Статті в журналах з теми "Dislocation transport"
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Gbemou, Kodjovi, Jean Marc Raulot, Vincent Taupin, and Claude Fressengeas. "Continuous Modeling of Dislocation Cores Using a Mechanical Theory of Dislocation Fields." Materials Science Forum 879 (November 2016): 2456–62. http://dx.doi.org/10.4028/www.scientific.net/msf.879.2456.
Повний текст джерелаLund, Fernando, and Bruno Scheihing-Hitschfeld. "The Scattering of Phonons by Infinitely Long Quantum Dislocations Segments and the Generation of Thermal Transport Anisotropy in a Solid Threaded by Many Parallel Dislocations." Nanomaterials 10, no. 9 (August 29, 2020): 1711. http://dx.doi.org/10.3390/nano10091711.
Повний текст джерелаMurphy, John D., A. Giannattasio, Charles R. Alpass, Semih Senkader, Robert J. Falster, and Peter R. Wilshaw. "The Influence of Nitrogen on Dislocation Locking in Float-Zone Silicon." Solid State Phenomena 108-109 (December 2005): 139–44. http://dx.doi.org/10.4028/www.scientific.net/ssp.108-109.139.
Повний текст джерелаMaroudas, Dimitris, and Robert A. Brown. "Constitutive modeling of the effects of oxygen on the deformation behavior of silicon." Journal of Materials Research 6, no. 11 (November 1991): 2337–52. http://dx.doi.org/10.1557/jmr.1991.2337.
Повний текст джерелаNITTA, S., T. KASHIMA, R. NAKAMURA, M. IWAYA, H. AMANO, and I. AKASAKI. "MASS TRANSPORT OF GaN AND REDUCTION OF THREADING DISLOCATIONS." Surface Review and Letters 07, no. 05n06 (October 2000): 561–64. http://dx.doi.org/10.1142/s0218625x00000567.
Повний текст джерелаGagel, J., D. Weygand, and P. Gumbsch. "Discrete Dislocation Dynamics simulations of dislocation transport during sliding." Acta Materialia 156 (September 2018): 215–27. http://dx.doi.org/10.1016/j.actamat.2018.06.002.
Повний текст джерелаZhao, Yue, Lucile Dezerald, and Jaime Marian. "Electronic Structure Calculations of Oxygen Atom Transport Energetics in the Presence of Screw Dislocations in Tungsten." Metals 9, no. 2 (February 20, 2019): 252. http://dx.doi.org/10.3390/met9020252.
Повний текст джерелаOktyabrsky, S., R. Kalyanaraman, K. Jagannadham та J. Narayan. "Dislocation structure of low-angle grain boundaries in YBa2Cu3O7−δ/MgO films". Journal of Materials Research 14, № 7 (липень 1999): 2764–72. http://dx.doi.org/10.1557/jmr.1999.0369.
Повний текст джерелаDalmau, Rafael, Jeffrey Britt, Hao Yang Fang, Balaji Raghothamachar, Michael Dudley, and Raoul Schlesser. "X-Ray Topography Characterization of Large Diameter AlN Single Crystal Substrates." Materials Science Forum 1004 (July 2020): 63–68. http://dx.doi.org/10.4028/www.scientific.net/msf.1004.63.
Повний текст джерелаWulfinghoff, Stephan, Vedran Glavas, and Thomas Böhlke. "Dislocation Transport in Single Crystals and Dislocation-based Micromechanical Hardening." PAMM 11, no. 1 (December 2011): 449–50. http://dx.doi.org/10.1002/pamm.201110216.
Повний текст джерелаDudley, Michael, Huan Huan Wang, Fang Zhen Wu, Sha Yan Byrapa, Balaji Raghothamachar, Gloria Choi, Edward K. Sanchez, et al. "Formation Mechanism of Stacking Faults in PVT 4H-SiC Created by Deflection of Threading Dislocations with Burgers Vector c+a." Materials Science Forum 679-680 (March 2011): 269–72. http://dx.doi.org/10.4028/www.scientific.net/msf.679-680.269.
Повний текст джерелаUpadhyay, Manas Vijay, and Jérémy Bleyer. "Dislocation transport using a time-explicit Runge–Kutta discontinuous Galerkin finite element approach." Modelling and Simulation in Materials Science and Engineering 30, no. 3 (February 21, 2022): 034002. http://dx.doi.org/10.1088/1361-651x/ac44a7.
Повний текст джерелаRaghothamachar, Balaji, Yu Yang, Rafael Dalmau, Baxter Moody, H. Spalding Craft, Raoul Schlesser, Michael Dudley, and Zlatko Sitar. "Defect Generation Mechanisms in PVT-Grown AlN Single Crystal Boules." Materials Science Forum 740-742 (January 2013): 91–94. http://dx.doi.org/10.4028/www.scientific.net/msf.740-742.91.
Повний текст джерелаWu, Fang Zhen, Huan Huan Wang, Sha Yan Byrapa, Balaji Raghothamachar, Michael Dudley, Edward K. Sanchez, Darren M. Hansen, Roman Drachev, Stephan G. Mueller, and Mark J. Loboda. "Synchrotron X-Ray Topography Studies of the Propagation and Post-Growth Mutual Interaction of Threading Growth Dislocations with C-Component of Burgers Vector in PVT-Grown 4H-SiC." Materials Science Forum 717-720 (May 2012): 343–46. http://dx.doi.org/10.4028/www.scientific.net/msf.717-720.343.
Повний текст джерелаDogge, M. M. W., R. H. J. Peerlings, and M. G. D. Geers. "Interface modeling in continuum dislocation transport." Mechanics of Materials 88 (September 2015): 30–43. http://dx.doi.org/10.1016/j.mechmat.2015.04.007.
Повний текст джерелаWulfinghoff, Stephan, and Thomas Böhlke. "Gradient crystal plasticity including dislocation-based work-hardening and dislocation transport." International Journal of Plasticity 69 (June 2015): 152–69. http://dx.doi.org/10.1016/j.ijplas.2014.12.003.
Повний текст джерелаFilatov, A., A. Pogorelov, D. Kropachev, and O. Dmitrichenko. "Dislocation Mass-Transfer and Electrical Phenomena in Metals under Pulsed Laser Influence." Defect and Diffusion Forum 363 (May 2015): 173–77. http://dx.doi.org/10.4028/www.scientific.net/ddf.363.173.
Повний текст джерелаWang, Ding, Ping Wang, Shubham Mondal, Yixin Xiao, Mingtao Hu, and Zetian Mi. "Impact of dislocation density on the ferroelectric properties of ScAlN grown by molecular beam epitaxy." Applied Physics Letters 121, no. 4 (July 25, 2022): 042108. http://dx.doi.org/10.1063/5.0099913.
Повний текст джерелаGao, Yu Qiang, Hong Yan Zhang, Yan Min Zong, Huan Huan Wang, Jian Qiu Guo, Balaji Raghothamachar, Michael Dudley, and Xi Jie Wang. "150 mm 4H-SiC Substrate with Low Defect Density." Materials Science Forum 858 (May 2016): 41–44. http://dx.doi.org/10.4028/www.scientific.net/msf.858.41.
Повний текст джерелаTurlo, Vladyslav. "Dislocations as a Tool for Nanostructuring Advanced Materials." Physchem 1, no. 3 (September 26, 2021): 225–31. http://dx.doi.org/10.3390/physchem1030016.
Повний текст джерелаJohnson, J. N. "Dislocation transport in shock‐loaded single crystals." Applied Physics Letters 50, no. 1 (January 5, 1987): 28–30. http://dx.doi.org/10.1063/1.98116.
Повний текст джерелаChen, Yi, Ning Zhang, Xian Rong Huang, David R. Black, and Michael Dudley. "Studies of the Distribution of Elementary Threading Screw Dislocations in 4H Silicon Carbide Wafer." Materials Science Forum 600-603 (September 2008): 301–4. http://dx.doi.org/10.4028/www.scientific.net/msf.600-603.301.
Повний текст джерелаPu, S. D., and S. W. Ooi. "Hydrogen transport by dislocation movement in austenitic steel." Materials Science and Engineering: A 761 (July 2019): 138059. http://dx.doi.org/10.1016/j.msea.2019.138059.
Повний текст джерелаHwang, C., and I. M. Bernstein. "Dislocation transport of hydrogen in iron single crystals." Acta Metallurgica 34, no. 6 (June 1986): 1001–10. http://dx.doi.org/10.1016/0001-6160(86)90209-9.
Повний текст джерелаRaghothamachar, Balaji, Rafael Dalmau, Baxter Moody, H. Spalding Craft, Raoul Schlesser, Jin Qiao Xie, Ramón Collazo, Michael Dudley, and Zlatko Sitar. "Low Defect Density Bulk AlN Substrates for High Performance Electronics and Optoelectronics." Materials Science Forum 717-720 (May 2012): 1287–90. http://dx.doi.org/10.4028/www.scientific.net/msf.717-720.1287.
Повний текст джерелаFressengeas, Claude, and Vincent Taupin. "Revisiting the Application of Field Dislocation and Disclination Mechanics to Grain Boundaries." Metals 10, no. 11 (November 16, 2020): 1517. http://dx.doi.org/10.3390/met10111517.
Повний текст джерелаSai, P. O., N. V. Safryuk-Romanenko, D. B. But, G. Cywiński, N. S. Boltovets, P. N. Brunkov, N. V. Jmeric, S. V. Ivanov, and V. V. Shynkarenko. "Features of the Formation of Ohmic Contacts to n+-InN." Ukrainian Journal of Physics 64, no. 1 (January 30, 2019): 56. http://dx.doi.org/10.15407/ujpe64.1.56.
Повний текст джерелаWicht, Thomas, Stephan Müller, Roland Weingärtner, Boris Epelbaum, Sven Besendörfer, Ulrich Bläß, Matthias Weisser, Tobias Unruh, and Elke Meissner. "X-ray characterization of physical-vapor-transport-grown bulk AlN single crystals." Journal of Applied Crystallography 53, no. 4 (July 30, 2020): 1080–86. http://dx.doi.org/10.1107/s1600576720008961.
Повний текст джерелаTraynelis, Vincent C., Gary D. Marano, Ralph O. Dunker, and Howard H. Kaufman. "Traumatic atlanto-occipital dislocation." Journal of Neurosurgery 65, no. 6 (December 1986): 863–70. http://dx.doi.org/10.3171/jns.1986.65.6.0863.
Повний текст джерелаMilosevic, Boban, and Vasilije Miskovic. "Choice of sites and means of transport for dislocation." Vojnotehnicki glasnik 51, no. 4-5 (2003): 433–46. http://dx.doi.org/10.5937/vojtehg0305433m.
Повний текст джерелаHaegel, Nancy M., Scott E. Williams, C. Frenzen, and C. Scandrett. "Imaging charge transport and dislocation networks in ordered GaInP." Physica B: Condensed Matter 404, no. 23-24 (December 2009): 4963–66. http://dx.doi.org/10.1016/j.physb.2009.08.219.
Повний текст джерелаVaradhan, S. N., A. J. Beaudoin, A. Acharya, and C. Fressengeas. "Dislocation transport using an explicit Galerkin/least-squares formulation." Modelling and Simulation in Materials Science and Engineering 14, no. 7 (September 27, 2006): 1245–70. http://dx.doi.org/10.1088/0965-0393/14/7/011.
Повний текст джерелаWALGRAEF, D. "Reaction-transport dynamics and dislocation patterns in deformed materials." Earth-Science Reviews 29, no. 1-4 (October 1990): 299–308. http://dx.doi.org/10.1016/0012-8252(90)90044-v.
Повний текст джерелаYang, Long, Li Xia Zhao, Hui Wang Wu, Yafei Liu, Tuerxun Ailihumaer, Balaji Raghothamachar, and Michael Dudley. "Characterization and Reduction of Defects in 4H-SiC Substrate and Homo-Epitaxial Wafer." Materials Science Forum 1004 (July 2020): 387–92. http://dx.doi.org/10.4028/www.scientific.net/msf.1004.387.
Повний текст джерелаRestuccia, Liliana. "Non-equilibrium temperatures and heat transport in nanosystems with defects, described by a tensorial internal variable." Communications in Applied and Industrial Mathematics 7, no. 2 (June 1, 2016): 81–97. http://dx.doi.org/10.1515/caim-2016-0007.
Повний текст джерелаRoy, A., S. Puri, and A. Acharya. "Phenomenological mesoscopic field dislocation mechanics, lower-order gradient plasticity, and transport of mean excess dislocation density." Modelling and Simulation in Materials Science and Engineering 15, no. 1 (December 7, 2006): S167—S180. http://dx.doi.org/10.1088/0965-0393/15/1/s14.
Повний текст джерелаLiu, Zihang, Xianfu Meng, Dandan Qin, Bo Cui, Haijun Wu, Yang Zhang, Stephen J. Pennycook, Wei Cai, and Jiehe Sui. "New insights into the role of dislocation engineering in N-type filled skutterudite CoSb3." Journal of Materials Chemistry C 7, no. 43 (2019): 13622–31. http://dx.doi.org/10.1039/c9tc03839f.
Повний текст джерелаBonilla, Daniel, Enrique Muñoz, and Rodrigo Soto-Garrido. "Thermo-Magneto-Electric Transport through a Torsion Dislocation in a Type I Weyl Semimetal." Nanomaterials 11, no. 11 (November 5, 2021): 2972. http://dx.doi.org/10.3390/nano11112972.
Повний текст джерелаKim, Jae‐Hwan, Young‐Hwan Lee, Jun‐Hyoung Park, Byeong‐Joo Lee, Young‐Woon Byeon, and Jae‐Chul Lee. "Ultrafast Na Transport into Crystalline Sn via Dislocation‐Pipe Diffusion." Small 18, no. 2 (November 21, 2021): 2104944. http://dx.doi.org/10.1002/smll.202104944.
Повний текст джерелаHernández, H., T. J. Massart, R. H. J. Peerlings, and M. G. D. Geers. "Towards an unconditionally stable numerical scheme for continuum dislocation transport." Modelling and Simulation in Materials Science and Engineering 23, no. 8 (October 26, 2015): 085013. http://dx.doi.org/10.1088/0965-0393/23/8/085013.
Повний текст джерелаRezaei Mianroodi, Jaber, Ron Peerlings, and Bob Svendsen. "Strongly non-local modelling of dislocation transport and pile-up." Philosophical Magazine 96, no. 12 (March 16, 2016): 1171–87. http://dx.doi.org/10.1080/14786435.2016.1157270.
Повний текст джерелаNitta, Shugo, Michihiko Kariya, Takayuki Kashima, Shigeo Yamaguchi, Hiroshi Amano, and Isamu Akasaki. "Mass transport and the reduction of threading dislocation in GaN." Applied Surface Science 159-160 (June 2000): 421–26. http://dx.doi.org/10.1016/s0169-4332(00)00089-1.
Повний текст джерелаSato, T., T. Suzuki, S. Tomiya, and S. Yamada. "Dislocation-limited electron transport in InSb grown on GaAs(001)." Physica B: Condensed Matter 376-377 (April 2006): 579–82. http://dx.doi.org/10.1016/j.physb.2005.12.146.
Повний текст джерелаMurphy, J. D., S. Senkader, R. J. Falster, and P. R. Wilshaw. "Oxygen transport in Czochralski silicon investigated by dislocation locking experiments." Materials Science and Engineering: B 134, no. 2-3 (October 2006): 176–84. http://dx.doi.org/10.1016/j.mseb.2006.06.045.
Повний текст джерелаXie, Ruiwen, Song Lu, Wei Li, Yanzhong Tian, and Levente Vitos. "Dissociated dislocation-mediated carbon transport and diffusion in austenitic iron." Acta Materialia 191 (June 2020): 43–50. http://dx.doi.org/10.1016/j.actamat.2020.03.042.
Повний текст джерелаHanisch-Blicharski, Anja, Boris Krenzer, Simone Wall, Annika Kalus, Tim Frigge, and Michael Horn-von Hoegen. "Heat transport through interfaces with and without misfit dislocation arrays." Journal of Materials Research 27, no. 21 (October 15, 2012): 2718–23. http://dx.doi.org/10.1557/jmr.2012.316.
Повний текст джерелаSolomon, Gemma C., Josh Vura-Weis, Carmen Herrmann, Michael R. Wasielewski та Mark A. Ratner. "Understanding Coherent Transport through π-Stacked Systems upon Spatial Dislocation†". Journal of Physical Chemistry B 114, № 45 (18 листопада 2010): 14735–44. http://dx.doi.org/10.1021/jp103110h.
Повний текст джерелаFeng, Qian, Peng Shi, Jie Zhao, Kai Du, Yu Kun Li, Qing Feng, and Yue Hao. "Transport Properties of Two-Dimensional Electron Gas in Cubic AlGaN/GaN Heterostructures." Advanced Materials Research 873 (December 2013): 777–82. http://dx.doi.org/10.4028/www.scientific.net/amr.873.777.
Повний текст джерелаCamus, G. M., D. J. Duquette, and N. S. Stoloff. "Effect of an oxide dispersion on the hydrogen embrittlement of a Ni3Al base alloy." Journal of Materials Research 5, no. 5 (May 1990): 950–54. http://dx.doi.org/10.1557/jmr.1990.0950.
Повний текст джерелаSong, Xueyan. "(110) facets and dislocation structure of low-angle grain boundaries in YBa2Cu3O7−δ and Y0.7Ca0.3Ba2Cu3O7−δ thin film bicrystals". Journal of Materials Research 22, № 4 (квітень 2007): 950–57. http://dx.doi.org/10.1557/jmr.2007.0110.
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