Дисертації з теми "Epitaxial Deposition"
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Thelander, Erik. "Epitaxial Ge-Sb-Te Thin Films by Pulsed Laser Deposition." Doctoral thesis, Universitätsbibliothek Leipzig, 2015. http://nbn-resolving.de/urn:nbn:de:bsz:15-qucosa-164106.
Повний текст джерелаRyu, Yung-ryel. "Study of epitaxial ZnSe films synthesized by pulsed deposition /." free to MU campus, to others for purchase, 1998. http://wwwlib.umi.com/cr/mo/fullcit?p9901275.
Повний текст джерелаYe, Liang. "Rapid thermal CVD of epitaxial silicon from dichlorosilane source." Thesis, Queen's University Belfast, 1993. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.333849.
Повний текст джерелаWoo, Juhyun. "Growth of epitaxial zirconium carbide layers using pulsed laser deposition." [Gainesville, Fla.] : University of Florida, 2005. http://purl.fcla.edu/fcla/etd/UFE0013064.
Повний текст джерелаVasilic, Rastko. "Epitaxial growth by monolayer restricted galvanic displacement." Diss., Online access via UMI:, 2006.
Знайти повний текст джерелаStallcup, Richard E. "Scanning Tunneling Microscopy of Homo-Epitaxial Chemical Vapor Deposited Diamond (100) Films." Thesis, University of North Texas, 2000. https://digital.library.unt.edu/ark:/67531/metadc2446/.
Повний текст джерелаZaia, Gilberto Vitor. "Epitaxial growth of Si and 3C-SiC by chemical vapor deposition." [S.l. : s.n.], 2002. http://deposit.ddb.de/cgi-bin/dokserv?idn=966630424.
Повний текст джерелаNutariya, Jeerapat. "Epitaxial thin film growth of Pt assisted by underpotential deposition phenomena." Thesis, University of Bristol, 2013. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.616569.
Повний текст джерелаGower, Aaron E. (Aaron Elwood). "Integrated model-based run-to-run uniformity control for epitaxial silicon deposition." Thesis, Massachusetts Institute of Technology, 2001. http://hdl.handle.net/1721.1/16787.
Повний текст джерелаAlso available online at the MIT Theses Online homepage
Includes bibliographical references (p. 241-247).
This electronic version was submitted by the student author. The certified thesis is available in the Institute Archives and Special Collections.
Semiconductor fabrication facilities require an increasingly expensive and integrated set of processes. The bounds on efficiency and repeatability for each process step continue to tighten under the pressure of economic forces and product performance requirements. This thesis addresses these issues and describes the concept of an "Equipment Cell," which integrates sensors and data processing software around an individual piece of semiconductor equipment. Distributed object technology based on open standards is specified and utilized for software modules that analyze and improve semiconductor equipment processing capabilities. A testbed system for integrated, model-based, run-to-run control of epitaxial silicon (epi) film deposition is developed, incorporating a cluster tool with a single-wafer epi deposition chamber, an in-line epi film thickness measurement tool, and off-line thickness and resistivity measurement systems. Automated single-input-single-output, run-to-run control of epi thickness is first demonstrated. An advanced, multi-objective controller is then developed (using distributed object technology) to provide simultaneous epi thickness control on a run-to-run basis using the in-line sensor, as well as combined thickness and resistivity uniformity control on a lot-to-lot basis using off-line thickness and resistivity sensors.
(cont.) Control strategies are introduced for performing combined run-to-run and lot-to-lot control, based on the availability of measurements. Also discussed are issues involved with using multiple site measurements of multiple film characteristics, as well as the use of time-based inputs and rate-based models. Such techniques are widely applicable for many semiconductor processing steps.
by Aaron Elwood Gower-Hall.
Ph.D.
Yamaguchi, Iwao. "Preparation of epitaxial oxide films on sapphire substrates by metal organic deposition." 京都大学 (Kyoto University), 2009. http://hdl.handle.net/2433/124565.
Повний текст джерелаMcClure, Adam Marc. "Epitaxial thin film deposition of magnetostrictive materials and its effect on magnetic anisotropy." Diss., Montana State University, 2012. http://etd.lib.montana.edu/etd/2012/mcclure/McClureA0512.pdf.
Повний текст джерелаShibahara, Kentaro. "EPITAXIAL GROWTH OF SiC BY CHEMICAL VAPOR DEPOSITION AND APPLICATION TO ELECTRONIC DEVICES." Kyoto University, 1988. http://hdl.handle.net/2433/162216.
Повний текст джерелаWang, Chao-Hsiung. "The growth of thin film epitaxial oxide-metal heterostructures." Thesis, University of Cambridge, 1998. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.368667.
Повний текст джерелаVankova, Viera. "Metalorganic vapour phase epitaxial growth and characterisation of Sb-based semiconductors." Thesis, Nelson Mandela Metropolitan University, 2005. http://hdl.handle.net/10948/d1019678.
Повний текст джерелаBouilly, Guillaume Jacques. "Synthesis and characterization of transition metal oxides and oxyhydrides using epitaxial thin films deposition." 京都大学 (Kyoto University), 2015. http://hdl.handle.net/2433/200450.
Повний текст джерелаPatchett, David. "Germanium-tin-silicon epitaxial structures grown on silicon by reduced pressure chemical vapour deposition." Thesis, University of Warwick, 2016. http://wrap.warwick.ac.uk/93459/.
Повний текст джерелаChang, Bertha Pi-Ju. "Deposition and planarization of epitaxial oxide thin films for high temperature superconducting device applications." Thesis, Massachusetts Institute of Technology, 1995. http://hdl.handle.net/1721.1/38087.
Повний текст джерелаBorovikov, Valery V. "Multi-scale Simulations of Thin-Film Metal Epitaxial Growth." University of Toledo / OhioLINK, 2008. http://rave.ohiolink.edu/etdc/view?acc_num=toledo1216928358.
Повний текст джерелаYan, Li. "Two phase magnetoelectric epitaxial composite thin films." Diss., Virginia Tech, 2009. http://hdl.handle.net/10919/30130.
Повний текст джерелаPh. D.
Swanson, Kyle. "Epitaxial growth of silicon carbide on on-axis silicon carbide substrates using methyltrichlorosilane chemical vapor deposition." Thesis, Manhattan, Kan. : Kansas State University, 2008. http://hdl.handle.net/2097/719.
Повний текст джерелаLee, Sam-Dong. "Crystalline properties of gallium oxide thin films epitaxially grown by mist chemical vapor deposition." 京都大学 (Kyoto University), 2016. http://hdl.handle.net/2433/215547.
Повний текст джерелаHållstedt, Julius. "Integration of epitaxial SiGe(C) layers in advanced CMOS devices." Doctoral thesis, KTH, Mikroelektronik och tillämpad fysik, MAP, 2007. http://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-4498.
Повний текст джерелаQC 20100715
Souri, Maryam. "ELECTRONIC AND OPTICAL PROPERTIES OF METASTABLE EPITAXIAL THIN FILMS OF LAYERED IRIDATES." UKnowledge, 2018. https://uknowledge.uky.edu/physastron_etds/60.
Повний текст джерелаBurriel, López Mónica. "Epitaxial Thin Films of Lanthanum Nickel Oxides: Deposition by PI-MOCVD, Structural Characterization and High Temperature Transport Properties." Doctoral thesis, Universitat Autònoma de Barcelona, 2007. http://hdl.handle.net/10803/3246.
Повний текст джерелаEste trabajo consiste en el estudio, desde un punto de vista fundamental, de películas delgadas epitaxiales de La2NiO4+? orientadas a lo largo del eje c y crecidas por la técnica de deposición química en fase vapor de precursores organometálicos por inyección pulsada (PI-MOCVD) sobre diferentes sustratos, con el fin de adquirir una mejor comprensión de sus características microestructurales, su variación con la tensión y la influencia de la tensión en las propiedades de transporte a elevada temperatura. Además, el crecimiento epitaxial permite la medida de las propiedades de las películas de La2NiO4+? en dos direcciones perpendiculares, obteniendo una medida directa de la anisotropía del material.
El La2NiO4+? es el primer miembro (n = 1) de la familia Ruddlesden-Popper Lan+1NinO3n+1, en la que la estructura de cada miembro está formada por un número n de bloques perovskita LaNiO3 alternados entre bloques LaO tipo cloruro sódico. Asimismo se han intentado depositar películas orientadas a lo largo del eje c de los miembros n = 2, 3 e ?, y se ha estudiado la variación las propiedades de transporte a lo largo de la serie Lan+1NinO3n+1.
En la tesis se realiza una introducción a los conductores mixtos iónicos-electrónicos (MIEC) y a los cátodos para pilas de combustible de óxido sólido (SOFC), como una posible aplicación del material La2NiO4+?. Se describen las propiedades más importantes de la fase La2NiO4+?, y de los miembros n =2, 3 e ? de la familia Lan+1NinO3n+1, así como el estado del arte de la preparación de películas delgadas de estos materiales.
A continuación se describe la técnica de deposición química en fase vapor de precursores organometálicos por inyección pulsada (PI-MOCVD), acompañada de una descripción detallada de los parámetros de depósito seleccionados, y del equipo PI-MOCVD utilizado. También se describen las técnicas utilizadas en la caracterización de las películas delgadas de Lan+1NinO3n+1.
Posteriormente se describen los parámetros de depósito optimizados para la deposición de películas epitaxiales de La2NiO4+? y se realiza una caracterización estructural, morfológica y microestructural en función del espesor de las películas, del sustrato utilizado y de la temperatura. También se detalla y describe la conductividad total de películas epitaxiales de diferente espesor medida. Para éstas películas se han medido, además, las propiedades de intercambio y de difusión de oxígeno utilizando dos técnicas diferentes: la técnica de intercambio de isótopos y la técnica de relajación de la conductividad. Los resultados de estas medidas se discuten en función de la microestructura de las películas.
Por último, se ha completado el estudio describiendo los primeros resultados de deposición de otros miembros de la familia Ruddlesden-Popper. La evolución de las propiedades de transporte total de las películas delgadas de Lan+1NinO3n+1 se han relacionado con el número de láminas tipo perovskita n.
In the last years there has been a great interest in the study of the La2NiO4+? compound due to its mixed ionic-electronic properties, which make it suitable in electrochemical devices, such as cathode in Intermediate Temperature Solid Oxide Fuel Cells (IT-SOFC), permeation membranes or gas sensors. The La2NiO4+? phase structure is formed by perovskite-type LaNiO3 layers alternated with rocksalt-type LaO layers, in which hyperstoichiometric oxygen can be incorporated. This layered structure is responsible for the anisotropy in the La2NiO4+? properties, leading to electronic and ionic conductivity three orders of magnitude higher along the ab plane, in comparison with the c-axis direction.
This work is focused on the study, from a fundamental point of view, of epitaxial c-axis oriented La2NiO4+? thin films deposited by PI-MOCVD technique on different substrates, in order to achieve a better comprehension of the microstructural characteristics, their variation with strain and their influence in its high temperature transport properties. Moreover, the epitaxial growth of the films permits the measurement of the properties of the La2NiO4+? in two perpendicular directions, to have a direct inset of the anisotropy.
The La2NiO4+? phase is the n = 1 member of the Lan+1NinO3n+1 Ruddlesden-Popper family, in which the structure of each member is formed by a n number of perovskite layers alternated between rock-salt layers. We have also attempted to deposit c-axis oriented films of the n = 2, n = 3 and n = 1 members and studied the variation of the transport properties through the different members of the family.
First, Chapter 1 consists of an introduction to the mixed ionic-electronic conductors (MIEC) and to the solid oxide fuel cell (SOFC) cathodes, as a possible application of the La2NiO4+? material. The most remarkable properties of the La2NiO4+? phase, and of the n = 2, 3 and 1 members of the Lan+1NinO3n+1 family are analyzed, as well as the state of the art in the preparation of thin films of these materials.
In Chapter 2, the Metalorganic Chemical Vapor Deposition (MOCVD) technique is described, accompanied by a detailed description of the selected experimental deposition parameters and of the Pulsed Injection MOCVD equipment used. Chapter 3 summarizes all the techniques used for the Lan+1NinO3n+1 thin film characterization.
In Chapter 4, the optimized experimental parameters for the deposition of epitaxial La2NiO4+? thin films are described. Structural, morphological and microstructural characterization is performed as a function of film thickness, substrate used and temperature. Total conductivity of epitaxial layers is also described and discussed.
In Chapter 5 we have studied the oxygen exchange and transport of the La2NiO4+? thin films by two different techniques: the oxygen isotope exchange and the electrical conductivity relaxation. Results are discussed as a function of microstructure.
Finally, in Chapter 6, the study is completed describing the first results of the deposition of the other members of the Ruddlesden-Popper family. Evolution of the total conductivity properties of the Lan+1NinO3n+1 films has been related to the n number of perovskite layers.
Mc, Grath Oran F. K. "Structural and magnetic properties of epitaxial W/Fe/W and Gd/Fe films grown by pulsed laser deposition." Université Joseph Fourier (Grenoble), 1994. http://www.theses.fr/1994GRE10209.
Повний текст джерелаBurriel, López Mónica. "Epitaxial thin films of lanthanum nickel oxides deposition by PI-MOCVD, structural characterization and high temperature transport properties." Saarbrücken VDM Verlag Dr. Müller, 2007. http://d-nb.info/988631342/04.
Повний текст джерелаSoler, Bru Laia. "Liquid-assisted ultrafast growth of superconducting films derived from chemical solutions." Doctoral thesis, Universitat Autònoma de Barcelona, 2019. http://hdl.handle.net/10803/667208.
Повний текст джерелаThe widespread use of High Temperature Superconductors (HTS) into large scale applications is, in part, still limited by the high costs of coated conductors manufacturing. Aiming for a breakthrough to achieve high throughput, in this thesis we have developed a novel technique that combines the low cost benefits of Chemical Solution Deposition (CSD) with the very high growth rates of crystallization from liquid phases. It relies on the formation of a transient liquid derived from carboxylate solutions, taking advantage of the kinetic hindrances on crystallization to reach the equilibrium phase. In this dissertation, we first explain the basics of the process that leads to YBa2Cu3O7-δ crystallization assisted by a transient liquid and then we elaborate on the results of our investigation about this technique. The “proof-of-principle” of this new approximation viability has been achieved with the use of rapid thermal annealing furnaces, allowing heating rates up to 80ºC/s. The reactions involved in the process are observed with in situ measurements and microscopic analyses, among others. First, the pyrolysis of the Ba, Cu and Y propionates mixture at low temperatures (500ºC) is observed with in situ infrared spectroscopy. Then, time resolved X-ray diffraction with synchrotron light is used to reveal the reaction paths to convert the resulting BaCO3, CuO and Y2O3 to the final phase, as well as nucleation and growth of the YBa2Cu3O7-δ film from the transient liquid. To do so, the deposition step is performed with spin coating or Ink Jet printing methodologies. The solutions characteristics have been adapted to the deposition technique and correlated to the resulting film morphology. Then, several parameters have been investigated to control the rate limiting BaCO3, elimination reaction in order to avoid carbon retention in the final thick epitaxial films. Afterwards, the basic concepts for understanding the nucleation and growth mechanisms of YBCO with TLAG are set. With the aim of obtaining c-axis epitaxial YBa2Cu3O7-δ films, several strategies are presented to control the driving force for crystallization. The relevant parameters are solution composition, oxygen pressure, heating ramps and growth temperatures. Finally, the crystallization conditions are correlated to the resulting films microstructure and superconducting performances. Two different paths are presented to reach TLAG. A direct temperature raise at constant oxygen pressure (Temperature-route), or a two step process (pO2-route). For the latter, BaCO3 elimination is disentangled from YBa2Cu3O7-δ growth by a jump on pO2. Additionally, several challenges needed to be addressed depending on the route: liquid reactivity with the substrates due to its highly corrosive nature or improper wettability, are some of them. Finally, we have succeeded in obtaining highly epitaxial YBCO thin films of 90-500nm with very high superconducting performances (Tc 90-92K, Jc up to 5MA/cm2 at self-field and 77K), at growth rates up to 100nm/s, increased by a factor 100 from those reported with conventional CSD. This methodology could be applied to other materials.
Miya, Senzo Simo. "Atmospheric pressure metal-organic vapour phase epitaxial growth of InAs/GaSb strained layer superlattices." Thesis, Nelson Mandela Metropolitan University, 2013. http://hdl.handle.net/10948/d1020866.
Повний текст джерелаJ, Boeckl John. "Microstructural investigation of defects in epitaxial GaAs grown on mismatched Ge and SiGe/Si substrates." Connect to this title online, 2005. http://rave.ohiolink.edu/etdc/view?acc%5Fnum=osu1116498970.
Повний текст джерелаTitle from first page of PDF file. Document formatted into pages; contains xxii, 212 p.; also includes graphics. Includes bibliographical references (p. 203-212). Available online via OhioLINK's ETD Center
Smith, Matthew T. "Design And Development Of A Silicon Carbide Chemical Vapor Deposition Reactor." [Tampa, Fla.] : University of South Florida, 2003. http://purl.fcla.edu/fcla/etd/SFE0000145.
Повний текст джерелаJu, Wentao. "Experimental Investigation of the Epitaxial Lateral Overgrowth of Gallium Nitride and Simulation of Gallium Nitride Metalorganic Chemical Vapor Deposition Process." Ohio : Ohio University, 2003. http://www.ohiolink.edu/etd/view.cgi?ohiou1050589636.
Повний текст джерелаAouadi, Mohamed-Samir. "Sputter-deposition of epitaxial CdTe and PbTe layers plasma emission spectroscopy of the discharge and photoluminescence spectroscopy of the layers." Thesis, University of Ottawa (Canada), 1989. http://hdl.handle.net/10393/5530.
Повний текст джерелаYoo, Dongwon. "Growth and Characterization of III-Nitrides Materials System for Photonic and Electronic Devices by Metalorganic Chemical Vapor Deposition." Diss., Georgia Institute of Technology, 2007. http://hdl.handle.net/1853/16220.
Повний текст джерелаBoeckl, John J. "Microstructural investigation of defects in epitaxial GaAs grown on mismatched Ge and SiGe/Si substrates." The Ohio State University, 2005. http://rave.ohiolink.edu/etdc/view?acc_num=osu1116498970.
Повний текст джерелаGao, Yungeng. "Effect of fluid dynamics and reactor design on the epitaxial growth of gallium nitride on silicon substrate by metalorganic chemical vapor deposition." Ohio : Ohio University, 2000. http://www.ohiolink.edu/etd/view.cgi?ohiou1179171265.
Повний текст джерелаThelander, Erik [Verfasser], Bernd [Akademischer Betreuer] Rauschenbach, Bernd [Gutachter] Rauschenbach, and Hans-Ulrich [Gutachter] Krebs. "Epitaxial Ge-Sb-Te Thin Films by Pulsed Laser Deposition / Erik Thelander ; Gutachter: Bernd Rauschenbach, Hans-Ulrich Krebs ; Betreuer: Bernd Rauschenbach." Leipzig : Universitätsbibliothek Leipzig, 2015. http://d-nb.info/1239565011/34.
Повний текст джерелаKwon, Ah-Ram. "Epitaxial Nd-Fe-B films: Growth, texture, magnetism and the influence of mechanical elongation." Doctoral thesis, Saechsische Landesbibliothek- Staats- und Universitaetsbibliothek Dresden, 2010. http://nbn-resolving.de/urn:nbn:de:bsz:14-qucosa-23750.
Повний текст джерелаDiese Arbeit behandelt die Herstellung dünner epitaktischer Nd-Fe-B-Schichten mit gepulster Laserdeposition mit dem Ziel, gute hartmagnetische Eigenschaften zu erreichen. Diese Schichten sind außerdem für das Verständnis grundlegender magnetischer Eigenschaften geeignet. Die Kontrolle der Zusammensetzung ist notwendig, um die Phasenbildung und optimale hartmagnetische Eigenschaften zu erreichen. Nd-Fe-B-Schichten wurden auf einkristallinen MgO (001)-Substraten mit verschiedenen Buffern deponiert, um unterschiedliche Texturen und Oberflächenmorphologien einzustellen. Die glatten kontinuierlichen epitaktischen Schichten ermöglichen die Messung der Magnetisierung bei gleichzeitig angelegter mechanischer Spannung. Obwohl die Magnetostriktion bei Nd-Fe-B im Allgemeinen vernachlässigt werden kann, konnte an Nd-Fe-B-Schichten nach dem Aufbringen einer Dehnung auf ein flexibles Substrat eine deutliche inverse Magnetostriktion induziert werden. Die anisotrope Dehnung in der Schicht, die die Symmetrie in der Schichtebene bricht, beeinflusst die Öffnungswinkel bei der Spinreorientierung. Damit wurde unterhalb der Spinreorientierungstemperatur eine elliptische Verzerrung der Anisotropie in der Schichtebene erreicht, die Übergangstemperatur selbst änderte sich dagegen nicht signifikant
Maneshian, Mohammad Hassan. "The Influence of Ohmic Metals and Oxide Deposition on the Structure and Electrical Properties of Multilayer Epitaxial Graphene on Silicon Carbide Substrates." Thesis, University of North Texas, 2011. https://digital.library.unt.edu/ark:/67531/metadc68009/.
Повний текст джерелаKwon, Ah-Ram. "Epitaxial Nd-Fe-B films: Growth, texture, magnetism and the influence of mechanical elongation." Doctoral thesis, Technische Universität Dresden, 2008. https://tud.qucosa.de/id/qucosa%3A25084.
Повний текст джерелаDiese Arbeit behandelt die Herstellung dünner epitaktischer Nd-Fe-B-Schichten mit gepulster Laserdeposition mit dem Ziel, gute hartmagnetische Eigenschaften zu erreichen. Diese Schichten sind außerdem für das Verständnis grundlegender magnetischer Eigenschaften geeignet. Die Kontrolle der Zusammensetzung ist notwendig, um die Phasenbildung und optimale hartmagnetische Eigenschaften zu erreichen. Nd-Fe-B-Schichten wurden auf einkristallinen MgO (001)-Substraten mit verschiedenen Buffern deponiert, um unterschiedliche Texturen und Oberflächenmorphologien einzustellen. Die glatten kontinuierlichen epitaktischen Schichten ermöglichen die Messung der Magnetisierung bei gleichzeitig angelegter mechanischer Spannung. Obwohl die Magnetostriktion bei Nd-Fe-B im Allgemeinen vernachlässigt werden kann, konnte an Nd-Fe-B-Schichten nach dem Aufbringen einer Dehnung auf ein flexibles Substrat eine deutliche inverse Magnetostriktion induziert werden. Die anisotrope Dehnung in der Schicht, die die Symmetrie in der Schichtebene bricht, beeinflusst die Öffnungswinkel bei der Spinreorientierung. Damit wurde unterhalb der Spinreorientierungstemperatur eine elliptische Verzerrung der Anisotropie in der Schichtebene erreicht, die Übergangstemperatur selbst änderte sich dagegen nicht signifikant.
Wu, Kuan-Ting. "Layered Ruddlesden-Popper Lan+1NinO3n+1 (n = 1, 2 and 3) epitaxial films grown by pulsed laser deposition for potential fuel cell applications." Thesis, Imperial College London, 2014. http://hdl.handle.net/10044/1/23297.
Повний текст джерелаLyu, Jike. "Epitaxial Ferroelectric Thin Films on Si(001): strain tuning of BaTiO3 and stabilization of polar phase in Hf0.5Zr0.5O2." Doctoral thesis, Universitat Autònoma de Barcelona, 2019. http://hdl.handle.net/10803/667989.
Повний текст джерелаChoi, Suk. "Growth and characterization of III-nitride materials for high efficiency optoelectronic devices by metalorganic chemical vapor deposition." Diss., Georgia Institute of Technology, 2012. http://hdl.handle.net/1853/45823.
Повний текст джерелаMukherjee, Devajyoti. "Growth and Characterization of Epitaxial Thin Films and Multiferroic Heterostructures of Ferromagnetic and Ferroelectric Materials." Scholar Commons, 2010. http://scholarcommons.usf.edu/etd/3622.
Повний текст джерелаWeng, Xiaorong. "Epitaxial CoxNi1-x nanowires in SrTiO3 matrix : growth, structure and control of magnetic anisotropy." Electronic Thesis or Diss., Sorbonne université, 2019. http://www.theses.fr/2019SORUS418.
Повний текст джерелаThis thesis describes the study of self-assembled epitaxial ferromagnetic CoxNi1-x nanowires in SrTiO3 matrix. This system is grown by pulsed laser deposition. Taking advantage of the sequential deposition of wires and matrix, the diameter of nanowires is controlled in the 1.7-5.3 nm range. Due to the lattice mismatch between wires and matrix, nanowires are in tensile axial strain. The strain decreases with increasing diameter and is in the 2-4% range. Large strain is thus achieved in this vertically aligned nanocomposite structure. The total magnetic anisotropy of the nanowires reflects the competition of the magnetostatic and magnetoelastic anisotropies. The magnetostatic effect favors an easy magnetization axis along the wire axis. The magnetoelastic contribution introduced by the tensile strain depends on the magnetostriction constant and the strain. It is uniaxial, negative for Ni and positive for Co concentration of about 20% and above. Under a strain larger than 0.8%, the magnetoelastic anisotropy dominates in magnitude the magnetostatic one, leading the wire axis to be a hard magnetization axis for Ni. For CoNi alloy nanowires, the large strain reinforces the easy character of the wire axis. This results in the enhancement of the blocking temperature over room temperature, indicating the increased thermal stability of magnetization. A spectroscopic study of the spin and orbital magnetic moments evidences the fact that the anisotropy of the orbital moment can be correlated with the magnetoelastic anisotropy. The control of the magnetic anisotropy by the strain or the diameter is a good starting point for the construction of 3D nanomagnetic structures
Liu, Pei-Yi, and 劉佩宜. "Reactive Deposition of Epitaxial Cobalt Disilicide." Thesis, 2010. http://ndltd.ncl.edu.tw/handle/30953331759563804551.
Повний текст джерела國立清華大學
材料科學工程學系
98
The relatively small lattice mismatch (~ 1.2 %) between CoSi2 and Si and the similarity in crystal structure allow the possibility of growing epitaxial CoSi2 layer on Si. Therefore CoSi2 has a great advantage to be used in semiconductor technology. There are several reported methods in controlling the formation process of epitaxial CoSi2 on Si. And each method has various experimental factors to form different CoSi2 structures. In order to make a systematic understanding on the effect of each experimental factor on the growth of cobalt silicides, nominal thicknesses of cobalt, deposition rates and growth temperatures were changed separately in this thesis. The effect of nominal thickness of Co layers on the growth of the epitaxial CoSi2 islands using reactive deposition epitaxy was investigated. It was found that the nucleation density of CoSi2 and the average size of CoSi2 islands increase with increasing the nominal thickness of the Co layers from 0.3 nm to 0.5 nm. As the average size of CoSi2 islands increases, the distribution range of width and length of the CoSi2 islands become larger as well. In addition, CoSi2 islands containing both the A-type interfaces and the B-type interfaces coexisted and nucleated independently during growth. The number of B-type (twinned) interfaces is much greater than that of the A-type (untwinned) interfaces. It was found that, as the deposition rate increases (0.003 nm/sec – 0.005 nm/sec), the average length of CoSi2 islands is shorter but the distribution range of the width is the same. So the distribution range of width is independent on the deposition rate. Besides, the nucleation density of CoSi2 islands increases dramatically with increasing the deposition rate until it is close to the saturation. Moreover, the percentage of the B-type interfaces is higher with increasing deposition rate as well. It was found that, as the substrate temperature increased from 750 ℃ to 820 ℃, the average size and the aspect ratio of CoSi2 islands were larger and the nucleation density decreased.
Mei-ChingHuang and 黃美靜. "RF magnetron sputter deposition of BiCuSeO epitaxial films." Thesis, 2018. http://ndltd.ncl.edu.tw/handle/sxa5ep.
Повний текст джерела國立成功大學
材料科學及工程學系
106
In this study, we attempted to grow epitaxial BiCuSeO (BCSO) films on (110) and (001) SrTiO3 (STO) substrates as the bottom electrode for the growth of multiferroic BiFeO3 (BFO) films. In our previous attempts, BCSO films of two in-plane orientations were obtained owing to the rapid deposition rate. So, in this work, we used two methods to reduce the rate. One was placing a stainless steel mesh above the substrate in order to scatter the sputtered atoms. Another one was controlling shutter opening time to adjust deposition rate. The films grown with the mesh were mainly (001) orientated but contained some (110) orientation and yet the film surface was rough. The films grown with the shutter had a unique (001) texture when the substrate temperature was 400 C and the shutter opening and closing times were 1 and 30 seconds, respectively. High-resolution X-ray diffraction (HRXRD) confirmed that the (001) oriented films were in-plane aligned as well, i.e. the grown BCSO films were epitaxial. Although bulk BCSO had larger a/b axes than STO, HRXRD showed that the a/b axes of BCSO films were stretched rather than compressed. Similarly, the c-axis of films was slightly shortened instead of being elongated. This was probably related to oxygen deficiency in the films. Cross-sectional transmission electron microscopy confirmed the epitaxial relationship between BCSO film and STO substrate. The resistivity of films measured at room temperature was 2.02×10-2 Ohmcm, which was good enough as the electrode. It was found that (001) BCSO epitaxial films could also be grown on the (110) oriented STO substrates. The BCSO films on (110) STO could be grown at very high rate, but only at the substrate temperature of 500 C. The resistivity of the BCSO epitaxial films on (110) STO was higher (9.55×10-3 Ohmcm). Preliminary attempts were made to grow epitaxial BFO films on BCSO. Polycrystalline BFO films of a pure phase were obtained, but the epitaxial growth has yet to be achieved.
Thelander, Erik. "Epitaxial Ge-Sb-Te Thin Films by Pulsed Laser Deposition." Doctoral thesis, 2014. https://ul.qucosa.de/id/qucosa%3A13245.
Повний текст джерелаWang, Cheng-Kuo, and 王鎮國. "Process Optimization of CVD Epitaxial Deposition Using Modified Genetic Algorithms." Thesis, 1997. http://ndltd.ncl.edu.tw/handle/97649431188973815481.
Повний текст джерела國立交通大學
控制工程系
85
A vertical chemical vapor deposition process (CVD) optimization method using modified geneticalgorithms (MGA) has been proposed. Genetic algorithms (GA) are a computational optimization paradigm modeled after biological evolution concept. Strategies such as: elitist with ranking selection reproduction scheme and multiple points crossover are used to raise the search efficiency of the traditional GA. Self-adjusted operator probability not only helps to avoid premature but also define parameters automatically. Moreover, we integrate hybrid genetic operator, immigration operator, and heuristic fitness function to enhance its local fine tuning ability. In order to prove the improvement results, we initially optimize several highly nonlinear functions with MGA, then, with a well-defined fitness function, the optimization procedure has been successfully applied to the CVD process with various noise level. Through the optimal solution, we obtained the thickness in deposition layers which is more uniformly distributed over the wafers. These results demonstrate the superiority of the proposed optimization solution in comparison with other existing optimization algorithms.
Hsiang, Chen-chih, and 項承智. "Epitaxial growth of ZnO by microwave-assisted chemical bath deposition." Thesis, 2017. http://ndltd.ncl.edu.tw/handle/w9pmt8.
Повний текст джерела國立交通大學
材料科學與工程學系所
106
Microwave-assisted chemical bath deposition (MWCBD) is a newly developed method for rapid synthesis of single-crystalline ZnO nanorods. In this study, MWCBD was used to synthesize ZnO with high-quality epitaxial ZnO film, using hexahydrate zinc nitrate (Zn(NO3)2∙6H2O) as the Zn2+ source, hexamethylenetetramine (HMT, C6H12N4) as pH buffer, GaN/sapphire as the substrate with small lattice mismatch with ZnO, at temperature less than 100°C. Also, the effect of sodium citrate (Na3C6H5O7) as the capping agent on lateral growth of ZnO rod for continuous film formation has been explored based on the evolution of the measured aspect ratio of height-to-width in the microwave environment. Additionally, the effects of temperature, concentration, and time on pH change of aqueous solutions with precipitation of ZnO powders and during microwave heating were evaluated. When the heating temperature is increased, the color of the aqueous solution as seen from the visual appearance becomes more pure white as more precipitated ZnO powders were produced and the pH value decreases from 6.8 to about 5.5. Increasing the concentration of zinc nitrate precursor results in the higher quantity of ZnO powders and reduction of the pH value of the aqueous solution. In the study of ZnO epitaxy on GaN, scanning electron microscopy observations in top view and cross-section show that thin film of epitaxial ZnO in thickness of about 1 μm can be effectively grown on GaN/sapphire with MWCBD by adding sodium citrate to the solution to enhance the lateral growth of ZnO rods with coalescence. It is found that to reach an aspect ratio of height to width of 0.83, the concentration of sodium citrate is required to increase to 0.04 mM which can still have an average growth rate of ~ 1 m/h. The film quality as characterized by x-ray diffraction in –scan shows a full width at half maximum of the (0004) rocking curve in 860 arcsec, which is twice as high as substrate of GaN, whereas it is 1288 arcsec for (303 ̅2) FWHM slightly increased from 1078 arcsec for GaN, suggesting that ZnO film quality is mainly affected by screw dislocations formed in rod nucleation.
謝明燈. "Low temperature silicon epitaxial growth by plasma enhanced chemical vapor deposition." Thesis, 1993. http://ndltd.ncl.edu.tw/handle/52684092564705128377.
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