Дисертації з теми "Electron gas states"
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Yu, Wing Wa. "Low temperature spintronics : probing charge and spin states with two-dimensional electron gas." Thesis, University of British Columbia, 2009. http://hdl.handle.net/2429/12580.
Повний текст джерелаYokota, Takeru. "Functional-renormalization-group aided density-functional theory - ab-inito description of ground and excited states of quantum many-body systems -." Kyoto University, 2019. http://hdl.handle.net/2433/242609.
Повний текст джерелаWright, Timothy Grahame. "Studies of some gas-phase oxidation reactions using electron spectroscopy and the electronic structure of some small molecules." Thesis, University of Southampton, 1991. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.358873.
Повний текст джерелаOuali, Fatma Fouzia. "Phonon emission from a two dimensional electron gas." Thesis, University of Nottingham, 1991. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.293620.
Повний текст джерелаMcFadden, C. "Electron transport in GaAs semiconductor devices." Thesis, University of Cambridge, 1985. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.332168.
Повний текст джерелаGilbert, Timothy George. "Electronic states of ultrathin GaAs/AlAs superlattices." Thesis, University of Leicester, 1988. http://hdl.handle.net/2381/35893.
Повний текст джерелаHedberg, James. "Low temperature force microscopy on a deeply embedded two dimensional electron gas." Thesis, McGill University, 2011. http://digitool.Library.McGill.CA:80/R/?func=dbin-jump-full&object_id=97016.
Повний текст джерелаLa physique expérimentale aux limites des basses températures contribue constamment à des percées majeures dans le domaine de la matière condensée. Pour sa part, la microscopie à balayage de sonde offre la possibilité unique d'observer les éléments nanométriques qui car- actérisent le paysage quantique. Ce projet allie les avantages de ces deux disciplines par le développement d'un microscope à balayage de sonde opérant à très basse température (Ultra Low Temperature Scanning Probe Microscope), le « ULT-SPM. » Nous étudions en particulier un système exotique de la matière condensée : un gaz d'électrons bidimensionnel profondément enfoui, comportant une croissance latérale sur le bord clivé. Le couplage des forces dynamiques de la sonde du microscope et électrostatiques du gaz à électrons, nous permet de mesurer à distance et de façon non invasive, les caractéristiques de transport des charges, qui ne sont normalement observables qu'à l'aide d'électrodes et donc, par un contact physique. Dans le régime de l'effet Hall quantique, nous pouvons exploiter la grande sensibilité du capteur de force local pour étudier des phénomènes spatiodépendants associés aux distribu- tions de potentiel électronique. L'instrument se révèle prometteur pour la poursuite de nom- breuses expériences passionnantes où les conditions de basse température, champ magnétique élevé et mesures locales sont essentielles. Comme il est conçu pour fonctionner à 50 mK et sous un champ magnétique pouvant at- teindre 16 T, plusieurs composantes du microscope ne sont pas disponibles commercialement et ont donc été entièrement conçues et fabriquées sur place. Les détails intrinsèques de la con- ception, de la construction et du fonctionnement sont ainsi documentés à fond. Ceci inclut : l'assemblage du microscope, les composantes modulaires comme la tête de balayage et les mo- teurs, l'électronique des contrôles de l'instrument et l'intégration à l'infrastructure opérant à basse température. Dans cet instrument, un diapason de quartz fait office de capteur, ce qui permet une grande flexibilité quant aux différents modes d'opération, le plus utile étant la mi- croscopie de force électrostatique. Les limites de bruit sont étudiées et comparées aux sources de bruit expérimentales. Les schémas détaillés de l'instrument sont également inclus.
Woolfe, Adam. "Electronic transport through localised states in GaAs transistors." Thesis, University of Cambridge, 1995. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.390216.
Повний текст джерелаBrummell, M. A. "High magnetic field studies of the two-dimensional electron gas formed in semiconductor heterostructures." Thesis, University of Oxford, 1985. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.355716.
Повний текст джерелаIbraheim, K. S. "Angular and polarisation correlation measurements on the 2'1P and 3'1P states of helium." Thesis, University of Stirling, 1986. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.375414.
Повний текст джерелаLatt, Kyaw Zin. "Interactions of Two Dimensional Surface State Electron Gas with Zero, One and Two Dimensional Structures." Ohio University / OhioLINK, 2013. http://rave.ohiolink.edu/etdc/view?acc_num=ohiou1383242271.
Повний текст джерелаBrown, Robert James. "Electronic transport in GaAs/AlGaAs microstructures." Thesis, University of Cambridge, 1990. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.335681.
Повний текст джерелаWong, K. B. "Electronic properties of GaAs-GaAlAs superlattices." Thesis, University of Newcastle Upon Tyne, 1985. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.356158.
Повний текст джерелаTanaka, Yasunori, Yasunobu Yokomizu, Motohiro Ishikawa, and Toshiro Matsumura. "Particle Composition of High-Pressure SF_6 Plasma with Electron Temperature Greater than Gas Temperature." IEEE, 1997. http://hdl.handle.net/2237/7280.
Повний текст джерелаLovering, David James. "Time resolved optical spectroscopy of electronic states in GaAs quantum wells." Thesis, University of Exeter, 1991. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.305754.
Повний текст джерелаZhang, Ningjiao. "Low Frequency Noise Characterization of AlGaN/GaN High Electron Mobility Transistors." The Ohio State University, 2013. http://rave.ohiolink.edu/etdc/view?acc_num=osu1366369049.
Повний текст джерелаHuang, Ying. "Electronic states and optical properties of GaAs/AIGaAs and GaInP/AlGaInP quantum wells." Thesis, Click to view the E-thesis via HKUTO, 2004. http://sunzi.lib.hku.hk/hkuto/record/B31479820.
Повний текст джерелаHonda, S., H. Itoh, J. Inoue, H. Kurebayashi, T. Trypiniotis, C. H. W. Barnes, A. Hirohata, and J. A. C. Bland. "Spin polarization control through resonant states in an Fe/GaAs Schottky barrier." American Physical Society, 2008. http://hdl.handle.net/2237/11246.
Повний текст джерелаVeal, Timothy David. "High resolution electron energy loss spectroscopy of narrow gap III V semiconductor surfaces and interfaces." Thesis, University of Warwick, 2002. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.252483.
Повний текст джерелаHumphreys, Richard David. "In-beam electron spectroscopy of ²âµâ´No and ²²â¶U in conjunction with a gas-filled recoil separator." Thesis, University of Liverpool, 2003. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.288233.
Повний текст джерелаCiro, Guido. "TD-DFT and TD-DFT/PCM approaches to molecular electronic excited states in gas phase and in solution." Doctoral thesis, Scuola Normale Superiore, 2011. http://hdl.handle.net/11384/85797.
Повний текст джерелаBrannick, A. "Modelling of steady-state and transient effects in advanced AIGaN/GaN high electron mobility transistors." Thesis, University of Essex, 2010. https://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.528850.
Повний текст джерелаBlankenship, Thomas Keith. "Rapidity gap in the final state hadron distribution in deep inelastic electron scattering at HERA." Diss., This resource online, 1995. http://scholar.lib.vt.edu/theses/available/etd-06062008-170753/.
Повний текст джерелаWen, Yuan. "Theoretical and experimental studies of electronic states in InAs/GaAs self-assembled quantum dots." Click to view the E-thesis via HKUTO, 2009. http://sunzi.lib.hku.hk/hkuto/record/B43224003.
Повний текст джерелаChoi, Hyun-jin. "Investigation of resonant Raman scattering in type II GaAs/A1As superlattices." Thesis, University of Oxford, 2001. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.365725.
Повний текст джерелаMand, R. S. "Characterisation and applications of heterostructures : Characterisation of GaAs/GaAlAs heterostructures and GaAs/GaAlAs double heterostructure electronic and photonic switches." Thesis, University of Bradford, 1985. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.371479.
Повний текст джерелаNorth, Stephen Michael. "Electronic structure of GaSb/GaAs and Si/Ge quantum dots." Thesis, University of Newcastle Upon Tyne, 2001. http://hdl.handle.net/10443/551.
Повний текст джерелаMoro, Alberto, and Laura Lonza. "Electricity carbon intensity in European Member States: Impacts on GHG emissions of electric vehicles." Elsevier, 2017. https://publish.fid-move.qucosa.de/id/qucosa%3A73241.
Повний текст джерелаDing, Yi. "Quantum well state of cubic inclusions in hexagonal silicon carbide studied with ballistic electron emission microscopy." Columbus, Ohio : Ohio State University, 2004. http://rave.ohiolink.edu/etdc/view?acc%5Fnum=osu1086207334.
Повний текст джерелаTitle from first page of PDF file. Document formatted into pages; contains xv, 150 p.; also includes graphics (some col.). Includes abstract and vita. Advisor: Jonathan P. Pelz, Dept. of Physics. Includes bibliographical references (p. 144-150).
Erslev, Peter Tweedie 1979. "The electronic structure within the mobility gap of transparent amorphous oxide semiconductors." Thesis, University of Oregon, 2010. http://hdl.handle.net/1794/10566.
Повний текст джерелаTransparent amorphous oxide semiconductors are a relatively new class of materials which show significant promise for electronic device applications. The electron mobility in these materials is at least ten times greater than that of the current dominant material for thin-film transistors: amorphous silicon. The density of states within the gap of a semiconductor largely determines the characteristics of a device fabricated from it. Thus, a fundamental understanding of the electronic structure within the mobility gap of amorphous oxides is crucial to fully developing technologies based around them. Amorphous zinc tin oxide (ZTO) and indium gallium zinc oxide (IGZO) were investigated in order to determine this sub-gap structure. Junction-capacitance based methods including admittance spectroscopy and drive level capacitance profiling (DLCP) were used to find the free carrier and deep defect densities. Defects located near insulator-semiconductor interfaces were commonly observed and strongly depended on fabrication conditions. Transient photocapacitance spectroscopy (TPC) indicated broad valence band-tails for both the ZTO and IGZO samples, characterized by Urbach energies of 110±20 meV. These large band-tail widths imply that significant structural disorder exists in the atomic lattice of these materials. While such broad band-tails generally correlate with poor electronic transport properties, the density of states near the conduction band is more important for devices such as transistors. The TPC spectra also revealed an optically active defect located at the insulator-semiconductor junction. Space-charge-limited current (SCLC) measurements were attempted in order to deduce the density of states near the conduction band. While the SCLC results were promising, their interpretation was too ambiguous to obtain a detailed picture of the electronic state distribution. Another technique, modulated photocurrent spectroscopy (MPC), was then employed for this purpose. Using this method narrow conduction band-tails were determined for the ZTO samples with Urbach energies near 10 meV. Thus, by combining the results of the DLCP, TPC and MPC measurements, a quite complete picture of the density of states within the mobility gap of these amorphous oxides has emerged. The relationship of this state distribution to transistor performance is discussed as well as to the future development of device applications of these materials.
Committee in charge: Stephen Kevan, Chairperson, Physics; J David Cohen, Member, Physics; David Strom, Member, Physics; Jens Noeckel, Member, Physics; David Johnson, Outside Member, Chemistry
Zhang, Xin. "Electrochemical and structural investigations of a layered AU,PT-YSZ mixed potential gas sensing electrode." Doctoral thesis, Technische Universität Dresden, 2019. https://tud.qucosa.de/id/qucosa%3A36877.
Повний текст джерелаLowman, Jennifer Lee. "School principal's views of No Child Left Behind, the achievement gap, and the student groups assessed by NCLB." abstract and full text PDF (free order & download UNR users only), 2005. http://0-gateway.proquest.com.innopac.library.unr.edu/openurl?url_ver=Z39.88-2004&rft_val_fmt=info:ofi/fmt:kev:mtx:dissertation&res_dat=xri:pqdiss&rft_dat=xri:pqdiss:1433376.
Повний текст джерелаLiu, Shuhao. "Electronic Transport in Functional Materials and Two-Dimensional Hole System." Case Western Reserve University School of Graduate Studies / OhioLINK, 2018. http://rave.ohiolink.edu/etdc/view?acc_num=case1522893320666086.
Повний текст джерелаGozcu, Ferhat Can. "Estimation Of Steady-state Temperature Distribution In Power Transformer By Using Finite Difference Method." Master's thesis, METU, 2010. http://etd.lib.metu.edu.tr/upload/3/12611592/index.pdf.
Повний текст джерелаHadiya, Maheshkumar. "Case study of offshore wind farm integration to offshore oil and gas platforms as an isolated system - System Topologies, Steady State and Dynamic Aspects." Thesis, Norges teknisk-naturvitenskapelige universitet, Institutt for elkraftteknikk, 2011. http://urn.kb.se/resolve?urn=urn:nbn:no:ntnu:diva-14148.
Повний текст джерелаCardwell, Drew. "Investigation of electrically-active defects in AlGaN/GaN high electron mobility transistors by spatially-resolved spectroscopic scanned probe techniques." The Ohio State University, 2013. http://rave.ohiolink.edu/etdc/view?acc_num=osu1373894407.
Повний текст джерелаBalaguer, Ramírez María. "New solid state oxygen and hydrogen conducting materials. Towards their applications as high temperature electrochemical devices and gas separation membranes." Doctoral thesis, Universitat Politècnica de València, 2013. http://hdl.handle.net/10251/31654.
Повний текст джерелаMixed ionic (oxygen ions or protons) and electronic conducting materials (MIEC) separate oxygen or hydrogen from flue gas or reforming streams at high temperature in a process 100% selective to the ion. These solid oxide materials may be used in the production of electricity from fossil fuels (coal or natural gas), taking part of the CO2 separation and storage system. Dense oxygen transport membranes (OTM) can be used in oxyfuel combustion plants or in catalytic membrane reactors (CMR), while hydrogen transport membranes (HTM) would be applied in precombustion plants. Furthermore, these materials may also be used in components for energy systems, as advanced electrodes or electrolytes for solid oxide fuel cells (SOFC) and proton conducting solid oxide fuel cells (PCSOFC) working at high and moderate temperature. The harsh working conditions stablished by the targeted processes include high temperatures and low O2 partial pressures (pO2), probably combined with CO2 and SO2 containing gases. The instability disadvantages presented by the most widely studied materials for these purposes make them impractical for application to gas separation. Thus, the need to discover new stable inorganic materials providing high electronic and ionic conductivity is still present. This thesis presents a systematic search for new mixed ionic-electronic conductors. It includes different crystalline structures and/or composition of the crystal lattice, varying the nature of the elements and the stoichiometry of the crystal. The research has yielded new materials capable to transport oxygen ions or protons and electronic carriers that are stable in the working condition to which they are submitted.
Balaguer Ramírez, M. (2013). New solid state oxygen and hydrogen conducting materials. Towards their applications as high temperature electrochemical devices and gas separation membranes [Tesis doctoral no publicada]. Universitat Politècnica de València. https://doi.org/10.4995/Thesis/10251/31654
TESIS
Premiado
Binus, Joshua D. "Bonneville Power Administration and the Creation of the Pacific Intertie, 1958 -1964." PDXScholar, 2008. https://pdxscholar.library.pdx.edu/open_access_etds/1724.
Повний текст джерелаKing, Graham Missell. "Structural, Magnetic, and Electronic Studies of Complex Perovskites." The Ohio State University, 2009. http://rave.ohiolink.edu/etdc/view?acc_num=osu1262114272.
Повний текст джерелаGoble, Nicholas James. "ELECTRONIC TRANSPORT AT SEMICONDUCTOR AND PEROVSKITE OXIDE INTERFACES." Case Western Reserve University School of Graduate Studies / OhioLINK, 2016. http://rave.ohiolink.edu/etdc/view?acc_num=case1454002713.
Повний текст джерелаHaidara, Modibo. "Impulsions de Trichel dans le cyclohexane liquide et les gaz comprimés." Grenoble 1, 1988. http://www.theses.fr/1988GRE10160.
Повний текст джерелаWiddifield, Cory. "Multinuclear Solid-State Magnetic Resonance Studies on ‘Exotic’ Quadrupolar Nuclei: Acquisition Methods, High-Order Effects, Quantum Chemical Computations, and NMR Crystallography." Thèse, Université d'Ottawa / University of Ottawa, 2012. http://hdl.handle.net/10393/20722.
Повний текст джерелаGina, Ervin. "Implementation and Optimization of an Inverse Photoemission Spectroscopy Setup." Scholar Commons, 2012. http://scholarcommons.usf.edu/etd/4050.
Повний текст джерелаTeatro, Timothy A. V. "Dynamical effects in crystalline solid state systems: theory of temperature dependent optical response of bulk gaAs and vibrational modification of C(111) 2 x 1 Surface in Comparison to Experiment." Thesis, UOIT, 2009. http://hdl.handle.net/10155/33.
Повний текст джерелаM'AHAMEDI, OMAR. "Contribution a l'etude de l'interaction de l'hydrogene atomique avec les faces (110) et (100) de gaas et inp." Paris 6, 1987. http://www.theses.fr/1987PA066526.
Повний текст джерелаSahli, Salah. "Etude du comportement electrique de films minces de gaas amorphes ou polycristallins elabores par depots en phase vapeur ou par plasma a partir d'organometalliques." Toulouse 3, 1986. http://www.theses.fr/1986TOU30049.
Повний текст джерелаMandray, Ariane. "Etude magnéto-optique de centres D- confinés dans des multi-puits quantiques GaAs/AlGaAs." Université Joseph Fourier (Grenoble), 1994. http://www.theses.fr/1994GRE10075.
Повний текст джерелаChomette, André. "Proprietes electroniques et optiques des superreseaux gaas/gaalas de petites periodes." Paris 6, 1988. http://www.theses.fr/1988PA066146.
Повний текст джерелаGIGNOUX, CLAIRE. "Etude des proprietes electroniques de l'alliage quasicristallin alpdre." Université Joseph Fourier (Grenoble), 1996. http://www.theses.fr/1996GRE10233.
Повний текст джерелаMontpied, Sylvie. "Contribution a l'etude de la passivation de composants sur arseniure de gallium : caracterisation de films dielectriques realises par depot en phase vapeur assiste par plasma." Clermont-Ferrand 2, 1986. http://www.theses.fr/1986CLF21020.
Повний текст джерела