Увійти

Готові списки джерел за темами / Electronic Spin - Semiconductor Structures / Книги

Книги з теми "Electronic Spin - Semiconductor Structures"

Щоб переглянути інші типи публікацій з цієї теми, перейдіть за посиланням: Electronic Spin - Semiconductor Structures.

Автор: Grafiati

Опубліковано: 7 вересня 2023

Оформте джерело за APA, MLA, Chicago, Harvard та іншими стилями

Оберіть тип джерела:

Ознайомтеся з топ-37 книг для дослідження на тему "Electronic Spin - Semiconductor Structures".

Біля кожної праці в переліку літератури доступна кнопка «Додати до бібліографії». Скористайтеся нею – і ми автоматично оформимо бібліографічне посилання на обрану працю в потрібному вам стилі цитування: APA, MLA, «Гарвард», «Чикаго», «Ванкувер» тощо.

Також ви можете завантажити повний текст наукової публікації у форматі «.pdf» та прочитати онлайн анотацію до роботи, якщо відповідні параметри наявні в метаданих.

Переглядайте книги для різних дисциплін та оформлюйте правильно вашу бібліографію.

1

Ihn, Thomas. Electronic Quantum Transport in Mesoscopic Semiconductor Structures. New York, NY: Springer New York, 2004. http://dx.doi.org/10.1007/b97630.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

2

Electron spin resonance and related phenomena in low-dimensional structures. Berlin: Springer, 2009.

Знайти повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

3

Chamberlain, J. M. Electronic Properties of Multilayers and Low-Dimensional Semiconductor Structures. Boston, MA: Springer US, 1991.

Знайти повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

4

NATO, Advanced Study Institute on Electronic Properties of Multilayers and Low-Dimensional Semiconductor Structures (1989 Castéra-Verduzan France). Electronic properties of multilayers and low-dimensional semiconductor structures. New York: Plenum Press, 1990.

Знайти повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

5

Chamberlain, J. M., Laurence Eaves, and Jean-Claude Portal, eds. Electronic Properties of Multilayers and Low-Dimensional Semiconductor Structures. Boston, MA: Springer US, 1990. http://dx.doi.org/10.1007/978-1-4684-7412-1.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

6

Bechstedt, Friedhelm. Semiconductor surfaces and interfaces: Their atomic and electronic structures. Berlin: Akademie-Verlag, 1988.

Знайти повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

7

Winkler, Roland. Spin-orbit coupling effects in two-dimensional electron and hole systems. Berlin: Springer, 2003.

Знайти повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

8

Kanazawa, Naoya. Charge and Heat Transport Phenomena in Electronic and Spin Structures in B20-type Compounds. Tokyo: Springer Japan, 2015. http://dx.doi.org/10.1007/978-4-431-55660-2.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

9

Hemment, P. L. F., Denis Flandre, and A. N. Nazarov. Science and Technology of Semiconductor-On-Insulator Structures and Devices Operating in a Harsh Environment: Proceedings of the NATO Advanced Research Workshop on Science and Technology of Semiconductor-On-Insulator Structures and Devices Operating in a Harsh Environment Kiev, Ukraine 2630 April 2004 00. Dordrecht: Kluwer Academic Publishers, 2005.

Знайти повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

10

The globalisation of high technology production: Society, space, and semiconductors in the restructuring of the modern world. London: Routledge, 1989.

Знайти повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

11

Glazov, M. M. Electron & Nuclear Spin Dynamics in Semiconductor Nanostructures. Oxford University Press, 2018. http://dx.doi.org/10.1093/oso/9780198807308.001.0001.

Повний текст джерела

Анотація:

In recent years, the physics community has experienced a revival of interest in spin effects in solid state systems. On one hand, solid state systems, particularly semicon- ductors and semiconductor nanosystems, allow one to perform benchtop studies of quantum and relativistic phenomena. On the other hand, interest is supported by the prospects of realizing spin-based electronics where the electron or nuclear spins can play a role of quantum or classical information carriers. This book aims at rather detailed presentation of multifaceted physics of interacting electron and nuclear spins in semiconductors and, particularly, in semiconductor-based low-dimensional structures. The hyperfine interaction of the charge carrier and nuclear spins increases in nanosystems compared with bulk materials due to localization of electrons and holes and results in the spin exchange between these two systems. It gives rise to beautiful and complex physics occurring in the manybody and nonlinear system of electrons and nuclei in semiconductor nanosystems. As a result, an understanding of the intertwined spin systems of electrons and nuclei is crucial for in-depth studying and control of spin phenomena in semiconductors. The book addresses a number of the most prominent effects taking place in semiconductor nanosystems including hyperfine interaction, nuclear magnetic resonance, dynamical nuclear polarization, spin-Faraday and -Kerr effects, processes of electron spin decoherence and relaxation, effects of electron spin precession mode-locking and frequency focusing, as well as fluctuations of electron and nuclear spins.

Стилі APA, Harvard, Vancouver, ISO та ін.

12

Glazov, M. M. Spin Systems in Semiconductor Nanostructures. Oxford University Press, 2018. http://dx.doi.org/10.1093/oso/9780198807308.003.0002.

Повний текст джерела

Анотація:

This chapter is an introduction to a rich variety of effects taking place in the interacting system of electrons and nuclei in semiconductors. It includes also the basics of electronic properties of nanostructures and of spin physics, an overview of fundamental interactions in the electron and nuclear spin systems, the selection rules at optical transitions in semiconductors, spin resonance effect, as well as optical orientation, and dynamical nuclear polarization. In this chapter an analysis of particular features of spin dynamics arising in the structures with localized electrons such as quantum dots, which are studied further in the book, are addressed. The aim of this chapter is to provide basic minimum of information needed to read the remaining chapters.

Стилі APA, Harvard, Vancouver, ISO та ін.

13

Narlikar, A. V., and Y. Y. Fu, eds. Oxford Handbook of Nanoscience and Technology. Oxford University Press, 2017. http://dx.doi.org/10.1093/oxfordhb/9780199533046.001.0001.

Повний текст джерела

Анотація:

This Handbook consolidates some of the major scientific and technological achievements in different aspects of the field of nanoscience and technology. It consists of theoretical papers, many of which are linked with current and future nanodevices, molecular-based materials and junctions (including Josephson nanocontacts). Self-organization of nanoparticles, atomic chains, and nanostructures at surfaces are further described in detail. Topics include: a unified view of nanoelectronic devices; electronic and transport properties of doped silicon nanowires; quasi-ballistic electron transport in atomic wires; thermal transport of small systems; patterns and pathways in nanoparticle self-organization; nanotribology; and the electronic structure of epitaxial graphene. The volume also explores quantum-theoretical approaches to proteins and nucleic acids; magnetoresistive phenomena in nanoscale magnetic contacts; novel superconducting states in nanoscale superconductors; left-handed metamaterials; correlated electron transport in molecular junctions; spin currents in semiconductor nanostructures; and disorder-induced electron localization in molecular-based materials.

Стилі APA, Harvard, Vancouver, ISO та ін.

14

Fanciulli, Marco. Electron Spin Resonance and Related Phenomena in Low-Dimensional Structures. Springer, 2012.

Знайти повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

15

Singh, Jasprit. Electronic and Optoelectronic Properties of Semiconductor Structures. Cambridge University Press, 2003.

Знайти повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

16

Electronic Quantum Transport in Mesoscopic Semiconductor Structures. Springer London, Limited, 2004.

Знайти повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

17

Singh, Jasprit. Electronic and Optoelectronic Properties of Semiconductor Structures. Cambridge University Press, 2003.

Знайти повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

18

Electronic Quantum Transport in Mesoscopic Semiconductor Structures. Springer, 2004.

Знайти повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

19

Electronic and Optoelectronic Properties of Semiconductor Structures. Cambridge University Press, 2003.

Знайти повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

20

Ihn, Thomas. Electronic Quantum Transport in Mesoscopic Semiconductor Structures. Springer New York, 2011.

Знайти повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

21

Electronic and Optoelectronic Properties of Semiconductor Structures. Cambridge University Press, 2007.

Знайти повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

22

Singh, Jasprit. Electronic and Optoelectronic Properties of Semiconductor Structures. Cambridge University Press, 2012.

Знайти повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

23

Ihn, Thomas. Electronic Quantum Transport in Mesoscopic Semiconductor Structures. Springer, 2014.

Знайти повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

24

Spin-orbit Coupling Effects in Two-Dimensional Electron and Hole Systems. Springer, 2003.

Знайти повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

25

Enderlein, Rolf, and Friedhelm Bechstedt. Semiconductor Surfaces and Interfaces: Their Atomic and Electronic Structures. de Gruyter GmbH, Walter, 2022.

Знайти повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

26

Portal, J. C., J. M. Chamberlain, and L. Eaves. Electronic Properties of Multilayers and Low-Dimensional Semiconductor Structures. Springer, 2012.

Знайти повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

27

Winkler, Roland. Spin-Orbit Coupling Effects in Two-Dimensional Electron and Hole Systems. Springer, 2003.

Знайти повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

28

Winkler, Roland. Spin-orbit Coupling Effects in Two-Dimensional Electron and Hole Systems. Springer, 2010.

Знайти повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

29

(Editor), J. M. Chamberlain, L. Eaves (Editor), and J. C. Portal (Editor), eds. Electronic Properties of Multilayers and Low-Dimensional Semiconductor Structures (NATO Science Series: B:). Springer, 1991.

Знайти повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

30

Kanazawa, Naoya. Charge and Heat Transport Phenomena in Electronic and Spin Structures in B20-type Compounds. Springer, 2016.

Знайти повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

31

Kanazawa, Naoya. Charge and Heat Transport Phenomena in Electronic and Spin Structures in B20-Type Compounds. Springer, 2015.

Знайти повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

32

Kanazawa, Naoya. Charge and Heat Transport Phenomena in Electronic and Spin Structures in B20-Type Compounds. Springer Japan, 2015.

Знайти повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

33

Kenyon, Ian R. Quantum 20/20. Oxford University Press, 2019. http://dx.doi.org/10.1093/oso/9780198808350.001.0001.

Повний текст джерела

Анотація:

This text reviews fundametals and incorporates key themes of quantum physics. One theme contrasts boson condensation and fermion exclusivity. Bose–Einstein condensation is basic to superconductivity, superfluidity and gaseous BEC. Fermion exclusivity leads to compact stars and to atomic structure, and thence to the band structure of metals and semiconductors with applications in material science, modern optics and electronics. A second theme is that a wavefunction at a point, and in particular its phase is unique (ignoring a global phase change). If there are symmetries, conservation laws follow and quantum states which are eigenfunctions of the conserved quantities. By contrast with no particular symmetry topological effects occur such as the Bohm–Aharonov effect: also stable vortex formation in superfluids, superconductors and BEC, all these having quantized circulation of some sort. The quantum Hall effect and quantum spin Hall effect are ab initio topological. A third theme is entanglement: a feature that distinguishes the quantum world from the classical world. This property led Einstein, Podolsky and Rosen to the view that quantum mechanics is an incomplete physical theory. Bell proposed the way that any underlying local hidden variable theory could be, and was experimentally rejected. Powerful tools in quantum optics, including near-term secure communications, rely on entanglement. It was exploited in the the measurement of CP violation in the decay of beauty mesons. A fourth theme is the limitations on measurement precision set by quantum mechanics. These can be circumvented by quantum non-demolition techniques and by squeezing phase space so that the uncertainty is moved to a variable conjugate to that being measured. The boundaries of precision are explored in the measurement of g-2 for the electron, and in the detection of gravitational waves by LIGO; the latter achievement has opened a new window on the Universe. The fifth and last theme is quantum field theory. This is based on local conservation of charges. It reaches its most impressive form in the quantum gauge theories of the strong, electromagnetic and weak interactions, culminating in the discovery of the Higgs. Where particle physics has particles condensed matter has a galaxy of pseudoparticles that exist only in matter and are always in some sense special to particular states of matter. Emergent phenomena in matter are successfully modelled and analysed using quasiparticles and quantum theory. Lessons learned in that way on spontaneous symmetry breaking in superconductivity were the key to constructing a consistent quantum gauge theory of electroweak processes in particle physics.

Стилі APA, Harvard, Vancouver, ISO та ін.

34

Basu, Prasanta Kumar, Bratati Mukhopadhyay, and Rikmantra Basu. Semiconductor Nanophotonics. Oxford University PressOxford, 2022. http://dx.doi.org/10.1093/oso/9780198784692.001.0001.

Повний текст джерела

Анотація:

Abstract Nanometre sized structures made of semiconductors, insulators and metals and grown by modern growth technologies or by chemical synthesis exhibit novel electronic and optical phenomena due to confinement of electrons and photons. Strong interactions between electrons and photons in narrow regions lead to inhibited spontaneous emission, thresholdless laser operation, and Bose Einstein condensation of exciton-polaritons in microcavities. Generation of sub-wavelength radiation by surface Plasmon-polaritons at metal-semiconductor interfaces, creation of photonic band gap in dielectrics, and realization of nanometer sized semiconductor or insulator structures with negative permittivity and permeability, known as metamaterials, are further examples in the area of nanophotonics. The studies help develop Spasers and plasmonic nanolasers of subwavelength dimensions, paving the way to use plasmonics in future data centres and high speed computers working at THz bandwidth with less than a few fJ/bit dissipation. The present book intends to serveas a textbook for graduate students and researchers intending to have introductory ideas of semiconductor nanophotonics. It gives an introduction to electron-photon interactions in quantum wells, wires and dots and then discusses the processes in microcavities, photonic band gaps and metamaterials and related applications. The phenomena and device applications under strong light-matter interactions are discussed by mostly using classical and semi-classical theories. Numerous examples and problems accompany each chapter.

Стилі APA, Harvard, Vancouver, ISO та ін.

35

Kavokin, Alexey V., Jeremy J. Baumberg, Guillaume Malpuech, and Fabrice P. Laussy. Microcavities. Oxford University Press, 2017. http://dx.doi.org/10.1093/oso/9780198782995.001.0001.

Повний текст джерела

Анотація:

Both rich fundamental physics of microcavities and their intriguing potential applications are addressed in this book, oriented to undergraduate and postgraduate students as well as to physicists and engineers. We describe the essential steps of development of the physics of microcavities in their chronological order. We show how different types of structures combining optical and electronic confinement have come into play and were used to realize first weak and later strong light–matter coupling regimes. We discuss photonic crystals, microspheres, pillars and other types of artificial optical cavities with embedded semiconductor quantum wells, wires and dots. We present the most striking experimental findings of the recent two decades in the optics of semiconductor quantum structures. We address the fundamental physics and applications of superposition light-matter quasiparticles: exciton-polaritons and describe the most essential phenomena of modern Polaritonics: Physics of the Liquid Light. The book is intended as a working manual for advanced or graduate students and new researchers in the field.

Стилі APA, Harvard, Vancouver, ISO та ін.

36

Schmickler, Wolfgang. Interfacial Electrochemistry. Oxford University Press, 1996. http://dx.doi.org/10.1093/oso/9780195089325.001.0001.

Повний текст джерела

Анотація:

Electrochemistry is the study of a special class of interfaces--those between an ionic and an electronic conductor--that can conduct current. This makes it especially important to research and for industrial applications such as semiconductors. This book examines different topics within interfacial electrochemistry, including the theory of structures and processes at metal- solution and semiconductor-solution interfaces, the principles of classical and modern experimental methods, and some of the applications of electrochemistry. Students and nonspecialists in materials science, surface science, and chemistry will find this a valuable source of information.

Стилі APA, Harvard, Vancouver, ISO та ін.

37

Bertel, E., and A. Menzel. Nanostructured surfaces: Dimensionally constrained electrons and correlation. Edited by A. V. Narlikar and Y. Y. Fu. Oxford University Press, 2017. http://dx.doi.org/10.1093/oxfordhb/9780199533046.013.11.

Повний текст джерела

Анотація:

This article examines dimensionally constrained electrons and electronic correlation in nanostructured surfaces. Correlation effects play an important role in spatial confinement of electrons by nanostructures. The effect of correlation will become increasingly dominant as the dimensionality of the electron wavefunction is reduced. This article focuses on quasi-one-dimensional (quasi-1D) confinement, i.e. more or less strongly coupled one-dimensional nanostructures, with occasional reference to 2D and 0D systems. It first explains how correlated systems exhibit a variety of electronically driven phase transitions, and especially the phases occurring in the generic phase diagram of correlated materials. It then describes electron–electron and electron–phonon interactions in low-dimensional systems and the phase diagram of real quasi-1D systems. Two case studies are considered: metal chains on silicon surfaces and quasi-1D structures on metallic surfaces. The article shows that spontaneous symmetry breaking occurs for many quasi-1D systems on both semiconductor and metal surfaces at low temperature.

Стилі APA, Harvard, Vancouver, ISO та ін.

Ми пропонуємо знижки на всі преміум-плани для авторів, чиї праці увійшли до тематичних добірок літератури. Зв'яжіться з нами, щоб отримати унікальний промокод!