Статті в журналах з теми "Enhancement Mode HEMTs"
Оформте джерело за APA, MLA, Chicago, Harvard та іншими стилями
Ознайомтеся з топ-50 статей у журналах для дослідження на тему "Enhancement Mode HEMTs".
Біля кожної праці в переліку літератури доступна кнопка «Додати до бібліографії». Скористайтеся нею – і ми автоматично оформимо бібліографічне посилання на обрану працю в потрібному вам стилі цитування: APA, MLA, «Гарвард», «Чикаго», «Ванкувер» тощо.
Також ви можете завантажити повний текст наукової публікації у форматі «.pdf» та прочитати онлайн анотацію до роботи, якщо відповідні параметри наявні в метаданих.
Переглядайте статті в журналах для різних дисциплін та оформлюйте правильно вашу бібліографію.
Wang, Chih Hao, Liang Yu Su, Finella Lee, and Jian Jang Huang. "Applications of GaN-Based High Electron Mobility Transistors in Large-Size Devices." Applied Mechanics and Materials 764-765 (May 2015): 486–90. http://dx.doi.org/10.4028/www.scientific.net/amm.764-765.486.
Повний текст джерелаSohn, Y. J., B. H. Lee, M. Y. Jeong, and Y. H. Jeong. "Enhancement mode Al0.25Ga0.75As/In0.2Ga0.8As nanowire HEMTs." Electronics Letters 37, no. 5 (2001): 322. http://dx.doi.org/10.1049/el:20010208.
Повний текст джерелаChvála, Aleš, Lukáš Nagy, Juraj Marek, Juraj Priesol, Daniel Donoval, Alexander Šatka, Michal Blaho, Dagmar Gregušová, and Ján Kuzmík. "Device and Circuit Models of Monolithic InAlN/GaN NAND and NOR Logic Cells Comprising D- and E-Mode HEMTs." Journal of Circuits, Systems and Computers 28, supp01 (December 1, 2019): 1940009. http://dx.doi.org/10.1142/s0218126619400097.
Повний текст джерелаZhong, Min, Ying Xi Niu, Hai Ying Cheng, Chen Xi Yan, Zhi Yuan Liu, and Dong Bo Song. "Advances for Enhanced GaN-Based HEMT Devices with p-GaN Gate." Materials Science Forum 1014 (November 2020): 75–85. http://dx.doi.org/10.4028/www.scientific.net/msf.1014.75.
Повний текст джерелаShuo Jia, Yong Cai, Deliang Wang, Baoshun Zhang, K. M. Lau, and K. J. Chen. "Enhancement-mode AlGaN/GaN HEMTs on silicon substrate." IEEE Transactions on Electron Devices 53, no. 6 (June 2006): 1474–77. http://dx.doi.org/10.1109/ted.2006.873881.
Повний текст джерелаJia, Shuo, Yong Cai, Deliang Wang, Baoshun Zhang, Kei May Lau, and Kevin J. Chen. "Enhancement-mode AlGaN/GaN HEMTs on silicon substrate." physica status solidi (c) 3, no. 6 (June 2006): 2368–72. http://dx.doi.org/10.1002/pssc.200565119.
Повний текст джерелаEisenbeiser, K., R. Droopad, and Jenn-Hwa Huang. "Metamorphic InAlAs/InGaAs enhancement mode HEMTs on GaAs substrates." IEEE Electron Device Letters 20, no. 10 (October 1999): 507–9. http://dx.doi.org/10.1109/55.791925.
Повний текст джерелаLee, Jaesun, Dongmin Liu, Zhaojun Lin, Wu Lu, Jeffrey S. Flynn, and George R. Brandes. "Quasi-enhancement mode AlGaN/GaN HEMTs on sapphire substrate." Solid-State Electronics 47, no. 11 (November 2003): 2081–84. http://dx.doi.org/10.1016/s0038-1101(03)00245-4.
Повний текст джерелаKumar, V., A. Kuliev, T. Tanaka, Y. Otoki, and I. Adesida. "High transconductance enhancement-mode AlGaN∕GaN HEMTs on SiC substrate." Electronics Letters 39, no. 24 (2003): 1758. http://dx.doi.org/10.1049/el:20031124.
Повний текст джерелаLiu, Shenghou, Yong Cai, Guodong Gu, Jinyan Wang, Chunhong Zeng, Wenhua Shi, Zhihong Feng, et al. "Enhancement-Mode Operation of Nanochannel Array (NCA) AlGaN/GaN HEMTs." IEEE Electron Device Letters 33, no. 3 (March 2012): 354–56. http://dx.doi.org/10.1109/led.2011.2179003.
Повний текст джерелаSi, Quan, Hao Yue, Ma Xiaohua, Xie Yuanbin, and Ma Jigang. "Enhancement-mode AlGaN/GaN HEMTs fabricated by fluorine plasma treatment." Journal of Semiconductors 30, no. 12 (December 2009): 124002. http://dx.doi.org/10.1088/1674-4926/30/12/124002.
Повний текст джерелаIto, M., S. Kishimoto, F. Nakamura, and T. Mizutani. "Enhancement-mode AlGaN/GaN HEMTs with thin InGaN cap layer." physica status solidi (c) 5, no. 6 (May 2008): 1929–31. http://dx.doi.org/10.1002/pssc.200778451.
Повний текст джерелаTsai, M.-K., S.-W. Tan, Y.-W. Wu, W.-S. Lour, and Y.-J. Yang. "Depletion-mode and enhancement-mode InGaP/GaAs -HEMTs for low supply-voltage applications." Semiconductor Science and Technology 17, no. 2 (January 11, 2002): 156–60. http://dx.doi.org/10.1088/0268-1242/17/2/312.
Повний текст джерелаChen, Chao, and Xing Zhao Liu. "Effects of Low-Energy Electron Irradiation on Enhancement-Mode AlGaN/GaN High-Electron-Mobility Transistors." Advanced Materials Research 774-776 (September 2013): 876–80. http://dx.doi.org/10.4028/www.scientific.net/amr.774-776.876.
Повний текст джерелаWan, Xin, Oliver K. Baker, Michael W. McCurdy, En Xia Zhang, Max Zafrani, Simon P. Wainwright, Jun Xu, et al. "Low Energy Proton Irradiation Effects on Commercial Enhancement Mode GaN HEMTs." IEEE Transactions on Nuclear Science 64, no. 1 (January 2017): 253–57. http://dx.doi.org/10.1109/tns.2016.2621065.
Повний текст джерелаLin, Yueh Chin, Yu Xiang Huang, Gung Ning Huang, Chia Hsun Wu, Jing Neng Yao, Chung Ming Chu, Shane Chang, et al. "Enhancement-Mode GaN MIS-HEMTs With LaHfOxGate Insulator for Power Application." IEEE Electron Device Letters 38, no. 8 (August 2017): 1101–4. http://dx.doi.org/10.1109/led.2017.2722002.
Повний текст джерелаChang, Li-Cheng, Cheng-Jia Dai, and Chao-Hsin Wu. "Threshold Voltage Modulation of Enhancement-Mode InGaAs Schottky-Gate Fin-HEMTs." IEEE Electron Device Letters 40, no. 4 (April 2019): 534–37. http://dx.doi.org/10.1109/led.2019.2902349.
Повний текст джерелаLu, Yunyou, Shu Yang, Qimeng Jiang, Zhikai Tang, Baikui Li, and Kevin J. Chen. "Characterization ofVT-instability in enhancement-mode Al2O3-AlGaN/GaN MIS-HEMTs." physica status solidi (c) 10, no. 11 (October 18, 2013): 1397–400. http://dx.doi.org/10.1002/pssc.201300270.
Повний текст джерелаKang, In-Ho, Jung-Hoon Kim, Won-Bae Kim, and Jong-In Song. "Selectively hydrogen-pretreated AlGaAs/InGaAs p-HEMTs and their application to an enhancement/depletion-mode HEMT." Solid-State Electronics 49, no. 1 (January 2005): 19–24. http://dx.doi.org/10.1016/j.sse.2004.07.006.
Повний текст джерелаLin, Wei-Tse, Wen-Chia Liao, Yi-Nan Zhong, and Yue-ming Hsin. "AlGaN/GaN HEMTs with 2DHG Back Gate Control." MRS Advances 3, no. 3 (December 26, 2017): 137–41. http://dx.doi.org/10.1557/adv.2017.619.
Повний текст джерелаZhen, Zixin, Chun Feng, Quan Wang, Di Niu, Xiaoliang Wang, and Manqing Tan. "Single Event Burnout Hardening of Enhancement Mode HEMTs With Double Field Plates." IEEE Transactions on Nuclear Science 68, no. 9 (September 2021): 2358–66. http://dx.doi.org/10.1109/tns.2021.3102980.
Повний текст джерелаLee, Chun-Hsun, Wei-Ren Lin, Yu-Hsuan Lee, and Jian-Jang Huang. "Characterizations of Enhancement-Mode Double Heterostructure GaN HEMTs With Gate Field Plates." IEEE Transactions on Electron Devices 65, no. 2 (February 2018): 488–92. http://dx.doi.org/10.1109/ted.2017.2786479.
Повний текст джерелаYong Cai, Yugang Zhou, K. J. Chen, and K. M. Lau. "High-performance enhancement-mode AlGaN/GaN HEMTs using fluoride-based plasma treatment." IEEE Electron Device Letters 26, no. 7 (July 2005): 435–37. http://dx.doi.org/10.1109/led.2005.851122.
Повний текст джерелаMahajan, A., M. Arafa, P. Fay, C. Caneau, and I. Adesida. "Enhancement-mode high electron mobility transistors (E-HEMTs) lattice-matched to InP." IEEE Transactions on Electron Devices 45, no. 12 (1998): 2422–29. http://dx.doi.org/10.1109/16.735718.
Повний текст джерелаChiu, Hsien-Chin, Chia-Hsuan Wu, Ji-Fan Chi, J. I. Chyi, and G. Y. Lee. "N2O treatment enhancement-mode InAlN/GaN HEMTs with HfZrO2 High-k insulator." Microelectronics Reliability 55, no. 1 (January 2015): 48–51. http://dx.doi.org/10.1016/j.microrel.2014.09.026.
Повний текст джерелаAbbate, C., G. Busatto, A. Sanseverino, D. Tedesco, and F. Velardi. "Failure mechanisms of enhancement mode GaN power HEMTs operated in short circuit." Microelectronics Reliability 100-101 (September 2019): 113454. http://dx.doi.org/10.1016/j.microrel.2019.113454.
Повний текст джерелаChan, Y. J., and M. T. Yang. "Enhancement and depletion-mode AlGaAs/In0.15Ga0.85As HEMTs fabricated by selective ion implantation." Electronics Letters 29, no. 25 (1993): 2220. http://dx.doi.org/10.1049/el:19931491.
Повний текст джерелаLei, Jianming, Yangyi Liu, Zhanmin Yang, Yalin Chen, Dunjun Chen, Liang Xu, and Jing Yu. "An Analytical Model of Dynamic Power Losses in eGaN HEMT Power Devices." Micromachines 14, no. 8 (August 18, 2023): 1633. http://dx.doi.org/10.3390/mi14081633.
Повний текст джерелаAnderson, Travis, Marko Tadjer, Michael Mastro, Jennifer Hite, Karl Hobart, Charles Eddy, and Fritz Kub. "Development of Enhancement Mode AlN/Ultrathin AlGaN/GaN HEMTs by Selective Wet Etching." ECS Transactions 28, no. 4 (December 17, 2019): 65–70. http://dx.doi.org/10.1149/1.3377101.
Повний текст джерелаDumka, D. C., H. Q. Tserng, M. Y. Kao, E. A. Beam, and P. Saunier. "High-performance double-recessed enhancement-mode metamorphic HEMTs on 4-in GaAs substrates." IEEE Electron Device Letters 24, no. 3 (March 2003): 135–37. http://dx.doi.org/10.1109/led.2003.809048.
Повний текст джерелаCAI, Y. "Enhancement-Mode AlGaN/GaN HEMTs with Low On-Resistance and Low Knee-Voltage." IEICE Transactions on Electronics E89-C, no. 7 (July 1, 2006): 1025–30. http://dx.doi.org/10.1093/ietele/e89-c.7.1025.
Повний текст джерелаLi, He, Xiao Li, Xiaodan Wang, Xintong Lyu, Haiwei Cai, Yazan M. Alsmadi, Liming Liu, Sandeep Bala, and Jin Wang. "Robustness of 650-V Enhancement-Mode GaN HEMTs Under Various Short-Circuit Conditions." IEEE Transactions on Industry Applications 55, no. 2 (March 2019): 1807–16. http://dx.doi.org/10.1109/tia.2018.2879289.
Повний текст джерелаAdak, Sarosij, Sanjit Kumar Swain, Hafizur Rahaman, and Chandan Kumar Sarkar. "Impact of gate engineering in enhancement mode n++GaN/InAlN/AlN/GaN HEMTs." Superlattices and Microstructures 100 (December 2016): 306–14. http://dx.doi.org/10.1016/j.spmi.2016.09.025.
Повний текст джерелаDong, Yan, Zili Xie, Dunjun Chen, Hai Lu, Rong Zhang, and Youdou Zheng. "Effects of dissipative substrate on the performances of enhancement mode AlInN/GaN HEMTs." International Journal of Numerical Modelling: Electronic Networks, Devices and Fields 32, no. 1 (August 31, 2018): e2482. http://dx.doi.org/10.1002/jnm.2482.
Повний текст джерелаGao, Tao, Ruimin Xu, Yuechan Kong, Jianjun Zhou, Kai Zhang, Cen Kong, Daqing Peng, and Tangsheng Chen. "Integrated enhancement/depletion-mode GaN MIS-HEMTs for high-speed mixed-signal applications." physica status solidi (a) 213, no. 5 (February 3, 2016): 1241–45. http://dx.doi.org/10.1002/pssa.201532805.
Повний текст джерелаBi, Lan, Yixu Yao, Qimeng Jiang, Sen Huang, Xinhua Wang, Hao Jin, Xinyue Dai, et al. "Instability of parasitic capacitance in T-shape-gate enhancement-mode AlGaN/GaN MIS-HEMTs." Journal of Semiconductors 43, no. 3 (March 1, 2022): 032801. http://dx.doi.org/10.1088/1674-4926/43/3/032801.
Повний текст джерелаМихайлович, С. В., А. Ю. Павлов, К. Н. Томош та Ю. В. Федоров. "Низкоэнергетическое бездефектное сухое травление барьерного слоя HEMT AlGaN/AlN/GaN". Письма в журнал технической физики 44, № 10 (2018): 61. http://dx.doi.org/10.21883/pjtf.2018.10.46100.17227.
Повний текст джерелаEfthymiou, Loizos, Gianluca Camuso, Giorgia Longobardi, Terry Chien, Max Chen, and Florin Udrea. "On the Source of Oscillatory Behaviour during Switching of Power Enhancement Mode GaN HEMTs." Energies 10, no. 3 (March 21, 2017): 407. http://dx.doi.org/10.3390/en10030407.
Повний текст джерелаChen, K. J., M. Yamamoto, K. Arai, K. Maezawa, and T. Enoki. "Improved source resistance in InP-based enhancement-mode HEMTs for high speed digital applications." Electronics Letters 31, no. 11 (May 25, 1995): 925–27. http://dx.doi.org/10.1049/el:19950603.
Повний текст джерелаMahajan, A., P. Fay, C. Caneau, and I. Adesida. "High performance enhancement mode high electron mobility transistors (E-HEMTs) lattice matched to InP." Electronics Letters 32, no. 11 (1996): 1037. http://dx.doi.org/10.1049/el:19960652.
Повний текст джерелаKwan, Alex Man Ho, and Kevin J. Chen. "A Gate Overdrive Protection Technique for Improved Reliability in AlGaN/GaN Enhancement-Mode HEMTs." IEEE Electron Device Letters 34, no. 1 (January 2013): 30–32. http://dx.doi.org/10.1109/led.2012.2224632.
Повний текст джерелаChen, C. H., C. W. Yang, H. C. Chiu, and Jeffrey S. Fu. "Characteristic comparison of AlGaN/GaN enhancement-mode HEMTs with CHF3 and CF4 surface treatment." Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena 30, no. 2 (March 2012): 021201. http://dx.doi.org/10.1116/1.3680115.
Повний текст джерелаJatal, Wael, Uwe Baumann, Heiko O. Jacobs, Frank Schwierz, and Jörg Pezoldt. "Enhancement- and depletion-mode AlGaN/GaN HEMTs on 3C-SiC(111)/Si(111) pseudosubstrates." physica status solidi (a) 214, no. 4 (February 24, 2017): 1600415. http://dx.doi.org/10.1002/pssa.201600415.
Повний текст джерелаLi, Z., K. Tang, T. P. Chow, M. Sugimoto, T. Uesugi, and T. Kachi. "Design and simulations of novel enhancement-mode high-voltage GaN vertical hybrid MOS-HEMTs." physica status solidi (c) 7, no. 7-8 (June 10, 2010): 1944–48. http://dx.doi.org/10.1002/pssc.200983460.
Повний текст джерелаNanjo, Takuma, Takashi Imazawa, Akira Kiyoi, Tetsuro Hayashida, Tatsuro Watahiki, and Naruhisa Miura. "Design and demonstration of EID MOS-HEMTs on Si substrate with normally depleted AlGaN/GaN epitaxial layer." Japanese Journal of Applied Physics 61, SC (February 9, 2022): SC1015. http://dx.doi.org/10.35848/1347-4065/ac3dca.
Повний текст джерелаWu, Tian-Li, Shun-Wei Tang, and Hong-Jia Jiang. "Investigation of Recessed Gate AlGaN/GaN MIS-HEMTs with Double AlGaN Barrier Designs toward an Enhancement-Mode Characteristic." Micromachines 11, no. 2 (February 3, 2020): 163. http://dx.doi.org/10.3390/mi11020163.
Повний текст джерелаChiu, Hsien-Chin, Chia-Hao Liu, Chong-Rong Huang, Chi-Chuan Chiu, Hsiang-Chun Wang, Hsuan-Ling Kao, Shinn-Yn Lin, and Feng-Tso Chien. "Normally-Off p-GaN Gated AlGaN/GaN MIS-HEMTs with ALD-Grown Al2O3/AlN Composite Gate Insulator." Membranes 11, no. 10 (September 23, 2021): 727. http://dx.doi.org/10.3390/membranes11100727.
Повний текст джерелаLu, Lucas, Guanliang Liu, and Kevin Bai. "Critical transient processes of enhancement-mode GaN HEMTs in high-efficiency and high-reliability applications." CES Transactions on Electrical Machines and Systems 1, no. 3 (September 2017): 283–91. http://dx.doi.org/10.23919/tems.2017.8086107.
Повний текст джерелаShen, Feiyu, Ronghui Hao, Liang Song, Fu Chen, Guohao Yu, Xiaodong Zhang, Yaming Fan, Fujiang Lin, Yong Cai, and Baoshun Zhang. "Enhancement mode AlGaN/GaN HEMTs by fluorine ion thermal diffusion with high V th stability." Applied Physics Express 12, no. 6 (May 14, 2019): 066501. http://dx.doi.org/10.7567/1882-0786/ab1cfa.
Повний текст джерелаLi, Yuan, Yuanfu Zhao, Alex Q. Huang, Liqi Zhang, Qingyun Huang, Ruiyang Yu, Soumik Sen, Qingxuan Ma, and Yunlong He. "Temperature‐dependent dynamic R DS,ON under different operating conditions in enhancement‐mode GaN HEMTs." IET Power Electronics 13, no. 3 (February 2020): 456–62. http://dx.doi.org/10.1049/iet-pel.2019.0540.
Повний текст джерела