Статті в журналах з теми "Electronic semiconductor"
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Choi, Junhwan, and Hocheon Yoo. "Combination of Polymer Gate Dielectric and Two-Dimensional Semiconductor for Emerging Field-Effect Transistors." Polymers 15, no. 6 (March 10, 2023): 1395. http://dx.doi.org/10.3390/polym15061395.
Повний текст джерелаAlivisatos, A. Paul. "Semiconductor Nanocrystals." MRS Bulletin 20, no. 8 (August 1995): 23–32. http://dx.doi.org/10.1557/s0883769400045073.
Повний текст джерелаChi, Zeyu, Jacob J. Asher, Michael R. Jennings, Ekaterine Chikoidze, and Amador Pérez-Tomás. "Ga2O3 and Related Ultra-Wide Bandgap Power Semiconductor Oxides: New Energy Electronics Solutions for CO2 Emission Mitigation." Materials 15, no. 3 (February 2, 2022): 1164. http://dx.doi.org/10.3390/ma15031164.
Повний текст джерелаValentine, Nathan, Diganta Das, Bhanu Sood, and Michael Pecht. "Failure Analyses of Modern Power Semiconductor Switching Devices." International Symposium on Microelectronics 2015, no. 1 (October 1, 2015): 000690–95. http://dx.doi.org/10.4071/isom-2015-tha56.
Повний текст джерелаSAPRA, SAMEER, RANJANI VISWANATHA, and D. D. SARMA. "ELECTRONIC STRUCTURE OF SEMICONDUCTOR NANOCRYSTALS: AN ACCURATE TIGHT-BINDING DESCRIPTION." International Journal of Nanoscience 04, no. 05n06 (October 2005): 893–99. http://dx.doi.org/10.1142/s0219581x05003851.
Повний текст джерелаNakayama, Yasuo, Ryohei Tsuruta, and Tomoyuki Koganezawa. "‘Molecular Beam Epitaxy’ on Organic Semiconductor Single Crystals: Characterization of Well-Defined Molecular Interfaces by Synchrotron Radiation X-ray Diffraction Techniques." Materials 15, no. 20 (October 13, 2022): 7119. http://dx.doi.org/10.3390/ma15207119.
Повний текст джерелаKlimm, Detlef. "Electronic materials with a wide band gap: recent developments." IUCrJ 1, no. 5 (August 29, 2014): 281–90. http://dx.doi.org/10.1107/s2052252514017229.
Повний текст джерелаNgai, J. H., K. Ahmadi-Majlan, J. Moghadam, M. Chrysler, D. P. Kumah, C. H. Ahn, F. J. Walker, et al. "Electrically Coupling Multifunctional Oxides to Semiconductors: A Route to Novel Material Functionalities." MRS Advances 1, no. 4 (2016): 255–63. http://dx.doi.org/10.1557/adv.2016.101.
Повний текст джерелаBrillson, Leonard, Jonathan Cox, Hantian Gao, Geoffrey Foster, William Ruane, Alexander Jarjour, Martin Allen, David Look, Holger von Wenckstern, and Marius Grundmann. "Native Point Defect Measurement and Manipulation in ZnO Nanostructures." Materials 12, no. 14 (July 12, 2019): 2242. http://dx.doi.org/10.3390/ma12142242.
Повний текст джерелаSu, Xiao-Qian, and Xue-Feng Wang. "Electronic and Spintronic Properties of Armchair MoSi2N4 Nanoribbons Doped by 3D Transition Metals." Nanomaterials 13, no. 4 (February 9, 2023): 676. http://dx.doi.org/10.3390/nano13040676.
Повний текст джерелаMAJIDI, ROYA. "EFFECT OF DOPING ON THE ELECTRONIC PROPERTIES OF GRAPHYNE." Nano 08, no. 06 (November 18, 2013): 1350060. http://dx.doi.org/10.1142/s1793292013500604.
Повний текст джерелаAl-Mumen, Haider Sahib. "Flexible Field effect transistor construction techniques, a brief review." Al-Qadisiyah Journal for Engineering Sciences 14, no. 2 (July 19, 2021): 117–22. http://dx.doi.org/10.30772/qjes.v14i2.753.
Повний текст джерелаDang, Chaoqun, Anliang Lu, Heyi Wang, Hongti Zhang, and Yang Lu. "Diamond semiconductor and elastic strain engineering." Journal of Semiconductors 43, no. 2 (February 1, 2022): 021801. http://dx.doi.org/10.1088/1674-4926/43/2/021801.
Повний текст джерелаMasri, Pierre. "Electronic structure of semiconductor-metal-semiconductor heterostructures." Applied Surface Science 56-58 (January 1992): 363–69. http://dx.doi.org/10.1016/0169-4332(92)90257-x.
Повний текст джерелаBRATANOVSKII, Sergei, Yerdos AMANKULOV, and Ilya MEDVEDEV. "MULTI-POINTED FIELD-EMISSION CATHODE AS A GENERATOR OF HIGHFREQUENCY OSCILLATIONS." Periódico Tchê Química 17, no. 36 (December 20, 2020): 542–53. http://dx.doi.org/10.52571/ptq.v17.n36.2020.557_periodico36_pgs_542_553.pdf.
Повний текст джерелаCapasso, Federico. "Bandgap and Interface Engineering for Advanced Electronic and Photonic Devices." MRS Bulletin 16, no. 6 (June 1991): 23–29. http://dx.doi.org/10.1557/s0883769400056700.
Повний текст джерелаGesevičius, Donatas, Antonia Neels, Léo Duchêne, Erwin Hack, Jakob Heier, and Frank Nüesch. "Physical vapour deposition of cyanine salts and their first application in organic electronic devices." Journal of Materials Chemistry C 7, no. 2 (2019): 414–23. http://dx.doi.org/10.1039/c8tc05286g.
Повний текст джерелаFortunato, Elvira, Alexandra Gonçalves, António Marques, Ana Pimentel, Pedro Barquinha, Hugo Águas, Luís Pereira, et al. "Multifunctional Thin Film Zinc Oxide Semiconductors: Application to Electronic Devices." Materials Science Forum 514-516 (May 2006): 3–7. http://dx.doi.org/10.4028/www.scientific.net/msf.514-516.3.
Повний текст джерелаTonkoshkur, A. S., A. B. Glot, and A. V. Ivanchenko. "Basic models in dielectric spectroscopy of heterogeneous materials with semiconductor inclusions." Multidiscipline Modeling in Materials and Structures 13, no. 1 (June 12, 2017): 36–57. http://dx.doi.org/10.1108/mmms-08-2016-0037.
Повний текст джерелаWang, Xue Yan, Jian Bang Zheng, Xiao Jiang Li та Chong De Cao. "Intrinsic Electronic Structures and Optical Anisotropy of α- and β-Phase Copper Phthalocyanine Molecular Crystals". Applied Mechanics and Materials 864 (квітень 2017): 133–41. http://dx.doi.org/10.4028/www.scientific.net/amm.864.133.
Повний текст джерелаChen, Cheng, Meixiao Wang, Jinxiong Wu, Huixia Fu, Haifeng Yang, Zhen Tian, Teng Tu, et al. "Electronic structures and unusually robust bandgap in an ultrahigh-mobility layered oxide semiconductor, Bi2O2Se." Science Advances 4, no. 9 (September 2018): eaat8355. http://dx.doi.org/10.1126/sciadv.aat8355.
Повний текст джерелаLiu, Yi-Fan, and Zhi-Yong Zhang. "Carbon based electronic technology in post-Moore era: progress, applications and challenges." Acta Physica Sinica 71, no. 6 (2022): 068503. http://dx.doi.org/10.7498/aps.71.20212076.
Повний текст джерелаGao, Xiangxiang, Hai-Yang Liu, Jincheng Zhang, Jian Zhu, Jingjing Chang, and Yue Hao. "Thin-Film Transistors from Electrochemically Exfoliated In2Se3 Nanosheets." Micromachines 13, no. 6 (June 16, 2022): 956. http://dx.doi.org/10.3390/mi13060956.
Повний текст джерелаBatstone, J. L. "Structural and electronic properties of defects in semiconductors." Proceedings, annual meeting, Electron Microscopy Society of America 53 (August 13, 1995): 4–5. http://dx.doi.org/10.1017/s0424820100136398.
Повний текст джерелаHersam, M. C., and R. G. Reifenberger. "Charge Transport through Molecular Junctions." MRS Bulletin 29, no. 6 (June 2004): 385–90. http://dx.doi.org/10.1557/mrs2004.120.
Повний текст джерелаKim, Kyunghun, Hocheon Yoo, and Eun Kwang Lee. "New Opportunities for Organic Semiconducting Polymers in Biomedical Applications." Polymers 14, no. 14 (July 21, 2022): 2960. http://dx.doi.org/10.3390/polym14142960.
Повний текст джерелаPark, Do-Joon, and Shuzhi Liu. "A Study on the Economic Effects of U.S. Export Controls on Semiconductors to China." Korea International Trade Research Institute 19, no. 1 (February 28, 2023): 129–42. http://dx.doi.org/10.16980/jitc.19.1.202302.129.
Повний текст джерелаZhang, Xinan, Binghao Wang, Lizhen Huang, Wei Huang, Zhi Wang, Weigang Zhu, Yao Chen, YanLi Mao, Antonio Facchetti, and Tobin J. Marks. "Breath figure–derived porous semiconducting films for organic electronics." Science Advances 6, no. 13 (March 2020): eaaz1042. http://dx.doi.org/10.1126/sciadv.aaz1042.
Повний текст джерелаHuberman, M. L., and J. Maserjian. "Electronic states of semiconductor-metal-semiconductor quantum-well structures." Physical Review B 37, no. 15 (May 15, 1988): 9065–68. http://dx.doi.org/10.1103/physrevb.37.9065.
Повний текст джерелаHuberman, M. L., and J. Maserjian. "Electronic states of semiconductor/metal/semiconductor quantum well structures." Superlattices and Microstructures 4, no. 4-5 (January 1988): 555–58. http://dx.doi.org/10.1016/0749-6036(88)90237-6.
Повний текст джерелаKraus, Tobias. "Electronic Multiscale Hybrid Materials: Sinter-Free Inks, Printed Transparent Grids, and Soft Devices." Proceedings 56, no. 1 (December 18, 2020): 24. http://dx.doi.org/10.3390/proceedings2020056024.
Повний текст джерелаBastard, G., and J. Brum. "Electronic states in semiconductor heterostructures." IEEE Journal of Quantum Electronics 22, no. 9 (September 1986): 1625–44. http://dx.doi.org/10.1109/jqe.1986.1073186.
Повний текст джерелаMendez, E. "Electronic mobility in semiconductor heterostructures." IEEE Journal of Quantum Electronics 22, no. 9 (September 1986): 1720–27. http://dx.doi.org/10.1109/jqe.1986.1073191.
Повний текст джерелаVoon, L. C. Lew Yan, Yong Zhang, B. Lassen, M. Willatzen, Qihua Xiong, and P. C. Eklund. "Electronic Properties of Semiconductor Nanowires." Journal of Nanoscience and Nanotechnology 8, no. 1 (January 1, 2008): 1–26. http://dx.doi.org/10.1166/jnn.2008.n03.
Повний текст джерелаGould, Paula. "Semiconductor friction undergoes electronic control." Materials Today 9, no. 9 (September 2006): 15. http://dx.doi.org/10.1016/s1369-7021(06)71614-5.
Повний текст джерелаWoodall, Jerry. "Electronic properties of semiconductor interfaces." Proceedings, annual meeting, Electron Microscopy Society of America 45 (August 1987): 334–37. http://dx.doi.org/10.1017/s0424820100126470.
Повний текст джерелаMönch, Winfried. "Metal-semiconductor contacts: electronic properties." Surface Science 299-300 (January 1994): 928–44. http://dx.doi.org/10.1016/0039-6028(94)90707-2.
Повний текст джерелаKasera, Renu, and M. Z. Khan. "Semiconductor Devices and Electronic World." Journal of Pure Applied and Industrial Physics 9, no. 5 (May 30, 2019): 29–39. http://dx.doi.org/10.29055/jpaip/342.
Повний текст джерелаChaabane, H., M. Zazoui, J. C. Bourgoin, and V. Donchev. "Electronic transport through semiconductor barriers." Semiconductor Science and Technology 8, no. 12 (December 1, 1993): 2077–84. http://dx.doi.org/10.1088/0268-1242/8/12/008.
Повний текст джерелаHimpsel, F. J. "Electronic structure of semiconductor surfaces." Applied Physics A Solids and Surfaces 38, no. 3 (November 1985): 205–12. http://dx.doi.org/10.1007/bf00616498.
Повний текст джерелаHerman, Frank. "Electronic structure of semiconductor interfaces." International Journal of Quantum Chemistry 28, S19 (June 19, 2009): 547–57. http://dx.doi.org/10.1002/qua.560280849.
Повний текст джерелаHu, Xiaolong, Peter Krull, Bassel de Graff, Kevin Dowling, John A. Rogers, and William J. Arora. "Stretchable Inorganic-Semiconductor Electronic Systems." Advanced Materials 23, no. 26 (April 29, 2011): 2933–36. http://dx.doi.org/10.1002/adma.201100144.
Повний текст джерелаSulaiman, Khaulah, Zubair Ahmad, Muhamad Saipul Fakir, Fadilah Abd Wahab, Shahino Mah Abdullah, and Zurianti Abdul Rahman. "Organic Semiconductors: Applications in Solar Photovoltaic and Sensor Devices." Materials Science Forum 737 (January 2013): 126–32. http://dx.doi.org/10.4028/www.scientific.net/msf.737.126.
Повний текст джерелаTREW, R. J., and M. W. SHIN. "HIGH FREQUENCY, HIGH TEMPERATURE FIELD-EFFECT TRANSISTORS FABRICATED FROM WIDE BAND GAP SEMICONDUCTORS." International Journal of High Speed Electronics and Systems 06, no. 01 (March 1995): 211–36. http://dx.doi.org/10.1142/s0129156495000067.
Повний текст джерелаMasri, Pierre. "Quasicontinuum of metal electronic states and the electronic properties of semiconductor-metal-semiconductor heterostructures." Physical Review B 41, no. 14 (May 15, 1990): 10276–79. http://dx.doi.org/10.1103/physrevb.41.10276.
Повний текст джерелаGunshor, Robert L., and Arto V. Nurmikko. "II-VI Blue-Green Laser Diodes: A Frontier of Materials Research." MRS Bulletin 20, no. 7 (July 1995): 15–19. http://dx.doi.org/10.1557/s088376940003712x.
Повний текст джерелаAbdubannopov, M. I., and Х. T. Yuldashev. "OPTICAL AND ELECTRICAL PROPERTIES OF SEMICONDUCTOR CRYSTALS." International Journal of Advance Scientific Research 03, no. 04 (April 1, 2023): 83–89. http://dx.doi.org/10.37547/ijasr-03-04-12.
Повний текст джерелаHasan, Md Nazmul, Edward Swinnich, and Jung-Hun Seo. "Recent Progress in Gallium Oxide and Diamond Based High Power and High-Frequency Electronics." International Journal of High Speed Electronics and Systems 28, no. 01n02 (March 2019): 1940004. http://dx.doi.org/10.1142/s0129156419400044.
Повний текст джерелаCao, Zhen, Moussab Harb, Sergey M. Kozlov, and Luigi Cavallo. "Structural and Electronic Effects at the Interface between Transition Metal Dichalcogenide Monolayers (MoS2, WSe2, and Their Lateral Heterojunctions) and Liquid Water." International Journal of Molecular Sciences 23, no. 19 (October 7, 2022): 11926. http://dx.doi.org/10.3390/ijms231911926.
Повний текст джерелаFetahović, Irfan, Milić Pejović, and Miloš Vujisić. "Radiation Damage in Electronic Memory Devices." International Journal of Photoenergy 2013 (2013): 1–5. http://dx.doi.org/10.1155/2013/170269.
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