Статті в журналах з теми "Epitaxial Deposition"
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Wang, Wenliang, Yulin Zheng, Yuan Li, Xiaochan Li, Liegen Huang, Zhuoran Li, Zhenya Lu, and Guoqiang Li. "Control of interfacial reactions for the growth of high-quality AlN epitaxial films on Cu(111) substrates." CrystEngComm 19, no. 48 (2017): 7307–15. http://dx.doi.org/10.1039/c7ce01803g.
Повний текст джерелаMiller, Dean J., Jeffrey D. Hettinger, Ronald P. Chiarello, and Hyung K. Kim. "Epitaxial growth of Cu2O films on MgO by sputtering." Journal of Materials Research 7, no. 10 (October 1992): 2828–32. http://dx.doi.org/10.1557/jmr.1992.2828.
Повний текст джерелаDuan, Chun Yan, Bin Ai, Jian Jun Lai, Chao Liu, You Jun Deng, and Hui Shen. "APCVD Deposition of Si Film on SiO2 Patterned Si (111) Substrates for Solar Cells." Advanced Materials Research 295-297 (July 2011): 1211–16. http://dx.doi.org/10.4028/www.scientific.net/amr.295-297.1211.
Повний текст джерелаM C Ávila, Renan, Roney C da Silva, and Rogério J Prado. "Preparation of epitaxial BiFeO3 thin films on Si(001) substrates by pulsed electron deposition." Physics & Astronomy International Journal 7, no. 2 (April 3, 2023): 77–81. http://dx.doi.org/10.15406/paij.202307.00288.
Повний текст джерелаWijaranakula, W., P. M. Burke, L. Forbes, and J. H. Matlock. "Effect of pre- and postepitaxial deposition annealing on oxygen precipitation in silicon." Journal of Materials Research 1, no. 5 (October 1986): 698–704. http://dx.doi.org/10.1557/jmr.1986.0698.
Повний текст джерелаChung, Jun Ki, Won Jeong Kim, Sung Gap Lee, and Cheol Jin Kim. "Growth and Characterization of BaZrO3 Buffer Layer for Textured YBCO Thin Films Growth on MgO (00l) Substrate." Key Engineering Materials 336-338 (April 2007): 715–18. http://dx.doi.org/10.4028/www.scientific.net/kem.336-338.715.
Повний текст джерелаZhang, Jiming, Gregory T. Stauf, Robin Gardiner, Peter Van Buskirk, and John Steinbeck. "Single molecular precursor metal-organic chemical vapor deposition of MgAl2O4 thin films." Journal of Materials Research 9, no. 6 (June 1994): 1333–36. http://dx.doi.org/10.1557/jmr.1994.1333.
Повний текст джерелаDuan, Ying Wen. "Epitaxial Pd-Doped LaFeO3 Films Grown on (100) SrTiO3 by Pulsed Laser Deposition." Advanced Materials Research 936 (June 2014): 282–86. http://dx.doi.org/10.4028/www.scientific.net/amr.936.282.
Повний текст джерелаLin, Yunhao, Meijuan Yang, Wenliang Wang, Zhiting Lin, and Guoqiang Li. "Quality-enhanced GaN epitaxial films on Si(111) substrates by in situ deposition of SiN on a three-dimensional GaN template." RSC Advances 6, no. 88 (2016): 84794–800. http://dx.doi.org/10.1039/c6ra16842f.
Повний текст джерелаLi, Chunling, Yanwei Liu, Yueliang Zhou, Zhenghao Chen, Hong Chen, and Yong Zhu. "Heteroepitaxial Growth of c-Axis-Oriented BaTiO3:Ce/YBa2Cu3O7-x Bilayer Structure on SrTiO3(100) by Pulsed Laser Deposition." Modern Physics Letters B 11, no. 02n03 (January 30, 1997): 73–79. http://dx.doi.org/10.1142/s0217984997000116.
Повний текст джерелаChrysler, M., J. C. Jiang, G. Lorkowski, E. I. Meletis, and J. H. Ngai. "Deposition-last lithographically defined epitaxial complex oxide devices on Si(100)." Journal of Vacuum Science & Technology A 40, no. 5 (September 2022): 052701. http://dx.doi.org/10.1116/6.0001939.
Повний текст джерелаLee, Sang B., and Taegwen Hwangbo. "Epitaxial growth with impurity dimer deposition." Physica A: Statistical Mechanics and its Applications 337, no. 3-4 (June 2004): 470–80. http://dx.doi.org/10.1016/j.physa.2004.02.003.
Повний текст джерелаMieno, Fumitake, Atsuhiro Tukune, Hiroshi Miyata, Atsuo Shimizu, and Yuji Furumura. "Spontaneous Polysilicon and Epitaxial Silicon Deposition." Journal of The Electrochemical Society 142, no. 5 (May 1, 1995): 1590–94. http://dx.doi.org/10.1149/1.2048618.
Повний текст джерелаVeneroni, Alessandro, Fabrizio Omarini, Davide Moscatelli, Maurizio Masi, Stefano Leone, Marco Mauceri, Giuseppe Pistone, and Giuseppe Abbondanza. "Modeling of epitaxial silicon carbide deposition." Journal of Crystal Growth 275, no. 1-2 (February 2005): e295-e300. http://dx.doi.org/10.1016/j.jcrysgro.2004.10.104.
Повний текст джерелаJiménez-Sáez, J. C., A. M. C. Pérez-Martín, and J. J. Jiménez-Rodríguez. "Influence of Energy and Temperature in Cluster Coalescence Induced by Deposition." Advances in Condensed Matter Physics 2012 (2012): 1–7. http://dx.doi.org/10.1155/2012/812463.
Повний текст джерелаArata, Yuta, Hiroyuki Nishinaka, Kazuki Shimazoe, and Masahiro Yoshimoto. "Epitaxial Growth of Bendable Cubic NiO and In2O3 Thin Films on Synthetic Mica for p- and n-type Wide-Bandgap Semiconductor Oxides." MRS Advances 5, no. 31-32 (2020): 1671–79. http://dx.doi.org/10.1557/adv.2020.85.
Повний текст джерелаKomatsu, Keiji, Pineda Marulanda David Alonso, Nozomi Kobayashi, Ikumi Toda, Shigeo Ohshio, Hiroyuki Muramatsu, and Hidetoshi Saitoh. "Epitaxial Growth of Magnesia Films on Single Crystalline Magnesia Substrates by Atmospheric-Pressure Chemical Vapor Deposition." Journal of Materials Science Research 5, no. 2 (January 31, 2016): 56. http://dx.doi.org/10.5539/jmsr.v5n2p56.
Повний текст джерелаOhnishi, T., B. T. Hang, X. Xu, M. Osada, and K. Takada. "Quality control of epitaxial LiCoO2 thin films grown by pulsed laser deposition." Journal of Materials Research 25, no. 10 (October 2010): 1886–89. http://dx.doi.org/10.1557/jmr.2010.0250.
Повний текст джерелаLIANG, M. H., X. XIE, and S. LI. "COMPUTER SIMULATION OF EPITAXIAL GROWTH OF SILICON ON Si (001) SURFACE." International Journal of Modern Physics B 16, no. 01n02 (January 20, 2002): 227–32. http://dx.doi.org/10.1142/s0217979202009688.
Повний текст джерелаTamaki, Jun, Gregory K. L. Goh, and Fred F. Lange. "Novel epitaxial growth of barium titanate thin films by electrodeposition." Journal of Materials Research 15, no. 12 (December 2000): 2583–86. http://dx.doi.org/10.1557/jmr.2000.0368.
Повний текст джерелаAlouach, H., and G. J. Mankey. "Epitaxial growth of copper nanowire arrays grown on H-terminated Si(110) using glancing-angle deposition." Journal of Materials Research 19, no. 12 (December 1, 2004): 3620–25. http://dx.doi.org/10.1557/jmr.2004.0465.
Повний текст джерелаMeinander, K., K. Nordlund, and J. Keinonen. "Size dependent epitaxial cluster deposition: The effect of deposition energy." Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 242, no. 1-2 (January 2006): 161–63. http://dx.doi.org/10.1016/j.nimb.2005.08.028.
Повний текст джерелаNECHACHE, R., C. HARNAGEA, A. RUEDIGER, F. ROSEI, and A. PIGNOLET. "EFFECT OF EPITAXIAL STRAIN ON THE STRUCTURAL AND FERROELECTRIC PROPERTIES OF Bi2FeCrO6 THIN FILMS." Functional Materials Letters 03, no. 01 (March 2010): 83–88. http://dx.doi.org/10.1142/s1793604710000981.
Повний текст джерелаKizuka, T., and N. Tanaka. "Cross-sectional time-resolved high-resolution electron microscopy of epitaxial growth of Au on MgO." Proceedings, annual meeting, Electron Microscopy Society of America 54 (August 11, 1996): 982–83. http://dx.doi.org/10.1017/s0424820100167378.
Повний текст джерелаTsuchiya, Tetsuo, Kais Daoudi, Tomohiko Nakajima, and Toshiya Kumagai. "Epitaxial Growth of LSMO Film Prepared by Excimer Laser-Assisted Metal Organic Deposition (ELAMOD)." Key Engineering Materials 388 (September 2008): 133–36. http://dx.doi.org/10.4028/www.scientific.net/kem.388.133.
Повний текст джерелаBinh, Nguyen Thanh, Vu Thi Bich, and Y. Segawa. "INVESTIGATION OF ZnO NANO STRUCTURES FABRICATED ON AL2O3 SUBSTRACTES BY MOCVD." ASEAN Journal on Science and Technology for Development 24, no. 1&2 (November 15, 2017): 171–76. http://dx.doi.org/10.29037/ajstd.204.
Повний текст джерелаBlaauw, C., C. Miner, B. Emmerstorfer, A. J. Springthorpe, and M. Gallant. "Metalorganic chemical-vapour-deposition growth and characterization of GaAs." Canadian Journal of Physics 63, no. 6 (June 1, 1985): 664–69. http://dx.doi.org/10.1139/p85-102.
Повний текст джерелаAhn, Kun Ho, Sunggi Baik, and Sang Sub Kim. "Change of growth orientation in Pt films epitaxially grown on MgO(001) substrates by sputtering." Journal of Materials Research 17, no. 9 (September 2002): 2334–38. http://dx.doi.org/10.1557/jmr.2002.0342.
Повний текст джерелаLe, Ha-Linh Thi, Fatme Jardali, and Holger Vach. "Deposition of hydrogenated silicon clusters for efficient epitaxial growth." Physical Chemistry Chemical Physics 20, no. 23 (2018): 15626–34. http://dx.doi.org/10.1039/c8cp00764k.
Повний текст джерелаResel, Roland, Markus Koini, Jiri Novak, Steven Berkebile, Georg Koller, and Michael Ramsey. "Epitaxial Order Driven by Surface Corrugation: Quinquephenyl Crystals on a Cu(110)-(2×1)O Surface." Crystals 9, no. 7 (July 22, 2019): 373. http://dx.doi.org/10.3390/cryst9070373.
Повний текст джерелаHanawa, T., N. Kikuchi, K. Nishio, K. Tonooka, R. Wang, and T. Mamiya. "Epitaxial Growth of (Na,K)NbO3 based materials on SrTiO3 by pulsed laser deposition." MRS Proceedings 1633 (2014): 19–24. http://dx.doi.org/10.1557/opl.2014.84.
Повний текст джерелаWang, Wenliang, Yulin Zheng, Xiuye Zhang, Yuan Li, Zhenya Lu, and Guoqiang Li. "Design and epitaxial growth of quality-enhanced crack-free GaN films on AlN/Al heterostructures and their nucleation mechanism." CrystEngComm 20, no. 5 (2018): 597–607. http://dx.doi.org/10.1039/c7ce01995e.
Повний текст джерелаBai, P., G.-R. Yang, L. You, T.-M. Lu, and D. B. Knorr. "Room-temperature epitaxy of Cu on Si(111) using partially ionized beam deposition." Journal of Materials Research 5, no. 5 (May 1990): 989–97. http://dx.doi.org/10.1557/jmr.1990.0989.
Повний текст джерелаShtepliuk, Ivan, Mikhail Vagin, and Rositsa Yakimova. "Electrochemical Deposition of Copper on Epitaxial Graphene." Applied Sciences 10, no. 4 (February 19, 2020): 1405. http://dx.doi.org/10.3390/app10041405.
Повний текст джерелаAgostinelli, John A., Gabriel H. Braunstein, and Thomas N. Blanton. "Epitaxial LiTaO3thin films by pulsed laser deposition." Applied Physics Letters 63, no. 2 (July 12, 1993): 123–25. http://dx.doi.org/10.1063/1.110374.
Повний текст джерелаSeo, Jikeun, Hye-Young Kim, and J.-S. Kim. "Effects of deposition dynamics on epitaxial growth." Journal of Physics: Condensed Matter 19, no. 48 (November 5, 2007): 486001. http://dx.doi.org/10.1088/0953-8984/19/48/486001.
Повний текст джерелаZou, Guifu, Haiyan Wang, Nathan Mara, Hongmei Luo, Nan Li, Zengfeng Di, Eve Bauer, et al. "Chemical Solution Deposition of Epitaxial Carbide Films." Journal of the American Chemical Society 132, no. 8 (March 3, 2010): 2516–17. http://dx.doi.org/10.1021/ja9102315.
Повний текст джерелаYamada, Isao. "Effects of Ionized Cluster Beam Bombardment on Epitaxial Metal Film Deposition on Silicon Substrates." MRS Proceedings 128 (1988). http://dx.doi.org/10.1557/proc-128-113.
Повний текст джерелаKawai, Masanori, Daisuke Kan, Seiichi Isojima, Hiroki Kurata, Seiji Isoda, Shigeru Kimura, Osami Sakata, and Yuichi Shimakawa. "Deposition Rate Effect on Critical Thickness of BaTiO3 Epitaxial Thin Film Grown on SrTiO3 (001)." MRS Proceedings 1034 (2007). http://dx.doi.org/10.1557/proc-1034-k10-04.
Повний текст джерелаPalmstrom, C. J., G. J. Galvin, S. A. Schwarz, B. C. De Cooman, and J. W. Mayer. "SOLID PHASE EPITAXIAL GROWTH OF Ge ON GaAs." MRS Proceedings 56 (1985). http://dx.doi.org/10.1557/proc-56-67.
Повний текст джерелаLu, P., S. He, F. X. Li, and Q. X. Jia. "Epitaxial and Conductive RuO2 Thin Films Grown on MgO and LaAlO3 by MOCVD." MRS Proceedings 541 (1998). http://dx.doi.org/10.1557/proc-541-147.
Повний текст джерелаHattori, Y., A. Mizoguchi, Y. Ogaki, and A. Nishimtjra. "Epitaxial Growth of Organic Nonlinear Optical Materials." MRS Proceedings 247 (1992). http://dx.doi.org/10.1557/proc-247-235.
Повний текст джерелаTeplin, Charles W., Matthew Page, Eugene Iwaniczko, Kim M. Jones, Robert M. Ready, Bobby M. To, Helio M. Moutinho, Qi M. Wang, and Howard M. Branz. "Roughness, impurities and strain in low-temperature epitaxial silicon films grown by tantalum filament hot-wire chemical vapor deposition." MRS Proceedings 910 (2006). http://dx.doi.org/10.1557/proc-0910-a15-01.
Повний текст джерелаRulder, R. A., G. G. Fountain, S. V. Hattangady, J. B. Posthill, and R. J. Markunas. "Development of Remote Plasma Enhanced Ohemical Vapor Deposition Processes Through the use of in Vacuo Electron Diffraction and Electron Spectroscopy." MRS Proceedings 165 (1989). http://dx.doi.org/10.1557/proc-165-151.
Повний текст джерелаLee, See-Hyung, T. W. Noh, and Jai-Hyung Lee. "Dependence of Electro-Optic Effects on the Orientations of Epitaxial LiNbO3 Films." MRS Proceedings 401 (1995). http://dx.doi.org/10.1557/proc-401-261.
Повний текст джерелаOberbeck, Lars, Thomas A. Wagner, and Ralf B. Bergmann. "Ion-Assisted Deposition of Silicon Epitaxial Films with High Deposition Rate Using Low Energy Silicon Ions." MRS Proceedings 609 (2000). http://dx.doi.org/10.1557/proc-609-a7.1.
Повний текст джерелаNashimoto, K., D. K. Fork, F. A. Ponce, and T. H. Geballe. "Epitaxial Growth of Ferroelectric Thin Films on GaAs with MgO Buffer Layers by Pulsed Laser Deposition." MRS Proceedings 243 (1991). http://dx.doi.org/10.1557/proc-243-495.
Повний текст джерелаMartin Smith, Paul, S. Lombardo, M. J. Uttormark, Stephen J. Cook, and Michael O. Thompson. "Laser Assisted E-Beam Epitaxial Growth of Si/Ge Alloys on Si." MRS Proceedings 202 (1990). http://dx.doi.org/10.1557/proc-202-603.
Повний текст джерелаMcEachernt, R. L., Dirk Laszig, and W. L. Brownt. "The Epitaxial Growth of Al on Hydrogen Terminated Si(100) Substrates with and Without Ion Bombardment." MRS Proceedings 260 (1992). http://dx.doi.org/10.1557/proc-260-953.
Повний текст джерелаHiguchi, Takamitsu, Koichi Morozumi, Setsuya Iwashita, Masaya Ishida, and Tatsuya Shimoda. "Fabrication of SrRuO3 Epitaxial Thin Films on YBa2Cu3Ox / CeO2 / YSZ - Buffered Si Substrates by Pulsed Laser Deposition." MRS Proceedings 786 (2003). http://dx.doi.org/10.1557/proc-786-e6.5.
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