Дисертації з теми "DltX"
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Kamar, Rita. "Mécanismes de résistance aux peptides antimicrobiens chez Bacillus thuringiensis : rôle de dltX dans la D-alanylation des acides téichoïques." Electronic Thesis or Diss., Paris, AgroParisTech, 2014. http://www.theses.fr/2014AGPT0029.
Повний текст джерелаThe Bacillus cereus pathogenic spectrum ranges from strains used as probiotics to human-lethal strains (causing gastrointestinal disorders or local and severe systemic infections). However, prediction of the pathogenic potential of a strain remains difficult. In this work, we studied different phenotypes of colonization/adaptation to the host (adhesion, cytotoxicity, motility, biofilm formation, resistance to antimicrobial peptides and virulence), analyzing the correlation between these phenotypes and human disease in a collection of strains representative of the pathological diversity of B. cereus in humans. Statistical analysis revealed correlations between several phenotypes, and principal component analysis grouped the strains into two distinct subpopulations. We found that strains differed in pathogenic potential and that virulent strains could be differentiated from non-pathogenic strains. We believe that these findings will facilitate the identification of a phenotype or a combination of phenotypes of potential use in the development of effective prevention strategies and/or diagnostic tools for distinguishing between pathogenic and non-pathogenic B. cereus strains. Our result suggests that B. cereus is not an exclusively opportunistic pathogen and could instead be considered a real pathogen per se. However, virulence is a multifactorial phenomenon involving numerous factors from both the host and the invading pathogen. As cationic antimicrobial peptides (CAMPs) are the primary defense mechanism against invading organisms, virulence of pathogens like B. cereus requires bacterial resistance to such compounds. Consequently, many pathogens have developed resistance strategies involving the reduction of the cell envelope negative charge, thereby influencing the binding and interaction of these CAMPs. The incorporation of Dalanine esters into teichoic acids (TAs) represents one of the most common bacterial resistance mechanisms that depend on such charge modifications. That D-alanylation process is accomplished by the gene products of an operon containing five genes, dltXABCD, that is highly conserved among nearly all gram-positive bacteria. The small first ORF, dltX, encodes a protein of unknown function. The aim of the other part of this work was then to establish whether this protein is involved in the D-alanylation process in Bacillus thuringiensis. We therefore constructed an in frame deletion mutant of dltX, without affecting the expression of the other genes of the operon. The growth characteristics of the dltX mutant and those of the wild type strain were similar under standard in vitro conditions. However disruption of dltX drastically impaired the resistance of B. thuringiensis to CAMPs and significantly attenuated its virulence in two insect species: Galleria mellonella and Drosophila melanogaster. Moreover, HPLC studies showed the dltX mutant was devoid of D-alanine, and electrophoretic mobility measurements indicated that the cells carried a higher negative surface charge. Scanning electron microscopy experiments showed morphological alterations of these mutant bacteria, suggesting that depletion of D-alanine from TAs affects cell wall structure. Our findings suggest that DltX is essential for the incorporation of D-alanyl esters into teichoic acids. Moreover, we found that DltX does not affect the expression of the operon. We therefore conclude that dltX is translated into a functional protein that plays a direct biosynthetic, transport or addresser role. Altogether, our results clearly indicate that DltX plays a direct role in the resistance to CAMPs, thus contributing to the survival and virulence of B. thuringiensis in insects. The exact function of that protein remains to be elucidated. This work is the first report examining the involvement of dltX in the Dalanylation of TAs
Pfennig, Sabrina [Verfasser], Milton T. [Akademischer Betreuer] Stubbs, Ralph P. [Akademischer Betreuer] Golbik, and Norbert [Akademischer Betreuer] Sträter. "Strukturelle und thermodynamische Charakterisierung der DltA-DltC-Interaktion und kinetische Analyse der DltA katalysierten D-Alanylierung des DltC / Sabrina Pfennig. Betreuer: Milton T. Stubbs ; Ralph P. Golbik ; Norbert Sträter." Halle, Saale : Universitäts- und Landesbibliothek Sachsen-Anhalt, 2015. http://d-nb.info/1073150704/34.
Повний текст джерелаAllen, Darin. "Transcriptional regulation of the dlt operon in Enterococcus faecalis and further characterization of a dlta mutant." Thesis, Manhattan, Kan. : Kansas State University, 2008. http://hdl.handle.net/2097/783.
Повний текст джерелаZimmermann, Stephan [Verfasser], Milton T. [Akademischer Betreuer] Stubbs, J. [Akademischer Betreuer] Balbach, and H. D. [Akademischer Betreuer] Mootz. "Strukturelle Untersuchungen der Wechselwirkungen zwischen DltA und DltC / Stephan Zimmermann. Betreuer: Milton T. Stubbs ; J. Balbach ; H. D. Mootz." Halle, Saale : Universitäts- und Landesbibliothek Sachsen-Anhalt, 2011. http://d-nb.info/1025231376/34.
Повний текст джерелаGurimskaya, Yana. "Comportement de quelques impuretés métalliques dans le germanium : une étude par les techniques capacitives DLTS-MCTS-LAPLACE DLTS." Phd thesis, Université de Strasbourg, 2012. http://tel.archives-ouvertes.fr/tel-00734375.
Повний текст джерелаDjebbar, El-hocine. "A DLTS study of copper indium diselenide." Thesis, University of Salford, 1998. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.391312.
Повний текст джерелаMarklund, Daniel. "Control of a high temperature DLTS setup." Thesis, Uppsala universitet, Institutionen för teknikvetenskaper, 2017. http://urn.kb.se/resolve?urn=urn:nbn:se:uu:diva-328710.
Повний текст джерелаJin, Gongjiu. "DLTS studies of surface state effects in GaAsFETs." Thesis, Lancaster University, 1991. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.316292.
Повний текст джерелаTabata, Americo Sheitiro. "Estudo de níveis profundos em GaAs usando DLTS." [s.n.], 1988. http://repositorio.unicamp.br/jspui/handle/REPOSIP/278298.
Повний текст джерелаDissertação (mestrado) - Universidade Estadual de Campinas, Instituto de Fisica Gleb Wataghin
Made available in DSpace on 2018-07-17T14:01:56Z (GMT). No. of bitstreams: 1 Tabata_AmericoSheitiro_M.pdf: 727451 bytes, checksum: 6f553ad446b36fbefaabb37c21ce3d4a (MD5) Previous issue date: 1988
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Abstract: Not informed.
Mestrado
Física
Mestre em Física
Hellig, Kay. "Untersuchung tiefer Störstellen in Zinkselenid." [S.l. : s.n.], 1997. http://www.bsz-bw.de/cgi-bin/xvms.cgi?SWB10324521.
Повний текст джерелаNyamhere, Cloud. "Characterization of process and radiation induced defects in Si and Ge using conventional deep level transient spectroscopy (DLTS) and Laplace-DLTS /." Access to E-Thesis, 2009. http://upetd.up.ac.za/thesis/available/etd-02022010-134937/.
Повний текст джерелаStübner, Ronald. "Electrical characterization of carbon-hydrogen complexes in silicon and silicon-germanium alloys." Doctoral thesis, Saechsische Landesbibliothek- Staats- und Universitaetsbibliothek Dresden, 2018. http://nbn-resolving.de/urn:nbn:de:bsz:14-qucosa-233055.
Повний текст джерелаIn dieser Arbeit werden die elektrischen Eigenschaften von Kohlenstoff-Wasserstoff-Komplexen in Silizium (Si) und Silizium-Germanium-Legierungen (SiGe) studiert. Diese Komplexe bilden sich durch Reaktion von Kohlenstoff-Verunreinigungen mit Wasserstoff, welcher durch nasschemisches Ätzen oder eine Wasserstoffplasma-Behandlung eingebracht wird. Der Nachweis und die Charakterisierung der Defekte erfolgte mit den Methoden der Kapazitätstransientenspektroskopie (DLTS), Laplace DLTS und der Minoritätsladungsträgertransientenspektroskopie (MCTS). Damit wurden Eigenschaften wie die Aktivierungsenergie der Ladungsträgeremission, die Einfangquerschnitte, der Ladungszustand und die thermische Stabilität der Komplexe bestimmt. Die Zusammensetzung der Komplexe wurde durch eine Analyse der Tiefenprofile ermittelt, welche in Proben mit verschiedenen Verunreinigungskonzentrationen gemessen wurden. Mit diesen Methoden wurde acht Kohlenstoff-Wasserstoff-korrelierte Defektniveaus (E42, E65, E75, E90', E90, E262, H50, H180) in Si und SiGe und ein Wasserstoff-korreliertes Niveau in Ge nachgewiesen. Eine Wasserstoffplasma-Behandlung bei Temperaturen um 373 K erzeugt vier dominante Defektniveaus in Si bei Ec-0.06 eV (E42), Ec-0.52 eV (E262), Ev+0.33 eV (H180) und Ev+0.08 eV. Es wird gezeigt, dass E42 und E262 zwei Ladungszustände desselben Defektes sind. Die charakteristische Feldabhängigkeit der Emissionsrate zeigt, dass E42 der Doppel-Akzeptor- und E262 der Einfach-Akzeptor-Zustand eines CH-Komplexes ist. Durch Vergleich der beobachteten Eigenschaften mit theoretischen Berechnungen werden beide Niveaus der antibindenden Konfiguration des CH-Komplexes (CH_1AB) zugeordnet. Das Niveau H180 wurde in der Literatur bisher mit dem Donator-Zustand der CH_1AB-Konfiguration in Verbindung gebracht. Diese Hypothese konnte nicht bestätigt werden. Es wird gezeigt, dass H180 eine Barriere für den Löchereinfang von etwa 53 meV besitzt, was die Bestimmung des Ladungszustandes aus der Feldabhängigkeit der Emissionsrate erschwert. Die Aktivierungsenergie von H180 stimmt jedoch befriedigend mit der berechneten Aktivierungsenergie des Akzeptorzustandes der CH_T-Konfiguration überein, bei der H auf der T-Zwischengitterposition sitzt. Daher wird H180 vorläufig dem CH_T-Komplex zugeordnet. Das Niveau H50, welches zum ersten Mal hier beschrieben wird, wird nur mit sehr geringen Konzentrationen nachgewiesen. Dies erschwert die Bestimmung des Ladungszustandes. Die Aktivierungsenergie von H50 stimmt jedoch auffallend gut mit dem von der Theorie vorhergesagten Akzeptorniveau von CH_2AB (Ev+0.07 eV) überein. Daher wird H50 vorrübergehend CH_2AB zugeordnet. Das Einbringen von Wasserstoff in Silizium durch nasschemisches Ätzen führt zu drei dominanten Defektniveaus bei Ec-0.11 eV (E65), Ec-0.13 eV (E75) und Ec-0.16 eV (E90). E90 wurde bisher widersprüchlich von verschiedenen Autoren dem Donatorzustand und dem Akzeptorzustand der bindungszentrierten Konfiguration (CH_1BC) des CH-Komplexes zugeordnet. Dieser Widerspruch konnte aufgelöst werden. Es wird gezeigt, dass in Silizium mit niedrigem Sauerstoffanteil (< 1E17 cm^-3) zwei verschiedene Defektniveaus (E90 und E90') bei etwa 90 K in den DLTS-Spektren erscheinen, welche nur mit der Laplace DLTS-Technik aufgelöst werden können. Der Akzeptorzustand der CH_1BC-Konfiguration kann direkt nach nasschemischem Ätzen oder einer Wasserstoffplasma-Behandlung bei 373 K beobachtet werden. Im Gegensatz dazu wird durch eine Sperrspannungs-Temperung in Proben mit einer Donatorkonzentration von Nd > 1E15 cm^-3 der Donatorzustand eines CH_n-Komplexes (E90', Ec-0.14 eV), welcher mehr als ein Wasserstoffatom enthält, gebildet. Durch Vergleich mit theoretischen Berechnungen wird n > 2 geschlussfolgert. Die Niveaus E65 und E75 sind in Proben mit einem hohen Sauerstoffanteil (> 1E17 cm^-3) dominant. Beide Niveaus gehören zu einer durch ein O-Atom verzerrten CH_1BC-Konfiguration. Das Auftreten von zwei Niveaus wird durch zwei nicht-äquivalente Positionen des O-Atoms bezüglich der CH-Bindung erklärt. Die Eigenschaften von E42, E90, E262 und H180 wurden ebenfalls in verdünnten SiGe-Legierungen untersucht. Es wird gezeigt, dass Ge-Atome in der direkten Umgebung der Defekte zusätzliche Defektniveaus erzeugen, die in der Bandlücke nahe zu den Si-Defektniveaus liegen und von durch Ge-Atomen verzerrten Defekten stammen. Die beobachteten relativen Konzentrationen dieser Ge-korrelierten Niveaus kann mit Modellen der atomaren Struktur der Defekte erklärt werden. Eine Verschiebung der Defektniveaus proportional zum Ge-Anteil in der Legierung wurde beobachtet. Eine Extrapolation dieser Verschiebung legt den Schluss nahe, dass E90 und E262 auch in reinem Ge beobachtbar sein sollten. Tatsächlich wurde ein Wasserstoff-korrelierter Defekt E150 (Ec-0.31 eV) in n-Typ Germanium beobachtet. Die Konzentration von E150 ist nach einer Wasserstoffplasma-Behandlung wesentlich höher als nach nasschemischen Ätzen. Es wird gezeigt, dass E150 ein einzelnes Wasserstoffatom und ein noch unbekanntes Verunreinigungsatom enthält, höchstwahrscheinlich Kohlenstoff, Sauerstoff oder Silizium. Damit ist E150 ein sehr wahrscheinlicher Kandidat für einen CH-Komplex in Germanium
Morselli, Enrico. "Radix DLT: un'alternativa scalabile alle Blockchain." Bachelor's thesis, Alma Mater Studiorum - Università di Bologna, 2020.
Знайти повний текст джерелаSchlenker, Thomas. "Redesign eines DLX-Prozessormodells mit Pipeline." [S.l.] : Universität Stuttgart , Fakultät Informatik, 1998. http://www.bsz-bw.de/cgi-bin/xvms.cgi?SWB6783562.
Повний текст джерелаBains, S. K. "DLTS and A.C. hopping conductivity studies on electron irradiated silicon." Thesis, University of Reading, 1985. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.356128.
Повний текст джерелаNavet, Benjamin. "Homéogènes Dlx, signalisation RANK/RANKL et ostéosarcomes." Thesis, Nantes, 2016. http://www.theses.fr/2016NANT1018/document.
Повний текст джерелаOsteosarcoma (OS), the most common malignant primary bone tumor, is characterized by an osteoid formation occasionally associated with osteolysis. De-spite therapeutic advances, the 5-years survival rate remains low (30% in case of metastasis or drug-resistance). New therapeutic approaches targeting the tumor cell and its environment are needed. Presented studies focused on potential pro-tumor factors namely Dlx genes and a key signaling pathway of the bone environment (RANKL / RANK) that may influence tumor aggressiveness. The OS is an osteo-blastic tumor and Dlx family was chosen due to its in-volvement in osteoblastogenesis. RANKL / RANK path-way was selected as it constitutes a main element in the coupling between osteoblasts and osteoclasts. A link between Dlx genes and RANK signaling was suspected. Dlx1, Dlx4 and Rank genes are not normally ex-pressed in osteoblasts but are present in the OS cell lines. Dlx and Rank expression modulations were real-ized to assess the impact on tumor cells. RANK / RANKL signaling involvement in the tumor microenvi-ronment was analyzed. Disruption of remodeling is in favor of the tumor taking part in the establishment of a vicious circle between tumor and environment. This work established the involvement of Dlx, espe-cially DLX4 to which a new coding transcript has been characterized. However, additional studies are needed. Regarding the RANK / RANKL signaling, it turns out that beyond the vicious circle, leading to tumor initiation stage, the RANK expression by the tumor proves to be pro-metastatic elements
Iaconianni, Sara. "Caratterizzazione di dispositivi a giunzione tramite Deep Level Transient Spectroscopy (DLTS)." Master's thesis, Alma Mater Studiorum - Università di Bologna, 2017. http://amslaurea.unibo.it/14216/.
Повний текст джерелаShi, Yi. "An investigation of defects in gallium arsenide using the DLTS technique." Thesis, University of British Columbia, 1989. http://hdl.handle.net/2429/28061.
Повний текст джерелаApplied Science, Faculty of
Electrical and Computer Engineering, Department of
Graduate
Jansson, Rasmus. "Completion of the software required for a high-temperature DLTS setup." Thesis, Uppsala universitet, Institutionen för teknikvetenskaper, 2013. http://urn.kb.se/resolve?urn=urn:nbn:se:uu:diva-205076.
Повний текст джерелаDLTS investigation of wide bandgap materials
Diamond electronics
Hartnett, S. J. "Uniaxial stress/DLTS studies on deep level defects in n-GaAs." Thesis, University of Sussex, 1997. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.361362.
Повний текст джерелаMa, Wenqian. "Dlx Gene Regulation of Zebrafish GABAergic Interneuron Development." Thèse, Université d'Ottawa / University of Ottawa, 2011. http://hdl.handle.net/10393/19970.
Повний текст джерелаAbboud, Nadine. "Etude et caractérisation des structures à base du silicium." Thesis, Montpellier 2, 2011. http://www.theses.fr/2011MON20103/document.
Повний текст джерелаThe aim of this work is to study and characterize silicon based structures. The first part of this thesis deals with the operation of VDMOSFET power devices under extreme conditions. The electrical behavior of studied devices and the evolution of switching times were studied as a function of temperature (25 to 180ºC). Electrical stressing was applied in order to simulate real operating conditions. Defects are then characterized by gate-source capacitance and conductance measurements allowing the calculation of interface states densities induced by stress. Experimental results show that interface states densities increase with the stress duration. Defects induced and activated by the electrical stress are also studied by the CDLTS technique based on gate pulse width scan. The band gap was scanned by varying the pulse base level. Different defects were detected and we have distinguished the doping levels and interface states from deep levels located in the forbidden band gap. The second part of the thesis concerns the characterization and modeling of boron-doped emitter photovoltaic cells. The electrical characterization was carried out by SIMS characterization and the measurement of C(V) and I(V) characteristics. Experimental results are supported by modeling in order to estimate all the characteristic parameters of the studied cell. By the DLTS technique, a trap with activation energy of 0.029 eV and capture cross section of 1.41 10-24 cm2 has been identified
Meyer, Walter Ernst. "Digital DLTS studies on radiation induced defects in Si, GaAs and GaN." Pretoria : [s.n.], 2006. http://upetd.up.ac.za/thesis/available/etd-06182007-143820.
Повний текст джерелаMari, Ruaz Hussain. "DLTS characterisation of defects in III-V compound semiconductors grown by MBE." Thesis, University of Nottingham, 2011. http://eprints.nottingham.ac.uk/14211/.
Повний текст джерелаThienprasit, Jeanne A. (Jeanne Athya). "DLTS characterization of aluminum gettering of iron contaminants in boron-doped silicon." Thesis, Massachusetts Institute of Technology, 1996. http://hdl.handle.net/1721.1/10613.
Повний текст джерелаLeonard, Simon. "An investigation into metallic impurities in silicon for solar cells." Thesis, University of Manchester, 2015. https://www.research.manchester.ac.uk/portal/en/theses/an-investigation-into-metallic-impurities-in-silicon-for-solar-cells(4519e1a6-56bc-47ee-ac13-9459470a86ac).html.
Повний текст джерелаCanimoglu, A. "Studies of lattice defects in as-grown and irradiated n-InP." Thesis, University of Sussex, 1998. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.264561.
Повний текст джерелаChartrand, Nathalie. "Functional analysis of Dlx homeodomain proteins from the zebrafish." Thesis, National Library of Canada = Bibliothèque nationale du Canada, 2000. http://www.collectionscanada.ca/obj/s4/f2/dsk1/tape2/PQDD_0018/MQ48141.pdf.
Повний текст джерелаEsau, Crystal. "Characterization of the Dlx Enhancers in the Developing Mouse." Thèse, Université d'Ottawa / University of Ottawa, 2013. http://hdl.handle.net/10393/30201.
Повний текст джерелаEl, Bouabdellati Mohamed. "Etude par spectroscopie DLTS des structures formées sur InP(n) par oxydation plasma." Metz, 1994. http://docnum.univ-lorraine.fr/public/UPV-M/Theses/1994/El_Bouabdellati.Mohamed.SMZ9464.pdf.
Повний текст джерелаThe topic of this thesis was the study of Schottky and oxided Schottky diodes formes on n-InP substrate. The passivation process used was the oxidation in plasma environment, we distinguish principally two cases : 1°) oxidation in multipolar plasma using two types of excitation : i) hot cathode excitation ; ii) microwave excitation (ECR). 2°) oxidation downstream the RF plasma region under and without illumination. This study leads to investigate the enrgy distribution of defects, their localisation at the interface between InP and its native oxide, inside the oxide or in the bulk of the semiconductor. DLTS spectra measured on all strucutres shows a wide peak at room temperature. Some anomalies appears on these spectra. Two methods were used to explain these anomalies : i) a two components model ; ii)a single component model which takes into account the leakage current and the variation of the capture cross sections
EL, BOUABDELLATI MOHAMED LEPLEY B. "ETUDE PAR SPECTROSCOPIE DLTS DES STRUCTURES FORMEES SUR INP(N) PAR OXYDATION PLASMA /." [S.l.] : [s.n.], 1994. ftp://ftp.scd.univ-metz.fr/pub/Theses/1994/El_Bouabdellati.Mohamed.SMZ9464.pdf.
Повний текст джерелаMalonis, Andrew C. "Quantitative defect spectroscopy on operating AlGaN/GaN high electron mobility transistors." The Ohio State University, 2009. http://rave.ohiolink.edu/etdc/view?acc_num=osu1259597046.
Повний текст джерелаZhao, Pengcheng. "Phenotype Characterization of Mice with Targeted Deletions of Dlx Enhancers." Thesis, Université d'Ottawa / University of Ottawa, 2017. http://hdl.handle.net/10393/36904.
Повний текст джерелаBurton, Lindsay. "Dlx regulation in zebrafish brain development via I56iI56ii and I12aI12b." Thesis, University of Ottawa (Canada), 2008. http://hdl.handle.net/10393/27754.
Повний текст джерелаThames, Fred. "A NEW GENERATION OF DATA RECORDERS BASED ON DLT TECHNOLOGY." International Foundation for Telemetering, 1998. http://hdl.handle.net/10150/607371.
Повний текст джерелаAs the performance of inexpensive commercial off-the-shelf (COTS) data storage devices continues to increase, the temptation to use them as the basis for data capture products for military and industrial applications becomes ever more compelling. For example, the Digital Linear Tape (DLT) format now offers a 270 Gigabits per cassette capacity at a sustained transfer rate of 40 Mbits/s – performance which would have cost tens or even hundreds of thousands of dollars per system just a few years ago. But to transplant such a device from its benign office habitat into a data capture product which will function reliably and consistently in a wide range of field and platform environments is an engineering task fully as difficult and complex as designing an environmentally robust recorder from scratch. This paper discusses the problems which typically have to be overcome; environmental protection, reliability, data integrity, power supplies, software issues, control and data interfacing, etc., citing practical examples of analog and digital DLT-based data recorders which are now entering service for telemetry, intelligence gathering, anti-submarine warfare and related applications
Debiasi, Paula. "Ortorretificação de imagens CCD CBERS 2 atravás da transformação DLT." reponame:Biblioteca Digital de Teses e Dissertações da UFRGS, 2008. http://hdl.handle.net/10183/13763.
Повний текст джерелаThis work evaluates the orthoimages generation potentiality of the CCD sensor from the CBERS 2, by using a generalized mathematical model, say, the “Direct Linear Transformation (DLT)”. The transformation model was implemented by the pos graduated students from the Federal University of Paraná using the Delphi 4.0 language, and in this task an utilitarian software to adapt the Digital Elevation Model (DEM) from the Shuttle Radar Topography Mission (SRTM) function, on the program was produced. The land area surface used for trial is localized at the Paraná Oriental Centre and comprising the Guartelá canyon, varies in shape from an irregular to a plane embossment where variations up to 700m in height are found.Two DEM sources of altimetry information data for the orthoimages generations were used: The first generated from SRTM mission and the another one developed from contour lines and topographic points counted in a 1:50.000 scale. A orthorretification process, of a cutting out scene from the CBERS, was realized utilizing both MDE´s. The images were analyzed by statistics inferences and classified according to the Padrão de Exatidão Cartográfica (PEC) using check points. To evaluate the CCD CBERS 2 scene orthorefications necessity, the same cutting out was also object of geometric corrections having a second degree polynomial as a tool. The planimetrics residues generated by the second degree polynomial simplified corrections were just enough to demonstrate the necessity of the orthoretification process, it is, corrections of errors due to the embossment topography at the considered scene. The comparison of the images produced by the differents DEM´s demonstrate that the utilization of the DEM from the SRTM is a satisfactory tool for images orthoretifications of the CBERS 2.
Weinschutz, Mendes Hellen. "Dlx Genes, Neurogenesis and Regeneration in the Adult Zebrafish Brain." Thesis, Université d'Ottawa / University of Ottawa, 2020. http://hdl.handle.net/10393/40047.
Повний текст джерелаPellegrino, Paolo. "Point Defects in Silicon and Silicon-Carbide." Doctoral thesis, KTH, Microelectronics and Information Technology, IMIT, 2001. http://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-3133.
Повний текст джерелаNouaille, Sébastien. "Facteurs d'hôtes influençant la sécrétion de protéines hétérologues chez Lactococcus lactis." Paris 11, 2003. http://www.theses.fr/2003PA112064.
Повний текст джерелаLactic acid bacteria (LAB) are Gram-positive bacteria generally considered as safe (GRAS) and they are therefore excellent potential candidates for the development of new uses such as live vectors for the delivery of immunogenic proteins. To this purpose, secretion of heterologous proteins could be more advantageous than cytoplasmic production. We studied the heterologous protein secretion in Lactococcus lactis with the staphylococcal nuclease (Nuc) as secretory model protein. By the use of a lactococcal signal peptide to drive Nuc secretion and a synthetic propeptide to maintain an optimal charge balance at the N-terminal end of Nuc, the Nuc secretion efficiency was strongly improved. To better understand secretion, we identified by random insertional mutagenesis two new host factors indirectly involved in secretion. Inactivation of dltA unbalances charges present at the cell surface and leads to Nuc entrapment into the cell wall. Inactivation of ybdD up-regulates expression of several genes of which products might control secretion in L. Lactis. The analysis of the so-called secretome in L. Lactis reveals that all components of the Sec machinery are present except SecDF. In B. Subtilis, SecDF is necessary in late secretion stages. Introduction of SecDF from B. Subtilis into the L. Lactis secretome improves secretion of several heterologous proteins. To evaluate the potential use of L. Lactis as vector of an allergen to trigger an immune response in mice, we developed L. Lactis strains secreting a fusion between Nuc and an immunogenic epitope of β-lactoglobulin (Blg). Blg is the major cow milk allergen in childhood and a good model for study of food allergy. Oral administration of L. Lactis secreting this fusion protein triggers a specific mucosal immune and non allergic type response in mice, against both the epitope and the entire Blg
Paez-Sierra, Beynor Antonio. "Raman spectroscopy of metal-organic-inorganic heterostructures and pentacene-based OFETs." [S.l. : s.n.], 2008.
Знайти повний текст джерелаKuang, Li-chao. "Deep-level transient spectroscopy, DLTS, for the determination of trap parameters in semiconductor devices." Thesis, National Library of Canada = Bibliothèque nationale du Canada, 1997. http://www.collectionscanada.ca/obj/s4/f2/dsk3/ftp04/mq23373.pdf.
Повний текст джерелаChen, Peter. "Investigation of ZnO / CdS / CuInSe2 solar cells using a custom built I-DLTS system." Thesis, McGill University, 2013. http://digitool.Library.McGill.CA:80/R/?func=dbin-jump-full&object_id=116990.
Повний текст джерелаCette thèse a pour but d'examiner les principes et la théorie derrière la spectroscopie des niveaux profonds (DLTS: Deep Level Transient Spectroscopy). Différentes méthodes et techniques DLTS sont étudiées pour déterminer la possibilité de concevoir un system DLTS économique en utilisant du matériel informatique moderne d'acquisition de données (DAQ: Data Acquisition). Une technique de courant isothermique DLTS (I-DLTS) a été choisie pour sa simplicité d'implémentation. Le système final a été testé en utilisant des cellules solaires ZnO/CdS/CuInSe2 fabriquées en laboratoire pendant cette étude. La caractérisation de ces cellules solaires a aussi été investigué en utilisant des techniques courant-tension et capacité-tension pour démontrer l'existence des niveaux profonds et de déterminer les paramètres primaires nécessaires au calculs d'I-DLTS. Des niveaux profonds avec activation d'énergies entre 0.16 eV à 0.28 eV ainsi qu'entre 0.35 eV et 0.38 eV ont été découverts.
Fazel, Darbandi Siavash. "Functional Analysis of Dlx Intergenic Enhancers in the Developing Mouse Forebrain." Thèse, Université d'Ottawa / University of Ottawa, 2014. http://hdl.handle.net/10393/31079.
Повний текст джерелаJowett, Simon. "A novel photogrammetric technique using DLT to measure golf shaft dynamics." Thesis, University of Nottingham, 2002. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.272754.
Повний текст джерелаSTEINER, BENEDIKT, and VINCENT NEIDLINGER. "Impact of the Distributed Ledger Technology (DLT) IOTA on Smart Cities." Thesis, KTH, Skolan för industriell teknik och management (ITM), 2021. http://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-301276.
Повний текст джерелаI den här artikeln analyseras effekterna av IOTA:s teknik för distribuerade huvudböcker (DLT) på smarta städer. Världens befolkning ökar snabbt samtidigt som trender som urbanisering formar framtidens demografi. Snabbt växande städer står därför inför utmaningen att öka kraven på resurser som energi, vatten och transporter, samtidigt som de strävar efter att öka livskvaliteten genom att minska belastningar som föroreningar och avfall. Begreppet smart stad uppstod med ambitionen att lösa stadensproblem genom att skapa sociala och ekonomiska fördelar och samtidigt tillhandahålla effektiva processer för resursfördelning. Den nuvarande informations- och kommunikationstekniken tenderar dock att inte uppfylla kraven på system för smarta städer, eftersom mängden anslutna enheter ökar, vilket gör att övergången till en smart stad blir långsammare. Den distribuerade huvudbokstekniken IOTA lovar att möjliggöra automatiserade, felfria transaktioner och processer med en hög grad av integritet, vilket kan påverka utvecklingen av smarta städer. I den här forskningen introduceras och undersöks IOTA-tekniken. Fördelarna med IOTA jämfört med konventionell informationskommunikationsteknik och blockkedjetekniken lyfts fram. Därefter granskas det nuvarande läget för IOTA i smarta städer genom att analysera aktuell forskning och användningsfall. För att undersöka begreppet smart stad introduceras ramverket för initiativet för smarta städer, inklusive dess underkategorier. Dessutom intervjuades olika experter som arbetar med IOTA-integrationer isamband med initiativ för smarta städer för att ge en inblick i deras expertisområde. Slutligen analyseras och diskuteras IOTA-teknikens användningsområden i förhållande till ramverket för flernivåperspektivet (Geels, 2006), där IOTA:s positiva inverkan på utvecklingen av smarta städer lyfts fram.
TELIA, AZZEDINE LEPLEY BERNARD. "ETUDE PAR SPECTROSCOPIE DLTS DES TRANSITOIRES DE CAPACITE SUR LES INTERFACES OXYDES NATIFS (N) INP /." [S.l.] : [s.n.], 1990. ftp://ftp.scd.univ-metz.fr/pub/Theses/1990/Telia.Azzedine.SMZ9012.pdf.
Повний текст джерелаPollack, Jacob N. "Activity of Dlx Transcription Factors in Regulatory Cascades Underlying Vertebrate Forebrain Development." Thèse, Université d'Ottawa / University of Ottawa, 2013. http://hdl.handle.net/10393/23655.
Повний текст джерелаChoudhury, Anuradha. "The regulation and function of DLX genes in the first branchial arch." Thesis, King's College London (University of London), 2005. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.420629.
Повний текст джерелаVieux-Rochas, Maxence. "Evolution de la régulation des gènes Dlx au cours de la morphogenèse." Paris, Muséum national d'histoire naturelle, 2009. http://www.theses.fr/2009MNHN0003.
Повний текст джерелаJaw morphogenesis is a complex process involving the migration and differentiation of cephalic neural crest cells (CNCCs) and mesodermal cells to the first pharyngeal arch (PA1). Before reaching their destination CCNCs are not yet engaged in specific morphogenetic pathways. Molecular signalling and cellular interactions occurring during PA1 colonization determine the genesis of facial structures. Endothelin-1 (Edn1) signaling is necessary and sufficient to specify “lower jaw” identity; the mechanism through which this specification takes place is not yet completely elucidated. Intake of retinoic acid (RA) or of its precursor, vitamin A, during early pregnancy is associated with increased incidence of craniofacial lesions. Before my thesis, the origin of these teratogenic effects was enigmatic as in cranial neural crest cells (CNCCs), the RA-transduction pathway is not active. In the first two articles we show that, in mouse and Xenopus laevis, RA acts on the signalling epithelium of PA1 reducing the expression of Edn1 and Fgf8. Depending on the time of administration and on the dose and length of treatment, RA reduces progressively the expression of these two molecular signals. Edn1 and Fgf8 are instrumental in activating Dlx genes in incoming CNCCs, thereby triggering the morphogenetic programs, which specify different jaw elements. We report that, RA treatments provokes dramatically different craniofacial malformations when administered at slightly different developmental times within a narrow temporal interval corresponding to the colonization of the 1st PA by CNCCs. The third article provides new insight into the spatio-temporal and gene-dosage dynamics of the jaw morphogenetic process proposing a link between the alteration of this process and the origin of human malformation collectively known as "First Arch Syndromes". This thesis contributed also to five other studies on the role and regulation of Dlx5 and Dlx6 during osteogenesis, limb development, genital tubercle morphogenesis and Leydig cells differentiation
Burguière, Eric. "Rôle de la DLT cérébelleuse hétérosynaptique des fibres parallèles dans la navigation." Paris 6, 2006. https://tel.archives-ouvertes.fr/tel-00129346.
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