Добірка наукової літератури з теми "Epitaxial Deposition"
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Статті в журналах з теми "Epitaxial Deposition"
Wang, Wenliang, Yulin Zheng, Yuan Li, Xiaochan Li, Liegen Huang, Zhuoran Li, Zhenya Lu, and Guoqiang Li. "Control of interfacial reactions for the growth of high-quality AlN epitaxial films on Cu(111) substrates." CrystEngComm 19, no. 48 (2017): 7307–15. http://dx.doi.org/10.1039/c7ce01803g.
Повний текст джерелаMiller, Dean J., Jeffrey D. Hettinger, Ronald P. Chiarello, and Hyung K. Kim. "Epitaxial growth of Cu2O films on MgO by sputtering." Journal of Materials Research 7, no. 10 (October 1992): 2828–32. http://dx.doi.org/10.1557/jmr.1992.2828.
Повний текст джерелаDuan, Chun Yan, Bin Ai, Jian Jun Lai, Chao Liu, You Jun Deng, and Hui Shen. "APCVD Deposition of Si Film on SiO2 Patterned Si (111) Substrates for Solar Cells." Advanced Materials Research 295-297 (July 2011): 1211–16. http://dx.doi.org/10.4028/www.scientific.net/amr.295-297.1211.
Повний текст джерелаM C Ávila, Renan, Roney C da Silva, and Rogério J Prado. "Preparation of epitaxial BiFeO3 thin films on Si(001) substrates by pulsed electron deposition." Physics & Astronomy International Journal 7, no. 2 (April 3, 2023): 77–81. http://dx.doi.org/10.15406/paij.202307.00288.
Повний текст джерелаWijaranakula, W., P. M. Burke, L. Forbes, and J. H. Matlock. "Effect of pre- and postepitaxial deposition annealing on oxygen precipitation in silicon." Journal of Materials Research 1, no. 5 (October 1986): 698–704. http://dx.doi.org/10.1557/jmr.1986.0698.
Повний текст джерелаChung, Jun Ki, Won Jeong Kim, Sung Gap Lee, and Cheol Jin Kim. "Growth and Characterization of BaZrO3 Buffer Layer for Textured YBCO Thin Films Growth on MgO (00l) Substrate." Key Engineering Materials 336-338 (April 2007): 715–18. http://dx.doi.org/10.4028/www.scientific.net/kem.336-338.715.
Повний текст джерелаZhang, Jiming, Gregory T. Stauf, Robin Gardiner, Peter Van Buskirk, and John Steinbeck. "Single molecular precursor metal-organic chemical vapor deposition of MgAl2O4 thin films." Journal of Materials Research 9, no. 6 (June 1994): 1333–36. http://dx.doi.org/10.1557/jmr.1994.1333.
Повний текст джерелаDuan, Ying Wen. "Epitaxial Pd-Doped LaFeO3 Films Grown on (100) SrTiO3 by Pulsed Laser Deposition." Advanced Materials Research 936 (June 2014): 282–86. http://dx.doi.org/10.4028/www.scientific.net/amr.936.282.
Повний текст джерелаLin, Yunhao, Meijuan Yang, Wenliang Wang, Zhiting Lin, and Guoqiang Li. "Quality-enhanced GaN epitaxial films on Si(111) substrates by in situ deposition of SiN on a three-dimensional GaN template." RSC Advances 6, no. 88 (2016): 84794–800. http://dx.doi.org/10.1039/c6ra16842f.
Повний текст джерелаLi, Chunling, Yanwei Liu, Yueliang Zhou, Zhenghao Chen, Hong Chen, and Yong Zhu. "Heteroepitaxial Growth of c-Axis-Oriented BaTiO3:Ce/YBa2Cu3O7-x Bilayer Structure on SrTiO3(100) by Pulsed Laser Deposition." Modern Physics Letters B 11, no. 02n03 (January 30, 1997): 73–79. http://dx.doi.org/10.1142/s0217984997000116.
Повний текст джерелаДисертації з теми "Epitaxial Deposition"
Thelander, Erik. "Epitaxial Ge-Sb-Te Thin Films by Pulsed Laser Deposition." Doctoral thesis, Universitätsbibliothek Leipzig, 2015. http://nbn-resolving.de/urn:nbn:de:bsz:15-qucosa-164106.
Повний текст джерелаRyu, Yung-ryel. "Study of epitaxial ZnSe films synthesized by pulsed deposition /." free to MU campus, to others for purchase, 1998. http://wwwlib.umi.com/cr/mo/fullcit?p9901275.
Повний текст джерелаYe, Liang. "Rapid thermal CVD of epitaxial silicon from dichlorosilane source." Thesis, Queen's University Belfast, 1993. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.333849.
Повний текст джерелаWoo, Juhyun. "Growth of epitaxial zirconium carbide layers using pulsed laser deposition." [Gainesville, Fla.] : University of Florida, 2005. http://purl.fcla.edu/fcla/etd/UFE0013064.
Повний текст джерелаVasilic, Rastko. "Epitaxial growth by monolayer restricted galvanic displacement." Diss., Online access via UMI:, 2006.
Знайти повний текст джерелаStallcup, Richard E. "Scanning Tunneling Microscopy of Homo-Epitaxial Chemical Vapor Deposited Diamond (100) Films." Thesis, University of North Texas, 2000. https://digital.library.unt.edu/ark:/67531/metadc2446/.
Повний текст джерелаZaia, Gilberto Vitor. "Epitaxial growth of Si and 3C-SiC by chemical vapor deposition." [S.l. : s.n.], 2002. http://deposit.ddb.de/cgi-bin/dokserv?idn=966630424.
Повний текст джерелаNutariya, Jeerapat. "Epitaxial thin film growth of Pt assisted by underpotential deposition phenomena." Thesis, University of Bristol, 2013. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.616569.
Повний текст джерелаGower, Aaron E. (Aaron Elwood). "Integrated model-based run-to-run uniformity control for epitaxial silicon deposition." Thesis, Massachusetts Institute of Technology, 2001. http://hdl.handle.net/1721.1/16787.
Повний текст джерелаAlso available online at the MIT Theses Online homepage
Includes bibliographical references (p. 241-247).
This electronic version was submitted by the student author. The certified thesis is available in the Institute Archives and Special Collections.
Semiconductor fabrication facilities require an increasingly expensive and integrated set of processes. The bounds on efficiency and repeatability for each process step continue to tighten under the pressure of economic forces and product performance requirements. This thesis addresses these issues and describes the concept of an "Equipment Cell," which integrates sensors and data processing software around an individual piece of semiconductor equipment. Distributed object technology based on open standards is specified and utilized for software modules that analyze and improve semiconductor equipment processing capabilities. A testbed system for integrated, model-based, run-to-run control of epitaxial silicon (epi) film deposition is developed, incorporating a cluster tool with a single-wafer epi deposition chamber, an in-line epi film thickness measurement tool, and off-line thickness and resistivity measurement systems. Automated single-input-single-output, run-to-run control of epi thickness is first demonstrated. An advanced, multi-objective controller is then developed (using distributed object technology) to provide simultaneous epi thickness control on a run-to-run basis using the in-line sensor, as well as combined thickness and resistivity uniformity control on a lot-to-lot basis using off-line thickness and resistivity sensors.
(cont.) Control strategies are introduced for performing combined run-to-run and lot-to-lot control, based on the availability of measurements. Also discussed are issues involved with using multiple site measurements of multiple film characteristics, as well as the use of time-based inputs and rate-based models. Such techniques are widely applicable for many semiconductor processing steps.
by Aaron Elwood Gower-Hall.
Ph.D.
Yamaguchi, Iwao. "Preparation of epitaxial oxide films on sapphire substrates by metal organic deposition." 京都大学 (Kyoto University), 2009. http://hdl.handle.net/2433/124565.
Повний текст джерелаКниги з теми "Epitaxial Deposition"
J, Bachmann Klaus, and United States. National Aeronautics and Space Administration., eds. P-polarized reflectance spectroscopy: A high sensitive real-time monitoring technique to study surface kinetics under steady state epitaxial deposition conditions. [Washington, D.C: National Aeronautics and Space Administration, 1995.
Знайти повний текст джерелаJ, Bachmann Klaus, and United States. National Aeronautics and Space Administration., eds. P-polarized reflectance spectroscopy: A high sensitive real-time monitoring technique to study surface kinetics under steady state epitaxial deposition conditions. [Washington, D.C: National Aeronautics and Space Administration, 1995.
Знайти повний текст джерелаJ, Bachmann Klaus, and United States. National Aeronautics and Space Administration., eds. P-polarized reflectance spectroscopy: A high sensitive real-time monitoring technique to study surface kinetics under steady state epitaxial deposition conditions. [Washington, D.C: National Aeronautics and Space Administration, 1995.
Знайти повний текст джерелаIonized-cluster beam deposition and epitaxy. Park Ridge, N.J., U.S.A: Noyes Publications, 1988.
Знайти повний текст джерелаThin-film deposition: Principles and practice. New York: McGraw-Hill, 1995.
Знайти повний текст джерелаFischer, Roland A. Precursor chemistry of advanced materials: CVD, ALD and nanoparticles. Berlin: Springer, 2010.
Знайти повний текст джерелаTexas Engineering Extension Service StaffTEEX. Epitaxial Deposition. TEEX/Technology and Economic Development, 2001.
Знайти повний текст джерелаThe 2006-2011 World Outlook for Thin-Layer Epitaxial Growth Deposition Semiconductor Wafer Processing Equipment. Icon Group International, Inc., 2005.
Знайти повний текст джерелаParker, Philip M. The 2007-2012 World Outlook for Thin-Layer Epitaxial Growth Deposition Semiconductor Wafer Processing Equipment. ICON Group International, Inc., 2006.
Знайти повний текст джерелаHogberg, Hans. Low-Temperature Deposition of Epitaxial Transition Metal Carbide Films and Superlattices Using C60 As Carbon Source. Uppsala Universitet, 1999.
Знайти повний текст джерелаЧастини книг з теми "Epitaxial Deposition"
Lange, Fred. "Epitaxial Films." In Chemical Solution Deposition of Functional Oxide Thin Films, 383–405. Vienna: Springer Vienna, 2013. http://dx.doi.org/10.1007/978-3-211-99311-8_16.
Повний текст джерелаCraciun, V., and R. K. Singh. "Ultraviolet-Assisted Pulsed Laser Deposition of Thin Oxide Films." In Atomistic Aspects of Epitaxial Growth, 511–24. Dordrecht: Springer Netherlands, 2002. http://dx.doi.org/10.1007/978-94-010-0391-9_40.
Повний текст джерелаSammelselg, V., J. Karlis, A. Kikas, J. Aarik, H. Mändar, and T. Uustare. "Nanoscopic Study of Zirconia Films Grown by Atomic Layer Deposition." In Atomistic Aspects of Epitaxial Growth, 583–91. Dordrecht: Springer Netherlands, 2002. http://dx.doi.org/10.1007/978-94-010-0391-9_46.
Повний текст джерелаNishino, S., K. Takahashi, Y. Kojima, and J. Saraie. "Epitaxial Growth of 6H-SiC by Chemical Vapor Deposition." In Springer Proceedings in Physics, 363–69. Berlin, Heidelberg: Springer Berlin Heidelberg, 1992. http://dx.doi.org/10.1007/978-3-642-84402-7_54.
Повний текст джерелаBhat, Ishwara B. "Epitaxial Growth of Silicon Carbide by Chemical Vapor Deposition." In Springer Handbook of Crystal Growth, 939–66. Berlin, Heidelberg: Springer Berlin Heidelberg, 2010. http://dx.doi.org/10.1007/978-3-540-74761-1_28.
Повний текст джерелаBoer, W. B. "Rapid Thermal Chemical Vapour Deposition of Epitaxial Si and SiGe." In Advances in Rapid Thermal and Integrated Processing, 443–63. Dordrecht: Springer Netherlands, 1996. http://dx.doi.org/10.1007/978-94-015-8711-2_16.
Повний текст джерелаPardo, J. A., J. Santiso, C. Solis, G. Garcia, and A. Figueras. "Pulsed Lased Deposition of MIEC Sr4Fe6O13±δ Epitaxial Thin Films." In Mixed Ionic Electronic Conducting Perovskites for Advanced Energy Systems, 265–72. Dordrecht: Springer Netherlands, 2004. http://dx.doi.org/10.1007/978-1-4020-2349-1_25.
Повний текст джерелаArthur, John R. "Physical and Chemical Methods for Thin-Film Deposition and Epitaxial Growth." In Specimen Handling, Preparation, and Treatments in Surface Characterization, 239–93. Boston, MA: Springer US, 2002. http://dx.doi.org/10.1007/0-306-46913-8_8.
Повний текст джерелаPonczak, Brian H., James D. Oliver, Soon Cho, and Gary W. Rubloff. "In Situ Mass Spectrometry for Chemical Identification in SiC Epitaxial Deposition." In Materials Science Forum, 121–24. Stafa: Trans Tech Publications Ltd., 2007. http://dx.doi.org/10.4028/0-87849-442-1.121.
Повний текст джерелаYamada, Isao. "Film Deposition with Cluster Beams: An Alternate Path to Epitaxial, Crystalline Films." In Physics and Chemistry of Finite Systems: From Clusters to Crystals, 1193–202. Dordrecht: Springer Netherlands, 1992. http://dx.doi.org/10.1007/978-94-017-2645-0_164.
Повний текст джерелаТези доповідей конференцій з теми "Epitaxial Deposition"
Wang, Zhan Jie, Li Jun Yan, Hiroyuki Kokawa, and Ryutaro Maeda. "In situ deposition of epitaxial PZT films by pulsed laser deposition." In Smart Materials, Nano-, and Micro-Smart Systems, edited by Alan R. Wilson. SPIE, 2004. http://dx.doi.org/10.1117/12.581399.
Повний текст джерелаMuenchausen, Ross E. "Pulsed laser deposition: prospects for commercial deposition of epitaxial thin films." In High-Power Laser Ablation, edited by Claude R. Phipps. SPIE, 1998. http://dx.doi.org/10.1117/12.321616.
Повний текст джерелаSusto, Gian Antonio, Alessandro Beghi, and Cristina De Luca. "A Predictive Maintenance System for Silicon Epitaxial Deposition." In 2011 IEEE International Conference on Automation Science and Engineering (CASE 2011). IEEE, 2011. http://dx.doi.org/10.1109/case.2011.6042421.
Повний текст джерелаYuehu Wang, Yuming Zhang, Yimen Zhang, Renxu Jia, and Da Chen. "SiC epitaxial layers grown by chemical vapor deposition." In 2008 8th International Workshop on Junction Technology (IWJT '08). IEEE, 2008. http://dx.doi.org/10.1109/iwjt.2008.4540053.
Повний текст джерелаYihwan Kim, Yi-Chiau Huang, Errol Sanchez, and Schubert Chu. "Thermal chemical vapor deposition of epitaxial germanium tin alloys." In 2014 7th International Silicon-Germanium Technology and Device Meeting (ISTDM). IEEE, 2014. http://dx.doi.org/10.1109/istdm.2014.6874699.
Повний текст джерелаDarwish, Abdalla, Simeon Wilson, and Brent Koplitz. "Pulsed laser deposition of epitaxial BaFeO 3 thin films." In SPIE Photonic Devices + Applications, edited by Shizhuo Yin and Ruyan Guo. SPIE, 2011. http://dx.doi.org/10.1117/12.914083.
Повний текст джерелаEden, J. G., V. Tavitian, and C. J. Kiely. "Epitaxial Semiconductor Films Grown By Laser Photochemical Vapor Deposition." In 1988 Los Angeles Symposium--O-E/LASE '88, edited by Peter P. Chenausky, Roland A. Sauerbrey, and James H. Tillotson. SPIE, 1988. http://dx.doi.org/10.1117/12.944386.
Повний текст джерелаAlexandrov, Dimiter, Jonny Tot, Robert Dubreuil, Francisco Miguel Morales, Jose Manuel Manuel, Juan Jesus Jimenez, Bertrand Lacroix, et al. "Low temperature epitaxial deposition of GaN on LTCC substrates." In 2017 IEEE 5th Workshop on Wide-Bandgap Power Devices and Applications (WiPDA). IEEE, 2017. http://dx.doi.org/10.1109/wipda.2017.8170501.
Повний текст джерелаSorokin, Michael V., Ishaq Ahmad, Anatole N. Khodan, and Samson O. Aisida. "Pulsed laser deposition of epitaxial films: : phase-field description." In 2022 19th International Bhurban Conference on Applied Sciences and Technology (IBCAST). IEEE, 2022. http://dx.doi.org/10.1109/ibcast54850.2022.9990074.
Повний текст джерелаWu, Sudong, Makoto Kambara, and Toyonobu Yoshida. "Enhanced Deposition Efficiency of Epitaxial Si Film from SiHCl3 by Mesoplasma Chemical Vapor Deposition." In Proceedings of the 12th Asia Pacific Physics Conference (APPC12). Journal of the Physical Society of Japan, 2014. http://dx.doi.org/10.7566/jpscp.1.015068.
Повний текст джерелаЗвіти організацій з теми "Epitaxial Deposition"
Hamblen, David G., David B. Fenner, Peter A. Rosenthal, Joseph Cosgrove, and Pang-Jen Kung. Epitaxial Growth of High Quality SiC of Pulsed Laser Deposition. Fort Belvoir, VA: Defense Technical Information Center, February 1995. http://dx.doi.org/10.21236/ada360082.
Повний текст джерелаTaga, N., M. Maekawa, Y. Shigesato, I. Yasui, and T. E. Haynes. Deposition of hetero-epitaxial In{sub 2}O{sub 3} thin films by molecular beam epitaxy. Office of Scientific and Technical Information (OSTI), May 1996. http://dx.doi.org/10.2172/257414.
Повний текст джерелаDavis, R. F., H. H. Lamb, I. S. Tsong, E. Bauer, and E. Chen. Selected Energy Epitaxial Deposition and Low Energy Electron Microscopy of AlN, GaN, and SiC Thin Films. Fort Belvoir, VA: Defense Technical Information Center, December 1997. http://dx.doi.org/10.21236/ada338206.
Повний текст джерелаDavis, R. F., H. H. Lamb, and S. T. Tsong. Selected Energy Epitaxial Deposition and Low Energy Electron Microscopy of AIN, GaN and SiC Thin Films. Fort Belvoir, VA: Defense Technical Information Center, June 1998. http://dx.doi.org/10.21236/ada353949.
Повний текст джерелаBailey, William. MBE Deposition of Epitaxial Fe1-xVx Films for Low-Loss Ghz Devices; Atomic-Scale Engineering of Magnetic Dynamics. Fort Belvoir, VA: Defense Technical Information Center, August 2006. http://dx.doi.org/10.21236/ada459301.
Повний текст джерелаNewman, A., P. S. Krishnaprasad, S. Ponczak, and P. Brabant. Modeling and Model Reduction for Control and Optimization of Epitaxial Growth in a Commercial Rapid Thermal Chemical Vapor Deposition Reactor. Fort Belvoir, VA: Defense Technical Information Center, January 1998. http://dx.doi.org/10.21236/ada441006.
Повний текст джерела