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Добірка наукової літератури з теми "Dt élevé"
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Статті в журналах з теми "Dt élevé"
SOMO TOUKAM G, Mahbou, Mariama Dalanda DIALLO, Bienvenu HINNONE KAPAGNON, and Aliou GUISSE. "Evaluation des performances agronomiques des variétés améliorées de maïs (Zea mays L.) en milieu paysan dans la zone soudanienne du Tchad." Journal of Animal & Plant Sciences 41.3 (September 30, 2019): 6977–88. http://dx.doi.org/10.35759/janmplsci.v41-3.2.
Повний текст джерелаAlbert, E., O. Halfon, M. C. Mouren-Simeoni, and M. Dugas. "Etude comparative de deux groupes d’anorexiques mentaux examinés dans un service de psychiatrie de l’enfant et de l’adolescent." Psychiatry and Psychobiology 3, no. 2 (1988): 87–98. http://dx.doi.org/10.1017/s0767399x00001863.
Повний текст джерелаLAMORT-BOUCHE, M., T. PIPARD, C. PIGACHE, A. MOREAU, J.-B. FASSIER, and F. ZORZI. "Enseigner la conduite d’entretien semi-directif en recherche qualitative. Développement et évaluation d’un kit d’auto-apprentissage avec vidéo modèle et contre-modèle." EXERCER 31, no. 166 (October 1, 2020): 365–71. http://dx.doi.org/10.56746/exercer.2020.166.365.
Повний текст джерелаTjepkema, M., R. Wilkins, and A. Long. "Mortalité par cause en fonction du niveau de compétence professionnelle au Canada : une étude de suivi sur 16 ans." Maladies chroniques et blessures au Canada 33, no. 4 (September 2013): 219–30. http://dx.doi.org/10.24095/hpcdp.33.4.01f.
Повний текст джерелаДисертації з теми "Dt élevé"
Shahriari, Ejlal. "Commutateurs à semi-conducteurs rapides et à courant élevé pour les applications de puissance pulsée." Electronic Thesis or Diss., Pau, 2024. https://theses.hal.science/tel-04818494.
Повний текст джерелаMicro-second range high-current pulses (100s kA) are applied to generate megagauss-range magnetic fields. This high pulsed power technology has been employed in inertial fusion research, X-pinch, and high-energy-density physics. Moreover, a number of industrial applications such as magnetic pulse welding and rock fracturing require high average power, repeatability, and a reliable high-current pulse generator with a long lifespan. Hence, a fast solid-state switch development operating in the range of several hundred kA is of considerable importance.A fast high-current switch is one of the most complex components in a pulsed power generator. Historically, only gas-filled switches could operate under such extreme conditions. However, gas-filled switches have several well-known disadvantages, including low pulse repetition frequency, short lifetimes, and instability in triggering. They are also expensive to use, often requiring gas flow systems, costly gases, and recirculating chambers of gas for repetitive operation. These disadvantages have hindered the widespread adoption of pulsed power technologies.Recent advancements in semiconductor physics and technology have introduced solid-state switches into the pulsed power domain. In particular, silicon high-voltage structures triggered in impact-ionization wave mode present a promising solution for fast high-current solid-state switches (10s-100s kA and 10s kA/μs).The main goal of this thesis is to experimentally demonstrate the capability of high-voltage thyristors to switch fast-high current pulses. to accomplish this goal, two major axes of study are defined as the experimental and theoretical studies. In the experimental work, the main focus is determined based on a key limitation highlighted in the literature, i.e., the cross-sectional area of the thyristor. To eliminate this limitation several solutions have been investigated in this thesis including (i) triggering the largest commercially available thyristor, 100 mm wafer diameter with 5.2 kV static voltage breakdown. (ii) Parallel triggering of an assembly of two and four high-voltage thyristors. (iii) Series-parallel configuration in order to further increase blocking voltage and current capability of the switch simultaneously. In terms of theoretical study, the numerical simulation is conducted to shed light on the avalanche breakdown phenomena in impact-ionization switching mode