Готові списки джерел за темами / Electrochemical Atomic Layer Epitaxy

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Добірка наукової літератури з теми "Electrochemical Atomic Layer Epitaxy"

Автор: Grafiati

Опубліковано: 10 березня 2023

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Статті в журналах з теми "Electrochemical Atomic Layer Epitaxy"

Gregory, Brian W., and John L. Stickney. "Electrochemical atomic layer epitaxy (ECALE)." Journal of Electroanalytical Chemistry and Interfacial Electrochemistry 300, no. 1-2 (February 1991): 543–61. http://dx.doi.org/10.1016/0022-0728(91)85415-l.

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Huang, Baoming M. "Electrochemical atomic layer epitaxy of semiconductor CdTe thin films." Proceedings, annual meeting, Electron Microscopy Society of America 51 (August 1, 1993): 824–25. http://dx.doi.org/10.1017/s0424820100149957.

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Semiconductor thin films have important applications in areas such as photovoltaics and luminescent displays. Electrodeposition of these films is a potential low cost, room temperature production technique. Electrochemical atomic layer epitaxy (ECALE) involves alternatively depositing individual element monolayer amount per ECALE cycle, taking advantage of the under-potential deposition (UPD) phenomena.A series of CdTe thin films have been deposited using ECALE methodology in an electrochemical flow cell system. The 0.5 mM Te4+, Te blank, 5mM Cd2+, and Cd blank solutions are made with purasonic grade TeO2 and CdSO4, research grade electrolyte, and 18 M ohm water. The gold foil substrates are cleaned electrochemically before each experiment. An ECALE cycle starts with depositing monolayer amount Te, rinsing with Te blank, then depositing monolayer amount of Cd, and ending with rinsing with Cd blank solution. The whole flow cell system is controlled by a computer with house-written codes, and the deposition process can be fully programmed.

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GREGORY, B. W., and J. L. STICKNEY. "ChemInform Abstract: Electrochemical Atomic Layer Epitaxy (ECALE)." ChemInform 22, no. 22 (August 23, 2010): no. http://dx.doi.org/10.1002/chin.199122019.

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Manhabosco, Taise M., Shaul Aloni, Tevye R. Kuykendall, Sara M. Manhabosco, Ana Bárbara Batista, Jaqueline S. Soares, Ana Paula M. Barboza, Alan B. de Oliveira, Ronaldo J. C. Batista, and Jeffrey J. Urban. "Electrochemical Atomic Layer Epitaxy Deposition of Ultrathin SnTe Films." Recent Progress in Materials 1, no. 4 (September 6, 2019): 1. http://dx.doi.org/10.21926/rpm.1904005.

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Suggs, D. Wayne, Ignacio Villegas, Brian W. Gregory, and John L. Stickney. "Formation of compound semiconductors by electrochemical atomic layer epitaxy." Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 10, no. 4 (July 1992): 886–91. http://dx.doi.org/10.1116/1.577689.

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Carlà, F., M. Innocenti, F. Loglio, M. Muniz-Miranda, P. R. Salvi, C. Gellini, M. Cavallini, et al. "Combined electrochemical atomic layer epitaxy and microcontact printing techniques." Materials Science in Semiconductor Processing 12, no. 1-2 (February 2009): 21–24. http://dx.doi.org/10.1016/j.mssp.2009.07.004.

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Venkatasamy, Venkatram, Nagarajan Jayaraju, Stephen M. Cox, Chandru Thambidurai, Mkhulu Mathe, and John L. Stickney. "Deposition of HgTe by electrochemical atomic layer epitaxy (EC-ALE)." Journal of Electroanalytical Chemistry 589, no. 2 (April 2006): 195–202. http://dx.doi.org/10.1016/j.jelechem.2006.02.006.

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Venkatasamy, Venkatram, and Nagarajan Jayaraju. "Formation of HgCdTe by Electrochemical Atomic Layer Epitaxy (EC-ALE)." ECS Transactions 3, no. 5 (December 21, 2019): 95–110. http://dx.doi.org/10.1149/1.2357200.

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Mathe, Mkhulu K., Steve M. Cox, Venkatram Venkatasamy, Uwe Happek, and John L. Stickney. "Formation of HgSe Thin Films Using Electrochemical Atomic Layer Epitaxy." Journal of The Electrochemical Society 152, no. 11 (2005): C751. http://dx.doi.org/10.1149/1.2047547.

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Gregory, Brian W., D. Wayne Suggs, and John L. Stickney. "Conditions for the Deposition of CdTe by Electrochemical Atomic Layer Epitaxy." Journal of The Electrochemical Society 138, no. 5 (May 1, 1991): 1279–84. http://dx.doi.org/10.1149/1.2085773.

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Дисертації з теми "Electrochemical Atomic Layer Epitaxy"

Fernandes, Valéria Cristina. "Estudo dos processos de eletrodeposição de filmes finos de Se, ZnSe e PbS." Universidade Federal de São Carlos, 2008. https://repositorio.ufscar.br/handle/ufscar/6099.

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This work describes studies on the underpotential deposition (UPD) of selenium, zinc, as well for Zn/Se systems deposited on polycrystalline Pt electrodes in acid solutions. The effects of Zn presence in the Se dissolution process were also investigated in the UPD and bulk potential range, 0.6 and 0.03 V respectively. The measurements were carried out using cyclic voltammetry and electrochemical quartz crystal microbalance (EQCM). Furthermore Lead sulfide (PbS) multilayers were grown on a single crystal Ag(111) substrate by Electrochemical Atomic Layer Epitaxy (ECALE) method. For Zn UPD in sulfuric acid, two different processes were observed, which are attributed to the dissolution of submonolayer of Znads and H-atoms adsorbed on the electrode surface. For Se UPD was observed that hydrogen desorption were completely inhibited indicating that Se film recovered the Pt surface. The deposition of UPD Se in perchloric acid solution showed the transference of 4 electrons with 1.4 and 1.12 active sites of Pt occupied by 1 Se ad-atom in the UPD and bulk potential range, respectively. In the evaluation of the Se monolayers dissolution process formed at 0.03 V during 2000 s a process not mentioned in the literature it was observed which was evaluated by the technique MECQ. The experimental results obtained by this technique allowed to end that the dissolution process occurred by two stages, and the first involved the participation of 6e-. The dissolution mechanism with 6e- happens with the participation of water in the dissolution process of Se, leading to the formation of an oxygenated selenium compound which in next step undergo slow oxidation and is dissolved as soluble Se(VI) species. Then the total dissolution process of Se occurs in a six-electron transfer reaction. For Se deposition in the Zn presence the dissolution charges associated with Se UPD increase, indicating that the presence of Zn favors the deposition of UPD Se. In the case of PbS multilayers on Ag (111) the voltammetric analysis of the first PbUPD and SUPD peaks indicates a mechanism of two-dimensional growth, which is consistent with epitaxial growth. Electrochemical stripping measurements indicate that the amount of Pb and S deposited in a given number of cycles is a function of the number of cycles employed, again suggesting a layer-by-layer growth. This result indicates that the amount of Pb and S in these films corresponds to the stoichiometric 1:1 ratio, indicating the formation of a compound.
Este trabalho descreve os estudos da deposicao em regime de subtensao (DRS) de Se, Zn, assim como para sistemas Zn/Se depositados sobre eletrodos policristalinos de Pt em solucoes acidas. Os efeitos da presenca de Zn no processo de dissolucao de Se tambem foram investigados em uma regiao de potenciais de DRS e deposicao massiva 0,6 V e 0,03 V, respectivamente. As medidas foram realizadas usando voltametria ciclica e microbalanca eletroquimica de cristal de quartzo (MECQ). Alem disso, multicamadas de sulfeto de chumbo (PbS) foram crescidas sobre substrato de Ag(111) utilizando o metodo de deposicao eletroquimica de camadas atomicas epitaxiais (ECALE). Para a DRS de Zn em meio de acido sulfurico dois processos distintos foram observados os quais foram atribuidos a submonocamadas de Znads e atomos de H adsorvidos sobre a superficie do eletrodo. Para a DRS do Se observou-se a inibicao completa da dessorcao de hidrogenio o que indicou recobrimento total da superficie de Pt por ad-atomo de Se. A deposicao de Se em meio de acido perclorico mostrou a transferencia de 4 eletrons com 1,4 e 1,12 sitios da Pt ocupados por cada ad-atomo de Se, em potenciais de deposicao em DRS e sobretensao, respectivamente. Na avaliacao do processo de dissolucao das monocamadas de Se formadas a 0,03 V e por um tempo de deposicao de 2000 s um processo nao mencionado na literatura foi observado o qual foi avaliado pela tecnica MECQ. Os resultados experimentais obtidos por esta tecnica permitiram concluir que o processo de dissolucao do Se ocorria por duas etapas, sendo que a primeira envolvia a participacao de uma 6 eletrons e a segunda de 4 eletrons. O mecanismo de dissolucao com 6 eletrons ocorre com a participacao de agua no processo de dissolucao do Se, levando a formacao de compostos de Se oxigenados, os quais em uma etapa posterior sofrem uma oxidacao lenta e se dissolvem como especies soluveis de Se(VI). Entao o processo total de dissolucao de Se ocorre em uma reacao de transferencia de 6 eletrons. Ja para a deposicao de Se na presenca de Zn pode-se concluir, devido ao aumento da carga de dissolucao da DRS de Se, que a presenca de Zn favorece o processo de deposicao do Se. No caso das multicamadas de PbS o estudo voltametrico das primeiras camadas de Pb DRS e S DRS indicam um mecanismo de crescimento bidimensional, que e consistente com o crescimento epitaxial. As cargas medidas no processo de dissolucao das camadas indicaram que a quantidade de Pb e S depositados para um dado numero de ciclos e uma funcao do numero de ciclos realizados, sugerindo novamente um crescimento camada por camada Este resultado sugere que a quantidade de Pb e S nos filmes possuem uma relacao estequiometrica de 1:1, indicando a formacao de um composto.

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Yeo, Philip Sinclair. "Role of gallium precursors in atomic layer epitaxy of GaAs." Thesis, National Library of Canada = Bibliothèque nationale du Canada, 1998. http://www.collectionscanada.ca/obj/s4/f2/dsk1/tape11/PQDD_0019/MQ51515.pdf.

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Gong, Yukun. "Electrochemical Atomic Layer Etching of Copper and Ruthenium." Case Western Reserve University School of Graduate Studies / OhioLINK, 2021. http://rave.ohiolink.edu/etdc/view?acc_num=case1625783128128316.

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Arès, Richard. "Growth mechanisms of atomic layer epitaxy studied in situ by reflectance difference spectroscopy." Thesis, National Library of Canada = Bibliothèque nationale du Canada, 1997. http://www.collectionscanada.ca/obj/s4/f2/dsk3/ftp04/nq24289.pdf.

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Venkatraman, Kailash. "Electrochemical Atomic Layer Deposition of Metals for Applications in Semiconductor Interconnect Metallization." Case Western Reserve University School of Graduate Studies / OhioLINK, 2019. http://rave.ohiolink.edu/etdc/view?acc_num=case1543839404490434.

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Watanabe, Joy Kimi. "Silicon preparation techniques for nucleation and growth studies of zinc sulfide deposited by atomic layer epitaxy." Diss., The University of Arizona, 1992. http://hdl.handle.net/10150/185938.

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Zinc sulfide with a direct bandgap of 3.6 eV is a potential candidate as blue-light emitting diodes and lasers. Initial growth of ZnS on Si(100) substrates by atomic layer epitaxy (ALE), a deposition technique in which film growth ideally proceeds in a 2-dimensional, layer-by-layer manner, has been investigated. The interaction between the first layer of atoms of the film and the substrate surface initiates film growth and affects the resulting structure. Work has focused on the effects of surface composition, (particularly on the role of sulfur) on the initial growth of ZnS on Si(100), and thus the chemical composition must be well controlled and characterized. Three methods have been used to process Si(100) substrates. The first was a wet chemical clean with either HF or H₂O passivation followed by a low temperature (700-800°C) anneal in UHV. The second processing method was ion sputter cleaning with a post-sputter anneal at 800-900°C. The third technique irradiated substrates held in UHV with a beam from a KrF excimer laser. Initial layers of ZnS (from Zn and H₂S) were then deposited onto processed substrates. Samples were characterized by in-situ angle resolved x-ray photoelectron spectroscopy (ARXPS) to determine the chemical composition of the surface and also the coverage and thickness of contamination and film layers. The main impurities on the surface were oxygen and carbon. The first two processing techniques had difficulty in either eliminating those impurities or caused additional contamination. Elimination of the impurities was achieved using excimer laser irradiation with a pre-dose of reactive gas. The substrate surface could also be chemically modified in a controlled manner using excimer laser irradiation. Deposition studies of initial sulfur and zinc layers onto the processed substrates determined the temperature during ALE growth should be held at 250-310°C. Uniform coverage of both sulfur and zinc was difficult to obtain, but experiments indicated sulfur adhesion improved with the presence of oxygen, and zinc adhesion improved when oxide or sulfide layers were present on the surface.

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Bonnet, Nicéphore. "A multiscale study of atomic interactions in the electrochemical double layer applied to electrocatalysis." Thesis, Massachusetts Institute of Technology, 2011. http://hdl.handle.net/1721.1/76914.

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Thesis (Ph. D.)--Massachusetts Institute of Technology, Dept. of Nuclear Science and Engineering, 2011.
Cataloged from PDF version of thesis.
Includes bibliographical references (p. 171-182).
This work is an integrated study of chemical and electrostatic interactions in the electrochemical double layer, and their significance for accurate prediction of reaction kinetics in electrocatalysis. First, a kinetic model of the oxygen reduction reaction (ORR) on platinum, in connexion with first-principles techniques, is developed to illustrate that a self-consistent description of kinetics and reactant coverages on the surface can help to propose new mechanisms when energy prediction and experimental uncertainties still prevail. ORR kinetic limitation is often rationalized in terms of surface poisoning by parallel reactions, namely water oxidation, and/or as a result of the demanding requirements of Sabatier's principle. The sensitivity analysis presented here suggests that additional mechanisms may have to be considered, in particular self-poisoning by transient 02 dissociation in certain regimes. A common assumption of kinetic studies is that the only effect of electrode bias is to modify the electron chemical potential. To refine our understanding of bias effects in the double layer, a correction code applied to plane-wave DFT techniques is used to realistically simulate an electrochemical setup under potential control as an electrode with variable explicit charge screened by ions in solution. The scheme is first used to shed light on the nature of the stretching frequency shift of CO on Pt(1 11) as a function of electrode potential. It is concluded that the Stark effect interpretation is correct, and more generally, that electrochemistry on metal surfaces may often be correctly described in terms of perturbation theory. Then, hydrogen under-potential deposition on platinum is computed as a function of pH. It is shown that modification of the surface dipole by hydrogen electrosorption couples with the surface charge to make the adsorbant chemical potential pH-dependent. This observation is related to the concept of electrosorption valency. The octahedric-to-cubic nanoparticle shape transition resulting from hydrogen adsorption upon cathodic sweep is then predicted to be more pronounced in alkaline media. Inclusion of surface dipole effects is therefore relevant for surface stability and shape-dependent electroactivity. Third, the correction scheme is applied to develop a model of water dielectric saturation in the strong fields of the double layer. The water molecule dipole is computed in real space and Monte-Carlo simulation techniques are performed for the statistics of proton arrangement. DFT is seen to overestimate the permittivity of ice, confirming the difficulty of water simulation at the first-principles level. However, saturation effects are believed to be qualitatively captured and their influence on reaction kinetics in the double layer from the Frumkin effect is assessed. The impact is rather moderate with at most a factor of 3 in exchange current predictions. Finally, DFT occasional errors in chemisorption energies remain an important drawback for heterogeneous catalysis studies. Here, the vdW-DF functional for inclusion of long-range, dispersion interactions is tested on the prediction of CO adsorption on transition metals. Observed improvement on binding energies and adsorption site ordering comes at the expense of the correct description of metal energetics, suggesting the need for alternative schemes in this case. In conclusion, the purpose of this work is to help the design of electrocatalysts by providing a framework to assess chemical and electrostatic contributions to the kinetics, informed by the complexity and uncertainties attached to the surface and double layer structure.
by Nicéphore Bonnet.
Ph.D.

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Xaba, Nqobile. "Development of Anode Materials Using Electrochemical Atomic Layer Deposition (E-ALD) for Energy Applications." University of the Western Cape, 2018. http://hdl.handle.net/11394/6390.

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Philosophiae Doctor - PhD (Chemistry)
Nanomaterials have been found to undeniably possess superior properties than bulk structures across many fields of study including natural science, medicine, materials science, electronics etc. The study of nano-sized structures has the ability to address the current world crisis in energy demand and climate change. The development of materials that have various applications will allow for quick and cost effective solutions. Nanomaterials of Sn and Bi are the core of the electronic industry for their use in micro packaging components. These nanomaterials are also used as electrocatalysts in fuel cells and carbon dioxide conversion, and as electrodes for rechargeable sodium ion batteries. There are various methods used to make these nanostructures including solid state methods, hydrothermal methods, sputtering, and vacuum deposition techniques. These methods lack the ability to control the structure of material at an atomic level to fine tune the properties of the final product. This study aims to use E-ALD technique to synthesis thin films of Sn and Bi for various energy applications, and reports the use of E-ALD in battery applications for the first time. Thin films were synthesised by developing a deposition sequence and optimising this deposition sequence by varying deposition parameters. These parameters include deposition potential, and concentration of precursor solution. The thin films were characterised using cyclic voltammetry, linear sweep voltammetry, chronoamperometry for electrochemical activity. These were also characterised using scanning electron microscope for morphology, x-ray diffraction for crystal phases, energy dispersive spectroscopy for elemental mapping, and focused ion beam scanning electron microscope for thickness. The elemental content was analysed using electron probe micro analysis and inductively coupled plasma mass spectrometry. The electrochemical impedance charge and discharge profile were used for electrochemical battery tests.

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Mkhohlakali, Andile Cyril. "Development of nanostructured electrocatalysts using electrochemical atomic layer deposition technique for the direct liquid fuel cells By." University of Western Cape, 2020. http://hdl.handle.net/11394/7346.

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Philosophiae Doctor - PhD
The depletion of fossil fuel resources such as coal and the concern of climatic change arising from the emission of greenhouse gases (GHG) and global warming [1] lead to the identification of the 'hydrogen economy' as one of the renewable energy sources and possible futuristic energy conversion solution. Sources of hydrogen as fuel such as water through electrolysis and liquid organic fuel (Hydrogen carriers) have been found as potential game-changers and received increased attention, due to its low-carbon emission.

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Trombley, Jeremy Brian. "Studies of Electrochemical Charge Transfer between Metals and Aqueous Solutions Using Atomic Force Microscopy." Case Western Reserve University School of Graduate Studies / OhioLINK, 2014. http://rave.ohiolink.edu/etdc/view?acc_num=case1386048981.

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Книги з теми "Electrochemical Atomic Layer Epitaxy"

Suntola, T., and M. Simpson, eds. Atomic Layer Epitaxy. Dordrecht: Springer Netherlands, 1990. http://dx.doi.org/10.1007/978-94-009-0389-0.

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T, Suntola, and Simpson M, eds. Atomic layer epitaxy. Glasgow: Blackie, 1990.

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Kääriäinen, Tommi. Atomic layer deposition: Principles, characteristics, and nanotechnology applications. 2nd ed. Beverly, MA: Scrivener Publishing, 2013.

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Sherman, Arthur. Atomic layer deposition for nanotechnology: An enabling process for nanotechnology fabrication. Ivoryton, Conn: Ivoryton Press, 2008.

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International Symposium on Atomic Layer Epitaxy and Related Surface Processes (3rd 1994 Sendai, Japan). ALE-3: Proceedings of the third International Symposium on Atomic Layer Epitaxy and Related Surface Processes, Sendai, Japan, 25-27 May 1994. Amsterdam: North-Holland, 1994.

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Suntola, T. Atomic Layer Epitaxy. Springer, 2011.

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Atomic Layer Epitaxy. Springer, 1989.

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Atomic Layer Epitaxy of Copper. Uppsala Universitet, 1999.

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Sherman, Arthur, David Cameron, Tommi Kääriäinen, and Marja-Leena Kääriäinen. Atomic Layer Deposition: Principles, Characteristics, and Nanotechnology Applications. Wiley & Sons, Limited, John, 2013.

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Частини книг з теми "Electrochemical Atomic Layer Epitaxy"

Varazo, Kris, Travis L. Wade, Billy H. Flowers, Marcus D. Lay, Uwe Happek, and John L. Stickney. "Morphology in Electrochemical Atomic Layer Epitaxy." In Thin Films: Preparation, Characterization, Applications, 83–93. Boston, MA: Springer US, 2002. http://dx.doi.org/10.1007/978-1-4615-0775-8_6.

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Innocenti, M., G. Pezzatini, F. Loglio, and M. L. Foresti. "Overview on the Ultrathin Films Formation of II-VI Compound Semiconductors on Silver by Electrochemical Atomic Layer Epitaxy." In Thin Films: Preparation, Characterization, Applications, 95–112. Boston, MA: Springer US, 2002. http://dx.doi.org/10.1007/978-1-4615-0775-8_7.

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Leskelä, M., and L. Niinistö. "Chemical aspects of the ALE process." In Atomic Layer Epitaxy, 1–39. Dordrecht: Springer Netherlands, 1990. http://dx.doi.org/10.1007/978-94-009-0389-0_1.

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Pakkanen, T. "Theoretical aspects of ALE growth mechanisms." In Atomic Layer Epitaxy, 40–62. Dordrecht: Springer Netherlands, 1990. http://dx.doi.org/10.1007/978-94-009-0389-0_2.

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Mason, N. J. "Comparison of ALE with other techniques." In Atomic Layer Epitaxy, 63–109. Dordrecht: Springer Netherlands, 1990. http://dx.doi.org/10.1007/978-94-009-0389-0_3.

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Tischler, M. A., and S. M. Bedair. "Atomic layer epitaxy of III-V compounds." In Atomic Layer Epitaxy, 110–54. Dordrecht: Springer Netherlands, 1990. http://dx.doi.org/10.1007/978-94-009-0389-0_4.

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Yao, T. "Atomic layer epitaxy of II-VI compounds." In Atomic Layer Epitaxy, 155–80. Dordrecht: Springer Netherlands, 1990. http://dx.doi.org/10.1007/978-94-009-0389-0_5.

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Aliano, Antonio, Giancarlo Cicero, Hossein Nili, Nicolas G. Green, Pablo García-Sánchez, Antonio Ramos, Andreas Lenshof, et al. "Atomic Layer Epitaxy (ALE)." In Encyclopedia of Nanotechnology, 171. Dordrecht: Springer Netherlands, 2012. http://dx.doi.org/10.1007/978-90-481-9751-4_100045.

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Pessa, Markus. "Atomic Layer Epitaxy of Compound Semiconductors." In Thin Film Growth Techniques for Low-Dimensional Structures, 221–23. Boston, MA: Springer US, 1987. http://dx.doi.org/10.1007/978-1-4684-9145-6_12.

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Leskelä, M. "Electroluminescent Materials Grown by Atomic Layer Epitaxy." In Springer Proceedings in Physics, 204–9. Berlin, Heidelberg: Springer Berlin Heidelberg, 1989. http://dx.doi.org/10.1007/978-3-642-93430-8_44.

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Тези доповідей конференцій з теми "Electrochemical Atomic Layer Epitaxy"

Usui, Akira, and Haruo Sunakawa. "Chloride Atomic Layer Epitaxy of InGaP." In 1988 International Conference on Solid State Devices and Materials. The Japan Society of Applied Physics, 1988. http://dx.doi.org/10.7567/ssdm.1988.d-8-2.

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Bedair, S. M. "Recent progress in atomic layer epitaxy." In Critical Review Collection. SPIE, 1993. http://dx.doi.org/10.1117/12.141398.

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Dip, Anthony, Peter C. Colter, G. M. Eldallal, and Salah M. Bedair. "Atomic-layer epitaxy of device-quality Al0.3Ga0.7As." In Semiconductors '92, edited by Roger J. Malik, Chris J. Palmstrom, Salah M. Bedair, Harold G. Craighead, and Randall L. Kubena. SPIE, 1992. http://dx.doi.org/10.1117/12.137644.

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Hashemi, Majid, J. Ramdani, Brian McDermott, Kimberly G. Reid, John R. Hauser, and Salah M. Bedair. "Planar-doped structures by atomic layer epitaxy." In High-Speed Electronics and Device Scaling, edited by Lester F. Eastman. SPIE, 1990. http://dx.doi.org/10.1117/12.20918.

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Yao, Takafumi. "Atomic Layer Epitaxy Of II-VI Compounds." In 1988 Semiconductor Symposium, edited by Anupam Madhukar. SPIE, 1988. http://dx.doi.org/10.1117/12.947375.

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Creighton, J. R., and C. M. Truong. "Surface Chemistry of GaAs Atomic Layer Epitaxy." In Microphysics of Surfaces: Nanoscale Processing. Washington, D.C.: Optica Publishing Group, 1995. http://dx.doi.org/10.1364/msnp.1995.mthc1.

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Анотація:

Atomic layer epitaxy (ALE) is a technique which, in principle, yields unparalleled deposition uniformity with precise (i.e. monolayer) thickness control. The technique has been used to deposit compound semiconductors, e.g. GaAs, although the success has not been universally good. In many examples the ALE operating “window” is very small or non-existent. Unintentional carbon doping is another problem which has limited the utility of this technique. In order to address the problems limiting GaAs ALE, we have investigated the surface chemical properties of the standard deposition precursors on GaAs(100) using a variety of surface science diagnostics. Results of these experiments have shed light on the mechanisms of precursor decomposition which lead to film growth and carbon doping. For instance, the kinetics of trimethylgallium (TMGa) decomposition on the Ga-rich and As-rich surfaces, measured by TPD, are in semiquantitative agreement with ALE results. This indicates that the dominant growth mechanism during ALE is heterogeneous in nature. We have also investigated the mechanism of carbon incorporation when using TMGa. Normally, a small fraction of adsorbed methyl (CH3) groups dehydrogenate into methylene (CH2) groups, which are a likely precursor to carbon incorporation. This adsorbate was characterized with vibrational spectroscopies and static SIMS. The rate of CH3 dehydrogenation is consistent with the carbon doping levels obtained during ALE and MOMBE.

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Skogman, R. A. "Atomic layer epitaxy of YBaCuO for optoelectronic applications." In Progress in High-Temperature Superconducting Transistors and Other Devices II. SPIE, 1992. http://dx.doi.org/10.1117/12.2321837.

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Skogman, Richard A., Mohamed A. Khan, James M. Van Hove, Amal R. Bhattarai, and W. T. Boord. "Atomic-layer epitaxy of YBaCuO for optoelectronic applications." In Proc Int - DL Tentative, edited by Rajendra Singh, Martin Nisenoff, and Davor Pavuna. SPIE, 1992. http://dx.doi.org/10.1117/12.56682.

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Suda, Yoshiyuki, Yasuhiro Misato, and Daiju Shiratori. "Si Atomic-Layer-Epitaxy Using Thermally-Cracked-Si2H6." In 1998 International Conference on Solid State Devices and Materials. The Japan Society of Applied Physics, 1998. http://dx.doi.org/10.7567/ssdm.1998.a-9-4.

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Hite, Jennifer, Neeraj Nepal, Virginia R. Anderson, Jaime A. Freitas, Michael A. Mastro, and Charles R. Eddy. "Atomic layer epitaxy for quantum well nitride-based devices." In SPIE OPTO, edited by Manijeh Razeghi. SPIE, 2016. http://dx.doi.org/10.1117/12.2209111.

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Звіти організацій з теми "Electrochemical Atomic Layer Epitaxy"

Gat, R., T. I. Hukka, and M. P. D'Evelyn. Progress Toward Atomic Layer Epitaxy of Diamond Using Radical Chemistry. Fort Belvoir, VA: Defense Technical Information Center, May 1993. http://dx.doi.org/10.21236/ada265409.

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Hukka, T. I., R. E. Rawles, and M. P. D'Evelyn. Novel Method for Chemical Vapor Deposition and Atomic Layer Epitaxy Using Radical Chemistry. Fort Belvoir, VA: Defense Technical Information Center, June 1992. http://dx.doi.org/10.21236/ada252873.

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Eres, G. Kinetic modeling of the atomic layer epitaxy window in group IV semiconductor growth. Office of Scientific and Technical Information (OSTI), February 1995. http://dx.doi.org/10.2172/10113197.

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Davis, Robert F., Salah Bedair, Jill Little, Robert Macintosh, and Joe Sumakeris. Atomic Layer Epitaxy of Silicon, Silicon/Germanium and Silicon Carbide via Extraction/Exchange Processes. Fort Belvoir, VA: Defense Technical Information Center, January 1991. http://dx.doi.org/10.21236/ada231348.

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Davis, Robert F., and Salah Bedair. Atomic Layer Epitaxy Group IV Materials: Surface Processes, Thin Films, Devices and Their Characterization. Fort Belvoir, VA: Defense Technical Information Center, June 1991. http://dx.doi.org/10.21236/ada238506.

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Trilayer Josephson junctions produced by atomic layer-by-layer FORCE (Flexible Oxide Reaction Controlled Epitaxy). Final report. Office of Scientific and Technical Information (OSTI), September 1995. http://dx.doi.org/10.2172/399704.

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