Статті в журналах з теми "Doping Effects"
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Elmar qızı Şahbazlı, Nəzrin. "Prohibited doping substances and methods, their definition. Doping control procedure." SCIENTIFIC WORK 65, no. 04 (April 21, 2021): 147–50. http://dx.doi.org/10.36719/2663-4619/65/147-150.
Повний текст джерелаMd. Ziaul Amin, Md Ziaul Amin, Khurram Karim Qureshi Khurram Karim Qureshi, and Md Mahbub Hossain Md. Mahbub Hossain. "Doping radius effects on an erbium-doped fiber amplifier." Chinese Optics Letters 17, no. 1 (2019): 010602. http://dx.doi.org/10.3788/col201917.010602.
Повний текст джерелаYu, Fucheng, Hailong Hu, Bolong Wang, Haishan Li, Tianyun Song, Boyu Xu, Ling He, Shu Wang, and Hongyan Duan. "Effects of Al doping on defect behaviors of ZnO thin film as a photocatalyst." Materials Science-Poland 37, no. 3 (September 1, 2019): 437–45. http://dx.doi.org/10.2478/msp-2019-0050.
Повний текст джерелаLi, Dan, Wei-Qing Huang, Zhong Xie, Liang Xu, Yin-Cai Yang, Wangyu Hu, and Gui-Fang Huang. "Mechanism of enhanced photocatalytic activities on tungsten trioxide doped with sulfur: Dopant-type effects." Modern Physics Letters B 30, no. 27 (October 10, 2016): 1650340. http://dx.doi.org/10.1142/s0217984916503401.
Повний текст джерелаHeiblum, M. "Doping effects in AlGaAs." Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 3, no. 3 (May 1985): 820. http://dx.doi.org/10.1116/1.583110.
Повний текст джерелаGeibel, C., C. Schank, F. Jährling, B. Buschinger, A. Grauel, T. Lühmann, P. Gegenwart, R. Helfrich, P. H. P. Reinders, and F. Steglich. "Doping effects on UPd2Al3." Physica B: Condensed Matter 199-200 (April 1994): 128–31. http://dx.doi.org/10.1016/0921-4526(94)91757-4.
Повний текст джерелаWeiden, M., W. Richter, C. Geibel, F. Steglich, P. Lemmens, B. Eisener, M. Brinkmann, and G. Güntherodt. "Doping effects in CuGeO3." Physica B: Condensed Matter 225, no. 3-4 (July 1996): 177–90. http://dx.doi.org/10.1016/0921-4526(96)86773-1.
Повний текст джерелаWang, Zhi Yong. "The Effects of Heteroatom-Doping in Stone-Wales Defects on the Electronic Properties of Graphene Nanoribbons." Advanced Materials Research 463-464 (February 2012): 793–97. http://dx.doi.org/10.4028/www.scientific.net/amr.463-464.793.
Повний текст джерелаWei, Yin, Hongjie Wang, Xuefeng Lu, Xingyu Fan, and Heng Wei. "Effects of element doping on electronic structures and optical properties in cubic boron nitride from first-principles." Modern Physics Letters B 31, no. 16 (June 2017): 1750166. http://dx.doi.org/10.1142/s0217984917501664.
Повний текст джерелаMohtar, Safia Syazana, Farhana Aziz, Ahmad Fauzi Ismail, Nonni Soraya Sambudi, Hamidah Abdullah, Ahmad Nazrul Rosli, and Bunsho Ohtani. "Impact of Doping and Additive Applications on Photocatalyst Textural Properties in Removing Organic Pollutants: A Review." Catalysts 11, no. 10 (September 26, 2021): 1160. http://dx.doi.org/10.3390/catal11101160.
Повний текст джерелаChen, Hungru, and Naoto Umezawa. "Sensitization of Perovskite Strontium Stannate SrSnO3towards Visible-Light Absorption by Doping." International Journal of Photoenergy 2014 (2014): 1–3. http://dx.doi.org/10.1155/2014/643532.
Повний текст джерелаSingh, Bhavana, S. B. Shrivastava, and V. Ganesan. "Effects of Mn Doping on Zinc Oxide Films Prepared by Spray Pyrolysis Technique." International Journal of Nanoscience 16, no. 01 (February 2017): 1650024. http://dx.doi.org/10.1142/s0219581x16500241.
Повний текст джерелаMoritomo, Y., Sh Xu, T. Akimoto, A. Machida, N. Hamada, K. Ohoyama, E. Nishibori, M. Takata, and M. Sakata. "Electron doping effects in conductingSr2FeMoO6." Physical Review B 62, no. 21 (December 1, 2000): 14224–28. http://dx.doi.org/10.1103/physrevb.62.14224.
Повний текст джерелаSun, Young, Xiaojun Xu, and Yuheng Zhang. "Effects of Fe doping inLa0.67Sr0.33CoO3." Physical Review B 62, no. 9 (September 1, 2000): 5289–92. http://dx.doi.org/10.1103/physrevb.62.5289.
Повний текст джерелаKim, W. W., and G. R. Stewart. "Effects of hydrogen doping onUPd2Al3." Physical Review B 50, no. 14 (October 1, 1994): 9948–51. http://dx.doi.org/10.1103/physrevb.50.9948.
Повний текст джерелаGhosh, K., S. B. Ogale, R. Ramesh, R. L. Greene, T. Venkatesan, K. M. Gapchup, Ravi Bathe, and S. I. Patil. "Transition-element doping effects inLa0.7Ca0.3MnO3." Physical Review B 59, no. 1 (January 1, 1999): 533–37. http://dx.doi.org/10.1103/physrevb.59.533.
Повний текст джерелаBlasco, J., J. A. Rodríguez-Velamazán, C. Ritter, J. Sesé, J. Stankiewicz, and J. Herrero-Martín. "Electron doping effects on Sr2FeReO6." Solid State Sciences 11, no. 9 (September 2009): 1535–41. http://dx.doi.org/10.1016/j.solidstatesciences.2009.06.026.
Повний текст джерелаVan Overstraeten, Roger J., and Robert P. Mertens. "Heavy doping effects in silicon." Solid-State Electronics 30, no. 11 (November 1987): 1077–87. http://dx.doi.org/10.1016/0038-1101(87)90070-0.
Повний текст джерелаFUNABIKI, Fuji, Toshio KAMIYA, and Hideo HOSONO. "Doping effects in amorphous oxides." Journal of the Ceramic Society of Japan 120, no. 1407 (2012): 447–57. http://dx.doi.org/10.2109/jcersj2.120.447.
Повний текст джерелаFUNABIKI, Fuji, Toshio KAMIYA, and Hideo HOSONO. "Doping effects in amorphous oxides." Journal of the Ceramic Society of Japan 120, no. 1408 (2012): 616—A—616—A. http://dx.doi.org/10.2109/jcersj2.120.616-a.
Повний текст джерелаLi, J. Q., C. C. Lam, J. Feng, and K. C. Hung. "Effects of In doping in." Superconductor Science and Technology 11, no. 2 (February 1, 1998): 217–22. http://dx.doi.org/10.1088/0953-2048/11/2/008.
Повний текст джерелаPiner, E. L., D. M. Keogh, J. S. Flynn, and J. M. Redwing. "AlGaN/GaN High Electron Mobility Transistor Structure Design and Effects on Electrical Properties." MRS Internet Journal of Nitride Semiconductor Research 5, S1 (2000): 349–54. http://dx.doi.org/10.1557/s109257830000449x.
Повний текст джерелаR.W. Ahmad, W., M. H. Mamat, A. S. Zoolfakar, Z. Khusaimi, M. M. Yusof, A. S. Ismail, S. A. Saidi, and M. Rusop. "The Effects of Sn-Doping on a-Fe2O3 Nanostructures Properties." International Journal of Engineering & Technology 7, no. 3.11 (July 21, 2018): 34. http://dx.doi.org/10.14419/ijet.v7i3.11.15925.
Повний текст джерелаLin, Huixing, Wei Chen, and Lan Luo. "Effects of V2O5 on the synthesis of Ba2Ti9O20 powders." Journal of Materials Research 20, no. 10 (October 2005): 2741–44. http://dx.doi.org/10.1557/jmr.2005.0333.
Повний текст джерелаJandow, Nidhal Nissan. "Effects of Cu-Doping on Optical Properties of NiO." International Letters of Chemistry, Physics and Astronomy 48 (March 2015): 155–62. http://dx.doi.org/10.18052/www.scipress.com/ilcpa.48.155.
Повний текст джерелаJandow, Nidhal Nissan. "Effects of Cu-Doping on Optical Properties of NiO." International Letters of Chemistry, Physics and Astronomy 48 (March 25, 2015): 155–62. http://dx.doi.org/10.56431/p-5mlawz.
Повний текст джерелаEl-Shobaky, G. A., M. A. Shouman, and M. N. Alaya. "Effects of Li2O Doping on the Surface and Catalytic Properties of Co3O4–Fe2O3 Solids Precalcined at Different Temperatures." Adsorption Science & Technology 18, no. 3 (April 2000): 243–60. http://dx.doi.org/10.1260/0263617001493413.
Повний текст джерелаGoldmann, Benedek A., Matt J. Clarke, James A. Dawson, and M. Saiful Islam. "Atomic-scale investigation of cation doping and defect clustering in the anti-perovskite Na3OCl sodium-ion conductor." Journal of Materials Chemistry A 10, no. 5 (2022): 2249–55. http://dx.doi.org/10.1039/d1ta07588h.
Повний текст джерелаTsubouchi, Nobuteru, M. Ogura, H. Watanabe, Akiyoshi Chayahara, and Hideyo Okushi. "Diamond Doped by Hot Ion Implantation." Materials Science Forum 600-603 (September 2008): 1353–56. http://dx.doi.org/10.4028/www.scientific.net/msf.600-603.1353.
Повний текст джерелаSrinivasan, Bhuvanesh, Alain Gellé, Jean-François Halet, Catherine Boussard-Pledel, and Bruno Bureau. "Detrimental Effects of Doping Al and Ba on the Thermoelectric Performance of GeTe." Materials 11, no. 11 (November 11, 2018): 2237. http://dx.doi.org/10.3390/ma11112237.
Повний текст джерелаKo, Hang-Ju, Yefan Chen, Soon-Ku Hong, and Takafumi Yao. "Doping effects in ZnO layers using Li3N as a doping source." Journal of Crystal Growth 251, no. 1-4 (April 2003): 628–32. http://dx.doi.org/10.1016/s0022-0248(03)00830-3.
Повний текст джерелаNie, Xiliang, Shuping Zhuo, Gloria Maeng, and Karl Sohlberg. "Doping ofTiO2Polymorphs for Altered Optical and Photocatalytic Properties." International Journal of Photoenergy 2009 (2009): 1–22. http://dx.doi.org/10.1155/2009/294042.
Повний текст джерелаJing, Ming Han, Jun Lin Yang, Yi Liu, Zheng Jing Zhao, Xiao Qian Wang, Jing Bo Li, and Hai Bo Jin. "W-Nb Co-Doped VO<sub>2</sub> Films Realizing near Room-Temperature Transition and Satisfactory Thermochromic Performance for Smart Window." Materials Science Forum 1070 (October 13, 2022): 145–55. http://dx.doi.org/10.4028/p-rp934x.
Повний текст джерелаTeng, Peng, Tong Zhou, Yonghuan Wang, Ke Zhao, Xiegang Zhu, and Xinchun Lai. "Electrical transport properties of cerium doped Bi2Te3 thin films grown by molecular beam epitaxy." Journal of Semiconductors 42, no. 12 (December 1, 2021): 122902. http://dx.doi.org/10.1088/1674-4926/42/12/122902.
Повний текст джерелаNi, Tie Quan, Chang Jun Ke, and Bing Yuan. "Effects of Modified Gypsum on Autoclaved Products Strength." Advanced Materials Research 374-377 (October 2011): 1235–38. http://dx.doi.org/10.4028/www.scientific.net/amr.374-377.1235.
Повний текст джерелаJian, Yongxin, Zhifu Huang, Yu Wang, and Jiandong Xing. "Effects of Doped Elements (Si, Cr, W and Nb) on the Stability, Mechanical Properties and Electronic Structures of MoAlB Phase by the First-Principles Calculation." Materials 13, no. 19 (September 23, 2020): 4221. http://dx.doi.org/10.3390/ma13194221.
Повний текст джерелаHsu, Wen K., Steven Firth, Philipp Redlich, Mauricio Terrones, Humberto Terrones, Yan Q. Zhu, Nicole Grobert, et al. "Boron-doping effects in carbon nanotubes." Journal of Materials Chemistry 10, no. 6 (2000): 1425–29. http://dx.doi.org/10.1039/b000720j.
Повний текст джерелаMigita, M., K. Sugai, M. Takeda, M. Uehara, T. Kuramoto, Y. Takano, Y. Mizuguchi, D. Hamane, and Y. Kimishima. "Ag Doping Effects in FeSe0.5Te0.5 superconductor." Transactions of the Materials Research Society of Japan 38, no. 4 (2013): 609–13. http://dx.doi.org/10.14723/tmrsj.38.609.
Повний текст джерелаSchmidt, T. M., P. P. M. Venezuela, M. J. Caldas, and A. Fazzio. "Carbon doping of GaAs: Compensation effects." Applied Physics Letters 66, no. 20 (May 15, 1995): 2715–17. http://dx.doi.org/10.1063/1.113498.
Повний текст джерелаYang, Jie, and Jun Shen. "Doping effects in organic electroluminescent devices." Journal of Applied Physics 84, no. 4 (August 15, 1998): 2105–11. http://dx.doi.org/10.1063/1.368271.
Повний текст джерелаMalavasi, Lorenzo, Maria Cristina Mozzati, Clemens Ritter, Vladimir Pomjakushin, Cristina Tealdi, Carlo Bruno Azzoni, and Giorgio Flor. "Doping Effects in Single-Layered La0.5Sr1.5MnO4Manganite." Journal of Physical Chemistry B 110, no. 35 (September 2006): 17430–36. http://dx.doi.org/10.1021/jp063384+.
Повний текст джерелаBahoosh, Safa Golrokh, and J. M. Wesselinowa. "Ion doping effects in multiferroic MnWO4." Journal of Applied Physics 111, no. 8 (April 15, 2012): 083906. http://dx.doi.org/10.1063/1.4703913.
Повний текст джерелаEriksson, S. G., L. G. Johansson, and C. Olsson. "Doping effects on the 123-system." Physica C: Superconductivity 153-155 (1988): 902–3. http://dx.doi.org/10.1016/s0921-4534(88)80146-1.
Повний текст джерелаEggert, Sebastian, and Fabrizio Anfuso. "Doping effects in low dimensional antiferromagnets." Physica B: Condensed Matter 384, no. 1-2 (October 2006): 192–95. http://dx.doi.org/10.1016/j.physb.2006.05.225.
Повний текст джерелаMousavi, Hamze. "Boron doping effects on graphene susceptibility." Physica E: Low-dimensional Systems and Nanostructures 43, no. 4 (February 2011): 971–74. http://dx.doi.org/10.1016/j.physe.2010.11.027.
Повний текст джерелаZhang, Changjin, and Yuheng Zhang. "Effects of Fe doping of La1.85Sr0.15CuO4." Journal of Physics: Condensed Matter 14, no. 41 (October 3, 2002): 9659–65. http://dx.doi.org/10.1088/0953-8984/14/41/321.
Повний текст джерелаPolyakov, A. Y., N. B. Smirnov, A. V. Govorkov, N. G. Kolin, D. I. Merkurisov, V. M. Boiko, A. V. Korulin, and S. J. Pearton. "Neutron transmutation doping effects in GaN." Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena 28, no. 3 (May 2010): 608–12. http://dx.doi.org/10.1116/1.3431083.
Повний текст джерелаGuan, Xiaoyu, Yong Zhao, and Xiaoqiu Jia. "Ni doping effects in YBa2Fe3O8+w." Journal of Modern Transportation 19, no. 4 (December 2011): 247–51. http://dx.doi.org/10.1007/bf03325765.
Повний текст джерелаMori, T., T. Shishido, and K. Nakajima. "Doping Effects in Rare-Earth Borides." Journal of Electronic Materials 38, no. 7 (February 18, 2009): 1098–103. http://dx.doi.org/10.1007/s11664-009-0683-9.
Повний текст джерелаDireksilp, Chatrawee, and Anuvat Sirivat. "Synthesis and Characterization of Hollow-Sphered Poly(N-methyaniline) for Enhanced Electrical Conductivity Based on the Anionic Surfactant Templates and Doping." Polymers 12, no. 5 (May 1, 2020): 1023. http://dx.doi.org/10.3390/polym12051023.
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