Статті в журналах з теми "Electrical interconnect modeling"
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Dong, Chen, Wei Wang, and Maher Rizkalla. "Modeling and Simulation of Carbon Nanotube Interconnect Network." Solid State Phenomena 121-123 (March 2007): 1057–60. http://dx.doi.org/10.4028/www.scientific.net/ssp.121-123.1057.
Повний текст джерелаKumari, B., R. Sharma, and M. Sahoo. "Electro-thermal modeling and reliability analysis of Cu–carbon hybrid interconnects for beyond-CMOS computing." Applied Physics Letters 121, no. 10 (September 5, 2022): 101901. http://dx.doi.org/10.1063/5.0101329.
Повний текст джерелаXu, Yao, Ashok Srivastava, and Ashwani K. Sharma. "Emerging Carbon Nanotube Electronic Circuits, Modeling, and Performance." VLSI Design 2010 (February 17, 2010): 1–8. http://dx.doi.org/10.1155/2010/864165.
Повний текст джерелаPoltz, J. "MODELING OF VLSI INTERCONNECT." COMPEL - The international journal for computation and mathematics in electrical and electronic engineering 13, no. 1 (January 1994): 191–94. http://dx.doi.org/10.1108/eb051872.
Повний текст джерелаCarver, Chase, Norman Seastrand, and Robert Welte. "PWB Z Interconnect Technology - Electrical Performance." International Symposium on Microelectronics 2014, no. 1 (October 1, 2014): 000217–21. http://dx.doi.org/10.4071/isom-tp23.
Повний текст джерелаHazra, Arnab, and Sukumar Basu. "Graphene Nanoribbon as Potential On-Chip Interconnect Material—A Review." C 4, no. 3 (August 30, 2018): 49. http://dx.doi.org/10.3390/c4030049.
Повний текст джерелаMyeong-Eun Hwang, Seong-Ook Jung, and K. Roy. "Slope Interconnect Effort: Gate-Interconnect Interdependent Delay Modeling for Early CMOS Circuit Simulation." IEEE Transactions on Circuits and Systems I: Regular Papers 56, no. 7 (July 2009): 1428–41. http://dx.doi.org/10.1109/tcsi.2008.2006217.
Повний текст джерелаLiao, Weiping, and Lei He. "Microarchitecture Level Interconnect Modeling Considering Layout Optimization." Journal of Low Power Electronics 1, no. 3 (December 1, 2005): 297–308. http://dx.doi.org/10.1166/jolpe.2005.036.
Повний текст джерелаBanan, Behnam, Farhad Shokraneh, Pierre Berini, and Odile Liboiron-Ladouceur. "Electrical performance analysis of a CPW capable of transmitting microwave and optical signals." International Journal of Microwave and Wireless Technologies 9, no. 8 (June 5, 2017): 1679–86. http://dx.doi.org/10.1017/s1759078717000575.
Повний текст джерелаKurokawa, Atsushi, Takashi Sato, Toshiki Kanamoto, and Masanori Hashimoto. "Interconnect Modeling: A Physical Design Perspective." IEEE Transactions on Electron Devices 56, no. 9 (September 2009): 1840–51. http://dx.doi.org/10.1109/ted.2009.2026208.
Повний текст джерелаYAMADA, K., H. KITAHARA, Y. ASAI, H. SAKAMOTO, N. OKADA, M. YASUDA, N. ODA, et al. "Accurate Modeling Method for Cu Interconnect." IEICE Transactions on Electronics E91-C, no. 6 (June 1, 2008): 968–77. http://dx.doi.org/10.1093/ietele/e91-c.6.968.
Повний текст джерелаEL-MOURSY, MAGDY A., and HEBA A. SHAWKEY. "INTERCONNECT MODELING WITH THE EXISTENCE OF LINE INDUCTANCE." Journal of Circuits, Systems and Computers 22, no. 02 (February 2013): 1250082. http://dx.doi.org/10.1142/s021812661250082x.
Повний текст джерелаZhang, Yong Hong, Wei Jin, and Tao Feng. "Nanometer Interconnect Test Structure for Modeling of Process Variation." Advanced Materials Research 960-961 (June 2014): 935–40. http://dx.doi.org/10.4028/www.scientific.net/amr.960-961.935.
Повний текст джерелаGuoan Zhong, Cheng-Kok Koh, and K. Roy. "On-chip interconnect modeling by wire duplication." IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems 22, no. 11 (November 2003): 1521–32. http://dx.doi.org/10.1109/tcad.2003.818303.
Повний текст джерелаMa, James D., and Rob A. Rutenbar. "Interval-Valued Reduced-Order Statistical Interconnect Modeling." IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems 26, no. 9 (September 2007): 1602–13. http://dx.doi.org/10.1109/tcad.2007.895577.
Повний текст джерелаFarrokhi, Maryam, Rahim Faez, Saeed Haji Nasiri, and Bita Davoodi. "Effect of Varying Aspect Ratio on Relative Stability for Graphene Nanoribbon Interconnects." Applied Mechanics and Materials 229-231 (November 2012): 205–9. http://dx.doi.org/10.4028/www.scientific.net/amm.229-231.205.
Повний текст джерелаCarloni, Luca P., Andrew B. Kahng, Swamy V. Muddu, Alessandro Pinto, Kambiz Samadi, and Puneet Sharma. "Accurate Predictive Interconnect Modeling for System-Level Design." IEEE Transactions on Very Large Scale Integration (VLSI) Systems 18, no. 4 (April 2010): 679–84. http://dx.doi.org/10.1109/tvlsi.2009.2014772.
Повний текст джерелаKhitun, Alexander. "Magnetic Interconnects Based on Composite Multiferroics." Micromachines 13, no. 11 (November 17, 2022): 1991. http://dx.doi.org/10.3390/mi13111991.
Повний текст джерелаChun, Sunghoon, Yongjoon Kim, and Sungho Kang. "MDSI: Signal Integrity Interconnect Fault Modeling and Testing for SoCs." Journal of Electronic Testing 23, no. 4 (May 9, 2007): 357–62. http://dx.doi.org/10.1007/s10836-006-0630-0.
Повний текст джерелаTekleab, Daniel, K. F. Poole, R. Singh, D. L. Carroll, and W. R. Harrell. "Modeling early failure in integrated circuit interconnect." Microelectronics Reliability 40, no. 6 (June 2000): 991–96. http://dx.doi.org/10.1016/s0026-2714(99)00339-x.
Повний текст джерелаXu, Zhifei, Blaise Ravelo, Olivier Maurice, Sébastien Lalléchère, and Fayu Wan. "Kron-Branin modeling of symmetric star tree interconnect." International Journal of Circuit Theory and Applications 47, no. 3 (October 15, 2018): 391–405. http://dx.doi.org/10.1002/cta.2575.
Повний текст джерелаLi, Bing-Jie, Zhen-Song Li, Yan-Ping Zhao, Zheng-Wang Li, and Min Miao. "Modeling and Optimization Design of Signal Interconnect Channel Considering Signal Integrity in Three Dimensional Integrated Circuits." Journal of Nanoelectronics and Optoelectronics 16, no. 5 (May 1, 2021): 773–80. http://dx.doi.org/10.1166/jno.2021.2999.
Повний текст джерелаAl-Daloo, Mohammed, Ahmed Soltan, and Alex Yakovlev. "Advance Interconnect Circuit Modeling Design Using Fractional-Order Elements." IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems 39, no. 10 (October 2020): 2722–34. http://dx.doi.org/10.1109/tcad.2019.2962779.
Повний текст джерелаTravaly, Y., M. Bamal, L. Carbonell, F. Iacopi, M. Stucchi, M. Van Hove, and G. P. Beyer. "A novel approach to resistivity and interconnect modeling." Microelectronic Engineering 83, no. 11-12 (November 2006): 2417–21. http://dx.doi.org/10.1016/j.mee.2006.10.048.
Повний текст джерелаFasig, Jonathan, Gregory Rash, Barbara Randall, Karl Fritz, Steven Currie, Bart McCoy, Paul Riemer, Wendy Wilkins, Barry Gilbert, and Erik Daniel. "Interconnect Analysis for 80-Gbps Serial Link Design." Journal of Microelectronics and Electronic Packaging 5, no. 3 (July 1, 2008): 135–39. http://dx.doi.org/10.4071/1551-4897-5.3.135.
Повний текст джерелаMi, Ning, Sheldon X. D. Tan, and Boyuan Yan. "Multiple block structure-preserving reduced order modeling of interconnect circuits." Integration 42, no. 2 (February 2009): 158–68. http://dx.doi.org/10.1016/j.vlsi.2008.04.006.
Повний текст джерелаIoan, D., G. Ciuprina, M. Radulescu, and E. Seebacher. "Compact modeling and fast simulation of on-chip interconnect lines." IEEE Transactions on Magnetics 42, no. 4 (April 2006): 547–50. http://dx.doi.org/10.1109/tmag.2006.871466.
Повний текст джерелаXuejue Huang, P. Restle, T. Bucelot, Yu Cao, Tsu-Jae King, and Chenming Hu. "Loop-based interconnect modeling and optimization approach for multigigahertz clock network design." IEEE Journal of Solid-State Circuits 38, no. 3 (March 2003): 457–63. http://dx.doi.org/10.1109/jssc.2002.808313.
Повний текст джерелаMa, J. D., and R. A. Rutenbar. "Fast interval-valued statistical modeling of interconnect and effective capacitance." IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems 25, no. 4 (April 2006): 710–24. http://dx.doi.org/10.1109/tcad.2006.870067.
Повний текст джерелаJiang, Lijun, Chuan Xu, Barry J. Rubin, Alan J. Weger, Alina Deutsch, Howard Smith, Alain Caron, and Kaustav Banerjee. "A Thermal Simulation Process Based on Electrical Modeling for Complex Interconnect, Packaging, and 3DI Structures." IEEE Transactions on Advanced Packaging 33, no. 4 (November 2010): 777–86. http://dx.doi.org/10.1109/tadvp.2010.2090348.
Повний текст джерелаChang, R., Y. Cao, and C. J. Spanos. "Modeling the Electrical Effects of Metal Dishing Due to CMP for On-Chip Interconnect Optimization." IEEE Transactions on Electron Devices 51, no. 10 (October 2004): 1577–83. http://dx.doi.org/10.1109/ted.2004.834898.
Повний текст джерелаXia, Lei, Jicheng Meng, Ruimin Xu, Bo Yan, and Yunchuan Guo. "Modeling of 3-D Vertical Interconnect Using Support Vector Machine Regression." IEEE Microwave and Wireless Components Letters 16, no. 12 (December 2006): 639–41. http://dx.doi.org/10.1109/lmwc.2006.885585.
Повний текст джерелаMurugavel, A. K., and N. Ranganathan. "Petri net modeling of gate and interconnect delays for power estimation." IEEE Transactions on Very Large Scale Integration (VLSI) Systems 11, no. 5 (October 2003): 921–27. http://dx.doi.org/10.1109/tvlsi.2003.817110.
Повний текст джерелаDemeester, Thomas, and Daniël De Zutter. "Fields at a Finite Conducting Wedge and Applications in Interconnect Modeling." IEEE Transactions on Microwave Theory and Techniques 58, no. 8 (August 2010): 2158–65. http://dx.doi.org/10.1109/tmtt.2010.2053061.
Повний текст джерелаTANJI, Y. "Sparse and Passive Reduced-Order Interconnect Modeling by Eigenspace Method." IEICE Transactions on Fundamentals of Electronics, Communications and Computer Sciences E91-A, no. 9 (September 1, 2008): 2419–25. http://dx.doi.org/10.1093/ietfec/e91-a.9.2419.
Повний текст джерелаZhao, Wei, Xia Li, Sam Gu, Seung H. Kang, Matthew M. Nowak, and Yu Cao. "Field-Based Capacitance Modeling for Sub-65-nm On-Chip Interconnect." IEEE Transactions on Electron Devices 56, no. 9 (September 2009): 1862–72. http://dx.doi.org/10.1109/ted.2009.2026162.
Повний текст джерелаTSENG, W., C. N. J. LIU, and C. SU. "Passive Reduced-Order Macro-Modeling for Linear Time-Delay Interconnect Systems." IEICE Transactions on Electronics E89-C, no. 11 (November 1, 2006): 1713–18. http://dx.doi.org/10.1093/ietele/e89-c.11.1713.
Повний текст джерелаJain, Neeraj, A. K. Aggarwal, and P. K. Chaudhary. "Carbon Nanotubes: Good Candidate for VLSI Interconnects." Applied Mechanics and Materials 378 (August 2013): 165–71. http://dx.doi.org/10.4028/www.scientific.net/amm.378.165.
Повний текст джерелаElfadel, I. M., A. Deutsch, H. H. Smith, B. J. Rubin, and G. V. Kopcsay. "A Multiconductor Transmission Line Methodology for Global On-Chip Interconnect Modeling and Analysis." IEEE Transactions on Advanced Packaging 27, no. 1 (February 2004): 71–78. http://dx.doi.org/10.1109/tadvp.2004.825478.
Повний текст джерелаYan, Zhaowen, Ting Kang, Wei Zhang, and Jianwei Wang. "Modeling and Electromagnetic Analysis of Multilayer Through Silicon Via Interconnect for 3D Integration." International Journal of Antennas and Propagation 2015 (2015): 1–14. http://dx.doi.org/10.1155/2015/470952.
Повний текст джерелаALAM, MEHBOOB, ARTHUR NIEUWOUDT, and YEHIA MASSOUD. "EFFICIENT MULTI-SHIFTED ARNOLDI PROJECTION USING WAVELET TRANSFORM." Journal of Circuits, Systems and Computers 16, no. 05 (October 2007): 699–709. http://dx.doi.org/10.1142/s0218126607003927.
Повний текст джерелаDaugherty, Robin, and Dragica Vasileska. "Multi-Scale Modeling of Self Heating Effects on Power Consumption in Silicon CMOS Devices." Additional Conferences (Device Packaging, HiTEC, HiTEN, and CICMT) 2017, DPC (January 1, 2017): 1–22. http://dx.doi.org/10.4071/2017dpc-tp3_presentation4.
Повний текст джерелаBhopte, Siddharth, Jesse Galloway, Kyung-Rok Park, Hyun-Jin Park, Jeong-Han Choi, Ho-Beob Yu, and Sung-Hwan Yang. "Thermal modeling approach for enhancing TCNCP process for manufacturing fine pitch copper pillar flip chip packages." Additional Conferences (Device Packaging, HiTEC, HiTEN, and CICMT) 2013, DPC (January 1, 2013): 000441–54. http://dx.doi.org/10.4071/2013dpc-ta22.
Повний текст джерелаQinwei Xu and P. Mazumder. "Equivalent-circuit interconnect modeling based on the fifth-order differential quadrature methods." IEEE Transactions on Very Large Scale Integration (VLSI) Systems 11, no. 6 (December 2003): 1068–79. http://dx.doi.org/10.1109/tvlsi.2003.817522.
Повний текст джерелаBuratynski, E. K. "Thermomechanical Modeling of Direct Chip Interconnection Assembly." Journal of Electronic Packaging 115, no. 4 (December 1, 1993): 382–91. http://dx.doi.org/10.1115/1.2909347.
Повний текст джерелаYu-Lin Shen. "On the Elastic Assumption for Copper Lines in Interconnect Stress Modeling." IEEE Transactions on Device and Materials Reliability 8, no. 3 (September 2008): 600–607. http://dx.doi.org/10.1109/tdmr.2008.2002360.
Повний текст джерелаTan, Sheldon, Zeyu Sun, and Sheriff Sadiqbatcha. "Interconnect Electromigration Modeling and Analysis for Nanometer ICs: From Physics to Full-Chip." IPSJ Transactions on System LSI Design Methodology 13 (2020): 42–55. http://dx.doi.org/10.2197/ipsjtsldm.13.42.
Повний текст джерелаKacker, K., and S. K. Sitaraman. "Electrical/Mechanical Modeling, Reliability Assessment, and Fabrication of FlexConnects: A MEMS-Based Compliant Chip-to-Substrate Interconnect." Journal of Microelectromechanical Systems 18, no. 2 (April 2009): 322–31. http://dx.doi.org/10.1109/jmems.2008.2011117.
Повний текст джерелаBai, X., R. Chandra, S. Dey, and P. V. Srinivas. "Interconnect Coupling-Aware Driver Modeling in Static Noise Analysis for Nanometer Circuits." IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems 23, no. 8 (August 2004): 1256–63. http://dx.doi.org/10.1109/tcad.2004.831568.
Повний текст джерелаHUANG, Z. "Modeling the Effective Capacitance of Interconnect Loads for Predicting CMOS Gate Slew." IEICE Transactions on Fundamentals of Electronics, Communications and Computer Sciences E88-A, no. 12 (December 1, 2005): 3367–74. http://dx.doi.org/10.1093/ietfec/e88-a.12.3367.
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