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Статті в журналах з теми "Electromigration-thermomigration"

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Автор: Grafiati

Опубліковано: 6 вересня 2023

Оновлено: 7 вересня 2023

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1

Yang, D., Y. C. Chan, B. Y. Wu, and M. Pecht. "Electromigration and thermomigration behavior of flip chip solder joints in high current density packages." Journal of Materials Research 23, no. 9 (September 2008): 2333–39. http://dx.doi.org/10.1557/jmr.2008.0305.

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Анотація:

The electromigration and thermomigration behavior of eutectic tin-lead flip chip solder joints, subjected to currents ranging from 1.6 to 2.0 A, at ambient temperatures above 100 °C, was experimentally and numerically studied. The temperature at the chip side was monitored using both a temperature coefficient of resistance method and a thermal infrared technique. The electron wind force and thermal gradient played the dominant role in accelerated atomic migration. The atomic flux of lead due to electromigration and thermomigration was estimated for comparison. At the current crowding region, electromigration induced a more serious void accumulation as compared with thermomigration. Also, because of different thermal dissipations, a morphological variation was detected at different cross-sectional planes of the solder joint during thermomigration.

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2

Abdulhamid, Mohd F., Cemal Basaran, and Yi-Shao Lai. "Thermomigration Versus Electromigration in Microelectronics Solder Joints." IEEE Transactions on Advanced Packaging 32, no. 3 (August 2009): 627–35. http://dx.doi.org/10.1109/tadvp.2009.2018293.

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3

Shidong Li, Mohd F. Abdulhamid, and Cemal Basaran. "Simulating Damage Mechanics of Electromigration and Thermomigration." SIMULATION 84, no. 8-9 (August 2008): 391–401. http://dx.doi.org/10.1177/0037549708094856.

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4

Yao, Wei, and Cemal Basaran. "Computational damage mechanics of electromigration and thermomigration." Journal of Applied Physics 114, no. 10 (September 14, 2013): 103708. http://dx.doi.org/10.1063/1.4821015.

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5

Gu, Xin, and Y. C. Chan. "Thermomigration and electromigration in Sn58Bi solder joints." Journal of Applied Physics 105, no. 9 (May 2009): 093537. http://dx.doi.org/10.1063/1.3125458.

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6

Gu, X., K. C. Yung, Y. C. Chan, and D. Yang. "Thermomigration and electromigration in Sn8Zn3Bi solder joints." Journal of Materials Science: Materials in Electronics 22, no. 3 (April 18, 2010): 217–22. http://dx.doi.org/10.1007/s10854-010-0116-9.

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7

Dohle, Rainer, Stefan Härter, Andreas Wirth, Jörg Goßler, Marek Gorywoda, Andreas Reinhardt та Jörg Franke. "Electromigration Performance of Flip-Chips with Lead-Free Solder Bumps between 30 μm and 60 μm Diameter". International Symposium on Microelectronics 2012, № 1 (1 січня 2012): 000891–905. http://dx.doi.org/10.4071/isom-2012-wp41.

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Анотація:

As the solder bump sizes continuously decrease with scaling of the geometries, current densities within individual solder bumps will increase along with higher operation temperatures of the dies. Since electromigration of flip-chip interconnects is highly affected by these factors and therefore an increasing reliability concern, long-term characterization of new interconnect developments needs to be done regarding the electromigration performance using accelerated life tests. Furthermore, a large temperature gradient exists across the solder interconnects, leading to thermomigration. In this study, a comprehensive overlook of the long-term reliability and analysis of the achieved electromigration performance of flip-chip test specimen will be given, supplemented by an in-depth material science analysis. In addition, the challenges to a better understanding of electromigration and thermomigration in ultra fine-pitch flip-chip solder joints are discussed. For all experiments, specially designed flip-chips with a pitch of 100 μm and solder bump diameters of 30–60 μm have been used [1]. Solder spheres can be made of every lead-free alloy (in our case SAC305) and are placed on a UBM which has been realized for our test chips in an electroless nickel process [2]. For the electromigration tests within this study, multiple combinations of individual current densities and temperatures were adapted to the respective solder sphere diameters. Online measurements over a time period up to 10,000 hours with separate daisy chain connections of each test coupon provide exact lifetime data during the electromigration tests. As failure modes have been identified: UBM consumption at the chip side or depletion of the Nickel layer at the substrate side, interfacial void formation at the cathode contact interface, and - to a much lesser degree - Kirkendall-like void formation at the anode side. A comparison between calculated life time data using Weibull distribution and lognormal distribution will be given.

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8

Shidong Li, M. F. Abdulhamid, and C. Basaran. "Damage Mechanics of Low Temperature Electromigration and Thermomigration." IEEE Transactions on Advanced Packaging 32, no. 2 (May 2009): 478–85. http://dx.doi.org/10.1109/tadvp.2008.2005840.

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9

Lin, Y. H., C. M. Tsai, Y. C. Hu, Y. L. Lin, J. Y. Tsai, and C. R. Kao. "Electromigration Induced Metal Dissolution in Flip-Chip Solder Joints." Materials Science Forum 475-479 (January 2005): 2655–58. http://dx.doi.org/10.4028/www.scientific.net/msf.475-479.2655.

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The failure of flip chip solder joints through the dissolution of the Cu metallization was studied. From the location and geometry of the dissolved Cu, it can be concluded that current crowding played a critical role in the dissolution. It can also be concluded that temperature, as an experimental variable, is not less import than the current density in electromigration study. Experimentally, no evidence of mass transport due to thermomigration was observed.

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10

Somaiah, Nalla, and Praveen Kumar. "Tuning electromigration-thermomigration coupling in Cu/W Blech structures." Journal of Applied Physics 124, no. 18 (November 14, 2018): 185102. http://dx.doi.org/10.1063/1.5045086.

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11

Chen, Chih, H. M. Tong, and K. N. Tu. "Electromigration and Thermomigration in Pb-Free Flip-Chip Solder Joints." Annual Review of Materials Research 40, no. 1 (June 2010): 531–55. http://dx.doi.org/10.1146/annurev.matsci.38.060407.130253.

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12

Basaran, Cemal, and Mohd F. Abdulhamid. "Low temperature electromigration and thermomigration in lead-free solder joints." Mechanics of Materials 41, no. 11 (November 2009): 1223–41. http://dx.doi.org/10.1016/j.mechmat.2009.07.004.

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13

Gu, X., K. C. Yung, and Y. C. Chan. "Thermomigration and electromigration in Sn58Bi ball grid array solder joints." Journal of Materials Science: Materials in Electronics 21, no. 10 (October 13, 2009): 1090–98. http://dx.doi.org/10.1007/s10854-009-9992-2.

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14

Basaran, C., H. Ye, D. C. Hopkins, D. Frear, and J. K. Lin. "Failure Modes of Flip Chip Solder Joints Under High Electric Current Density." Journal of Electronic Packaging 127, no. 2 (September 15, 2004): 157–63. http://dx.doi.org/10.1115/1.1898338.

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Анотація:

The failure modes of flip chip solder joints under high electrical current density are studied experimentally. Three different failure modes are reported. Only one of the failure modes is caused by the combined effect of electromigration and thermomigration, where void nucleation and growth contribute to the ultimate failure of the module. The Ni under bump metallization–solder joint interface is found to be the favorite site for void nucleation and growth. The effect of pre-existing voids on the failure mechanism of a solder joint is also investigated

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15

Tu, K. N., and A. N. Gusak. "Mean-Time-To-Failure Equations for Electromigration, Thermomigration, and Stress Migration." IEEE Transactions on Components, Packaging and Manufacturing Technology 10, no. 9 (September 2020): 1427–31. http://dx.doi.org/10.1109/tcpmt.2020.3003003.

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16

Ichinokawa, T., C. Haginoya, D. Inoue, and H. Itoh. "Electromigration and thermomigration of metallic islands on the Si(100) surface." Journal of Physics: Condensed Matter 5, no. 33A (August 16, 1993): A405—A406. http://dx.doi.org/10.1088/0953-8984/5/33a/152.

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17

Chiu, Tsung-Chieh, and Kwang-Lung Lin. "Electromigration behavior of the Cu/Au/SnAgCu/Cu solder combination." Journal of Materials Research 23, no. 1 (January 2008): 264–73. http://dx.doi.org/10.1557/jmr.2008.0036.

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The electromigration behavior of the Cu/Au/SnAgCu/Cu combination was investigated under 103 A/cm2 of current stressing at ambient temperature. The Au layer, when it acts as a cathode, was consumed continuously, and no significant compound was found at the interface. Meanwhile, Cu6Sn5 was formed at the anodic Cu layer, and the thickness of the compound increased with increasing time. The Au atoms were found to be trapped in Cu6Sn5 within the solder matrix. The AuSn4 compound precipitated while attaching to Cu6Sn5 at the Cu6Sn5/solder interface. The thermomigration effect was found to be insignificant in this work as no obvious reaction occurred at the cathode/anode sides or in the solder matrix without current stressing.

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18

Somaiah, Nalla, and Praveen Kumar. "Effect of Thermomigration–Electromigration Coupling on Mass Transport in Cu Thin Films." Journal of Electronic Materials 49, no. 1 (September 23, 2019): 96–108. http://dx.doi.org/10.1007/s11664-019-07634-4.

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19

Feng, Dandan, Fengjiang Wang, Dongyang Li, Bin Wu, and Luting Liu. "Atomic migration on Cu in Sn-58Bi solder from the interaction between electromigration and thermomigration." Materials Research Express 6, no. 4 (January 7, 2019): 046301. http://dx.doi.org/10.1088/2053-1591/aaf91c.

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20

Zhang, Peng, Songbai Xue, and Jianhao Wang. "New challenges of miniaturization of electronic devices: Electromigration and thermomigration in lead-free solder joints." Materials & Design 192 (July 2020): 108726. http://dx.doi.org/10.1016/j.matdes.2020.108726.

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21

Shen, Yu-An, and John A. Wu. "Effect of Sn Grain Orientation on Reliability Issues of Sn-Rich Solder Joints." Materials 15, no. 14 (July 21, 2022): 5086. http://dx.doi.org/10.3390/ma15145086.

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Анотація:

Sn-rich solder joints in three-dimensional integrated circuits and their reliability issues, such as the electromigration (EM), thermomigration (TM), and thermomechanical fatigue (TMF), have drawn attention related to their use in electronic packaging. The Sn grain orientation is recognized as playing an important role in reliability issues due to its anisotropic diffusivity, mechanical properties, and coefficient of thermal expansion. This study reviews the effects of the Sn grain orientation on the EM, TM, and TMF in Sn-rich solder joints. The findings indicate that in spite of the failure modes dominated by the Sn grain orientation, the size and shape of the solder joint, as well as the Sn microstructures, such as the cycling twining boundary (CTB), single crystals, and misorientations of the Sn grain boundary, should be considered in more detail. In addition, we show that two methods, involving a strong magnetic field and seed crystal layers, can control the Sn grain orientations during the solidification of Sn-rich solder joints.

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22

Becker, H., D. Heger, A. Leineweber, and David Rafaja. "Modification of the Diffusion Process in the Iron-Aluminum System via Spark Plasma Sintering/Field Assisted Sintering Technology." Defect and Diffusion Forum 367 (April 2016): 1–9. http://dx.doi.org/10.4028/www.scientific.net/ddf.367.1.

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The influence of Spark Plasma Sintering / Field Assisted Sintering Technology applying pulsed direct current up to the root-mean-square current densities of 129 A/cm2 on the interfacial reactions in Al - Fe - Al stacks was investigated at temperatures between 500°C and 600°C. Independently of the current density and current direction, thin Al13Fe4 and wide Al5Fe2 phases were detected in the diffusion couples. The Al5Fe2 phase consisted of columnar grains having a {001}-fiber texture. Al13Fe4 was found in the form of discontinuous spots at the Al/Al5Fe2 interface. The interface between Al5Fe2 and Fe was highly fringed. The layer growth kinetics of Al5Fe2 was parabolic. The growth rate was strongly enhanced in the SPS/FAST experiments as compared to the conventional diffusion experiments, independently, on the current direction. It is suggested that the enhanced growth rates are a result of temperature gradients existing in a typical Spark Plasma Sintering device. Possible effects of thermomigration and electromigration are discussed.

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23

Baek, Sung-Min, Yujin Park, Cheolmin Oh, Eun-Joon Chun, and Namhyun Kang. "Modeling and Experimental Verification of Intermetallic Compounds Grown by Electromigration and Thermomigration for Sn-0.7Cu Solders." Journal of Electronic Materials 48, no. 1 (November 26, 2018): 142–51. http://dx.doi.org/10.1007/s11664-018-6786-4.

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24

Yao, Wei, and Cemal Basaran. "Damage mechanics of electromigration and thermomigration in lead-free solder alloys under alternating current: An experimental study." International Journal of Damage Mechanics 23, no. 2 (May 6, 2013): 203–21. http://dx.doi.org/10.1177/1056789513488396.

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25

Kim, Seung-Hyun, Gyu-Tae Park, Jong-Jin Park, and Young-Bae Park. "Effects of Annealing, Thermomigration, and Electromigration on the Intermetallic Compounds Growth Kinetics of Cu/Sn-2.5Ag Microbump." Journal of Nanoscience and Nanotechnology 15, no. 11 (November 1, 2015): 8593–600. http://dx.doi.org/10.1166/jnn.2015.11502.

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26

Chen, Hsiao-Yun, and Chih Chen. "Thermomigration of Cu–Sn and Ni–Sn intermetallic compounds during electromigration in Pb-free SnAg solder joints." Journal of Materials Research 26, no. 8 (March 30, 2011): 983–91. http://dx.doi.org/10.1557/jmr.2011.25.

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27

Guo, Fu, Qian Liu, Limin Ma, and Yong Zuo. "Diffusion behavior of Sn atoms in Sn58Bi solder joints under the coupling effect of thermomigration and electromigration." Journal of Materials Research 31, no. 12 (April 15, 2016): 1793–800. http://dx.doi.org/10.1557/jmr.2016.145.

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28

Kimura, Yasuhiro, and Yang Ju. "Equilibrium current density balancing two atomic flows in coupled problems of electromigration and thermomigration in unpassivated gold film." AIP Advances 10, no. 8 (August 1, 2020): 085125. http://dx.doi.org/10.1063/5.0011417.

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29

Tu, K. N., and A. M. Gusak. "A unified model of mean-time-to-failure for electromigration, thermomigration, and stress-migration based on entropy production." Journal of Applied Physics 126, no. 7 (August 21, 2019): 075109. http://dx.doi.org/10.1063/1.5111159.

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30

Huang, Annie T., K. N. Tu, and Yi-Shao Lai. "Effect of the combination of electromigration and thermomigration on phase migration and partial melting in flip chip composite SnPb solder joints." Journal of Applied Physics 100, no. 3 (August 2006): 033512. http://dx.doi.org/10.1063/1.2227621.

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31

Sung, Po-Hsien, and Tei-Chen Chen. "Material Properties of Zr–Cu–Ni–Al Thin Films as Diffusion Barrier Layer." Crystals 10, no. 6 (June 24, 2020): 540. http://dx.doi.org/10.3390/cryst10060540.

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Анотація:

Due to the rapid increase in current density encountered in new chips, the phenomena of thermomigration and electromigration in the solder bump become a serious reliability issue. Currently, Ni or TiN, as a barrier layer, is widely academically studied and industrially accepted to inhibit rapid copper diffusion in interconnect structures. Unfortunately, these barrier layers are polycrystalline and provide inadequate protection because grain boundaries may presumably serve as fast diffusion paths for copper and could react to form Cu–Sn intermetallic compounds (IMCs). Amorphous metallic films, however, have the potential to be the most effective barrier layer for Cu metallization due to the absence of grain boundaries and immiscibility with copper. In this article, the diffusion properties, the strength of the interface between polycrystalline and amorphous ZrCuNiAl thin film, and the effects of quenching rate on the internal microstructures of amorphous metal films were individually investigated by molecular dynamics (MD) simulation. Moreover, experimental data of the diffusion process for three different cases, i.e., without barrier layer, with an Ni barrier layer, and with a Zr53Cu30Ni9Al8 thin film metallic glass (TFMG) barrier layer, were individually depicted. The simulation results show that, for ZrCuNiAl alloy, more than 99% of the amorphous phase at a quenching rate between 0.25 K/ps and 25 K/ps can be obtained, indicating that this alloy has superior glass-forming ability. The simulation of diffusion behavior indicated that a higher amorphous ratio resulted in better barrier performance. Moreover, a very small and uniformly distributed strain appears in the ZrCuNiAl layer in the simulation of the interfacial tension test; however, almost all the voids are initiated and propagated in the Cu layer. These phenomena indicate that the strength of the ZrCuNiAl/Cu interface and ZrCuNiAl layer is greater than polycrystalline Cu. Experimental results show that the Zr53Cu30Ni9Al8 TFMG layer exhibits a superior barrier effect. Almost no IMCs appear in this TFMG barrier layer even after aging at 125 °C for 500 h.

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32

Li, Feng, Andrew W. Owens, and Qianyi Li. "Microbump Processing for 3D IC Integration." Additional Conferences (Device Packaging, HiTEC, HiTEN, and CICMT) 2019, DPC (January 1, 2019): 001028–49. http://dx.doi.org/10.4071/2380-4491-2019-dpc-presentation_wp2_049.

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In recent years, the development of microbumps has allowed even smaller sizes of ICs to utilize the flip chip technique. In addition, microbumps have enabled the implementation of three-dimensional (3D) ICs, which drastically improve the spatial efficiency of packaging. However, as the bumps size decreases and the number increases, several process challenges must be considered, for example, the height consistency of bump, the ratio of miss and deformity bump and the yield and strength of interconnection, etc. Therefore, it is increasingly important to study the interconnection technology and materials of high-density microbump interconnection. After briefly introducing the common electronic packaging techniques, including wire bonding, tape-automated bonding and flip chip, this paper reviews microbumps as an advanced bonding technology. Techniques such as Controlled Collapse Chip Connection - New Process(C4NP), printing, insert bump bonding, and self-replication process are discussed and compared. C4NP can achieve low-cost, fine pitch bumping by utilizing varied lead-free solder alloys, which overcomes the limitation of existing bumping technologies. Depending on the microbump size, engraved mask stump, and photosensitive organic mask and squeegee are the two ways for micro-bump printing. The micro-insert bump bonding process is new to stack chips vertically, which has robust bonding structure and a simpler bonding process compared to Cu pillar bonding process. The self-replication process is using the surface tension property of molten solder between the micro bridged bump to get two bumps with same volume and geometries on each faced pairs of lands. The use of two common material for the microbump, Cu, Sn, and its alloys are presented along with the differences in the process for each. As with any technology, a new breakthrough addressing an issue brings with it its own set of shortfalls. Microbumps are no different. The various techniques and materials used to realize the reduced scale bonding method are subject to a number of challenges. Most prominent among them are electromigration, thermomigration, and thermallyinduced mechanical fatigue, which are discussed in this paper.

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33

Domenicucci, A. G., B. Cunningham, and P. Tsang. "Characterization of Electrically Pulsed Chromium Disilicide Fusible Links." MRS Proceedings 523 (1998). http://dx.doi.org/10.1557/proc-523-103.

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AbstractFusible links, fabricated from silicon rich chromium disilicide thin films, were subjected to voltage pulses in the 3–6 volt range. An optimum voltage existed at which the fuses blew. Transmission electron microscopy (TEM) was used to study the microstructural characteristics of the fuses both before and after the application of the voltage pulses. The TEM characterization, coupled with electrical and physical measurements, revealed that the mechanism underlying the fuse blow was hole current induced Si electromigration. Below the optimum voltage, the amount of Si transported was insufficient to cause fuse rupture. Above the optimum voltage, the current- voltage characteristics of the fuses became nonlinear and a unique sequence of material phases was formed. The composition of the phases suggests that both thermomigration and electromigration processes were operating at voltages above the optimum voltage.

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34

Cui, Zhen, Xuejun Fan, Yaqian Zhang, Sten Vollebregt, Jiajie Fan, and Guoqi Zhang. "Coupling Model of Electromigration and Experimental Verification – Part II: Impact of Thermomigration." Journal of the Mechanics and Physics of Solids, March 2023, 105256. http://dx.doi.org/10.1016/j.jmps.2023.105256.

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35

Chen, Liang, Sheldon X. D. Tan, Zeyu Sun, Shaoyi Peng, Min Tang, and Junfa Mao. "A Fast Semi-Analytic Approach for Combined Electromigration and Thermomigration Analysis for General Multi-Segment Interconnects." IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 2020, 1. http://dx.doi.org/10.1109/tcad.2020.2994271.

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36

"Abstracts: General References: Diffusion Processes, Electromigration, Thermomigration, Point Defects, Linear Defects, Planar Defects, Irradiation Effects, Ionic Conduction." Defect and Diffusion Forum 51-52 (January 1987): 275–310. http://dx.doi.org/10.4028/www.scientific.net/ddf.51-52.275.

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37

"General References, Diffusion Processes, Electromigration, Thermomigration, Point Deffects, Linear Defects, Planar Defects, Irradiation Effects and Ionic Conduction." Defect and Diffusion Forum 61 (January 1988): 189–232. http://dx.doi.org/10.4028/www.scientific.net/ddf.61.189.

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38

"General References, Diffusion Processes, Electromigration, Thermomigration, Point Defects, Linear Effects, Planar Defects, Irradiation Effects and Ionic Conduction." Defect and Diffusion Forum 64-65 (January 1989): 321–58. http://dx.doi.org/10.4028/www.scientific.net/ddf.64-65.321.

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39

"General References, Diffusion Processes, Electromigration, Thermomigration, Point Defects, Linear Defects, Planar Defects, Irradiation Effects and Ionic Conduction." Defect and Diffusion Forum 72-73 (January 1990): 265–88. http://dx.doi.org/10.4028/www.scientific.net/ddf.72-73.265.

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40

Semenov, A. S., J. Trapp, M. Nöthe, B. Kieback, and T. Wallmersperger. "Multi‐physics simulation and experimental investigation of the densification of metals by spark plasma sintering." Advanced Engineering Materials, August 9, 2023. http://dx.doi.org/10.1002/adem.202300764.

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Multi‐variant experimental investigations and multi‐physics microstructural modeling of the spark plasma sintering process of metallic powders have been performed up to a relative density of approximately 80 %. In comparison, the effect of sintering temperature, pressure and particle size on the interparticle contact area growth and axial shrinkage of cylindrical specimens of copper and nickel particles is measured in laboratory scaled tests. In the present research, for the first time all relevant for sintering phenomena were considered simultaneously: the fully coupled thermo‐electro‐mechanical modeling of the spark plasma sintering processes, additionally taking into account for lattice, grain boundary, surface diffusion, electromigration and thermomigration has been carried out. The computational analysis of various physical phenomena allows to identify dominant and insignificant mechanisms. The two‐level numerical simulation includes the modeling of the sintering setup at the macroscopic level and the neck formation process in particle chain systems at the microscopic level. The results of the numerical simulations show a very good agreement with the experimental data. Therefore, the impact of electrical and mechanical loads as well as of particle size on microscopic distribution of temperature, inelastic strain and on densification has been studied by the finite element simulations.This article is protected by copyright. All rights reserved.

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