Увійти

Готові списки джерел за темами / Downconversion; solar cell; silicon / Статті в журналах

Статті в журналах з теми "Downconversion; solar cell; silicon"

Щоб переглянути інші типи публікацій з цієї теми, перейдіть за посиланням: Downconversion; solar cell; silicon.

Автор: Grafiati

Опубліковано: 10 грудня 2022

Оновлено: 28 січня 2023

Оформте джерело за APA, MLA, Chicago, Harvard та іншими стилями

Оберіть тип джерела:

Ознайомтеся з топ-50 статей у журналах для дослідження на тему "Downconversion; solar cell; silicon".

Біля кожної праці в переліку літератури доступна кнопка «Додати до бібліографії». Скористайтеся нею – і ми автоматично оформимо бібліографічне посилання на обрану працю в потрібному вам стилі цитування: APA, MLA, «Гарвард», «Чикаго», «Ванкувер» тощо.

Також ви можете завантажити повний текст наукової публікації у форматі «.pdf» та прочитати онлайн анотацію до роботи, якщо відповідні параметри наявні в метаданих.

Переглядайте статті в журналах для різних дисциплін та оформлюйте правильно вашу бібліографію.

1

Lau, Mei Kwan, and Jianhua Hao. "Broadband Near-Infrared Quantum Cutting in Metal-Ion Codoped Y3Al5O12Thin Films Grown by Pulsed-Laser Deposition for Solar Cell Application." Journal of Nanomaterials 2013 (2013): 1–6. http://dx.doi.org/10.1155/2013/587036.

Повний текст джерела

Анотація:

We have deposited thin films of yttrium aluminum garnet (YAG) doped with Ce3+and Yb3+on quartz and silicon substrates by pulsed laser deposition. Near-infrared (NIR) quantum cutting which involves the emission of NIR photons through the downconversion from Ce3+to Yb3+is realized. Upon the broadband excitation of Ce3+ions with a visible photon at the peak wavelength of 450 nm, NIR photons are generated by Yb3+ions, with an emission wavelength centered at 1030 nm. The luminescent decay curves of Ce3+were recorded as a supporting evidence corresponding to the energy transfer. This work offers a better and more convenient approach compatible with crystalline silicon solar cell compared to conventional bulk phosphors.

Стилі APA, Harvard, Vancouver, ISO та ін.

2

Lau, M. K., and Jian-Hua Hao. "Near-infrared Quantum Cutting in Eu3+-Yb3+ co-doped YAG through Downconversion for Silicon Solar Cell." Energy Procedia 15 (2012): 129–34. http://dx.doi.org/10.1016/j.egypro.2012.02.015.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

3

Sun, Jia Yue, Yi Ning Sun, Ji Cheng Zhu, Jun Hui Zeng, and Hai Yan Du. "Downconversion for Solar Cells in Sr₃Gd(PO₄)₃:Tb, Yb Phosphors." Advanced Materials Research 502 (April 2012): 136–39. http://dx.doi.org/10.4028/www.scientific.net/amr.502.136.

Повний текст джерела

Анотація:

An efficient near-infrared (NIR) quantum cutting (QC) Tb3+ and Yb3+ co-doped phosphor Sr3Gd(PO4)3 has been synthesized by conventional high temperature solid technique. Upon excitation of Tb3+ with a visible photon at 485 nm, two NIR photons could be emitted by Yb3+ through cooperative energy transfer (CTE) from Tb3+ to two Yb3+ ions. Excitation and emission spectra as well as ﬂuorescence decay measurements have been carried out to examine the occurrence of cooperative energy transfer (CET ) from Tb3+ to Yb3+ ions. The result indicates Tb3+ and Yb3+ co-doped Sr3Gd(PO4)3 is potentially used as down-converter layer in silicon-based solar cell.

Стилі APA, Harvard, Vancouver, ISO та ін.

4

Li, Jianming, Shaoan Zhang, Haoming Luo, Zhongfei Mu, Zhenzhang Li, Qingping Du, Junqin Feng, and Fugen Wu. "Efficient near ultraviolet to near infrared downconversion photoluminescence of La2GeO5: Bi3+, Nd3+ phosphor for silicon-based solar cells." Optical Materials 85 (November 2018): 523–30. http://dx.doi.org/10.1016/j.optmat.2018.09.024.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

5

Cheng, Chin-Lung, and Jung-Yen Yang. "Hydrothermal Synthesis of $\hbox{Eu}^{3+}$-Doped $\hbox{Y}(\hbox{OH})_{3}$ Nanotubes as Downconversion Materials for Efficiency Enhancement of Screen-Printed Monocrystalline Silicon Solar Cells." IEEE Electron Device Letters 33, no. 5 (May 2012): 697–99. http://dx.doi.org/10.1109/led.2012.2187771.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

6

Elleuch, R., R. Salhi, J. L. Deschanvres, and R. Maalej. "Antireflective downconversion ZnO:Er3+,Yb3+ thin film for Si solar cell applications." Journal of Applied Physics 117, no. 5 (February 7, 2015): 055301. http://dx.doi.org/10.1063/1.4906976.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

7

Lakshminarayana, G., Hucheng Yang, Song Ye, Yin Liu, and Jianrong Qiu. "Cooperative downconversion luminescence in Pr3+/Yb3+:SiO2–Al2O3–BaF2–GdF3 glasses." Journal of Materials Research 23, no. 11 (November 2008): 3090–95. http://dx.doi.org/10.1557/jmr.2008.0372.

Повний текст джерела

Анотація:

Oxyfluoride aluminosilicate glasses with compositions of 50SiO2–20Al2O3–20BaF2–10GdF3–0.5PrF3–xYbF3(x = 0, 1.0, 2.5, 5, 7.5, 10, 15, 20, 25, and 30 mol%) have been prepared to study their thermal and optical properties. From the differential thermal analysis (DTA) measurement, glass-transition temperatures and onset crystallization temperatures have been evaluated and from them, glass-stability factors against crystallization were calculated. Glass stabilities were decreased gradually with fluoride content increment in all the studied glasses. The photoluminescence and decay measurements have also been carried out for these glasses. In these glasses, an efficient near-infrared (NIR) quantum cutting with optimal quantum efficiency approaching 160% have been demonstrated, by exploring the cooperative downconversion mechanism from Pr3+ to Yb3+ with 481 nm (3P0 → 3H4) excitation wave length. These glasses are promising materials to achieve high-efficiency silicon-base solar cells by means of downconversion in the visible part of the solar spectrum.

Стилі APA, Harvard, Vancouver, ISO та ін.

8

Gao, Yong Chao, Bai Tong Zhao, and Wen Xiu Gao. "Solar Grade Silicon Materials and Poly-Silicon Solar Cell." Materials Science Forum 685 (June 2011): 119–22. http://dx.doi.org/10.4028/www.scientific.net/msf.685.119.

Повний текст джерела

Анотація:

In this paper, we should analyze the characteristic of the solar grade poly-silicon up-graded by physical process and make comparison with silicon made by Siemens process in wafer and solar cell, also we make a analysis for the degradation of the solar cell module. From the result we find that the silicon block have no obvious drawback such as crack detected by GT infrared and the average minority carrier lifetime is 3.86μs, the minority lifetime and resistivity of the wafer is better than the standard, solar cell prepared using the solar grade silicon wafer by physical process has an average conversion efficiency of 15.78% which is 0.12% higher than the Siemens wafer mainly due to high open circuit voltage. Efficiency degradation of the solar cell made by physical process is less than 3% after half an year which met the international standard. So we come to the conclusion that solar grade silicon prepared by physical process is a promising alternative material for PV industry and become main solar grade poly-silicon in the future.

Стилі APA, Harvard, Vancouver, ISO та ін.

9

Ranjan, S., S. Balaji, Rocco A. Panella, and B. Erik Ydstie. "Silicon solar cell production." Computers & Chemical Engineering 35, no. 8 (August 2011): 1439–53. http://dx.doi.org/10.1016/j.compchemeng.2011.04.017.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

10

Blakers, Andrew W., Aihua Wang, Adele M. Milne, Jianhua Zhao, and Martin A. Green. "22.8% efficient silicon solar cell." Applied Physics Letters 55, no. 13 (September 25, 1989): 1363–65. http://dx.doi.org/10.1063/1.101596.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

11

Palmeri, D., G. Martinelli, G. C. Cecchi, M. C. Carotta, M. Merli, L. Passari, and R. van Steenwinkel. "A reverse silicon solar cell." Solar Cells 31, no. 3 (June 1991): 217–22. http://dx.doi.org/10.1016/0379-6787(91)90024-j.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

12

Hafezi, Razagh, Soroush Karimi, Sharie Jamalzae, and Masoud Jabbari. "Material and solar cell research in high efficiency micromorph tandem solar cell." Ciência e Natura 37 (December 19, 2015): 434. http://dx.doi.org/10.5902/2179460x20805.

Повний текст джерела

Анотація:

“Micromorph” tandem solar cells consisting of a microcrystalline silicon bottom cell and an amorphous silicon top cell are considered as one of the most promising new thin-film silicon solar-cell concepts. Their promise lies in the hope of simultaneously achieving high conversion efficiencies at relatively low manufacturing costs. The concept was introduced by IMT Neuchâtel, based on the VHF-GD (very high frequency glow discharge) deposition method. The key element of the micromorph cell is the hydrogenated microcrystalline silicon bottom cell that opens new perspectives for low-temperature thin-film crystalline silicon technology. This paper describes the use, within p–i–n- and n–i–p-type solar cells, of hydrogenated amorphous silicon (a-Si:H) and hydrogenated microcrystalline silicon (_c-Si:H) thin films (layers), both deposited at low temperatures (200_C) by plasma-assisted chemical vapour deposition (PECVD), from a mixture of silane and hydrogen. Optical and electrical properties of the i-layers are described. Finally, present performances and future perspectives for a high efficiency ‘micromorph’ (mc-Si:Hya-Si:H) tandem solar cells are discussed.

Стилі APA, Harvard, Vancouver, ISO та ін.

13

Ashour, E. S. M., M. Y. Sulaiman, N. Amin, and Z. Ibrahim. "Silicon Nitride Passivation of Silicon Nanowires Solar Cell." Journal of Physics: Conference Series 431 (April 15, 2013): 012021. http://dx.doi.org/10.1088/1742-6596/431/1/012021.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

14

Kaneko, Kyojiro, Junya Masuda, and Kazuyoshi Tabata. "Silicon ingot casting for solar cell." Bulletin of the Japan Institute of Metals 28, no. 8 (1989): 664–71. http://dx.doi.org/10.2320/materia1962.28.664.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

15

YAE, Shinji. "Porous Silicon for Solar Cell Application." Journal of the Surface Finishing Society of Japan 65, no. 1 (2014): 12–17. http://dx.doi.org/10.4139/sfj.65.12.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

16

Han, Jianshu, Malcom David Abbott, Phillip G. Hamer, Bram Hoex, Lu Wang, Anthony Lochtefeld, and Allen M. Barnett. "Ultrathin Silicon Solar Cell Loss Analysis." IEEE Journal of Photovoltaics 6, no. 5 (September 2016): 1160–66. http://dx.doi.org/10.1109/jphotov.2016.2590949.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

17

Thiyagu, Subramani, Zingway Pei, and Ming-Sian Jhong. "Amorphous silicon nanocone array solar cell." Nanoscale Research Letters 7, no. 1 (2012): 172. http://dx.doi.org/10.1186/1556-276x-7-172.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

18

OHNISHI, Michitoshi. "Ultralight Flexible Amorphous Silicon Solar Cell." Kobunshi 44, no. 2 (1995): 79. http://dx.doi.org/10.1295/kobunshi.44.79.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

19

Gourbilleau, F., C. Dufour, B. Rezgui, and G. Brémond. "Silicon nanostructures for solar cell applications." Materials Science and Engineering: B 159-160 (March 2009): 70–73. http://dx.doi.org/10.1016/j.mseb.2008.10.052.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

20

Zhao, J., A. Wang, E. Abbaspour-Sani, F. Yun, and M. A. Green. "Improved efficiency silicon solar cell module." IEEE Electron Device Letters 18, no. 2 (February 1997): 48–50. http://dx.doi.org/10.1109/55.553040.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

21

Fagotto, E. A. M., F. Decker, and M. Fracastoro-Decker. "Electroacoustics in a silicon solar cell." Applied Physics A: Materials Science & Processing 61, no. 4 (September 1, 1995): 447–52. http://dx.doi.org/10.1007/s003390050227.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

22

Cheng, T. H., P. S. Kuo, C. Y. Ko, C. Y. Chen, and C. W. Liu. "Electroluminescence from monocrystalline silicon solar cell." Journal of Applied Physics 105, no. 10 (May 15, 2009): 106107. http://dx.doi.org/10.1063/1.3117523.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

23

Li, Jianming. "Novel silicon solar cell research program." Solar Energy Materials and Solar Cells 33, no. 1 (May 1994): 107–11. http://dx.doi.org/10.1016/0927-0248(94)90294-1.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

24

Fagotto, E. A. M., F. Decker, and M. Fracastoro-Decker. "Electroacoustics in a silicon solar cell." Applied Physics A Materials Science & Processing 61, no. 4 (October 1995): 447–52. http://dx.doi.org/10.1007/bf01540122.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

25

Green, M. A., A. W. Blakers, S. Narayanan, and M. Taouk. "Improvements in silicon solar cell efficiency." Solar Cells 17, no. 1 (March 1986): 75–83. http://dx.doi.org/10.1016/0379-6787(86)90060-8.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

26

Shah, A. V., H. Schade, M. Vanecek, J. Meier, E. Vallat-Sauvain, N. Wyrsch, U. Kroll, C. Droz, and J. Bailat. "Thin-film silicon solar cell technology." Progress in Photovoltaics: Research and Applications 12, no. 23 (March 2004): 113–42. http://dx.doi.org/10.1002/pip.533.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

27

Wang, A., J. Zhao, S. R. Wenham, and M. A. Green. "21.5% Efficient thin silicon solar cell." Progress in Photovoltaics: Research and Applications 4, no. 1 (January 1996): 55–58. http://dx.doi.org/10.1002/(sici)1099-159x(199601/02)4:1<55::aid-pip111>3.0.co;2-p.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

28

Lindmayer, J., and J. F. Allison. "The violet cell: An improved silicon solar cell." Solar Cells 29, no. 2-3 (August 1990): 151–66. http://dx.doi.org/10.1016/0379-6787(90)90023-x.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

29

Kim, Hyunsung, Sangho Kim, Youngseok Lee, Jun-Hui Jeong, Yongjun Kim, Vinh Ai Dao, and Junsin Yi. "Enhancing Solar Cell Properties of Heterojunction Solar Cell in Amorphous Silicon Carbide." Journal of the Korean Institute of Electrical and Electronic Material Engineers 29, no. 6 (June 1, 2016): 376–79. http://dx.doi.org/10.4313/jkem.2016.29.6.376.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

30

Kim, Ka-Hyun. "Study of Light-induced Degradation in Thin Film Silicon Solar Cells: Hydrogenated Amorphous Silicon Solar Cell and Nano-quantum Dot Silicon Thin Film Solar Cell." Journal of the Korean Solar Energy Society 39, no. 1 (February 1, 2019): 1–9. http://dx.doi.org/10.7836/kses.2019.39.1.001.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

31

Kim, Jeong, Sang Wook Park, In Sik Moon, Moon Jae Lee, and Dae Won Kim. "Porous Silicon Layer by Electrochemical Etching for Silicon Solar Cell." Solid State Phenomena 124-126 (June 2007): 987–90. http://dx.doi.org/10.4028/www.scientific.net/ssp.124-126.987.

Повний текст джерела

Анотація:

An Electrochemical etching was used to form the porous silicon (PS) layer on the surface of the crystalline silicon wafer. The PS layer, in this study, will act as an antireflection coating to reduce the reflection of the incident light into the solar cell. The etching solution (electrolyte) was prepared by mixing HF (50%) and ethanol which was introduced for efficient bubble elimination on the silicon surface during etching process. The anodization of the silicon surface was performed under a constant current (galvanostat mode of the power supply), and process parameters, such as current density and etching time, were carefully tuned to minimize the surface reflectance of the heavily-doped wafer with sheet resistance between 20-30 / .

Стилі APA, Harvard, Vancouver, ISO та ін.

32

Do, Kyeom Seon, Min Gu Kang, Je Jun Park, Gi Hwan Kang, Jae-Min Myoung, and Hee-eun Song. "Surface Texturing of Crystalline Silicon Solar Cell Using Silicon Nanowires." Japanese Journal of Applied Physics 52, no. 9R (September 1, 2013): 092301. http://dx.doi.org/10.7567/jjap.52.092301.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

33

Dzhafarov, T. D., S. S. Aslanov, S. H. Ragimov, M. S. Sadigov, and S. Aydin Yuksel. "Effect of nanoporous silicon coating on silicon solar cell performance." Vacuum 86, no. 12 (July 2012): 1875–79. http://dx.doi.org/10.1016/j.vacuum.2012.04.042.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

34

Zhang, Xinyu, Andres Cuevas, Bénédicte Demaurex, and Stefaan De Wolf. "Sputtered Hydrogenated Amorphous Silicon for Silicon Heterojunction Solar Cell Fabrication." Energy Procedia 55 (2014): 865–72. http://dx.doi.org/10.1016/j.egypro.2014.08.070.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

35

Huang, Yuan Ming, Qing Lan Ma, Ming Meng, and Bao Gai Zhai. "Porous Silicon Based Solar Cells." Materials Science Forum 663-665 (November 2010): 836–39. http://dx.doi.org/10.4028/www.scientific.net/msf.663-665.836.

Повний текст джерела

Анотація:

The primary aim of this communication is to introduce a novel approach of preparation of solar cell, viz. PS based solar cell, which is on the basis of the basic principle of the well established photovoltaic effect. We carefully investigate the current-voltage characteristics of the PS-based solar cell by virtue of performing the measurement of both current and voltage of PS-based solar cell under the condition of the sunlight irradiation and priori to sunlight irradiation in the purpose of observing clearly the photovoltaic effect possessed by the PS based solar cell. Judging by the results obtained in this paper, we can safely draw the conclusion that porous silicon is a good candidate material for the preparation of solar cell, that is to say that our study is giving high hope for the industrial production of high efficient PS-based thin film solar cells.

Стилі APA, Harvard, Vancouver, ISO та ін.

36

Singh, O. P., S. K. Singh, and A. Gaur. "Performance of amorphous silicon solar cell module and solar lantern." Renewable Energy 11, no. 4 (August 1997): 421–26. http://dx.doi.org/10.1016/s0960-1481(97)00010-4.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

37

Jiang, Chuan, Tian Ze Li, Xia Zhang, and Luan Hou. "Simulation of Silicon Solar Cell Using PC1D." Advanced Materials Research 383-390 (November 2011): 7032–36. http://dx.doi.org/10.4028/www.scientific.net/amr.383-390.7032.

Повний текст джерела

Анотація:

PC1D software, which was developed by the University of New South Wales, has been used to simulate photovoltaic properties of crystalline semiconductor devices. The paper focuses on the simulation of silicon solar cell by PC1D. The simulation of silicon solar cell is carried out by setting up key parameters, which include device area, thickness, band gap, etc. Several important characteristics of silicon solar cells are obtained by simulation.

Стилі APA, Harvard, Vancouver, ISO та ін.

38

Asmontas, S., J. Gradauskas, A. Griguceviciene, K. Leinartas, A. Lucun, M. Mujahid, K. Petrauskas, et al. "Triple-cation perovskite/silicon tandem solar cell." Ukrainian Journal of Physical Optics 23, no. 4 (2022): 193–200. http://dx.doi.org/10.3116/16091833/23/4/193/2022.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

39

Azim, Osama A., I. S. Yahia, and G. B. Sakr. "Characterization of mono-crystalline silicon solar cell." Applied Solar Energy 50, no. 3 (July 2014): 146–55. http://dx.doi.org/10.3103/s0003701x14030037.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

40

ZHANG, Wu-jie, Di LI, and Feng YE. "Texture defect inspection for silicon solar cell." Journal of Computer Applications 30, no. 10 (December 28, 2010): 2702–4. http://dx.doi.org/10.3724/sp.j.1087.2010.02702.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

41

Kim, Joondong, Ju-Hyung Yun, Chang-Soo Han, Yong Jae Cho, Jeunghee Park, and Yun Chang Park. "Multiple silicon nanowires-embedded Schottky solar cell." Applied Physics Letters 95, no. 14 (October 5, 2009): 143112. http://dx.doi.org/10.1063/1.3245310.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

42

Li, Jianming, Ming Chong, Jiancheng Zhu, Yuanjing Li, Jiadong Xu, Peida Wang, Zuoqi Shang, Zhankun Yang, Ronghua Zhu, and Xiolan Cao. "35% efficient nonconcentrating novel silicon solar cell." Applied Physics Letters 60, no. 18 (May 4, 1992): 2240–42. http://dx.doi.org/10.1063/1.107042.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

43

Kroon, M. A., R. A. C. M. M. van Swaaij, M. Zeman, V. I. Kuznetsov, and J. W. Metselaar. "Hydrogenated amorphous silicon transverse junction solar cell." Applied Physics Letters 72, no. 2 (January 12, 1998): 209–10. http://dx.doi.org/10.1063/1.120687.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

44

Pacebutas, V., K. Grigoras, and A. Krotkus. "Porous silicon applications in solar cell technology." Physica Scripta T69 (January 1, 1997): 255–58. http://dx.doi.org/10.1088/0031-8949/1997/t69/053.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

45

Gleichmann, R., B. Cunningham, and D. G. Ast. "Process‐induced defects in solar cell silicon." Journal of Applied Physics 58, no. 1 (July 1985): 223–29. http://dx.doi.org/10.1063/1.335716.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

46

Shokeen, Poonam, Amit Jain, and Avinashi Kapoor. "Plasmonic ZnO/p-silicon heterojunction solar cell." Optical Materials 67 (May 2017): 32–37. http://dx.doi.org/10.1016/j.optmat.2017.03.033.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

47

Choi, Youngmoon, Deok-kee Kim, Eun Cheol Do, Dongkyun Kim, Jinsoo Mun, Jin Wook Lee, Yeonil Lee, and Yun Gi Kim. "Interdigitated front contact crystalline silicon solar cell." Solar Energy 100 (February 2014): 94–101. http://dx.doi.org/10.1016/j.solener.2013.12.007.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

48

Ghannam, M., S. Sivoththaman, J. Poortmans, J. Szlufcik, J. Nijs, R. Mertens, and R. Van Overstraeten. "Trends in industrial silicon solar cell processes." Solar Energy 59, no. 1-3 (January 1997): 101–10. http://dx.doi.org/10.1016/s0038-092x(96)00095-3.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

49

Kamp, Mathias, Jonas Bartsch, Gisela Cimiotti, Roman Keding, Ardiana Zogaj, Christian Reichel, Andre Kalio, Markus Glatthaar, and Stefan Glunz. "Zincate processes for silicon solar cell metallization." Solar Energy Materials and Solar Cells 120 (January 2014): 332–38. http://dx.doi.org/10.1016/j.solmat.2013.05.035.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

50

Ganiany, M. M., M. M. Ibrahim, M. Abd Hameed, and S. M. El-Kream. "Solar photometry: Application of new silicon cell." Lighting Research and Technology 29, no. 3 (September 1, 1997): 179–82. http://dx.doi.org/10.1177/14771535970290031001.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

Ми пропонуємо знижки на всі преміум-плани для авторів, чиї праці увійшли до тематичних добірок літератури. Зв'яжіться з нами, щоб отримати унікальний промокод!