Готові списки джерел за темами / Electrical-optical modulator

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Добірка наукової літератури з теми "Electrical-optical modulator"

Автор: Grafiati

Опубліковано: 12 жовтня 2024

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Статті в журналах з теми "Electrical-optical modulator"

M. A. Eid, Mahmoud, Ashraf S. Seliem, Ahmed Nabih Zaki Rashed, Abd El-Naser A. Mohammed, Mohamed Yassin Ali, and Shaimaa S. Abaza. "The key management of direct/external modulation semiconductor laser response systems for relative intensity noise control." Indonesian Journal of Electrical Engineering and Computer Science 21, no. 2 (February 1, 2021): 968. http://dx.doi.org/10.11591/ijeecs.v21.i2.pp968-977.

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<p><span>This study outlines the management of either direct or external modulation semiconductor laser systems for the key solution of bit rate up to 25 Gb/s under relative intensity noise (RIN) control. The bias and modulation peak currents based laser rate equations are optimized to achieve max Q factor and min bit error rate (BER) using first proposed model and optical/electrical signal power, optical/electrical signal to noise ratio are also enhanced using second proposed model. The percentage enhancement ratio in max. Q-factor and min. BER using first proposed model ranges from 53.25 % to 71.63 % in compared to the previous model. In the same way, by using second proposed model, the electrical signal power at optical receiver is enhanced within the range of 48.66 % to 68.88 % in compared to the previous model. Optical signal/noise ratio (OSNR) after optical fiber cable (OFC), signal/noise ratio (SNR) after electrical filter are measured with using different electrical pulse generators and electrical modulators at the optimization stage. The first proposed model reported better max. Q and min. BER values than the previous model. In addition to the second proposed model (direct modulation) has outlined better optical/electrical signal power than the previous model, while max. Q, min. BER values are kept constant. It is found that non return to zero pulse generator has presented better signal power than other pulse generators by using second proposed model. As well as the mixed of raised cosine pulse generator with external modulator reported max. Q, min. BER with other pulse generators by using first proposed model. OSNR at OFC is optimized by using continuous phase frequency shift keying (CPFSK) electrical modulator, While SNR at optical receiver is optimized by using phase shift keying (PSK) electrical modulator.</span></p>

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Zhou, Zhipeng, Zean Li, Cheng Qiu, Yongyi Chen, Yingshuai Xu, Xunyu Zhang, Yiman Qiao, et al. "A Design of High-Efficiency: Vertical Accumulation Modulators Based on Silicon Photonics." Nanomaterials 13, no. 24 (December 16, 2023): 3157. http://dx.doi.org/10.3390/nano13243157.

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On-chip optical modulators, which are capable of converting electrical signals into optical signals, constitute the foundational components of photonic devices. Photonics modulators exhibiting high modulation efficiency and low insertion loss are highly sought after in numerous critical applications, such as optical phase steering, optical coherent imaging, and optical computing. This paper introduces a novel accumulation-type vertical modulator structure based on a silicon photonics platform. By incorporating a high-K dielectric layer of ZrO2, we have observed an increase in modulation efficiency while maintaining relatively low levels of modulation loss. Through meticulous study and optimization, the simulation results of the final device structure demonstrate a modulation efficiency of 0.16 V·cm, with a mere efficiency–loss product of 8.24 dB·V.

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Supasai, Wisut, Apirat Siritaratiwat, Chavis Srichan, Suksan Suwanarat, Narong Amorntep, Mongkol Wannaprapa, Nuttachai Jutong, et al. "Enhancing modulation performance by design of hybrid plasmonic optical modulator integrating multi-layer graphene and TiO₂ on silicon waveguides." Nanotechnology 35, no. 31 (May 17, 2024): 315201. http://dx.doi.org/10.1088/1361-6528/ad43f2.

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Abstract A novel way to enhance modulation performance is through the design of a hybrid plasmonic optical modulator that integrates multi-layer graphene and TiO2 on silicon waveguides. In this article, a design is presented of a proposed modulator based on the use of the two-dimensional finite difference eigenmode solver, the three-dimensional eigenmode expansion solver, and the CHARGE solver. Leveraging inherent graphene properties and utilizing the subwavelength confinement capabilities of hybrid plasmonic waveguides (HPWs), we achieved a modulator design that is both compact and highly efficient. The electrical bandwidth f 3dB is at 460.42 GHz and it reduces energy consumption to 12.17 fJ/bit with a modulator that functions at a wavelength of 1.55 μm. According to our simulation results, our innovation was the optimization of the third dielectric layer’s thickness, setting the stage to achieve greater modulation depths. This synergy between graphene and HPWs not only augments subwavelength confinement, but also optimizes light–graphene interaction, culminating in a markedly enhanced modulation efficiency. As a result, our modulator presents a high extinction ratio and minimized insertion loss. Furthermore, it exhibits polarization insensitivity and a greater bandwidth. Our work sets a new benchmark in optical communication systems, emphasizing the potential for the next generation of chip-scale with high-efficiency optical modulators that significantly outpace conventional graphene-based designs.

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Thomson, David J., Weiwei Zhang, Ke Li, Kapil Debnath, Shenghao Liu, Bigeng Chen, Muhammad K. Husain, et al. "Silicon photonics for high data rate applications -INVITED." EPJ Web of Conferences 238 (2020): 01005. http://dx.doi.org/10.1051/epjconf/202023801005.

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The high speed conversion of signals between the optical and electrical domains is crucial for many key applications of silicon photonics. Electro-optic modulators integrated with electronic drive amplifiers are typically used to convert an electrical signal to the optical domain. Design of these individual elements is important to achieve high performance, however a true optimisation requires careful co-design of the photonic and electronic components considering the properties of each other. Here we present our recent results in this area together with a MOSCAP type modulator with the potential for high speed, high efficiency and highly linear modulation.

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Gosciniak, Jacek. "Ultra-compact nonvolatile plasmonic phase change modulators and switches with dual electrical–optical functionality." AIP Advances 12, no. 3 (March 1, 2022): 035321. http://dx.doi.org/10.1063/5.0082094.

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Programmable photonic integrated circuits (PICs) are the foundation of on-chip optical technologies, with the optical modulators being one of the main building blocks of such programmable PICs. However, most of the available modulators suffer from high power consumption, low response time, and large footprint. Additionally, they show a large resistance modulation; thus, they require high switching voltage. In consequence, they operate much above CMOS-compatible voltages of 1.2 V and with high insertion losses. Furthermore, the state and information they carry are lost once the power is turned off—so, they are volatile. Thus, realizing modulators and phase shifters that overcome all those problems still remains a challenge. To overcome some of those limitations, the nonvolatile phase change materials implemented in the plasmonic structures are proposed that can offer many advantages as result of high electric field interaction with nonvolatile materials. Consequently, novel plasmonic nonvolatile switches proposed here can operate by phase modulation, absorption modulation, or both and under zero-static power. For the first time, the nonvolatile phase modulator is proposed that requires only 230 nm long active waveguide to attain full π phase delay with an insertion loss below even 0.12 dB. Simultaneously, under the requirements, it can operate as an amplitude modulator with an extinction ratio exceeding 2.2 dB/ μm while the insertion losses are kept below 0.185 dB/ μm. Furthermore, the heating mechanism can be based on the external heaters, internal heaters, electrical (memory) switching, or optical switching mechanism, which provide a lot of flexibility in terms of a design and requirements.

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Tahersima, Mohammad H., Zhizhen Ma, Yaliang Gui, Shuai Sun, Hao Wang, Rubab Amin, Hamed Dalir, Ray Chen, Mario Miscuglio, and Volker J. Sorger. "Coupling-enhanced dual ITO layer electro-absorption modulator in silicon photonics." Nanophotonics 8, no. 9 (August 14, 2019): 1559–66. http://dx.doi.org/10.1515/nanoph-2019-0153.

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AbstractElectro-optic signal modulation provides a key functionality in modern technology and information networks. Photonic integration has not only enabled miniaturizing photonic components, but also provided performance improvements due to co-design addressing both electrical and optical device rules. The millimeter to centimeter footprint of many foundry-ready electro-optic modulators, however, limits density scaling of on-chip photonic systems. To address these limitations, here we experimentally demonstrate a coupling-enhanced electro-absorption modulator by heterogeneously integrating a novel dual-gated indium-tin-oxide phase-shifting tunable absorber placed at a silicon directional coupler region. This concept allows utilizing the normally parasitic Kramers-Kronig relations here in an synergistic way resulting in a strong modulation depth to insertion loss ratio of about 1. Our experimental modulator shows a 2 dB extinction ratio for a just 4 μm short device at 4 V bias. Since no optical resonances are deployed, this device shows spectrally broadband operation as demonstrated here across the entire C-band. In conclusion, we demonstrate a modulator utilizing strong index change from both real and imaginary parts of active material enabling compact and high-performing modulators using semiconductor near-foundry materials.

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Feng, Song, and Bin Xue. "Micro-Nano Electro-Optic Modulator Structure Based on the Si/SiGe/Si Material." Journal of Nanoelectronics and Optoelectronics 15, no. 6 (June 1, 2020): 693–99. http://dx.doi.org/10.1166/jno.2020.2796.

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The modulation power consumption and the modulation efficiency are the key parameters of the electro-optic modulator, which directly affect the electro-optic modulator's photoelectric properties. Improving the performance of the electro-optic modulator, a micro-nano electro-optic modulator structure based on the Si/SiGe/Si material is proposed in this paper, which has low power consumption and high efficiency. After the plasma dispersion effects and the thermo-optic effects are analyzed, we can know that the performance of the electro-optic modulator could be affected by the carrier concentration and the temperature of modulator. Silicon Germanium (SiGe) material is attached to the common Silicon (Si) electro-optic modulator, and a large injection ratio is obtained from the Si/SiGe/Si double hetero-junction. With the modulation region's carrier concentration rise, and the working voltage and the power consumption of modulator all are reduced. The jugged active region structure is attached to the common Si electro-optic modulator, and the probability of inelastic collision among carriers is decreased, so the temperature rise of modulator can be reduced. The thermal-optic effects are weakened, and the modulation efficiency is increased. The simulation results show that the working voltage of the jugged SiGe modulator is less than that of the Silicon modulator at the same refractive index differences, and the jugged SiGe modulator has lower modulation power consumption; the jugged SiGe modulator's effective refractive index differences are more than the Silicon modulator's effective refractive index differences at the same working voltage, and the jugged SiGe modulator has higher modulation efficiency. Therefore, this jugged SiGe modulator is a micro-nano electro-optic modulator with lower power consumption and higher efficiency.

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Wu, Zhaoyang, Shuqing Lin, Siyuan Yu, and Yanfeng Zhang. "Submilliwatt Silicon Nitride Thermo-Optic Modulator Operating at 532 nm." Photonics 11, no. 3 (February 27, 2024): 213. http://dx.doi.org/10.3390/photonics11030213.

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Optical phase control is essential for optical beam steering applications. The silicon nitride thermo-optic modulator generally suffers from high electrical power consumption. Microresonator and multipass structures could reduce the electrical power consumption of silicon nitride thermo-optic modulators, with the drawback of a narrow operating bandwidth and high insertion loss. We demonstrate a single-pass silicon nitride thermo-optic phase modulator at 532 nm with low insertion loss and low power consumption, achieving a π phase shift power consumption down to 0.63 mW in a Mach–Zehnder switch. The rise and fall time are around 1.07 ms and 0.67 ms, respectively.

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Ogawa, Kensuke. "Increase in Modulation Speed of Silicon Photonics Modulator with Quantum-Well Slab Wings: New Insights from a Numerical Study." Photonics 11, no. 6 (June 3, 2024): 535. http://dx.doi.org/10.3390/photonics11060535.

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A Silicon Photonics modulator is a high-speed photonic integrated circuit for optical data transmission in high-capacity optical networks. Silicon Photonics modulators in the configuration of a Mach–Zehnder interferometer, in which a PN-junction rib-waveguide phase shifter is inserted in each arm of the interferometer, are studied in this paper because of their superior performance of high-quality optical data generation in a wide range of spectral bands and their simplicity in fabrication processes suitable to production in foundries. Design, fabrication, and fundamental characteristics of Silicon Photonics Mach–Zehnder modulators are reviewed as an introduction to these high-speed PICs on the Silicon Photonics platform. Modulation speed, or modulation bandwidth, is a key performance item, as well as optical loss, in the application to high-speed optical transmitters. Limiting factors on modulation speed are addressed in equations. Electrical resistance–capacitance coupling, which causes optical modulation bandwidth–optical loss trade-off, is the most challenging limiting factor that limits high-speed modulation. Expansion of modulation bandwidth is not possible without increasing optical loss in the conventional approaches. A new idea including quantum-mechanical effect in the design of Silicon Photonics modulators is proposed and proved in computational analysis to resolve the bandwidth loss trade-off. By adding high-mobility quantum-well overlayers to the side slab wings of the rib-waveguide phase shifter, the modulation bandwidth is doubled without increasing optical loss to achieve a 200 Gbaud modulation rate.

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Hu, Xiao, and Jian Wang. "Design of graphene-based polarization-insensitive optical modulator." Nanophotonics 7, no. 3 (February 23, 2018): 651–58. http://dx.doi.org/10.1515/nanoph-2017-0088.

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AbstractBy exploiting the electroabsorption effect of graphene, we present a graphene-based polarization-insensitive optical modulator. The waveguide structure consists of a silica substrate, high-index silicon strip waveguide, Si3N4dielectric spacer, two graphene layers, and two metal electrodes. The modulator performance is comprehensively studied in terms of attenuation, insertion loss, modulation depth, and bandwidth. We achieve broadband >16 dB attenuation graphene-based optical modulator over a 35 nm wavelength range (covering C band) with an imbalance of no >1 dB and insertion loss of <2 dB for transverse magnetic and transverse electric polarized modes. Moreover, the electrical properties such as energy per bit consumption (Ebit) are also studied.

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Більше джерел

Дисертації з теми "Electrical-optical modulator"

Harston, Geofrey Craig. "Swift Electro-Optic Modulator." BYU ScholarsArchive, 2003. https://scholarsarchive.byu.edu/etd/107.

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The Silicon Wafer Integrated Fiber Technology, SWIFT, is a novel platform for the development of photonic devices. SWIFT is comprised of an optical fiber, specifically a D-fiber in this work, embedded into a V-groove etched into a silicon wafer. This provides a method to secure the fiber and allows the use of standard semiconductor industry equipment and techniques in latter processing for device fabrication. The SWIFT platform is used as the basis for the development of a polarimetric in-fiber electro-optic modulator. The modulator is based on the application of a nonlinear optical polymer, NLOP, film into the evanescent field of a D-fiber. In this way electric fields applied to the NLOP can be used to influence the light propagating through the fiber. The two initial processes in fabricating the modulator are accessing the evanescent field of the D-fiber and making a nonlinear optical polymer (NLOP) thin film. To expose the evanescent field the fiber is chemically etched using hydrofluoric acid. During the etching, light transmitted through the fiber is monitored for changes in power and polarization. The measured optical changes are correlated to scanning electron microscope images of the etched fibers to relate the etch depth to the changes in power and polarization. This provides an etching process that is controllable and repeatable. The NLOP films are made from a simple guest-host system based poly(methyl methacrylate) (PMMA) and dispersed red 1 azo dye (DR1), a nonlinear optical dye. The films are poled to align the dye molecules so that the polymer will exhibit nonlinear optical properties. The poled polymers are tested for second harmonic generation, SHG, to insure that they are nonlinearly optically active. Utilizing the SWIFT platform and the monitored etching process, fibers were etched to a desired 0.2 microns from the core on a repeatable basis. A nonlinear optical polymer was synthesized, formed into thin films, and poled. Nonlinear optical activity in the films was verified by SHG testing.

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Carns, Jennifer. "Semiconductor Optical Amplifier as a Phase Modulator for Short-Pulse Synthetic Aperture Ladar and Vibrometry." University of Dayton / OhioLINK, 2012. http://rave.ohiolink.edu/etdc/view?acc_num=dayton1335278035.

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Zhou, Sichao. "Complex Optical Fields Generation Using a Vectorial Optical Field Generator." University of Dayton / OhioLINK, 2016. http://rave.ohiolink.edu/etdc/view?acc_num=dayton1461689435.

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Andrikogiannopoulos, Nikolas I. "RF phase modulation of optical signals and optical/electrical signal processing." Thesis, Massachusetts Institute of Technology, 2006. http://hdl.handle.net/1721.1/42930.

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Анотація:

Thesis (S.M.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 2006.
This electronic version was submitted by the student author. The certified thesis is available in the Institute Archives and Special Collections.
Includes bibliographical references (p. 125-127).
Analog RF phase modulation of optical signals has been a topic of interest for many years, mainly focusing on Intensity Modulation Direct Detection (IMDD). The virtues of coherent detection combined with the advantages of Frequency Modulation, however, have not been explored thoroughly. By employing Frequency Modulation Coherent Detection (FMCD), the wide optical transmission bandwidth of optical fiber can be traded for higher signal-to-noise performance. In this thesis, we derive the FM gain over AM modulation -- the maximum achievable signal-to-noise ratio (by spreading the signal's spectrum) for specific carrier-to-noise ratio. We then employ FMCD for a scheme of remote antennas for which we use optical components and subsystem to perform signal processing such as nulling of interfering signals. The performance of optical processing on different modulation schemes are compared, and some important conclusions are reported relating to the use of conventional FMCD, FMCD with optical discriminator (FMCD O-D), and IMDD. Specifically, the superiority of conventional FMCD is shown; and, on the other hand, the inferiority of FMCD O-D is shown (same performance as IMDD) because of the use of an O-D. Finally, the remote antenna scheme is generalized for N antennas and N users.
by Nikolas I. Andrikogiannopoulos.
S.M.

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Whitson, Michael J. (Michael Joshua). "Fourier-based optical analysis of a membrane mirror spatial light modulator." Thesis, Massachusetts Institute of Technology, 2017. http://hdl.handle.net/1721.1/113448.

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Анотація:

Thesis: M. Eng., Massachusetts Institute of Technology, Department of Electrical Engineering and Computer Science, 2017.
This electronic version was submitted by the student author. The certified thesis is available in the Institute Archives and Special Collections.
Cataloged from student-submitted PDF version of thesis.
Includes bibliographical references (pages 209-214).
This thesis presents the operational theory and engineering numerical models for the operation of a schlieren-like Fourier optical system, used to read out a phase-only spatial light modulator (SLM) for phase to intensity conversion. The computational model, based on discrete cosine transforms, is lightweight enough to be run on standard desktop computers, and flexible enough to allow engineering simulations of arbitrary pixel phase profiles, including empirical datasets. We apply these models to case studies of the design and simulation of pixel geometries and readout system designs for a MEMS-based membrane mirror spatial light modulator (MMSLM), for use as a projection display at a range of visible and infrared wavelengths. Output images, contrast curves and pixel uniformities are simulated for each case study. Simulation results indicate the use of a zero-order blocking spatial filter when high contrast is prioritized, while a zero-order passing spatial filter provides enhanced uniformity of arrays of many pixels. Key engineering rules of thumb and a sample design flow are provided for the design of future phase-contrast projection systems.
by Michael J. Whitson.
M. Eng.

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Nguyen, Thi Hao Nhi. "Broadband mid-infrared integrated electro-optical modulators and photodetectors in SiGe photonic circuits." Electronic Thesis or Diss., université Paris-Saclay, 2024. http://www.theses.fr/2024UPAST108.

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Анотація:

La spectroscopie dans la plage de longueurs d'onde du moyen infrarouge (2-20 µm) est une technique cruciale pour détecter et identifier des substances chimiques et biologiques. Dans ce contexte, les circuits photoniques intégrés à base de silicium (Si) opérant dans cette plage spectrale sont hautement attractifs pour développer des systèmes de spectroscopie moyen infrarouge compacts, qui pourront avoir des applications dans la surveillance environnementale, le diagnostic médical et les communications spatiales. L'intégration de composants photoniques actifs, tels que des modulateurs électro-optiques et des photodétecteurs, est essentielle pour ces systèmes de détection.La première partie de cette thèse explore le développement et la caractérisation des modulateurs électro-optiques moyen infrarouge en utilisant des circuits photoniques SiGe, en mettant l'accent sur les configurations à diodes Schottky et PIN. L'objectif principal était d'exploiter l'effet de dispersion du plasma de porteurs libres pour une modulation optique large bande sur toute la plage spectrale du moyen infrarouge.Tout d'abord, j'ai développé un modèle de simulation prenant en compte à la fois les propriétés optiques et électriques du dispositif pour optimiser l'efficacité de modulation et la conception des électrodes pour la transmission de signaux RF à grande vitesse. Le dispositif a ensuite été fabriqué dans la centrale de technologie du C2N, en utilisant des croissances épitaxiales SiGe du laboratoire L-Ness. Au final, j'ai réussi à démontrer une modulation optique sur une large bande spectrale, allant de 5 µm à 9 µm de longueur d'onde, avec un taux d'extinction de plus de 1 dB à une longueur d'onde de 9 µm et un fonctionnement à haute vitesse jusqu'à 1.5 GHz.De plus, ce travail présente une démonstration expérimentale du premier modulateur SiGe intégré à un guide d'ondes utilisant une diode PIN fonctionnant de 5 à 10 µm de longueur d'onde. À 10 µm, un taux d'extinction de 10 dB est obtenu en injection, alors qu'il atteint 3.2 dB en régime de déplétion. Un fonctionnement à haute vitesse est également obtenu, jusqu'à 1.5 GHz.De manière intéressante, j'ai également mis en évidence, à température ambiante, la présence d'un photocourant généré dans les diodes Schottky et PIN intégrées dans des guides d'ondes SiGe. La photodétection dans le dispositif Schottky est mise en évidence sur une large plage spectrale de 5 à 8 µm, avec une responsivité pouvant atteindre 0,1 mA/W. Par ailleurs, l'utilisation d'impulsions laser entre 50 et 200 ns a indiqué un fonctionnement à une fréquence RF supérieure à 20 MHz. D'autre part, la photodétection dans le dispositif PIN a été caractérisée de 5.2 µm à 10 µm de longueur d'onde, montrant une responsivité interne d'environ 1.6 mA/W et une bande passante électro-optique à 3 dB de 3.2 MHz. Diverses stratégies sont proposées et étudiées pour comprendre l'origine du photocourant. Il est suggéré que l'absorption sub-bande interdite médiée par les dislocations pourrait être responsable de cette photo-réponse dans les photodétecteurs SiGe. Les performances obtenues indiquent que ces dispositifs sont déjà adaptés pour le contrôle du couplage optique sur circuit photonique.En conclusion, ces résultats représentent une avancée significative dans les photodétecteurs intégrés et les modulateurs électro-optiques pour la spectroscopie du moyen infrarouge, ouvrant la voie vers des systèmes spectroscopiques avancés, compacts et entièrement intégrés fonctionnant dans les régions de l'infrarouge lointain
Spectroscopy in the mid-infrared wavelength range (2-20 µm) is a crucial technique for detecting and identifying chemical and biological substances. In this context, silicon (Si)-based integrated photonic circuits operating in this spectral range are highly attractive for developing on-chip mid-infrared spectroscopy systems, which have applications in environmental monitoring, medical diagnosis, and free-space communications. Integrating active photonic components, such as electro-optical modulators and photodetectors, is essential for these sensing systems. The first part of this thesis explores the development and characterization of mid-IR electro-optical modulators using SiGe photonic circuits, with a focus on Schottky and PIN diode configurations. The primary goal was to leverage the free-carrier plasma dispersion effect for broadband optical modulation across the mid-infrared spectral range. First, I developed a simulation model considering both optical and electrical properties of the device to optimize modulation efficiency and the design of traveling electrodes for driving RF signals at high speeds. The device was then fabricated at C2N cleanroom facilities, employing SiGe epitaxial growths from L-Ness lab. In the end, I have successfully demonstrated broadband optical modulation from 5 µm to 9 µm wavelengths, with the highest extinction ratio of over 1 dB at 9 µm wavelength and high-speed operation up to 1.5 GHz. In addition, this work presents an experimental demonstration of the first waveguide-integrated SiGe modulator using a PIN diode operating across a wide spectral range of the mid-infrared region (5-10 µm). At a wavelength of 10 µm, an extinction ratio of up to 10 dB is achieved in injection mode, and 3.2 dB in depletion mode. High-speed operation is also obtained, reaching up to 1.5 GHz. Interestingly, I have shown that the Schottky and PIN diodes embedded in SiGe waveguides also act as photodetectors at room temperature. Photodetection in the Schottky device is achieved over a wide spectral range from 5 to 8 µm, with responsivity up to 0.1 mA/W. Photodetection in pulse regime with laser pulse widths between 50 and 200 ns indicates operation beyond 20 MHz. On the other hand, photodetection in the PIN device has been characterized from 5.2 µm to 10 µm wavelengths, showing an internal responsivity around 1.6 mA/W and a 3 dB electro-optical bandwidth of 32 MHz. Various strategies are proposed and investigated to understand the origin of the photocurrent. It is suggested that sub-bandgap absorption mediated by dislocations could be responsible for this photoresponse in SiGe photodetectors. The achieved performances indicate that these devices are already suitable for on-chip signal monitoring. In conclusion, these results represent a significant advancement in integrated photodetectors and electro-optical modulators for mid-infrared spectroscopy, paving the way toward advanced, compact, and fully integrated spectroscopic systems operating in the long-wave infrared regions

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Franco, Gabriella. "Optical and electrical frequency-modulated studies of nanocrystalline electrodes." Thesis, University of Bath, 1999. https://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.285274.

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Venditti, Michael B. "Temperature dependence of QCSE modulator and detector efficiency for free-space optical interconnect applications." Thesis, National Library of Canada = Bibliothèque nationale du Canada, 1999. http://www.collectionscanada.ca/obj/s4/f2/dsk1/tape8/PQDD_0016/MQ55032.pdf.

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Pasquali, González Elisa Co (Elisa Carolina) 1975. "Wideband optical frequency comb generator using a phase velocity-matched lithium tantalate electro-optic modulator." Thesis, Massachusetts Institute of Technology, 1998. http://hdl.handle.net/1721.1/47719.

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Анотація:

Thesis (M.Eng.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 1998.
Includes bibliographical references (leaves 74-75).
A wideband optical frequency comb generator can be built using an electro-optic modulator that is driven at a frequency of several GHz and that is enclosed in an optical cavity. When light is circulated within the optical cavity, multiple passes through the modulator produce a spectrum centered at the carrier frequency with hundreds of sidebands spaced at the modulation frequency, with a comb span limited only by the material dispersion of the modulator. We present the design, construction, and testing of an optical frequency comb generator using lithium tantalate as a modulator substrate.
by Elisa C. Pasquali González.
M.Eng.

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Krol, Mark Francis 1966. "High contrast, all-optical gallium aluminum indium arsenide multiple quantum well asymmetric reflection modulator at 1.3 μm". Thesis, The University of Arizona, 1992. http://hdl.handle.net/10150/291348.

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A high contrast, low intensity GaAlInAs/AlInAs multiple quantum well asymmetric Fabry-Perot reflection modulator for operation at 1.3 μm has been demonstrated. The reflection modulator takes advantage of the large absorptive and refractive nonlinearities associated with saturating the heavy-hole exciton resonance. We achieve an on/off contrast ratio in excess of 1000:1 (30 dB) and an insertion loss of 2.2 dB at a pump intensity of 30 kW/cm², corresponding to a carrier density of 4.5 x 10¹⁷ cm⁻³ The modulator was demonstrated to have a large operating bandwidth, achieving an on/off contrast ratio of greater than 100:1 over a 5 nm optical band. The operating speed of the modulator was measured and found to approach 1 GHz.

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Книги з теми "Electrical-optical modulator"

1927-, Tamir Theodor, Griffel Giora, Bertoni Henry L, and Weber Research Institute International Symposium on Guided-Wave Optoelectronics: Device Characterization, Analysis, and Design (4th : 1994 : Brooklyn, N.Y.), eds. Guided-wave optoelectronics: Device characterization, analysis, and design. New York: Plenum Press, 1995.

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(Editor), Theodor Tamir, Giora Griffel (Editor), and Henry L. Bertoni (Editor), eds. Guided-Wave Optoelectronics: Device Characterization, Analysis, and Design. Springer, 1995.

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Частини книг з теми "Electrical-optical modulator"

Kumar, Sanjay, Ghanshyam Singh, Vijay Janyani, Oleh Buryy, Ubizskii Serhij, Sugak Dmytro, and Manish Tiwari. "MgO Doped Lithium Niobate Waveguides Based All Optical Modulator." In Lecture Notes in Electrical Engineering, 177–81. Singapore: Springer Singapore, 2018. http://dx.doi.org/10.1007/978-981-10-7395-3_20.

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Agarwal, Saurabh, Jitendra K. Mishra, and Vishnu Priye. "Design and Analysis of Thermo-optic Photonic Crystal Waveguide-Based Optical Modulator." In Lecture Notes in Electrical Engineering, 1001–7. Singapore: Springer Singapore, 2021. http://dx.doi.org/10.1007/978-981-16-2761-3_87.

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Amiri, Iraj Sadegh, and Masih Ghasemi. "Optical Fibre Dispersions and Future Contributions on Electro-optic Modulator System Optimizations." In SpringerBriefs in Electrical and Computer Engineering, 67–68. Cham: Springer International Publishing, 2019. http://dx.doi.org/10.1007/978-3-030-10585-3_6.

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Garrett, Steven L. "Radiation and Scattering." In Understanding Acoustics, 543–620. Cham: Springer International Publishing, 2020. http://dx.doi.org/10.1007/978-3-030-44787-8_12.

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Abstract At this point, we have made a rather extensive investigation into the sounds that excite Helmholtz resonators as well as the departures from equilibrium that propagate as plane waves through uniform or inhomogeneous media. We have not, as yet, dealt with how those sounds are actually produced in fluids. Our experience tells us that sound can be generated by vibrating objects (e.g., loudspeaker cones, stringed musical instruments, drums, bells), by modulated or unstable flows (e.g., jet engine exhaust, whistles, fog horns, speech), by electrical discharges in the atmosphere (i.e., thunder), or by optical absorption (e.g., modulated laser beams). In this chapter, we will develop the perspective and tools that will be used for the calculation of the radiation efficiency of various sources and combinations of sources, like the sound reinforcement system shown in Fig. 12.1.

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"Polymers for Electro-Optic Modulator Waveguides." In Electrical and Optical Polymer Systems, 625–78. CRC Press, 1998. http://dx.doi.org/10.1201/9781482269888-24.

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"Fabrication and Characterization of Electro-optic Polymer Waveguide Modulator for Photonic Applications." In Electrical and Optical Polymer Systems, 611–24. CRC Press, 1998. http://dx.doi.org/10.1201/9781482269888-23.

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Jena, Debdeep. "Heavenly Light: Solar Cells and Photodetectors." In Quantum Physics of Semiconductor Materials and Devices, 753–72. Oxford University PressOxford, 2022. http://dx.doi.org/10.1093/oso/9780198856849.003.0028.

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Abstract This chapter discusses the following questions: • How is light energy converted to electrical energy by semicon- ductor solar cells, and what are the fundamental limits of their efficiencies? • How are optical absorption processes in semiconductors used to make efficient photodetectors, and over what ranges of wave- lengths, timescales, and efficiencies can they operate? • What is the operating principle of semiconductor based optical modulators, and what are their limitations?

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Nadimi Goki, Pantea, Antonio Tufano, Fabio Cavaliere, and Luca Potì. "SOA Model and Design Guidelines in Lossless Photonic Subsystem." In New Advances in Semiconductors [Working Title]. IntechOpen, 2022. http://dx.doi.org/10.5772/intechopen.103048.

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We propose a new practical analytical model to calculate the performance of amplitude-modulated systems, including semiconductor optical amplifiers (SOA). Lower and upper-performance bounds are given in terms of signal quality factor (Q) concerning the input signal pattern. The target is to provide a design tool for gain elements included in photonic integrated circuits (PIC) to compensate for their insertion loss. This subject is a critical issue, for example, in the arrays of optical transmitters with silicon photonics modulators used for interconnection applications. Due to implementation limitations, the design of an SOA embedded in a PIC is considerably different with respect to the use of SOAs as line amplifiers in optical networks. SOA amplified spontaneous emission (ASE) and gain saturation effects have been included in the model, together with the input signal extinction ratio and the receiver electrical filter. Each degradation effect provides its own contribution to the signal integrity in terms of signal-to-noise ratio (SNR) or inter-symbol interference (ISI). The model shows that the SOA operation at low extinction ratios, typical in optical interconnect applications, is substantially different from the operation at higher extinction ratios used in transport networks. The model is validated through numerical simulations and experiments. Finally, two examples are provided for dimensioning a PIC system and optimizing the SOA parameters.

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E. Abejide, Adebayo, Madhava R. Kota, Sushma Pandey, Oluyomi Aboderin, Cátia Pinho, Mário Lima, and António Teixeira. "Direct and External Hybrid Modulation Approaches for Access Networks." In Network-on-Chip [Working Title]. IntechOpen, 2021. http://dx.doi.org/10.5772/intechopen.96085.

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The demand for low-cost high-speed transmission is a major challenge for 5G future networks. To meet this optical communication demand, holistic and painstaking approaches are required in designing a simplified system model. Since the demands for high bandwidth are growing at unprecedented speed as we approach the Zettabyte era, it is crucial to minimize chromatic dispersion (CD) associated to high bit-rate signals. Mitigating CD electronically comes at high cost which may not be compatible with 5G. Photonic Integrated Circuit (PIC) as an enabler for fast speed optical transmission is still undergoing its growth stage and its major speed and efficiency have not yet been attained. However, proper and right combination of components and approaches can potentiate this technology in a more cost-efficient way. Hybrid modulation (HM)-PIC presents a simplified approach in terms of cost and efficiency for 5G networks. Hybridization of existing modulation components and approaches in PIC can enhance the generation of high bit-rate signals without the need for electrical CD compensation. A detailed study of hybrid multilevel signal modulation concept as a valuable solution for Data Centers (DC) high data-rate signals and next-generation Passive Optical Networks (PONs) is proposed.

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Akhai, Shalom, Jagdeep Walia, Bhupinder Singh Bhullar, and Amandeep Singh Wadhwa. "Advances in Bandgap and Conductivity Engineering of Graphene-Based Semiconductors." In Advances in Chemical and Materials Engineering, 211–28. IGI Global, 2024. http://dx.doi.org/10.4018/979-8-3693-8257-8.ch007.

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Graphene, a single layer of carbon atoms, is known for its exceptional electrical, optical, and mechanical properties. However, its lack of a natural bandgap and conductivity control issues limit its use in semiconductor applications. This review explores advancements in bandgap engineering and conductivity management of graphene-based semiconductors, including chemical functionalization, structural modifications, and hybrid materials integration. Strategies for manipulating graphene's conductivity, such as doping, defect engineering, and external field modulation, are also discussed. These innovations are crucial for developing high-performance graphene-based electronic and optoelectronic devices, paving the way for eco-friendly technologies.

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Тези доповідей конференцій з теми "Electrical-optical modulator"

Maldonado-Castillo, L. E., O. Spitz, S. Koyu, M. Berrill, and Y. Braiman. "Coherent High-power Pulsing in a Gain-switched Array of Laser Diodes with Filtered Feedback." In CLEO: Applications and Technology, JTu2A.38. Washington, D.C.: Optica Publishing Group, 2024. http://dx.doi.org/10.1364/cleo_at.2024.jtu2a.38.

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Optimal roundtrip cavity time in gain-switched laser diode array with filtered optical feedback is numerically investigated. Combined pulse intensity and coherence exhibit peaks located at multiples of integer and half-integer of the electrical modulation period.

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Kissa, Karl, R. G. Hunsperger, Charles S. Ih, and X. Wang. "Standing-wave SAW modulator for optical communication." In OSA Annual Meeting. Washington, D.C.: Optica Publishing Group, 1989. http://dx.doi.org/10.1364/oam.1989.thy1.

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Progress has been made on an integrated acoustooptic modulator needed for a proposed optical communication network. The system, which is described elsewhere,1 can employ a standing wave surface acoustic wave (SWSAW) to generate microwave subcarriers needed to multiplex analog and/or digital signals. Previous experiments demonstrated intensity modulation of a guided optical beam at a frequency of 70 MHz by a SWSAW which diffracted light in the Raman-Nath regime.1,2 Intensity modulation of an optical beam at 600 MHz has been observed recently using a Bragg version of this modulator. Superimposing NTSC VHF TV signals on the bias current of the laser diode resulted in mixing between the TV signals and the 600-MHz acoustooptic modulation. Hence, the VHF TV signals were optically upconverted into the UHF range by the acoustooptic modulator. A photodiode was used to convert the UHF signals back into an electrical form. The carrier-to-noise ratio (CNR) was at least 30 dB for the picture carriers of the upconverted TV signals. The observed picture quality was good.

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Liu, Yanming, Mike Grove, and Paul R. Prucnal. "Multiple quantum well waveguide modulator for fiber-optic interconnects." In OSA Annual Meeting. Washington, D.C.: Optica Publishing Group, 1991. http://dx.doi.org/10.1364/oam.1991.wd4.

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It is well-known that electrical I/O bottlenecks in integrated circuits can be remedied with optical interconnects. An optical interconnect link requires a transmitter to convert intrachip electrical signals into optical signals suitable for fiber-optic interchip communication, and a receiver to reconvert optical signals at the fiber output into electrical signals on the chip. We consider an approach using an off-chip laser as an optical power supply, connected via optical fiber to an on-chip electrooptic modulator that imprints the distributed optical power with the desired information. Optical fiber carries the modulated optical signal to a receiver, which may be on a different chip or board. The signal-to-noise ratio (SNR) at the receiver output is 10logSNR = P-L(λ)+ 10log[αβ(ΔV,λ], where P is the laser output power in dBm, the optical loss L in the link is a function of wavelength λ, the parameter α is directly proportional to the detector responsivity and inversely proportional to the bit-rate and receiver noise-equivalent-power, and the modulation depth β is a function of λ as well as the voltage-swing ΔV applied to the on-chip modulator.

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Rubio Rivera, Hector A., Matthew van Niekerk, and Stefan F. Preble. "Silicon Photonic Optical-Electrical-Optical Modulator Neuron Verilog-A Model." In CLEO: Applications and Technology. Washington, D.C.: OSA, 2021. http://dx.doi.org/10.1364/cleo_at.2021.jtu3a.125.

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Okhotnikov, O. G., and F. M. Araújo. "Optical pulse generation by manipulations in FM spectra." In The European Conference on Lasers and Electro-Optics. Washington, D.C.: Optica Publishing Group, 1996. http://dx.doi.org/10.1364/cleo_europe.1996.ctuk50.

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The method of optical pulse generation described here employs an optical switching of CW phase-modulated signal using Sagnac interferometer incorporating asymmetrically located phase modulator. The phase modulator provides a dual function: (i) optical spectrum broadening and (ii) phase shifting between counterpropagating fields to achieve the switching. Owing to nonreciprocity introduced by the phase modulator, the totally reflecting loop becomes totally transmitting, when an instantaneous differential phase shift ΔΦ=π between counterpropagating fields is attained. It was found that in the frequency domain this switching accomplishes spectral filtering required for pulse formation without the need for filters or etalons. FM-sidebands are fully coupled in sense of being tightly locked together with the phase characteristic corresponding to a constant amplitude in the time domain. By suppression of certain frequency sidebands, one can obtain the optical spectrum with frequency components having relative phases that correspond to optical pulses. In other words, spectral filtering allows the phase modulation to be converted into the intensity modulation. The square-pulse-phasc modulation used here instead of sinusoidal modulation is an efficient method for broadening the FM-spectrum. When pulse risetime τ is much shorter then modulation period T, the switching lime window becomes short and thus high value of duty cycle and shorter pulses can be obtained. Since edges of the electrical pulse could be well fitted by linear approximation, optical pulses generated at the edges are essentially chirp-free.

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Fukuda, Hiroshi, Yoshiho Maeda, Toru Miura, Tatsurou Hiraki, and Shinji Matsuo. "Estimation of Optical Modulator Efficiency from Electrical Characteristics." In 2018 IEEE 15th International Conference on Group IV Photonics (GFP). IEEE, 2018. http://dx.doi.org/10.1109/group4.2018.8478692.

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Akagawa, T., S. Akiyama, T. Baba, M. Imai, and T. Usuki. "Electrical and Optical Characteristic Modeling of Silicon Modulator." In 2012 International Conference on Solid State Devices and Materials. The Japan Society of Applied Physics, 2012. http://dx.doi.org/10.7567/ssdm.2012.a-1-3.

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Pezzaniti, J. Larry, Elizabeth A. Sornsin, Russell A. Chipman, and B. Mansoorian. "Characterization of the optical quality and modulating properties of a PLZT modulator through Mueller matrix imaging polarimetry." In Spatial Light Modulators and Applications. Washington, D.C.: Optica Publishing Group, 1995. http://dx.doi.org/10.1364/slma.1995.lthb3.

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The Physics Department at the University of Alabama in Huntsville (UAH) in collaboration with the Electrical and Computer Engineering Department of University of California, San Diego (UCSD) has applied Mueller matrix imaging polarimetry[1] to quantifying the polarization modulating properties of PLZT spatial light modulators. The purpose of this study was to evaluate the optical quality of a wire-bonded transmissive PLZT (9/65/35) modulator array, the uniformity of modulation across pixels, and the cross-talk between adjacent pixels.

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Krol, M. F., R. K. Boncek, T. Ohtsuki, G. Khitrova, B. P. McGinnis, H. M. Gibbs та N. Peyghambarian. "High Contrast, All-Optical GaAlInAs/AlInAs Multiple Quantum Well Reflection Modulator at 1.3 μm". У Quantum Optoelectronics. Washington, D.C.: Optica Publishing Group, 1993. http://dx.doi.org/10.1364/qo.1993.qthb.4.

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Recently, there has been considerable research interest in multiple quantum well (MQW) light modulators which utilize reflective nonlinear asymmetric Fabry-Perot etalons to achieve extremely high contrast ratios with both electrical and optical control.1-3 Here, we demonstrate the first all-optical, high-contrast GaAlInAs MQW asymmetric reflection modulator for operation at 1.3 μm.

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Moshrefzadeh, R. S., K. M. White, C. V. Francis, M. W. Kleinschmit, S. K. Mohapatra, G. T. Boyd, R. C. Williams, K. H. Hahn, and D. W. Dolfi. "High Speed Optical Intensity modulator in a Novel Polymeric Material." In Organic Thin Films for Photonic Applications. Washington, D.C.: Optica Publishing Group, 1993. http://dx.doi.org/10.1364/otfa.1993.fd.3.

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Polymeric materials have the potential to exceed the increasingly demanding requirements for advanced nonlinear optical (NLO) devices such as intensity modulators and electro-optic switches. The benefits offered by polymeric materials include large optical nonlinearities which can lead to lower operating voltages, and lower dielectric constants necessary for high-speed modulation. Polymeric materials can in principle also be integrated with electrical driving circuits and other optical devices such as semiconductor light sources and detectors.

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