Добірка наукової літератури з теми "Enhancement Mode HEMTs"
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Статті в журналах з теми "Enhancement Mode HEMTs"
Wang, Chih Hao, Liang Yu Su, Finella Lee, and Jian Jang Huang. "Applications of GaN-Based High Electron Mobility Transistors in Large-Size Devices." Applied Mechanics and Materials 764-765 (May 2015): 486–90. http://dx.doi.org/10.4028/www.scientific.net/amm.764-765.486.
Повний текст джерелаSohn, Y. J., B. H. Lee, M. Y. Jeong, and Y. H. Jeong. "Enhancement mode Al0.25Ga0.75As/In0.2Ga0.8As nanowire HEMTs." Electronics Letters 37, no. 5 (2001): 322. http://dx.doi.org/10.1049/el:20010208.
Повний текст джерелаChvála, Aleš, Lukáš Nagy, Juraj Marek, Juraj Priesol, Daniel Donoval, Alexander Šatka, Michal Blaho, Dagmar Gregušová, and Ján Kuzmík. "Device and Circuit Models of Monolithic InAlN/GaN NAND and NOR Logic Cells Comprising D- and E-Mode HEMTs." Journal of Circuits, Systems and Computers 28, supp01 (December 1, 2019): 1940009. http://dx.doi.org/10.1142/s0218126619400097.
Повний текст джерелаZhong, Min, Ying Xi Niu, Hai Ying Cheng, Chen Xi Yan, Zhi Yuan Liu, and Dong Bo Song. "Advances for Enhanced GaN-Based HEMT Devices with p-GaN Gate." Materials Science Forum 1014 (November 2020): 75–85. http://dx.doi.org/10.4028/www.scientific.net/msf.1014.75.
Повний текст джерелаShuo Jia, Yong Cai, Deliang Wang, Baoshun Zhang, K. M. Lau, and K. J. Chen. "Enhancement-mode AlGaN/GaN HEMTs on silicon substrate." IEEE Transactions on Electron Devices 53, no. 6 (June 2006): 1474–77. http://dx.doi.org/10.1109/ted.2006.873881.
Повний текст джерелаJia, Shuo, Yong Cai, Deliang Wang, Baoshun Zhang, Kei May Lau, and Kevin J. Chen. "Enhancement-mode AlGaN/GaN HEMTs on silicon substrate." physica status solidi (c) 3, no. 6 (June 2006): 2368–72. http://dx.doi.org/10.1002/pssc.200565119.
Повний текст джерелаEisenbeiser, K., R. Droopad, and Jenn-Hwa Huang. "Metamorphic InAlAs/InGaAs enhancement mode HEMTs on GaAs substrates." IEEE Electron Device Letters 20, no. 10 (October 1999): 507–9. http://dx.doi.org/10.1109/55.791925.
Повний текст джерелаLee, Jaesun, Dongmin Liu, Zhaojun Lin, Wu Lu, Jeffrey S. Flynn, and George R. Brandes. "Quasi-enhancement mode AlGaN/GaN HEMTs on sapphire substrate." Solid-State Electronics 47, no. 11 (November 2003): 2081–84. http://dx.doi.org/10.1016/s0038-1101(03)00245-4.
Повний текст джерелаKumar, V., A. Kuliev, T. Tanaka, Y. Otoki, and I. Adesida. "High transconductance enhancement-mode AlGaN∕GaN HEMTs on SiC substrate." Electronics Letters 39, no. 24 (2003): 1758. http://dx.doi.org/10.1049/el:20031124.
Повний текст джерелаLiu, Shenghou, Yong Cai, Guodong Gu, Jinyan Wang, Chunhong Zeng, Wenhua Shi, Zhihong Feng, et al. "Enhancement-Mode Operation of Nanochannel Array (NCA) AlGaN/GaN HEMTs." IEEE Electron Device Letters 33, no. 3 (March 2012): 354–56. http://dx.doi.org/10.1109/led.2011.2179003.
Повний текст джерелаДисертації з теми "Enhancement Mode HEMTs"
Wu, Yichao. "RF circuit applications of enhancement-mode AlGaN/GaN HEMTs /." View abstract or full-text, 2007. http://library.ust.hk/cgi/db/thesis.pl?ECED%202007%20WUY.
Повний текст джерелаSchuette, Michael L. "Advanced processing for scaled depletion and enhancement-mode AlGaN/GaN HEMTs." The Ohio State University, 2010. http://rave.ohiolink.edu/etdc/view?acc_num=osu1275524410.
Повний текст джерелаMacrelli, Elena. "Performance and Robustness of low-voltage enhancement-mode GaN-based power HEMTs with p-type gate." Master's thesis, Alma Mater Studiorum - Università di Bologna, 2021. http://amslaurea.unibo.it/24039/.
Повний текст джерелаNguyen, Thi Dak Ha. "Réalisation et caractérisation de HEMTs AlGaN/GaN sur silicium pour applications à haute tension." Phd thesis, Université Paris Sud - Paris XI, 2013. http://tel.archives-ouvertes.fr/tel-00934655.
Повний текст джерелаGreco, Giuseppe. "AlGaN/GaN heterostructures for enhancement mode transistors." Doctoral thesis, Università di Catania, 2013. http://hdl.handle.net/10761/1347.
Повний текст джерелаWang, Ruonan. "Enhancement/depletion-mode HEMT technology for III-nitride mixed-signal and RF applications /." View abstract or full-text, 2008. http://library.ust.hk/cgi/db/thesis.pl?ECED%202008%20WANG.
Повний текст джерелаYi, Congwen. "Reliability study of enhancement-mode AIGaN/GaN HEMT fabricated with fluorine plasma treatment technology /." View abstract or full-text, 2008. http://library.ust.hk/cgi/db/thesis.pl?ECED%202008%20YI.
Повний текст джерелаBarranger, Damien. "Développement de transistor AlGaN/GaN E-mode sur substrat silicium 200 mm compatible avec une salle blanche CMOS." Thesis, Lyon, 2017. http://www.theses.fr/2017LYSEI135.
Повний текст джерелаThis thesis focuses on the development of AlGaN/GaN heterojunction components or HEMT. This heterojunction has an excellent mobility (2000 cm² / V.s) thanks to the appearance of an electron gas in the GaN. However, the components made with this heterojunction are normally-on. For safety reasons particularly, normally-off components are required. There are many ways to make normally-off transistors based on AlGaN/GaN heterojunction. In this thesis we chose to study a MOSCHEMT strucutre. This structure is characterized by a MOS type gate and HEMT type accesses. The study shows the effects of technological parameters (epitaxy, process and component structure) on the electrical behaviour of the components. Another structure studied is the monolithic cascode, which can improve on-state performance of the MOSC-HEMT without damaging the characteristic in reverse of the components. The objective of this thesis is to design a normally-off component on silicon substrate 200 mm with a threshold voltage higher than 1V, able to hold 600 V in reverse, with a current rating between 10 A and 30 A and compatible in CMOS clean room. The manuscript has four chapters. Through a bibliographic review, the first chapter presents the different methods to obtain a normally-off transistor based on gallium nitride. This chapter presents and justifies the technological choice of CEA-LETI. The second chapter presents the models as well as the methods of characterizations used during the thesis. The third chapter deals with the results obtained by varying the manufacturing parameters on the MOSC-HEMTs. Finally, the fourth chapter shows a study on innovative cascode technology. This structure must make it possible to increase the breakdown voltage of the transistors without damaging the on state
Chao, Kuan-Hua, and 趙冠驊. "High Linearity Enhancement-Mode Double-Channel AlGaN/GaN HEMTs." Thesis, 2015. http://ndltd.ncl.edu.tw/handle/94888739604069885591.
Повний текст джерела國立雲林科技大學
電子工程系
103
The GaN material of III-V compounds has the excellent properties of material such as high breakdown voltage, high thermal conductivity, small permittivity and high cut-off frequency. It always has been operated in high power, high temperature and high frequency circuits because of the excellent characteristics of carrier transmission of AlGaN/GaN high electron mobility transistors (HEMTs). In the applications of communication transmission, linearity of device has effect in the degree of distortion of signal. Therefore, linearity is an important factor of device quality. However, in the condition of zero bias that two-dimensional electron gas (2DEG) always exists because of the own properties of AlGaN/GaN HEMTs. Therefore, we have to exert a negative bias to close the device because of the device is depletion-mode. It is a drawback in the applications of power electronic devices so the circuit design is more complicate. Therefore, for reducing the cost of circuit design and the wasting of resources that how to design the enhancement-mode GaN material transistor is an important issue. In this thesis, Sentaurus TCAD is used to simulate device characteristics of AlGaN/GaN HEMTs. First, we will introduce physical models and simulate the electrical characteristics of AlGaN/GaN HEMTs, in which the physical parameters will be calibrated so that the simulation results matches the measured data from a reference data. This process ensures the accuracy of the subsequent simulation work. Next, we will rebuilt our device in to a double-channel structure which’s basic design consult to a reference that has double AlGaN/GaN heterojunctions. After that we will compare the property of composite structure before we have a device which has a flat and wide transconductance peak after we modulate the variation and location of twin transconductance peaks of double-channel AlGaN/GaN HEMTs. The linearity is improved. Last, we use recessed-gate and changing the thick of material layer with partially p-type doping which’s location is under gate that make the depletion-mode device turning into enhancement-mode. Thus we successfully design an enhancement-mode double-channel AlGaN/GaN HEMT which has high linearity.
Chen, Jian-You, and 陳建佑. "Enhancement-Mode GaN Power HEMTs for High Frequency Applications." Thesis, 2018. http://ndltd.ncl.edu.tw/handle/e6kb36.
Повний текст джерела國立交通大學
材料科學與工程學系所
107
Enhancement-mode (E-mode) AlGaN/GaN high electron mobility transistors (HEMTs) have been widely studied in recent years. The gate recess is a common method to realize the E-mode operation because of the suppressions of short-channel effect and current collapse effect. The device performance of E-mode GaN HEMTs has traditionally been limited by low maximum drain current and high on-resistance because of the interface defect at the oxide/AlGaN interface. Therefore, we used the in-situ N2 plasma pre-treatment prior to the gate oxide deposition to improve the interface quality of oxide/AlGaN interface by removing surface native oxide and generating the nitridation inter-layer (NIL). The treated device can obtain a high maximum drain current density and a high transconductance. Besides, a thin-barrier AlGaN/GaN HEMT structure was conducted to provide a good recess uniformity and yield because the thin-barrier structure with a shallow etch depth is suitable for the etch control of the gate recess process. The gate-recessed thin-barrier E-mode AlGaN/GaN HEMT device with the N2 plasma pre-treatment exhibited superior electrical performances, including a maximum drain current density (IDS,max) of 1.068 A/mm, a peak extrinsic transconductance (gm) of 740 mS/mm, a threshold voltage (Vth) of 0.12 V, and a fT/fMAX of 45/110 GHz. At 38 GHz, a maximum output power (Pout) of 0.7 W/mm, a peak power-added efficiency (PAE) of 23.3 %, and a linear gain of 6.05 dB were obtained.
Частини книг з теми "Enhancement Mode HEMTs"
Alam, Shamshad, Mamta Khosla, Ashish Raman, and Ravi Ranjan. "Effects of Variation in Gate Material on Enhancement Mode P-GaN AlGaN/GaN HEMTs." In Nanoelectronics for Next-Generation Integrated Circuits, 137–46. Boca Raton: CRC Press, 2022. http://dx.doi.org/10.1201/9781003155751-8.
Повний текст джерелаSwain, Raghunandan, and Trupti Ranjan Lenka. "Enhancement-Mode MOSHEMT." In HEMT Technology and Applications, 129–37. Singapore: Springer Nature Singapore, 2022. http://dx.doi.org/10.1007/978-981-19-2165-0_10.
Повний текст джерелаChakraborty, Apurba, Saptarshi Ghosh, Ankush Bag, Palash Das, and Dhrubes Biswas. "Analytical Expression of Barrier Layer for Enhancement Mode AlGaN/GaN HEMT." In Physics of Semiconductor Devices, 175–77. Cham: Springer International Publishing, 2014. http://dx.doi.org/10.1007/978-3-319-03002-9_44.
Повний текст джерела"Enhancement-Mode GaN HEMTs and Integrated Circuits." In Nitride Wide Bandgap Semiconductor Material and Electronic Devices, 281–306. Taylor & Francis Group, 6000 Broken Sound Parkway NW, Suite 300, Boca Raton, FL 33487-2742: CRC Press, 2016. http://dx.doi.org/10.1201/9781315368856-13.
Повний текст джерелаHossain, Md Maruf, Md Maruf Hossain Shuvo, Twisha Titirsha, and Syed Kamrul Islam. "Modeling of Enhancement Mode HEMT with Π-Gate Optimization for High Power Applications." In Selected Topics in Electronics and Systems, 21–34. WORLD SCIENTIFIC, 2023. http://dx.doi.org/10.1142/9789811283765_0003.
Повний текст джерелаТези доповідей конференцій з теми "Enhancement Mode HEMTs"
Suh, C., A. Chini, Y. Fu, C. Poblenz, J. Speck, and U. Mishra. "p-GaN/AlGaN/GaN Enhancement-Mode HEMTs." In 2006 64th Device Research Conference. IEEE, 2006. http://dx.doi.org/10.1109/drc.2006.305167.
Повний текст джерелаZhiqun Cheng, Xiaopeng Zhou, and Kevin J. Chen. "Distributed amplifier using enhancement-mode AlGaN/GaN HEMTs." In 2008 International Conference on Communications, Circuits and Systems (ICCCAS). IEEE, 2008. http://dx.doi.org/10.1109/icccas.2008.4657735.
Повний текст джерелаAoki, Hitoshi, Hiroyuki Sakairi, Naotaka Kuroda, Atsushi Yamaguchi, and Ken Nakahara. "Drain Current Characteristics of Enhancement Mode GaN HEMTs." In 2020 IEEE Applied Power Electronics Conference and Exposition (APEC). IEEE, 2020. http://dx.doi.org/10.1109/apec39645.2020.9124203.
Повний текст джерелаImada, T., M. Kanamura, and T. Kikkawa. "Enhancement-mode GaN MIS-HEMTs for power supplies." In 2010 International Power Electronics Conference (IPEC - Sapporo). IEEE, 2010. http://dx.doi.org/10.1109/ipec.2010.5542039.
Повний текст джерелаKangping, Wang, Yang Xu, Zeng Xiangjun, Yu Xiaoling, Li Hongchang, Guo Yixuan, Gao Bing, and Ma Huan. "Analytical loss model of low voltage enhancement mode GaN HEMTs." In 2014 IEEE Energy Conversion Congress and Exposition (ECCE). IEEE, 2014. http://dx.doi.org/10.1109/ecce.2014.6953381.
Повний текст джерелаLin, Y. C., J. C. Lin, Y. Lin, C. H. Wu, Y. X. Huang, S. C. Liu, H. T. Hsu, et al. "Enhancement-mode GaN MIS-HEMTs with HfLaOx gate insulator." In 2016 Compound Semiconductor Week (CSW) [Includes 28th International Conference on Indium Phosphide & Related Materials (IPRM) & 43rd International Symposium on Compound Semiconductors (ISCS)]. IEEE, 2016. http://dx.doi.org/10.1109/iciprm.2016.7528611.
Повний текст джерелаZimmermann, T., Yu Cao, Jia Guo, Xiangning Luo, D. Jena, and H. Xing. "Top-down AlN/GaN enhancement- & depletion-mode nanoribbon HEMTs." In 2009 67th Annual Device Research Conference (DRC). IEEE, 2009. http://dx.doi.org/10.1109/drc.2009.5354874.
Повний текст джерелаJia Guo, T. Zimmermann, D. Jena, and Huili Xing. "Ultra-scaled AlN/GaN enhancement-& depletion-mode nanoribbon HEMTs." In 2009 International Semiconductor Device Research Symposium (ISDRS 2009). IEEE, 2009. http://dx.doi.org/10.1109/isdrs.2009.5378155.
Повний текст джерелаKim, S., I. Adesida, and Hwang. "Enhancement-mode InAlAs/InGaAs/InP HEMTs with Ir-based gate metallization." In Device Research Conference. IEEE, 2005. http://dx.doi.org/10.1109/drc.2005.1553147.
Повний текст джерелаTang, K., Z. Li, T. P. Chow, Y. Niiyama, T. Nomura, and S. Yoshida. "Enhancement-mode GaN hybrid MOS-HEMTs with breakdown voltage of 1300V." In IC's (ISPSD). IEEE, 2009. http://dx.doi.org/10.1109/ispsd.2009.5158056.
Повний текст джерелаЗвіти організацій з теми "Enhancement Mode HEMTs"
Shealy, James R. Enhancement Mode Power Switching AlGaN HEMTs. Fort Belvoir, VA: Defense Technical Information Center, May 2013. http://dx.doi.org/10.21236/ada584741.
Повний текст джерела