Статті в журналах з теми "Disorder, Doping"
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Santos, Ricardo D. S., and Marcos V. dos S. Rezende. "Doping disorder and the reduction–doping process in LiSrPO4." Phys. Chem. Chem. Phys. 19, no. 40 (2017): 27731–38. http://dx.doi.org/10.1039/c7cp04566b.
Повний текст джерелаJones, Carwyn. "Doping as addiction: disorder and moral responsibility." Journal of the Philosophy of Sport 42, no. 2 (January 6, 2015): 251–67. http://dx.doi.org/10.1080/00948705.2014.997743.
Повний текст джерелаKabbaj, M., J. P. Albert, and C. Jouanin. "Effects of Doping Induced Disorder in Polyacetylene." Molecular Crystals and Liquid Crystals 117, no. 1 (February 1985): 205–8. http://dx.doi.org/10.1080/00268948508074625.
Повний текст джерелаFediai, Artem, Anne Emering, Franz Symalla, and Wolfgang Wenzel. "Disorder-driven doping activation in organic semiconductors." Physical Chemistry Chemical Physics 22, no. 18 (2020): 10256–64. http://dx.doi.org/10.1039/d0cp01333a.
Повний текст джерелаTurkel, Simon, Joshua Swann, Ziyan Zhu, Maine Christos, K. Watanabe, T. Taniguchi, Subir Sachdev, et al. "Orderly disorder in magic-angle twisted trilayer graphene." Science 376, no. 6589 (April 8, 2022): 193–99. http://dx.doi.org/10.1126/science.abk1895.
Повний текст джерелаZhang, Kai, Ren-Shu Wang, and Xiao-Jia Chen. "Order–disorder transition in p-oligophenyls." Physical Chemistry Chemical Physics 21, no. 25 (2019): 13590–99. http://dx.doi.org/10.1039/c9cp01924c.
Повний текст джерелаQueisser, Hans J. "Order and Disorder in Semiconductors." MRS Bulletin 20, no. 12 (December 1995): 43–49. http://dx.doi.org/10.1557/s0883769400045899.
Повний текст джерелаHarigaya, Kikuo, Yasushi Wada, and Klaus Fesser. "Doping disorder and level structures in conjugated polymers." Synthetic Metals 43, no. 1-2 (June 1991): 3579–82. http://dx.doi.org/10.1016/0379-6779(91)91356-f.
Повний текст джерелаTanaka, Hisaaki, Kaito Kanahashi, Naoya Takekoshi, Hiroaki Mada, Hiroshi Ito, Yukihiro Shimoi, Hiromichi Ohta, and Taishi Takenobu. "Thermoelectric properties of a semicrystalline polymer doped beyond the insulator-to-metal transition by electrolyte gating." Science Advances 6, no. 7 (February 2020): eaay8065. http://dx.doi.org/10.1126/sciadv.aay8065.
Повний текст джерелаMarinov, Georgi, Biliana Georgieva, Marina Vasileva, and Tsvetanka Babeva. "Study of Structure, Morphology and Optical Properties of Cobalt-Doped and Co/Al-co-Doped ZnO Thin Films Deposited by Electrospray Method." Applied Sciences 13, no. 17 (August 25, 2023): 9611. http://dx.doi.org/10.3390/app13179611.
Повний текст джерелаFinsterer, Josef. "Doping May Be Responsible for De Novo Mitochondrial Disorder." Advanced Pharmaceutical Bulletin 9, no. 2 (June 1, 2019): 180–81. http://dx.doi.org/10.15171/apb.2019.021.
Повний текст джерелаJarlborg, T. "Electronic Structure, Doping, Order and Disorder in Cuprate Superconductors." Journal of Superconductivity and Novel Magnetism 29, no. 3 (December 4, 2015): 637–42. http://dx.doi.org/10.1007/s10948-015-3289-x.
Повний текст джерелаŚlebarski, Andrzej, and Maciej M. Maśka. "Enhancing Superconductivity of the Nonmagnetic Quasiskutterudites by Atomic Disorder." Materials 13, no. 24 (December 21, 2020): 5830. http://dx.doi.org/10.3390/ma13245830.
Повний текст джерелаGHORBANI, S. R., та F. ABRINAEY. "THE NORMAL STATE HALL EFFECT IN NdBa2-xLaxCu3O7-δ: EVIDENCE FOR HOLE LOCALIZATION BY LA DOPING". International Journal of Modern Physics B 23, № 31 (20 грудня 2009): 5779–88. http://dx.doi.org/10.1142/s0217979209052315.
Повний текст джерелаYan, Hui Yu, Yan Rui Guo, and Qing Gong Song. "The Structures and Electronic Properties of Composite Material (LaxAl1-X)2O3 from First-Principles Study." Advanced Materials Research 583 (October 2012): 158–61. http://dx.doi.org/10.4028/www.scientific.net/amr.583.158.
Повний текст джерелаIslam, R. S., and S. H. Naqib. "Doping and disorder dependent isotope exponent in hole doped cuprates." Journal of Physics: Conference Series 1718 (January 2021): 012005. http://dx.doi.org/10.1088/1742-6596/1718/1/012005.
Повний текст джерелаSerevičius, Tomas, Rokas Skaisgiris, Dalius Gudeika, Karolis Kazlauskas, and Saulius Juršėnas. "Conformational disorder enabled emission phenomena in heavily doped TADF films." Physical Chemistry Chemical Physics 24, no. 1 (2022): 313–20. http://dx.doi.org/10.1039/d1cp04905d.
Повний текст джерелаYang, Kewei, Xiaoyu Chen, Zhenhuan Zheng, Jiaqi Wan, Miao Feng, and Yan Yu. "Solvent-induced surface disorder and doping-induced lattice distortion in anatase TiO2 nanocrystals for enhanced photoreversible color switching." Journal of Materials Chemistry A 7, no. 8 (2019): 3863–73. http://dx.doi.org/10.1039/c8ta10045d.
Повний текст джерелаNguyen, Thanh H., and Stephen K. O’Leary. "The dependence of the Fermi level on temperature, doping concentration, and disorder in disordered semiconductors." Journal of Applied Physics 88, no. 6 (September 15, 2000): 3479–83. http://dx.doi.org/10.1063/1.1289078.
Повний текст джерелаBairamov, B. H., V. Yu Rud', and Yu V. Rud'. "Properties of Dopants in ZnGeP2, CdGeAs2, AgGaS2 and AgGaSe2." MRS Bulletin 23, no. 7 (July 1998): 41–44. http://dx.doi.org/10.1557/s0883769400029080.
Повний текст джерелаLee, Youngseok, Vinh Ai Dao, Sangho Kim, Sunbo Kim, Hyeongsik Park, Jaehyun Cho, Shihyun Ahn, and Junsin Yi. "The Compromise Condition for High Performance of the Single Silicon Heterojunction Solar Cells." International Journal of Photoenergy 2012 (2012): 1–6. http://dx.doi.org/10.1155/2012/283872.
Повний текст джерелаRao, M. S. Ramachandra, V. Ravindranath, and R. Gross. "Evidence of reduction in spin disorder by Ho3+doping in La0.7Ca0.3MnO." Philosophical Magazine 83, no. 13 (January 2003): 1631–43. http://dx.doi.org/10.1080/1478643031000082580.
Повний текст джерелаMaity, Sumit Ranjan, Monica Ceretti, Lukas Keller, Jürg Schefer, Tian Shang, Ekaterina Pomjakushina, Martin Meven, Denis Sheptyakov, Anonio Cervellino, and Werner Paulus. "Structural disorder and magnetic correlations driven by oxygen doping in Nd2NiO4.11." Acta Crystallographica Section A Foundations and Advances 75, a2 (August 18, 2019): e393-e393. http://dx.doi.org/10.1107/s2053273319091630.
Повний текст джерелаLi, Huashan, and Jeffrey C. Grossman. "Graphene Nanoribbon Based Thermoelectrics: Controllable Self- Doping and Long-Range Disorder." Advanced Science 4, no. 8 (March 31, 2017): 1600467. http://dx.doi.org/10.1002/advs.201600467.
Повний текст джерелаSingh, Priyanka, Brajendra Singh та Mukul Gupta. "Chemical disorder induced positive magnetoimpedance in La0.7Pb0.3Mn0.35Fe0.65O3−δ and La0.7Pb0.3Mn0.3Fe0.7O3−δ manganites". European Physical Journal Applied Physics 93, № 3 (березень 2021): 30601. http://dx.doi.org/10.1051/epjap/2021200333.
Повний текст джерелаRanchoux, B., and J. F. Currie. "Étude des corrélations entre paramètres de préparation, caractéristiques électriques et physico-chimiques d'échantillons de a-Si : H dopés ou non." Canadian Journal of Physics 63, no. 1 (January 1, 1985): 54–58. http://dx.doi.org/10.1139/p85-009.
Повний текст джерелаZelený, Martin, and Ivo Dlouhý. "Different Ab Initio Approaches for Doping Descriptions: Tetragonal Deformation of Ni-Mn-Ga Alloys." Solid State Phenomena 258 (December 2016): 37–40. http://dx.doi.org/10.4028/www.scientific.net/ssp.258.37.
Повний текст джерелаTarkowski, T., T. Słupiński, and K. Karpierz. "Studies of Magnetoresistance in GaAs:Te Crystals with Structural Disorder at Doping Limit." Acta Physica Polonica A 119, no. 5 (May 2011): 726–28. http://dx.doi.org/10.12693/aphyspola.119.726.
Повний текст джерелаKim, J. H., S. X. Dou, Sangjun Oh, M. Jerčinović, E. Babić, T. Nakane, and H. Kumakura. "Correlation between doping induced disorder and superconducting properties in carbohydrate doped MgB2." Journal of Applied Physics 104, no. 6 (September 15, 2008): 063911. http://dx.doi.org/10.1063/1.2980275.
Повний текст джерелаPablo-Pedro, Ricardo, Miguel Angel Magaña-Fuentes, Marcelo Videa, Jing Kong, Mingda Li, Jose L. Mendoza-Cortes, and Troy Van Voorhis. "Understanding Disorder in 2D Materials: The Case of Carbon Doping of Silicene." Nano Letters 20, no. 9 (July 29, 2020): 6336–43. http://dx.doi.org/10.1021/acs.nanolett.0c01775.
Повний текст джерелаChatterji, Tapan, Bachir Ouladdiaf, P. Mandal, and B. Ghosh. "Orbital order–disorder transition in La1−xBaxMnO3 in the low-doping region." Solid State Communications 131, no. 2 (July 2004): 75–80. http://dx.doi.org/10.1016/j.ssc.2004.04.041.
Повний текст джерелаSkuja, L., K. Kajihara, Y. Ikuta, M. Hirano, and H. Hosono. "Urbach absorption edge of silica: reduction of glassy disorder by fluorine doping." Journal of Non-Crystalline Solids 345-346 (October 2004): 328–31. http://dx.doi.org/10.1016/j.jnoncrysol.2004.08.038.
Повний текст джерелаHuang, Tung-Ching, and Wen-Feng Hsieh. "Destruction of the short-range disorder due to erbium doping in Pb0.8La0.2TiO3films." Journal of Raman Spectroscopy 41, no. 5 (September 21, 2009): 553–57. http://dx.doi.org/10.1002/jrs.2474.
Повний текст джерелаSharma, Ankur, Pinki Yadav, R. Bhatt, Soma Banik, Gurvinderjit Singh, and Indranil Bhaumik. "Effect of Nb substitution on the electronic property of lead-free piezoelectric (Na0.41K0.09Bi0.50)TiO3 single crystal: Optical absorption and photoelectron study." Journal of Applied Physics 132, no. 20 (November 28, 2022): 205103. http://dx.doi.org/10.1063/5.0124508.
Повний текст джерелаBoubaker, K., A. Colantoni, and P. Petkova. "The Lattice Compatibility Theory: Supports from the Generalized Simha-Somcynsky Chemical Physics-Related Theory." International Journal of Chemical Physics 2013 (August 5, 2013): 1–6. http://dx.doi.org/10.1155/2013/728040.
Повний текст джерелаTuccillo, Mariarosaria, Lorenzo Mei, Oriele Palumbo, Ana Belén Muñoz-García, Michele Pavone, Annalisa Paolone, and Sergio Brutti. "Replacement of Cobalt in Lithium-Rich Layered Oxides by n-Doping: A DFT Study." Applied Sciences 11, no. 22 (November 9, 2021): 10545. http://dx.doi.org/10.3390/app112210545.
Повний текст джерелаVerde, Jose C., Alberto S. Viz, Martín M. Botana, Carlos Montero-Orille, and Manuel V. Ramallo. "Calculations of Some Doping Nanostructurations and Patterns Improving the Functionality of High-Temperature Superconductors for Bolometer Device Applications." Nanomaterials 10, no. 1 (January 3, 2020): 97. http://dx.doi.org/10.3390/nano10010097.
Повний текст джерелаAdhikari, Rajdeep, Bogdan Faina, Verena Ney, Julia Vorhauer, Antonia Sterrer, Andreas Ney, and Alberta Bonanni. "Effect of Impurity Scattering on Percolation of Bosonic Islands and Superconductivity in Fe Implanted NbN Thin Films." Nanomaterials 12, no. 18 (September 7, 2022): 3105. http://dx.doi.org/10.3390/nano12183105.
Повний текст джерелаLin, Jianwei, Wanyu Lv, Yayun Gu, Kai Guo, Xinxin Yang, and Jingtai Zhao. "Intentional Carrier Doping to Realize n-Type Conduction in Zintl Phases Eu5−yLayIn2.2Sb6." Materials 12, no. 2 (January 15, 2019): 264. http://dx.doi.org/10.3390/ma12020264.
Повний текст джерелаHu, Jiayuan, Wenxiang Jiang, Qi Lu, Chenhang Xu, Jiangtao Wu, Jinlong Jiao, Guohua Wang, Jie Ma, and Dong Qian. "Manipulating the magneto-resistance of Bi2Se3 thin films by strontium doping." Journal of Applied Physics 132, no. 9 (September 7, 2022): 095302. http://dx.doi.org/10.1063/5.0092075.
Повний текст джерелаCui, Xiaoyan, Tingjing Hu, Jingshu Wang, Junkai Zhang, Xin Zhong, Yanli Chen, Xuefei Li, Jinghai Yang, and Chunxiao Gao. "Ionic Transportation and Dielectric Properties of YF3:Eu3+ Nanocrystals." Nanomaterials 8, no. 12 (December 1, 2018): 995. http://dx.doi.org/10.3390/nano8120995.
Повний текст джерелаParisini, Antonella, and Roberta Nipoti. "Carrier Transport Mechanisms in Ion Implanted and Highly-Doped p-Type 4H-SiC(Al)." Materials Science Forum 963 (July 2019): 318–23. http://dx.doi.org/10.4028/www.scientific.net/msf.963.318.
Повний текст джерелаŚlebarski, A., P. Zajdel, M. Fijałkowski, M. M. Maśka, P. Witas, J. Goraus, Y. Fang, D. C. Arnold, and M. B. Maple. "The effective increase in atomic scale disorder by doping and superconductivity in Ca3Rh4Sn13." New Journal of Physics 20, no. 10 (October 15, 2018): 103020. http://dx.doi.org/10.1088/1367-2630/aae4a8.
Повний текст джерелаGalanakis, I., K. Özdoğan, B. Aktaş, and E. Şaşıoğlu. "Effect of doping and disorder on the half metallicity of full Heusler alloys." Applied Physics Letters 89, no. 4 (July 24, 2006): 042502. http://dx.doi.org/10.1063/1.2235913.
Повний текст джерелаDutton, S. E., C. L. Broholm та R. J. Cava. "Divergent effects of static disorder and hole doping in geometrically frustrated β-CaCr2O4". Journal of Solid State Chemistry 183, № 8 (серпень 2010): 1798–804. http://dx.doi.org/10.1016/j.jssc.2010.05.032.
Повний текст джерелаThomas, Elayne M., Bhooshan C. Popere, Haiyu Fang, Michael L. Chabinyc, and Rachel A. Segalman. "Role of Disorder Induced by Doping on the Thermoelectric Properties of Semiconducting Polymers." Chemistry of Materials 30, no. 9 (April 23, 2018): 2965–72. http://dx.doi.org/10.1021/acs.chemmater.8b00394.
Повний текст джерелаXing, Wen, Kazuaki Toyoura, and Truls Norby. "Effect of cation disorder on the solubility and result of doping in oxides." International Journal of Hydrogen Energy 37, no. 9 (May 2012): 8062–65. http://dx.doi.org/10.1016/j.ijhydene.2011.11.136.
Повний текст джерелаYi, Xiao, and Luo Xiao-ming. "The Densities of Electronic States of Polyparaphenylene Upon Disorder Doping in Bipolaron Model." Communications in Theoretical Physics 14, no. 2 (September 1990): 225–26. http://dx.doi.org/10.1088/0253-6102/14/2/225.
Повний текст джерелаNISHIZAKI, TERUKAZU, TAKAHIKO SASAKI, NORIO KOBAYASHI, YOSHIHIKO TAKANO, MASANORI NAGAO, and HIROSHI KAWARADA. "SPATIAL VARIATION OF TUNNELING SPECTRA IN (111)-ORIENTED FILMS OF BORON-DOPED DIAMOND PROBED BY STM/STS." International Journal of Modern Physics B 27, no. 15 (June 4, 2013): 1362014. http://dx.doi.org/10.1142/s0217979213620142.
Повний текст джерелаLim, Shao Qi, and James S. Williams. "Electrical and Optical Doping of Silicon by Pulsed-Laser Melting." Micro 2, no. 1 (December 24, 2021): 1–22. http://dx.doi.org/10.3390/micro2010001.
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