films with Van der Waals epitaxy." Journal of Crystal Growth 111, no. 1-4 (May 1991): 1033–37. http://dx.doi.org/10.1016/0022-0248(91)91127-v.

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45

Hashimoto, Akihiro, Kohsuke Iwao, Satoru Tanaka, and Akio Yamamoto. "van der Waals epitaxy of solid C60 on graphene sheet." Diamond and Related Materials 17, no. 7-10 (July 2008): 1622–24. http://dx.doi.org/10.1016/j.diamond.2008.03.011.

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46

Saito, Yuta, Paul Fons, Alexander V. Kolobov, and Junji Tominaga. "Self‐organized van der Waals epitaxy of layered chalcogenide structures." physica status solidi (b) 252, no. 10 (August 11, 2015): 2151–58. http://dx.doi.org/10.1002/pssb.201552335.

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47

Zhao, Mei, Manman Liu, Youqing Dong, Chao Zou, Keqin Yang, Yun Yang, Lijie Zhang, and Shaoming Huang. "Epitaxial growth of two-dimensional SnSe2/MoS2 misfit heterostructures." Journal of Materials Chemistry C 4, no. 43 (2016): 10215–22. http://dx.doi.org/10.1039/c6tc03406c.

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van der Waals (vdWs) heterostructures, obtained by vertically stacking two-dimensional layered materials upon each other, appear particularly promising for future atomically thin electronic and optoelectronic devices and attract a great deal of attention due to their diverse functionalities.

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48

Bedoya-Pinto, Amilcar, Jing-Rong Ji, Avanindra K. Pandeya, Pierluigi Gargiani, Manuel Valvidares, Paolo Sessi, James M. Taylor, Florin Radu, Kai Chang, and Stuart S. P. Parkin. "Intrinsic 2D-XY ferromagnetism in a van der Waals monolayer." Science 374, no. 6567 (October 29, 2021): 616–20. http://dx.doi.org/10.1126/science.abd5146.

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Taking the measure of a magnet The recent discovery of magnetism in two-dimensional (2D) materials has inspired efforts to understand its nature. Whereas the magnetism of monolayers of chromium iodide (CrI 3 ) can be understood in terms of out-of-plane magnetic anisotropy, the related material chromium chloride (CrCl 3 ) has spins that lie in the plane. Bedoya-Pinto et al . used molecular beam epitaxy to grow monolayers of CrCl 3 on graphene and studied its magnetic properties. Using x-ray magnetic circular dichroism measurements, the authors found that monolayer CrCl 3 is a ferromagnet, unlike bulk CrCl 3 , which is antiferromagnetic. The scaling of the signal in the critical region indicated that the material belongs to the 2D-XY universality class, distinct from Ising magnetism, which some other 2D magnets exhibit. —JS

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49

Chen, Weijong, Zeyuan Sun, Zhongjie Wang, Lehua Gu, Xiaodong Xu, Shiwei Wu, and Chunlei Gao. "Direct observation of van der Waals stacking–dependent interlayer magnetism." Science 366, no. 6468 (November 21, 2019): 983–87. http://dx.doi.org/10.1126/science.aav1937.

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Controlling the crystal structure is a powerful approach for manipulating the fundamental properties of solids. In van der Waals materials, this control can be achieved by modifying the stacking order through rotation and translation between the layers. Here, we observed stacking-dependent interlayer magnetism in the two-dimensional (2D) magnetic semiconductor chromium tribromide (CrBr3), which was enabled by the successful growth of its monolayer and bilayer through molecular beam epitaxy. Using in situ spin-polarized scanning tunneling microscopy and spectroscopy, we directly correlate the atomic lattice structure with the observed magnetic order. Although the individual monolayer CrBr3 is ferromagnetic, the interlayer coupling in bilayer depends on the stacking order and can be either ferromagnetic or antiferromagnetic. Our observations pave the way for manipulating 2D magnetism with layer twist angle control.

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50

Min, Jung-Hong, Kuang-Hui Li, Yong-Hyeon Kim, Jung-Wook Min, Chun Hong Kang, Kyoung-Ho Kim, Jae-Seong Lee, et al. "Toward Large-Scale Ga2O3 Membranes via Quasi-Van Der Waals Epitaxy on Epitaxial Graphene Layers." ACS Applied Materials & Interfaces 13, no. 11 (March 12, 2021): 13410–18. http://dx.doi.org/10.1021/acsami.1c01042.

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