Готові списки джерел за темами / Doped/undoped Semiconductors

Добірка наукової літератури з теми "Doped/undoped Semiconductors"

Автор: Grafiati
Опубліковано: 7 вересня 2023

Оформте джерело за APA, MLA, Chicago, Harvard та іншими стилями

Оберіть тип джерела:

Зміст

Ознайомтеся зі списками актуальних статей, книг, дисертацій, тез та інших наукових джерел на тему "Doped/undoped Semiconductors".

Біля кожної праці в переліку літератури доступна кнопка «Додати до бібліографії». Скористайтеся нею – і ми автоматично оформимо бібліографічне посилання на обрану працю в потрібному вам стилі цитування: APA, MLA, «Гарвард», «Чикаго», «Ванкувер» тощо.

Також ви можете завантажити повний текст наукової публікації у форматі «.pdf» та прочитати онлайн анотацію до роботи, якщо відповідні параметри наявні в метаданих.

Статті в журналах з теми "Doped/undoped Semiconductors"

1

Yang, Jin-Peng, Hai-Tao Chen, and Gong-Bin Tang. "Modeling of thickness-dependent energy level alignment at organic and inorganic semiconductor interfaces." Journal of Applied Physics 131, no. 24 (June 28, 2022): 245501. http://dx.doi.org/10.1063/5.0096697.

Повний текст джерела
Анотація:
We identify a universality in the Fermi level change of Van der Waals interacting semiconductor interfaces. We show that the disappearing of quasi-Fermi level pinning at a certain thickness of semiconductor films for both intrinsic (undoped) and extrinsic (doped) semiconductors over a wide range of bulk systems including inorganic, organic, and even organic–inorganic hybridized semiconductors. The Fermi level ( EF) position located in the energy bandgap was dominated by not only the substrate work function (Φsub) but also the thickness of semiconductor films, in which the final EF shall be located at the position reflecting the thermal equilibrium of semiconductors themselves. Such universalities originate from the charge transfer between the substrate and semiconductor films after solving one-dimensional Poisson's equation. Our calculation resolves some of the conflicting results from experimental results determined by using ultraviolet photoelectron spectroscopy (UPS) and unifies the general rule on extracting EF positions in energy bandgaps from (i) inorganic semiconductors to organic semiconductors and (ii) intrinsic (undoped) to extrinsic (doped) semiconductors. Our findings shall provide a simple analytical scaling for obtaining the “quantitative energy diagram” in the real devices, thus paving the way for a fundamental understanding of interface physics and designing functional devices.
Стилі APA, Harvard, Vancouver, ISO та ін.
2

Sacco, Olga, Antonietta Mancuso, Vincenzo Venditto, Stefania Pragliola, and Vincenzo Vaiano. "Behavior of N-doped TiO2 and N-doped ZnO in Photocatalytic Azo Dye Degradation under UV and Visible Light Irradiation: A Preliminary Investigation." Catalysts 12, no. 10 (October 10, 2022): 1208. http://dx.doi.org/10.3390/catal12101208.

Повний текст джерела
Анотація:
N-doped TiO2 (N-TiO2) and N-doped ZnO (N-ZnO) were synthesized utilizing ammonia as a dopant source. The chemico-physical characteristics of synthesized samples were studied by Raman spectroscopy, X-ray diffraction, SEM analysis, N2 adsorption–desorption at −196 °C, and diffuse reflectance spectroscopy. Compared to undoped samples, the introduction of nitrogen in the semiconductor lattice resulted in a shift of band-gap energy to a lower value: 3.0 eV for N-ZnO and 2.35 eV for N-TiO2. The photocatalysts were tested for the degradation of Eriochrome Black T (EBT), which was selected as a model azo dye. Both N-doped semiconductors evidenced an improvement in photocatalytic activity under visible light irradiation (62% and 20% EBT discoloration for N-TiO2 and N-ZnO, respectively) in comparison with the undoped samples, which were inactive in the presence of visible light. Different behavior was observed under UV irradiation. Whereas N-TiO2 was more photoactive than commercial undoped TiO2, the introduction of nitrogen in ZnO wurtzite resulted in a drastic reduction in photocatalytic activity, with only 45% EBT discoloration compared to total color removal obtained with the commercial ZnO sample, suggesting intrinsic limitations for doping of this class of semiconductors.
Стилі APA, Harvard, Vancouver, ISO та ін.
3

Abdullahi, Sabiu Said, Garba Shehu Musa Galadanci, Norlaily Mohd Saiden, and Josephine Ying Chyi Liew. "Assessment of Magnetic Properties between Fe and Ni Doped ZnO Nanoparticles Synthesized by Microwave Assisted Synthesis Method." Solid State Phenomena 317 (May 2021): 119–24. http://dx.doi.org/10.4028/www.scientific.net/ssp.317.119.

Повний текст джерела
Анотація:
The emergence of Dilute Magnetic Semiconductors (DMS) with a potentials for spintronic application have attracted much researches attention, special consideration has been given to ZnO semiconductor material due to its wide band gap of 3.37 eV, large exciting binding energy of 60 meV, moreover, its ferromagnetic behavior at room temperature when doped with transition metals. MxZn1-xO (M = Fe or Ni) nanoparticles were synthesized by microwave assisted synthesis method calcined at 600°C. The structural, morphological and magnetic properties of these nanoparticles were studied using X-ray Diffraction (XRD), Field Emission Scanning Electron Microscopy (FESEM) and Vibrating Sample Magnetometer (VSM) respectively. Single phase Wurtzite hexagonal crystal structure was observed for the undoped and Fe doped ZnO nanoparticles with no any impurity, whereas Ni doped ZnO nanoparticles shows the formation of NiO impurities. The magnetic measurement reveals a diamagnetic behavior for the undoped ZnO meanwhile a clear room temperature ferromagnetism was observed for both Fe and Ni doped ZnO. Fe doped ZnO present a high saturation magnetization compared to Ni doped ZnO. However, Ni doped ZnO present high coercivity. The research was confirmed that Fe doped ZnO material will be good material combination for spintronic applications.
Стилі APA, Harvard, Vancouver, ISO та ін.
4

Sikam, Pornsawan, Ruhan Thirayatorn, Thanayut Kaewmaraya, Prasit Thongbai, Pairot Moontragoon, and Zoran Ikonic. "Improved Thermoelectric Properties of SrTiO3 via (La, Dy and N) Co-Doping: DFT Approach." Molecules 27, no. 22 (November 16, 2022): 7923. http://dx.doi.org/10.3390/molecules27227923.

Повний текст джерела
Анотація:
This work considers the enhancement of the thermoelectric figure of merit, ZT, of SrTiO3 (STO) semiconductors by (La, Dy and N) co-doping. We have focused on SrTiO3 because it is a semiconductor with a high Seebeck coefficient compared to that of metals. It is expected that SrTiO3 can provide a high power factor, because the capability of converting heat into electricity is proportional to the Seebeck coefficient squared. This research aims to improve the thermoelectric performance of SrTiO3 by replacing host atoms by La, Dy and N atoms based on a theoretical approach performed with the Vienna Ab Initio Simulation Package (VASP) code. Here, undoped SrTiO3, Sr0.875La0.125TiO3, Sr0.875Dy0.125TiO3, SrTiO2.958N0.042, Sr0.750La0.125Dy0.125TiO3 and Sr0.875La0.125TiO2.958N0.042 are studied to investigate the influence of La, Dy and N doping on the thermoelectric properties of the SrTiO3 semiconductor. The undoped and La-, Dy- and N-doped STO structures are optimized. Next, the density of states (DOS), band structures, Seebeck coefficient, electrical conductivity per relaxation time, thermal conductivity per relaxation time and figure of merit (ZT) of all the doped systems are studied. From first-principles calculations, STO exhibits a high Seebeck coefficient and high figure of merit. However, metal and nonmetal doping, i.e., (La, N) co-doping, can generate a figure of merit higher than that of undoped STO. Interestingly, La, Dy and N doping can significantly shift the Fermi level and change the DOS of SrTiO3 around the Fermi level, leading to very different thermoelectric properties than those of undoped SrTiO3. All doped systems considered here show greater electrical conductivity per relaxation time than undoped STO. In particular, (La, N) co-doped STO exhibits the highest ZT of 0.79 at 300 K, and still a high value of 0.77 at 1000 K, as well as high electrical conductivity per relaxation time. This renders it a viable candidate for high-temperature applications.
Стилі APA, Harvard, Vancouver, ISO та ін.
5

Hüsser, O. E., H. von Käanel, and F. Lévy. "Photoelectrochemistry of Doped and Undoped Semiconductors: A Comparison." Journal of The Electrochemical Society 132, no. 4 (April 1, 1985): 810–14. http://dx.doi.org/10.1149/1.2113963.

Повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
6

Heng, Chenglin, Xuan Wang, Chaonan Zhao, Gang Wu, Yanhui Lv, Hanchun Wu, Ming Zhao, and Terje G. Finstad. "Ultrathin Rare-Earth-Doped MoS2 Crystalline Films Prepared with Magnetron Sputtering and Ar + H2 Post-Annealing." Crystals 13, no. 2 (February 13, 2023): 308. http://dx.doi.org/10.3390/cryst13020308.

Повний текст джерела
Анотація:
In this work, we propose a method to prepare large-area, crystalline ultrathin rare-earth (RE, i.e., Eu, Yb, Er and Tb)-doped MoS2 thin films, using magnetron sputtering and subsequent Ar + H2 annealing. The film thickness of as-deposited samples varied from 60 to 100 nm, and decreases to be below 10 nm after annealing at 550 °C for 30 min. X-ray diffraction and Raman spectra analysis revealed that the sample films were crystallized after the annealing, which resulted in a MoS2 crystallite size of about 4–5 nm. X-ray photoelectron spectroscopy indicated that most of the RE ions existed in the films in trivalent states. The optical bandgap of the RE-doped MoS2 samples decreased from 1.6 eV (undoped) to 1.3 eV (Eu-doped) in the UV-vis absorption spectra. Electrical measurements showed that the electrical resistance decreased from 9.13 MΩ (undoped) to 0.34 MΩ (Yb-doped), the carrier density increased by one to two orders of magnitude and the carrier mobility decreased from 5.4 cm2/V·s (undoped) to 0.65 cm2/V·s (Yb-doped). The sign of the Hall coefficients indicated that the undoped MoS2 and the Yb-, Tb- and Er-doped MoS2 samples were n-type semiconductors, while the Eu-doped sample showed p-type characteristics. This study may be helpful to broaden the photoelectronic applications of these two-dimensional materials.
Стилі APA, Harvard, Vancouver, ISO та ін.
7

Wu, Meirong, Zhiqiang Wei, Wenhua Zhao, Xuan Wang, and Jinlong Jiang. "Optical and Magnetic Properties of Ni Doped ZnS Diluted Magnetic Semiconductors Synthesized by Hydrothermal Method." Journal of Nanomaterials 2017 (2017): 1–9. http://dx.doi.org/10.1155/2017/1603450.

Повний текст джерела
Анотація:
Diluted magnetic semiconductors Zn1-xNixS with different consistency ratio (x = 0, 0.01, 0.03, 0.05, and 0.07) were successfully synthesized by hydrothermal method using ethylenediamine as a modifier. The influence of Ni doping concentration on the microstructure, morphology, and optical and magnetic properties of undoped and Ni doped ZnS nanocrystals was characterized by X-ray diffraction (XRD), high-resolution transmission electron microscopy (HRTEM), X-ray energy dispersive spectrometry (XEDS), ultraviolet-visible spectroscopy (UV-vis), Fourier transform infrared spectroscopy (FT-IR), photoluminescence spectra (PL), and the vibrating sample magnetometer (VSM), respectively. The experiment results show the substitution of Ni2+ on Zn2+ sites without changing the hexagonal wurtzite structure of ZnS and generate single-phase Zn1-xNixS with good crystallization. The lattice constant causes distortion and decreases with the increase of Ni2+ doped concentration. The appearance of the samples is one-dimensional well-dispersed nanorods. UV-vis spectra reveal the band gap of all Zn1-xNixS samples greater than that of bulk ZnS (3.67 eV), and blue shift phenomenon occurs. The photoluminescence spectra of undoped and doped samples possess the broad blue emission band in the range of 400–650 nm; the PL intensities of Zn1-xNixS nanorods increase with the increase of Ni content comparing to pure ZnS and reach maximum for x = 0.03. Magnetic measurements indicated that the undoped ZnS samples are superparamagnetic, whereas the doped samples exhibit ferromagnetism.
Стилі APA, Harvard, Vancouver, ISO та ін.
8

Seyidov, MirHasan Yu, Faik A. Mikailzade, Rauf A. Suleymanov, Vafa B. Aliyeva, Tofig G. Mammadov, and Galib M. Sharifov. "Polarization switching in undoped and La-doped TlInS2 ferroelectric-semiconductors." Physica B: Condensed Matter 526 (December 2017): 45–53. http://dx.doi.org/10.1016/j.physb.2017.07.003.

Повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
9

Mittova, Irina Ya, Boris V. Sladkopevtsev, and Valentina O. Mittova. "Nanoscale semiconductor and dielectric films and magnetic nanocrystals – new directions of development of the scientific school of Ya. A. Ugai “Solid state chemistry and semiconductors”. Review." Kondensirovannye sredy i mezhfaznye granitsy = Condensed Matter and Interphases 23, no. 3 (August 17, 2021): 309–36. http://dx.doi.org/10.17308/kcmf.2021.23/3524.

Повний текст джерела
Анотація:
New directions of development of the scientific school of Yakov Aleksandrovich Ugai “Solid state chemistry and semiconductors” were considered for the direction “Study of semiconductors and nanostructured functional films based on them”, supervised by I. Ya. Mittova. The study of students and followers of the scientific school of Ya. A. Ugai cover materials science topics in the field of solid-state chemistry and inorganic and physical chemistry. At the present stage of research, the emphasis is being placed precisely on nanoscale objects, since in these objects the main mechanisms of modern solid-state chemistry are most clearly revealed: the methods of synthesis - composition - structure (degree of dispersion) - properties. Under the guidance of Professor I. Ya. Mittova DSc (Chem.), research in two key areas is conducted:“Nanoscale semiconductor and dielectric films” and “Doped and undoped nanocrystalline ferrites”. In the first area, the problem of creating high-quality semiconductor and dielectric nanoscale films on AIIIBV by the effect reasonably selected chemostimulators on the process of thermal oxidation of semiconductors and/or directed modification of the composition and properties of the films. They present the specific results achieved to date, reflecting the positive effect of chemostimulators and modifiers on the rate of formation of dielectric and semiconductor films of the nanoscale thickness range and their functional characteristics, which are promising for practical applications.Nanomaterials based on yttrium and lanthanum orthoferrites with a perovskite structure have unique magnetic, optical, and catalytic properties. The use of various approaches to their synthesis and doping allowing to control the structure and properties in a wide range. In the field of magnetic nanocrystals under the supervision of Prof. I. Ya. Mittova studies of the effect of a doping impurity on the composition, structure, and properties of nanoparticles of yttrium and lanthanum orthoferrites by replacing the Y(La)3+ and Fe3+ cations are carried out. In the Socialist Republic of Vietnam one of the talented students of Prof. I. Ya. Mittova, Nguyen Anh Tien, performs studies in this area. To date, new methods for the synthesis ofnanocrystals of doped and undoped ferrites, including ferrites of neodymium, praseodymium, holmium, etc. have been developed.
Стилі APA, Harvard, Vancouver, ISO та ін.
10

Williams, J. S., Y. Chen, J. Wong-Leung, A. Kerr, and M. V. Swain. "Ultra-micro-indentation of silicon and compound semiconductors with spherical indenters." Journal of Materials Research 14, no. 6 (June 1999): 2338–43. http://dx.doi.org/10.1557/jmr.1999.0310.

Повний текст джерела
Анотація:
Details of microindentation of silicon, such as the semiconductor-to-metal transformation, which takes place on loading, have been examined using spherical indenters. Various forms of silicon are studied, including heavily boron-doped wafers and silicon damaged and amorphized by ion implantation as well as material containing dislocations. Results indicate that only silicon, which contains high concentrations of point defects or is amorphous, exhibits mechanical properties that differ significantly from undoped, defect-free crystal. Amorphous silicon exhibits plastic flow under low indentation pressures and does not appear to undergo phase transformation on loading and unloading. Indentation of compound semiconductors is also studied and the load/unload behavior at room temperature is quite different from that of silicon. Both gallium arsenide and indium phosphide, for example, undergo slip-induced plasticity above a critical load.
Стилі APA, Harvard, Vancouver, ISO та ін.
Більше джерел

Дисертації з теми "Doped/undoped Semiconductors"

1

Lawless, Darren. "Photophysical studies on ultra-small semiconductor particles : CdS quantum dots, doped and undoped TiO₂2, and silver halides." Thesis, 1993. http://spectrum.library.concordia.ca/6080/1/NN84678.pdf.

Повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.

Частини книг з теми "Doped/undoped Semiconductors"

1

Tříska, Aleš, Jan Kočka, and Milan Vanĕček. "Density of Gap States in Undoped and Doped Amorphous Hydrogenated Silicon Obtained by Optical Spectroscopy." In Disordered Semiconductors, 459–68. Boston, MA: Springer US, 1987. http://dx.doi.org/10.1007/978-1-4613-1841-5_50.

Повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
2

Marzouki, Riadh. "The Cuprate Ln2CuO4 (Ln: Rare Earth): Synthesis, Crystallography, and Applications." In Crystal Growth - Technologies and Applications [Working Title]. IntechOpen, 2023. http://dx.doi.org/10.5772/intechopen.109193.

Повний текст джерела
Анотація:
This chapter is concerned with a study of undoped and doped cuprates of the general formula Ln2CuO4 (Ln = rare-earth metal) and Ln2–xMxCuO4±δ (Ln = rare earth and M = Sr, Ba, Ca, Ln’, Bi, and 3d metal). The crystal structures of the undoped and doped cuprates having the notations (T, T′, T*, S, and O), significantly depend, however, on the synthetic route. The topotactic synthesis is a specific method, which allows the transformation of the cuprate from the T to T′ structure. The importance of these materials originates from the discovery of the unconventional superconductors of the Ce-doped Ln2CuO4. The cuprate materials could function as insulators or semiconductors which are valuable tools in optoelectronic applications. The doped cuprate materials are good ionic conductors and are found useful as electrodes in fuel cell applications. The undoped cuprates reveal high dielectric properties.
Стилі APA, Harvard, Vancouver, ISO та ін.
3

Zhang, Jin Z., and Christian D. Grant. "OPTICAL AND DYNAMIC PROPERTIES OF UNDOPED AND DOPED SEMICONDUCTOR NANOSTRUCTURES." In Annual Review of Nano Research, 1–61. WORLD SCIENTIFIC, 2008. http://dx.doi.org/10.1142/9789812790248_0001.

Повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.

Тези доповідей конференцій з теми "Doped/undoped Semiconductors"

1

Tomimoto, Shinichi, Shinsuke Nozawa, Hiroyuki Kato, Michihiro Sano, Takahiro Matsumoto, Yasuaki Masumoto, Jisoon Ihm, and Hyeonsik Cheong. "Optical electron spin orientation in Ga-doped and undoped ZnO films." In PHYSICS OF SEMICONDUCTORS: 30th International Conference on the Physics of Semiconductors. AIP, 2011. http://dx.doi.org/10.1063/1.3666581.

Повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
2

Ikonnikov, A. V. "Cyclotron Resonance Study of Doped and Undoped InAs/AlSb QW Heterostructures." In PHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors - ICPS-27. AIP, 2005. http://dx.doi.org/10.1063/1.1994549.

Повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
3

Ozaki, N. "Magnetic Properties of undoped and N-doped Zn1−xCrxTe Grown by MBE." In PHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors - ICPS-27. AIP, 2005. http://dx.doi.org/10.1063/1.1994130.

Повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
4

Kudrawiec, R. "Photoreflectance Studies of Undoped and Si-doped AlGaN/GaN Heterostructures with a Two Dimensional Electron Gas." In PHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors - ICPS-27. AIP, 2005. http://dx.doi.org/10.1063/1.1994163.

Повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
5

Knox, Wayne H. "Femtosecond Nonlinear Optical Response of Modulation-Doped Quantum Wells." In Nonlinear Optical Properties of Materials. Washington, D.C.: Optica Publishing Group, 1988. http://dx.doi.org/10.1364/nlopm.1988.tub2.

Повний текст джерела
Анотація:
Modulation-doped quantum wells [1] offer a unique system to study femtosecond carrier interactions. Since the doping impurities are localized in the quantum well barriers, there is no contribution from impurity scattering when exciting carriers in the wells. In optical excitation experiments with semiconductors equal densities of electrons and holes are created. Therefore it is impossible to distinguish the separate effects of electrons and holes. Since in general the electrons and holes have different properties such as mass and phonon interactions we may expect that the scattering rates of electrons will be different than the holes. In addition, the separate contributions of the holes and electrons to the optical saturation signals have not been addressed before. We report new experiments [2] in which the femtosecond nonlinear optical response of modulation-doped quantum wells are studied for the first time and the results are compared to the previous results which have been obtained in undoped quantum wells.
Стилі APA, Harvard, Vancouver, ISO та ін.
6

Dubard, J., A. G. Cui, and Arthur L. Smirl. "Multiple-beam lensing and deflection of picosecond pulses in semiconductors." In OSA Annual Meeting. Washington, D.C.: Optica Publishing Group, 1989. http://dx.doi.org/10.1364/oam.1989.mv5.

Повний текст джерела
Анотація:
We investigate the lensing and deflection of a weak picosecond pulse by symmetric and asymmetric refractive index profiles induced in doped and undoped Si and GaAs by a second pulse. Here, two 30-ps pulses at a wavelength of 1.064 μm are incident on the surface of the sample with a small angle between the two beams and an adjustable time delay between the two pulses. The absorption of the first pulse (by single- or two-photon absorption) creates a symmetric or an asymmetric index profile. The second pulse is simultaneously or subsequently defocused and/or deflected as it propagates through the sample by the spatial index profile created by the first pulse. We discuss several geometries in which we use these effects to construct multiple-beam optical limiters, and we carefully compare the performance of these devices with more conventional singlebeam devices operated in similar conditions. Finally, we illustrate the use of these phenomena in multiple-beam geometries as spectroscopic tools for measuring the sign and magnitude of nonlinear refractive index changes. Again, we compare these multiple-beam spectroscopic techniques with their single-beam counterparts.
Стилі APA, Harvard, Vancouver, ISO та ін.
7

Klopf, J. Michael, John L. Hostetler, and Pamela M. Norris. "Transient Reflectance Response to Hot Electron Relaxation in InP Based Films." In ASME 2002 International Mechanical Engineering Congress and Exposition. ASMEDC, 2002. http://dx.doi.org/10.1115/imece2002-39625.

Повний текст джерела
Анотація:
Advancements in technologies related to thin film growth have led to astoundingly complex integrated photonic devices. The reliability of these devices relies upon the precise control of the band gap and absorption mechanisms in the thin film structures. Photon absorption in these devices can result in a reduction of laser efficiency as well as thermal runaway. To improve device performance prediction, an increased understanding of the localized absorption processes is paramount. A pump-probe technique is being developed to measure the transient absorption during hot carrier relaxation. This method relies upon the generation of hot carriers by the absorption of an intense ultrashort laser pulse. The change in reflectance due to hot carrier generation and relaxation is monitored using a probe pulse focused at the center of the excited region. The transient reflectance is measured as a function of the relative delay between the pump and probe pulses. Utilizing ultrashort laser pulses (τp ∼ 190 fs) it is possible to attain sub-picosecond resolution of the transient reflectance during hot carrier relaxation. Transient changes in the reflectance can then be related to transient changes in the absorption mechanisms of the film. Preliminary measurements made with this technique have shown clear differences in the transient reflectance of doped and undoped Indium Phosphide (InP) based films. This study will form the basis for development of a transient thermoreflectance model during hot carrier relaxation in III-V semiconductors.
Стилі APA, Harvard, Vancouver, ISO та ін.
8

Ashby, C. I. H., D. R. Neal, G. A. Vawter, and J. P. Hohimer. "Doped spin-on glass for integrated active waveguides." In OSA Annual Meeting. Washington, D.C.: Optica Publishing Group, 1992. http://dx.doi.org/10.1364/oam.1992.tuj5.

Повний текст джерела
Анотація:
Rare-earth-doped polysiloxane spin-on-glasses (SOG) are being investigated as new optical materials for forming active channel waveguides directly on semiconductor wafers (GaAs). Use of a SOG matrix for rare earth ions, such as Nd+3 and Er3+, permits direct integration of the active waveguide and a laser-diode pump source on the same semiconductor wafer. Inclusion of the polarizable rare-earth ions increases the refractive index of the doped SOG relative to undoped SOG; this permits one to use undoped SOG as a cladding layer between the doped SOG and the underlying III—V substrate. Materials preparation and optical properties, fabrication techniques, and the development of SOG channel waveguides will be presented.
Стилі APA, Harvard, Vancouver, ISO та ін.
9

Cheng, Li-Jen, Gregory Gheen, and Tsuen-Hsi Liu. "Spatial Light Modulation in GaAs." In Spatial Light Modulators and Applications. Washington, D.C.: Optica Publishing Group, 1988. http://dx.doi.org/10.1364/slma.1988.wc2.

Повний текст джерела
Анотація:
Gallium Arsenide (GaAs) is the most technologically-important compound semiconductor for electronics and optoelectronics. Semi-insulating Cr-doped and undoped GaAs crystals are known to be photorefractive.1,2 This provides opportunities to use GaAs for optical processing, including spatial light modulation. In this paper, we will present recent results of our investigation on the feasibility of using GaAs in this area.
Стилі APA, Harvard, Vancouver, ISO та ін.
10

Shakir, Sehar, and Hafiz M. Abd-ur-Rehman. "Enhancement in Photovoltaic Performance of Dye Sensitized Solar Cells Using Cu and Cu:Ag Co-Doped TiO2 Photoanode." In ASME 2016 Power Conference collocated with the ASME 2016 10th International Conference on Energy Sustainability and the ASME 2016 14th International Conference on Fuel Cell Science, Engineering and Technology. American Society of Mechanical Engineers, 2016. http://dx.doi.org/10.1115/power2016-59477.

Повний текст джерела
Анотація:
Dye Sensitized Solar Cells (DSSCs) are low cost solar cells offering big room for improvements in its photovoltaic performance by maneuvering semiconductor properties, dye adsorption, electrolyte stability etc. For the first time, we have co-doped TiO2 with silver (Ag) and copper (Cu) to enhance both charge collection and light absorption as well as reduce recombinations for DSSCs. For high solar cell efficiency 3wt% Cu and 3wt% Cu:Ag doped TiO2 nps were successfully prepared for Dye Sensitized Solar Cells (DSSCs). Modified photoanode was prepared using surface adsorbed N719 dye on doctor blade coated TiO2, Cu:TiO2 and Cu:Ag:TiO2 thin films. It was observed that optimum doping concentration of Cu and silver was 3wt% each. DSSCs with Cu:Ag:TiO2 thin film showed higher conversion efficiency under full sunlight illumination when compared to DSSCs assembled using Cu:TiO2 and undoped TiO2. The obtained efficiencies for DSSCs with undoped TiO2, Cu:TiO2 and Cu:Ag:TiO2 photoanodes were 2%, 2.7% and 4.5% respectively. Solar cells assembled with Cu only doped TiO2 electrode when compared with cells assembled using pristine TiO2, showed an increase in Voc while Jsc was decreased Furthermore, cells doped with both Ag and Cu showed enhancement in both Voc and Jsc. The enhancement in cell performance has been discussed in context of morphology, crystal phase, presence of bonds etc. in nanoparticles. Considering overall better performance, Cu:Ag doped TiO2 photoanodes can be considered as potential photoanodes in DSSCs.
Стилі APA, Harvard, Vancouver, ISO та ін.
Також вас можуть зацікавити розширені добірки на тему "Doped/undoped Semiconductors" для конкретних типів джерел:
Статті в журналах
Ми пропонуємо знижки на всі преміум-плани для авторів, чиї праці увійшли до тематичних добірок літератури. Зв'яжіться з нами, щоб отримати унікальний промокод!

До бібліографії