Статті в журналах з теми "Epigraphène"

Graphene growth by thermal decomposition of silicon carbide (SiC) is a technique that produces wafer-scale, single-orientation graphene on an insulating substrate. It is often referred to as epigraphene, and has been thought to be suitable for electronics applications. In particular, high-frequency devices for communication technology or large quantum Hall plateau for metrology applications using epigraphene are expected, which require high carrier mobility. However, the carrier mobility of as-grown epigraphene exhibit the relatively low values of about 1000 cm2/Vs. Fortunately, we can hope to improve this situation by controlling the electronic state of epigraphene by modifying the surface and interface structures. In this paper, the mobility of epigraphene and the factors that govern it will be described, followed by a discussion of attempts that have been made to improve mobility in this field. These understandings are of great importance for next-generation high-speed electronics using graphene.

We show that epitaxial graphene on silicon carbide (epigraphene) grown at high temperatures (T >1850 °C) readily acts as material for implementing solar-blind ultraviolet (UV) detectors with outstanding performance. We present centimeter-sized epigraphene metal–semiconductor–metal (MSM) detectors with a peak external quantum efficiency of η ∼ 85% for wavelengths λ = 250–280 nm, corresponding to nearly 100% internal quantum efficiency when accounting for reflection losses. Zero bias operation is possible in asymmetric devices, with the responsivity to UV remaining as high as R = 134 mA/W, making this a self-powered detector. The low dark currents Io ∼ 50 fA translate into an estimated record high specific detectivity D = 3.5 × 1015 Jones. The performance that we demonstrate, together with material reproducibility, renders epigraphene technologically attractive to implement high-performance planar MSM devices with a low processing effort, including multi-pixel UV sensor arrays, suitable for a number of practical applications.

This study substantiates the epigraphene formation theory on SiC, presenting it as freestanding graphene during thermal decomposition epitaxy. It was found that cool down process is responsible for the formation of the graphene buffer layer. Additionally the capping capabilities of the buffer layer have been evaluated using Raman spectroscopy and AFM measurements.

We measured a 2D peak line shape of epitaxial graphene grown on SiC in high vacuum, argon and graphene prepared by hydrogen intercalation from the so called buffer layer on a silicon face of SiC. We fitted the 2D peaks by Lorentzian and Voigt line shapes. The detailed analysis revealed that the Voigt line shape describes the 2D peak line shape better. We have determined the contribution of the homogeneous and inhomogeneous broadening. The homogeneous broadening is attributed to the intrinsic lifetime. Although the inhomogeneous broadening can be attributed to the spatial variations of the charge density, strain and overgrown graphene ribbons on the sub-micrometer length scales, we found dominant contribution of the strain fluctuations. The quasi free-standing graphene grown by hydrogen intercalation is shown to have the narrowest linewidth due to both homogeneous and inhomogeneous broadening.

The author tries to identify, based on epigraphic sources, and particularly on amphoric inscriptions, for Roman salted fish trade, following the same pattern as in the case of wine trade and oil trade, several families (whose members are consanguine or are placed under the authority of the same patron), implied, in one way or another, in the same type of business.

Model of energy diagram for the graphene monolayer (Gr) fabricated on magnetic transition metal (MTM) is proposed. Regimes of the strong and weak Gr-MTM coupling are discussed and corresponding analytical expressions for the substrate induced magnetization of epigraphene are obtained. It is shown that in the case of strong coupling the main contribution in magnetization are given by the quasi-local state which leads to the antiferromagnetic Gr-MTM bond, while in the case of weak coupling the main contribution in magnetization are given by the MTM d-band which leads to the ferromagnetic Gr-MTM bond. Numerical estimates for the Gr/Ni(111) and Gr/Co(poly) heterostructures are fulfilled and compared with the experimental data for Gr/Ni(111) and numerical calculations for Gr/Co/Ni(111). In the first case we have obtained the quantitative agreement, in the second case only the qualitative correspondence is achieved.

Current electronics technology increasingly demands higher integration, flexibility, higher efficiency, and performance aspects such as compatibility with higher temperature operation of the semiconductor devices, which may find limitations when silicon is used. The superior intrinsic properties of SiC, eventually combined with the ability of growing monolithically epitaxial, high quality graphene on a SiC wafer (1), makes it a reliable alternative for some electronic applications, such as field effect transistors (FET), radio frequency (RF) power amplifiers, integrated circuits (IC), or sensors. In this work, we describe the fabrication and preliminary electrical characterizations of epitaxial graphene (EG) on a SiC substrate FET devices based on an alternative back gate architecture. We propose a new approach in which the FET device is built on a 4◦ off-axis cut, N+ doped 4H-SiC substrate (the back gate) with, on top of, it a 1μm semi-insulating homoepitaxial layer of SiC compensated with vanadium (the dielectric layer). EG will be used as FET conduction channel. Using this V-compensated dielectric layer is aimed to minimize effects on the FET characteristics such as from defects in the SiC crystal, especially below the FET active areas, which would have occurred when using ion implantation to create a buried gate. The EG film was grown by the high temperature Si sublimation method under an Ar ambient. Raman spectroscopy, Atomic Force Microscopy (AFM) and Scanning Electron Microscopy (SEM) were applied in the structural characterization of epigraphene. The lack of D-peak in Raman spectra, together with SEM and AFM images, indicate that high quality monolayer to few layer epitaxial graphene fully covering the SiC surface is deposited. The electrical characteristics of the EG channel-devices and the functionality of the bottom gate were examined with 2-probe and 4-probe method. The electrical properties of the FET devices were also investigated with 3 terminal configuration.

Agitur de studioso commentario omnium normarum singillatim, ex primo epigraphe usque ad finalem aprobationem pontificiam, qua concluditur Instructio Dispensationis matrimonii. Documentorum superiorum super normis hac in re de processu dispensationis in matrimonio rato et non consummato utHitas atque necessitas memoratur ponderaturque Novas facultates episcopis concessis singulatim explicat et quantum importet quod instructor nunquam obliviscatur in transmissione thema probandum, Le non consummationem et causam ad dispensationem concedendam Specialiter examinat practicas quaestiones processuales, quae referuntur ad instantiam petitionis dispensationis; ad actus anteprocessuales exequendos; ad possibilem optionem inter iudicialem processum vel administrativum de rato; ad tramittationem peculiarem in transmissione iudicii nullitatis matrimonii in processu dispensationis de rato. Emendationes examinantur atque valorantur innovationesque introductae in instructione causae, in episcopi facultatibus in subdelegando in aliquo tribunali idoneo extra propriam dioecesim, in probatione testium, in morali et phosico argumento. Super redactione actarum et usu magnetophoni exponit formalitates actae phonographicae et proponit actuale problema de probatione phonographica. In occasione novi officii consiliariorum vel peritorum suscitat interrogationes atque responsiones de variis quaestionibus practicis quae possunt surgere circa hanc partem processus, cuius figura iuridica, facultates et munera determinadae sunt Explicat quod ad observationes Defensoris vinculi et ad suffragia tribunalis ac episcopi attinet. Glossat normas de usu linguarum vernacularum, de redactione ac ordine actorum fasciculi et eius missione in S. Congregationem Sacramentorum. Denique quod attinet ad rescriptum et clausulas prohibitorias, praesertim quas nominant ad mentem et vetito, commentat. Studium facit practicum de remotione clausulae prohibitoriae quantum ad celebrationem novarum nuptiarum et concludit valorando vim iuridicam Instructionis excelsae cum aprobatione et ratificatione Summi Pontificis.

La institución romana del domicilium convierte al sujeto en residente. Suele designar el lugar de residencia prolongada del incola o habitante que ha emigrado a una comunidad, por contraposición al municeps; por lo tanto, es un vínculo jurídico entre la ciudad y la persona que ha emigrado a ella. Frente a la expresión de la origo en los textos epigráficos, que es muy abundante, la manifestación del domicilo solo se hace de forma excepcional, en atención al escaso número de referencias conservadas, y su enunciación es muy similar a la que marca el origen. Palabras clave: domicilium, origo, ciudadano, epigrafía, latina.Topónimos: Imperio Romano.Periodo: Principado (27 a. C. – 284 d. C.) ABSTRACTThe Roman institution of the domicilium turns the subject into a resident. It usually designates the place of prolonged residence of the incola or inhabitant who has emigrated to a community, as opposed to the municeps. 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We report the lowest recorded levels of 1/f noise for graphene-based devices, at the level of SV/V2=SI/I2=4.4×10−16 (1/Hz), measured at f = 10 Hz (SV/V2=SI/I2 < 10−16 1/Hz for f > 100 Hz) in large-area epitaxial graphene on silicon carbide (epigraphene) Hall sensors. This performance is made possible through the combination of high material quality, low contact resistance achieved by edge contact fabrication process, homogeneous doping, and stable passivation of the graphene layer. Our study explores the nature of 1/f noise as a function of carrier density and device geometry and includes data from Hall sensors with device area range spanning over six orders of magnitude, with characteristic device length ranging from L = 1 μm to 1 mm. In optimized graphene Hall sensors, we demonstrate arrays to be a viable route to improve further the magnetic field detection: a simple parallel connection of two devices displays record-high magnetic field sensitivity at room temperature, with minimum detectable magnetic field levels down to Bmin = 9.5 nT/√Hz. The remarkable low levels of 1/f noise observed in epigraphene devices hold immense capacity for the design and fabrication of scalable epigraphene-based sensors with exceptional performance.

Abstract A theory is presented for the amplification of a surface acoustic wave (SAW) due to its interaction with conduction electrons in gate-controlled epitaxial graphene (epigraphene) on a SiC substrate. It is assumed that the SAW is launched onto the substrate in the direction of an external dc electric field applied to the graphene sample and causing the conduction electrons to drift at a speed greater than the speed of the SAW. The wavelength of the SAW is assumed to be shorter than the mean free path of the electrons, so that the quantum regime of interaction of those electrons with the SAW is realized. The Green's function method is used to calculate the SAW gain as a function of the electron concentration in epigraphene and the external dc electric field strength. It is shown that the substrate-induced band gap in the electronic spectrum of epigraphene leads to a significant (at least an order of magnitude) increase in the SAW gain as compared to the case of gapless graphene. In additional, the opening of the band gap results in a non-monotonic dependence of the SAW gain on the electron concentration, controlled by the gate voltage applied to the graphene sample. This dependence is characterized by the presence of a distinct maximum at a certain value of electron concentration (of about 2x1012 cm-2 for typical values of the other parameters involved), which distinguishes it from the monotonic concentration dependence of the SAW gain in gapless graphene.

AbstractGraphene’s original promise to succeed silicon faltered due to pervasive edge disorder in lithographically patterned deposited graphene and the lack of a new electronics paradigm. Here we demonstrate that the annealed edges in conventionally patterned graphene epitaxially grown on a silicon carbide substrate (epigraphene) are stabilized by the substrate and support a protected edge state. The edge state has a mean free path that is greater than 50 microns, 5000 times greater than the bulk states and involves a theoretically unexpected Majorana-like zero-energy non-degenerate quasiparticle that does not produce a Hall voltage. In seamless integrated structures, the edge state forms a zero-energy one-dimensional ballistic network with essentially dissipationless nodes at ribbon–ribbon junctions. Seamless device structures offer a variety of switching possibilities including quantum coherent devices at low temperatures. This makes epigraphene a technologically viable graphene nanoelectronics platform that has the potential to succeed silicon nanoelectronics.

Abstract In this work we investigate the long-term stability of epitaxial graphene (epigraphene) quantum Hall resistance standards, including single devices and an array device composed of 236 elements providing RK/236 ≈ 109 Ohm, with RK the von Klitzing constant. All devices utilize the established technique of chemical doping via molecular dopants to achieve homogenous doping and control over carrier density. However, optimal storage conditions and the long-term stability of molecular dopants for metrological applications have not been widely studied. In this work we aim to identify simple storage techniques that use readily available and cost-effective materials which provide long-term stability for devices without the need for advanced laboratory equipment. The devices are stored in glass bottles with four different environments: ambient, oxygen absorber, silica gel desiccant, and oxygen absorber/desiccant mixture. We have tracked the carrier densities, mobilities, and quantization accuracies of eight different epigraphene quantum Hall chips for over two years. We observe the highest stability (i.e. lowest change in carrier density) for samples stored in oxygen absorber/desiccant mixture, with a relative change in carrier density below 0.01 % per day and no discernable degradation of quantization accuracy at the part-per-billion level. This storage technique yields a comparable stability to the currently established best storage method of inert nitrogen atmosphere, but it is much easier to realize in practice. It is possible to further optimize the mixture of oxygen absorber/desiccant for even greater stability performance in the future. We foresee that this technique can allow for simple and stable long-term storage of polymer-encapsulated molecular doped epigraphene quantum Hall standards, removing another barrier for their wide-spread use in practical metrology.

AbstractGraphene quantum Hall effect (QHE) resistance standards have the potential to provide superior realizations of three key units in the new International System of Units (SI): the ohm, the ampere, and the kilogram (Kibble Balance). However, these prospects require different resistance values than practically achievable in single graphene devices (~12.9 kΩ), and they need bias currents two orders of magnitude higher than typical breakdown currents IC ~ 100 μA. Here we present experiments on quantization accuracy of a 236-element quantum Hall array (QHA), demonstrating RK/236 ≈ 109 Ω with 0.2 part-per-billion (nΩ/Ω) accuracy with IC ≥ 5 mA (~1 nΩ/Ω accuracy for IC = 8.5 mA), using epitaxial graphene on silicon carbide (epigraphene). The array accuracy, comparable to the most precise universality tests of QHE, together with the scalability and reliability of this approach, pave the road for wider use of graphene in the new SI and beyond.

In modern Greek the word [foreign font omitted] means exclusively “to have sexual contact”, and not “to marry”. In his work Opera Minora Selecta: Epigraphie et antiquité grecques (Amsterdam, 1989, V, 417-421) the epigraphist Louis Robert shows that this special meaning of the word has to be assumed in a number of classical texts. On the basis of Robert’s study, this article discusses whether this meaning is also possible in the case of a number of New Testament texts (Lk 14:20; 17:27; Mk 12:25) and texts from Enoch, Philo, Athenagoras and especially Clement.