Добірка наукової літератури з теми "Electromigration-thermomigration"
Оформте джерело за APA, MLA, Chicago, Harvard та іншими стилями
Ознайомтеся зі списками актуальних статей, книг, дисертацій, тез та інших наукових джерел на тему "Electromigration-thermomigration".
Біля кожної праці в переліку літератури доступна кнопка «Додати до бібліографії». Скористайтеся нею – і ми автоматично оформимо бібліографічне посилання на обрану працю в потрібному вам стилі цитування: APA, MLA, «Гарвард», «Чикаго», «Ванкувер» тощо.
Також ви можете завантажити повний текст наукової публікації у форматі «.pdf» та прочитати онлайн анотацію до роботи, якщо відповідні параметри наявні в метаданих.
Статті в журналах з теми "Electromigration-thermomigration"
Yang, D., Y. C. Chan, B. Y. Wu, and M. Pecht. "Electromigration and thermomigration behavior of flip chip solder joints in high current density packages." Journal of Materials Research 23, no. 9 (September 2008): 2333–39. http://dx.doi.org/10.1557/jmr.2008.0305.
Повний текст джерелаAbdulhamid, Mohd F., Cemal Basaran, and Yi-Shao Lai. "Thermomigration Versus Electromigration in Microelectronics Solder Joints." IEEE Transactions on Advanced Packaging 32, no. 3 (August 2009): 627–35. http://dx.doi.org/10.1109/tadvp.2009.2018293.
Повний текст джерелаShidong Li, Mohd F. Abdulhamid, and Cemal Basaran. "Simulating Damage Mechanics of Electromigration and Thermomigration." SIMULATION 84, no. 8-9 (August 2008): 391–401. http://dx.doi.org/10.1177/0037549708094856.
Повний текст джерелаYao, Wei, and Cemal Basaran. "Computational damage mechanics of electromigration and thermomigration." Journal of Applied Physics 114, no. 10 (September 14, 2013): 103708. http://dx.doi.org/10.1063/1.4821015.
Повний текст джерелаGu, Xin, and Y. C. Chan. "Thermomigration and electromigration in Sn58Bi solder joints." Journal of Applied Physics 105, no. 9 (May 2009): 093537. http://dx.doi.org/10.1063/1.3125458.
Повний текст джерелаGu, X., K. C. Yung, Y. C. Chan, and D. Yang. "Thermomigration and electromigration in Sn8Zn3Bi solder joints." Journal of Materials Science: Materials in Electronics 22, no. 3 (April 18, 2010): 217–22. http://dx.doi.org/10.1007/s10854-010-0116-9.
Повний текст джерелаDohle, Rainer, Stefan Härter, Andreas Wirth, Jörg Goßler, Marek Gorywoda, Andreas Reinhardt та Jörg Franke. "Electromigration Performance of Flip-Chips with Lead-Free Solder Bumps between 30 μm and 60 μm Diameter". International Symposium on Microelectronics 2012, № 1 (1 січня 2012): 000891–905. http://dx.doi.org/10.4071/isom-2012-wp41.
Повний текст джерелаShidong Li, M. F. Abdulhamid, and C. Basaran. "Damage Mechanics of Low Temperature Electromigration and Thermomigration." IEEE Transactions on Advanced Packaging 32, no. 2 (May 2009): 478–85. http://dx.doi.org/10.1109/tadvp.2008.2005840.
Повний текст джерелаLin, Y. H., C. M. Tsai, Y. C. Hu, Y. L. Lin, J. Y. Tsai, and C. R. Kao. "Electromigration Induced Metal Dissolution in Flip-Chip Solder Joints." Materials Science Forum 475-479 (January 2005): 2655–58. http://dx.doi.org/10.4028/www.scientific.net/msf.475-479.2655.
Повний текст джерелаSomaiah, Nalla, and Praveen Kumar. "Tuning electromigration-thermomigration coupling in Cu/W Blech structures." Journal of Applied Physics 124, no. 18 (November 14, 2018): 185102. http://dx.doi.org/10.1063/1.5045086.
Повний текст джерелаДисертації з теми "Electromigration-thermomigration"
Ou, Yang Fan-Yi. "Electromigration and thermomigration in Pb-free SnAgCu and eutectic SnPb flip chip solder joints." Diss., Restricted to subscribing institutions, 2007. http://proquest.umi.com/pqdweb?did=1495962721&sid=1&Fmt=2&clientId=1564&RQT=309&VName=PQD.
Повний текст джерелаMeinshausen, Lutz. "Modelling the SAC microstructure evolution under thermal, thermo-mechanical and electronical constraints." Thesis, Bordeaux, 2014. http://www.theses.fr/2014BORD0149/document.
Повний текст джерелаA further miniaturization of microelectronic components by three dimensionalpackaging, as well as the use of microelectronic devices under harsh environmentconditions, requires the development of more robust alternatives to the existing Snbased solder joints. One promising technique is the diffusion and migration driventransformation of conventional solder bumps into intermetallic compound (IMC)connections. The related process is called transient liquid phase soldering (TLPS).Against this background an investigation of the IMC formation under consideration ofelectromigration and thermomigration was performed. For the stress tests Packageon Package structures are used. The final result is a general model for the IMCformation in solder joints. Combined with a Finite Element Analysis (FEA) this modelis used to predict the IMC formation in solder joints for a broad range of boundaryconditions. In future the model of the IMC formation can be used to optimize a TLPSprocess
El, Barraj Ali. "Growth and electro-thermomigration on semiconductor surfaces by low energy electron microscopy." Thesis, Aix-Marseille, 2019. http://www.theses.fr/2019AIXM0393.
Повний текст джерелаThis thesis is focused on the study of the growth, electromigration and thermomigration of nanostructures on the surface of semiconductors such as Si(100), Si(111) and Ge(111). On an experimental viewpoint, Low Energy Electron Microscopy (LEEM) allows us to access to the dynamics of the phenomena in situ and in real time. We have studied under electromigration and thermomigration the motions of 2D monoatomic holes and islands on the Si (100) surface. We have shown that diffusion anisotropy due to (2x1) and (1x2) surface reconstructions can affect the direction of motion of nanostructures. We have also studied electromigration and thermomigration of Si (111) surface. We show that 2D-(1x1) holes in the (7x7) phase move in the direction opposite to the electric current, while in the direction of the thermal gradient. We have obtained the effective charge and the Soret coefficient of Si atoms in presence of an electric current and a thermal gradient. At last, the nucleation, growth and dynamic coalescence of Au droplets on Au/Ge(111) surface is studied, and the electromigration of 2D Au/Ge(111)-( √3x√3) domains on Au/Ge(111)-(1x1) surface
Lin, Minghui. "A thermodynamic framework for damage mechanics of electromigration and thermomigration." 2006. http://proquest.umi.com/pqdweb?did=1184163691&sid=5&Fmt=2&clientId=39334&RQT=309&VName=PQD.
Повний текст джерелаTitle from PDF title page (viewed on Mar. 03, 2007) Available through UMI ProQuest Digital Dissertations. Thesis adviser: Basaran, Cemal. Includes bibliographical references.
Guo, Shyh-Ming, and 郭世明. "Thermomigration and Electromigration in Flip Chip Sn-Ag-Cu Solder Bumps." Thesis, 2005. http://ndltd.ncl.edu.tw/handle/54689599890953659188.
Повний текст джерела國立成功大學
材料科學及工程學系碩博士班
93
The present work investigated the behaviors of electromigration and thermomigration in the Sn-3.0Ag-0.5Cu Pb-free flip chip solder bumps at 120°C by applying a three-bump set therein the electrical current flows in different directions. The third bump mainly experienced heat transfer from the Al trace without current flowing for comparison. The solder bumps were examined at specified period of current stressing using SEM (Scanning Electron Microscope) and EDX (Energy Dispersive X-ray Spectroscopy). Voids formed on the Al trace/ solder interface regardless of the direction of electron flow. Voids also formed at the interface even though the current flowed along the Al trace. Thermomigration overwhelms electromigration and results in mass diffusion when counter flow of electron and thermal gradient exists. The thermal gradient throughout the bump drives the mass transfer of Sn and Al. Thermomigration results in the formation of voids on the Al trace/ solder interface and the accumulation of Sn on the substrate side. Due to the migration of Al through the IMC layer into the solder bump, the cracks are formed at the Al trace. The electrical current resulted in the consumption of Ni in some local areas. The formation of intermetallic compound at the substrate side (metallized with Cu/Ni-P/Au) was suppressed when the electron flow and thermal gradient were in the opposite direction. On the other hand, the solder mass was forced to migrate to the substrate when the current flowed toward the substrate or along the Al trace. In order to illustrate the importance of heat dissipation, a set of joints was stressed with current at an environmental temperature of –5oC. The comparison between the as produced bump and current stressed bump indicated that no visible defect exists either at the cathode or at the anode even after 600 hours. These observations further emphasized the significance of heat dissipation in reducing the migration defect.
Shen, Yu-An, and 沈育安. "Effect of Sn Microstructure on Electromigration and Thermomigration in Sn2.3Ag Microbumps." Thesis, 2017. http://ndltd.ncl.edu.tw/handle/42731029402804192866.
Повний текст джерела國立交通大學
材料科學與工程學系所
105
Microbump plays an important role to connect chips in three-dimensional integrated circuit (3D IC) technology. With the reduction of solder volume, the increase in current density and thermal gradient has raised serious reliability concern during electromigration and thermomigration. Tin microstructures are very important on testing the reliability of solder joints； Tin grain orientation affects electromigration and thermomigration in solder joints due to the high anisotropic diffusivity of Cu and Ni in Tin crystals; In addition, Sn grain boundaries could provide a fast path for the diffusion of Cu and Ni atoms. In this study, we investigate the microstructures of microbumps with Cu-Cu, Cu-Ni, and Ni-Ni UBM. The Sn grains between Cu-Cu- and Cu-Ni UBMs are larger than those between Ni-Ni UBM. However, the UBM materials have no significant effect on the orientation of Sn grains. Furthermore, we observe that Sn grain orientation plays a critical role in the growth of Cu-Sn intermetallic compounds (IMCs) during electromigration and thermomigration. For Sn grains with low α-angles, which is the angle between the c-axis of a Sn grain and electron direction or the direction of thermal gradient, Cu-Sn IMCs grew very fast during electromigration and thermomigration. On the other hand, the thickness of interfacial IMCs did not grow much in Sn grains with high α angles. This is because Cu diffusion was very slow in high-α-angle Sn grains. In addition, for Sn-Ag solder joints, most of the grain boundaries consist of cyclic twins, unideal paths for fast diffusion for Cu atoms. Therefore, the grain-boundary diffusion of Cu is less important than Sn orientation in the formation of Cu-Sn IMCs during electromigration.
Wei-ChiehWang and 王偉傑. "Electromigration and Thermomigration Behavior of IMCs in Sn2.4Ag Flip Chip Solder Joint." Thesis, 2012. http://ndltd.ncl.edu.tw/handle/07245457252679599191.
Повний текст джерела國立成功大學
材料科學及工程學系碩博士班
100
The present study investigated the effect of electromigration and thermomigration on the evolution of intermetallic compounds (IMCs) in the flip chip Cu/Sn2.4Ag/Cu solder joints. In this study, two joints in a set were used with different directions of electrical current flow. In contrast, another joint mainly experienced heat from the ambient temperature without current stressing. The in situ current stressing test was started under current density of 7.5×104 A/cm2 under room temperature. In addition, under the high-temperature current stressing test, the solder joints were stressed with various current densities of 1.5 and 3.0×104 A/cm2 at 100℃, 150℃ and 180℃ respectively. The kinetic behavior of the growth of IMCs was investigated by analyzing their size and their distribution of IMCs in the joints. In the in situ experiment, the thickness of Cu3Sn and Cu6Sn5 IMC at the interface between the Cu layer and the solder did not change significantly. However, the size of Cu6Sn5 IMC particles in the solder matrix became larger during current stressing. Under the current density of 1.5×104A/cm2 at 180℃ and under 3.0×104A/cm2 at 150℃, uneven consumption of the cathodic Cu pad was observed. The dissolved Cu atoms migrated as a result of the driving force induced by electromigration and thermomigration, and formed Cu6Sn5 IMC with Sn atoms. However, the Cu3Sn IMC and Ag3Sn IMC did not congregate at the anode side, and their size increased linearly with temperature. From the kinetics studies, it is revealed that the value of activation energy required for the growth of Ag3Sn IMC during current stressing decreases to the value of activation energy in liquid alloy, and the mechanism of this reaction changes from diffusion controlled under thermal aging to reaction controlled under current stressing.
Chae, Seung-Hyun 1977. "Electromigration and thermomigration reliability of lead-free solder joints for advanced packaging applications." Thesis, 2010. http://hdl.handle.net/2152/ETD-UT-2010-05-994.
Повний текст джерелаtext
Tsai, Chia-Ming, and 蔡家銘. "Study of Electromigration and Thermomigration in Flip-Chip Solder Joints under Electron Flow Stressing." Thesis, 2006. http://ndltd.ncl.edu.tw/handle/9d959a.
Повний текст джерела國立中央大學
化學工程與材料工程研究所
94
Abstract The flip chip technology has been the dominating packaging solution for high performance chips and will remain so in the foreseeable future due to its shorter electrical connection length between the chip and substrate. As the chip complexity increases, the I/O density on each chip also increases. To accommodate the continuing rise of the I/O density, the diameter of the flip chip solder joints must shrink. At present, the diameter of a solder joint is about 100 �慆, and it will be reduced to 50 �慆 soon. It means that the average current density in such a 50 �慆 joint is about 103 A/cm2 when a 0.02 A current is applied. Electromigration in flip-chip solder joints has become a serious reliability concern when the current density reaches the 103 A/cm2 level, which is about two orders of magnitude smaller than that in Al and Cu interconnects. The reason for this lower threshold current density to cause electromigration in solders has been pointed out to be the combination of several factors in the “critical product” of electromigration, including the higher resistivity, the smaller Young’s modulus, and the larger effective charge of solders. This lower threshold makes electromigration in solders now one of the major reliability threats to microelectronic devices. This investigation studies how electron flow distribution and vacancy concentration gradient affect the diffusion of solder atoms in a flip-chip solder joint under current stress. The migration of materials was traced by monitoring the positions of 21 Pb grains of the eutectic PbSn solder joint. Experimental results indicate that the displacements of the Pb grains were not uniform along in the electron flow direction. Additionally, certain Pb grains exhibited lateral displacements. The non-uniform material migration is attributable to the combined effect of electromigration and the vacancy concentration gradient, which was caused by electromigration. The combined effects of electromigration and thermomigration on material migration were also examined in this study. When the direction of electron flow is the same with temperature gradient, more solder atoms migrate. When the direction of electron flow is opposite with temperature gradient, less solder atoms migrate. Considering the effect of thermomigration in solder bump, the displacements of the Pb grains were measured, and the DZ* value of Sn in eutectic SnPb solder estimated to be -3.4×10-10 cm2/s. The calculated Z* value is about -34. This study also reported that the solder joints failed by local melting of PbSn eutectic solder bump. The local melting occurred due to a sequence of events induced by the microstructure changes of the flip chip solder joint. The formation of a depression in current crowding region of solder joint induced a local electrical resistance increased. The rising local resistance resulted in a larger Joule heating, which, in turn, raised the local temperature. When the local temperature rose above the eutectic temperature of the PbSn solder, the solder joint melted and consequently failed. This result also shows that several points need to be considered when we face the issues of electromigration on reliability of flip chip solder joints. Firstly, the geometry of flip solder joints should be designed to avoid the formation of current crowding region in solder bump. Secondly, in order to resist the microstructure change, the higher mechanical intensity solder need be chose. Thirdly, increasing heat dissipation of solder joint under current stressing or choosing the solder which has higher melting point in order to prevent the melting phenomenon occurred.
Lin, Ger-Pin, and 林哲平. "Electromigration and Thermomigration in Ball Grid ArraySn-Zn-Ag-Al-Ga Lead-Free Solders." Thesis, 2006. http://ndltd.ncl.edu.tw/handle/46125153766103878900.
Повний текст джерела國立成功大學
材料科學及工程學系碩博士班
94
Eutectic Sn-Pb solder are mainly used to connect the electronic devices and printed circuit board. But, many countries have concerned about lead, which would pollute environment and hurt human health. The development of lead-free solders has become the most important issue, oxidation resistance, wettability, and other properties. This study investigated Sn8.5Zn0.5Ag0.01Al0.1Ga solder balls, which was developed by our lab. This study investigated the micro-structure of solder balls under electromigration and thermomigration effects. After assembly, we would apply different of current density to solder balls at 120℃. Electrons would impact the intermetallic compounds (AuZn3 and AgZn3) seriously in current crowding section. The intermetallic compounds would decompose. The atoms coming from intermetallic compound decomposition would move in the direction of temperature gradient and react to form intermetallic compounds. Without other atom to occupy the site in which intermetallic compounds decomposed, it would be observed voids. If the directions of thermomigration and electromigration were the same, Sn atom would be affected seriously by temperature gradient and electric impaction, and move in the direction. In this lead-free solder, the AgZn3-AuZn3-AgZn3 three layers compound would transfer and consume the Zn-rich phase in solder balls.
Частини книг з теми "Electromigration-thermomigration"
Basaran, Cemal. "Unified Mechanics of Metals under High Electrical Current Density: Electromigration and Thermomigration." In Introduction to Unified Mechanics Theory with Applications, 395–425. Cham: Springer International Publishing, 2021. http://dx.doi.org/10.1007/978-3-030-57772-8_8.
Повний текст джерелаBasaran, Cemal. "Unified Mechanics of Metals Under High Electrical Current Density: Electromigration and Thermomigration." In Introduction to Unified Mechanics Theory with Applications, 427–58. Cham: Springer International Publishing, 2022. http://dx.doi.org/10.1007/978-3-031-18621-9_8.
Повний текст джерелаLloyd, James, King-Ning Tu, and Jasvir Jaspal. "The Physics and Materials Science of Electromigration and Thermomigration in Solders." In Handbook of Lead-Free Solder Technology for Microelectronic Assemblies. CRC Press, 2004. http://dx.doi.org/10.1201/9780203021484.ch20.
Повний текст джерела"The Physics and Materials Science of Electromigration and Thermomigration in Solders." In Handbook of Lead-Free Solder Technology for Microelectronic Assemblies, 844–67. CRC Press, 2004. http://dx.doi.org/10.1201/9780203021484-25.
Повний текст джерелаТези доповідей конференцій з теми "Electromigration-thermomigration"
Xin Gu, Kunpeng Ding, Jian Cai, and Lingwen Kong. "Electromigration and thermomigration in Sn3Ag0.5Cu solder joints." In High Density Packaging (ICEPT-HDP). IEEE, 2010. http://dx.doi.org/10.1109/icept.2010.5582786.
Повний текст джерелаTu, K. N., Annie Huang, and Fan-Yi Ouyang. "Electromigration and thermomigration in flip chip solder joints." In 2006 8th International Conference on Electronic Materials and Packaging - EMAP '06. IEEE, 2006. http://dx.doi.org/10.1109/emap.2006.4430563.
Повний текст джерелаCui, Zhen, Xuejun Fan, and Guoqi Zhang. "Effect of Thermomigration on Electromigration in SWEAT Structures." In 2023 24th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE). IEEE, 2023. http://dx.doi.org/10.1109/eurosime56861.2023.10100774.
Повний текст джерелаAbdul Hamid, Mohd Foad, and Cemal Basaran. "Low temperature electromigration and thermomigration in lead-free solder joints." In 2008 33rd IEEE/CPMT International Electronics Manufacturing Technology Conference (IEMT). IEEE, 2008. http://dx.doi.org/10.1109/iemt.2008.5507782.
Повний текст джерелаYang, Dan, and Y. C. Chan. "The characteristics of electromigration and thermomigration in flip chip solder joints." In 2007 13th International Workshop on Thermal Investigation of ICs and Systems (THERMINIC). IEEE, 2007. http://dx.doi.org/10.1109/therminic.2007.4451744.
Повний текст джерелаOuyang, Fan-Yi, Wei-Cheng Jhu, Hao Hsu, and Tsung-Han Yang. "Electromigration and thermomigration of Pb-free microbumps in three-dimensional integrated circuits packaging." In 2014 International Conference on Electronics Packaging (ICEP). IEEE, 2014. http://dx.doi.org/10.1109/icep.2014.6826668.
Повний текст джерелаBt Syed Noh, Sharifah Nur'ai Shikin, Mohd Foad Abdul Hamid, and Mohd Nasir Tamin. "Mass Migration Damaged Based Model and the Behaviour of Electromigration and Thermomigration in Interconnect." In 2018 IEEE 38th International Electronics Manufacturing Technology Conference (IEMT). IEEE, 2018. http://dx.doi.org/10.1109/iemt.2018.8511802.
Повний текст джерелаLi, Menglu, K. N. Tu, Dong-Wook Kim, and Sam Gu. "Electromigration induced thermomigration in microbumps by thermal cross-talk across neighboring chips in 2.5D IC." In 2016 IEEE International Reliability Physics Symposium (IRPS). IEEE, 2016. http://dx.doi.org/10.1109/irps.2016.7574627.
Повний текст джерелаChen, Bicheng, and Cemal Basaran. "Full Field Joule Heating Measurement of Copper Plate Using Phase Shifting Moire´ Interferometry in Microscopic Scale." In ASME 2009 InterPACK Conference collocated with the ASME 2009 Summer Heat Transfer Conference and the ASME 2009 3rd International Conference on Energy Sustainability. ASMEDC, 2009. http://dx.doi.org/10.1115/interpack2009-89014.
Повний текст джерелаLiang, Shui-Bao, Chang-Bo Ke, Cheng Wei, Min-Bo Zhou, and Xin-Ping Zhang. "Phase field study of the combined effects of electromigration and thermomigration on phase segregation and physical properties of Sn58Bi solder joints under electric current stressing coupled with temperature gradient." In 2018 19th International Conference on Electronic Packaging Technology (ICEPT). IEEE, 2018. http://dx.doi.org/10.1109/icept.2018.8480529.
Повний текст джерела