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Статті в журналах з теми "Displacement curent sensor"
Roy, Rinto, Alexander Tessler, Cecilia Surace, and Marco Gherlone. "Shape Sensing of Plate Structures Using the Inverse Finite Element Method: Investigation of Efficient Strain–Sensor Patterns." Sensors 20, no. 24 (December 9, 2020): 7049. http://dx.doi.org/10.3390/s20247049.
Повний текст джерелаHassanbeiglou, Alireza, Masoud Kalantari, Elaheh Mozaffari, Javad Dargahi, and József Kövecses. "A new tactile array sensor for viscoelastic tissues with time-dependent behavior." Sensor Review 35, no. 4 (September 21, 2015): 374–81. http://dx.doi.org/10.1108/sr-06-2014-656.
Повний текст джерелаLv, Chunfeng, Wei Tao, Huaming Lei, Yingying Jiang, and Hui Zhao. "Analytical Modeling for the Grating Eddy Current Displacement Sensors." Measurement Science Review 15, no. 1 (February 1, 2015): 44–51. http://dx.doi.org/10.1515/msr-2015-0007.
Повний текст джерелаSillanpää, Teemu, Alexander Smirnov, Pekko Jaatinen, Jouni Vuojolainen, Niko Nevaranta, Rafal Jastrzebski, and Olli Pyrhönen. "Three-Axis Inductive Displacement Sensor Using Phase-Sensitive Digital Signal Processing for Industrial Magnetic Bearing Applications." Actuators 10, no. 6 (May 31, 2021): 115. http://dx.doi.org/10.3390/act10060115.
Повний текст джерелаLiu, Weiping, Zhaofeng Wang, Ximing Zhang, Yulin Wang, Bochun Hu, and Ye Zhuang. "Fault Tolerant and Nano Displacement Drive Control Method of Photoelectric Motor for Battery Electric Vehicle." Journal of Nanoelectronics and Optoelectronics 16, no. 2 (February 1, 2021): 293–302. http://dx.doi.org/10.1166/jno.2021.2957.
Повний текст джерелаK., Gobi, Kannapiran B., Devaraj D., and Valarmathi K. "Design, development and performance evaluation of pressure sensor using eddy current displacement sensing coil." Sensor Review 38, no. 2 (March 19, 2018): 248–58. http://dx.doi.org/10.1108/sr-07-2017-0145.
Повний текст джерелаWang, Xiao Wen. "The Research of Sensor Application Status." Applied Mechanics and Materials 651-653 (September 2014): 543–46. http://dx.doi.org/10.4028/www.scientific.net/amm.651-653.543.
Повний текст джерелаWeng, He Zhang, Hong Wei Li, Shu Qin Liu, Zhao Liang Cheng, and Jie Liu. "Effects of Surface Crack on Eddy Current Sensor Signal in Maglev System." Applied Mechanics and Materials 278-280 (January 2013): 743–48. http://dx.doi.org/10.4028/www.scientific.net/amm.278-280.743.
Повний текст джерелаXue, Songtao, Kang Jiang, Shuai Guan, Liyu Xie, Guochun Wan, and Chunfeng Wan. "Long-Range Displacement Meters Based on Chipped Circular Patch Antenna." Sensors 20, no. 17 (August 28, 2020): 4884. http://dx.doi.org/10.3390/s20174884.
Повний текст джерелаHu, Guoliang, Wei Zhou, Mingke Liao, and Weihua Li. "Static and Dynamic Experiment Evaluations of a Displacement Differential Self-Induced Magnetorheological Damper." Shock and Vibration 2015 (2015): 1–10. http://dx.doi.org/10.1155/2015/295294.
Повний текст джерелаДисертації з теми "Displacement curent sensor"
Lai, Yuqing. "Eddy current displacement sensor with LTCC technology." [S.l.] : [s.n.], 2005. http://deposit.ddb.de/cgi-bin/dokserv?idn=976297167.
Повний текст джерелаNiemann, Hester Elna. "A high precision driver for an eddy current displacement sensor / by Elna Niemann." Thesis, North-West University, 2009. http://hdl.handle.net/10394/3990.
Повний текст джерелаThesis (M.Ing. (Electrical and Electronic Engineering))--North-West University, Potchefstroom Campus, 2010
Grobler, Andries Johannes. "A low cost eddy current displacement sensor for active magnetic bearings / by Andries J. Grobler." Thesis, North-West University, 2008. http://hdl.handle.net/10394/2627.
Повний текст джерелаThe McTronX research group of the North-West University is involved in active magnetic bearing (AMB) research. An AMB is a mechatronic system that levitates a rotating axis with electromagnetic forces. The group has successfully implemented radial and axial AMBs as well as a complete flywheel energy storage system operating at 22 000 rpm. Research is also done on using the actuator voltage and current to derive rotor position, also known as self-sensing, but these methods have not been perfected. Position measurement is very important in AMBs, since it is the main control variable. The literature indicates that the eddy current phenomenon is well suited for displacement measurement, since it is relatively noise immune and insensitive to process medium when a nonmagnetic and non-conductive substance is used. Printed circuit board (PCB) sensors must be considered when low cost is a requirement. The goal of this project is to design, simulate, manufacture and test a PCB based, low cost eddy current is placement sensor for AMBs. This project will focus on the sensor (probe) that converts the physical rotor movement to an electric signal. An evaluation platform, used to test the PCB sensor, is also designed and manufactured as part of this project. The first step in the sensor design is to establish a suitable software model. A finite element method (FEM) software package, Comsol, is used to realise a FEM model of the sensor. This FEM model is used to simulate sensor behaviour in various configurations. The trends found in the FEM model results are used to compile a design flow diagram. This diagram is illustrated by applying it to single, double- and five-layer designs. The single- and double-layer sensors are manufactured and tested to validate the accuracy of the FEM model and design flow diagram. Close correlation between the practical and predicted results is found for the single- and double layer sensors. The sensitivity and working point rms voltage correlated exceptionally well for both sensors. Linearity does not correlate as closely due to the evaluation platform and circuitry but is still within acceptable limits when compared to other displacement sensors used in AMBs. This project laid the foundation for PCB sensor design in the McTronX group. A comparison between the different sensors showed that the double-layer sensor is the best choice in terms of cost and performance. It is concluded that the PCB displacement sensor presented in this dissertation is a viable low cost option for displacement measurement in AMBs.
Thesis (M.Ing. (Electrical Engineering)--North-West University, Potchefstroom Campus, 2008.
Gunes, Cagdas. "New Imaging Approaches for Process Tomography Based on Capacitive Sensors." The Ohio State University, 2018. http://rave.ohiolink.edu/etdc/view?acc_num=osu1531058286375668.
Повний текст джерелаYang, Yi. "Power line sensor networks for enhancing power line reliability and utilization." Diss., Georgia Institute of Technology, 2011. http://hdl.handle.net/1853/41087.
Повний текст джерелаVirmontois, Cédric. "Analyse des effets des déplacements atomiques induits par l’environnement radiatif spatial sur la conception des imageurs CMOS." Thesis, Toulouse, ISAE, 2012. http://www.theses.fr/2012ESAE0009/document.
Повний текст джерелаToday, space imaging is an essential tool for sustainable development, research and scientific innovation as well as security and defense. Thanks to their good electro-optic performances and low power consumption, CMOS image sensors are serious candidates to equip future space instruments. However, it is important to know and understand the behavior of this imager technology when it faces the space radiation environment which could damage devices performances. Many previous studies have been focused on ionizing effects in CMOS imagers, showing their hardness and several hardening-by-design techniques against such radiations. The conclusions of these works emphasized the need to study non-ionizing effects which have become a major issue in the last generation of CMOS image sensors. Therefore, this research work focuses on non-ionizing effects in CMOS image sensors. These effects, also called displacement damage, are investigated on a large number of CMOS imagers and test structures. These devices are designed using several CMOS processes and using design rule changes in order to observe possible common behaviors in CMOS technology. Similarities have been shown between proton and neutron irradiations using current-voltage characteristics and deep level transient spectroscopy. These results emphasize the relevance of neutron irradiations for an accurate study of the non-ionizing effects. Then, displacement damage induced dark current increase as well as the associated random telegraph signal are measured and modeled. Common evaluation parameters to investigate displacement damage are found, allowing imager behavior prediction in space radiation environment. Finally, specific methods and hardening-by-design techniques to mitigate displacement damage are proposed
Ursule, Marie-Cécile. "Compréhension des mécanismes physiques à l'origine des dégradations électriques extrêmes des pixels dans les capteurs d'images irradiés." Thesis, Toulouse, ISAE, 2017. http://www.theses.fr/2017ESAE0014/document.
Повний текст джерелаImage sensors are used in various space applications: space and earth observations, attitude calculation etc. Those sensors are very sensitive to the space environment whose radiations lead to a degradation of their performances. Among the different impacted parameters, we are interested in the increase of dark current in the pixels. This parasitic current is caused by the thermal generation of charge carriers without any light excitation inducing the increase of the background noise on the images. Some pixels exhibiting the highest degradation are particularly disadvantageous for space missions. They can be critical for some missions and impose to the space community to develop effective prediction methods. ONERA developed an original method to predict dark current induce by the space radiations, based on a Monte Carlo method and the GEANT4 library. The objective of the PhD is to improve the performances of the tool. The approach of this work is first to modify the numerical tool for extreme cases of modelling (i.e. high fluencies or huge pixel volume) for which the Monte Carlo simulations are too long. In order to reduce this computation time, we developed calculation methods using statistical simplifications. In a second part, we studied the influence of the pixel geometry on the dark current. The idea is to follow the degradation cascades created by space particles and to determine if those cascades are contained in the impacted pixel or if they reach neighbor pixels. Finally, we modelled in our tool the physical mechanisms potentially responsible of the highest degradations linked to the electric field, the Poole-Frenkel effect and the phonon assisted tunneling
Le, Roch Alexandre. "Analyse de l’augmentation et de la fluctuation discrète du courant d’obscurité des imageurs CMOS dans les environnements radiatifs spatiaux et nucléaires." Thesis, Toulouse, ISAE, 2020. http://www.theses.fr/2020ESAE0018.
Повний текст джерелаInspired by the microelectronic Complementary Metal Oxide Semiconductor (CMOS) technologies, CMOS image sensors are widely used in many consumer-grade applications and are predominant in the commercial market for embedded cameras. Over the past decade,numerous technological advances allowed state-of-the-art CMOS image sensors to achieve excellent performances as well as low-power consumption. Therefore, CMOS image sensors are becoming essential candidates for a growing number of high-end applications such as space and nuclear applications. However, the behavior of these microelectronic devices inspace and nuclear radiative environments is still under understanding. Hence, studies still investigate the different mechanisms that lead to the degradation of CMOS image sensor performances including the radiation-induced dark current increase, a parasitic signal that increases with radiation doses. Among these radiation doses, the so-called displacement dose,relative to the alteration of the crystalline structure of the silicon, remains poorly studied compared to the so-called ionizing dose. In the latest CMOS image sensor technologies using pinned photodiodes, the ionizing dose is no longer the main degradation mechanism when the displacement dose is at stake. From then on, the displacement dose becomes the principal degradation mechanism that leads to the dark current increase. This work mainly focuses onthe role of the crystalline defects, created by radiation-induced displacement damage, in the CMOS image sensor dark current increase. Particular interest is given to metastable defects,which are probably the cause of discrete and random fluctuations of the dark current called : Dark Current Random Telegraph Signal (DC-RTS). This study presents a double objective :The first aims to contribute to improving knowledge of the physical principles involved in crystalline silicon when facing radiations. Particle-matter interactions, combined with the specific architecture of image sensors, aim to provide reliable tools to analyze the radiation induced defects in silicon. Observations and findings can be extended to all silicon-based devices and more generally to other semiconductor-based devices.The second seeks to identify the different mechanisms leading to CMOS image sensor dark current increase when operating in radiative environments. The study aims to identify and improve knowledge on the behavior of dark current sources aiming to optimize CMOS image sensors for future space and nuclear applications
Zaidi, Houda. "Méthodologies pour la modélisation des couches fines et du déplacement en contrôle non destructif par courants de Foucault : application aux capteurs souples." Phd thesis, Université Paris Sud - Paris XI, 2012. http://tel.archives-ouvertes.fr/tel-00776931.
Повний текст джерелаGuganeswaran, S. "Design and Optimization of Displacement Measurement Eddy Current Sensor for Mass Production." Thesis, 2014. http://etd.iisc.ernet.in/handle/2005/2754.
Повний текст джерелаЧастини книг з теми "Displacement curent sensor"
Charry, Edgar, and Daniel T. H. Lai. "Methods for Improving Foot Displacement Measurements Calculated from Inertial Sensors." In Biomedical Engineering and Information Systems, 93–116. IGI Global, 2011. http://dx.doi.org/10.4018/978-1-61692-004-3.ch005.
Повний текст джерела"The design and simulation of large range of eddy current displacement sensor circuit." In Advanced Materials, Mechanical and Structural Engineering, 371–76. CRC Press, 2016. http://dx.doi.org/10.1201/b19934-73.
Повний текст джерелаТези доповідей конференцій з теми "Displacement curent sensor"
McNeill, Scot, Tomokazu Saruhashi, Ikuo Sawada, Masanori Kyo, Eigo Miyazaki, and Yasuyuki Yamazaki. "A Method for Estimating Quasi-Static Riser Deformation and Applied Forces From Sparse Riser Inclination Measurements." In ASME 2015 34th International Conference on Ocean, Offshore and Arctic Engineering. American Society of Mechanical Engineers, 2015. http://dx.doi.org/10.1115/omae2015-41286.
Повний текст джерелаSpiewak, Swavik, Curtis Zaiss, and Stephen J. Ludwick. "High Accuracy, Low-Invasive Displacement Sensor (HALIDS)." In ASME 2013 International Mechanical Engineering Congress and Exposition. American Society of Mechanical Engineers, 2013. http://dx.doi.org/10.1115/imece2013-66767.
Повний текст джерелаFaggion, Lorenzo, and Abdulhussain E. Mahdi. "Noncontact human electrophysiological measurements using a new displacement current sensor." In 2011 IEEE Sensors. IEEE, 2011. http://dx.doi.org/10.1109/icsens.2011.6127145.
Повний текст джерелаVyroubal, Darko, and Igor Lackovic. "Target temperature effect on eddy-current displacement sensing." In 2015 IEEE Sensors Applications Symposium (SAS). IEEE, 2015. http://dx.doi.org/10.1109/sas.2015.7133621.
Повний текст джерелаWaterfall, Tyler, Kendall Teichert, and Brian Jensen. "Simultaneous On-Chip Sensing and Actuation Using the Thermomechanical In-Plane Microactuator." In ASME 2007 International Design Engineering Technical Conferences and Computers and Information in Engineering Conference. ASMEDC, 2007. http://dx.doi.org/10.1115/detc2007-34982.
Повний текст джерелаAnil Kumar, A. S., Boby George, and Subhas Chandra Mukhopadhyay. "An Eddy Current Based Non-contact Displacement Sensor." In 2020 IEEE International Instrumentation and Measurement Technology Conference (I2MTC). IEEE, 2020. http://dx.doi.org/10.1109/i2mtc43012.2020.9128506.
Повний текст джерелаPan, Haifeng, Huizhong Zhu, Zhibin Fu, Yuzheng Xu, and Guanping Feng. "New type of eddy current sensor for large-displacement test." In International Conference on Sensing units and Sensor Technology, edited by Yikai Zhou and Shunqing Xu. SPIE, 2001. http://dx.doi.org/10.1117/12.440200.
Повний текст джерелаVogel, Johan G., Vikram Chaturvedi, and Stoyan Nihtianov. "Shieldless Eddy-Current Displacement Sensor with Improved Measurement Sensitivity." In 2018 IEEE XXVII International Scientific Conference Electronics (ET). IEEE, 2018. http://dx.doi.org/10.1109/et.2018.8549631.
Повний текст джерелаSilva, Daniely G., Jose A. Justino Ribeiro, and Tales C. Pimenta. "Design of eddy current sensor IC for large displacement." In 2013 IEEE 22nd International Symposium on Industrial Electronics (ISIE). IEEE, 2013. http://dx.doi.org/10.1109/isie.2013.6563635.
Повний текст джерелаPimenta, Matheus, Cagri Gurleyuk, Paul Walsh, Daniel O'Keeffe, Masoud Babaie та Kofi Makinwa. "A 200μW Eddy Current Displacement Sensor with 6.7nmRMS Resolution". У 2020 IEEE Symposium on VLSI Circuits. IEEE, 2020. http://dx.doi.org/10.1109/vlsicircuits18222.2020.9162849.
Повний текст джерелаЗвіти організацій з теми "Displacement curent sensor"
Soye, Emma, and Charles Watters. Newcomer Wellbeing and Placemaking in Southeast England. Institute of Development Studies, June 2022. http://dx.doi.org/10.19088/ids.2022.042.
Повний текст джерела