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Добірка наукової літератури з теми "Electrodeposited film"

Автор: Grafiati
Опубліковано: 11 січня 2025

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Статті в журналах з теми "Electrodeposited film"

1

Son, Min-Kyu. "Effect of Deposition Parameters on Morphological and Compositional Characteristics of Electrodeposited CuFeO2 Film." Coatings 12, no. 12 (November 25, 2022): 1820. http://dx.doi.org/10.3390/coatings12121820.

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Анотація:
Deposition parameters determine the characteristics of semiconductor films in electrodeposition. Thus, it is essential to understand the effect of deposition parameters on the electrodeposited film for fabricating suitable semiconductor film fitting for various applications. In this work, the morphological and compositional properties of electrodeposited delafossite CuFeO2 film, according to the deposition parameters, were studied. The CuFeO2 film was fabricated by the galvanostatic electrodeposition and post-annealing process under inert gas flow. The type of solvent, electrolyte condition, applied current density and deposition time were controlled as the variable deposition parameters. As a result, the typical CuFeO2 film, without any impurities, was electrodeposited in the electrolyte-based DMSO solvent. Interestingly, the concentration of potassium perchlorate as a complexing agent caused morphological change in electrodeposited CuFeO2 film, as well as compositional transition. On the other hand, the applied current density and deposition time only influenced the morphology of electrodeposited CuFeO2 film. These observations would provide specific guidelines for the fabrication of electrodeposited CuFeO2 film with suitable composition and morphology for various applications.
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2

Noorbakhsh Nezhad, Amir Hossein, Ehsan Rahimi, Reza Arefinia, Ali Davoodi, and Saman Hosseinpour. "Effect of Substrate Grain Size on Structural and Corrosion Properties of Electrodeposited Nickel Layer Protected with Self-Assembled Film of Stearic Acid." Materials 13, no. 9 (April 28, 2020): 2052. http://dx.doi.org/10.3390/ma13092052.

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Анотація:
In the present study, the impact of copper substrate grain size on the structure of the succeeding electrodeposited nickel film and its consequent corrosion resistance in 3.5% NaCl medium were evaluated before and after functionalization with stearic acid. Nickel layers were electrodeposited on two different copper sheets with average grain size of 12 and 25 µm, followed by deposition of stearic acid film through self-assembly. X-ray diffraction analysis of the electrodeposited nickel films revealed that the deposition of nickel film on the Cu substrate with small (12 µm) and large (25 µm) grains is predominantly governed by growth in the (220) and (111) planes, respectively. Both electrodeposited films initially exhibited a hydrophilic nature, with water-contact angles of 56° and <10°, respectively. After functionalization with stearic acid, superhydrophobic films with contact angles of ~150° were obtained on both samples. In a 3.5% NaCl medium, the corrosion resistance of the nickel layer electrodeposited on the copper substrate with 25 µm grains was three times greater than that deposited on the copper substrate with 12 µm grains. After functionalization, the corrosion resistance of both films was greatly improved in both short and long immersion times in 3.5% NaCl medium.
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3

Cetina-Dorantes, Marco, Francisco Lizama-Tzec, Dallely Herrera-Zamora, Octavio García-Valladares, Victor Gómez-Espinoza, Geonel Rodriguez Gattorno, and Gerko Oskam. "(Digital Presentation) Electrodeposition and Characterization of a Selective Coating on Aluminum for Scale-up in Thermo-Solar Applications." ECS Meeting Abstracts MA2022-02, no. 22 (October 9, 2022): 936. http://dx.doi.org/10.1149/ma2022-0222936mtgabs.

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Анотація:
Flat-plate solar collector systems are devices used to convert solar energy to thermal energy. These devices require a selective coating that absorbs all sunlight but does not emit energy in the near IR; hence, a multilayer system of metal/IR-reflector/metal oxide is often used. Many substrates are used, including metals such as copper, stainless steel, and aluminum. Aluminum is an interesting substrate for its lower cost and good optical properties. Electrodeposited materials have gained importance in the industry for the easy handling and good results in scale-up. However, in general it is difficult to electrodeposit onto aluminum due to the ever-present thin insulating oxide film. In this work, we propose an adherent interlayer film based on copper, which is electrodeposited onto aluminum, and serves as a basis for the subsequent electrodeposition of a selective coating consisting of bright nickel and the absorber film of electrodeposited black nickel. Solar collectors based on aluminum substrates and this electrodeposited selective coating are specifically useful for thermo-solar applications at low to medium temperature. Electrochemistry studies including cyclic voltammetry, rotating disk cyclic voltammetry, and galvanostatic curves are carried out for all the different layers. The properties of the coatings are subsequently characterized by reflectance spectra using UV-Vis, NIR and IR spectrophotometers equipped with integrating spheres. The solar absorptance is calculated by weighting the reflectance spectrum against the solar radiation spectrum ASTM G173-03. The thermal emittance is calculated weighting the reflectance spectra against the black body radiation function at 100 °C. The morphology and homogeneity of the film are evaluated with scanning electron microscopy, and energy dispersive spectroscopy. X-ray photoelectron spectrometry is used to determine the film composition. The crystalline structure of the films is studied by X-ray diffraction and Raman measurements. The second and third layer, bright nickel, and black nickel, respectively, are electrodeposited on top of the Cu layer using a previously reported method. We characterize the selective coating electrodeposited onto aluminum/Cu/bright nickel and show that this is a viable technology for the fabrication of low-cost and high efficiency flat plate solar collectors. In addition, we demonstrate the scale-up of the electrodeposition process, and characterize the performance of a complete flat-plate solar collector device of 1.8 m2 gross area. Acknowledgements The authors gratefully acknowledge CONACYT, Módulo Solar S.A. de C.V. and IER-UNAM for funding through the Mexican Center for Innovation in Solar Energy (CeMIE-Sol), Project P-81.
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4

Qiu, C. X., and I. Shih. "Photovoltaic devices fabricated on electrodeposited CuInSe2 films." Canadian Journal of Physics 67, no. 4 (April 1, 1989): 444–47. http://dx.doi.org/10.1139/p89-079.

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Анотація:
Using both Al–CuInSe2 Schottky junctions and CdS–CuInSe2 heterojunctions fabricated on electrodeposited p-type CuInSe2 films, we have investigated some properties of CuInSe2. From current–voltage and capacitance–voltage measurements carried out on these devices, it was found that the electronic quality of the CuInSe2 film surface was improved after the deposition of the CdS layer. In addition, it was observed that the electronic properties of the heterojunctions were dependent on the In/Cu ratio in the electrodeposited CuInSe2 films. Using a film with In/Cu = 1.1, we successfully fabricated a cell with an active-area conversion efficiency of 5.2%. Post-fabrication air heat treatment at 180 °C on the CdS–CuInSe2 devices was found to result in an increase in the charge-carrier concentration in the electrodeposited CuInSe2 films.
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5

Xiong, Wei, Fei Hu, Hua Bing Fang, and Yue Hui Hu. "The Linear Sweep Voltammetric Study and Two-Step Electrodeposition of CuIn 0.95 Se2.1Thin Film in a Citric Acid Electrolyte." Advanced Materials Research 472-475 (February 2012): 2744–47. http://dx.doi.org/10.4028/www.scientific.net/amr.472-475.2744.

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Анотація:
Electrodeposition of CuInSe2 (CIS) thin films has been investigated by linear sweep voltammetry on F-doped tin oxide (FTO) glass in electrolytes containing citric acid. It is found that one-step electrodeposited CIS thin films have great deviation from the ideal stoichiometric ratio. After deposited a film at -900 mV (vs.SCE) for 20s on the FTO, the linear sweep voltammetry has showed that only one reduction current peak at -550 mV is remained, and the two-step electrodeposited CIS film showed a near- toichiometric ratio of 1:0.9:2.1.
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6

Kobayashi, Tatsuya, and Ikuo Shohji. "Fabrication of Three-Dimensional Microstructure Film by Ni-Cu Alloy Electrodeposition for Joining Dissimilar Materials." Materials Science Forum 1016 (January 2021): 738–43. http://dx.doi.org/10.4028/www.scientific.net/msf.1016.738.

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Анотація:
Metals with a three-dimensional microstructure film can be joined to plastics by the anchor effect. The three-dimensional microstructure films can be electrodeposited by a Ni-Cu alloy. In this study, the effects of the ratio of the concentration of Ni amidosulfate and Cu sulfate in the plating solution and plating current density on the shapes and microstructures of electrodeposited films were investigated. When the ratio of the concentration of the Ni amidosulfate and the Cu sulfate is 0.47-1.4:0.06 (M/L), a dendritic-type electrodeposited structure was generated at plating current density of 10 mA/cm2. When the ratio of the concentration of the Ni amidosulfate and the Cu sulfate is 0.47:0.6-1.2 (M/L), a feathery-type and needle-type electrodeposited structure was generated.
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7

Wang, Zi Feng, Yong Zhao Liu, Yu Shan Liu, and Jian Min Zhang. "Fabrication of the ZnS-ZnO Composite Film by Sulfurizing the as-Electrodeposited ZnO Film." Advanced Materials Research 881-883 (January 2014): 909–13. http://dx.doi.org/10.4028/www.scientific.net/amr.881-883.909.

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Анотація:
The ZnS-ZnO composite film was successfully prepared by sulfidation of the as-electrodeposited ZnO film in the aqueous solution of zinc nitrate and hexamethylenetetramine. The ZnO film was electrodeposited on the substrate of indium-tin oxide (ITO) glass, and then the sodium sulfide solution was used to convert the ZnO film into the ZnS-ZnO composite film. The products were characterized by X-ray diffraction (XRD), field emission scanning electron microscopy (FE-SEM), energy-dispersive X-ray spectrometer (EDS) and UVvisible absorption. The experimental results show that the composite film on ITO glass still retained the morphology of as-electrodeposited ZnO coating, and is composed of ZnS with cubic structure and ZnO with hexagonal structure.
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8

Kim, Young-Soo, Jin-Kyu Lee, Jae-Hoon Ahn, Eun-Kyung Park, Gil-Pyo Kim, and Sung-Hyeon Baeck. "Fabrication of Mesoporous Cerium Dioxide Films by Cathodic Electrodeposition." Journal of Nanoscience and Nanotechnology 7, no. 11 (November 1, 2007): 4198–201. http://dx.doi.org/10.1166/jnn.2007.109.

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Анотація:
Mesoporous cerium dioxide (Ceria, CeO2) thin films have been successfully electrodeposited onto ITO-coated glass substrates from an aqueous solution of cerium nitrate using CTAB (Cetyltrimethylammonium Bromide) as a templatingagent. The synthesized films underwent detailed characterizations. The crystallinity of synthesized CeO2 film was confirmed by XRD analysis and HR-TEM analysis, and surface morphology was investigated by SEM analysis. The presence of mesoporosity in fabricated films was confirmed by TEM and small angle X-ray analysis. As-synthesized film was observed from XRD analysis and HR-TEM image to have well-crystallized structure of cubic phase CeO2. Transmission electron microscopy and small angle X-ray analysis revealed the presence of uniform mesoporosity with a well-ordered lamellar phase in the CeO2 films electrodeposited with CTAB templating.
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9

Chowdhury, RI, MS Islam, F. Sabeth, G. Mustafa, SFU Farhad, DK Saha, FA Chowdhury, S. Hussain, and ABMO Islam. "Characterization of Electrodeposited Cadmium Selenide Thin Films." Dhaka University Journal of Science 60, no. 1 (April 15, 2012): 137–40. http://dx.doi.org/10.3329/dujs.v60i1.10352.

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Анотація:
Cadmium selenide (CdSe) thin films have been deposited on glass/conducting glass substrates using low-cost electrodeposition method. X-ray diffraction (XRD) technique has been used to identify the phases present in the deposited films and observed that the deposited films are mainly consisting of CdSe phases. The photoelectrochemical (PEC) cell measurements indicate that the CdSe films are n-type in electrical conduction, and optical absorption measurements show that the bandgap for as-deposited film is estimated to be 2.1 eV. Upon heat treatment at 723 K for 30 min in air the band gap of CdSe film is decreased to 1.8 eV. The surface morphology of the deposited films has been characterized using scanning electron microscopy (SEM) and observed that very homogeneous and uniform CdSe film is grown onto FTO/glass substrate. The aim of this work is to use n-type CdSe window materials in CdTe based solar cell structures. The results will be presented in this paper in the light of observed data.DOI: http://dx.doi.org/10.3329/dujs.v60i1.10352 Dhaka Univ. J. Sci. 60(1): 137-140 2012 (January)
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10

KUDO, TERUHISA, MUTSUMI KIMURA, KENJI HANABUSA, and HIROFUSA SHIRAI. "Fabrication of p-n Junction Diodes from Phthalocyanine and Electropolymerized Perylene Derivatives." Journal of Porphyrins and Phthalocyanines 02, no. 03 (May 1998): 231–35. http://dx.doi.org/10.1002/(sici)1099-1409(199805/06)2:3<231::aid-jpp82>3.0.co;2-s.

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Анотація:
Perylene derivative films doped with metal ion were deposited on indium tin oxide ( ITO )-coated glass electrodes by electrodeposition from solutions of N, N″-4-hydroxyphenyl-3,4,9,10-perylenetetracarboxylic-diimide (hph-PTC) and CaCl 2, PbCl 2, ZnCl 2 or CoBr 2 as a supporting electrolyte in N, N-dimethylformamide ( DMF ). The p-n junction diodes consisting of a p-type phthalocyanine (Pc) sublimed film and an n-type hph-PTC electrodeposited film doped with metal ion exhibited Zener-type breakdown and photocurrent enhancement. The device with a p-n junction consisting of a Pc sublimed film and an hph-PTC electrodeposited film doped with Ca 2+ showed the largest amplification of photocurrent. This result suggests that the dopant ion in hph-PTC is an important factor in the preparation of p-n junction diodes.
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Більше джерел

Дисертації з теми "Electrodeposited film"

1

Echendu, Obi Kingsley. "Thin film solar cells using all-electrodeposited ZnS, CdS and CdTe materials." Thesis, Sheffield Hallam University, 2014. http://shura.shu.ac.uk/19597/.

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Анотація:
The urgent global need for affordable alternative and clean energy supply has triggered extensive research on the development of thin-film solar cells since the past few decades. This has necessitated the search for low-cost, scalable and manufacturable thin-film semiconductor deposition techniques which in turn has led to the research on electrodeposition technique as a possible candidate for the deposition of semiconductor materials and the fabrication of thin-film solar cells using these materials. Electronic quality ZnS, CdS, and CdTe thin layers have been successfully electrodeposited from aqueous solutions on glass/fluorine-doped tin oxide (FTO) substrates, using simplified two-electrode system instead of the conventional three-electrode system. This process was also carried out in a normal physical chemistry laboratory instead of the conventional cleanroom that is very expensive to maintain. The electrodeposited materials were characterised for their structural, optical, electrical, morphological and compositional properties using x-ray diffraction, optical absorption, photoelectrochemical cell, current-voltage, scanning electron microscopy and energy dispersive x-ray techniques respectively. The results show that amorphous n-type and p-type ZnS layers were deposited by varying the concentrations of Zn[2+] and S[2-] in the deposition electrolyte. The CdS layers show hexagonal structure with n-type electrical conduction while CdTe layers show cubic structure with n-type electrical conduction, in the cathodic deposition potential range explored. Using CdTe as the main absorber material, fully fabricated solar cell structures of the n-n hetero-junction + large Schottky barrier type were fabricated instead of the conventional p-n junction type structure. Conventional post-deposition CdCl[2] treatment of CdTe rather carried out with a mixture of CdCl[2] and CdF[2], resulted in pronounced improvement of all the device parameters. Characterisation of the fully fabricated solar cells was done using current-voltage and capacitance-voltage techniques. Promising device parameters were obtained for the best devices, with barrier heights greater than (1.00 - 1.13) eV, short-circuit current densities of (20 - 48) mAcm[-2], open-circuit voltages of (500 - 670) mV, fill factors of (0.33 - 0.47) and overall conversion efficiencies of (5.0 - 12.0)%. Remarkably, the two highest efficiency figures of 10.4% and 12.0% came up for solar cells involving ZnS as buffer layer and window layer with the structures, glass/FTO/n-ZnS/n-CdS/n-CdTe/Au and glass/FTO/n-ZnS/n-CdTe/Au, respectively. At present, the reproducibility and consistency of these devices is poor, but these results demonstrate that these devices structures have the potential to achieve efficiency values over 20% when fully optimised.
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2

Kayishaer, Aihemaiti. "Détection de l’ammoniac par des capteurs résistifs à base de films de polyaniline électrodéposés." Electronic Thesis or Diss., Bourgogne Franche-Comté, 2024. http://www.theses.fr/2024UBFCD037.

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Анотація:
La thèse vise à développer des capteurs résistifs à base de polyaniline électrosynthétisée pour détecter l’ammoniac à faible concentration (ppb). La polyaniline est un polymère conducteur choisi pour sa conductivité électrique élevée, sa flexibilité et sa stabilité thermique. L’influence de la nature de l’acide, la présence de surfactant et l’utilisation d’aniline fluorée lors de l’électropolymérisation a été étudiée. Ainsi, la synthèse et l’optimisation du film polymère ont été réalisées par électrochimie accompagnées d’une étude complète de sa morphologie, de sa rugosité et de ses propriétés physico-chimiques. Puis, l’impact de la formulation sur la réponse à l’ammoniac a été caractérisé. L’étude des performances métrologiques (réversibilité, répétabilité, sensibilité, reproductibilité, limite de détection, influence de l’humidité et sélectivité) a été menée dans des conditions contrôlées de température et d’humidité relative. La réponse des capteurs s’est avérée être influencée par la nature des contre-ions présents dans le film polymère. Ainsi les films de polyaniline/acide camphorsulfonique permettent d’obtenir des films très reproductibles, réversibles, stables à l’humidité et sensibles avec une limite de détection de 4 ppb. L’ajout de surfactant permet d’offrir une meilleure sensibilité. L’ajout d’aniline fluorée permet également d’améliorer les performances des capteurs notamment en limitant l’influence de l’humidité
The thesis aims to develop electrosynthesized polyaniline-based resistive sensors to detect ammonia at low concentrations (ppb). Polyaniline is a conductive polymer chosen for its high electrical conductivity, flexibility and thermal stability. The influence of the nature of the acid, the presence of surfactant and the use of fluorinated aniline during electropolymerization was studied. Thus, the synthesis and optimization of the polymer film were carried out by electrochemistry accompanied by a complete study of its morphology, roughness and physicochemical properties. Then, the impact of the formulation on the response to ammonia was characterized. The study of metrological performances (reversibility, repeatability, sensitivity, reproducibility, detection limit, influence of humidity and selectivity) was carried out under controlled conditions of temperature and relative humidity. The response of the sensors was found to be influenced by the nature of the counterions present in the polymer film. Thus, polyaniline/camphorsulfonic acid films make it possible to obtain very reproducible, reversible, humidity-stable and sensitive films with a detection limit of 4 ppb. The addition of surfactant provides better sensitivity. The addition of fluorinated aniline also improves the performance of the sensors, in particular by limiting the influence of humidity
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3

Campbell-Rance, Debbie. "Electrodeposited Silica Thin Films." VCU Scholars Compass, 2010. http://scholarscompass.vcu.edu/etd/2123.

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Анотація:
Sol-gel derived silica thin film synthesis has gained prominence because of the mild processing conditions and widespread understanding of the chemistry of the process. Traditionally, silicate films are prepared by spin- and dip-coating but these materials lack the desired porosity for sensing, separations and catalysis applications. Electrochemical deposition was proposed to improve the porosity of silicate films. The main aims of this work were threefold. First we wanted to elucidate what parameters influenced film formation during electrodeposition. Then we wanted to understand how these parameters affected the morphology of the materials prepared. These films were characterized by profilometry, AFM, and SEM-EDX. Films electrodeposited via cathodic potentials are particle-like, thicker and rougher than spin-coated films. The final goal was to pattern a substrate with silica using photolithography, sol-gel process and electrodeposition. Successful patterning was hindered by the deposition of silica on glass, especially when the gap between ITO bands was smaller than the diffusion layer thickness of the electroactive species.
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4

Varea, Espelt Aïda. "Multifunctional Electrodeposited Nanocrystalline Cu-Ni Films." Doctoral thesis, Universitat Autònoma de Barcelona, 2013. http://hdl.handle.net/10803/117274.

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Анотація:
Aquesta Tesi engloba la fabricació mitjançant electrodeposició de capes nanocristal·lines de Cu-Ni en tot el rang de composicions, així com la seva caracterització morfològica (microscòpia electrònica de rastreig i de forces atòmiques), microestructural (difracció de raigs X i microscòpia electrònica de transmissió), mecànica (nanoindentació), magnètica (emprant els magnetòmetres d’efecte Kerr magneto-òptic i superconducting quantum interference device – SQUID-), de resistència a la corrosió (mètode de polarització potenciodinàmica), així com la seva estabilitat tèrmica. El procés d’electrodeposició s’ha realitzat en corrent continu en una cel·la convencional de tres elèctrodes. Els banys utilitzats contenen el mateix tipus de sals metàl·liques (sulfats de Cu i Ni) i additius (citrat, dodecilsulfat de sodi i sacarina), però s’ha variat la relació de concentracions [Cu(II)]/[Ni(II)] per tal d’obtenir capes en tot el rang de composicions (Cu1-xNix). Convé destacar l’important paper que fa la sacarina com a agent refinador de gra, ja que la seva presència en el bany permet obtenir capes llises i nanocristal·lines (mida de cristall ~30 nm) amb propietats mecàniques notablement superiors a capes de composició anàloga amb mides de cristall més grans (~400 nm). Per a tots els banys, un augment en el valor absolut de la densitat de corrent comporta un augment del sobrepotencial i, de retruc, un increment del contingut de Ni en els dipòsits. D’aquesta manera, dins de la sèrie de capes nanocristal·lines fabricades, s’observa que la duresa, la resistència al desgast i a la deformació plàstica i la recuperació elàstica milloren en augmentar el contingut en Ni de l’aliatge. S’han assolit valors de duresa de H = 8.2 GPa en capes amb composició Cu0.13Ni0.87, que són força elevats si es comparen amb els valors de duresa que poden trobar-se a la literatura per a capes de naturalesa similar. Tot i així la presència de Cu també pot ésser beneficiosa per a certes aplicacions on s’hagi de sotmetre el material a temperatures elevades, ja que la seva presència contribueix a augmentar l’estabilitat tèrmica de l’aliatge bo i desplaçant l’inici del creixement de gra i, de retruc, el deteriorament de les propietats mecàniques, cap a temperatures de recuit superiors (p.e. T = 575 K per a Cu0.44Ni0.56) en comparació amb aquelles capes amb continguts més baixos de Cu (p.e. T = 525 K per a Cu0.12Ni0.88 i T = 425 K per a Ni pur). Pel que fa a les propietats magnètiques s’ha observat comportament ferromagnètic modulable en capes amb un contingut de Ni superior al 70 at% i s’han estudiat els canvis en els cicles d’histèresi magnètica amb la temperatura de recuit. Quant a la resistència a la corrosió en medi clorur, aquesta augmenta en incrementar el contingut de Ni dels dipòsits. També s’observa que el procés de nanoestructuració no deteriora de forma significativa la resistència a la corrosió del material. Així doncs queda demostrat que, gràcies a l’elevat grau de modulació que s’aconsegueix en les propietats mecàniques i magnètiques, el Cu-Ni és un bon candidat per a la seva implementació en sistemes electromecànics tant a escala micromètrica com nanomètrica. I per aquest mateix motiu, el treball de Tesi finalitza amb la presentació dels resultats derivats de la miniaturització d’aquest aliatge utilitzant el mateix concepte sintètic, de manera que es demostra la fabricació de matrius ordenades de nanocolumnes de diàmetres compresos entre 100 nm i 200 nm així com la seva composició i caracterització magnètica.
This Thesis dissertation encompasses the fabrication of nanocrystalline Cu-Ni films in all range of compositions by means of electrodeposition and their morphological (using scanning electron and atomic force microscopies), microstructural (by X-ray diffraction and transmission electron microscopy), mechanical (by nanoindentation) and magnetic (using magneto-optical Kerr effect and superconductor quantum interferometer device –SQUID- magnetometers) characterization, as well as their corrosion resistance (by potentiodynamic polarization method) and thermal stability. The electrodeposition process has been carried out by direct current in a conventional three-electrode cell configuration. The baths used throughout the work contain the same metallic salts (Cu and Ni sulphates) and additives (citrate, sodium dodecylsulphate and saccharine), but the [Cu(II)]/Ni(II)] concentration ratio in solution has been changed to obtain Cu-Ni films in all range of compositions (Cu1-xNix). Saccharine exerts a key role as a grain-refining agent since its addition to the bath leads to smooth, nanocrystalline films (crystallite size ~30 nm) with markedly improved mechanical performance compared to films with similar composition but larger crystallite sizes (~400 nm). For all the baths, an increase of the absolute value of the current density causes an increase in the overpotential which, in turns, yields to the deposits with larger Ni contents. Within the fabricated nanocrystalline films series, larger hardness, improved wear resistance and resistance to plastic deformation and larger elastic recovery are observed as the Ni content in the alloy increases. Hardness values around 8.2 GPa have been achieved for Cu0.13Ni0.87 films, which are larger than those found in the literature for films of similar nature. Even so, the presence of Cu can be beneficial for certain applications where the material has to operate at high temperatures. Namely, the presence of Cu increases the thermal stability by delaying grain growth toward higher annealing temperatures (T = 575 K for Cu0.44Ni0.56) as compared to films with lower Cu contents (T = 525 K for Cu0.12Ni0.88 and T = 425 K for pure Ni). Accordingly, a delay in the deterioration of the mechanical properties is seen. Regarding magnetic behaviour, tuneable ferromagnetic behaviour for Ni contents beyond 70 at% has been found and the changes in the magnetic hysteresis loops with the annealing temperature have been explored. Concerning the corrosion resistance in chloride environments, it improves as the Ni content increases in the deposits. It is also shown that the nanostructuring process does not significantly worsen the corrosion resistance of the material. It is thus demonstrated that, owing to their tuneable mechanical and magnetic properties, Cu-Ni alloys are good candidates for their implementation in electromechanical systems both at micro- and nanoscales. For this reason, this Thesis dissertation ends up with the presentation of the results about the miniaturization of this alloy using the same synthetic concept. In this sense, the fabrication of arrays of ordered nanopillars of 100 and 200 nm in diameter is demonstrated and their composition and magnetic properties are disclosed.
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5

Lafouresse, Manon. "Kinetic roughening and composition of electrodeposited films." Thesis, University of Bristol, 2007. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.443266.

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6

Qiu, C. X. (Xing Xing). "Investigation of electrodeposited CuInSe2 films for photovoltaic cells." Thesis, McGill University, 1991. http://digitool.Library.McGill.CA:80/R/?func=dbin-jump-full&object_id=39267.

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Анотація:
Uniform polycrysalline p-type CuInSe$ sb2$ films, thicknesses ranging from 1 to 4 $ mu$m, were deposited by a stable electrodeposition process developed in our laboratory. A (112) preferred orientation was found for the films. Vacuum annealing experiment results showed an improvement in the crystalline quality of the films after the annealing. The metal ratio of the films was not altered significantly by the annealing process. Al/CuInSe$ sb2$ Schottky junctions fabricated on p-type CuInSe$ sb2$ films showed that the current transport mechanism in the intermediate voltage region was governed by a recombination component. A dispersion effect of the capacitance-voltage curves with frequency, observed on the Schottky junctions suggested the presence of either enhanced interface states or deep levels in the depletion region. Solar cells of CdS/CuInSe$ sb2$ were fabricated by vacuum evaporating low resistivity n-type CdS layers on the electrodeposited p-type CuInSe$ sb2$ films. The highest AM1 active area conversion efficiency, for the 0.9 cm$ sp2$ cells, was 5.2% after an air heat treatment at 200$ sp circ$C. The efficiency value was increased to 5.6% in small area devices fabricated using a similar procedure. The air heat treatment was found to reduce the apparent carrier concentration in the CuInSe$ sb2$ films. Current-voltage (I-V) characteristics of the cells showed a definite relationship between the short circuit current and the indium to copper ratio in the CuInSe$ sb2$ films. Temperature dependent I-V curves revealed a dominant recombination current component for the heterojunction cells. The value of barrier height for a cell was estimated to be 0.64 eV. It was found that the differential capacitance values depended on measurement frequencies, resulting in frequency-dependent voltage intercepts. The C$ sp{-2}$-V curves were also observed to shift to more negative voltages under illumination. Interface states were believed to be responsible for all these effec
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7

Qiu, Chunong. "Development of photovoltaic cells on electrodeposited CuInSe2 films." Thesis, McGill University, 1995. http://digitool.Library.McGill.CA:80/R/?func=dbin-jump-full&object_id=39982.

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Анотація:
Using polycrystalline thin films of CuInSe$ sb2$ (thickness 1.5 $ mu$m) prepared by an electrodeposition method, photovoltaic cells of the form ZnO/CdS/CuInSe$ sb2$ have been fabricated and studied. Before the cell fabrication, properties of the electrodeposited CuInSe$ sb2$ were first studied. Conditions for the preparation of high resistivity CdS thin films (thickness 360 A) by a chemical bath deposition method were then established. This was achieved by varying the deposition temperature and amount of NH$ sb4$OH in the solution. It was observed that the quality of CdS films deposited at a temperature of 60$ sp circ$C and an NH$ sb4$OH concentration of 0.48 M was the best. Thermal stability of low resistivity, In- or Ar-doped, rf-sputtered ZnO thin films (thickness 1$ mu$m) was also studied. This was done by heat treating the ZnO films in air, O$ sb2$ and N$ sb2$ at temperature in a range from 200 to 350$ sp circ$C. It was observed that the amount of increase of resistivity at a given temperature decreased as the doping concentration was increased from 0.5 to 5.3 wt.%. For the films containing 2 wt.% In or Al, the resistivity increased as the treating temperature was increased from 200 to 350$ sp circ$C. For the samples treated at 200$ sp circ$C, the increase in resistivity was about 1 order of magnitude.
The high resistivity CdS and low resistivity ZnO thin films were then deposited on electrodeposited CuInSe$ sb2$ to fabricate cells of the form ZnO/CdS(high $ rho$)/CuInSe$ sb2$. For comparison, cells of CdS(low $ rho$)/CdS(high $ rho$)/CuInSe$ sb2$ were also fabricated by evaporation of low resistivity CdS. The CuInSe$ sb2$ films used were treated either in vacuum or Ar. For those treated in vacuum, very poor properties were observed. The properties improved after a post fabrication heat treatment in air, however, the efficiency of these cells was below 2%. The low conversion efficiency was due to the low open circuit voltage. From capacitance-voltage measurements, this was found to be due to a high acceptor concentration on the surface of the vacuum treated CuInSe$ sb2$ films (10$ sp{17}$ cm$ sp{-3}$). For the cells fabricated on the CuInSe$ sb2$ films treated in Ar, photovoltaic effects were present before the air heat treatment. An efficiency of 6.8% was obtained for one of the best cells, sample J8-4 (with low resistivity CdS window). For cells with ZnO window, a conversion efficiency of 6.3% was obtained (cell O51). For these cells, the acceptor concentration in CuInSe$ sb2$ was 10$ sp{16}$ cm$ sp{-3}$, which was one order of magnitude lower than that of CuInSe$ sb2$ films treated in vacuum.
The diffusion length of minority carriers (electrons) in the electrodeposited, p-type CuInSe$ sb2$ was first measured using the photocurrent and capacitance methods. For the vacuum treated CuInSe$ sb2$ films, the electron diffusion length was small (less than 0.1 $ mu$m). For those treated in Ar, values of the electron diffusion length were about 0.5 $ mu$m. These values are close to those reported for evaporated CuInSe$ sb2$ thin films.
Some of the fabricated cells were also studied using an electron beam induced current (EBIC) method. From the EBIC experiments, the effective diffusion lengths of electrons with values greater than 1 $ mu$m were obtained. Considering the surface recombination effect, the electron diffusion length of the electrodeposited CuInSe$ sb2$ was finally found to be 2.4 $ mu$m. This large electron diffusion length was consistent with the high short circuit current density observed in I-V measurements of the electrodeposited CuInSe$ sb2$ cells.
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8

Teng, Chien-Lung. "Investigation of Electrodeposited Magnetite Films : Formation and Characterization." Thesis, Imperial College London, 2008. http://hdl.handle.net/10044/1/4260.

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Анотація:
Magnetite (Fe3O4) is of both scientific and technological interest because of its fascinating magnetic properties. It has a high Curie temperature of 860 K and a theoretical 100% spin polarization at the Fermi level. There are a variety of deposition techniques to form thin films of magnetite, such as molecular beam epitaxy (MBE), pulsed laser deposition (PLD), iron oxidation, sputtering and so on. In comparison with other deposition methods mentioned above, electrodeposition has a key advantage of relatively low processing temperature. The intention of this work was to investigate magnetite (Fe3O4) thin films grown via an electrochemical route by using various kinds of characterization techniques, especially on morphology, chemical composition, structure and magnetic properties. Fe3O4 thin films were obtained by using a galvanostatic or potentiostatic deposition from simple aqueous solutions of ferrous salts. Iron oxide thin films have been grown at different current densities and temperatures onto polycrystalline copper substrates. XRD results indicate that Fe3O4 is formed at 90 oC at an applied current density of 0.05 mA·cm-2. Lower growth temperatures can cause the formation of another phase, a-FeOOH at a certain concentration of Fe2+ and pH buffer. Time-dependent growth of the iron oxides exhibits nucleation and coalescence. In order to obtain uniform Fe3O4 film surface, longer deposition times are needed. The influence of applied potential on the characteristics of the deposited iron oxide was examined. The formation of Fe3O4 in a low potential regime (< 100 mV) vs. gold reference electrode while iron oxyhydroxides such as goethite (a-FeOOH) and lepidocrocite (?-FeOOH) are favoured for E > 100 mV. The magnetic properties of the films were found to be strongly dependent on the deposition potential. The multi-layer structure of Fe3O4/a-FeOOH/Fe3O4 onto NiO/Ni substrates has been demonstrated via successive deposition. A TEM cross-section image shows a-FeOOH is coherently formed between two ferromagnetic layers. ADF-STEM micrographs show that Fe3O4 has a columnar structure and has less composition variation compared to that grown onto a polycrystalline copper substrate. Synchrotron techniques, i.e. x-ray absorption near edge structure (XANES) and x-ray magnetic circular dichroism (XMCD), were performed to examine the iron oxide film. Fe K-edge x-ray absorption spectra demonstrate that the films grown at low potential regime (< 100 mV) have a comparable valency state with the standard Fe3O4 sample. The identification of the iron oxide was further confirmed by using XMCD technique. The calculation of the asymmetry ratio suggests that the total magnetic moment increased with decreasing applied potential. In addition, vibrating sample magnetometer (VSM) data show that the magnetic response is somewhat slower for the iron oxide grown at higher potential regime. A change of pH in the electrolyte does not change the lattice constant and film morphology or texture but does affect particle sizes in Fe3O4 thin films. This decrease with the pH is due to the reaction of FeOH+ ions with molecular oxygen in electrolyte.
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9

Campbell, S. A. "Structural and photoelectrochemical studies of electrodeposited lead dioxide films." Thesis, University of Southampton, 1987. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.378266.

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10

McGregor, Stephen Mark. "Solar cells based on electrodeposited Cds and CdTe films." Thesis, Sheffield Hallam University, 1999. http://shura.shu.ac.uk/20043/.

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The aim of this study was to understand the properties of glass/TCO/CdS/CdTe/metal solar cells, the CdS and CdTe being grown by aqueous electrodeposition. Deposited films and completed cells were characterised using electrical, structural and optical techniques. This report describes the production of well-formed polycrystalline CdS and CdTe with well defined XRD peaks and band gap. Experiments were performed to investigate the pre-conditioning of the CdTe bath on the overall cell performance. Pre-conditioning the CdTe deposition bath was found to improve the Voc value of the completed devices. It has been known for some time that treating the CdTe layer of a CdS/CdTe solar cell with chlorine brings about significant improvements in the efficiency of these devices. This report presents results on a systematic variation of the chlorine concentration within a CdTe deposition bath. Solar simulated I-V measurements of completed devices clearly show that the addition of CdCl[2] to the CdTe deposition bath significantly improved the efficiency values for the glass/TCO/CdS/CdTe/metal devices. The electrical parameter most significantly affected by the addition of chlorine is the J[sc] value. In terms of the Voc performance of the device, this investigation showed that there was a trend of improving Voc with increasing chlorine concentration. Addition of chlorine also produces improvements in the preferred orientation of CdTe films as measured by XRD. Optical absorption results showed a correlation that the minima of the band gap vs. chlorine concentration graph for annealed samples matches up with the maximum in the efficiency and J[sc] graphs. To investigate whether this phenomenon was specific to chlorine or was displayed by other elements, similar experiments were performed with no chlorine inclusion but varying the indium concentration in the deposition bath. Solar simulated I-V measurements of completed devices clearly show that the addition of In[2](SO[4])[3] to the CdTe deposition bath significantly reduced the efficiency values for the glass/TCO/CdS/CdTe/metal devices. The electrical parameter most significantly affected by the addition of indium is the J[sc] value. The addition of indium also had a detrimental effect on the preferred orientation measured by XRD.
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Книги з теми "Electrodeposited film"

1

P, Raffaelle R., and Lewis Research Center, eds. Electrodeposited CuInSe₂ thin film junctions. [Cleveland, Ohio]: National Aeronautics and Space Administration, Lewis Research Center, 1997.

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2

Pontifex, Gregory H. A combined scanning tunnelling microscopy and electron microscopy study of metal electrodeposits isolated from anodic aluminum oxide films and silver colloid particles isolated from a hydrosol. Ottawa: National Library of Canada = Bibliothèque nationale du Canada, 1991.

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3

Electrodeposited CuInSe₂ thin film junctions. [Cleveland, Ohio]: National Aeronautics and Space Administration, Lewis Research Center, 1997.

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4

Effect of Bath Temperature on Structural and Magnetic properties of Electrodeposited Ni-Co-B Magnetic Thin Films. Tiruchengode, India: ASDF International, 2017.

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Частини книг з теми "Electrodeposited film"

1

Wang, Heng, Bing Li, and Zuxin Zhao. "Electrodeposited Si-Al Thin Film as Anode for Li Ion Batteries." In TMS 2014: 143rd Annual Meeting & Exhibition, 891–97. Cham: Springer International Publishing, 2014. http://dx.doi.org/10.1007/978-3-319-48237-8_105.

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2

Wang, Heng, Bing Li, and Zuxin Zhao. "Electrodeposited Si-Al Thin Film as Anode for Li Ion Batteries." In TMS 2014 Supplemental Proceedings, 891–97. Hoboken, NJ, USA: John Wiley & Sons, Inc., 2014. http://dx.doi.org/10.1002/9781118889879.ch105.

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3

Turner, A. K., J. M. Woodcock, M. E. Őzsan, and J. G. Summers. "Stable, High Efficiency Thin Film Solar Cells Based on Electrodeposited Cadmium Telluride." In Tenth E.C. Photovoltaic Solar Energy Conference, 791–93. Dordrecht: Springer Netherlands, 1991. http://dx.doi.org/10.1007/978-94-011-3622-8_202.

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4

Iino, Y. "Effect of Thickness on Grain Growth in Electrodeposited Copper Film by Cyclic Stressing." In Key Engineering Materials, 581–87. Stafa: Trans Tech Publications Ltd., 2005. http://dx.doi.org/10.4028/0-87849-978-4.581.

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5

Lee, Sang Baek, Yung Keun Kim, and Byung Il Kim. "Effect of Colloidal Silica Addition and Pre-Coating on the Microstructure Change of Cathode Copper Electrodeposited Film." In Materials Science Forum, 3931–34. Stafa: Trans Tech Publications Ltd., 2005. http://dx.doi.org/10.4028/0-87849-960-1.3931.

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6

Nasirpouri, Farzad. "Electrodeposited Nanocomposite Films." In Electrodeposition of Nanostructured Materials, 289–310. Cham: Springer International Publishing, 2016. http://dx.doi.org/10.1007/978-3-319-44920-3_7.

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7

Augustin, Arun, Harsha Thaira, K. Udaya Bhat, and K. Rajendra Udupa. "Effect of Electrodeposited Copper Thin Film on the Morphology and Cell Death of E. Coli; an Electron Microscopic Study." In Biotechnology and Biochemical Engineering, 227–32. Singapore: Springer Singapore, 2016. http://dx.doi.org/10.1007/978-981-10-1920-3_25.

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8

Nasirpouri, Farzad. "Electrodeposited Nanocrystalline Films and Coatings." In Electrodeposition of Nanostructured Materials, 261–88. Cham: Springer International Publishing, 2016. http://dx.doi.org/10.1007/978-3-319-44920-3_6.

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9

Bastos, A., Stefan Zaefferer, and Dierk Raabe. "Orientation Microscopy on Nanostructured Electrodeposited NiCo-Films." In THERMEC 2006 Supplement, 953–58. Stafa: Trans Tech Publications Ltd., 2006. http://dx.doi.org/10.4028/0-87849-429-4.953.

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10

Vitina, I., I. Zalite, V. Belmane, J. Grabis, V. Rubene, and O. Kovalova. "Nanodispersed Refractory Compounds in the Electrodeposited Metal Coatings." In Nanostructured Films and Coatings, 103–11. Dordrecht: Springer Netherlands, 2000. http://dx.doi.org/10.1007/978-94-011-4052-2_9.

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Тези доповідей конференцій з теми "Electrodeposited film"

1

Rummaja, Iskandar Dzulkarnain, Muhammad Idzdihar Idris, Radi Husin Ramlee, Zul Atfyi Mohammed Napiah, Marziani Rashid, and Ahmad Muhajer Abdul Aziz. "Effect of pH on Electrochemical, Morphological and Optical Properties of Electrodeposited Molybdenum Sulfide Thin Film." In 2024 IEEE International Conference on Semiconductor Electronics (ICSE), 21–24. IEEE, 2024. http://dx.doi.org/10.1109/icse62991.2024.10681359.

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2

Kobayashi, T., K. Yamazaki, and I. Shohji. "Joining Dissimilar Materials Using Three-Dimensional Electrodeposited Film." In 2022 International Conference on Electronics Packaging (ICEP). IEEE, 2022. http://dx.doi.org/10.23919/icep55381.2022.9795513.

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3

Read, D. T., Y. W. Cheng, and R. Geiss. "Mechanical Behavior of Electrodeposited Copper Film at Elevated Temperatures." In ASME 2004 International Mechanical Engineering Congress and Exposition. ASMEDC, 2004. http://dx.doi.org/10.1115/imece2004-61320.

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The temperature dependence of the strength of a thin copper electrodeposit has been measured, by microtensile testing, from room temperature to 150 °C. The ultimate tensile strength decreased from around 240 MPa at room temperature to just above 200 MPa at 150 °C. The yield strength followed a similar trend. Elongation to failure increased slightly with temperature. The Young’s modulus, as measured by the unload-load slope, was well below the values expected based on averaging single-crystal elastic constants at all test temperatures. The effect of strain rate on strength at room temperature, using a range of over a decade, was low, with a weak trend upward.
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4

Dalavi, D. S., S. S. Kalagi, S. S. Mali, A. J. More, R. S. Patil, and P. S. Patil. "Electrochromic properties of electrodeposited tungsten oxide (WO3) thin film." In SOLID STATE PHYSICS: Proceedings of the 56th DAE Solid State Physics Symposium 2011. AIP, 2012. http://dx.doi.org/10.1063/1.4710074.

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5

Dhakal, Rabin, Joshua Kofford, Brian Logue, Michael Ropp, David Galipeau, and Xingzhong Yan. "Electrodeposited AlSb compound semiconductor for thin film solar cells." In 2009 34th IEEE Photovoltaic Specialists Conference (PVSC). IEEE, 2009. http://dx.doi.org/10.1109/pvsc.2009.5411427.

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6

Kayishaer, Aihemaiti, Caroline Duc, Nathalie Redon, Claire Magnenet, Boris Lakard, and Sophie Lakard. "Room Temperature Ammonia Sensor Based on Electrodeposited Polyaniline Film." In 2023 IEEE SENSORS. IEEE, 2023. http://dx.doi.org/10.1109/sensors56945.2023.10325142.

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7

Ganchev, Maxim, Dimiter Dimitrov, Stanka Stankova, Atanas Katerski, Iliya Gadjov, Olga Volobujeva, Arvo Mere, Sergey Bereznev, and Malle Krunks. "Electrodeposited molybdenum oxide coatings for thin film chalcopyrite solar cells." In 10th Jubilee International Conference of the Balkan Physical Union. Author(s), 2019. http://dx.doi.org/10.1063/1.5091317.

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8

Yang, Ying, Juan Han, Xiaohui Ning, and Hongsheng Tang. "Effect of potential on the conductivity of electrodeposited Cu2O film." In SPIE Optics + Photonics for Sustainable Energy, edited by Shaohua Shen. SPIE, 2015. http://dx.doi.org/10.1117/12.2189800.

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9

Lohar, G. M., J. V. Thombare, S. K. Shinde, V. J. Fulari, and S. S. More. "Photoelectrochemical cell performance of electrodeposited iron doped zinc selenide thin film." In 2013 International Conference on Energy Efficient Technologies for Sustainability (ICEETS). IEEE, 2013. http://dx.doi.org/10.1109/iceets.2013.6533417.

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10

Pandey, R. K., Archana Mishra, Meera Ramrakhani, and B. P. Chandra. "Optical properties of electrodeposited CuInSe2-based thin film photoelectrochemical solar cells." In Symposium on Integrated Optics, edited by Ghassan E. Jabbour and Hideomi Koinuma. SPIE, 2001. http://dx.doi.org/10.1117/12.424753.

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Звіти організацій з теми "Electrodeposited film"

1

Zangari, Giovanni. Prediction and Control of Atomic Ordering in Electrodeposited Binary Alloy Films: Direct Synthesis of L10 Magnetic Phases. Office of Scientific and Technical Information (OSTI), August 2023. http://dx.doi.org/10.2172/1994142.

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2

CIGS-Based Solar Cells Prepared from Electrodeposited Precursor Films (Fact Sheet). Office of Scientific and Technical Information (OSTI), June 2011. http://dx.doi.org/10.2172/1018090.

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