Добірка наукової літератури з теми "Electron doping induced metal-insulator transition"
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Статті в журналах з теми "Electron doping induced metal-insulator transition"
FARKAŠOVSKÝ, PAVOL, and HANA ČENČARIKOVÁ. "VALENCE AND METAL-INSULATOR TRANSITIONS IN THE SPINLESS FALICOV–KIMBALL MODEL INDUCED BY DOPING." International Journal of Modern Physics B 19, no. 23 (September 20, 2005): 3603–12. http://dx.doi.org/10.1142/s0217979205032395.
Повний текст джерелаBustarret, E., P. Achatz, B. Sacépé, C. Chapelier, C. Marcenat, L. Ortéga, and T. Klein. "Metal-to-insulator transition and superconductivity in boron-doped diamond." Philosophical Transactions of the Royal Society A: Mathematical, Physical and Engineering Sciences 366, no. 1863 (November 19, 2007): 267–79. http://dx.doi.org/10.1098/rsta.2007.2151.
Повний текст джерелаPiatti, Erik, Jessica Montagna Bozzone, and Dario Daghero. "Anomalous Metallic Phase in Molybdenum Disulphide Induced via Gate-Driven Organic Ion Intercalation." Nanomaterials 12, no. 11 (May 27, 2022): 1842. http://dx.doi.org/10.3390/nano12111842.
Повний текст джерелаHuang, X. Z., A. Saxena, and A. R. Bishop. "Doping induced insulator-metal transition in the platinum based MX complexes." Synthetic Metals 56, no. 2-3 (April 1993): 3438–42. http://dx.doi.org/10.1016/0379-6779(93)90141-i.
Повний текст джерелаRaveau, B., A. Maignan, and C. Martin. "Insulator–Metal Transition Induced by Cr and Co Doping in Pr0.5Ca0.5MnO3." Journal of Solid State Chemistry 130, no. 1 (April 1997): 162–66. http://dx.doi.org/10.1006/jssc.1997.7373.
Повний текст джерелаWen, Zhiyuan, Jiaheng Li, Ziqiang Wang, Yong Xu, and Jing Zhu. "Soft-mode-phonon-mediated insulator–superconductor transition in doped two-dimensional topological insulator RuC." Applied Physics Letters 121, no. 1 (July 4, 2022): 013102. http://dx.doi.org/10.1063/5.0095044.
Повний текст джерелаOVCHINNIKOV, S. G. "THE NATURE OF THE IN-GAP STATES IN WEAKLY DOPED La2−x Srx CuO4." Modern Physics Letters B 06, no. 30 (December 30, 1992): 1927–33. http://dx.doi.org/10.1142/s0217984992001630.
Повний текст джерелаWang, Helin, William M. Postiglione, Vipul Chaturvedi, Evan L. Runnerstrom, Angela Cleri, Josh Nordlander, Jon-Paul Maria, and Chris Leighton. "Electrolyte-gate-driven carrier density modulation and metal–insulator transition in semiconducting epitaxial CdO films." APL Materials 10, no. 12 (December 1, 2022): 121106. http://dx.doi.org/10.1063/5.0116294.
Повний текст джерелаAnggarini, Ufafa, Liang Yu, Hiroki Nagasawa, Masakoto Kanezashi, and Toshinori Tsuru. "Metal-induced microporous aminosilica creates a highly permeable gas-separation membrane." Materials Chemistry Frontiers 5, no. 7 (2021): 3029–42. http://dx.doi.org/10.1039/d1qm00009h.
Повний текст джерелаLi, Bowen, Liyan Xie, Zhaowu Wang, Shi Chen, Hui Ren, Yuliang Chen, Chengming Wang, Guobin Zhang, Jun Jiang, and Chongwen Zou. "Electron–Proton Co‐doping‐Induced Metal–Insulator Transition in VO 2 Film via Surface Self‐Assembled l ‐Ascorbic Acid Molecules." Angewandte Chemie International Edition 58, no. 39 (September 23, 2019): 13711–16. http://dx.doi.org/10.1002/anie.201904148.
Повний текст джерелаДисертації з теми "Electron doping induced metal-insulator transition"
Lin, Geng-Li, and 林耕立. "Electron-phonon interaction induced high-temperature metal-insulator transition in few-layer MoS2." Thesis, 2016. http://ndltd.ncl.edu.tw/handle/22075355936770273836.
Повний текст джерела國立交通大學
電子物理系所
104
In this study, we exfoliate mechanically few-layer molybdenum disulfide (MoS2) flakes on silicon substrate capped with 300-nm thick silicon dioxide layer. The standard methods electron beam lithography and thermal evaporation were used to make a pattern of Au electrodes on MoS2 flakes. The patterned devices of MoS2 field effect transistor (FET) were then annealed in a high vacuum to reduce the contact resistance. Through electrical characterizations, we have studied the mobility and conductivity in a wide temperature range from 80 K to 600 K. The mobility of our MoS2 FET device is in the range of 5-150 cm2V-1s-1 at room temperature. In addition, their on/off ratios are of 106-108. As the temperature is lower than 200 K, the MoS2 FET devices show an insulating to metallic phase transition when the carrier concentration is increased by a positive back-gate voltage. The metal-to-insulator transition occurs at the device conductivity very close to the ideal value of e2/h. The transition could be attributed to strong electron-electron interaction in this special two dimensional material. The electron transport of MoS2, at temperatures between 80 and 200 K, is well described by the theory of two-dimensional variable range hopping, whereas that at temperatures between 250 and 350 K is well described by thermally activated transport. At zero back-gate voltage, the few-layer MoS2 exhibits a temperature behavior like semiconductor. When the temperature is higher than 450 K, the few-layer MoS2 changes its semiconducting behavior to metallic behavior. It shows another transition of an insulating to a metallic phase. In this temperature range, the resistance of few-layer MoS2 FET devices rises linearly with increasing temperature and the temperature coefficient of resistance is 0.016 K-1. This metal-to-insulator transition could be attributed to electron-phonon interaction.
Книги з теми "Electron doping induced metal-insulator transition"
Stafström, Sven, and Mikael Unge. Disorder-induced electron localization in molecular-based materials. Edited by A. V. Narlikar and Y. Y. Fu. Oxford University Press, 2017. http://dx.doi.org/10.1093/oxfordhb/9780199533046.013.25.
Повний текст джерелаЧастини книг з теми "Electron doping induced metal-insulator transition"
Hemberger, J., M. Paraskevoupolos, J. Sichelschmidt, M. Brando, R. Wehn, F. Mayr, K. Pucher, et al. "Field Induced Metal-Insulator Transition in (Pr:Ca:Sr)MnO3." In Open Problems in Strongly Correlated Electron Systems, 247–52. Dordrecht: Springer Netherlands, 2001. http://dx.doi.org/10.1007/978-94-010-0771-9_25.
Повний текст джерелаZhang, Yiming, Yuanfeng Xu, Yujie Xia, Juan Zhang, Hao Zhang, and Desheng Fu. "Photo-Induced Displacive Phase Transition in Two-dimensional MoTe2 from First-Principle Calculations." In Phase Change Materials - Technology and Applications [Working Title]. IntechOpen, 2022. http://dx.doi.org/10.5772/intechopen.108460.
Повний текст джерелаТези доповідей конференцій з теми "Electron doping induced metal-insulator transition"
Hishida, Tomoko, Kazusige Ohbayashi, Mario Okawa, and Tomohiko Saitoh. "Electronic Structure Evolution of La0.6Sr0.4Mn1−yNbyO3across a Metal-Insulator Transition by Nb Doping." In Proceedings of the International Conference on Strongly Correlated Electron Systems (SCES2013). Journal of the Physical Society of Japan, 2014. http://dx.doi.org/10.7566/jpscp.3.013022.
Повний текст джерелаAli, Anzar, Jaskaran Singh, and R. K. Gopal. "Doping-induced metal to insulator transition and the thermal transport properties in germanium." In DAE SOLID STATE PHYSICS SYMPOSIUM 2018. AIP Publishing, 2019. http://dx.doi.org/10.1063/1.5113292.
Повний текст джерелаKayama, Shuei, Shigeki Tanaka, Atsushi Miyake, Tomoko Kagayama, Katsuya Shimizu, and Fumitoshi Iga. "Pressure Induced Insulator-to-Metal Transition at 170 GPa of Kondo Semiconductor YbB12." In Proceedings of the International Conference on Strongly Correlated Electron Systems (SCES2013). Journal of the Physical Society of Japan, 2014. http://dx.doi.org/10.7566/jpscp.3.012024.
Повний текст джерелаRini, M. "Photo-induced insulator-to-metal phase transition in nanocrystals of strongly correlated electron systems." In International Quantum Electronics Conference, 2005. IEEE, 2005. http://dx.doi.org/10.1109/iqec.2005.1560840.
Повний текст джерелаTateiwa, Naoyuki, Yoshinori Haga, Etsuji Yamamoto та Zachary Fisk. "Drastic Change in Ferromagnetic Ground State Associated with Pressure-Induced Metal-Insulator Transition in β-US2". У Proceedings of the International Conference on Strongly Correlated Electron Systems (SCES2013). Journal of the Physical Society of Japan, 2014. http://dx.doi.org/10.7566/jpscp.3.011086.
Повний текст джерелаChang, Ruxia, Desong Fan, and Qiang Li. "Research on Thermal Properties of Insulator-Metal Transition at Room Temperature in Sm1-xCaxMnO3." In ASME 2019 6th International Conference on Micro/Nanoscale Heat and Mass Transfer. American Society of Mechanical Engineers, 2019. http://dx.doi.org/10.1115/mnhmt2019-3963.
Повний текст джерелаZhai, Zhao-Hui, Liang-Hui Du, Si-Chao Chen, and Li-Guo Zhu. "Competing Interplay of Photo-thermal and Photo-doping Effect during Light-induced Ultrafast Insulator-to-Metal Transition in VO2 Nanofilms at Terahertz Frequency." In 2019 44th International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz). IEEE, 2019. http://dx.doi.org/10.1109/irmmw-thz.2019.8874511.
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