Дисертації з теми "Ecological Applications not elsewhere classified"
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Lin, Xin-Yu. "Lossless image compression for aerospace non-destructive testing applications." Thesis, University of Central Lancashire, 2004. http://clok.uclan.ac.uk/18830/.
Повний текст джерелаPetra, Mohamad Iskandar. "Novel hardwired distributive tactile sensing system for medical applications." Thesis, Aston University, 2007. http://publications.aston.ac.uk/12240/.
Повний текст джерелаTam, B. K. Y. "A novel actuated digit with tactile feedback for clinical applications." Thesis, Aston University, 2006. http://publications.aston.ac.uk/12247/.
Повний текст джерелаMaclennan, Ruth. "From the White Sea to the North Sea : journeys in film, writing and ecological thought." Thesis, Royal College of Art, 2017. http://researchonline.rca.ac.uk/2721/.
Повний текст джерела(9808472), Maryanne Jones. "Assessing the risk from chemical contaminants in the Port Curtis Estuary, Australia." Thesis, 2002. https://figshare.com/articles/thesis/Assessing_the_risk_from_chemical_contaminants_in_the_Port_Curtis_Estuary_Australia/13429325.
Повний текст джерела(10716507), Alexis Margaret Corda. "Advancements of a Silicon-on-Insulator Thermoelectric Sensor for Biomedical Applications." Thesis, 2021.
Знайти повний текст джерела(5929850), Shengyu Jin. "LASER SHOCK IMPRINTING OF METALLIC MEMBRANES TOWARD SOFT TEMPLATES AND ITS APPLICATIONS." Thesis, 2020.
Знайти повний текст джерелаLaser shock imprinting (LSI) is a novel fabrication technique capable of manufacturing various membrane materials. This top-down imprinting process can fabricate membranes in high precision, high throughput, and large scalability. It reveals a variety of applications ranging from electronics to photonics, which is beneficial from its reliable and precise modulation of micro/nanostructures.
In this thesis, we firstly proposed and developed a cost-effective LSI process to manufacture hierarchical micro/nanostructured power generators. By combining the conventional soft lithography technique, LSI is well compatible with it to fabricate metal membranes towards soft templates. It is a significant progress from the originally-developed silicon wafer template layout because it effectively reduces the process cost by replacing sophisticatedly developed silicon wafers with low-cost photocurable polymers. In addition, the use of polymer expands the boundary limit of geometrical complexity from simple patterns to hierarchical structures, as a result, we successfully conducted LSI technology to fabricate biomimic leaf structures into metallic membranes with the help of soft SU-8 templates. These fabricated metallic membraned are used as water-driven triboelectric nanogenerators. In addition to the introduction of polymer template, we further developed a successive laser shock imprinting (SLSI) process to fabricate hierarchical nanostructures in a higher resolution. Typically, grating templates are collected via recycling blank discs and used as soft templates. Then multiple times of LSI process are conducted to manufacture membranes into complex nanostructures. The use of blank disc further reduces cost and increase process resolution. The highlight of this part of work is to feature the introduction of metallic thin films on disc template, which plays a significant role during this high strain rate imprinting process. Then, the imprinting mechanism was investigated through the finite element method to validate the experimental findings. Lastly, this soft template LSI process was applied to fabricate low dimensional materials such as nanowires (1D) and nanomembranes (2D), potentially introducing homogeneous and inhomogeneous strain field. Kelvin probe force microscopy was used to directly probe strain-induced changes. This soft-template LSI process reveals a new route of precisely fabricating low dimensional membranes into nanoelectronics systems.
(8098292), Evan L. Witkoske. "First-Principles Informed Analysis of Thermoelectric Materials for Applications." Thesis, 2019.
Знайти повний текст джерела(5929577), Christopher J. Cheng. "Novel Applications for Zein Nanoparticles." Thesis, 2018.
Знайти повний текст джерела(7027802), Scott A. McClary. "Synthesis and Characterization of Copper Arsenic Sulfide for Photovoltaic Applications." Thesis, 2019.
Знайти повний текст джерела(5930450), Landon G. Young. "Innovation as an Adaptive Management Strategy in Social-Ecological Systems." Thesis, 2020.
Знайти повний текст джерелаInnovation is promoted as a means to address global environmental challenges and achieve resilience in the UN Sustainable Development Goals. Innovation allows for adaptation and transformation in socio-ecological systems as part of the adaptive cycle. Within resilience literature, there are myriad definitions of innovation and disagreement about how to motivate diffusion of innovation, making implementation and the sustainability of innovations difficult. Specifically, matching the correct innovation to a given challenge and motivating the adoption of the innovation remains a roadblock to using innovation to address global environmental change. Here we show that there are explicit conflicts among definitions of innovation, and that innovation in the field does not align with some of these definitions. We found that the diverse definitions of innovation show a more complex view of innovation than normative treatment in policy suggests. We also found that several interacting motivations affect long-term participation in certain innovation activities. We discovered that binary views of innovation as either incremental or radical are generally supported in examples of innovation in the field, although some of the most successful examples of innovation better aligned with a continuum view of innovation associated with the adaptive cycle. Our results add to the warm-glow hypothesis that for altruistic tasks, the degree of participation motivated by a warm-glow feeling which can be enhanced by other motivations. Contrary to crowding out theory, our results suggest that monetary incentives result in higher adoption in Malawi where cost of contributing is high. The findings demonstrate the complexity of innovation, the misalignment between policy and practice, and ways in which adoption might be optimized. This research is a starting point to inform discussion about pragmatic innovation typologies. Such a typology could help operationalize the SDGs by framing the innovation dialogue between policy and practice.
(9371222), Matias Kalaswad. "Integration of oxide-metal and nitride-metal vertically aligned nanocomposites on silicon toward device applications." Thesis, 2021.
Знайти повний текст джерелаDevices that can process more information in reduced dimensions are essential for an increasingly information- and efficiency-driven future. To this end, nanocomposites are promising due to their inherent multifunctional properties and special behavior at the nanoscale. Vertically aligned nanocomposites (VANs) are particularly interesting because of their ability to self-assemble into anisotropic nanostructures and high density of heterointerfaces – characteristics which introduce unique functionalities and offer exciting new avenues for device applications. However, a vast majority of VAN systems are currently fabricated on single-crystal oxide substrates, which may be cost-prohibitive at large scales and are generally incompatible with the prevalent device fabrication techniques. Thus, integration of VAN thin films on silicon becomes a critical step toward implementing VANs in a well-established semiconductor manufacturing industry.
In this dissertation, the viability of oxide-metal and nitride-metal VAN thin films integrated on silicon substrates has been demonstrated through a set of unique buffer layer designs. For the first three systems presented in this dissertation, namely, LaSrFeO4-Fe, BaTiO3-Au, and BaTiO3-Fe, microstructural and physical property (i.e. electrical, magnetic, and optical) analyses confirm their successful epitaxial growth on silicon, with only minor differences compared to their counterparts grown on single-crystal oxide substrates. For the fourth system, a new and robust TiN-Fe VAN has been proposed and demonstrated. The new TiN-Fe VAN system on Si exhibits superior magnetic properties and unusual optical properties. With further growth optimization and/or patterning techniques, VAN thin film integration on silicon presents itself as a feasible and cost-effective approach to designing electronic, spintronic, photonic, and sensing devices.
(8735115), He Liu. "Video Processing for Agricultural Applications." Thesis, 2020.
Знайти повний текст джерела(9805715), Zhigang Huang. "A recursive algorithm for reliability assessment in water distribution networks with applications of parallel programming techniques." Thesis, 1994. https://figshare.com/articles/thesis/A_recursive_algorithm_for_reliability_assessment_in_water_distribution_networks_with_applications_of_parallel_programming_techniques/13425371.
Повний текст джерелаZito, Rocco. "The integration of GPS and GIS in transportation applications." 2002. http://arrow.unisa.edu.au:8081/1959.8/45754.
Повний текст джерела(5930171), Yuxiao Qin. "Sentinel-1 Wide Swath Interferometry: Processing Techniques and Applications." Thesis, 2019.
Знайти повний текст джерела(8718126), Duo Cao. "Efficient and accurate numerical methods for two classes of PDEs with applications to quasicrystals." Thesis, 2020.
Знайти повний текст джерелаIn second part, we propose a method suitable for the computation of quasiperiodic interface, and apply it to simulate the interface between ordered phases in Lifschitz-Petrich model, which can be quasiperiodic. The function space, initial and boundary conditions are carefully chosen such that it fix the relative orientation and displacement, and we follow a gradient flow to let the interface and its optimal structure. The gradient flow is discretized by the scalar auxiliary variable (SAV) approach in time, and spectral method in space using quasiperiodic Fourier series and generalized Jacobi
polynomials. We use the method to study interface between striped, hexagonal and dodecagonal phases, especially when the interface is quasiperiodic. The numerical examples show that our method is efficient and accurate to successfully capture the interfacial structure.
(5930435), Wei Yang. "Tunable Absorptive Bandstop-to-All-Pass Filter Synthesis, Control, Applications, and Optimizations." Thesis, 2019.
Знайти повний текст джерела(9827189), Kim Polistina. "Minions, mates and linchpins: A qualitative examination of the local social-ecological context of neoliberalist bullying impacting on sustainability domains and responses through community sustainability frameworks." Thesis, 2019. https://figshare.com/articles/thesis/Minions_mates_and_linchpins_A_qualitative_examination_of_the_local_social-ecological_context_of_neoliberalist_bullying_impacting_on_sustainability_domains_and_responses_through_community_sustainability_frameworks/13447520.
Повний текст джерела(5929841), Hongjie Jiang. "Laser-Assisted Micromachining of Hydrogel Films for Biomedical Applications." Thesis, 2019.
Знайти повний текст джерела(10725729), Ruiping Zhou. "TRANSPORT PROPERTIES OF LOW DIMENSIONAL MATERIALS AND THEIR APPLICATIONS TOWARD HIGH PERFORMANCE FETS." Thesis, 2021.
Знайти повний текст джерелаThe miniaturization of a MOSFET is the constant driving force in semiconductor technology over the decades. This scaling enables the realization of the ever complex and functional integration on a single chip where over tens of billions of transistors densely packed. Silicon (Si) is always the golden performer until recent years when the shrinking of a transistor becomes more and more difficult, due to phenomena such as short channel effect and mobility degradation, which is a challenge especially for atomic level scaling. The dawning of low dimensional materials, such as graphene, transition metal dichalcogenides (TMDs), black phosphorus (BP), with their natural atomically thin two-dimension (2D) layered structure and other novel properties, might serve as an alternative solution for ultimate scaling. However, the understanding of the electronic transport in these Van der Waals materials is still lacking.
In this research, the exploration of this material was first initiated on the vertical heterojunctions where two materials’ interfaces meet. Many previous literatures claimed this hetero-interface creates a P/N junction that results in a diode-like rectification. Yet, by careful analysis and comparing with our “real” vertical structures where the lateral components were eliminated, it is proved this rectification is a direct result from the contact region. The Schottky barrier on the drain side together with the gate effect is the true culprit.
Realizing how the Schottky barrier could be dominating in these 2D FETs, the second study is the Schottky barrier effect on the contact resistances and furthermore the mobility of the device. Because of the existence of the Schottky barrier between the channel and contact, the contact resistance is not negligible, unlike the ohmic contact for conventional Si MOSFETs. By comparing the intrinsic and extrinsic mobilities of TMD materials, It is found that the contact resistance’s response to the back gate, namely, the rate of how it changes with the back gate has a huge factor in determining whether the extrinsic field-effect mobility underestimates or overestimates its intrinsic mobility. This opens a new insight on the understanding of the transport mechanism under contacts for different TMDs.
With the understanding of the Schottky barrier FETs, lastly, the flexibility of these 2D materials is utilized to create high performance three-dimensionally stacked multi-channel FETs, from the inspiration of the Si gate-all-around nanosheet structure. A first-ever 3D integrated high performance MoS2 device with two channels on top of each other was designed and fabricated, where the current is doubled with an extra layer of channel. The potential of these novel material to be implemented on the future generations of high-performance devices is demonstrated, shedding light on the prospect for extending the Moore’s Law with proper assistance from new materials.(11209926), Atanu Kumar Saha. "Modeling and Applications of Ferroelectric Based Devices." Thesis, 2021.
Знайти повний текст джерелаTo sustain the upcoming paradigm shift in computations technology efficiently, innovative solutions at the lowest level of the computing hierarchy (the material and device level) are essential to delivering the required functionalities beyond what is available with current CMOS platforms. Motivated by this, in this dissertation, we explore ferroelectric-based devices for steep-slope logic and energy-efficient non-volatile-memory functionalities signifying the novel device attributes, possibilities for continual dimensional scaling with the much-needed enhancement in performance.
Among various ferroelectric (FE) materials, Zr doped HfO2 (HZO) has gained immense research attention in recent times by virtue of CMOS process compatibility and a considerable amount of ferroelectricity at room temperature. In this work, we investigate the Zr concentration-dependent crystal phase transition of Hf1-xZxO2 (HZO) and the corresponding evolution of dielectric, ferroelectric, and anti-ferroelectric characteristics. Providing the microscopic insights of strain-induced crystal phase transformations, we propose a physics-based model that shows good agreement with experimental results for 10 nm Hf1-xZxO2. Further, in a heterogeneous system, ferroelectric materials can exhibit negative capacitance (NC) behavior. Such NC effects may lead to differential amplification in local potential and can provide an enhanced charge and capacitance response for the whole system compared to their constituents. Such intriguing implications of NC phenomena have prompted the design and exploration of many ferroelectric-based electronic devices to not only achieve an improved performance but potentially also overcome some fundamental limits of standard transistors. However, the microscopic physical origin as well as the true nature of the NC effect, and direct experimental evidence remain elusive and debatable. To that end, in this work, we systematically investigate the underlying physical mechanism of the NC effect in the ferroelectric material. Based upon the fundamental physics of ferroelectric material, we investigate different assumptions, conditions, and distinct features of the quasi-static NC effect in the single-domain and multi-domain scenarios. While the quasi-static and hysteresis-free NC effect was initially propounded in the context of a single-domain scenario, we highlight that the similar effects can be observed in multi-domain FEs with soft domain-wall (DW) displacement. Furthermore, to obtain the soft-DW, the gradient energy coefficient of the FE material is required to be higher as well as the ferroelectric thickness is required to be lower than some critical values. Otherwise, the DW becomes hard, and their displacement would lead to hysteretic NC effects. In addition to the quasi-static NC, we discuss different mechanisms that can lead to the transient NC effects. Furthermore, we provide guidelines for new experiments that can potentially provide new insights on unveiling the real origin of NC phenomena.
Utilizing such ferroelectric insulators at the gate stack of a transistor, ferroelectric-field-effect transistors (FeFETs) have been demonstrated to exhibit both non-volatile memory and steep-slope logic functionalities. To investigate such diverse attributes and to enable application drive optimization of FeFETs, we develop a phase-field simulation framework of FeFETs by self-consistently solving the time-dependent Ginzburg-Landau (TDGL) equation, Poisson’s equation, and non-equilibrium Green’s function (NEGF) based semiconductor charge-transport equation. Considering HZO as the FE layer, we first analyze the dependence of the multi-domain patterns on the HZO thickness (TFE) and their critical role in dictating the steep-switching (both in the negative and positive capacitance regimes) and non-volatile characteristics of FeFETs. In particular, we analyze the TFE-dependent formation of hard and soft domain-walls (DW). We show that, TFE scaling first leads to an increase in the domain density in the hard DW-regime, followed by soft DW formation and finally polarization collapse. For hard-DWs, we describe the polarization switching mechanisms and how the domain density impacts key parameters such as coercive voltage, remanent polarization, effective permittivity and memory window. We also discuss the enhanced but positive permittivity effects in densely pattern multi-domain states in the absence of hard-DW displacement and its implication in non-hysteretic attributes of FeFETs. For soft-DWs, we present how DW-displacement can lead to effective negative capacitance in FeFETs, resulting in a steeper switching slope and superior scalability. In addition, we also develop a Preisach based circuit compatible model for FeFET (and antiferroelectric-FET) that captures the multi-domain polarization switching effects in the FE layer.
Unlike semiconductor insulators (e.g., HZO), there are ferroelectric materials that exhibit a considerably low bandgap (< 2eV) and hence, display semiconducting properties. In this regard, non-perovskite-based 2D ferroelectric -In2Se3 shows a bandgap of ~1.4eV and that suggests a combined ferroelectricity and semiconductivity in the same material system. As part of this work, we explore the modeling and operational principle of ferroelectric semiconductor metal junction (FeSMJ) based devices in the context of non-volatile memory (NVM) application. First, we analyze the semiconducting and ferroelectric properties of the α-In2Se3 van der Waals (vdW) stack via experimental characterization and first-principles simulations. Then, we develop a FeSMJ device simulation framework by self-consistently solving the Landau–Ginzburg–Devonshire equation, Poisson's equation, and charge-transport equations. Our simulation results show good agreement with the experimental characteristics of α-In2Se3-based FeSMJ suggesting that the FeS polarization-dependent modulation of Schottky barrier heights of FeSMJ plays a key role in providing the NVM functionality. Moreover, we show that the thickness scaling of FeS leads to a reduction in read/write voltage and an increase in distinguishability. Array-level analysis of FeSMJ NVM suggests a lower read-time and read-write energy with respect to the HfO2-based ferroelectric insulator tunnel junction (FTJ) signifying its potential for energy-efficient and high-density NVM applications.
(5929994), Xing Liu. "Feature Extraction and Image Analysis with the Applications to Print Quality Assessment, Streak Detection, and Pedestrian Detection." Thesis, 2019.
Знайти повний текст джерела(9179663), Chase O. Mathison. "Microlocal Analysis and Applications to Medical Imaging." Thesis, 2020.
Знайти повний текст джерела(6624245), Angel A. Pena. "Evaluation of Rare-Earth Element Dopants (Sm and Er) Effect on the Ablation Resistance and Emittance Tailoring of ZrB2/SiC Sintered Billets." Thesis, 2019.
Знайти повний текст джерелаHypersonic flight causes ultra-high surface temperatures which are most intense on sharp leading edges. One way of reducing the surface temperature is to apply a high emittance ceramic (HEC) on the leading edge, increasing the radiation component of heat transfer. An ideal HEC must have a high emittance, while also possessing a strong ablation resistance. From a scientific standpoint, it would be helpful if emittance could be tailored at different wavelengths. For example, materials with tailorable emittance could be used to improve the efficiency of engines, thermo-photo voltaic cells, and other applications. The approach used to create a ceramic with tailorable emittance was to use two different rare-earth elements, adding them to an ultra-high temperature ceramic (UHTC) in small quantities. The samarium element was added to increase the emittance of the UHTC over a large wavelength range (visible to near infrared wavelengths, consistent with the temperature range expected for hypersonic flight), and the erbium element was added to decrease the emittance at specific wavelength ranges. The goal of this study was to create an UHTC with tailorable emittance while maintaining the required ablation resistance. Therefore, ZBS billets with five different Sm to Er ratios and with a nominal total amount of 3 mol.% dopant incorporated were prepared by sintering in vacuum to 2000 °C. The ablation resistance was evaluated by using an oxyacetylene torch and observing at exposure times of 60 s and 300 s, whereas the emittance was evaluated at the Air Force Research Lab facilities via a laser heating testing. The results for the ablation testing showed that ZrB2-SiC (ZBS) billets co-doped with Sm and Er formed a beneficial c1-(Sm/Er)0.2Zr0.8O1.9 oxide scale as the majority phase, which is more thermally stable than the m-ZrO2 oxide scale typically formed in oxidized ZBS systems, resulting in a more adherent oxide scale to the unreacted material. The crystalline oxide scale and the amorphous phase were formed by a convection cell mechanism where the c1-(Sm/Er)0.2Zr0.8O1.9 crystalline islands precipitate, grow, and coalesce. Moreover, differences in surface temperatures between ZBS samples with different dopant ratios suggest differences in spectral absorptance/emittance between each of the five compositions evaluated. Despite that the emittance profiles with varying Sm:Er molar ratios were similar because m-ZrO2 was formed as the major oxide phase, the emittance study showed that the erbium oxide influences the emittance profile, as can be noted by the maximum and minimum emittance peaks. Furthermore, results showed that the emittance varies as a function of dopant(s) molar ratios and temperature at shorter wavelength ranges. These changes in the emittance are caused by the different Sm and Er concentration on the surface. Future work should be focused on producing the beneficial c1-(Sm/Er)0.2Zr0.9O1.8 phase directly from the manufacturing process, and therefore, maximize the effect of varying the Sm:Er molar ratios to tailor the emittance. Nonetheless, this study represents the first generation and reported emittance data of UHTC doping ZBS systems with both Sm and Er elements.
(9857864), Ziyi Zhao. "THREE PROBLEMS IN DIGITAL IMAGE PROCESSING: ALIGNMENT OF DATA-BEARING HALFTONE IMAGES, SURFACE CODING, AND MATCHING CONSUMER PHOTOS OF FASHION ITEMS WITH ON-LINE IMAGES." Thesis, 2020.
Знайти повний текст джерелаDigital image processing techniques have many significant applications in industry. In this thesis, we focus on three problems in digital image processing. These three problems involve halftone images, information encoding and decoding, image alignment, and deep learning.
Specifically, the first problem is based on data-bearing halftone images, which are an aesthetically pleasing alternative to barcodes. We address the issues generated in the camera captured image alignment process. We perform some theoretical analysis and validate it by simulation. We also provide an optimal solution to the problem.
The second problem is about the alignment technique on a 3D surface. We develop a pipeline of surfaces coding to solve the alignment issues on 3D surfaces, which includes oblique surfaces and cylindrical surfaces.
The third problem is related to image retrieval. We propose a deep learning based solution to the fashion image retrieval task. Fashion image retrieval is significant to improve the customers’ experience in online shopping. A fast, accurate shopping item information retrieval system based on the customers’ uploaded image has been built by us. A novel solution is provided, and it achieves state-of-art accuracy in shopping items’ information retrieval.
(10195706), Shreeya Sriram. "Electro - Quasistatic Body Communication for Biopotential Applications." Thesis, 2021.
Знайти повний текст джерела
The current state of the art in biopotential recordings rely on radiative electromagnetic (EM) fields. In such transmissions, only a small fraction of this energy is received since the EM fields are widely radiated resulting in lossy inefficient systems. Using the body as a communication medium (similar to a ’wire’) allows for the containment of the energy within the body, yielding order(s) of magnitude lower energy than radiative EM communication. The first part of this work introduces Animal Body Communication for untethered rodent biopotential recording and for the first time this work develops the theory and models for animal body communication circuitry and channel loss. In vivo experimental analysis proves that ABC successfully transmits acquired electrocardiogram (EKG) signals through the body with correlation greater than 99% when compared to traditional wireless communication modalities, with a 50x reduction in power consumption. The second part of this work focusses on the analysis and design of an Electro-Quasistatic Human Body Communication (EQS-HBC) system for simultaneous sensing and transmission of biopotential signals. In this work, detailed analysis on the system level interaction between the sensing and transmitting circuitry is studied and a design to enable simultaneous sensing and transmission is proposed. Experimental analysis was performed to understand the interaction between the Right Leg-Drive circuitry and the HBC transmission along with the effect of the ADC quantization on signal quality. Finally, experimental trials proves that EKG signals can be transmitted through the body with greater than 96% correlation when compared to Bluetooth systems at extremely low powers.
(8811866), Mei-Chin Chen. "SPINTRONIC DEVICES AND ITS APPLICATIONS." Thesis, 2020.
Знайти повний текст джерелаProcess variations and increasing leakage current are major challenges toward memory realization in deeply-scaled CMOS devices. Spintronic devices recently emerged as one of the leading candidates for future information storage due to its potential for non-volatility, high speed, low power and good endurance. In this thesis, we start with the basic concepts and applications of three spintronic devices, namely spin or- bit torque (SOT) based spin-valves, SOT-based magnetic tunnel junctions and the magnetic skyrmion (MS) for both logic and machine learning hardware.
We propose a new Spin-Orbit Torque based Domino-style Spin Logic (SOT-DSL) that operates in a sequence of Preset and Evaluation modes of operations. During the preset mode, the output magnet is clocked to its hard-axis using spin Hall effect. In the evaluation mode, the clocked output magnet is switched by a spin current from the preceding stage. The nano-magnets in SOT-DSL are always driven by orthogonal spins rather than collinear spins, which in turn eliminates the incubation delay and allows fast magnetization switching. Based on our simulation results, SOT-DSL shows up to 50% improvement in energy consumption compared to All-Spin Logic. Moreover, SOT-DSL relaxes the requirement for buffer insertion between long spin channels, and significantly lowers the design complexity. This dissertation also covers two applications using MS as information carriers. MS has been shown to possess several advantages in terms of unprecedented stability, ultra-low depinning current density, and compact size.
We propose a multi-bit MS cell with appropriate peripheral circuits. A systematic device-circuit-architecture co-design is performed to evaluate the feasibility of using MS-based memory as last-level caches for general purpose processors. To further establish the viability of skyrmions for other applications, a deep spiking neural network (SNN) architecture where computation units are realized by MS-based devices is also proposed. We develop device architectures and models suitable for neurons and synapses, provide device-to-system level analysis for the design of an All-Spin Spiking Neural Network based on skyrmionic devices, and demonstrate its efficiency over a corresponding CMOS implementation.
Apart from the aforementioned applications such as memory storage elements or logic operation, this research also focuses on the implementation of spin-based device to solve combinatorial optimization problems. Finding an efficient computing method to solve these problems has been researched extensively. The computational cost for such optimization problems exponentially increases with the number of variables using traditional von-Neumann architecture. Ising model, on the other hand, has been proposed as a more suitable computation paradigm for its simple architecture and inherent ability to efficiently solve combinatorial optimization problems. In this work, SHE-MTJs are used as a stochastic switching bit to solve these problems based on the Ising model. We also design an unique approach to map bi-prime factorization problem to our proposed device-circuit configuration. By solving coupled Landau- Lifshitz-Gilbert equations, we demonstrate that our coupling network can factorize up to 16-bit binary numbers.
(10716282), Xiaozhe Fan. "EXPLOITING LUMINESCENCE EMISSIONS OF SOLAR CELLS FOR INTERNET-OF-THINGS (IOT) APPLICATIONS." Thesis, 2021.
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