Статті в журналах з теми "Dual layer LCD"
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Albani, Luigi. "Image-splitting techniques for a dual-layer high dynamic range LCD display." Journal of Electronic Imaging 17, no. 4 (October 1, 2008): 043009. http://dx.doi.org/10.1117/1.3010884.
Повний текст джерелаBadano, Aldo, Hongye Liang, and Luigi Albani. "P-244L: Late-News Poster: Noise and Resolution in a Dual-Layer LCD." SID Symposium Digest of Technical Papers 39, no. 1 (2008): 1537. http://dx.doi.org/10.1889/1.3069451.
Повний текст джерелаGuarnieri, Gabriele, Luigi Albani, and Giovanni Ramponi. "Minimum-Error Splitting Algorithm for a Dual Layer LCD Display—Part I: Background and Theory." Journal of Display Technology 4, no. 4 (December 2008): 383–90. http://dx.doi.org/10.1109/jdt.2008.2001159.
Повний текст джерелаGuarnieri, Gabriele, Luigi Albani, and Giovanni Ramponi. "Minimum-Error Splitting Algorithm for a Dual Layer LCD Display—Part II: Implementation and Results." Journal of Display Technology 4, no. 4 (December 2008): 391–97. http://dx.doi.org/10.1109/jdt.2008.2001748.
Повний текст джерелаWang, Peng, Xinzhu Sang, Duo Chen, and Binbin Yan. "Computational Super-Resolution Full-Parallax Three-Dimensional Light Field Display Based on Dual-Layer LCD Modulation." IEEE Access 8 (2020): 81045–54. http://dx.doi.org/10.1109/access.2020.2989677.
Повний текст джерелаBadan, Aldo, Gabriele Guarnieri, Giovanni Ramponi, and Luigi Albani. "61.4: Quantization in Medical Imaging Displays — Initial Observer Results for a High-Luminance-Range, Dual-Layer LCD." SID Symposium Digest of Technical Papers 40, no. 1 (2009): 923. http://dx.doi.org/10.1889/1.3256948.
Повний текст джерелаFeng Qibin, 冯奇斌, 苏凯 Su Kai, 王梓 Wang Zi та 吕国强 Lü Guoqiang. "基于视角补偿的双层液晶显示图像分割算法研究". Acta Optica Sinica 41, № 10 (2021): 1005001. http://dx.doi.org/10.3788/aos202141.1005001.
Повний текст джерелаMingru, Chen, Guo Xu, Zhang Zehan, and Zhou Lyu. "Study on sustainable defluoridization approaches for rural drinking water treatment in northern China." IOP Conference Series: Earth and Environmental Science 1074, no. 1 (August 1, 2022): 012002. http://dx.doi.org/10.1088/1755-1315/1074/1/012002.
Повний текст джерелаLin, Qi, Yi Li, Ming Xu, Qu Cheng, Hang Qian, Jinlong Feng, Hao Tong, and Xiangshui Miao. "Dual-Layer Selector With Excellent Performance for Cross-Point Memory Applications." IEEE Electron Device Letters 39, no. 4 (April 2018): 496–99. http://dx.doi.org/10.1109/led.2018.2808465.
Повний текст джерелаLwin, Zin Zar, Kin Leong Pey, Nagarajan Raghavan, Yining Chen, and Souvik Mahapatra. "New Leakage Mechanism and Dielectric Breakdown Layer Detection in Metal-Nanocrystal-Embedded Dual-Layer Memory Gate Stack." IEEE Electron Device Letters 32, no. 6 (June 2011): 800–802. http://dx.doi.org/10.1109/led.2011.2131114.
Повний текст джерелаPadovani, Andrea, Nagarajan Raghavan, Luca Larcher, and Kin Leong Pey. "Identifying the First Layer to Fail in Dual-Layer ${\rm SiO}_{\rm x}/{\rm HfSiON}$ Gate Dielectric Stacks." IEEE Electron Device Letters 34, no. 10 (October 2013): 1289–91. http://dx.doi.org/10.1109/led.2013.2275182.
Повний текст джерелаKerber, A., E. Cartier, L. Pantisano, R. Degraeve, T. Kauerauf, Y. Kim, A. Hou, G. Groeseneken, H. E. Maes, and U. Schwalke. "Origin of the threshold voltage instability in SiO2/HfO2 dual layer gate dielectrics." IEEE Electron Device Letters 24, no. 2 (February 2003): 87–89. http://dx.doi.org/10.1109/led.2003.808844.
Повний текст джерелаXu, Kai-Da, Xi Zhu, Yang Yang, and Qiang Chen. "A Broadband On-Chip Bandpass Filter Using Shunt Dual-Layer Meander-Line Resonators." IEEE Electron Device Letters 41, no. 11 (November 2020): 1617–20. http://dx.doi.org/10.1109/led.2020.3027734.
Повний текст джерелаSu, Kai, Xin Zhang, Zi Wang, Guoqiang Lv, and Qibin Feng. "P‐3.1: Convolutional Neural Network based Image Segmentation Algorithm for Dual‐Layer LCDs." SID Symposium Digest of Technical Papers 53, S1 (October 2022): 671–74. http://dx.doi.org/10.1002/sdtp.16057.
Повний текст джерелаHuang, Yunrui, Hui Yang, Hao Zheng, Heyun Lin, and Z. Q. Zhu. "Analysis of flux barrier effect of LCF PM in series hybrid magnet variable flux memory machine." AIP Advances 13, no. 2 (February 1, 2023): 025230. http://dx.doi.org/10.1063/9.0000611.
Повний текст джерелаJin, Lun, and Steven J. Koester. "High-Performance Dual-Gated Single-Layer WS2 MOSFETs With Bi Contacts." IEEE Electron Device Letters 43, no. 4 (April 2022): 639–42. http://dx.doi.org/10.1109/led.2022.3149792.
Повний текст джерелаChang Seo Park, Byung Jin Cho, and Dim-Lee Kwong. "An integratable dual metal gate CMOS process using an ultrathin aluminum nitride buffer layer." IEEE Electron Device Letters 24, no. 5 (May 2003): 298–300. http://dx.doi.org/10.1109/led.2003.812548.
Повний текст джерелаMa, Xia, Ming Xu, Xiao-Juan Tian, Yong-Li Liu, Xin-Ri Zhang, and Ying Qiao. "A Retrospectively Study: Diagnosis of Pathological Types of Malignant Lung Tumors by Dual-layer Detector Spectral Computed Tomography." Technology in Cancer Research & Treatment 21 (January 2022): 153303382210744. http://dx.doi.org/10.1177/15330338221074498.
Повний текст джерелаYu, S., J. Jung, J. L. Hoyt, and D. A. Antoniadis. "Strained-Si–Strained-SiGe Dual-Channel Layer Structure as CMOS Substrate for Single Workfunction Metal-Gate Technology." IEEE Electron Device Letters 25, no. 6 (June 2004): 402–4. http://dx.doi.org/10.1109/led.2004.829038.
Повний текст джерелаBell, Roy, Jiaxi Hu, and R. H. Victora. "Dual Referenced Composite Free Layer Design for Improved Switching Efficiency of Spin-Transfer Torque Random Access Memory." IEEE Electron Device Letters 37, no. 9 (September 2016): 1108–11. http://dx.doi.org/10.1109/led.2016.2592324.
Повний текст джерелаRabbi, Md Hasnat, Mohammad Masum Billah, Abu Bakar Siddik, Suhui Lee, Jiseob Lee, and Jin Jang. "Extremely Stable Dual Gate Coplanar Amorphous InGaZnO Thin Film Transistor With Split Active Layer by N2O Annealing." IEEE Electron Device Letters 41, no. 12 (December 2020): 1782–85. http://dx.doi.org/10.1109/led.2020.3034119.
Повний текст джерела趙家賢, 趙家賢, та 陳居毓 陳居毓. "使用LCP軟性基板研製毫米波雙圓極化天線". 理工研究國際期刊 12, № 2 (жовтень 2022): 079–89. http://dx.doi.org/10.53106/222344892022101202006.
Повний текст джерелаTieranu, Eugen Nicolae, Radu Stavaru, Alexandru Rocsoreanu, Constantin Militaru, Ionut Donoiu, and Octavian Istratoaie. "A particular case of anterior STEMI in a young patient with an unexpected outcome." Romanian Journal of Cardiology 30, no. 3 (October 1, 2020): 459–63. http://dx.doi.org/10.47803/rjc.2020.30.3.459.
Повний текст джерелаZhu, Li Qiang, Xiang Li, Zhong Hui Yan, Hong Liang Zhang, and Qing Wan. "Dual Function of Antireflectance and Surface Passivation of Atomic-Layer-Deposited $\hbox{Al}_{2}\hbox{O}_{3}$ Films." IEEE Electron Device Letters 33, no. 12 (December 2012): 1753–55. http://dx.doi.org/10.1109/led.2012.2219491.
Повний текст джерелаTang, Zhaoyun, Jing Xu, Hong Yang, Hushan Cui, Bo Tang, Yefeng Xu, Hongli Wang, Junfeng Li, and Jiang Yan. "Impact of TaN as Wet Etch Stop Layer on Device Characteristics for Dual-Metal HKMG Last Integration CMOSFETs." IEEE Electron Device Letters 34, no. 12 (December 2013): 1488–90. http://dx.doi.org/10.1109/led.2013.2287271.
Повний текст джерелаLiu, J., H. C. Wen, J. P. Lu, and D. L. Kwong. "Dual-work-function metal gates by full silicidation of poly-Si with Co-Ni bi-Layers." IEEE Electron Device Letters 26, no. 4 (April 2005): 228–30. http://dx.doi.org/10.1109/led.2005.844696.
Повний текст джерелаLiu, Han, and Peide D. Ye. "$\hbox{MoS}_{2}$ Dual-Gate MOSFET With Atomic-Layer-Deposited $\hbox{Al}_{2}\hbox{O}_{3}$ as Top-Gate Dielectric." IEEE Electron Device Letters 33, no. 4 (April 2012): 546–48. http://dx.doi.org/10.1109/led.2012.2184520.
Повний текст джерелаSingh, Pawan K., Gaurav Bisht, Ralf Hofmann, Kaushal Singh, Nety Krishna, and Souvik Mahapatra. "Metal Nanocrystal Memory With Pt Single- and Dual-Layer NC With Low-Leakage $\hbox{Al}_{2}\hbox{O}_{3}$ Blocking Dielectric." IEEE Electron Device Letters 29, no. 12 (December 2008): 1389–91. http://dx.doi.org/10.1109/led.2008.2007308.
Повний текст джерелаWEI Duo-lei, 魏铎垒, 张建立 ZHANG Jian-li, 刘军林 LIU Jun-lin, 王小兰 WANG Xiao-lan, 吴小明 WU Xiao-ming, 郑畅达 ZHENG Chang-da, and 江风益 JIANG Feng-yi. "Effect of p-GaN Spacer Layer on Emission Spectrum of Yellow-green Dual Wavelength LED." Chinese Journal of Luminescence 41, no. 2 (2020): 146–52. http://dx.doi.org/10.3788/fgxb20204102.0146.
Повний текст джерелаRispal, L., and U. Schwalke. "Large-Scale In Situ Fabrication of Voltage-Programmable Dual-Layer High-$\kappa$ Dielectric Carbon Nanotube Memory Devices With High On/Off Ratio." IEEE Electron Device Letters 29, no. 12 (December 2008): 1349–52. http://dx.doi.org/10.1109/led.2008.2005850.
Повний текст джерелаLukaszkowicz, Krzysztof, Jozef Sondor, Agnieszka Paradecka, Mirosława Pawlyta, Bartosz Chmiela, Mieczysław Pancielejko, Bożena Szczucka-Lasota, Tomasz Węgrzyn, and Tomasz Tański. "Structure and Tribological Properties of AlCrN + CrCN Coating." Coatings 10, no. 11 (November 11, 2020): 1084. http://dx.doi.org/10.3390/coatings10111084.
Повний текст джерелаSekiguchi, Osamu, Nobuhiro Ohta, and Hiroaki Baba. "The Mechanism of Occurrence of Dual Fluorescence in Intermediate Case Molecules as Viewed From Rotational Effects." Laser Chemistry 7, no. 2-4 (January 1, 1987): 213–34. http://dx.doi.org/10.1155/lc.7.213.
Повний текст джерелаLiu, Mali, Haifeng Li, and Xu Liu. "10-2: A Deep Depth of Field Near Eye Light Field Displays Utilizing LC Lens and Dual-layer LCDs." SID Symposium Digest of Technical Papers 49, no. 1 (May 2018): 96–99. http://dx.doi.org/10.1002/sdtp.12491.
Повний текст джерелаHong-Jyh Li and M. I. Gardner. "Dual high-/spl kappa/ gate dielectric with poly gate electrode: HfSiON on nMOS and Al/sub 2/O/sub 3/ capping layer on pMOS." IEEE Electron Device Letters 26, no. 7 (July 2005): 441–44. http://dx.doi.org/10.1109/led.2005.851093.
Повний текст джерелаYuan, Yonggang, and Zesheng Xu. "Dual coronary embolization associated with atrial fibrillation: a case report." STEMedicine 2, no. 8 (September 9, 2021): e99. http://dx.doi.org/10.37175/stemedicine.v2i8.99.
Повний текст джерелаIn-Hyuk Song, Su-Hyuk Kang, Woo-Jin Nam, and Min-Koo Han. "A high-performance multichannel dual-gate poly-Si TFT fabricated by excimer laser irradiation on a floating a-Si thin film." IEEE Electron Device Letters 24, no. 9 (September 2003): 580–82. http://dx.doi.org/10.1109/led.2003.816586.
Повний текст джерелаRyoo, Hyun-Joo, and Sung-Min Yoon. "Channel Conductance Modulation of Dual-Gate Charge-Trap Oxide Synapse TFT Using In-Ga-Zn-O Channel and ZnO Trap Layers." IEEE Electron Device Letters 41, no. 11 (November 2020): 1661–64. http://dx.doi.org/10.1109/led.2020.3023138.
Повний текст джерелаWu, Yue, Shan Li, Shimin Ge, Yuan Xiong, and Chunsheng Jiang. "P-80: A Study about the Metal Corrosion and Diffusion Phenomenon in Cu-Mo Dual Layer Metal Wires for TFT-LCDs." SID Symposium Digest of Technical Papers 48, no. 1 (May 2017): 1543–45. http://dx.doi.org/10.1002/sdtp.11944.
Повний текст джерелаBanash, Mark A., and Warren S. Warren. "State-to-State Collisional Dynamics by Coherent Laser Pulse Phase, Shape, and Frequency Modification." Laser Chemistry 6, no. 1 (January 1, 1986): 47–60. http://dx.doi.org/10.1155/lc.6.47.
Повний текст джерелаCho, Yun-A. "The Placeness of Harbin Depicted in Dual Layers - Centering on Pak, Kyong-ni's ‘Toji’, or ‘The Land’." Literary Criticism 68 (June 30, 2018): 218–47. http://dx.doi.org/10.31313/lc.2018.06.68.218.
Повний текст джерелаMalhotra, Clare, Deepti Gunge, Ira Advani, Shreyes Boddu, Sedtavut Nilaad, and Laura Crotty-Alexander. "621 Association of E-cigarette and Tobacco Use with Adolescent Sleep Quality." Sleep 44, Supplement_2 (May 1, 2021): A244. http://dx.doi.org/10.1093/sleep/zsab072.619.
Повний текст джерелаKumar, Prathap, Blessvin Jino, Stalin Roy, and Manu Rajendran. "Retrograde Percutaneous Coronary Intervention in a Case of Takayasu Arteritis with Left Main Coronary Artery Chronic Total Occlusion." Case Reports in Cardiology 2022 (March 12, 2022): 1–5. http://dx.doi.org/10.1155/2022/3786613.
Повний текст джерелаKrenn, Kurt, and Le Thi Thu Huong. "Fluid characteristics from shallow magmatic environments: A contribution to danburite bearing Luc Yen pegmatites, northern Vietnam." VIETNAM JOURNAL OF EARTH SCIENCES 41, no. 1 (January 8, 2019): 1–9. http://dx.doi.org/10.15625/0866-7187/41/1/13541.
Повний текст джерелаMa, Xun, Ping Zhou, Monika Pilichowska, Chakra P. Chaulagain, Sandy Wong, and Raymond L. Comenzo. "siRNA for the Ig Light Chain Constant Region Reduces Light Chain Production and Secretion By Human Plasma Cells and in a Murine Xenograft Model." Blood 124, no. 21 (December 6, 2014): 5722. http://dx.doi.org/10.1182/blood.v124.21.5722.5722.
Повний текст джерелаJhang, Wun-Ciang, and Chih-Chieh Hsu. "Dual-Function Device Fabricated Using One Single SiO2 Resistive Switching Layer." IEEE Electron Device Letters, 2022, 1. http://dx.doi.org/10.1109/led.2022.3189212.
Повний текст джерелаTian, Qiaoling, Xiaohan Zhang, Xiaoning Zhao, Zhongqiang Wang, Ya Lin, Haiyang Xu, and Yichun Liu. "Dual Buffer Layers for Developing Electrochemical Metallization Memory with Low Current and High Endurance." IEEE Electron Device Letters, 2020, 1. http://dx.doi.org/10.1109/led.2020.3047837.
Повний текст джерела"Metal Floating Gate Memory Device With SiO2/HfO2 Dual-Layer as Engineered Tunneling Barrier." IEEE Electron Device Letters 35, no. 7 (July 2014): 744–46. http://dx.doi.org/10.1109/led.2014.2320971.
Повний текст джерелаGupta, Pankhuri, Naveen Sisodia, Tim Bohnert, Jose Diogo Costa, Ricardo Ferreira, and Pranaba Kishor Muduli. "Dual band radio frequency detector based on the simultaneous excitation of free and reference layer in a magnetic tunnel junction." IEEE Electron Device Letters, 2022, 1. http://dx.doi.org/10.1109/led.2022.3222071.
Повний текст джерелаRochira, Carla. "673 A CRACK AND A CLOT." European Heart Journal Supplements 24, Supplement_K (December 14, 2022). http://dx.doi.org/10.1093/eurheartjsupp/suac121.539.
Повний текст джерелаNicolae, E., R. Aflorii, and A. C. Popescu. "P1259 When it rains, it pours: Late presentation STEMI in a patient with intricate symptomatology due to concomitant acute pancreatitis and pneumonia." European Heart Journal - Cardiovascular Imaging 21, Supplement_1 (January 1, 2020). http://dx.doi.org/10.1093/ehjci/jez319.711.
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