Статті в журналах з теми "Electrochemical silicon etching"
Оформте джерело за APA, MLA, Chicago, Harvard та іншими стилями
Ознайомтеся з топ-50 статей у журналах для дослідження на тему "Electrochemical silicon etching".
Біля кожної праці в переліку літератури доступна кнопка «Додати до бібліографії». Скористайтеся нею – і ми автоматично оформимо бібліографічне посилання на обрану працю в потрібному вам стилі цитування: APA, MLA, «Гарвард», «Чикаго», «Ванкувер» тощо.
Також ви можете завантажити повний текст наукової публікації у форматі «.pdf» та прочитати онлайн анотацію до роботи, якщо відповідні параметри наявні в метаданих.
Переглядайте статті в журналах для різних дисциплін та оформлюйте правильно вашу бібліографію.
Syari’ati, Ali, and Veinardi Suendo. "Effect of Electrochemical Reaction Enviroment on the Surface Morphology and Photoluminescence of Porous Silicon." Materials Science Forum 737 (January 2013): 60–66. http://dx.doi.org/10.4028/www.scientific.net/msf.737.60.
Повний текст джерелаCao, Dao Tran, Cao Tuan Anh, and Luong Truc Quynh Ngan. "Vertical-Aligned Silicon Nanowire Arrays with Strong Photoluminescence Fabricated by Metal-Assisted Electrochemical Etching." Journal of Nanoelectronics and Optoelectronics 15, no. 1 (January 1, 2020): 127–35. http://dx.doi.org/10.1166/jno.2020.2684.
Повний текст джерелаAl-Jubouri, Furqan Saleh, Hamida I. Salman, and Ahmed K. Al-Kadumi. "The effective of time etching and different acids on the morphological porous silicon." IOP Conference Series: Earth and Environmental Science 1120, no. 1 (December 1, 2022): 012045. http://dx.doi.org/10.1088/1755-1315/1120/1/012045.
Повний текст джерелаKi, Bugeun, Keorock Choi, Kyunghwan Kim, and Jungwoo Oh. "Electrochemical local etching of silicon in etchant vapor." Nanoscale 12, no. 11 (2020): 6411–19. http://dx.doi.org/10.1039/c9nr10420h.
Повний текст джерелаMartin Kralik, Michaela Hola, and Stanislav Jurecka. "Optical Properties of Porous Silicon Solar Cells for Use in Transport." Communications - Scientific letters of the University of Zilina 21, no. 3 (August 15, 2019): 53–58. http://dx.doi.org/10.26552/com.c.2019.3.53-58.
Повний текст джерелаKim, Jeong, Sang Wook Park, In Sik Moon, Moon Jae Lee, and Dae Won Kim. "Porous Silicon Layer by Electrochemical Etching for Silicon Solar Cell." Solid State Phenomena 124-126 (June 2007): 987–90. http://dx.doi.org/10.4028/www.scientific.net/ssp.124-126.987.
Повний текст джерелаJin, Dahee, Ju-Myung Kim, Ran Yi, and Ji-Guang Zhang. "A New Approach to Synthesis of Porous Si Anode for Li-Ion Batteries Via Organic-Solvent Assisted Etching." ECS Meeting Abstracts MA2024-02, no. 5 (November 22, 2024): 570. https://doi.org/10.1149/ma2024-025570mtgabs.
Повний текст джерелаSadowski, Horst, Reinhard Helbig, and Stefan Rysy. "Electrochemical etching of silicon carbide." Journal of Solid State Electrochemistry 3, no. 7-8 (September 10, 1999): 437–45. http://dx.doi.org/10.1007/s100080050179.
Повний текст джерелаMohd Radzi, Ahmad Afif Safwan, M. A. Yarmo, M. Rusop, and Saifollah Abdullah. "Surface Morphology and Si 2p Binding Energy Investigation of Multilayer Porous Silicon Nanostructure." Advanced Materials Research 620 (December 2012): 17–21. http://dx.doi.org/10.4028/www.scientific.net/amr.620.17.
Повний текст джерелаLiu, Lan, Yan Xue, Xiao Ming Ren, and Rui Zhen Xie. "Influence of Electrochemical Etching Parameters on Morphology of Porous Silicon." Advanced Materials Research 1055 (November 2014): 68–72. http://dx.doi.org/10.4028/www.scientific.net/amr.1055.68.
Повний текст джерелаChiang, Chao-Ching, and Philip Nathaniel Immanuel. "Investigating Quantum Confinement and Enhanced Luminescence in Nanoporous Silicon: A Photoelectrochemical Etching Approach Using Multispectral Laser Irradiation." Optics 5, no. 4 (November 13, 2024): 465–76. http://dx.doi.org/10.3390/opt5040035.
Повний текст джерелаKuntyi, Оrest, Galyna Zozulya, and Mariana Shepida. "Porous Silicon Formation by Electrochemical Etching." Advances in Materials Science and Engineering 2022 (May 27, 2022): 1–15. http://dx.doi.org/10.1155/2022/1482877.
Повний текст джерелаWang, Guo Zheng, Xiao Na Li, Feng Yuan Yu, Yao Zhang, Yong Zhao Liang, Jin Chai, Ji Kai Yang, and Qing Duo Duanmu. "Formation of High Aspect Ratio Macropore Array on N-Type Silicon." Applied Mechanics and Materials 397-400 (September 2013): 47–51. http://dx.doi.org/10.4028/www.scientific.net/amm.397-400.47.
Повний текст джерелаKouassi, Sebastien, Gael Gautier, Sebastien Desplobain, Loic Coudron, and Laurent Ventura. "Macroporous Silicon Electrochemical Etching for Gas Diffusion Layers Applications: Effect of Processing Temperature." Defect and Diffusion Forum 297-301 (April 2010): 887–92. http://dx.doi.org/10.4028/www.scientific.net/ddf.297-301.887.
Повний текст джерелаYang, Xiaoyu, Ling Tong, Lin Wu, Baoguo Zhang, Zhiyuan Liao, Ao Chen, Yilai Zhou, Ying Liu, and Ya Hu. "Research progress of silicon nanostructures prepared by electrochemical etching based on galvanic cells." Journal of Physics: Conference Series 2076, no. 1 (November 1, 2021): 012117. http://dx.doi.org/10.1088/1742-6596/2076/1/012117.
Повний текст джерелаHuang, Z. P., N. Geyer, L. F. Liu, M. Y. Li, and P. Zhong. "Metal-assisted electrochemical etching of silicon." Nanotechnology 21, no. 46 (October 25, 2010): 465301. http://dx.doi.org/10.1088/0957-4484/21/46/465301.
Повний текст джерелаKolasinski, Kurt W. "Silicon nanostructures from electroless electrochemical etching." Current Opinion in Solid State and Materials Science 9, no. 1-2 (February 2005): 73–83. http://dx.doi.org/10.1016/j.cossms.2006.03.004.
Повний текст джерелаSundaram, K. B., and Hsiao‐Wei Chang. "Electrochemical Etching of Silicon by Hydrazine." Journal of The Electrochemical Society 140, no. 6 (June 1, 1993): 1592–97. http://dx.doi.org/10.1149/1.2221607.
Повний текст джерелаHorányi, T. S., and P. Tüttö. "Electrochemical etching and profiling of silicon." Applied Surface Science 63, no. 1-4 (January 1993): 316–21. http://dx.doi.org/10.1016/0169-4332(93)90114-q.
Повний текст джерелаKrálik, Martin, and Martin Kopani. "Analysis of porous silicon structures using FTIR and Raman spectroscopy." Journal of Electrical Engineering 74, no. 3 (June 1, 2023): 218–27. http://dx.doi.org/10.2478/jee-2023-0028.
Повний текст джерелаHassan, Mariam M., Makram A. Fakhri, and Salah Aldeen Adnan. "Structural and Morphological Properties of Nano Photonic Silicon Structure for Photonics Applications." Defect and Diffusion Forum 398 (January 2020): 29–33. http://dx.doi.org/10.4028/www.scientific.net/ddf.398.29.
Повний текст джерелаHao, Xiuchun, Peiling He, and Xin Li. "Selective electrochemical etching of cantilever-type SOI-MEMS devices." Nanotechnology and Precision Engineering 5, no. 2 (June 1, 2022): 023003. http://dx.doi.org/10.1063/10.0010296.
Повний текст джерелаCHUAH, L. S., Z. HASSAN, F. K. YAM, and H. ABU HASSAN. "STRUCTURAL AND OPTICAL FEATURES OF POROUS SILICON PREPARED BY ELECTROCHEMICAL ANODIC ETCHING." Surface Review and Letters 16, no. 01 (February 2009): 93–97. http://dx.doi.org/10.1142/s0218625x09012342.
Повний текст джерелаLee, Soohong, and Eunjoo Lee. "Characterization of Nanoporous Silicon Layer to Reduce the Optical Losses of Crystalline Silicon Solar Cells." Journal of Nanoscience and Nanotechnology 7, no. 11 (November 1, 2007): 3713–16. http://dx.doi.org/10.1166/jnn.2007.019.
Повний текст джерелаLee, Soohong, and Eunjoo Lee. "Characterization of Nanoporous Silicon Layer to Reduce the Optical Losses of Crystalline Silicon Solar Cells." Journal of Nanoscience and Nanotechnology 7, no. 11 (November 1, 2007): 3713–16. http://dx.doi.org/10.1166/jnn.2007.18058.
Повний текст джерелаBEYDOUN, Nour, Mihai LAZAR, and Xavier GASSMANN. "SiC Plasma and Electrochemical Etching for Integrated Technology Processes." Romanian Journal of Information Science and Technology 2023, no. 2 (March 27, 2023): 238–46. http://dx.doi.org/10.59277/romjist.2023.2.10.
Повний текст джерелаSu, Mingru, Shuai Liu, Jinlin Li, Aichun Dou, Weihang Feng, Jinchuan Bai, and Yunjian Liu. "Effect of Hydrofluoric Acid Etching on Performance of Si/C Composite as Anode Material for Lithium-Ion Batteries." Journal of Nanomaterials 2018 (October 17, 2018): 1–6. http://dx.doi.org/10.1155/2018/3930812.
Повний текст джерелаOu, Wei Ying, Lei Zhao, Zhao Chen Li, Hong Wei Diao, and Wen Jing Wang. "Optimization Study on Preparation of Macroporous Silicon on P-Type Silicon Substrate by Electrochemical Etching." Advanced Materials Research 488-489 (March 2012): 1343–47. http://dx.doi.org/10.4028/www.scientific.net/amr.488-489.1343.
Повний текст джерелаOu, Wei Ying, Lei Zhao, Zhao Chen Li, Hong Wei Diao, and Wen Jing Wang. "Macroporous Silicon Fabricated by HF Electrochemical Etching for Antireflective Application in Solar Cells." Advanced Materials Research 463-464 (February 2012): 1410–14. http://dx.doi.org/10.4028/www.scientific.net/amr.463-464.1410.
Повний текст джерелаYusop, S. F. M., N. Azaman, Hartini Ahmad Rafaie, S. Amizam, Saifollah Abdullah, and Mohamad Rusop. "Effect of Etching Time on Electrical and Optical Properties of Porous Silicon." Advanced Materials Research 667 (March 2013): 397–401. http://dx.doi.org/10.4028/www.scientific.net/amr.667.397.
Повний текст джерелаGAVRILIN, E. Yu, Yu B. GORBATOV, V. V. STARKOV, and A. F. VYATKIN. "TWO-DIMENSIONAL ORDERED POROUS STRUCTURES FOR PHOTONIC CRYSTALS OBTAINED USING DEEP ANODIC ETCHING AND FOCUSED ION BEAM TECHNIQUES." International Journal of Nanoscience 03, no. 01n02 (February 2004): 81–85. http://dx.doi.org/10.1142/s0219581x04001845.
Повний текст джерелаAbed, M. A., M. M. Uonis, G. G. Ali, and I. B. Karomi. "Deposition and characterization of carbon nanotubes on porous silicon by PECVD." Digest Journal of Nanomaterials and Biostructures 18, no. 1 (February 20, 2023): 235–41. http://dx.doi.org/10.15251/djnb.2023.181.235.
Повний текст джерелаKadhim, Ayad Jumaah, Muneer H. Jaduaa Alzubaidy, and Ahmed N. Abd. "Morphological and Structural Properties of Porous Silicon (PSi)." International Letters of Chemistry, Physics and Astronomy 81 (February 2019): 11–17. http://dx.doi.org/10.18052/www.scipress.com/ilcpa.81.11.
Повний текст джерелаKadhim, Ayad Jumaah, Muneer H. Jaduaa Alzubaidy, and Ahmed N. Abd. "Morphological and Structural Properties of Porous Silicon (PSi)." International Letters of Chemistry, Physics and Astronomy 81 (February 1, 2019): 11–17. http://dx.doi.org/10.56431/p-3vjl65.
Повний текст джерелаZhang, Jing, Faqiang Zhang, Mingsheng Ma, and Zhifu Liu. "Fabrication of Highly Ordered Macropore Arrays in p-Type Silicon by Electrochemical Etching: Effect of Wafer Resistivity and Other Etching Parameters." Micromachines 16, no. 2 (January 28, 2025): 154. https://doi.org/10.3390/mi16020154.
Повний текст джерелаAbramova, E. N., A. M. Khort, A. G. Yakovenko, Yu V. Syrov, V. N. Tsigankov, E. A. Slipchenko та V. I. Shvets. "Peculiarities of pore initiation in р-type silicon during its electrochemical etching". Доклады Академии наук 487, № 1 (19 липня 2019): 32–35. http://dx.doi.org/10.31857/s0869-5652487132-35.
Повний текст джерелаLi, Xiao Na, Guo Zheng Wang, Feng Yuan Yu, Yao Zhang, Yong Zhao Liang, Jin Chai, Ji Kai Yang, and Qing Duo Duanmu. "Current Automatic Control Technology for n-Type Macroporous Silicon Photo-Electrochemical Etching." Applied Mechanics and Materials 423-426 (September 2013): 113–16. http://dx.doi.org/10.4028/www.scientific.net/amm.423-426.113.
Повний текст джерелаAmjad Hussein Jassem. "Effect of photo chemical etching and electro chemical etching on the topography of porous silicon wafers surfaces." Tikrit Journal of Pure Science 24, no. 4 (August 4, 2019): 52–56. http://dx.doi.org/10.25130/tjps.v24i4.399.
Повний текст джерелаLIU, FENG-MING, BIN REN, JIA-WEI YAN, BING-WEI MAO, and ZHONG-QUN TIAN. "IN SITU PHOTOLUMINESCENCE STUDIES OF SILICON SURFACES DURING PHOTOELECTROCHEMICAL ETCHING PROCESSES." Surface Review and Letters 08, no. 03n04 (June 2001): 327–35. http://dx.doi.org/10.1142/s0218625x01001129.
Повний текст джерелаZhao, Mingrui, Rajesh Balachandran, Zach Patterson, Roman Gouk, Steven Verhaverbeke, Farhang Shadman, and Manish Keswani. "Contactless bottom-up electrodeposition of nickel for 3D integrated circuits." RSC Advances 5, no. 56 (2015): 45291–99. http://dx.doi.org/10.1039/c5ra03683f.
Повний текст джерелаPtashchenko, Fedor. "Electrochemical etching of porous silicon – DFT modeling." Computational Materials Science 198 (October 2021): 110695. http://dx.doi.org/10.1016/j.commatsci.2021.110695.
Повний текст джерелаAstrova, E. V., and A. A. Nechitaĭlov. "Boundary effect in electrochemical etching of silicon." Semiconductors 42, no. 4 (April 2008): 470–74. http://dx.doi.org/10.1134/s1063782608040179.
Повний текст джерелаHwang, Yongha, O. H. Paydar, M. Ho, J. B. Rosenzweig, and R. N. Candler. "Electrochemical macroporous silicon etching with current compensation." Electronics Letters 50, no. 19 (September 2014): 1373–75. http://dx.doi.org/10.1049/el.2014.1662.
Повний текст джерелаHuster, R., and A. Stoffel. "Vertically structured silicon membrane by electrochemical etching." Sensors and Actuators A: Physical 23, no. 1-3 (April 1990): 899–903. http://dx.doi.org/10.1016/0924-4247(90)87055-n.
Повний текст джерелаAntunez, E. E., J. O. Estevez, J. Campos, M. A. Basurto, and V. Agarwal*. "Effect of magnetic field on the formation of macroporous silicon: structural and optical properties." MRS Proceedings 1617 (2013): 63–68. http://dx.doi.org/10.1557/opl.2013.1165.
Повний текст джерелаTaurbayev, Y. T., K. A. Gonchar, A. V. Zoteev, Victor Timoshenko, Z. Zh Zhanabayev, V. E. Nikulin, and T. I. Taurbayev. "Electrochemical Nanostructuring of Semiconductors by Capillary-Cell Method." Key Engineering Materials 442 (June 2010): 1–6. http://dx.doi.org/10.4028/www.scientific.net/kem.442.1.
Повний текст джерелаISMAIL, RAID A. "EFFECT OF ETCHING TIME ON THE CHARACTERISTICS OF LOW RESISTIVITY POROUS Si DEVICES." Modern Physics Letters B 27, no. 30 (November 21, 2013): 1350217. http://dx.doi.org/10.1142/s0217984913502175.
Повний текст джерелаHadi, Hasan A. "Impact of Etching Time on Ideality Factor and Dynamic Resistance of Porous Silicon Prepared by Electrochemical Etching (ECE)." International Letters of Chemistry, Physics and Astronomy 72 (January 2017): 28–36. http://dx.doi.org/10.18052/www.scipress.com/ilcpa.72.28.
Повний текст джерелаHadi, Hasan A. "Impact of Etching Time on Ideality Factor and Dynamic Resistance of Porous Silicon Prepared by Electrochemical Etching (ECE)." International Letters of Chemistry, Physics and Astronomy 72 (January 27, 2017): 28–36. http://dx.doi.org/10.56431/p-65kuo9.
Повний текст джерелаTomaa, Ghasaq Ali, and Alaa Jabbar Ghazai. "The Effect of Etching Time On Structural Properties of Porous Quaternary AlInGaN Thin Films." Iraqi Journal of Physics (IJP) 19, no. 50 (September 1, 2021): 77–83. http://dx.doi.org/10.30723/ijp.v19i50.665.
Повний текст джерела